| Year |
Citation |
Score |
| 2022 |
Kim JH, Oberhausen W, Jung S, Xu J, Mei J, Kirch JD, Mawst LJ, Botez D, Belkin MA. Terahertz difference-frequency-generation quantum cascade lasers on silicon with wire grid current injectors. Optics Express. 30: 25410-25417. PMID 36237072 DOI: 10.1364/OE.454780 |
0.625 |
|
| 2021 |
Ryu JH, Kirch JD, Knipfer B, Liu Z, Turville-Heitz M, Earles T, Marsland RA, Strömberg A, Omanakuttan G, Sun YT, Lourdudoss S, Botez D, Mawst LJ. Beam stability of buried-heterostructure quantum cascade lasers employing HVPE regrowth. Optics Express. 29: 2819-2826. PMID 33726471 DOI: 10.1364/OE.414489 |
0.597 |
|
| 2020 |
Boyle C, Oresick KM, Kirch JD, Flores YV, Mawst LJ, Botez D. Erratum: “Carrier leakage via interface-roughness scattering bridges gap between theoretical and experimental internal efficiencies of quantum cascade lasers” [Appl. Phys. Lett. 117, 051101 (2020)] Applied Physics Letters. 117: 109901. DOI: 10.1063/5.0025953 |
0.587 |
|
| 2020 |
Boyle C, Oresick KM, Kirch JD, Flores YV, Mawst LJ, Botez D. Carrier leakage via interface-roughness scattering bridges gap between theoretical and experimental internal efficiencies of quantum cascade lasers Applied Physics Letters. 117: 51101. DOI: 10.1063/5.0007812 |
0.623 |
|
| 2020 |
Sun W, Kim H, Mawst LJ, Tansu N. Interplay of GaAsP barrier and strain compensation in InGaAs quantum well at near-critical thickness Journal of Crystal Growth. 531: 125381. DOI: 10.1016/J.Jcrysgro.2019.125381 |
0.574 |
|
| 2019 |
Kim H, Shi B, Lingley Z, Li Q, Rajeev A, Brodie M, Lau KM, Kuech TF, Sin Y, Mawst LJ. Electrically injected 1.64µm emitting InGaAs 3-QW laser diodes grown on mismatched substrates by MOVPE. Optics Express. 27: 33205-33216. PMID 31878394 DOI: 10.1364/Oe.27.033205 |
0.528 |
|
| 2019 |
Jaffe GR, Mei S, Boyle CA, Kirch JD, Savage DE, Botez D, Mawst LJ, Knezevic I, Lagally MG, Eriksson MA. Measurements of the Thermal Resistivity of InAlAs, InGaAs and InAlAs/InGaAs Superlattices. Acs Applied Materials & Interfaces. PMID 30807087 DOI: 10.1021/Acsami.8B17268 |
0.558 |
|
| 2019 |
Sigler C, Bedford R, Gibson R, Ryu JH, Boyle CA, Kirch JD, Lindberg D, Earles T, Botez D, Mawst LJ. 5.3 μm-Emitting Diffraction-Limited Leaky-Wave-Coupled Quantum Cascade Laser Phase-Locked Array Ieee Journal of Selected Topics in Quantum Electronics. 25: 1-9. DOI: 10.1109/Jstqe.2019.2950772 |
0.516 |
|
| 2019 |
Malik A, Spott A, Stanton EJ, Peters JD, Kirch JD, Mawst LJ, Botez D, Meyer JR, Bowers JE. Integration of Mid-Infrared Light Sources on Silicon-Based Waveguide Platforms in 3.5–4.7 μm Wavelength Range Ieee Journal of Selected Topics in Quantum Electronics. 25: 1-9. DOI: 10.1109/Jstqe.2019.2949453 |
0.486 |
|
| 2019 |
Elkin NN, Napartovich AP, Vysotsky DV, Sigler C, Boyle CA, Kirch JD, Earles T, Botez D, Mawst LJ, Belyanin A. Analysis of Mode Competition in Resonant Leaky-Wave Coupled Phase-Locked Arrays of Mid-IR Quantum Cascade Lasers Ieee Journal of Quantum Electronics. 55: 1-10. DOI: 10.1109/Jqe.2019.2906348 |
0.522 |
|
| 2019 |
Kim H, Wei W, Kuech TF, Gopalan P, Mawst LJ. Impact of InGaAs carrier collection quantum well on the performance of InAs QD active region lasers fabricated by diblock copolymer lithography and selective area epitaxy Semiconductor Science and Technology. 34: 025012. DOI: 10.1088/1361-6641/Aaf8E8 |
0.514 |
|
| 2019 |
Becher N, Farzaneh M, Knipfer B, Sigler C, Kirch J, Boyle C, Botez D, Mawst LJ, Lindberg DF, Earles T. Thermal imaging of buried heterostructure quantum cascade lasers (QCLs) and QCL arrays using CCD-based thermoreflectance microscopy Journal of Applied Physics. 125: 033102. DOI: 10.1063/1.5065507 |
0.426 |
|
| 2019 |
Kim H, Guan Y, Kuech TF, Mawst LJ. Impact of thermal annealing on internal device parameters of GaAs0.965Bi0.035/GaAs0.75P0.25 quantum well lasers Iet Optoelectronics. 13: 12-16. DOI: 10.1049/Iet-Opt.2018.5031 |
0.513 |
|
| 2018 |
Rajeev A, Chen W, Kirch J, Babcock S, Kuech T, Earles T, Mawst L. Interfacial Mixing Analysis for Strained Layer Superlattices by Atom Probe Tomography Crystals. 8: 437. DOI: 10.3390/CRYST8110437 |
0.352 |
|
| 2018 |
Hu J, Mawst L, Moss S, Petit L, Ting D. Feature issue introduction: mid-infrared optical materials and their device applications Optical Materials Express. 8: 2026. DOI: 10.1364/Ome.8.002026 |
0.304 |
|
| 2018 |
Botez D, Kirch JD, Boyle C, Oresick KM, Sigler C, Kim H, Knipfer BB, Ryu JH, Lindberg D, Earles T, Mawst LJ, Flores YV. High-efficiency, high-power mid-infrared quantum cascade lasers [Invited] Optical Materials Express. 8: 1378. DOI: 10.1364/Ome.8.001378 |
0.705 |
|
| 2018 |
Sigler C, Wang X, Mawst LJ, Zory PS. First-Order Grating TM Coupling Coefficients for Distributed Feedback Quantum Cascade Lasers Ieee Journal of Quantum Electronics. 54: 1-7. DOI: 10.1109/Jqe.2018.2850438 |
0.718 |
|
| 2018 |
Kim H, Kim K, Guan Y, Lee J, Kuech TF, Mawst LJ. Single junction solar cell employing strain compensated GaAs0.965Bi0.035/GaAs0.75P0.25 multiple quantum wells grown by metal organic vapor phase epitaxy Applied Physics Letters. 112: 251105. DOI: 10.1063/1.5035281 |
0.444 |
|
| 2018 |
Kim H, Guan Y, Babcock SE, Kuech TF, Mawst LJ. Characteristics of OMVPE grown GaAsBi QW lasers and impact of post-growth thermal annealing Journal of Applied Physics. 123: 113102. DOI: 10.1063/1.5017965 |
0.519 |
|
| 2018 |
Tian Y, Li J, Kirch JD, Sigler C, Mawst L, Pelucchi E, Peters FH, Hall DC. High‐Index‐Contrast λ = 1.55 μm AlInGaAs/InP Laser Heterostructure Waveguides Through Selective Core Oxidation Physica Status Solidi (a). 216: 1800495. DOI: 10.1002/Pssa.201800495 |
0.461 |
|
| 2017 |
Kim H, Guan Y, Forghani K, Kuech TF, Mawst LJ. Strain-compensated Ga(AsP)/Ga(AsBi)/Ga(AsP) quantum-well active-region lasers (Conference Presentation) Proceedings of Spie. 10123: 1012304. DOI: 10.1117/12.2251708 |
0.544 |
|
| 2017 |
Botez D, Kirch JD, Chang C, Boyle C, Kim H, Oresick KM, Sigler C, Mawst LJ, Jo M, Shin JC, Doo G, Lindberg DF, Earles TL. High internal differential efficiency mid-infrared quantum cascade lasers Proceedings of Spie. 10123. DOI: 10.1117/12.2249537 |
0.836 |
|
| 2017 |
Sigler C, Gibson R, Boyle C, Kirch JD, Lindberg D, Earles T, Botez D, Mawst LJ, Bedford R. Spectrally resolved modal characteristics of leaky-wave-coupled quantum cascade phase-locked laser arrays Optical Engineering. 57: 1. DOI: 10.1117/1.Oe.57.1.011013 |
0.697 |
|
| 2017 |
Hofling S, Cataluna MA, Iwamoto S, Mawst LJ, Reithmaier JP, Vurgaftman I. Introduction to the Special Issue on Semiconductor Lasers Ieee Journal of Selected Topics in Quantum Electronics. 23: 1-3. DOI: 10.1109/Jstqe.2017.2772058 |
0.477 |
|
| 2017 |
Sigler C, Boyle CA, Kirch JD, Lindberg D, Earles T, Botez D, Mawst LJ. 4.7 μm-Emitting Near-Resonant Leaky-Wave-Coupled Quantum Cascade Laser Phase-Locked Arrays Ieee Journal of Selected Topics in Quantum Electronics. 23: 1-6. DOI: 10.1109/Jstqe.2017.2704279 |
0.688 |
|
| 2017 |
Kim H, Guan Y, Forghani K, Kuech TF, Mawst LJ. Laser diodes employing GaAs1−xBix/GaAs1−yPyquantum well active regions Semiconductor Science and Technology. 32: 075007. DOI: 10.1088/1361-6641/Aa729B |
0.482 |
|
| 2017 |
Jung S, Kirch J, Kim JH, Mawst LJ, Botez D, Belkin MA. Quantum cascade lasers transfer-printed on silicon-on-sapphire Applied Physics Letters. 111: 211102. DOI: 10.1063/1.5002157 |
0.711 |
|
| 2017 |
Kirch JD, Kim H, Boyle C, Chang C, Mawst LJ, Lindberg D, Earles T, Botez D, Helm M, von Borany J, Akhmadaliev S, Böttger R, Reyner C. Proton implantation for electrical insulation of the InGaAs/InAlAs superlattice material used in 8–15 μm-emitting quantum cascade lasers Applied Physics Letters. 110: 082102. DOI: 10.1063/1.4977067 |
0.611 |
|
| 2017 |
Kim H, Choi J, Lingley Z, Brodie M, Sin Y, Kuech TF, Gopalan P, Mawst LJ. Selective growth of strained (In)GaAs quantum dots on GaAs substrates employing diblock copolymer lithography nanopatterning Journal of Crystal Growth. 465: 48-54. DOI: 10.1016/J.Jcrysgro.2017.02.046 |
0.49 |
|
| 2017 |
Guan Y, Forghani K, Kim H, Babcock SE, Mawst LJ, Kuech TF. Surface kinetics study of metal-organic vapor phase epitaxy of GaAs 1−y Bi y on offcut and mesa-patterned GaAs substrates Journal of Crystal Growth. 464: 39-48. DOI: 10.1016/J.Jcrysgro.2017.01.043 |
0.315 |
|
| 2016 |
Kirch JD, Chang CC, Boyle C, Mawst LJ, Lindberg D, Earles T, Botez D. 86% internal differential efficiency from 8 to 9 µm-emitting, step-taper active-region quantum cascade lasers. Optics Express. 24: 24483-24494. PMID 27828176 DOI: 10.1364/Oe.24.024483 |
0.84 |
|
| 2016 |
Jonasson O, Mei S, Karimi F, Kirch J, Botez D, Mawst L, Knezevic I. Quantum Transport Simulation of High-Power 4.6-μm Quantum Cascade Lasers Photonics. 3: 38. DOI: 10.3390/Photonics3020038 |
0.654 |
|
| 2016 |
Spott A, Peters J, Davenport M, Stanton E, Zhang C, Merritt C, Bewley W, Vurgaftman I, Kim C, Meyer J, Kirch J, Mawst L, Botez D, Bowers J. Heterogeneously Integrated Distributed Feedback Quantum Cascade Lasers on Silicon Photonics. 3: 35. DOI: 10.3390/Photonics3020035 |
0.701 |
|
| 2016 |
Kirch JD, Chang CC, Boyle C, Mawst LJ, Lindberg D, Earles T, Botez D. 86% internal differential efficiency from 8 to 9 μm-emitting, step-taper active-region quantum cascade lasers Optics Express. 24: 24483-24494. DOI: 10.1364/OE.24.024483 |
0.68 |
|
| 2016 |
Guan Y, Forghani K, Schulte KL, Babcock S, Mawst L, Kuech TF. Enhanced incorporation of p into tensile-strained GaAs1-yPy layers grown by metal-organic vapor phase epitaxy at very low temperatures Ecs Journal of Solid State Science and Technology. 5: P183-P189. DOI: 10.1149/2.0181603Jss |
0.311 |
|
| 2016 |
Spott A, Peters J, Davenport ML, Stanton EJ, Merritt CD, Bewley WW, Vurgaftman I, Kim CS, Meyer JR, Kirch J, Mawst LJ, Botez D, Bowers JE. Quantum cascade laser on silicon Optica. 3: 545-551. DOI: 10.1117/12.2248760 |
0.692 |
|
| 2016 |
Kirch JD, Chang CC, Boyle C, Mawst LJ, Lindberg D, Earles T, Botez D. Step-taper active-region quantum cascade lasers for carrier-leakage suppression and high internal differential efficiency Proceedings of Spie - the International Society For Optical Engineering. 9767. DOI: 10.1117/12.2209716 |
0.695 |
|
| 2016 |
Boyle C, Sigler C, Kirch JD, Lindberg D, Earles T, Botez D, Mawst LJ. Surface-emitting quantum cascade laser with 2nd-order metal-semiconductor gratings for single-lobe emission Proceedings of Spie - the International Society For Optical Engineering. 9767. DOI: 10.1117/12.2209105 |
0.693 |
|
| 2016 |
Sin Y, Peterson M, Lingley Z, Lalumondiere S, Moss SC, Kim H, Forghani K, Guan Y, Kim K, Lee J, Mawst LJ, Kuech TF, Tatavarti R. Carrier dynamics in QW and bulk bismide and epitaxial lift off GaAs-In(Al)GaP double heterostructures grown by MOVPE for multi-junction solar cells Proceedings of Spie - the International Society For Optical Engineering. 9743. DOI: 10.1117/12.2208804 |
0.393 |
|
| 2016 |
Kim T, Wood A, Kim H, Kim Y, Lee J, Peterson M, Sin Y, Moss S, Kuech TF, Babcock S, Mawst LJ. Impact of Sb Incorporation on MOVPE-Grown "Bulk" InGaAs(Sb)N Films for Solar Cell Application Ieee Journal of Photovoltaics. DOI: 10.1109/Jphotov.2016.2598262 |
0.306 |
|
| 2016 |
Boyle C, Sigler C, Kirch JD, Lindberg DF, Earles T, Botez D, Mawst LJ. High-power, surface-emitting quantum cascade laser operating in a symmetric grating mode Applied Physics Letters. 108. DOI: 10.1063/1.4944846 |
0.694 |
|
| 2016 |
Kim H, Forghani K, Guan Y, Kim K, Wood AW, Lee J, Babcock SE, Kuech TF, Mawst LJ. Impact of in-situ annealing on dilute-bismide materials and its application to photovoltaics Journal of Crystal Growth. DOI: 10.1016/J.Jcrysgro.2016.04.039 |
0.397 |
|
| 2016 |
Rajeev A, Mawst LJ, Kirch JD, Botez D, Miao J, Buelow P, Kuech TF, Li X, Sigler C, Babcock SE, Earles T. Regrowth of quantum cascade laser active regions on metamorphic buffer layers Journal of Crystal Growth. DOI: 10.1016/J.Jcrysgro.2016.01.029 |
0.62 |
|
| 2015 |
Sin Y, Lingley Z, Peterson M, Brodie M, Moss SC, Kim TW, Kim H, Guan Y, Forghani K, Mawst LJ, Kuech TF. Time-resolved PL and TEM studies of MOVPE-grown bulk dilute nitride and bismide quantum well heterostructure Proceedings of Spie - the International Society For Optical Engineering. 9358. DOI: 10.1117/12.2076785 |
0.395 |
|
| 2015 |
Sin Y, Lingley Z, Brodie M, Presser N, Moss SC, Kirch J, Chang CC, Boyle C, Mawst LJ, Botez D, Lindberg D, Earles T. Destructive physical analysis of degraded quantum cascade lasers Proceedings of Spie - the International Society For Optical Engineering. 9382. DOI: 10.1117/12.2076641 |
0.694 |
|
| 2015 |
Napartovich AP, Elkin NN, Vysotsky DV, Kirch J, Sigler C, Botez D, Mawst LJ, Belyanin A. Above-threshold numerical modeling of high-index-contrast photonic-crystal quantum cascade lasers Proceedings of Spie - the International Society For Optical Engineering. 9382. DOI: 10.1117/12.2076504 |
0.688 |
|
| 2015 |
Chang CC, Kirch JD, Boyle C, Sigler C, Mawst LJ, Botez D, Zutter B, Buelow P, Schulte K, Kuech T, Earles T. Planarized process for resonant leaky-wave coupled phase-locked arrays of mid-IR quantum cascade lasers Proceedings of Spie - the International Society For Optical Engineering. 9382. DOI: 10.1117/12.2075667 |
0.683 |
|
| 2015 |
Mawst LJ, Rajeev A, Kirch JD, Kim TW, Botez D, Zutter B, Buelow P, Schulte K, Kuech TF, Wood A, Babcock SE, Earles T. Quantum-cascade-laser active regions on metamorphic buffer layers Proceedings of Spie - the International Society For Optical Engineering. 9370. DOI: 10.1117/12.2075457 |
0.679 |
|
| 2015 |
Kim T, Mawst LJ, Kim Y, Kim K, Lee J, Kuech TF. 13.2% efficiency double-hetero structure single-junction InGaAsN solar cells grown by MOVPE Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 33. DOI: 10.1116/1.4906511 |
0.356 |
|
| 2015 |
Mawst LJ, Chrostowski L, Coleman AC, Höfling S, Nishiyama N, Shterengas L. Introduction to Issue on Semiconductor Lasers Ieee Journal On Selected Topics in Quantum Electronics. 21: 6-8. DOI: 10.1109/Jstqe.2015.2500205 |
0.471 |
|
| 2015 |
Sigler C, Chang CC, Kirch JD, Mawst LJ, Botez D, Earles T. Design of Resonant Leaky-Wave Coupled Phase-Locked Arrays of Mid-IR Quantum Cascade Lasers Ieee Journal On Selected Topics in Quantum Electronics. 21. DOI: 10.1109/Jstqe.2015.2438823 |
0.816 |
|
| 2015 |
Botez D, Garrod T, Mawst LJ. High CW wallplug efficiency 1.5 micron-emitting diode lasers 2015 Ieee Photonics Conference, Ipc 2015. 551-552. DOI: 10.1109/IPCon.2015.7323726 |
0.662 |
|
| 2015 |
Boyle C, Sigler C, Kirch JD, Lindberg D, Earles T, Botez D, Mawst LJ. Single-lobe surface-emitting quantum cascade laser with 2nd-order metal-semiconductor gratings 2015 Ieee Photonics Conference, Ipc 2015. 547-548. DOI: 10.1109/IPCon.2015.7323703 |
0.663 |
|
| 2015 |
Kim H, Forghani K, Guan Y, Luo G, Anand A, Morgan D, Kuech TF, Mawst LJ, Lingley ZR, Foran BJ, Sin Y. Strain-compensated GaAs1-yPy/GaAs1-zBiz/GaAs1-yPy quantum wells for laser applications Semiconductor Science and Technology. 30. DOI: 10.1088/0268-1242/30/9/094011 |
0.497 |
|
| 2015 |
Botez D, Chang CC, Mawst LJ. Temperature sensitivity of the electro-optical characteristics for mid-infrared (λ = 3-16 μm)-emitting quantum cascade lasers Journal of Physics D: Applied Physics. 49. DOI: 10.1088/0022-3727/49/4/043001 |
0.826 |
|
| 2015 |
Wheatley R, Kesaria M, Mawst LJ, Kirch JD, Kuech TF, Marshall A, Zhuang QD, Krier A. Extended wavelength mid-infrared photoluminescence from type-I InAsN and InGaAsN dilute nitride quantum wells grown on InP Applied Physics Letters. 106. DOI: 10.1063/1.4922590 |
0.439 |
|
| 2015 |
Kirch JD, Chang CC, Boyle C, Mawst LJ, Lindberg D, Earles T, Botez D. Highly temperature insensitive, low threshold-current density (λ = 8.7-8.8 μ m) quantum cascade lasers Applied Physics Letters. 106. DOI: 10.1063/1.4917499 |
0.707 |
|
| 2015 |
Kirch JD, Chang CC, Boyle C, Mawst LJ, Lindberg D, Earles T, Botez D. 5.5 W near-diffraction-limited power from resonant leaky-wave coupled phase-locked arrays of quantum cascade lasers Applied Physics Letters. 106. DOI: 10.1063/1.4908178 |
0.727 |
|
| 2015 |
Chang CC, Kirch JD, Buelow P, Boyle C, Kuech TF, Lindberg D, Earles T, Botez D, Mawst LJ. Buried-heterostructure mid-infrared quantum cascade lasers fabricated by nonselective regrowth and chemical polishing Electronics Letters. 51: 1098-1100. DOI: 10.1049/El.2015.1094 |
0.72 |
|
| 2014 |
Sin Y, LaLumondiere S, Wells N, Lingley Z, Presser N, Lotshaw W, Moss SC, Kim TW, Forghani K, Mawst LJ, Kuech TF, Tatavarti R, Wibowo A, Pan N. Carrier Dynamics in MOVPE-Grown Bulk InGaAsNSb Materials and Epitaxial Lift-Off GaAs Double Heterostructures for Multi-junction Solar Cells Mrs Proceedings. 1635: 55-62. DOI: 10.1557/Opl.2014.370 |
0.328 |
|
| 2014 |
Garrod T, Olson D, Klaus M, Zenner C, Galstad C, Brunet F, Mawst L, Botez D. High-power and high-efficiency broad-area diode laser emitting at 1.5 μm Proceedings of Spie. 9002. DOI: 10.1117/12.2040458 |
0.716 |
|
| 2014 |
Sin Y, Lingley Z, Lalumondiere S, Wells N, Lotshaw W, Moss SC, Kim TW, Mawst LJ, Kuech TF. Variable temperature carrier dynamics in bulk (In)GaAsNSb materials grown by MOVPE for multi-junction solar cells Proceedings of Spie - the International Society For Optical Engineering. 8981. DOI: 10.1117/12.2037385 |
0.344 |
|
| 2014 |
Sin Y, Presser N, Brodie M, Lingley Z, Moss SC, Kirch J, Chang CC, Boyle C, Mawst LJ, Botez D, Lindberg D, Earles T. Catastrophic degradation in quantum cascade lasers emitting at 8.4 μm Proceedings - 2014 Summer Topicals Meeting Series, Sum 2014. 75-76. DOI: 10.1109/SUM.2014.46 |
0.646 |
|
| 2014 |
Kim TW, Kim Y, Kim K, Lee JJ, Kuech T, Mawst LJ. 1.25-eV GaAsSbN/Ge double-junction solar cell grown by metalorganic vapor phase epitaxy for high efficiency multijunction solar cell application Ieee Journal of Photovoltaics. 4: 981-985. DOI: 10.1109/Jphotov.2014.2308728 |
0.356 |
|
| 2014 |
Chang CC, Kirch JD, Boyle C, Sigler C, Mawst LJ, Botez D, Zutter B, Schulte K, Kuech T, Lindberg D, Earles T. Resonant leaky-wave coupled phase-locked arrays of mid-infrared quantum cascade lasers Conference Digest - Ieee International Semiconductor Laser Conference. 36-37. DOI: 10.1109/ISLC.2014.151 |
0.627 |
|
| 2014 |
Garrod T, Olson D, Klaus M, Zenner C, Galstad C, Mawst L, Botez D. 50% continuous-wave wallplug efficiency from 1.53 μ m-emitting broad-area diode lasers Applied Physics Letters. 105. DOI: 10.1063/1.4893576 |
0.692 |
|
| 2014 |
Sigler C, Kirch JD, Earles T, Mawst LJ, Yu Z, Botez D. Design for high-power, single-lobe, grating-surface-emitting quantum cascade lasers enabled by plasmon-enhanced absorption of antisymmetric modes Applied Physics Letters. 104. DOI: 10.1063/1.4869561 |
0.708 |
|
| 2014 |
Kim TW, Kim K, Lee JJ, Kuech TF, Mawst LJ, Wells NP, Lalumondiere SD, Sin Y, Lotshaw WT, Moss SC. Impact of thermal annealing on bulk InGaAsSbN materials grown by metalorganic vapor phase epitaxy Applied Physics Letters. 104. DOI: 10.1063/1.4864111 |
0.346 |
|
| 2014 |
Mawst LJ, Kirch JD, Kim T, Garrod T, Boyle C, Botez D, Zutter B, Schulte K, Kuech TF, Bouzi PM, Gmachl CF, Earles T. Low-strain, quantum-cascade-laser active regions grown on metamorphic buffer layers for emission in the 3.0-4.0 μm wavelength region Iet Optoelectronics. 8: 25-32. DOI: 10.1049/Iet-Opt.2013.0060 |
0.685 |
|
| 2014 |
Kim Y, Kim K, Kim TW, Mawst LJ, Kuech TF, Kim CZ, Park WK, Lee J. InGaAsNSb/Ge double-junction solar cells grown by metalorganic chemical vapor deposition Solar Energy. 102: 126-130. DOI: 10.1016/J.Solener.2014.01.019 |
0.365 |
|
| 2014 |
Kim TW, Kuech TF, Mawst LJ. Impact of growth temperature and substrate orientation on dilute-nitride-antimonide materials grown by MOVPE for multi-junction solar cell application Journal of Crystal Growth. 405: 87-91. DOI: 10.1016/J.Jcrysgro.2014.07.056 |
0.306 |
|
| 2014 |
Forghani K, Guan Y, Wood AW, Anand A, Babcock SE, Mawst LJ, Kuech TF. Self-limiting growth when using trimethyl bismuth (TMBi) in the metal-organic vapor phase epitaxy (MOVPE) of GaAs1-yBiy Journal of Crystal Growth. 395: 38-45. DOI: 10.1016/J.Jcrysgro.2014.03.014 |
0.34 |
|
| 2014 |
Kim TW, Forghani K, Mawst LJ, Kuech TF, Lalumondiere SD, Sin Y, Lotshaw WT, Moss SC. Properties of 'bulk' GaAsSbN/GaAs for multi-junction solar cell application: Reduction of carbon background concentration Journal of Crystal Growth. 393: 70-74. DOI: 10.1016/J.Jcrysgro.2013.10.034 |
0.339 |
|
| 2014 |
Zutter BT, Schulte KL, Kim TW, Mawst LJ, Kuech TF, Foran B, Sin Y. Planarization and processing of metamorphic buffer layers grown by hydride vapor-phase epitaxy Journal of Electronic Materials. 43: 873-878. DOI: 10.1007/S11664-013-2839-X |
0.407 |
|
| 2014 |
Kirch JD, Chang CC, Boyle C, Mawst LJ, Lindberg D, Earles T, Botez D. 3 W near-diffraction-limited power from high-index- contrast photonic-crystal quantum cascade lasers Conference On Lasers and Electro-Optics Europe - Technical Digest. 2014. |
0.457 |
|
| 2014 |
Kirch JD, Chang CC, Boyle C, Mawst LJ, Lindberg D, Earles T, Botez D. 3 W near-diffraction-limited power from high-index-contrast photonic-crystal quantum cascade lasers Optics Infobase Conference Papers. |
0.671 |
|
| 2013 |
Huang Y, Kim TW, Xiong S, Mawst LJ, Kuech TF, Nealey PF, Dai Y, Wang Z, Guo W, Forbes D, Hubbard SM, Nesnidal M. InAs nanowires grown by metal-organic vapor-phase epitaxy (MOVPE) employing PS/PMMA diblock copolymer nanopatterning. Nano Letters. 13: 5979-84. PMID 24274630 DOI: 10.1021/Nl403163X |
0.348 |
|
| 2013 |
Kuech TF, Mawst LJ, Brown AS. Mixed semiconductor alloys for optical devices. Annual Review of Chemical and Biomolecular Engineering. 4: 187-209. PMID 23540290 DOI: 10.1146/Annurev-Chembioeng-061312-103359 |
0.313 |
|
| 2013 |
Garrod T, Brunet F, Galstad C, Klaus M, Olson D, Zenner C, Xiao Y, Mawst L, Botez D. High-power and high-efficiency distributed feedback (DFB) lasers operating in the 1.4-1.6 μm range for eye-safe applications Proceedings of Spie. 8605. DOI: 10.1117/12.2004060 |
0.688 |
|
| 2013 |
Sin Y, LaLumondiere S, Lotshaw W, Moss SC, Kim TW, Forghani K, Mawst LJ, Kuech TF, Tatavarti R, Wibowo A, Pan N. Carrier dynamics in bulk 1eV InGaAsNSb materials and epitaxial lift off GaAs-InAlGaP layers grown by MOVPE for multi-junction solar cells Proceedings of Spie - the International Society For Optical Engineering. 8620. DOI: 10.1117/12.2001528 |
0.365 |
|
| 2013 |
Botez D, Shin JC, Kirch JD, Chang C, Mawst LJ, Earles T. Correction to "Multidimensional conduction-band engineering for maximizing the continuous-wave (CW) wallplug efficiencies of mid-infrared quantum cascade lasers'' [Jul/Aug 13 article no. 1200312] Ieee Journal of Selected Topics in Quantum Electronics. 19: 9700101-9700101. DOI: 10.1109/Jstqe.2013.2273511 |
0.791 |
|
| 2013 |
Botez D, Shin JC, Kirch JD, Chang CC, Mawst LJ, Earles T. Multidimensional conduction-band engineering for maximizing the continuous-wave (CW) wallplug efficiencies of mid-infrared quantum cascade lasers Ieee Journal On Selected Topics in Quantum Electronics. 19. DOI: 10.1109/Jstqe.2012.2237387 |
0.838 |
|
| 2013 |
Napartovich AP, Elkin NN, Vysotsky DV, Mao S, Kirch J, Wang X, Mawst LJ. Two-dimensional antiguided vertical cavity surface emitting laser arrays with reflecting boundary Ieee Journal On Selected Topics in Quantum Electronics. 19. DOI: 10.1109/JSTQE.2012.2231057 |
0.387 |
|
| 2013 |
Forghani K, Anand A, Mawst LJ, Kuech TF. Low temperature growth of GaAs1-yBiy epitaxial layers Journal of Crystal Growth. 380: 23-27. DOI: 10.1016/J.Jcrysgro.2013.05.033 |
0.314 |
|
| 2013 |
Schulte KL, Garrodb TJ, Kim TW, Kirch J, Ruder S, Mawst LJ, Kuech TF. Metalorganic vapor phase growth of quantum well structures on thick metamorphic buffer layers grown by hydride vapor phase epitaxy Journal of Crystal Growth. 370: 293-298. DOI: 10.1016/J.Jcrysgro.2012.08.053 |
0.359 |
|
| 2013 |
Mawst LJ, Kirch JD, Chang CC, Kim T, Garrod T, Botez D, Ruder S, Kuech TF, Earles T, Tatavarti R, Pan N, Wibowo A. InGaAs/AlInAs strain-compensated Superlattices grown on metamorphic buffer layers for low-strain, 3.6 μm-emitting quantum-cascade-laser active regions Journal of Crystal Growth. 370: 230-235. DOI: 10.1016/J.Jcrysgro.2012.06.053 |
0.669 |
|
| 2013 |
Kim TW, Garrod TJ, Mawst LJ, Kuech TF, LaLumondiere SD, Sin Y, Lotshaw WT, Moss SC. Characteristics of bulk InGaAsSbN/GaAs grown by metalorganic vapor phase epitaxy (MOVPE) Journal of Crystal Growth. 370: 163-167. DOI: 10.1016/J.Jcrysgro.2012.06.043 |
0.338 |
|
| 2012 |
Botez D, Shin JC, Kirch JD, Chang CC, Mawst LJ, Earles T. Tapered active-region, mid-infrared quantum cascade lasers for complete suppression of carrier-leakage currents Proceedings of Spie - the International Society For Optical Engineering. 8277. DOI: 10.1117/12.907439 |
0.831 |
|
| 2012 |
Napartovich AP, Elkin NN, Vysotsky DV, Botez D, Mawst LJ. Numerical studies of thermal lensing effects on high-CW-power single-spatial-mode diode lasers Proceedings of Spie - the International Society For Optical Engineering. 8277. DOI: 10.1117/12.907212 |
0.656 |
|
| 2012 |
Kim TW, Garrod TJ, Kim K, Lee J, Mawst LJ, Kuech TF, LaLumondiere SD, Sin Y, Lotshaw WT, Moss SC. Characteristics of bulk InGaAsN and InGaAsSbN materials grown by metal organic vapor phase epitaxy (MOVPE) for solar cell application Proceedings of Spie - the International Society For Optical Engineering. 8256. DOI: 10.1117/12.906961 |
0.338 |
|
| 2012 |
Sin Y, LaLumondiere SD, Foran BJ, Lotshaw WT, Moss SC, Kim TW, Dudley P, Kirch J, Ruder S, Mawst LJ, Kuech TF. Carrier dynamics and defects in MOVPE-grown bulk InGaAs layers with metamorphic InGaAs and InGaPSb buffer layers for solar cells Proceedings of Spie - the International Society For Optical Engineering. 8255. DOI: 10.1117/12.906424 |
0.367 |
|
| 2012 |
Palit S, Royal M, Jokerst N, Kirch J, Mawst L. Integration of a thin film III-V edge emitting laser and a polymer microring resonator on an SiO2/Si substrate Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 30. DOI: 10.1116/1.3676031 |
0.492 |
|
| 2012 |
Mawst LJ, Botez D. Mode control and monolithic coherent-power scaling 2012 Ieee Photonics Society Summer Topical Meeting Series, Psst 2012. 45-46. DOI: 10.1109/PHOSST.2012.6280778 |
0.594 |
|
| 2012 |
Jagadish C, Dapkus PD, Mawst LJ, Helmy AS. Special Issue: Optoelectronic Device Integration Ieee Journal of Quantum Electronics. 48: 83-85. DOI: 10.1109/Jqe.2011.2180831 |
0.544 |
|
| 2012 |
Xu L, Patel D, Menoni CS, Pikal JM, Yeh JY, Huang JYT, Mawst LJ, Tansu N. Carrier recombination dynamics investigations of strain-compensated InGaAsN quantum wells Ieee Photonics Journal. 4: 2382-2389. DOI: 10.1109/Jphot.2012.2233465 |
0.665 |
|
| 2012 |
Xu L, Patel D, Menoni CS, Yeh JY, Mawst LJ, Tansu N. Experimental evidence of the impact of nitrogen on carrier capture and escape times in InGaAsN/GaAs Single quantum well Ieee Photonics Journal. 4: 2262-2271. DOI: 10.1109/Jphot.2012.2230251 |
0.703 |
|
| 2012 |
Botez D, Kirch JD, Shin JC, Chang CC, Garrod T, Mawst LJ, Earles T. Two-dimensional conduction-band engineering for performance optimization of quantum cascade lasers Conference Digest - Ieee International Semiconductor Laser Conference. 30-31. DOI: 10.1109/ISLC.2012.6348312 |
0.668 |
|
| 2012 |
Mawst LJ, Botez D, Kuech TF. Metamorphic buffer layers for mid-infrared emitting semiconductor lasers Conference On Optoelectronic and Microelectronic Materials and Devices, Proceedings, Commad. 99-100. DOI: 10.1109/COMMAD.2012.6472379 |
0.583 |
|
| 2012 |
Kim TW, Garrod TJ, Kim K, Lee JJ, Lalumondiere SD, Sin Y, Lotshaw WT, Moss SC, Kuech TF, Tatavarti R, Mawst LJ. Narrow band gap (1 eV) InGaAsSbN solar cells grown by metalorganic vapor phase epitaxy Applied Physics Letters. 100. DOI: 10.1063/1.3693160 |
0.381 |
|
| 2012 |
Kirch J, Shin J, Chang C, Mawst L, Botez D, Earles T. Erratum for ‘Tapered active-region quantum cascade lasers (=4.8 [micro sign]m) for virtual suppression of carrier-leakage currents’ Electronics Letters. 48: 665. DOI: 10.1049/El.2012.1453 |
0.671 |
|
| 2012 |
Kirch JD, Shin JC, Chang CC, Mawst LJ, Botez D, Earles T. Tapered active-region quantum cascade lasers (λ=4.8 μm) for virtual suppression of carrier-leakage currents Electronics Letters. 48: 234-235. DOI: 10.1049/El.2012.0017 |
0.684 |
|
| 2012 |
Shin JC, Mawst LJ, Botez D. Crystal growth via metal-organic vapor phase epitaxy of quantum-cascade-laser structures composed of multiple alloy compositions Journal of Crystal Growth. 357: 15-19. DOI: 10.1016/J.Jcrysgro.2012.07.013 |
0.636 |
|
| 2012 |
Kirch JD, Chang CC, Shin JC, Mawst LJ, Botez D, Earles T. Tapered active-region quantum cascade lasers for virtual suppression of carrier-leakage currents 2012 Conference On Lasers and Electro-Optics, Cleo 2012. |
0.414 |
|
| 2012 |
Garrod T, Kirch J, Kim T, Mawst LJ, Botez D, Ruder S, Kuech TF, Earles T. Deep-well quantum cascade laser structure on metamorphic buffer layer 2012 Conference On Lasers and Electro-Optics, Cleo 2012. |
0.652 |
|
| 2011 |
Napartovich AP, Elkin NN, Vysotsky DV, Mawst LJ, Botez D. Simple design of an edge-emitting diode laser for preventing spatial multimoding via thermal lensing. Optics Letters. 36: 4344-6. PMID 22089558 DOI: 10.1364/Ol.36.004344 |
0.708 |
|
| 2011 |
Liu G, Zhao H, Zhang J, Park JH, Mawst LJ, Tansu N. Selective area epitaxy of ultra-high density InGaN quantum dots by diblock copolymer lithography. Nanoscale Research Letters. 6: 342. PMID 21711862 DOI: 10.1186/1556-276X-6-342 |
0.766 |
|
| 2011 |
Napartovich AP, Elkin NN, Vysotsky DV, Mawst LJ, Botez D. Simple design of an edge-emitting diode laser for preventing spatial multimoding via thermal lensing Optics Letters. 36: 4344-4346. DOI: 10.1364/OL.36.004344 |
0.591 |
|
| 2011 |
Mawst LJ, Parka JH, Huang Y, Kirch J, Sinc Y, Foranc B, Liu CC, Nealey PF, Kuech TF. Nanopatterned quantum dot active region lasers on InP substrates Proceedings of Spie - the International Society For Optical Engineering. 7953. DOI: 10.1117/12.875199 |
0.506 |
|
| 2011 |
Botez D, Shin JC, Kumar S, Kirch J, Chang CC, Mawst LJ, Vurgaftman I, Meyer JR, Bismuto A, Hinkov B, Faist J. The temperature dependence of key electro-optical characteristics for mid-infrared emitting quantum cascade lasers Proceedings of Spie - the International Society For Optical Engineering. 7953. DOI: 10.1117/12.874197 |
0.821 |
|
| 2011 |
Sin Y, LaLumondiere S, Garrod T, Kim TW, Kirch J, Mawst L, Lotshaw WT, Moss SC. Carrier dynamics in MOVPE-grown bulk dilute nitride materials for multi-junction solar cells Proceedings of Spie. 7933. DOI: 10.1117/12.873894 |
0.355 |
|
| 2011 |
Liu G, Zhao H, Zhang J, Park JH, Mawst LJ, Tansu N. Selective area epitaxy of ultra-high density InGaN based quantum dots 2011 Ieee Winter Topicals, Wtm 2011. 35-36. DOI: 10.1109/PHOTWTM.2011.5730033 |
0.66 |
|
| 2011 |
Xu L, Patel D, Menoni CS, Yeh JY, Mawst LJ, Tansu N. Investigation of the carrier escape and capture processes in InGaAsN quantum well lasers Ieee Photonic Society 24th Annual Meeting, Pho 2011. 682-683. DOI: 10.1109/Pho.2011.6110733 |
0.745 |
|
| 2011 |
Napartovich AP, Elkin NN, Troshchieva VN, Vysotsky DV, Mawst LJ, Botez D. Comprehensive analysis of mode competition in high-power CW-operating diode lasers of the antiresonant reflecting optical waveguide (ARROW) type Ieee Journal On Selected Topics in Quantum Electronics. 17: 1735-1744. DOI: 10.1109/Jstqe.2011.2113392 |
0.676 |
|
| 2011 |
Ferguson JW, Blood P, Smowton PM, Bae H, Sarmiento T, Harris JS, Tansu N, Mawst LJ. Optical gain in GaInNAs and GaInNAsSb quantum wells Optics Infobase Conference Papers. DOI: 10.1109/JQE.2011.2129492 |
0.539 |
|
| 2011 |
Seibert CS, D'Souza M, Shin JC, Mawst LJ, Botez D, Hall DC. Fabrication of midinfrared quantum cascade laser via oxygen-enhanced nonselective wet thermal oxidation Journal of Applied Physics. 109. DOI: 10.1063/1.3544489 |
0.644 |
|
| 2011 |
Kirch J, Kim TW, Konen J, Mawst LJ, Kuech TF, Kuan TS. Effects of antimony (Sb) incorporation on MOVPE grown InAs yP1-y metamorphic buffer layers on InP substrates Journal of Crystal Growth. 315: 96-101. DOI: 10.1016/J.Jcrysgro.2010.09.054 |
0.312 |
|
| 2011 |
Garrod TJ, Kirch J, Dudley P, Kim S, Mawst LJ, Kuech TF. Narrow band gap GaInNAsSb material grown by metal organic vapor phase epitaxy (MOVPE) for solar cell applications Journal of Crystal Growth. 315: 68-73. DOI: 10.1016/J.Jcrysgro.2010.08.010 |
0.306 |
|
| 2010 |
Palit S, Kirch J, Huang M, Mawst L, Jokerst NM. Facet-embedded thin-film III-V edge-emitting lasers integrated with SU-8 waveguides on silicon. Optics Letters. 35: 3474-6. PMID 20967104 DOI: 10.1364/Ol.35.003474 |
0.547 |
|
| 2010 |
Jha S, Liu CC, Park JH, Wiedmann MK, Kuan TS, Babcock SE, Mawst LJ, Nealey PF, Kuech TF. Block copolymer templating for formation of quantum dots and lattice-mismatched semiconductor structures Materials Research Society Symposium Proceedings. 1258: 187-192. DOI: 10.1557/Proc-1258-Q13-05 |
0.379 |
|
| 2010 |
Botez D, Shin JC, Mawst LJ, Vurgaftman I, Meyer JR, Kumar S. Suppression of carrier leakage in 4.8 μm - Emitting quantum cascade lasers Proceedings of Spie - the International Society For Optical Engineering. 7616. DOI: 10.1117/12.842593 |
0.442 |
|
| 2010 |
Botez D, Shin JC, Kumar S, Mawst LJ, Vurgaftman I, Meyer JR. Electron leakage and its suppression via deep-well structures in 4.5- to 5.0-μm-emitting quantum cascade lasers Optical Engineering. 49. DOI: 10.1117/1.3509368 |
0.659 |
|
| 2010 |
Mawst LJ, Kuech TF. Patterned InGaAs/InGaAsP/InP quantum dot active lasers using diblock copolymer lithography and selective area MOCVD growth Photonics. 359-360. DOI: 10.1109/Photonics.2010.5698908 |
0.492 |
|
| 2010 |
Mawst LJ. Interband Mid-IR Semiconductor Lasers Ieee Photonics Journal. 2: 213-216. DOI: 10.1109/Jphot.2010.2043727 |
0.572 |
|
| 2010 |
Kuech TF, Mawst LJ. Nanofabrication of III-V semiconductors employing diblock copolymer lithography Journal of Physics D: Applied Physics. 43. DOI: 10.1088/0022-3727/43/18/183001 |
0.42 |
|
| 2010 |
Botez D, Kumar S, Shin JC, Mawst LJ, Vurgaftman I, Meyer JR. Erratum: “Temperature dependence of the key electro-optical characteristics for midinfrared emitting quantum cascade lasers” [Appl. Phys. Lett. 97, 071101 (2010)] Applied Physics Letters. 97: 199901. DOI: 10.1063/1.3512956 |
0.602 |
|
| 2010 |
Botez D, Kumar S, Shin JC, Mawst LJ, Vurgaftman I, Meyer JR. Temperature dependence of the key electro-optical characteristics for midinfrared emitting quantum cascade lasers Applied Physics Letters. 97. DOI: 10.1063/1.3478836 |
0.691 |
|
| 2010 |
Kirch J, Garrod T, Kim S, Park JH, Shin JC, Mawst LJ, Kuech TF, Song X, Babcock SE, Vurgaftman I, Meyer JR, Kuan TS. InAs yP 1-y metamorphic buffer layers on InP substrates for mid-IR diode lasers Journal of Crystal Growth. 312: 1165-1169. DOI: 10.1016/J.Jcrysgro.2009.12.057 |
0.522 |
|
| 2010 |
Kim S, Kirch J, Mawst L. Highly strained InAs quantum wells on InP substrates for mid-IR emission Journal of Crystal Growth. 312: 1388-1390. DOI: 10.1016/J.Jcrysgro.2009.12.003 |
0.453 |
|
| 2010 |
Shin JC, D'Souza M, Kirch J, Park JH, Mawst LJ, Botez D. Characteristics of mid-IR-emitting deep-well quantum cascade lasers grown by MOCVD Journal of Crystal Growth. 312: 1379-1382. DOI: 10.1016/J.Jcrysgro.2009.09.034 |
0.695 |
|
| 2010 |
Botez D, Tsvid G, D'Souza M, Shin JC, Liu Z, Park JH, Kirch J, Mawst LJ, Rathi M, Kuech TF, Vurgaftman I, Meyer J, Plant J, Turner G, Zory P. Intersubband Quantum-Box Lasers: Progress and Potential as Uncooled Mid-Infrared Sources Future Trends in Microelectronics: From Nanophotonics to Sensors and Energy. 49-64. DOI: 10.1002/9780470649343.ch4 |
0.413 |
|
| 2010 |
Liu G, Zhao H, Park JH, Mawst LJ, Tansu N. Growths of ultra high density ingan-based quantum dots on self-assembled diblock copolymer nanopatterns Optics Infobase Conference Papers. |
0.647 |
|
| 2010 |
Palit S, Kirch J, Mawst L, Jokersta NM. Thin-film lasers embedded in passively aligned SU-8 waveguides on SiO2/Si Optics Infobase Conference Papers. |
0.336 |
|
| 2009 |
Palit S, Kirch J, Tsvid G, Mawst L, Kuech T, Jokerst NM. Low-threshold thin-film III-V lasers bonded to silicon with front and back side defined features. Optics Letters. 34: 2802-4. PMID 19756110 DOI: 10.1364/Ol.34.002802 |
0.815 |
|
| 2009 |
Mawst LJ, Park JH, Rathi MK, Kuech TF, Verma VB, Coleman JJ. Selective MOCVD growth of InGaAs/GaAs and InGaAs/InP quantum dots employing diblock copolymer nanopatterning Proceedings of Spie - the International Society For Optical Engineering. 7224. DOI: 10.1117/12.810882 |
0.728 |
|
| 2009 |
Shin JC, D'Souza M, Xu D, Kirch J, Mawst LJ, Botez D, Vurgaftman I, Meyer JR. Characteristics of deep-well 4.8 μm-emitting quantum-cascade lasers grown by MOCVD Proceedings of Spie - the International Society For Optical Engineering. 7230. DOI: 10.1117/12.808268 |
0.702 |
|
| 2009 |
Botez D, Tsvid G, D'Souza M, Rathi MK, Shin JC, Kirch J, Mawst LJ, Kuech TF, Vurgaftman I, Meyer J, Plant J, Turner G. Progress towards intersubband quantum-box lasers for highly efficient continuous wave operation in the mid-infrared Journal of Nanophotonics. 3. DOI: 10.1117/1.3085992 |
0.862 |
|
| 2009 |
Park JH, Liu CC, Rathi MK, Mawst LJ, Nealey PF, Kuech TF. Nanoscale selective growth and optical characteristics of quantum dots on III-V substrates prepared by diblock copolymer nanopatterning Journal of Nanophotonics. 3. DOI: 10.1117/1.3085990 |
0.401 |
|
| 2009 |
Huang JYT, Mawst LJ, Kuech TF, Song X, Babcock SE, Kim CS, Vurgaftman I, Meyer JR, Holmes AL. Design and characterization of strained InGaAs/GaAsSb type-II 'W' quantum wells on InP substrates for mid-IR emission Journal of Physics D: Applied Physics. 42. DOI: 10.1088/0022-3727/42/2/025108 |
0.416 |
|
| 2009 |
Rathi MK, Khandekar AA, Song X, Babcock SE, Mawst LJ, Kuech TF. High antimony content GaAs1-z Nz - GaAs1-y Sby type-II "w" structure for long wavelength emission Journal of Applied Physics. 106. DOI: 10.1063/1.3226000 |
0.363 |
|
| 2009 |
Park JH, Kirch J, Mawst LJ, Liu CC, Nealey PF, Kuech TF. Controlled growth of InGaAs/InGaAsP quantum dots on InP substrates employing diblock copolymer lithography Applied Physics Letters. 95. DOI: 10.1063/1.3224916 |
0.415 |
|
| 2009 |
Jha S, Liu CC, Kuan TS, Babcock SE, Nealey PF, Park JH, Mawst LJ, Kuech TF. Defect reduction in epitaxial GaSb grown on nanopatterned GaAs substrates using full wafer block copolymer lithography Applied Physics Letters. 95. DOI: 10.1063/1.3204013 |
0.36 |
|
| 2009 |
Shin JC, D'Souza M, Liu Z, Kirch J, Mawst LJ, Botez D, Vurgaftman I, Meyer JR. Highly temperature insensitive, deep-well 4.8 μm emitting quantum cascade semiconductor lasers Applied Physics Letters. 94. DOI: 10.1063/1.3139069 |
0.698 |
|
| 2009 |
Shin JC, Mawst LJ, Botez D, Vurgaftman I, Meyer JR. Ultra-low temperature sensitive deep-well quantum cascade lasers (λ=4.8m) via uptapering conduction band edge of injector regions Electronics Letters. 45: 741-743. DOI: 10.1049/El.2009.1393 |
0.689 |
|
| 2009 |
Shin JC, D'Souza M, Kirch J, Mawst LJ, Botez D, Vurgaftman I, Meyer JR. Low temperature sensitive, deep-well 4.8 μm emitting quantum cascade semiconductor lasers Optics Infobase Conference Papers. |
0.444 |
|
| 2009 |
Kirch J, Garrod T, Kim S, Park JH, Shin JC, Mawst LJ, Kuech TF, Song X, Babcock SE, Vurgaftman I, Meyer JR. InAsyP1-y metamorphic buffer layers (MBLs) on InP substrates for Mid-IR diode lasers Optics Infobase Conference Papers. |
0.385 |
|
| 2009 |
Kirch J, Garrod T, Kim S, Park JH, Shin JC, Mawst LJ, Kuech TF, Song X, Babcock SE, Vurgaftman I, Meyer JR. InAsyP1-y Metamorphic Buffer Layers (MBLs) on InP substrates for Mid-IR diode lasers 2009 Conference On Lasers and Electro-Optics and 2009 Conference On Quantum Electronics and Laser Science Conference, Cleo/Qels 2009. |
0.391 |
|
| 2008 |
Mawst LJ, Huang JYT, Xu DP, Yeh JY, Tsvid G, Kuech TF, Tansu N. MOCVD-grown dilute nitride type II quantum wells Ieee Journal On Selected Topics in Quantum Electronics. 14: 979-991. DOI: 10.1109/Jstqe.2008.918105 |
0.823 |
|
| 2008 |
Tsvid G, Kirch J, Mawst LJ, Kanskar M, Cai J, Arif RA, Tansu N, Smowton PM, Blood P. Spontaneous radiative efficiency and gain characteristics of strained-layer InGaAs-GaAs quantum-well lasers Ieee Journal of Quantum Electronics. 44: 732-739. DOI: 10.1109/Jqe.2008.924242 |
0.846 |
|
| 2008 |
D'Souza M, Shin JC, Xu D, Kirch J, Mawst LJ, Botez D, Vurgaftman I, Meyer JR. Deep-well 4.8μm -emitting quantum-cascade lasers grown by MOCVD Conference Digest - Ieee International Semiconductor Laser Conference. 45-46. DOI: 10.1109/ISLC.2008.4636001 |
0.444 |
|
| 2008 |
Hsu CC, Lin JH, Chen YS, Lin YH, Kuo HC, Wang SC, Hsieh WF, Tansu N, Mawst LJ. Ultrafast carrier dynamics of InGaAsN and InGaAs single quantum wells Journal of Physics D: Applied Physics. 41. DOI: 10.1088/0022-3727/41/8/085107 |
0.621 |
|
| 2008 |
Vysotsky DV, Elkin NN, Napartovich AP, Troshchieva VN, Botez D, Mawst LJ. Numerical study of the influence of thermooptic effects on the competition of modes in diode lasers Quantum Electronics. 38: 215-221. DOI: 10.1070/Qe2008V038N03Abeh013725 |
0.696 |
|
| 2008 |
Liang D, Hall DC, Huang JYT, Tsvid G, Mawst LJ. Native-oxide-confined high-index-contrast λ=1.15 μm strain-compensated InGaAs single quantum well ridge waveguide lasers Applied Physics Letters. 93. DOI: 10.1063/1.3001587 |
0.819 |
|
| 2008 |
Kuech TF, Khandekar AA, Rathi M, Mawst LJ, Huang JYT, Song X, Babcock SE, Meyer JR, Vurgaftman I. MOVPE growth of antimonide-containing alloy materials for long wavelength applications Journal of Crystal Growth. 310: 4826-4830. DOI: 10.1016/J.Jcrysgro.2008.09.006 |
0.39 |
|
| 2008 |
Huang JYT, Mawst LJ, Jha S, Kuech TF, Wang D, Shterengas L, Belenky G, Meyer JR, Vurgaftman I. MOVPE growth of Ga(As)SbN on GaSb substrates Journal of Crystal Growth. 310: 4839-4842. DOI: 10.1016/J.Jcrysgro.2008.08.026 |
0.356 |
|
| 2008 |
Xu DP, D'Souza M, Shin JC, Mawst LJ, Botez D. InGaAs/GaAsP/AlGaAs, deep-well, quantum-cascade light-emitting structures grown by metalorganic chemical vapor deposition Journal of Crystal Growth. 310: 2370-2376. DOI: 10.1016/J.Jcrysgro.2007.11.218 |
0.621 |
|
| 2008 |
Huang JYT, Xu DP, Song X, Babcock SE, Kuech TF, Mawst LJ. Growth of strained GaAs1-ySby and GaAs1-y-zSbyNz quantum wells on InP substrates Journal of Crystal Growth. 310: 2382-2389. DOI: 10.1016/J.Jcrysgro.2007.11.207 |
0.362 |
|
| 2008 |
Song X, Babcock SE, Paulson CA, Kuech TF, Huang JYT, Xu DP, Park J, Mawst LJ. Nanostructure of GaAs0.88Sb0.10N0.02/InP quantum wells grown by metalorganic chemical vapor deposition on InP Journal of Crystal Growth. 310: 2377-2381. DOI: 10.1016/J.Jcrysgro.2007.11.018 |
0.412 |
|
| 2007 |
Park JH, Khandekar A, Park S, Mawst L, Kuech T, Nealey P. Selective GaAs Quantum Dot Array Growth using Dielectric and AlGaAs Masks Pattern-Transferred from Diblock Copolymer Mrs Proceedings. 1014. DOI: 10.1557/Proc-1014-Aa07-15 |
0.434 |
|
| 2007 |
Xu D, Huang JY, Park JH, Mawst LJ, Kuech TF, SONG X, Babcock SE. Characteristics of Strained GaAsSb(N)/InP Quantum Wells Grown by Metalorganic Chemical Vapor Deposition on InP Substrates Mrs Proceedings. 994. DOI: 10.1557/Proc-0994-F11-01 |
0.647 |
|
| 2007 |
Bao L, Kim NH, Mawst LJ, Elkin NN, Troshchieva VN, Vysotsky DV, Napartovich AP. Single-mode emission from vertical-cavity surface-emitting lasers with low-index defects Ieee Photonics Technology Letters. 19: 239-241. DOI: 10.1109/Lpt.2006.890058 |
0.835 |
|
| 2007 |
Tsvid G, Kirch J, Mawst LJ, Kanskar M, Cai J, Arif RA, Tansu N, Smowton PM, Blood P. Radiative efficiency of InGaAs/InGaAsP/GaAs quantum well lasers Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 313-314. DOI: 10.1109/LEOS.2007.4382403 |
0.845 |
|
| 2007 |
Xu L, Patel D, Menoni CS, Yeh JY, Huang JYT, Mawst LJ, Tansu N. Exciton binding energy and electron effective-mass in strain compensated InGaAsN/GaAs single Quantum Well Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 58-59. DOI: 10.1109/LEOS.2006.278835 |
0.521 |
|
| 2007 |
Liang D, Wang J, Huang JYT, Yeh JY, Mawst LJ, Hall DC. Deep-etched native-oxide-confined high-index-contrast AlGaAs heterostructure lasers with 1.3 μm dilute-nitride quantum wells Ieee Journal On Selected Topics in Quantum Electronics. 13: 1324-1331. DOI: 10.1109/Jstqe.2007.905097 |
0.542 |
|
| 2007 |
Huang JYT, Xu DP, Mawst LJ, Kuech TF, Vurgaftman I, Meyer JR. GaAsSbN-GaAsSb-InP type-II "W" quantum wells for mid-IR emission Ieee Journal On Selected Topics in Quantum Electronics. 13: 1065-1073. DOI: 10.1109/Jstqe.2007.902831 |
0.377 |
|
| 2007 |
Huang JYT, Xu DP, Park JH, Mawst LJ, Kuech TF, Song X, Babcock SE, Vurgaftman I, Meyer JR. Characteristics of strained GaAs1-ySby (0.16 ≤ y ≤ 0.69) quantum wells on InP substrates Journal of Physics D: Applied Physics. 40: 7656-7661. DOI: 10.1088/0022-3727/40/24/010 |
0.362 |
|
| 2007 |
Xu DP, Huang JYT, Park J, Mawst LJ, Kuech TF, Song X, Babcock SE. Annealing of dilute-nitride GaAsSbN∕InP strained multiple quantum wells Applied Physics Letters. 91: 191909. DOI: 10.1063/1.2805637 |
0.373 |
|
| 2007 |
Xu DP, Huang JYT, Park JH, Mawst LJ, Kuech TF, Vurgaftman I, Meyer JR. Characteristics of dilute-nitride GaAsSbNInP strained multiple quantum wells Applied Physics Letters. 90. DOI: 10.1063/1.2731730 |
0.371 |
|
| 2007 |
Khandekar AA, Yeh JY, Mawst LJ, Song X, Babcock SE, Kuech TF. Effects of Ga- and Sb-precursor chemistry on the alloy composition in pseudomorphically strained GaAs1-ySby films grown via metalorganic vapor phase epitaxy Journal of Crystal Growth. 303: 456-465. DOI: 10.1016/J.Jcrysgro.2006.12.034 |
0.347 |
|
| 2007 |
Khandekar AA, Yeh JY, Mawst LJ, Song X, Babcock SE, Kuech TF. Growth of strained GaAs1-ySby layers using metalorganic vapor phase epitaxy Journal of Crystal Growth. 298: 154-158. DOI: 10.1016/J.Jcrysgro.2006.10.012 |
0.338 |
|
| 2006 |
Arif RA, Kim NH, Mawst LJ, Tansu N. Interdiffused InGaAsP quantum dots lasers on GaAs by metal organic chemical vapor deposition Materials Research Society Symposium Proceedings. 891: 65-70. DOI: 10.1557/Proc-0891-Ee02-05 |
0.835 |
|
| 2006 |
Kanskar M, Cai J, Galstad C, He Y, Macomber SH, Stiers E, Tatavarti-Bharatam SR, Botez D, Mawst LJ. High power conversion efficiency and wavelength stabilized, narrow bandwidth 975nm diode laser pumps Proceedings of Spie - the International Society For Optical Engineering. 6216. DOI: 10.1117/12.669036 |
0.461 |
|
| 2006 |
Anton O, Xu LF, Patel D, Menoni CS, Yeh JY, Van Roy TT, Mawst LJ, Tansu N. The intrinsic frequency response of 1.3-μm InGaAsN lasers in the range T = 10 °C-80 °C Ieee Photonics Technology Letters. 18: 1774-1776. DOI: 10.1109/Lpt.2006.880701 |
0.643 |
|
| 2006 |
Kim NH, Park JH, Mawst LJ, Kuech TF, Kanskar M. Temperature sensitivity of InGaAs quantum-dot lasers grown by MOCVD Ieee Photonics Technology Letters. 18: 989-991. DOI: 10.1109/Lpt.2006.872283 |
0.504 |
|
| 2006 |
Napartovich AP, Elkin NN, Sukharev AG, Troshchieva VN, Vysotsky DV, Nesnidal M, Stiers E, Mawst LJ, Botez D. Comprehensive above-threshold analysis of antiresonant reflecting optical waveguide edge-emitting diode laser Ieee Journal of Quantum Electronics. 42: 589-599. DOI: 10.1109/Jqe.2006.874065 |
0.635 |
|
| 2006 |
Elkin NN, Napartovich AP, Troshchieva VN, Vysotsky DV, Lee TW, Hagness SC, Kim NH, Bao L, Mawst LJ. Antiresonant reflecting optical waveguide-type vertical-cavity surface emitting lasers: Comparison of full-vector finite-difference time-domain and 3-D bidirectional beam propagation methods Journal of Lightwave Technology. 24: 1834-1842. DOI: 10.1109/Jlt.2006.871122 |
0.815 |
|
| 2006 |
Mawst LJ, Yeh JY, Xu DP, Park JH, Huang J, Khandekar A, Kuech TF, Tansu N, Vurgaftman I, Meyer JR. InGaAsN/GaAsSb/GaAs(P) Type-II 'W' quantum well lasers Conference On Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, Cleo/Qels 2006. DOI: 10.1109/CLEO.2006.4627689 |
0.649 |
|
| 2006 |
Kanskar M, He Y, Cai J, Stiers E, Galstad C, Macomber SH, Tatavarti-Bharatam R, Botez D, Mawst LJ. 50% Efficient, > 5 W, distributed feedback broad area laser (975 nm) Conference On Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, Cleo/Qels 2006. DOI: 10.1109/CLEO.2006.4627602 |
0.648 |
|
| 2006 |
Xu L, Patel D, Menoni CS, Yeh JY, Mawst LJ, Tansu N. Optical determination of the electron effective mass of strain compensated In 0.4Ga 0.6As 0.995N 0.005/GaAs single quantum well Applied Physics Letters. 89. DOI: 10.1063/1.2364068 |
0.568 |
|
| 2006 |
Yeh JY, Mawst LJ, Khandekar AA, Kuech TF, Vurgaftman I, Meyer JR, Tansu N. Long wavelength emission of InGaAsNGaAsSb type II "w" quantum wells Applied Physics Letters. 88: 1-3. DOI: 10.1063/1.2171486 |
0.721 |
|
| 2006 |
Kanskar M, He Y, Cai J, Galstad C, MacOmber SH, Stiers E, Botez D, Mawst LJ. 53 wallplug efficiency 975nm distributed feedback broad area laser Electronics Letters. 42: 1455-1457. DOI: 10.1049/El:20062868 |
0.696 |
|
| 2006 |
Park JH, Khandekar AA, Park SM, Mawst LJ, Kuech TF, Nealey PF. Selective MOCVD growth of single-crystal dense GaAs quantum dot array using cylinder-forming diblock copolymers Journal of Crystal Growth. 297: 283-288. DOI: 10.1016/J.Jcrysgro.2006.09.049 |
0.403 |
|
| 2006 |
Yeh JY, Mawst LJ, Khandekar AA, Kuech TF, Vurgaftman I, Meyer JR, Tansu N. Characteristics of InGaAsN-GaAsSb type-II "W" quantum wells Journal of Crystal Growth. 287: 615-619. DOI: 10.1016/J.Jcrysgro.2005.10.087 |
0.606 |
|
| 2006 |
Liang D, Hall DC, Huang JYT, Yeh JY, Mawst LJ. High-index-contrast oxide-confined GaAsP/InGaAsN multi-quantum-well ridge waveguide lasers Conference Digest - Ieee International Semiconductor Laser Conference. 165-166. |
0.438 |
|
| 2006 |
Mawst LJ, Yeh JY. Characteristics of Dilute-Nitride quantum well lasers Optics Infobase Conference Papers. |
0.477 |
|
| 2006 |
Anton O, Menoni CS, Yeh JY, Van Roy TT, Mawst LJ, Tansu N. Effect of nitrogen content and temperature on the f3dB of 1.3μm Dilute-Nitride SQW Lasers Optics Infobase Conference Papers. |
0.358 |
|
| 2006 |
Anton O, Menoni CS, Yeh JY, Van Roy TT, Mawst LJ, Tansu N. Effect of nitrogen content and temperature on the f3dB of 1.3μm Dilute-Nitride SQW Lasers Optics Infobase Conference Papers. |
0.598 |
|
| 2005 |
Lai FI, Kuo HC, Chang YH, Tsai MY, Chu CP, Kuo SY, Wang SC, Tansu N, Yeh JY, Mawst LJ. Temperature-dependent photoluminescence of highly strained InGaAsN/GaAs quantum wells (A = 1.28-1.45 μm) with GaAsP strain-compensated layers Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 44: 6204-6207. DOI: 10.1143/Jjap.44.6204 |
0.622 |
|
| 2005 |
Mawst LJ, Yeh JY, Van Roy T, Tansu N. Characteristics of MOCVD-grown dilute-nitride quantum well lasers Progress in Biomedical Optics and Imaging - Proceedings of Spie. 5738: 192-203. DOI: 10.1117/12.597123 |
0.701 |
|
| 2005 |
Meyer JR, Vurgaftman I, Khandekar AA, Hawkins BE, Yeh JY, Mawst LJ, Kuech TF, Tansu N. Dilute nitride type-II "W" quantum well lasers for the near-infrared and mid-infrared Progress in Biomedical Optics and Imaging - Proceedings of Spie. 5738: 109-119. DOI: 10.1117/12.597115 |
0.627 |
|
| 2005 |
Kanskar M, Earles T, Goodnough T, Stiers E, Botez D, Mawst LJ. High power conversion efficiency AL-free diode lasers for pumping high power solid state laser systems Progress in Biomedical Optics and Imaging - Proceedings of Spie. 5738: 47-56. DOI: 10.1117/12.597097 |
0.362 |
|
| 2005 |
Napartovich AP, Elkin NN, Sukharev AG, Troshchieva VN, Vysotsky DV, Nesnidal M, Stiers E, Mawst LJ, Botez D. Above threshold modeling of single-spatial-mode edge-emitting diode lasers Proceedings of Spie - the International Society For Optical Engineering. 5722: 267-279. DOI: 10.1117/12.589551 |
0.334 |
|
| 2005 |
Napartovich AP, Elkin NN, Sukharev AG, Troshchieva VN, Vysotsky DV, Nesnidal M, Stiers E, Mawst LJ, Botez D. Modeling of above-threshold single-mode operation of edge-emitting diode lasers Nusod '05 - Proceedings of the 5th International Conference On Numerical Simulation of Optoelectronic Devices. 2005: 37-38. DOI: 10.1109/NUSOD.2005.1518123 |
0.626 |
|
| 2005 |
Yeh JY, Mawst LJ, Tansu N. The role of carrier transport on the current injection efficiency of InGaAsN quantum-well lasers Ieee Photonics Technology Letters. 17: 1779-1781. DOI: 10.1109/Lpt.2005.852331 |
0.709 |
|
| 2005 |
Anton O, Menoni CS, Yeh JY, Mawst LJ, Pikal JM, Tansu N. Increased monomolecular recombination in MOCVD grown 1.3-μm InGaAsN-GaAsP-GaAs QW lasers from carrier lifetime measurements Ieee Photonics Technology Letters. 17: 953-955. DOI: 10.1109/Lpt.2005.844332 |
0.653 |
|
| 2005 |
Bao L, Kim NH, Mawst LJ, Elkin NN, Troshchieva VN, Vysotsky DV, Napartovich AP. Modeling, fabrication, and characterization of large aperture two-dimensional antiguided vertical-cavity surface-emitting laser arrays Ieee Journal On Selected Topics in Quantum Electronics. 11: 968-981. DOI: 10.1109/Jstqe.2005.853853 |
0.83 |
|
| 2005 |
Anton OH, Patel D, Menoni CS, Yeh JY, Van Roy TT, Mawst LJ, Pikal JM, Tansu N. Frequency response of strain-compensated InGaAsN-GaAsP-GaAs SQW lasers Ieee Journal On Selected Topics in Quantum Electronics. 11: 1079-1088. DOI: 10.1109/Jstqe.2005.853845 |
0.695 |
|
| 2005 |
Shterengas L, Belenky GL, Yeh JY, Mawst LJ, Tansu N. Differential gain and linewidth-enhancement factor in dilute-nitride GaAs-based 1.3-/spl mu/m diode lasers Ieee Journal On Selected Topics in Quantum Electronics. 11: 1063-1068. DOI: 10.1109/Jstqe.2005.853736 |
0.754 |
|
| 2005 |
Khandekar AA, Hawkins BE, Kuech TF, Yeh JY, Mawst LJ, Meyer JR, Vurgaftman I, Tansu N. Characteristics of GaAsNGaAsSb type-II quantum wells grown by metalorganic vapor phase epitaxy on GaAs substrates Journal of Applied Physics. 98. DOI: 10.1063/1.2148620 |
0.588 |
|
| 2005 |
Thränhardt A, Kuznetsova I, Schlichenmaier C, Koch SW, Shterengas L, Belenky G, Yeh JY, Mawst LJ, Tansu N, Hader J, Moloney JV, Chow WW. Nitrogen incorporation effects on gain properties of GaInNAs lasers: Experiment and theory Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1929880 |
0.643 |
|
| 2005 |
Kim NH, Ramamurthy P, Mawst LJ, Kuech TF, Modak P, Goodnough TJ, Forbes DV, Kanskar M. Characteristics of InGaAs quantum dots grown on tensile-strained GaAs 1-xP x Journal of Applied Physics. 97. DOI: 10.1063/1.1884249 |
0.508 |
|
| 2005 |
Palmer DJ, Smowton PM, Blood P, Yeh JY, Mawst LJ, Tansu N. Effect of nitrogen on gain and efficiency in InGaAsN quantum-well lasers Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1868070 |
0.741 |
|
| 2005 |
Tansu N, Mawst LJ. Current injection efficiency of InGaAsN quantum-well lasers Journal of Applied Physics. 97. DOI: 10.1063/1.1852697 |
0.678 |
|
| 2005 |
Kanskar M, Earles T, Goodnough TJ, Stiers E, Botez D, Mawst LJ. 73% CW power conversion efficiency at 50 W from 970 nm diode laser bars Electronics Letters. 41: 245-247. DOI: 10.1049/el:20058260 |
0.45 |
|
| 2005 |
Palmer DJ, Smowton PM, Blood P, Yeh JY, Mawst LJ, Tansu N. The effect of temperature on the efficiency of InGaAs and InGaAsN quantum well laser structures 2005 Conference On Lasers and Electro-Optics, Cleo. 1: 101-103. |
0.377 |
|
| 2005 |
Mawst LJ, Yeh JY, Tansu N. Characteristics of dilute-nitride quantum well lasers 2005 Conference On Lasers and Electro-Optics, Cleo. 1: 98-100. |
0.671 |
|
| 2005 |
Kanskar M, Goodnough T, Stiers E, Botez D, Mawst LJ. High power conversion efficiency diode lasers for pumping high power solid state laser systems 24th International Congress On Applications of Lasers and Electro-Optics, Icaleo 2005 - Congress Proceedings. 196-200. |
0.374 |
|
| 2005 |
Anton O, Menoni CS, Yeh JY, Van Roy TT, Mawst LJ, Tansu N. Effect of nitrogen content and temperature on the f 3dB of 1.3μm Dilute-Nitride SQW Lasers 2005 Conference On Lasers and Electro-Optics, Cleo. 1: 92-94. |
0.335 |
|
| 2005 |
Palmer DJ, Smowton PM, Blood P, Yeh JY, Mawst LJ, Tansu N. The effect of temperature on the efficiency of InGaAs and InGaAsN quantum well laser structures 2005 Conference On Lasers and Electro-Optics, Cleo. 1: 101-103. |
0.61 |
|
| 2004 |
Chang YH, Kuo HC, Chang YA, Tsai MY, Wang SC, Tansu N, Yeh J, Mawst LJ. Temperature dependent photoluminescence of highly strained InGaAsN/GaAs Quantum Well ( λ=1.28-1.45 μm) with GaAsP strain-compensated layer The Japan Society of Applied Physics. 2004: 82-83. DOI: 10.7567/Ssdm.2004.F-1-2 |
0.661 |
|
| 2004 |
Kim NH, Lee TW, Bao L, Hagness SC, Mawst LJ. Modal characteristics of large aperture ARROW VCSELs Proceedings of Spie - the International Society For Optical Engineering. 5364: 101-110. DOI: 10.1117/12.524525 |
0.326 |
|
| 2004 |
Yeh JY, Tansu N, Mawst LJ. Temperature-Sensitivity Analysis of 1360-nm Dilute-Nitride Quantum-Well Lasers Ieee Photonics Technology Letters. 16: 741-743. DOI: 10.1109/Lpt.2004.823715 |
0.721 |
|
| 2004 |
Tansu N, Yeh JY, Mawst LJ. Physics and characteristics of high performance 1200 nm InGaAs and 1300-1400 nm InGaAsN quantum well lasers obtained by metal-organic chemical vapour deposition Journal of Physics Condensed Matter. 16. DOI: 10.1088/0953-8984/16/31/020 |
0.763 |
|
| 2004 |
Vurgaftman I, Meyer JR, Tansu N, Mawst LJ. InP-based dilute-nitride mid-infrared type-II "W" quantum-well lasers Journal of Applied Physics. 96: 4653-4655. DOI: 10.1063/1.1794898 |
0.67 |
|
| 2004 |
Bao L, Kim N, Mawst LJ, Elkin NN, Troshchieva VN, Vysotsky DV, Napartovich AP. Near-diffraction-limited coherent emission from large aperture antiguided vertical-cavity surface-emitting laser arrays Applied Physics Letters. 84: 320-322. DOI: 10.1063/1.1640799 |
0.835 |
|
| 2004 |
Yeh JY, Tansu N, Mawst LJ. Long wavelength MOCVD grown InGaAsN-GaAsN quantum well lasers emitting at 1.378-1.41 μm Electronics Letters. 40: 739-741. DOI: 10.1049/El:20040474 |
0.735 |
|
| 2004 |
Yeh JY, Mawst LJ, Tansu N. Characteristics of InGaAsN/GaAsN quantum well lasers emitting in the 1.4-μm regime Journal of Crystal Growth. 272: 719-725. DOI: 10.1016/J.Jcrysgro.2004.09.005 |
0.759 |
|
| 2004 |
Yeh JY, Tansu N, Mawst LJ. Effects of growth pause on the structural and optical properties of InGaAsN-InGaAsP quantum well Journal of Crystal Growth. 265: 1-7. DOI: 10.1016/J.Jcrysgro.2004.01.022 |
0.61 |
|
| 2004 |
Forbes D, Corbett P, Hansen D, Goodnough T, Zhang L, Myli K, Yeh J, Mawst L. The effect of reactor pressure on selective area epitaxy of GaAs in a close-coupled showerhead reactor Journal of Crystal Growth. 261: 427-432. DOI: 10.1016/J.Jcrysgro.2003.11.038 |
0.302 |
|
| 2004 |
Yeh JY, Mawst LJ, Tansu N. Carrier transport and injection efficiency of InGaAsN quantum-well lasers Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 2: 693-694. |
0.593 |
|
| 2004 |
Anton O, Menoni CS, Yeh JY, Van Roy TT, Mawst LJ, Tansu N. The 3dB bandwidth of strain-compensated dilute-nitride quantum-well lasers Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 2: 697-698. |
0.613 |
|
| 2004 |
Bao L, Kim NH, Elkin NN, Troshchieva VN, Vysotsky DV, Napartovich AP, Mawst LJ. Modal properties of 2D anti-guided vertical cavity surface emitting laser arrays Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 1: 248-249. |
0.301 |
|
| 2004 |
Kanskar M, Dai Z, Earles T, Forbes D, Goodnough T, Nesnidal M, Stiers E, Botez D, Kim N, Kuech TF, Mawst LJ. High power conversion efficiency 970nm aluminum-free diode lasers Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 2: 475-476. |
0.354 |
|
| 2003 |
Mawst LJ, Tansu N, Yeh JY. MOCVD-Grown InGaAsN Quantum-Well Lasers Proceedings of Spie - the International Society For Optical Engineering. 4995: 39-53. DOI: 10.1117/12.475793 |
0.682 |
|
| 2003 |
Tansu N, Yeh JY, Mawst LJ. High-Performance 1200-nm InGaAs and 1300-nm InGaAsN Quantum-Well Lasers by Metalorganic Chemical Vapor Deposition Ieee Journal On Selected Topics in Quantum Electronics. 9: 1220-1227. DOI: 10.1109/Jstqe.2003.820911 |
0.755 |
|
| 2003 |
Tansu N, Mawst LJ. Design analysis of 1550-nm GaAsSb-(In)GaAsN type-II quantum-well laser active regions Ieee Journal of Quantum Electronics. 39: 1205-1210. DOI: 10.1109/Jqe.2003.817235 |
0.666 |
|
| 2003 |
Vurgaftman I, Meyer JR, Tansu N, Mawst LJ. (In)GaAsN-based type-II "W" quantum-well lasers for emission at λ = 1.55 μm Applied Physics Letters. 83: 2742-2744. DOI: 10.1063/1.1616193 |
0.651 |
|
| 2003 |
Tansu N, Yeh JY, Mawst LJ. Low-threshold 1317-nm InGaAsN quantum-well lasers with GaAsN barriers Applied Physics Letters. 83: 2512-2514. DOI: 10.1063/1.1613998 |
0.642 |
|
| 2003 |
Tansu N, Yeh JY, Mawst LJ. Experimental evidence of carrier leakage in InGaAsN quantum-well lasers Applied Physics Letters. 83: 2112-2114. DOI: 10.1063/1.1611279 |
0.761 |
|
| 2003 |
Tansu N, Quandt A, Kanskar M, Mulhearn W, Mawst LJ. High-performance and high-temperature continuous-wave-operation 1300 nm InGaAsN quantum well lasers by organometallic vapor phase epitaxy Applied Physics Letters. 83: 18-20. DOI: 10.1063/1.1591238 |
0.704 |
|
| 2003 |
Tansu N, Yeh JY, Mawst LJ. Extremely low threshold-current-density InGaAs quantum-well lasers with emission wavelength of 1215-1233 nm Applied Physics Letters. 82: 4038-4040. DOI: 10.1063/1.1581978 |
0.74 |
|
| 2003 |
Tansu N, Yeh JY, Mawst LJ. Improved photoluminescence of InGaAsN-(In)GaAsP quantum well by organometallic vapor phase epitaxy using growth pause annealing Applied Physics Letters. 82: 3008-3010. DOI: 10.1063/1.1572470 |
0.681 |
|
| 2003 |
Tansu N, Mawst LJ. The role of hole leakage in 1300-nm InGaAsN quantum-well lasers Applied Physics Letters. 82: 1500-1502. DOI: 10.1063/1.1558218 |
0.653 |
|
| 2003 |
Lee J, Mawst L, Botez D. Improved-performance, InGaAs∕InGaAsP (=980 nm) asymmetric broad-waveguide diode lasers via waveguide-core doping Electronics Letters. 39: 1250. DOI: 10.1049/El:20030830 |
0.61 |
|
| 2003 |
Lee J, Mawst L, Botez D. MOCVD growth of asymmetric 980nm InGaAs/InGaAsP broad-waveguide diode lasers for high power applications Journal of Crystal Growth. 249: 100-105. DOI: 10.1016/S0022-0248(02)02110-3 |
0.738 |
|
| 2003 |
Yeh JY, Tansu N, Mawst LJ. Long wavelength MOCVD-grown InGaAsN-InGaAsP-GaAs quantum-well lasers Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 269-272. |
0.642 |
|
| 2003 |
Yeh JY, Tansu N, Mawst LJ. Temperature sensitivity of 1360 nm InGaAsN quantum well lasers Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 1: 41-42. |
0.647 |
|
| 2003 |
Tansu N, Mawst LJ, Vurgaftman I, Meyer JR. GaAsSb-(In)GaAsN type-II quantum-well lasers on GaAs substrate Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 1: 37-38. |
0.562 |
|
| 2002 |
Tansu N, Mawst LJ. Analysis temperature of characteristics of highly-strained InGaAs-GaAsP-GaAs (λ>1.17 μm) quantum well lasers Proceedings of Spie - the International Society For Optical Engineering. 4646: 302-312. DOI: 10.1117/12.470529 |
0.622 |
|
| 2002 |
Tansu N, Mawst LJ. Temperature sensitivity of 1300-nm InGaAsN quantum-well lasers Ieee Photonics Technology Letters. 14: 1052-1054. DOI: 10.1109/Lpt.2002.1021966 |
0.706 |
|
| 2002 |
Lee J, Mawst L, Botez D. Asymmetric broad waveguide diode lasers (/spl lambda/ = 980 nm) of large equivalent transverse spot size and low temperature sensitivity Ieee Photonics Technology Letters. 14: 1046-1048. DOI: 10.1109/Lpt.2002.1021964 |
0.692 |
|
| 2002 |
Zhou D, Mawst LJ, Dai Z. Modal properties of two-dimensional antiguided vertical-cavity surface-emitting laser arrays Ieee Journal of Quantum Electronics. 38: 652-664. DOI: 10.1109/Jqe.2002.1005416 |
0.449 |
|
| 2002 |
Chang JC, Lee JJ, Al-Muhanna A, Mawst LJ, Botez D. Comprehensive above-threshold analysis of large-aperture (8–10 μm) antiresonant reflecting optical waveguide diode lasers Applied Physics Letters. 81: 4901-4903. DOI: 10.1063/1.1531830 |
0.658 |
|
| 2002 |
Tansu N, Kirsch NJ, Mawst LJ. Low-threshold-current-density 1300-nm dilute-nitride quantum well lasers Applied Physics Letters. 81: 2523-2525. DOI: 10.1063/1.1511290 |
0.629 |
|
| 2002 |
Tansu N, Mawst LJ. High performance 1300-nm dilute-nitride quantum well lasers by MOCVD Conference Digest - Ieee International Semiconductor Laser Conference. 33-34. |
0.678 |
|
| 2001 |
Ivanisevic A, Yeh JY, Mawst L, Kuech TF, Ellis AB. Light-emitting diodes as chemical sensors. Nature. 409: 476. PMID 11206534 DOI: 10.1038/35054131 |
0.457 |
|
| 2001 |
Tansu N, Mawst LJ. InGaAs/GaAsP/InGaP strain compensated quantum well (λ=1.17 μm) diode lasers on GaAs Proceedings of Spie - the International Society For Optical Engineering. 4287: 188-194. DOI: 10.1117/12.429800 |
0.694 |
|
| 2001 |
Lee TW, Hagness SC, Zhou D, Mawst LJ. Modal characteristics of ARROW-type vertical-cavity surface-emitting lasers Ieee Photonics Technology Letters. 13: 770-772. DOI: 10.1109/68.935798 |
0.842 |
|
| 2001 |
Zhou D, Lee TW, Tansu N, Hagness S, Mawst LJ. Large spot-size narrow waveguide VCSEL Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 2: 469-470. |
0.618 |
|
| 2000 |
Zhou D, Mawst LJ. Two-dimensional phase-locked antiguided vertical-cavity surface-emitting laser arrays Applied Physics Letters. 77: 2307-2309. DOI: 10.1063/1.1317545 |
0.827 |
|
| 2000 |
Zhou D, Mawst LJ. Simplified-antiresonant reflecting optical waveguide-type vertical-cavity surface-emitting lasers Applied Physics Letters. 76: 1659-1661. DOI: 10.1063/1.126127 |
0.841 |
|
| 2000 |
Yang H, Mawst LJ, Botez D. 1.6 W continuous-wave coherent power from large-index-step (Δn≈0.1) near-resonant, antiguided diode laser arrays Applied Physics Letters. 76: 1219-1221. DOI: 10.1063/1.125990 |
0.383 |
|
| 2000 |
Rusli S, Al-Muhanna A, Earles T, Mawst L. 1 W CW reliable = 730 nm aluminium-free active layer diode laser Electronics Letters. 36: 630. DOI: 10.1049/El:20000317 |
0.466 |
|
| 1999 |
Mirabedini A, Mawst L, Botez D, Marsland R. High reproducibility for deep-quantum-well resonant tunnelling diodes grown by metal organic chemical vapour deposition Electronics Letters. 35: 669. DOI: 10.1049/El:19990446 |
0.639 |
|
| 1998 |
Mawst LJ, Wade JK, Al-Muhanna A. High-power Al-free active-region diode lasers High-Power Lasers and Applications. 3284: 2-10. DOI: 10.1117/12.304431 |
0.846 |
|
| 1998 |
Levron D, Walter DK, Appelt S, Fitzgerald RJ, Kahn D, Korbly SE, Sauer KL, Happer W, Earles TL, Mawst LJ, Botez D, Harvey M, Dimarco L, Connolly JC, Möller HE, et al. Magnetic resonance imaging of hyperpolarized 129Xe produced by spin exchange with diode-laser pumped Cs Applied Physics Letters. 73: 2666-2668. DOI: 10.1063/1.122547 |
0.552 |
|
| 1998 |
Earles T, Mawst LJ, Botez D. 1.1 W continuous-wave, narrow spectral width (<1 Å) emission from broad-stripe, distributed-feedback diode lasers (λ=0.893 μm) Applied Physics Letters. 73: 2072-2074. DOI: 10.1063/1.122381 |
0.724 |
|
| 1998 |
Al-Muhanna A, Mawst LJ, Botez D, Garbuzov DZ, Martinelli RU, Connolly JC. High-power (>10 W) continuous-wave operation from 100-μm-aperture 0.97-μm-emitting Al-free diode lasers Applied Physics Letters. 73: 1182-1184. DOI: 10.1063/1.122122 |
0.383 |
|
| 1998 |
Nesnidal MP, Earles T, Mawst LJ, Botez D, Buus J. 0.45 W diffraction-limited beam and single-frequency operation from antiguided phase-locked laser array with distributed feedback grating Applied Physics Letters. 73: 587-589. DOI: 10.1063/1.121864 |
0.598 |
|
| 1998 |
Al-Muhanna A, Wade JK, Mawst LJ, Fu RJ. 730-nm-emitting Al-free active-region diode lasers with compressively strained InGaAsP quantum wells Applied Physics Letters. 72: 641-643. DOI: 10.1063/1.120831 |
0.866 |
|
| 1998 |
Wade JK, Mawst LJ, Botez D, Nabiev RF, Jansen M, Morris JA. 6.1 W continuous wave front-facet power from Al-free active-region (λ=805 nm) diode lasers Applied Physics Letters. 72: 4-6. DOI: 10.1063/1.120628 |
0.857 |
|
| 1998 |
Wade J, Mawst L, Botez D, Morris J. 8.8 W CW power from broad-waveguide Al-free active-region ( = 805 nm) diode lasers Electronics Letters. 34: 1100. DOI: 10.1049/El:19980775 |
0.841 |
|
| 1998 |
Li J, Mirabedini A, Mawst LJ, Savage DE, Matyi RJ, Kuech TF. Effect of interface roughness on performance of AlGaAs/InGaAs/GaAs resonant tunneling diodes Journal of Crystal Growth. 195: 617-623. DOI: 10.1016/S0022-0248(98)00581-8 |
0.416 |
|
| 1998 |
Mawst L, Yang H, Nesnidal M, Al-Muhanna A, Botez D, Vang T, Alvarez F, Johnson R. High-power, single-mode, Al-free InGaAs(P)/InGaP/GaAs distributed feedback diode lasers Journal of Crystal Growth. 195: 609-616. DOI: 10.1016/S0022-0248(98)00564-8 |
0.692 |
|
| 1997 |
Al-Muhanna A, Mawst LJ, Botez D, Garbuzov DZ, Martinelli RU, Connolly JC. 14.3 W quasicontinuous wave front-facet power from broad-waveguide Al-free 970 nm diode lasers Applied Physics Letters. 71: 1142-1144. DOI: 10.1063/1.119847 |
0.696 |
|
| 1997 |
Wade JK, Mawst LJ, Botez D, Nabiev RF, Jansen M. 5 W continuous wave power, 0.81-μm-emitting, Al-free active-region diode lasers Applied Physics Letters. 71: 172-174. DOI: 10.1063/1.119528 |
0.854 |
|
| 1997 |
Mirabedini AR, Mawst LJ, Botez D, Marsland RA. High peak-current-density strained-layer In0.3Ga0.7As/Al0.8Ga0.2As resonant tunneling diodes grown by metal-organic chemical vapor deposition Applied Physics Letters. 70: 2867-2869. DOI: 10.1063/1.119027 |
0.523 |
|
| 1997 |
Wade JK, Mawst LJ, Botez D, Jansen M, Fang F, Nabiev RF. High continuous wave power, 0.8 μm-band, Al-free active-region diode lasers Applied Physics Letters. 70: 149-151. DOI: 10.1063/1.118343 |
0.823 |
|
| 1997 |
Botez D, Mawst L, Bhattacharya A, Lopez J, Li J, Kuech T, Iakovlev V, Suruceanu G, Caliman A, Syrbu A, Morris J. 6 W CW front-facet power from short-cavity (0.5 mm), 100 [micro sign]m stripe Al-free 0.98 [micro sign]m-emitting diode lasers Electronics Letters. 33: 2037. DOI: 10.1049/El:19971390 |
0.75 |
|
| 1997 |
Yang H, Mawst L, Nesnidal M, Lopez J, Bhattacharya A, Botez D. 10 W near-diffraction-limited peak pulsed power from Al-free, 0.98 [micro sign]m-emitting phase-locked antiguided arrays Electronics Letters. 33: 136. DOI: 10.1049/El:19970099 |
0.75 |
|
| 1997 |
Mawst L, Bhattacharya A, Nesnidal M, Lopez J, Botez D, Syrbu A, Yakovlev V, Suruceanu G, Mereutza A, Jansen M, Nabiev R. MOVPE-grown high CW power InGaAs/InGaAsP/InGaP diode lasers Journal of Crystal Growth. 170: 383-389. DOI: 10.1016/S0022-0248(96)00513-1 |
0.808 |
|
| 1996 |
Nesnidal M, Mawst L, Bhattacharya A, Botez D, DiMarco L, Connolly J, Abeles J. Single-frequency, single-spatial-mode ROW-DFB diode laser arrays Ieee Photonics Technology Letters. 8: 182-184. DOI: 10.1109/68.484234 |
0.75 |
|
| 1996 |
Botez D, Mawst L. Phase-locked laser arrays revisited Ieee Circuits and Devices Magazine. 12: 25-32. DOI: 10.1109/101.544448 |
0.338 |
|
| 1996 |
Mawst LJ, Bhattacharya A, Lopez J, Botez D, Garbuzov DZ, DeMarco L, Nabiev RF, Jansen M, Fang F, Nabiev RF. Erratum: ‘‘8 W continuous wave front‐facet power from broad‐waveguide Al‐free 980 nm diode lasers’’ [Appl. Phys. Lett. 69, 1532 (1996)] Applied Physics Letters. 69: 3437-3437. DOI: 10.1063/1.118163 |
0.707 |
|
| 1996 |
Mawst LJ, Bhattacharya A, Lopez J, Botez D, Garbuzov DZ, DeMarco L, Connolly JC, Jansen M, Fang F, Nabiev RF. 8 W continuous wave front‐facet power from broad‐waveguide Al‐free 980 nm diode lasers Applied Physics Letters. 69: 1532-1534. DOI: 10.1063/1.117995 |
0.703 |
|
| 1996 |
Bhattacharya A, Mawst LJ, Nayak S, Li J, Kuech TF. Interface structures of InGaAs/InGaAsP/InGaP quantum well laser diodes grown by metalorganic chemical vapor deposition on GaAs substrates Applied Physics Letters. 68: 2240-2242. DOI: 10.1063/1.115871 |
0.707 |
|
| 1996 |
Botez D, Mawst L, Bhattacharya A, Lopez J, Li J, Kuech T, Iakovlev V, Suruceanu G, Caliman A, Syrbu A. 66% CW wallplug efficiency from Al-free 0.98 [micro sign]m-emitting diode lasers Electronics Letters. 32: 2012. DOI: 10.1049/El:19961300 |
0.69 |
|
| 1996 |
Bhattacharya A, Mawst L, Nesnidal M, Lopez J, Botez D. 0.4 W CW diffraction limited beam Al free 0.98 [micro sign]m wavelength three core ARROW-type diode lasers Electronics Letters. 32: 657. DOI: 10.1049/El:19960456 |
0.758 |
|
| 1996 |
Syrbu A, Yakovlev V, Suruceanu G, Mereutza A, Mawst L, Bhattacharya A, Nesnidal M, Lopez J, Botez D. ZnSe-facet-passivated InGaAs/InGaAsP/InGaP diode lasers of high CW power and ‘wallplug’ efficiency Electronics Letters. 32: 352. DOI: 10.1049/el:19960251 |
0.683 |
|
| 1995 |
Goltser IV, Mawst LJ, Botez D. Single-cladding antiresonant reflecting optical waveguide-type diode laser. Optics Letters. 20: 2219. PMID 19862303 DOI: 10.1364/Ol.20.002219 |
0.684 |
|
| 1995 |
Mawst LJ, Bhattacharya A, Nesnidal M, Lopez J, Botez D, Morris JA, Zory P. High continuous wave output power InGaAs/InGaAsP/InGaP diode lasers: Effect of substrate misorientation Applied Physics Letters. 67: 2901-2903. DOI: 10.1063/1.114836 |
0.853 |
|
| 1995 |
Mawst LJ, Botez D, Nabiev RF, Zmudzinski C. Above‐threshold behavior of high‐power, single‐mode antiresonant reflecting optical waveguide diode lasers Applied Physics Letters. 66: 7-9. DOI: 10.1063/1.114152 |
0.68 |
|
| 1995 |
Bhattacharya A, Botez D, Nesnidal M, Lopez J, Mawst L. High power narrow beam singlemode ARROW-type InGaAs/InGaAsP/InGaP diode lasers Electronics Letters. 31: 1837-1838. DOI: 10.1049/El:19951233 |
0.648 |
|
| 1995 |
Mawst L, Bhattacharya A, Nesnidal M, Lopez J, Botez D, Morris J, Zory P. High CW output power and ‘wallplug’ efficiency Al-free InGaAs/InGaAsP/InGaP double quantum well diode lasers Electronics Letters. 31: 1153. DOI: 10.1049/El:19950812 |
0.851 |
|
| 1994 |
Mawst LJ, Tu C, Zmudzinski C, Botez D, Martin R, Mazed M. Single‐frequency antiguided laser array with buried distributed feedback grating Journal of Applied Physics. 75: 7220-7223. DOI: 10.1063/1.356677 |
0.639 |
|
| 1993 |
Mawst LJ, Botez D, Zmudzinski C, Tu CA, Jansen M. Single-mode ARROW-type diode lasers Proceedings of Spie. 1850: 37-50. DOI: 10.1117/12.146921 |
0.68 |
|
| 1993 |
Zmudzinski C, Botez D, Mawst LJ, Tu CA. Coherent 1-W cw operation of large-aperture resonant arrays of antiguides Proceedings of Spie. 1850: 13-22. DOI: 10.1117/12.146904 |
0.689 |
|
| 1993 |
Mar A, Helkey R, Reynolds T, Bowers J, Botez D, Zmudzinski C, Tu C, Mawst L. Mode-locked multisegment resonant-optical-waveguide diode laser arrays Ieee Photonics Technology Letters. 5: 1355-1359. DOI: 10.1109/68.262539 |
0.702 |
|
| 1993 |
Mawst L, Boetz D, Jansen M, Zmudzinski C, Ou S, Sergant M, Tu C, Roth T, Peterson G, Valley M, Yang J. Two-dimensional surface-emitting leaky-wave coupled laser arrays Ieee Journal of Quantum Electronics. 29: 1906-1917. DOI: 10.1109/3.234452 |
0.432 |
|
| 1993 |
Botez D, Jansen M, Zmudzinski C, Mawst LJ, Hayashida P, Tu C, Nabiev RF. Flat‐phasefront fanout‐type power amplifier employing resonant‐optical‐waveguide structures Applied Physics Letters. 63: 3113-3115. DOI: 10.1063/1.110220 |
0.606 |
|
| 1993 |
Zmudzinski C, Botez D, Mawst LJ, Tu C, Frantz L. Coherent 1 W continuous wave operation of large‐aperture resonant arrays of antiguided diode lasers Applied Physics Letters. 62: 2914-2916. DOI: 10.1063/1.109195 |
0.685 |
|
| 1993 |
Jansen M, Botez D, Mawst LJ, Roth TJ, Yang JJ, Ou SS, Hayashida P, Dozal LA. Injection locking of leaky‐wave coupled resonant optical waveguide arrays Applied Physics Letters. 62: 547-549. DOI: 10.1063/1.108906 |
0.575 |
|
| 1992 |
Ou SS, Jansen M, Yang JJ, Sergant M, Mawst LJ, Botez D, Roth TJ, Hess CA, Tu C. High-performance surface-emitting lasers with dry-etched facets Proceedings of Spie. 1703: 143-153. DOI: 10.1117/12.138375 |
0.713 |
|
| 1992 |
Mawst L, Botez D, Zmudzinski C, Tu C. Design optimization of ARROW-type diode lasers Ieee Photonics Technology Letters. 4: 1204-1206. DOI: 10.1109/68.166943 |
0.666 |
|
| 1992 |
Mawst LJ, Botez D, Zmudzinski C, Tu C. Antiresonant reflecting optical waveguide‐type, single‐mode diode lasers Applied Physics Letters. 61: 503-505. DOI: 10.1063/1.108475 |
0.679 |
|
| 1992 |
Ou SS, Botez D, Mawst LJ, Jansen M, Sergant M, Roth TJ, Yang JJ. High‐power coherent surface‐emitting antiguided diode laser arrays Applied Physics Letters. 61: 627-629. DOI: 10.1063/1.107828 |
0.661 |
|
| 1992 |
Jansen M, Botez D, Mawst LJ, Roth TJ, Yang JJ, Hayashida P, Dozal L, Rozenbergs J. Injection locking of antiguided resonant optical waveguide arrays Applied Physics Letters. 60: 26-28. DOI: 10.1063/1.107355 |
0.629 |
|
| 1992 |
Botez D, Mawst LJ. Γ effect: Key intermodal‐discrimination mechanism in arrays of antiguided diode lasers Applied Physics Letters. 60: 3096-3098. DOI: 10.1063/1.106763 |
0.38 |
|
| 1992 |
Mawst LJ, Botez D, Zmudzinski C, Jansen M, Tu C, Roth TJ, Yun J. Resonant self‐aligned‐stripe antiguided diode laser array Applied Physics Letters. 60: 668-670. DOI: 10.1063/1.106586 |
0.685 |
|
| 1992 |
Zmudzinski CA, Botez D, Mawst LJ. Simple description of laterally resonant, distributed‐feedback‐like modes of arrays of antiguides Applied Physics Letters. 60: 1049-1051. DOI: 10.1063/1.106440 |
0.595 |
|
| 1992 |
Mawst L, Botez D, Zmudzinski C, Tu C. 0.3 W CW single-spatial-mode operation from large-core arrow-type diode lasers Electronics Letters. 28: 1793. DOI: 10.1049/El:19921143 |
0.695 |
|
| 1992 |
Zmudzinski C, Mawst L, Botez D, Tu C, Wang C. 1 W diffraction-limited-beam operation of resonant-optical-waveguide diode laser arrays at 0.98 μm Electronics Letters. 28: 1543. DOI: 10.1049/El:19920980 |
0.696 |
|
| 1991 |
Mawst LJ, Botez D, Jansen M, Sergant M, Peterson G, Roth TJ. Leaky‐wave interarray coupling for coherent‐power scaling of phase‐locked diode‐laser arrays of antiguides Applied Physics Letters. 59: 1655-1657. DOI: 10.1063/1.106258 |
0.577 |
|
| 1991 |
Ou SS, Jansen M, Yang JJ, Mawst LJ, Roth TJ. High‐power cw operation of InGaAs/GaAs surface‐emitting lasers with 45° intracavity micro‐mirrors Applied Physics Letters. 59: 2085-2087. DOI: 10.1063/1.106140 |
0.541 |
|
| 1991 |
Jansen M, Yang JJ, Ou SS, Sergant M, Mawst L, Rozenbergs J, Wilcox J, Botez D. Monolithic two‐dimensional surface‐emitting diode laser arrays mounted in the junction‐down configuration Applied Physics Letters. 59: 2663-2665. DOI: 10.1063/1.105932 |
0.652 |
|
| 1991 |
Botez D, Jansen M, Mawst LJ, Peterson G, Roth TJ. Watt‐range, coherent, uniphase powers from phase‐locked arrays of antiguided diode lasers Applied Physics Letters. 58: 2070-2072. DOI: 10.1063/1.105013 |
0.41 |
|
| 1991 |
Ou SS, Yang JJ, Jansen M, Sergant M, Mawst LJ, Wilcox JZ. High performance surface‐emitting lasers with 45° intracavity micromirrors Applied Physics Letters. 58: 16-18. DOI: 10.1063/1.104435 |
0.475 |
|
| 1991 |
Mawst LJ, Botez D, Roth TJ, Peterson G, Rozenbergs J. cw high‐power diffraction‐limited‐beam operation from resonant optical waveguide arrays of diode lasers Applied Physics Letters. 58: 22-24. DOI: 10.1063/1.104425 |
0.653 |
|
| 1991 |
Mawst L, Botez D, Jansen M, Roth T, Tu C, Zmudzinski C. 0.5 W CW diffraction-limited-beam operation from high-efficiency resonant-optical-waveguide diode-laser arrays Electronics Letters. 27: 1586. DOI: 10.1049/El:19910993 |
0.656 |
|
| 1991 |
Mawst L, Botez D, Jansen M, Roth T, Rozenbergs J. 1.5 W diffraction-limited-beam operation from resonant-optical-waveguide (ROW) array Electronics Letters. 27: 369. DOI: 10.1049/El:19910233 |
0.632 |
|
| 1990 |
Mawst L, Botez D, Jansen M, Roth T, Yang J. Highly coherent, in-phase-mode operation of 20-element resonant arrays of antiguides Ieee Photonics Technology Letters. 2: 249-252. DOI: 10.1109/68.53252 |
0.599 |
|
| 1989 |
Botez D, Mawst LJ, Hayashida P, Roth TJ. High‐power, diffraction‐limited‐beam operation from interferometric, phase‐locked arrays of AlGaAs/GaAs diode lasers Journal of Applied Physics. 65: 3716-3718. DOI: 10.1063/1.342601 |
0.613 |
|
| 1989 |
Jansen M, Yang JJ, Ou SS, Botez D, Wilcox J, Mawst L. Diffraction‐limited operation from monolithically integrated diode laser array and self‐imaging (Talbot) cavity Applied Physics Letters. 55: 1949-1951. DOI: 10.1063/1.102153 |
0.67 |
|
| 1989 |
Mawst LJ, Botez D, Jansen M, Roth TJ, Peterson G. High‐power, narrow single‐lobe operation from 20‐element phase‐locked arrays of antiguides Applied Physics Letters. 55: 2060-2062. DOI: 10.1063/1.102105 |
0.617 |
|
| 1989 |
Mawst LJ, Botez D, Roth TJ, Peterson G. High‐power, in‐phase‐mode operation from resonant phase‐locked arrays of antiguided diode lasers Applied Physics Letters. 55: 10-12. DOI: 10.1063/1.101741 |
0.379 |
|
| 1989 |
Wilcox JZ, Simmons WW, Botez D, Jansen M, Mawst LJ, Peterson G, Wilcox TJ, Yang JJ. Design considerations for diffraction coupled arrays with monolithically integrated self‐imaging cavities Applied Physics Letters. 54: 1848-1850. DOI: 10.1063/1.101255 |
0.595 |
|
| 1989 |
Zinkiewicz LM, Roth TJ, Mawst LJ, Tran D, Botez D. High-power vertical-cavity surface-emitting AlGaAs/GaAs diode lasers Applied Physics Letters. 54: 1959-1961. DOI: 10.1063/1.101184 |
0.703 |
|
| 1989 |
Botez D, Hayashida P, Mawst L, Roth T, Peterson G. Diffraction-limited in-phase-mode operation from uniform array of antiguides with enhanced interelement loss Electronics Letters. 25: 1282. DOI: 10.1049/El:19890858 |
0.606 |
|
| 1989 |
Mawst L, Botez D, Roth T, Simmons W, Peterson G, Jansen M, Wilcox J, Yang J. Phase-locked array of antiguided lasers with monolithic spatial filter Electronics Letters. 25: 365. DOI: 10.1049/El:19890253 |
0.593 |
|
| 1988 |
Botez D, Hayashida P, Mawst LJ, Roth TJ. Diffraction‐limited‐beam, high‐power operation fromX‐junction coupled phase‐locked arrays of AlGaAs/GaAs diode lasers Applied Physics Letters. 53: 1366-1368. DOI: 10.1063/1.99980 |
0.655 |
|
| 1988 |
Botez D, Mawst L, Hayashida P, Roth TJ, Anderson E. Stable, single‐(array)‐mode operation from phase‐locked, interferometric arrays of index‐guided AlGaAs/GaAs diode lasers Applied Physics Letters. 52: 266-268. DOI: 10.1063/1.99489 |
0.681 |
|
| 1988 |
Mawst LJ, Botez D, Roth TJ. High‐power, diffraction‐limited‐beam operation from diode‐laser phase‐locked arrays operating in coupled first‐order modes Applied Physics Letters. 53: 1236-1238. DOI: 10.1063/1.100024 |
0.58 |
|
| 1988 |
Botez D, Mawst L, Peterson G. Resonant leaky-wave coupling in linear arrays of antiguides Electronics Letters. 24: 1328. DOI: 10.1049/El:19880903 |
0.549 |
|
| 1988 |
Mawst L, Botez D, Roth T, Peterson G, Yang J. Diffraction-coupled, phase-locked arrays of antiguided, quantum-well lasers grown by metalorganic chemical vapour deposition Electronics Letters. 24: 958. DOI: 10.1049/El:19880652 |
0.652 |
|
| 1988 |
Mawst L, Botez D, Roth T, Yang J. Diffraction-limited beam operation from quantum-well laser phase-locked array grown by metalorganic chemical vapour deposition Electronics Letters. 24: 570. DOI: 10.1049/el:19880388 |
0.395 |
|
| 1987 |
Mawst L, Givens M, Zmudzinski C, Emanuel M, Coleman J. Optimization and characterization of index-guided visible AlGaAs/GaAs graded barrier quantum well laser diodes Ieee Journal of Quantum Electronics. 23: 696-703. DOI: 10.1109/Jqe.1987.1073423 |
0.693 |
|
| 1987 |
Givens ME, Mawst LJ, Zmudzinski CA, Emanuel MA, Coleman JJ. Effect of compositionally graded and superlattice buffer layers on the device performance of graded barrier quantum well heterostructure laser diodes Applied Physics Letters. 50: 301-303. DOI: 10.1063/1.98231 |
0.561 |
|
| 1986 |
Mawst L, Givens M, Emanuel M, Zmudzinski C, Coleman J. VA-3 Index-guided complementary self-aligned laser arrays by MOCVD Ieee Transactions On Electron Devices. 33: 1857-1857. DOI: 10.1109/T-Ed.1986.22809 |
0.589 |
|
| 1986 |
Zory PS, Reisinger AR, Waters RG, Mawst LJ, Zmudzinski CA, Emanuel MA, Givens ME, Coleman JJ. Anomalous temperature dependence of threshold for thin quantum well AlGaAs diode lasers Applied Physics Letters. 49: 16-18. DOI: 10.1063/1.97086 |
0.788 |
|
| 1986 |
Mawst LJ, Givens ME, Emanuel MA, Zmudzinski CA, Coleman JJ. Phase‐locked shallow mesa graded barrier quantum well laser arrays Applied Physics Letters. 48: 1337-1339. DOI: 10.1063/1.96953 |
0.63 |
|
| 1986 |
Zmudzinski CA, Mawst LJ, Givens ME, Emanuel MA, Coleman JJ. Phase locked narrow zinc diffused stripe laser arrays Applied Physics Letters. 48: 1424-1426. DOI: 10.1063/1.96928 |
0.603 |
|
| 1986 |
Mawst LJ, Givens ME, Emanuel MA, Zmudzinski CA, Coleman JJ. Complementary self‐aligned laser arrays by metalorganic chemical vapor deposition Journal of Applied Physics. 60: 2633-2635. DOI: 10.1063/1.337138 |
0.607 |
|
| 1986 |
Mawst LJ, Givens ME, Zmudzinski CA, Emanuel MA, Coleman JJ. Near‐ and far‐field observations of transient behavior in pulsed graded barrier quantum well lasers Journal of Applied Physics. 60: 2613-2615. DOI: 10.1063/1.337130 |
0.602 |
|
| 1986 |
Zory P, Reisinger A, Mawst L, Costrini G, Zmudzinski C, Emanuel M, Givens M, Coleman J. Anomalous length dependence of threshold for thin quantum well AlGaAs diode lasers Electronics Letters. 22: 475. DOI: 10.1049/El:19860323 |
0.792 |
|
| 1985 |
Mawst L, Costrini G, Zmudzinski C, Givens M, Emanuel M, Coleman J. Complementary self-aligned laser by metalorganic chemical vapour deposition Electronics Letters. 21: 903. DOI: 10.1049/El:19850637 |
0.589 |
|
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