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Jack R. East - Publications

Affiliations: 
University of Michigan, Ann Arbor, Ann Arbor, MI 
Area:
Electronics and Electrical Engineering
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55 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2018 Sarabandi K, Jam A, Vahidpour M, East J. A Novel Frequency Beam-Steering Antenna Array for Submillimeter-Wave Applications Ieee Transactions On Terahertz Science and Technology. 8: 654-665. DOI: 10.1109/Tthz.2018.2866019  0.323
2014 Jam A, Moallem M, East J, Sarabandi K. A non-contact waveguide probe for on-wafer S-parameter measurements for submillimeter-wave to terahertz bandn Ieee Transactions On Terahertz Science and Technology. 4: 515-522. DOI: 10.1109/Tthz.2014.2329311  0.422
2014 Moallem M, East J, Sarabandi K. A broadband, micromachined rectangular waveguide to cavity-backed coplanar waveguide transition using impedance-taper technique Ieee Transactions On Terahertz Science and Technology. 4: 49-55. DOI: 10.1109/Tthz.2013.2293876  0.383
2012 Vahidpour M, Moallem M, East J, Sarabandi K. Micromachined low-mass RF front-end for beam steering radar Proceedings of Spie - the International Society For Optical Engineering. 8373. DOI: 10.1117/12.920797  0.352
2011 Sarabandi K, Vahidpour M, Moallem M, East J. Compact beam scanning 240GHz radar for navigation and collision avoidance Proceedings of Spie - the International Society For Optical Engineering. 8031. DOI: 10.1117/12.884026  0.35
2008 Bi X, East JR, Ravaioli U, Haddad GI. A Monte Carlo study of Si/SiGe MITATT diodes for terahertz power generation Solid-State Electronics. 52: 688-694. DOI: 10.1016/J.Sse.2007.10.035  0.566
2006 Bi X, East JR, Ravaioli U, Haddad GI. Analysis and design of Si terahertz transit-time diodes Solid-State Electronics. 50: 889-896. DOI: 10.1016/J.Sse.2006.04.007  0.619
2004 Lee Y, Becker JP, East JR, Katehi LPB. Fully micromachined finite-ground coplanar line-to-waveguide transitions for W-band applications Ieee Transactions On Microwave Theory and Techniques. 52: 1001-1007. DOI: 10.1109/Tmtt.2004.823580  0.58
2004 Lee Y, East JR, Katehi LPB. High-Efficiency W-Band GaAs Monolithic Frequency Multipliers Ieee Transactions On Microwave Theory and Techniques. 52: 529-535. DOI: 10.1109/Tmtt.2003.821916  0.635
2004 Govindaswamy S, East J, Terry F, Topsakal E, Volakis JL, Haddad GI. Dual-frequency-selective surfaces for near-infrared bandpass filters Microwave and Optical Technology Letters. 43: 95-98. DOI: 10.1002/Mop.20387  0.691
2004 Govindaswamy S, East J, Terry F, Topsakal E, Volakis JL, Haddad GI. Frequency-selective surface based bandpass filters in the near-infrared region Microwave and Optical Technology Letters. 41: 266-269. DOI: 10.1002/Mop.20112  0.681
2004 Lee Y, East JR, Katehi LPB. Micromachined millimeter-wave module for power combining Ieee Mtt-S International Microwave Symposium Digest. 1: 349-352.  0.352
2003 Haddad GI, East JR, Eisele H. Two-terminal active devices for terahertz sources International Journal of High Speed Electronics and Systems. 13: 395-427. DOI: 10.1142/S0129156403001788  0.36
2001 Becker JP, Lee Y, East JR, Katehi LPB. A finite ground coplanar line-to-silicon micromachined waveguide transition Ieee Transactions On Microwave Theory and Techniques. 49: 1671-1676. DOI: 10.1109/22.954770  0.603
2000 Papapolymerou J, East J, Katehi LPB. A high-power W-band monolithic FGC doubler Ieee Microwave and Wireless Components Letters. 10: 195-197. DOI: 10.1109/75.850375  0.423
2000 Borich V, East JR, Haddad GI. Gradient Optimization of RF Amplifiers for Digital Communications International Journal of Rf and Microwave Computer-Aided Engineering. 10: 353-365. DOI: 10.1002/1099-047X(200011)10:6<353::Aid-Mmce4>3.0.Co;2-U  0.692
1999 Liang CP, Long JH, Stark WE, East JR. Nonlinear amplifier effects in communications systems Ieee Transactions On Microwave Theory and Techniques. 47: 1461-1466. DOI: 10.1109/22.780395  0.329
1999 Yang K, Haddad GI, East JR. High-efficiency Class-A power amplifiers with a dual-bias-control scheme Ieee Transactions On Microwave Theory and Techniques. 47: 1426-1432. DOI: 10.1109/22.780390  0.35
1999 Papapolymerou J, Brauchler F, East J, Katehi LPB. VK-band finite ground coplanar monolithic multipliers Ieee Transactions On Microwave Theory and Techniques. 47: 614-619. DOI: 10.1109/22.763163  0.437
1999 Borich V, East J, Haddad G. An efficient fourier transform algorithm for multitone harmonic balance Ieee Transactions On Microwave Theory and Techniques. 47: 182-188. DOI: 10.1109/22.744293  0.691
1998 Papapolymerou J, East J, Katehi LPB. GaAs versus quartz FGC lines for MMIC applications Ieee Transactions On Microwave Theory and Techniques. 46: 1790-1793. DOI: 10.1109/22.734582  0.34
1998 Lin CH, Yang K, Bhattacharya M, Wang X, Zhang X, East JR, Mazumder P, Haddad GI. Monolithically integrated InP-based minority logic gate using an RTD/HBT heterostructure Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 419-422.  0.316
1997 Papapolymerou J, Cheng JC, East J, Katehi LPB. A micromachined high-Q X-B and resonator Ieee Microwave and Guided Wave Letters. 7: 168-170. DOI: 10.1109/75.585207  0.325
1996 Eisenbeiser KW, East JR, Haddad GI. Theoretical analysis of the breakdown voltage in pseudomorphic HFETs Ieee Transactions On Electron Devices. 43: 1778-1787. DOI: 10.1109/16.542421  0.345
1995 Yang K, Cowles JC, East JR, Haddad GI. Theoretical and Experimental DC Characterization of InGaAs-Based Abrupt Emitter HBT's Ieee Transactions On Electron Devices. 42: 1047-1058. DOI: 10.1109/16.387236  0.332
1995 Liao MP, East JR, Haddad GI. Recessed-gate InGaAs MESFETs with an AlAs etch-stop layer Electronics Letters. 31: 684-685. DOI: 10.1049/El:19950415  0.337
1994 Lee TH, Chi CY, East JR, Rebeiz GM, Haddad GI. A Novel Biased Anti-Parallel Schottky Diode Structure for Subharmonic Mixing Ieee Microwave and Guided Wave Letters. 4: 341-343. DOI: 10.1109/75.324710  0.425
1994 Lee TH, Dengler RJ, Rebeiz GM, Siegel PH, East JR, Imran I, Chi CY, Mehdi M, Haddad GI. The Fabrication and Performance of Planar Doped Barrier Diodes as 200 GHz Subharmonically Pumped Mixers Ieee Transactions On Microwave Theory and Techniques. 42: 742-749. DOI: 10.1109/22.285089  0.399
1994 Yang K, East JR, Haddad GI. Numerical Study on the Injection Performance of AlGaAs/GaAs Abrupt Emitter Heterojunction Bipolar Transistors Ieee Transactions On Electron Devices. 41: 138-147. DOI: 10.1109/16.277387  0.363
1994 Chen WL, Munns GO, East JR, Haddad GI. InGaAs/AlAs/InGaAsP resonant tunneling hot electron transistors grown by chemical beam epitaxy Ieee Transactions On Electron Devices. 41: 155-161. DOI: 10.1109/16.277385  0.304
1993 Siegel PH, Mehdi I, Dengler RJ, Oswald JE, Pease A, Crowe TW, Bishop WL, Li Y, Mattauch RJ, Weinreb S, East JR, Lee T. Heterodyne Radiometer Development for the Earth Observing System Microwave Limb Sounder Proceedings of Spie. 1874: 124-137. DOI: 10.1117/12.148054  0.394
1993 Li WQ, Karakucuk M, Freeman PN, East JR, Haddad GI, Bhattacharya PK. High-Speed Al<inf>0.2</inf>Ga<inf>0.8</inf>As/GaAs Multi-Quantum-Well Phototransistors with Tunable Spectral Response Ieee Electron Device Letters. 14: 335-337. DOI: 10.1109/55.225565  0.32
1993 Teeter DA, East JR, Haddad GI. Large-Signal HBT Characterization and Modeling at Millimeter Wave Frequencies Ieee Transactions On Microwave Theory and Techniques. 41: 1087-1093. DOI: 10.1109/22.238532  0.397
1993 Teeter DA, East JR, Mains RK, Haddad GI. Large-Signal Numerical and Analytical HBT Models Ieee Transactions On Electron Devices. 40: 837-845. DOI: 10.1109/16.210188  0.35
1993 Li WQ, Karakucuk M, Kulman J, East JR, Haddad GI, Bhattacharya PK. High frequency GaAs/Al/sub 0.25/Ga/sub 0.75/As heterojunction bipolar transistors with transparent indium-tin-oxide emitter contacts Electronics Letters. 29: 2223-2225. DOI: 10.1049/El:19931493  0.327
1993 Karakuguk M, Li WQ, Freeman PN, East JR, Haddad GI, Bhattacharya PK. A direct optically injection‐locked 2.6‐GHz HBT oscillator Microwave and Optical Technology Letters. 6: 609-611. DOI: 10.1002/Mop.4650061015  0.312
1992 Teeter DA, East JR, Haddad GI. Use of Self Bias to Improve Power Saturation and Intermodulation Distortion in CW Class B HBT Operation Ieee Microwave and Guided Wave Letters. 2: 174-176. DOI: 10.1109/75.134345  0.38
1992 Eisenbeiser KW, East JR, Singh J, Li W, Haddad GI. Breakdown Voltage Improvement in Strained InGaAlAs/GaAs FET's Ieee Electron Device Letters. 13: 421-423. DOI: 10.1109/55.192778  0.307
1992 Sun JP, Mains RK, Chen WL, East JR, Haddad GI. C-V and I-V characteristics of quantum well varactors Journal of Applied Physics. 72: 2340-2346. DOI: 10.1063/1.352322  0.306
1992 Livernols TG, East JR. Analysis of a microstrip step discontinuity fabricated on a metal‐insulator‐semiconductor (MIS) substrate Microwave and Optical Technology Letters. 5: 661-666. DOI: 10.1002/Mop.4650051303  0.3
1991 Siegel PH, Mehdi I, East J. Improved millimeter-wave mixer performance analysis at cryogenic temperatures Ieee Microwave and Guided Wave Letters. 1: 129-131. DOI: 10.1109/75.91088  0.334
1991 East JR, Haddad GI. Characterization of Resonant Tunneling Diodes for Microwave and Millimeter-Wave Detection Ieee Transactions On Microwave Theory and Techniques. 39: 1876-1880. DOI: 10.1109/22.97489  0.391
1991 Teeter DA, East JR, Mains RK, Haddad GI. A comparison between the heterojunction bipolar transistor power performance computed using large signal “Y” parameters and a full time domain simulation Compel - the International Journal For Computation and Mathematics in Electrical and Electronic Engineering. 10: 301-309. DOI: 10.1108/Eb051707  0.385
1991 Kidner C, Mehdi I, East JR, Haddad GI. Bias circuit instabilities and their effect on the d.c. current-voltage characteristics of double-barrier resonant tunneling diodes Solid State Electronics. 34: 149-156. DOI: 10.1016/0038-1101(91)90081-9  0.358
1991 Lee TH, East JR, Haddad GI. Planar doped barrier devices for subharmonic mixers Microwave and Optical Technology Letters. 4: 53-60. DOI: 10.1002/Mop.4650040115  0.414
1991 Haddad GI, East JR, Kidner C. Tunnel transit‐time (tunnett) devices for terahertz sources Microwave and Optical Technology Letters. 4: 23-29. DOI: 10.1002/Mop.4650040109  0.368
1990 Kidner C, Mehdi I, East JR, Haddad GI. Power and Stability Limitations of Resonant Tunneling Diodes Ieee Transactions On Microwave Theory and Techniques. 38: 864-872. DOI: 10.1109/22.55778  0.424
1990 Mehdi I, Kidner C, East JR, Haddad GI. Millimeter‐wave detection using resonant tunnelling diodes Microwave and Optical Technology Letters. 3: 1-4. DOI: 10.1002/Mop.4650030102  0.325
1989 Crandle TL, East JR, Blakey PA. Monte Carlo modeling of electron transport in repeated overshoot structures Ieee Transactions On Electron Devices. 36: 300-308. DOI: 10.1109/16.19929  0.31
1989 Haddad GI, Mains RK, Reddy UK, East JR. A proposed narrow-band-gap base transistor structure Superlattices and Microstructures. 5: 437-441. DOI: 10.1016/0749-6036(89)90329-7  0.34
1989 Sandborn PA, East JR, Haddad GI. Diffusion effects in short-channel GaAs MESFETs Solid State Electronics. 32: 191-198. DOI: 10.1016/0038-1101(89)90091-9  0.302
1987 Dogan NS, East JR, Elta ME, Haddad GI. Millimeter-wave heterojunction MITATT diodes Ieee Transactions On Microwave Theory and Techniques. 35: 1308-1315. DOI: 10.1109/TMTT.1987.1133853  0.684
1987 Sandborn PA, East JR, Haddad GI. Quasi-two-dimensional modeling of gaas mesfet’s Ieee Transactions On Electron Devices. 34: 985-991. DOI: 10.1109/T-Ed.1987.23034  0.301
1987 Dogan NS, East JR, Elta ME, Haddad GI. MILLIMETER WAVE HETEROJUNCTION MITATT DIODES Ieee Mtt-S International Microwave Symposium Digest. 973-976.  0.682
1983 Blakey PA, East JR, Elta ME, Haddad GI. IMPLICATIONS OF VELOCITY OVERSHOOT IN HETEROJUNCTION TRANSIT-TIME DIODES Electronics Letters. 19: 510-512. DOI: 10.1049/El:19830347  0.33
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