Year |
Citation |
Score |
2020 |
Bhat A, Elleuch O, Cui X, Guan Y, Scott S, Kuech TF, Lagally MG. High-Ge-Content SiGe Alloy Single Crystals Using the Nanomembrane Platform. Acs Applied Materials & Interfaces. PMID 32282183 DOI: 10.1021/Acsami.0C02747 |
0.382 |
|
2020 |
Jaffe GR, Smith KJ, Brar VW, Lagally MG, Eriksson MA. Three-omega thermal-conductivity measurements with curved heater geometries Applied Physics Letters. 117: 073102. DOI: 10.1063/5.0011627 |
0.338 |
|
2020 |
Neyens SF, Foote RH, Thorgrimsson B, Knapp TJ, McJunkin T, Vandersypen LMK, Amin P, Thomas NK, Clarke JS, Savage DE, Lagally MG, Friesen M, Coppersmith SN, Eriksson MA. Erratum: “The critical role of substrate disorder in valley splitting in Si quantum wells” [Appl. Phys. Lett. 112, 243107 (2018)] Applied Physics Letters. 116: 049901. DOI: 10.1063/1.5144986 |
0.38 |
|
2019 |
Jacobberger RM, Murray EA, Fortin-Deschênes M, Göltl F, Behn WA, Krebs ZJ, Levesque PL, Savage DE, Smoot C, Lagally MG, Desjardins P, Martel R, Brar V, Moutanabbir O, Mavrikakis M, et al. Alignment of semiconducting graphene nanoribbons on vicinal Ge(001). Nanoscale. PMID 30821309 DOI: 10.1039/C9Nr00713J |
0.339 |
|
2019 |
Jaffe GR, Mei S, Boyle CA, Kirch JD, Savage DE, Botez D, Mawst LJ, Knezevic I, Lagally MG, Eriksson MA. Measurements of the Thermal Resistivity of InAlAs, InGaAs and InAlAs/InGaAs Superlattices. Acs Applied Materials & Interfaces. PMID 30807087 DOI: 10.1021/Acsami.8B17268 |
0.327 |
|
2019 |
Liu F, Wu F, Lagally MG. Effect of Strain on Structure and Morphology of Ultrathin Ge Films on Si(001). Chemical Reviews. 97: 1045-1062. PMID 11851440 DOI: 10.1021/Cr9600722 |
0.484 |
|
2019 |
Li A, Liu F, Lagally MG. Equilibrium shape of two-dimensional islands under stress Physical Review Letters. 85: 1922-5. PMID 10970648 DOI: 10.1103/Physrevlett.85.1922 |
0.341 |
|
2019 |
Liu F, Lagally MG. Interplay of stress, structure, and stoichiometry in Ge-covered Si(001). Physical Review Letters. 76: 3156-3159. PMID 10060889 DOI: 10.1103/Physrevlett.76.3156 |
0.388 |
|
2019 |
Wu F, Lagally MG. Ge-induced reversal of surface stress anisotropy on Si(001). Physical Review Letters. 75: 2534-2537. PMID 10059336 DOI: 10.1103/Physrevlett.75.2534 |
0.401 |
|
2019 |
Wu F, Chen X, Zhang Z, Lagally M. Reversal of Step Roughness on Ge-Covered Vicinal Si(001). Physical Review Letters. 74: 574-577. PMID 10058792 DOI: 10.1103/Physrevlett.74.574 |
0.445 |
|
2019 |
Chen X, Wu F, Zhang Z, Lagally MG. Vacancy-vacancy interaction on Ge-covered Si(001). Physical Review Letters. 73: 850-853. PMID 10057555 DOI: 10.1103/Physrevlett.73.850 |
0.409 |
|
2019 |
Zhang Z, Chen H, Bolding BC, Lagally MG. Vacancy diffusion on Si(100)-(2 x 1). Physical Review Letters. 71: 3677-3680. PMID 10055044 DOI: 10.1103/Physrevlett.71.3677 |
0.355 |
|
2019 |
Ritz C, Flack F, Savage D, Detert D, Evans P, Lagally M, Cai Z. Ordered Lattices of Quantum Dots on Ultrathin SOI Nanomembranes Ecs Transactions. 6: 321-326. DOI: 10.1149/1.2728877 |
0.772 |
|
2019 |
Xue X, Watson T, Helsen J, Ward D, Savage D, Lagally M, Coppersmith S, Eriksson M, Wehner S, Vandersypen L. Benchmarking Gate Fidelities in a
Si/SiGe
Two-Qubit Device Physical Review X. 9. DOI: 10.1103/Physrevx.9.021011 |
0.313 |
|
2018 |
Paiella R, Lagally MG. Optical Properties of Tensilely Strained Ge Nanomembranes. Nanomaterials (Basel, Switzerland). 8. PMID 29882799 DOI: 10.3390/Nano8060407 |
0.45 |
|
2018 |
Abadillo-Uriel JC, Thorgrimsson B, Kim D, Smith LW, Simmons CB, Ward DR, Foote RH, Corrigan J, Savage DE, Lagally MG, Calderón MJ, Coppersmith SN, Eriksson MA, Friesen M. Signatures of atomic-scale structure in the energy dispersion and coherence of a Si quantum-dot qubit Physical Review B. 98. DOI: 10.1103/Physrevb.98.165438 |
0.348 |
|
2018 |
Peng W, Zamiri M, Scott SA, Cavallo F, Endres JJ, Knezevic I, Eriksson MA, Lagally MG. Electronic Transport in Hydrogen-Terminated Si(001) Nanomembranes Physical Review Applied. 9. DOI: 10.1103/Physrevapplied.9.024037 |
0.355 |
|
2018 |
Wang X, Cui X, Bhat A, Savage DE, Reno JL, Lagally MG, Paiella R. Ultrawide strain-tuning of light emission from InGaAs nanomembranes Applied Physics Letters. 113: 201105. DOI: 10.1063/1.5055869 |
0.333 |
|
2018 |
Neyens SF, Foote RH, Thorgrimsson B, Knapp TJ, McJunkin T, Vandersypen LMK, Amin P, Thomas NK, Clarke JS, Savage DE, Lagally MG, Friesen M, Coppersmith SN, Eriksson MA. The critical role of substrate disorder in valley splitting in Si quantum wells Applied Physics Letters. 112: 243107. DOI: 10.1063/1.5033447 |
0.396 |
|
2018 |
Ferdous R, Kawakami E, Scarlino P, Nowak MP, Ward DR, Savage DE, Lagally MG, Coppersmith SN, Friesen M, Eriksson MA, Vandersypen LMK, Rahman R. Valley dependent anisotropic spin splitting in silicon quantum dots Npj Quantum Information. 4: 26. DOI: 10.1038/S41534-018-0075-1 |
0.32 |
|
2018 |
Guo Q, Di Z, Lagally MG, Mei Y. Strain engineering and mechanical assembly of silicon/germanium nanomembranes Materials Science and Engineering: R: Reports. 128: 1-31. DOI: 10.1016/J.Mser.2018.02.002 |
0.44 |
|
2017 |
Scott S, Deneke C, Paskiewicz DM, Ryu HJ, Malachias A, Baunack S, Schmidt OG, Savage DE, Eriksson MA, Lagally MG. Silicon Nanomembranes with Hybrid Crystal Orientations and Strain States. Acs Applied Materials & Interfaces. PMID 29129058 DOI: 10.1021/Acsami.7B14291 |
0.797 |
|
2017 |
Chen Y, Yusuf MH, Guan Y, Jacobson RB, Lagally MG, Babcock SE, Kuech TF, Evans PG. Distinct nucleation and growth kinetics of amorphous SrTiO3 on (001) SrTiO3 and SiO2/Si: A step towards new architectures. Acs Applied Materials & Interfaces. PMID 29094920 DOI: 10.1021/Acsami.7B12978 |
0.393 |
|
2017 |
Rojas Delgado R, Jacobberger RM, Roy SS, Mangu VS, Arnold MS, Cavallo F, Lagally MG. Passivation of Germanium by Graphene. Acs Applied Materials & Interfaces. PMID 28474879 DOI: 10.1021/Acsami.7B03889 |
0.303 |
|
2016 |
Kawakami E, Jullien T, Scarlino P, Ward DR, Savage DE, Lagally MG, Dobrovitski VV, Friesen M, Coppersmith SN, Eriksson MA, Vandersypen LM. Gate fidelity and coherence of an electron spin in an Si/SiGe quantum dot with micromagnet. Proceedings of the National Academy of Sciences of the United States of America. PMID 27698123 DOI: 10.1073/Pnas.1603251113 |
0.307 |
|
2016 |
Knapp TJ, Mohr RT, Li YS, Thorgrimsson B, Foote RH, Wu X, Ward DR, Savage DE, Lagally MG, Friesen M, Coppersmith SN, Eriksson MA. Characterization of a gate-defined double quantum dot in a Si/SiGe nanomembrane. Nanotechnology. 27: 154002. PMID 26938505 DOI: 10.1088/0957-4484/27/15/154002 |
0.43 |
|
2016 |
McElhinny KM, Gopalakrishnan G, Savage DE, Czaplewski DA, Lagally MG, Holt MV, Evans PG. Synchrotron x-ray thermal diffuse scattering probes for phonons in Si/SiGe/Si trilayer nanomembranes Mrs Advances. 1: 3263-3268. DOI: 10.1557/Adv.2016.352 |
0.414 |
|
2016 |
Grierson DS, Flack FS, Lagally MG, Turner KT. Rolling-based direct-transfer printing: A process for large-area transfer of micro- and nanostructures onto flexible substrates Journal of Applied Physics. 120. DOI: 10.1063/1.4961407 |
0.306 |
|
2016 |
Yin J, Cui X, Wang X, Sookchoo P, Lagally MG, Paiella R. Flexible nanomembrane photonic-crystal cavities for tensilely strained-germanium light emission Applied Physics Letters. 108. DOI: 10.1063/1.4954188 |
0.401 |
|
2016 |
Park J, Ahn Y, Tilka JA, Sampson KC, Savage DE, Prance JR, Simmons CB, Lagally MG, Coppersmith SN, Eriksson MA, Holt MV, Evans PG. Electrode-stress-induced nanoscale disorder in Si quantum electronic devices Apl Materials. 4. DOI: 10.1063/1.4954054 |
0.408 |
|
2016 |
Durmaz H, Sookchoo P, Cui X, Jacobson R, Savage DE, Lagally MG, Paiella R. SiGe Nanomembrane Quantum-Well Infrared Photodetectors Acs Photonics. 3: 1978-1985. DOI: 10.1021/Acsphotonics.6B00524 |
0.464 |
|
2015 |
Scarlino P, Kawakami E, Ward DR, Savage DE, Lagally MG, Friesen M, Coppersmith SN, Eriksson MA, Vandersypen LM. Second-Harmonic Coherent Driving of a Spin Qubit in a Si/SiGe Quantum Dot. Physical Review Letters. 115: 106802. PMID 26382693 DOI: 10.1103/Physrevlett.115.106802 |
0.3 |
|
2015 |
Jacobberger RM, Kiraly B, Fortin-Deschenes M, Levesque PL, McElhinny KM, Brady GJ, Rojas Delgado R, Singha Roy S, Mannix A, Lagally MG, Evans PG, Desjardins P, Martel R, Hersam MC, Guisinger NP, et al. Direct oriented growth of armchair graphene nanoribbons on germanium. Nature Communications. 6: 8006. PMID 26258594 DOI: 10.1038/Ncomms9006 |
0.321 |
|
2015 |
Li YS, Sookchoo P, Cui X, Mohr R, Savage DE, Foote RH, Jacobson RB, Sánchez-Pérez JR, Paskiewicz DM, Wu X, Ward DR, Coppersmith SN, Eriksson MA, Lagally MG. Electronic Transport Properties of Epitaxial Si/SiGe Heterostructures Grown on Single-Crystal SiGe Nanomembranes. Acs Nano. 9: 4891-9. PMID 25932940 DOI: 10.1021/Nn506475Z |
0.793 |
|
2015 |
McElhinny KM, Gopalakrishnan G, Savage DE, Silva-Martínez JC, Lagally MG, Holt MV, Evans PG. Fabrication of flat SiGe heterostructure nanomembrane windows via strain-relief patterning Journal of Physics D: Applied Physics. 48. DOI: 10.1088/0022-3727/48/1/015306 |
0.484 |
|
2015 |
Marçal LAB, Richard MI, Magalhães-Paniago R, Cavallo F, Lagally MG, Schmidt OG, Schülli T, Deneke C, Malachias A. Direct evidence of strain transfer for InAs island growth on compliant Si substrates Applied Physics Letters. 106. DOI: 10.1063/1.4918615 |
0.482 |
|
2015 |
Kim D, Ward DR, Simmons CB, Savage DE, Lagally MG, Friesen M, Coppersmith SN, Eriksson MA. High-fidelity resonant gating of a silicon-based quantum dot hybrid qubit Npj Quantum Information. 1. DOI: 10.1038/Npjqi.2015.4 |
0.307 |
|
2015 |
Durmaz H, Sookchoo P, Sudradjat FF, Kiefer AM, Lagally MG, Paiella R. SiGe nanomembrane active materials for far-infrared intersubband devices Integrated Photonics Research, Silicon and Nanophotonics, Iprsn 2015. 371p. |
0.66 |
|
2014 |
Cavallo F, Huang Y, Dent EW, Williams JC, Lagally MG. Neurite guidance and three-dimensional confinement via compliant semiconductor scaffolds. Acs Nano. 8: 12219-27. PMID 25479558 DOI: 10.1021/Nn503989C |
0.302 |
|
2014 |
Cavallo F, Rojas Delgado R, Kelly MM, Sánchez Pérez JR, Schroeder DP, Xing HG, Eriksson MA, Lagally MG. Exceptional charge transport properties of graphene on germanium. Acs Nano. 8: 10237-45. PMID 25203974 DOI: 10.1021/Nn503381M |
0.745 |
|
2014 |
Kawakami E, Scarlino P, Ward DR, Braakman FR, Savage DE, Lagally MG, Friesen M, Coppersmith SN, Eriksson MA, Vandersypen LM. Electrical control of a long-lived spin qubit in a Si/SiGe quantum dot. Nature Nanotechnology. 9: 666-70. PMID 25108810 DOI: 10.1038/Nnano.2014.153 |
0.302 |
|
2014 |
Boztug C, Sánchez-Pérez JR, Cavallo F, Lagally MG, Paiella R. Strained-germanium nanostructures for infrared photonics. Acs Nano. 8: 3136-51. PMID 24597822 DOI: 10.1021/Nn404739B |
0.406 |
|
2014 |
Paskiewicz DM, Savage DE, Holt MV, Evans PG, Lagally MG. Nanomembrane-based materials for Group IV semiconductor quantum electronics. Scientific Reports. 4: 4218. PMID 24573089 DOI: 10.1038/Srep04218 |
0.799 |
|
2014 |
Paiella R, Boztug C, Sánchez-Pérez J, Yin J, Lagally MG. Tensilely strained germanium nanomembranes for direct-bandgap infrared light emission Proceedings of Spie - the International Society For Optical Engineering. 9162. DOI: 10.1117/12.2063293 |
0.404 |
|
2014 |
Euaruksakul C, Kelly MM, Yang B, Savage DE, Celler GK, Lagally MG. Heteroepitaxial growth on thin sheets and bulk material: Exploring differences in strain relaxation via low-energy electron microscopy Journal of Physics D: Applied Physics. 47. DOI: 10.1088/0022-3727/47/2/025305 |
0.794 |
|
2014 |
Clausen AM, Paskiewicz DM, Sadeghirad A, Jakes J, Savage DE, Stone DS, Liu F, Lagally MG. Silicon nanomembranes as a means to evaluate stress evolution in deposited thin films Extreme Mechanics Letters. 1: 9-16. DOI: 10.1016/J.Eml.2014.12.003 |
0.805 |
|
2014 |
Cavallo F, Turner KT, Lagally MG. Facile fabrication of ordered crystalline-semiconductor microstructures on compliant substrates Advanced Functional Materials. 24: 1730-1737. DOI: 10.1002/Adfm.201303165 |
0.38 |
|
2013 |
Zhou M, Liu Z, Wang Z, Bai Z, Feng Y, Lagally MG, Liu F. Strain-engineered surface transport in Si(001): complete isolation of the surface state via tensile strain. Physical Review Letters. 111: 246801. PMID 24483685 DOI: 10.1103/Physrevlett.111.246801 |
0.432 |
|
2013 |
Larson BJ, Gillmor SD, Braun JM, Cruz-Barba LE, Savage DE, Denes FS, Lagally MG. Long-term reduction in poly(dimethylsiloxane) surface hydrophobicity via cold-plasma treatments. Langmuir : the Acs Journal of Surfaces and Colloids. 29: 12990-6. PMID 24063604 DOI: 10.1021/La403077Q |
0.71 |
|
2013 |
Zhou H, Seo JH, Paskiewicz DM, Zhu Y, Celler GK, Voyles PM, Zhou W, Lagally MG, Ma Z. Fast flexible electronics with strained silicon nanomembranes. Scientific Reports. 3: 1291. PMID 23416347 DOI: 10.1038/Srep01291 |
0.795 |
|
2013 |
Sookchoo P, Sudradjat FF, Kiefer AM, Durmaz H, Paiella R, Lagally MG. Strain engineered SiGe multiple-quantum-well nanomembranes for far-infrared intersubband device applications. Acs Nano. 7: 2326-34. PMID 23402572 DOI: 10.1021/Nn305528T |
0.777 |
|
2013 |
Peng W, Aksamija Z, Scott SA, Endres JJ, Savage DE, Knezevic I, Eriksson MA, Lagally MG. Probing the electronic structure at semiconductor surfaces using charge transport in nanomembranes. Nature Communications. 4: 1339. PMID 23299889 DOI: 10.1038/Ncomms2350 |
0.345 |
|
2013 |
Boztug C, Sánchez-Pérez JR, Sudradjat FF, Jacobson RB, Paskiewicz DM, Lagally MG, Paiella R. Tensilely strained germanium nanomembranes as infrared optical gain media. Small (Weinheim An Der Bergstrasse, Germany). 9: 622-30. PMID 23125175 DOI: 10.1002/Smll.201201090 |
0.764 |
|
2013 |
Seo JH, Zhou H, Paskiewicz DM, Lagally MG, Zhou W, Ma Z. 15-GHz flexible microwave thin-film transistors on plastic Ieee Mtt-S International Microwave Symposium Digest. DOI: 10.1109/MWSYM.2013.6697709 |
0.768 |
|
2013 |
Shi Z, Simmons CB, Ward DR, Prance JR, Mohr RT, Koh TS, Gamble JK, Wu X, Savage DE, Lagally MG, Friesen M, Coppersmith SN, Eriksson MA. Coherent quantum oscillations and echo measurements of a Si charge qubit Physical Review B - Condensed Matter and Materials Physics. 88. DOI: 10.1103/Physrevb.88.075416 |
0.307 |
|
2013 |
Boztug C, Sánchez-Pérez JR, Yin J, Lagally MG, Paiella R. Grating-coupled mid-infrared light emission from tensilely strained germanium nanomembranes Applied Physics Letters. 103. DOI: 10.1063/1.4830377 |
0.373 |
|
2013 |
Sudradjat FF, Sookchoo P, Durmaz H, Kiefer AM, Lagally MG, Paiellaa R. Strain-engineered SiGe quantum-well nanomembranes for far-infrared intersubband device applications Cleo: Science and Innovations, Cleo_si 2013. |
0.736 |
|
2013 |
Boztug C, Sánchez Pérez JR, Yin J, Sudradjat FF, Paskiewicz DM, Jacobson RB, Lagally MG, Paiella R. Grating-coupled strain-enhanced light emission from mechanically stressed Germanium nanomembranes Cleo: Science and Innovations, Cleo_si 2013. |
0.752 |
|
2013 |
Sudradjat FF, Sookchoo P, Durmaz H, Kiefer AM, Lagally MG, Paiellaa R. Strain-engineered SiGe quantum-well nanomembranes for far-infrared intersubband device applications Cleo: Science and Innovations, Cleo_si 2013. CW1O.5. |
0.701 |
|
2012 |
Cavallo F, Lagally MG. Semiconductor nanomembranes: a platform for new properties via strain engineering. Nanoscale Research Letters. 7: 628. PMID 23153167 DOI: 10.1186/1556-276X-7-628 |
0.474 |
|
2012 |
Deneke C, Malachias A, Rastelli A, Merces L, Huang M, Cavallo F, Schmidt OG, Lagally MG. Straining nanomembranes via highly mismatched heteroepitaxial growth: InAs islands on compliant Si substrates. Acs Nano. 6: 10287-95. PMID 23046451 DOI: 10.1021/Nn304151J |
0.437 |
|
2012 |
Evans PG, Savage DE, Prance JR, Simmons CB, Lagally MG, Coppersmith SN, Eriksson MA, Schülli TU. Nanoscale distortions of Si quantum wells in Si/SiGe quantum-electronic heterostructures. Advanced Materials (Deerfield Beach, Fla.). 24: 5217-21. PMID 22806921 DOI: 10.1002/Adma.201201833 |
0.413 |
|
2012 |
Prance JR, Shi Z, Simmons CB, Savage DE, Lagally MG, Schreiber LR, Vandersypen LM, Friesen M, Joynt R, Coppersmith SN, Eriksson MA. Single-shot measurement of triplet-singlet relaxation in a Si/SiGe double quantum dot. Physical Review Letters. 108: 046808. PMID 22400879 DOI: 10.1103/Physrevlett.108.046808 |
0.306 |
|
2012 |
Paskiewicz DM, Tanto B, Savage DE, Evans PG, Eriksson MA, Lagally MG. Single-crystalline elastically relaxed SiGe nanomembranes: Substrates for epitaxial growth of defect-free strained-Si/SiGe heterostructures 2012 International Silicon-Germanium Technology and Device Meeting, Istdm 2012 - Proceedings. 28-29. DOI: 10.1109/ISTDM.2012.6222441 |
0.83 |
|
2011 |
Wu D, Lagally MG, Liu F. Stabilizing graphitic thin films of wurtzite materials by epitaxial strain. Physical Review Letters. 107: 236101. PMID 22182104 DOI: 10.1103/Physrevlett.107.236101 |
0.357 |
|
2011 |
Sánchez-Pérez JR, Boztug C, Chen F, Sudradjat FF, Paskiewicz DM, Jacobson RB, Lagally MG, Paiella R. Direct-bandgap light-emitting germanium in tensilely strained nanomembranes. Proceedings of the National Academy of Sciences of the United States of America. 108: 18893-8. PMID 22084063 DOI: 10.1073/Pnas.1107968108 |
0.764 |
|
2011 |
Rogers JA, Lagally MG, Nuzzo RG. Synthesis, assembly and applications of semiconductor nanomembranes. Nature. 477: 45-53. PMID 21886156 DOI: 10.1038/Nature10381 |
0.312 |
|
2011 |
Oehrlein SM, Sanchez-Perez JR, Jacobson R, Flack FS, Kershner RJ, Lagally MG. Translation and manipulation of silicon nanomembranes using holographic optical tweezers. Nanoscale Research Letters. 6: 507. PMID 21867504 DOI: 10.1186/1556-276X-6-507 |
0.373 |
|
2011 |
Chen F, Jiang H, Kiefer AM, Clausen AM, Ting YH, Wendt AE, Ding B, Lagally MG. Fabrication of ultrahigh-density nanowires by electrochemical nanolithography. Nanoscale Research Letters. 6: 444. PMID 21745363 DOI: 10.1186/1556-276X-6-444 |
0.801 |
|
2011 |
Zhao X, Scott SA, Huang M, Peng W, Kiefer AM, Flack FS, Savage DE, Lagally MG. Influence of surface properties on the electrical conductivity of silicon nanomembranes. Nanoscale Research Letters. 6: 402. PMID 21711931 DOI: 10.1186/1556-276X-6-402 |
0.726 |
|
2011 |
Paskiewicz DM, Scott SA, Savage DE, Celler GK, Lagally MG. Symmetry in strain engineering of nanomembranes: making new strained materials. Acs Nano. 5: 5532-42. PMID 21682324 DOI: 10.1021/Nn2009672 |
0.766 |
|
2011 |
Paskiewicz DM, Tanto B, Savage DE, Lagally MG. Defect-free single-crystal SiGe: a new material from nanomembrane strain engineering. Acs Nano. 5: 5814-22. PMID 21650206 DOI: 10.1021/Nn201547K |
0.826 |
|
2011 |
Cavallo F, Grierson DS, Turner KT, Lagally MG. "Soft Si": effective stiffness of supported crystalline nanomembranes. Acs Nano. 5: 5400-7. PMID 21644543 DOI: 10.1021/Nn200461G |
0.359 |
|
2011 |
Yu M, Huang Y, Ballweg J, Shin H, Huang M, Savage DE, Lagally MG, Dent EW, Blick RH, Williams JC. Semiconductor nanomembrane tubes: three-dimensional confinement for controlled neurite outgrowth. Acs Nano. 5: 2447-57. PMID 21366271 DOI: 10.1021/Nn103618D |
0.311 |
|
2011 |
Kiefer AM, Paskiewicz DM, Clausen AM, Buchwald WR, Soref RA, Lagally MG. Si/Ge junctions formed by nanomembrane bonding. Acs Nano. 5: 1179-89. PMID 21247201 DOI: 10.1021/Nn103149C |
0.809 |
|
2011 |
Lee CH, Ritz CS, Huang M, Ziwisky MW, Blise RJ, Lagally MG. Integrated freestanding single-crystal silicon nanowires: conductivity and surface treatment. Nanotechnology. 22: 055704. PMID 21178224 DOI: 10.1088/0957-4484/22/5/055704 |
0.822 |
|
2011 |
Huang M, Cavallo F, Liu F, Lagally MG. Nanomechanical architecture of semiconductor nanomembranes. Nanoscale. 3: 96-120. PMID 21031195 DOI: 10.1039/C0Nr00648C |
0.332 |
|
2011 |
Zhao XF, Han P, Scott S, Lagally MG. Influence of Surface and Interface Properties on the Electrical Conductivity of Silicon Nanomembranes Advanced Materials Research. 7220-7223. DOI: 10.4028/Www.Scientific.Net/Amr.383-390.7220 |
0.328 |
|
2011 |
Lagally MG, Kiefer AM, Paskiewicz DM, Cavallo F, Scott SA, Ma ZQ, Savage DE. Semiconductor nanomembranes: A platform for new science and technology Proceedings of Spie - the International Society For Optical Engineering. 8031. DOI: 10.1117/12.884810 |
0.789 |
|
2011 |
Yu M, Huang M, Savage DE, Lagally MG, Blick RH. Local-wetting-induced deformation of rolled-up Si/Si-Ge nanomembranes: A potential route for remote chemical sensing Ieee Transactions On Nanotechnology. 10: 21-25. DOI: 10.1109/Tnano.2010.2066986 |
0.481 |
|
2011 |
Thalakulam M, Simmons CB, Van Bael BJ, Rosemeyer BM, Savage DE, Lagally MG, Friesen M, Coppersmith SN, Eriksson MA. Single-shot measurement and tunnel-rate spectroscopy of a Si/SiGe few-electron quantum dot Physical Review B - Condensed Matter and Materials Physics. 84. DOI: 10.1103/Physrevb.84.045307 |
0.341 |
|
2011 |
Chen F, Euaruksakul C, Liu Z, Himpsel FJ, Liu F, Lagally MG. Conduction band structure and electron mobility in uniaxially strained Si via externally applied strain in nanomembranes Journal of Physics D: Applied Physics. 44. DOI: 10.1088/0022-3727/44/32/325107 |
0.764 |
|
2011 |
Shi Z, Simmons CB, Prance JR, King Gamble J, Friesen M, Savage DE, Lagally MG, Coppersmith SN, Eriksson MA. Tunable singlet-triplet splitting in a few-electron Si/SiGe quantum dot Applied Physics Letters. 99. DOI: 10.1063/1.3666232 |
0.327 |
|
2011 |
Boztug C, Chen F, Sanchez-Perez JR, Sudradjat FF, Paskiewicz DM, Jacobson RB, Lagally MG, Paiella R. Direct-bandgap germanium active layers pumped above transparency based on tensilely strained nanomembranes Optics Infobase Conference Papers. |
0.729 |
|
2010 |
Ryu HJ, Aksamija Z, Paskiewicz DM, Scott SA, Lagally MG, Knezevic I, Eriksson MA. Quantitative determination of contributions to the thermoelectric power factor in Si nanostructures. Physical Review Letters. 105: 256601. PMID 21231606 DOI: 10.1103/Physrevlett.105.256601 |
0.747 |
|
2010 |
Liu Z, Wu J, Duan W, Lagally MG, Liu F. Electronic phase diagram of single-element silicon "strain" superlattices. Physical Review Letters. 105: 016802. PMID 20867470 DOI: 10.1103/Physrevlett.105.016802 |
0.451 |
|
2010 |
Chen F, Ramayya EB, Euaruksakul C, Himpsel FJ, Celler GK, Ding B, Knezevic I, Lagally MG. Quantum confinement, surface roughness, and the conduction band structure of ultrathin silicon membranes. Acs Nano. 4: 2466-74. PMID 20302337 DOI: 10.1021/Nn100275Z |
0.759 |
|
2010 |
Salling CT, Lagally MG. Fabrication of atomic-scale structures on si(001) surfaces. Science (New York, N.Y.). 265: 502-6. PMID 17781309 DOI: 10.1126/Science.265.5171.502 |
0.361 |
|
2010 |
Paskiewicz DM, Scott SA, Savage DE, Lagally MG. Elastically strain-sharing Si(110) nanomembranes Ecs Transactions. 33: 813-821. DOI: 10.1149/1.3487611 |
0.777 |
|
2010 |
Cavallo F, Paskiewicz DM, Scott SA, Huang MH, Lagally MG. Group IV nanomembranes and nanoepitaxy: New properties via local and global strain engineering Proceedings of Spie - the International Society For Optical Engineering. 7768. DOI: 10.1117/12.861592 |
0.777 |
|
2010 |
Seo S, Euaruksakul C, Savage DE, Lagally MG, Evans PG. Nanostructure formation in the initial roughening of a thin silicon sheet Physical Review B - Condensed Matter and Materials Physics. 81. DOI: 10.1103/Physrevb.81.041302 |
0.78 |
|
2010 |
Ritz CS, Kim-Lee HJ, Detert DM, Kelly MM, Flack FS, Savage DE, Cai Z, Evans PG, Turner KT, Lagally MG. Ordering of nanostressors on free-standing silicon nanomembranes and nanoribbons New Journal of Physics. 12. DOI: 10.1088/1367-2630/12/10/103011 |
0.811 |
|
2010 |
Lagally MG. Nanoepitaxy in the presence of lattice strain: Quantum dots and strain engineering of nanomembranes in the silicon model system Aip Conference Proceedings. 1270: 316-323. DOI: 10.1063/1.3476234 |
0.302 |
|
2010 |
Thalakulam M, Simmons CB, Rosemeyer BM, Savage DE, Lagally MG, Friesen M, Coppersmith SN, Eriksson MA. Fast tunnel rates in Si/SiGe one-electron single and double quantum dots Applied Physics Letters. 96. DOI: 10.1063/1.3425892 |
0.361 |
|
2010 |
Zhang Y, Yu M, Savage DE, Lagally MG, Blick RH, Liu F. Effect of surface bonding on semiconductor nanoribbon wiggling structure Applied Physics Letters. 96. DOI: 10.1063/1.3353972 |
0.386 |
|
2010 |
Cavallo F, Lagally MG. Semiconductors turn soft: Inorganic nanomembranes Soft Matter. 6: 439-455. DOI: 10.1039/B916582G |
0.391 |
|
2009 |
Kim-Lee HJ, Savage DE, Ritz CS, Lagally MG, Turner KT. Control of three-dimensional island growth with mechanically responsive single-crystal nanomembrane substrates. Physical Review Letters. 102: 226103. PMID 19658881 DOI: 10.1103/PhysRevLett.102.226103 |
0.818 |
|
2009 |
Simmons CB, Thalakulam M, Rosemeyer BM, Van Bael BJ, Sackmann EK, Savage DE, Lagally MG, Joynt R, Friesen M, Coppersmith SN, Eriksson MA. Charge sensing and controllable tunnel coupling in a Si/SiGe double quantum dot. Nano Letters. 9: 3234-8. PMID 19645459 DOI: 10.1021/Nl9014974 |
0.315 |
|
2009 |
Scott SA, Peng W, Kiefer AM, Jiang H, Knezevic I, Savage DE, Eriksson MA, Lagally MG. Influence of surface chemical modification on charge transport properties in ultrathin silicon membranes. Acs Nano. 3: 1683-92. PMID 19499933 DOI: 10.1021/Nn9000947 |
0.739 |
|
2009 |
Huang M, Ritz CS, Novakovic B, Yu D, Zhang Y, Flack F, Savage DE, Evans PG, Knezevic I, Liu F, Lagally MG. Mechano-electronic superlattices in silicon nanoribbons. Acs Nano. 3: 721-7. PMID 19209871 DOI: 10.1021/Nn8008883 |
0.833 |
|
2009 |
Liu F, Lagally MG, Zang J. Nanomechanical Architectures - Mechanics-Driven fabrication based on crystalline membranes Mrs Bulletin. 34: 190-195. DOI: 10.1557/Mrs2009.51 |
0.309 |
|
2009 |
Oehrlein SM, Jacobson RB, Flack FS, Lagally MG, Kershner RJ. Optically actuated micromanipulation of silicon nanomembranes Proceedings of Spie - the International Society For Optical Engineering. 7400. DOI: 10.1117/12.826424 |
0.32 |
|
2009 |
Euaruksakul C, Chen F, Tanto B, Ritz CS, Paskiewicz DM, Himpsel FJ, Savage DE, Liu Z, Yao Y, Liu F, Lagally MG. Relationships between strain and band structure in Si(001) and Si(110) nanomembranes Physical Review B - Condensed Matter and Materials Physics. 80. DOI: 10.1103/Physrevb.80.115323 |
0.815 |
|
2009 |
Harb M, Peng W, Sciaini G, Hebeisen CT, Ernstorfer R, Eriksson MA, Lagally MG, Kruglik SG, Miller RJD. Excitation of longitudinal and transverse coherent acoustic phonons in nanometer free-standing films of (001) Si Physical Review B - Condensed Matter and Materials Physics. 79. DOI: 10.1103/Physrevb.79.094301 |
0.362 |
|
2009 |
Zhang PP, Yang B, Rugheimer PP, Roberts MM, Savage DE, Liu F, Lagally MG. Influence of germanium on thermal dewetting and agglomeration of the silicon template layer in thin silicon-on-insulator Journal of Physics D: Applied Physics. 42. DOI: 10.1088/0022-3727/42/17/175309 |
0.792 |
|
2009 |
Yuan HC, Shin J, Qin G, Sun L, Bhattacharya P, Lagally MG, Celler GK, Ma Z. Flexible photodetectors on plastic substrates by use of printing transferred single-crystal germanium membranes Applied Physics Letters. 94. DOI: 10.1063/1.3062938 |
0.347 |
|
2008 |
Euaruksakul C, Li ZW, Zheng F, Himpsel FJ, Ritz CS, Tanto B, Savage DE, Liu XS, Lagally MG. Influence of strain on the conduction band structure of strained silicon nanomembranes. Physical Review Letters. 101: 147403. PMID 18851573 DOI: 10.1103/PhysRevLett.101.147403 |
0.795 |
|
2008 |
Jiang H, Jantan MK, Manolache S, Denes FS, Lagally MG. Plasma-enhanced synthesis of thin fluoropolymer layers with low Raman and fluorescence backgrounds. Langmuir : the Acs Journal of Surfaces and Colloids. 24: 8672-7. PMID 18627194 DOI: 10.1021/La801396K |
0.314 |
|
2008 |
Harb M, Ernstorfer R, Hebeisen CT, Sciaini G, Peng W, Dartigalongue T, Eriksson MA, Lagally MG, Kruglik SG, Miller RJ. Electronically driven structure changes of Si captured by femtosecond electron diffraction. Physical Review Letters. 100: 155504. PMID 18518123 DOI: 10.1103/Physrevlett.100.155504 |
0.356 |
|
2008 |
Eriksson MA, Simmons CB, Shaji N, Thalakulam M, Sackmann EK, Bael BJV, Savage DE, Lagally MG, Joynt R, Friesen M, Blick RH, Rimberg AJ, Coppersmith SN. Spin Blockade and Lifetime Enhanced Transport in a Silicon/Silicon-Germanium Double-Quantum Dot (Invited) The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.2008.H-8-1 |
0.323 |
|
2008 |
Ryu HJ, Ritz CS, Klein LJ, Hamann HF, Lagally MG, Eriksson MA. Phonon transport and thermoelectricity in silicon nanostructures Ecs Transactions. 16: 983-988. DOI: 10.1149/1.2986860 |
0.789 |
|
2008 |
Kim-Lee HJ, Savage DE, Ritz CS, Lagally MG, Turner KT. Engineering SiGe growth using mechanically responsive ultrathin substrates Ecs Transactions. 16: 299-305. DOI: 10.1149/1.2986787 |
0.775 |
|
2008 |
Scott SA, Paskiewicz DM, Savage DE, Lagally MG. Silicon nanomembranes incorporating mixed crystal orientations Ecs Transactions. 16: 215-218. DOI: 10.1149/1.2986772 |
0.719 |
|
2008 |
Yuan HC, Kelly MM, Savage DE, Lagally MG, Celler GK, Ma Z. Thermally processed high-mobility MOS thin-film transistors on transferable single-crystal elastically strain-sharing Si/SiGe/Si nanomembranes Ieee Transactions On Electron Devices. 55: 810-815. DOI: 10.1109/Ted.2007.914833 |
0.485 |
|
2008 |
Lagally MG. Silicon nanomembranes: Opportunities for new Si functionalities via strain, flexibility, and layering Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 632-633. DOI: 10.1109/LEOS.2008.4688777 |
0.337 |
|
2008 |
Shaji N, Simmons CB, Thalakulam M, Klein LJ, Qin H, Luo H, Savage DE, Lagally MG, Rimberg AJ, Joynt R, Friesen M, Blick RH, Coppersmith SN, Eriksson MA. Spin blockade and lifetime-enhanced transport in a few-electron Si/SiGe double quantum dot Nature Physics. 4: 540-544. DOI: 10.1038/Nphys988 |
0.355 |
|
2008 |
Shaji N, Simmons CB, Klein LJ, Qin H, Savage DE, Lagally MG, Coppersmith SN, Joynt R, Friesen M, Blick RH, Eriksson MA. Top-gated few-electron double quantum dot in Si/SiGe Physica E: Low-Dimensional Systems and Nanostructures. 40: 520-523. DOI: 10.1016/J.Physe.2007.07.028 |
0.332 |
|
2008 |
Cullen SP, Ha S, Lagally MG, Gopalan P. Photopatternable Substrate-Independent Poly(glycidyl methacrylate-ran-2- (acryloyloxy) ethyl 2-methylacrylate) Polymer Films for Immobilization of Biomolecules Journal of Polymer Science, Part a: Polymer Chemistry. 46: 5826-5838. DOI: 10.1002/Pola.22896 |
0.581 |
|
2007 |
Scott SA, Roberts MM, Savage DE, Lagally MG. Strained Si-based nanomembrane materials Materials Research Society Symposium Proceedings. 958: 139-150. DOI: 10.1557/Proc-0958-L04-07 |
0.443 |
|
2007 |
Euaruksakul C, Li Z, Savage DE, Lagally MG. X-ray absorption spectroscopy of strained-Si nanomembranes Ecs Transactions. 6: 257-262. DOI: 10.1149/1.2728869 |
0.748 |
|
2007 |
Pang H, Yuan HC, Lagally MG, Celler GK, Ma Z. Instability of threshold voltage of flexible single-crystal Si TFTs Ecs Transactions. 6: 145-150. DOI: 10.1149/1.2728853 |
0.314 |
|
2007 |
Yuan HC, Ma Z, Ritz CS, Savage DE, Lagally MG, Celler GK. Complementary single-crystal silicon TFTs on plastic Ecs Transactions. 6: 139-144. DOI: 10.1149/1.2728852 |
0.787 |
|
2007 |
Opotowsky AC, Scott SA, Ritz CS, Savage DE, Celler GK, Lagally MG. Structure of elastically strain-sharing silicon(110) nanomembranes New Journal of Physics. 9. DOI: 10.1088/1367-2630/9/8/270 |
0.841 |
|
2007 |
Yuan HC, Wang G, Ma Z, Roberts MM, Savage DE, Lagally MG. Flexible thin-film transistors on biaxial- and uniaxial-strained Si and SiGe membranes Semiconductor Science and Technology. 22: S72-S75. DOI: 10.1088/0268-1242/22/1/S17 |
0.311 |
|
2007 |
Scott SA, Lagally MG. Elastically strain-sharing nanomembranes: Flexible and transferable strained silicon and silicon-germanium alloys Journal of Physics D: Applied Physics. 40. DOI: 10.1088/0022-3727/40/4/R01 |
0.458 |
|
2007 |
Fujikawa Y, Yamada-Takamura Y, Yoshikawa G, Ono T, Esashi M, Zhang PP, Lagally MG, Sakurai T. Silicon on insulator for symmetry-converted growth Applied Physics Letters. 90. DOI: 10.1063/1.2748099 |
0.436 |
|
2007 |
Peng W, Roberts MM, Nordberg EP, Flack FS, Colavita PE, Hamers RJ, Savage DE, Lagally MG, Eriksson MA. Single-crystal silicon/silicon dioxide multilayer heterostructures based on nanomembrane transfer Applied Physics Letters. 90. DOI: 10.1063/1.2734367 |
0.378 |
|
2006 |
Roberts MM, Klein LJ, Savage DE, Slinker KA, Friesen M, Celler G, Eriksson MA, Lagally MG. Elastically relaxed free-standing strained-silicon nanomembranes. Nature Materials. 5: 388-93. PMID 16604081 DOI: 10.1038/Nmat1606 |
0.438 |
|
2006 |
Zhang P, Tevaarwerk E, Park BN, Savage DE, Celler GK, Knezevic I, Evans PG, Eriksson MA, Lagally MG. Electronic transport in nanometre-scale silicon-on-insulator membranes. Nature. 439: 703-6. PMID 16467833 DOI: 10.1038/Nature04501 |
0.594 |
|
2006 |
Yuan HC, Ma Z, Lagally MG, Celler GK. Threshold-voltage instability of single-crystal Si thin-film transistors fabricated on plastic substrate Ecs Transactions. 3: 81-85. DOI: 10.1149/1.2356338 |
0.31 |
|
2006 |
Cheun H, Rugheimer PP, Larson BJ, Gopalan P, Lagally MG, Winokur MJ. Polymer light emitting diodes and poly(di- n -octylfluorene) thin films as fabricated with a microfluidics applicator Journal of Applied Physics. 100. DOI: 10.1063/1.2349467 |
0.728 |
|
2006 |
Yuan HC, Ma Z, Roberts MM, Savage DE, Lagally MG. High-speed strained-single-crystal-silicon thin-film transistors on flexible polymers Journal of Applied Physics. 100. DOI: 10.1063/1.2214301 |
0.47 |
|
2006 |
Fujikawa Y, Sakurai T, Lagally MG. Charge transfer in the atomic structure of Ge (1 0 5) Applied Surface Science. 252: 5244-5248. DOI: 10.1016/J.Apsusc.2005.12.010 |
0.392 |
|
2006 |
Yuan HC, Roberts MM, Savage DE, Lagally MG, Ma Z, Celler GK. Fabrication and transistor demonstration on Si-based nanomembranes 2006 Nsti Nanotechnology Conference and Trade Show - Nsti Nanotech 2006 Technical Proceedings. 1: 68-71. |
0.319 |
|
2006 |
Yuan HC, Wang G, Roberts MM, Savage DE, Lagally MG, Ma Z. Flexible thin-film transistors on strained Si/SiGe membranes Third International Sige Technology and Device Meeting, Istdm 2006 - Conference Digest. 2006. |
0.31 |
|
2005 |
AKIYAMA K, EGUCHI T, FUJIKAWA Y, AN T, ONO M, HASHIMOTO T, MORIKAWA Y, TERAKURA K, SAKURAI T, LAGALLY MG, HASEGAWA Y. AFM Observation of Ge/Si(105) Surfaces Hyomen Kagaku. 26: 486-491. DOI: 10.1380/Jsssj.26.486 |
0.35 |
|
2005 |
Fujikawa Y, Nagao T, Yamada-Takamura Y, Sakurai T, Hashimoto T, Morikawa Y, Terakura K, Lagally MG. Hydrogen-induced instability of the Ge(105) surface Physical Review Letters. 94. DOI: 10.1103/Physrevlett.94.086105 |
0.437 |
|
2005 |
Yang B, Zhang P, Savage DE, Lagally MG, Lu GH, Huang M, Liu F. Self-organization of semiconductor nanocrystals by selective surface faceting Physical Review B - Condensed Matter and Materials Physics. 72. DOI: 10.1103/Physrevb.72.235413 |
0.612 |
|
2005 |
Huang M, Rugheimer P, Lagally MG, Liu F. Bending of nanoscale ultrathin substrates by growth of strained thin films and islands Physical Review B - Condensed Matter and Materials Physics. 72. DOI: 10.1103/Physrevb.72.085450 |
0.769 |
|
2005 |
Qin H, Shaji N, Merrill NE, Kim HS, Toonen RC, Blick RH, Roberts MM, Savage DE, Lagally MG, Celler G. Formation of microtubes from strained SiGe/Si heterostructures New Journal of Physics. 7. DOI: 10.1088/1367-2630/7/1/241 |
0.435 |
|
2005 |
Evans PG, Tinberg DS, Roberts MM, Lagally MG, Xiao Y, Lai B, Cai Z. Germanium hut nanostressors on freestanding thin silicon membranes Applied Physics Letters. 87. DOI: 10.1063/1.2031941 |
0.428 |
|
2005 |
Yang B, Marcus MS, Keppel DG, Zhang PP, Li ZW, Larson BJ, Savage DE, Simmons JM, Castellini OM, Eriksson MA, Lagally MG. Template-directed carbon nanotube network using self-organized Si nanocrystals Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1952585 |
0.596 |
|
2005 |
Huang M, Nairn JA, Liu F, Lagally MG. Mechanical stability of ultrathin GeSi film on Si O2: The effect of SiSi O2 interface Journal of Applied Physics. 97. DOI: 10.1063/1.1926421 |
0.404 |
|
2005 |
Tevaarwerk E, Keppel DG, Rugheimer P, Lagally MG, Eriksson MA. Quantitative analysis of electric force microscopy: The role of sample geometry Review of Scientific Instruments. 76. DOI: 10.1063/1.1898183 |
0.724 |
|
2005 |
Evans PG, Rugheimer PP, Lagally MG, Lee CH, Lal A, Xiao Y, Lai B, Cai Z. Microfabricated strained substrates for Ge epitaxial growth Journal of Applied Physics. 97. DOI: 10.1063/1.1894579 |
0.805 |
|
2005 |
Huang M, Boons C, Roberts M, Savage DE, Lagally MG, Shaji N, Qin H, Blick R, Nairn JA, Liu F. Nanomechanical architecture of strained bilayer thin films: From design principles to experimental fabrication Advanced Materials. 17: 2860-2864. DOI: 10.1002/Adma.200501353 |
0.352 |
|
2005 |
Yuan HC, Roberts MM, Savage DE, Lagally MG, Ma Z. N-type thin-film transistors fabricated on transferred, elastically strain-shared Si/SiGe/Si membranes 2005 International Semiconductor Device Research Symposium. 2005: 207-208. |
0.341 |
|
2004 |
Lagally MG, Blick RH. Materials science: a 'bed of nails' on silicon. Nature. 432: 450-1. PMID 15565134 DOI: 10.1038/432450A |
0.381 |
|
2004 |
Yang B, Liu F, Lagally MG. Local strain-mediated chemical potential control of quantum dot self-organization in heteroepitaxy. Physical Review Letters. 92: 025502. PMID 14753943 DOI: 10.1103/Physrevlett.92.025502 |
0.393 |
|
2004 |
Flack FS, Yang B, Huang M, Marcus M, Simmons J, Castellini OM, Eriksson MA, Liu F, Lagally MG. Pattern formation on silicon-on-insulator Materials Research Society Symposium Proceedings. 854: 1-9. DOI: 10.1557/Proc-859-Jj1.3 |
0.466 |
|
2004 |
Flack FS, Yang B, Huang M, Marcus M, Simmons J, Castellini OM, Eriksson MA, Liu F, Lagally MG. Pattern Formation on Silicon-on-Insulator Mrs Proceedings. 859. DOI: 10.1557/PROC-859-JJ1.3 |
0.359 |
|
2004 |
Li AP, Flack F, Lagally MG, Chisholm MF, Yoo K, Zhang Z, Weitering HH, Wendelken JF. Photoluminescence and local structure of Ge nanoclusters on Si without a wetting layer Physical Review B - Condensed Matter and Materials Physics. 69. DOI: 10.1103/Physrevb.69.245310 |
0.405 |
|
2004 |
Klein LJ, Slinker KA, Truitt JL, Goswami S, Lewis KLM, Coppersmith SN, Van Der Weide DW, Friesen M, Blick RH, Savage DE, Lagally MG, Tahan C, Joynt R, Eriksson MA, Chu JO, et al. Coulomb blockade in a silicon/silicon-germanium two-dimensional electron gas quantum dot Applied Physics Letters. 84: 4047-4049. DOI: 10.1063/1.1751612 |
0.351 |
|
2004 |
Larson BJ, Gillmor SD, Lagally MG. Controlled deposition of picoliter amounts of fluid using an ultrasonically driven micropipette Review of Scientific Instruments. 75: 832-836. DOI: 10.1063/1.1688436 |
0.71 |
|
2004 |
Barnes BM, Li Z, Savage DE, Wiedemann E, Lagally MG. Quantifying the thickness of magnetically active layers using x-ray resonant magnetic scattering Journal of Applied Physics. 95: 6654-6656. DOI: 10.1063/1.1667868 |
0.743 |
|
2004 |
Noh JS, Eom CB, Lagally MG, Sun JZ, Kim HC. Observation of inverse magnetoresistance in perovskite oxide tunnel junctions Physica Status Solidi (B) Basic Research. 241: 1490-1493. DOI: 10.1002/pssb.200304559 |
0.554 |
|
2004 |
Flack FS, Yang B, Huang M, Marcus M, Simmons J, Castellini OM, Eriksson MA, Liu F, Lagally MG. Pattern formation on silicon-on-insulator Materials Research Society Symposium Proceedings. 854: 1-9. |
0.36 |
|
2004 |
Evans PG, Rugheimer PP, Roberts M, Lagally MG, Lee CH, Xiao Y, Lai B, Cai Z. Direct synchrotron x-ray microdiffraction measurements of strain and bending in micromachined silicon devices Applications of X-Rays in Mechanical Engineering 2004. 115-118. |
0.776 |
|
2003 |
Huang M, Cuma M, Lagally MG, Liu F. Bending of nanoscale thin Si film induced by growth of Ge islands: Hut vs. dome Materials Research Society Symposium - Proceedings. 791: 183-188. DOI: 10.1557/Proc-791-Q6.4 |
0.474 |
|
2003 |
Friesen M, Rugheimer P, Savage DE, Lagally MG, Van der Weide DW, Joynt R, Eriksson MA. Practical design and simulation of silicon-based quantum-dot qubits Physical Review B - Condensed Matter and Materials Physics. 67: 1213011-1213014. DOI: 10.1103/Physrevb.67.121301 |
0.742 |
|
2003 |
Sutter P, Sutter E, Rugheimer P, Lagally MG. Nanoscale strain and band structure engineering using epitaxial stressors on ultrathin silicon-on-insulator Surface Science. 532: 789-794. DOI: 10.1016/S0039-6028(03)00223-1 |
0.811 |
|
2003 |
Sutter E, Sutter P, Zahl P, Rugheimer P, Lagally MG. Spontaneous transition from epitaxially constrained to equilibrium Ge nanocrystals on silicon-on-insulator (1 0 0) Surface Science. 532: 785-788. DOI: 10.1016/S0039-6028(03)00212-7 |
0.789 |
|
2003 |
Yoo K, Li AP, Zhang Z, Weitering HH, Flack F, Lagally MG, Wendelken JF. Fabrication of Ge nanoclusters on Si with a buffer layer-assisted growth method Surface Science. 546. DOI: 10.1016/J.Susc.2003.09.029 |
0.446 |
|
2002 |
Liu F, Huang M, Rugheimer PP, Savage DE, Lagally MG. Nanostressors and the nanomechanical response of a thin silicon film on an insulator. Physical Review Letters. 89: 136101. PMID 12225041 DOI: 10.1103/Physrevlett.89.136101 |
0.783 |
|
2002 |
Fujikawa Y, Akiyama K, Nagao T, Sakurai T, Lagally MG, Hashimoto T, Morikawa Y, Terakura K. Origin of the stability of Ge(105) on si: a new structure model and surface strain relaxation. Physical Review Letters. 88: 176101-176101. PMID 12005768 DOI: 10.1103/Physrevlett.88.176101 |
0.489 |
|
2002 |
Liu F, Rugheimer P, Mateeva E, Savage DE, Lagally MG. Nanomechanics: response of a strained semiconductor structure. Nature. 416: 498. PMID 11932735 DOI: 10.1038/416498A |
0.783 |
|
2002 |
Yang B, Woll AR, Rugheimer P, Lagally MG. One-dimensional ordering of self-assembled Ge dots on photolithographically patterned structures on Si (001) Materials Research Society Symposium - Proceedings. 715: 239-246. DOI: 10.1557/Proc-715-A8.5 |
0.79 |
|
2002 |
Lagally MG, Rugheimer PP. Strain engineering in germanium quantum dot growth on silicon and silicon-on-insulator Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 41: 4863-4866. DOI: 10.1143/Jjap.41.4863 |
0.775 |
|
2002 |
Woll AR, Rugheimer P, Lagally MG. Self-organized quantum dots International Journal of High Speed Electronics and Systems. 12: 45-78. DOI: 10.1142/S0129156402001125 |
0.76 |
|
2002 |
Tevaarwerk E, Rugheimer P, Castellini OM, Keppel DG, Utley ST, Savage DE, Lagally MG, Eriksson MA. Electrically isolated SiGe quantum dots Applied Physics Letters. 80: 4626-4628. DOI: 10.1063/1.1484251 |
0.759 |
|
2002 |
Kelly JJ, Barnes BM, Flack F, Lagally DP, Savage DE, Friesen M, Lagally MG. Comparison of magnetic- and chemical-boundary roughness in magnetic films and multilayers Journal of Applied Physics. 91: 9978-9986. DOI: 10.1063/1.1478142 |
0.724 |
|
2002 |
Woll AR, Rugheimer P, Lagally MG. Strain engineering, self-assembly, and nanoarchitectures in thin SiGe films on Si Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 96: 94-101. DOI: 10.1016/S0921-5107(02)00298-2 |
0.774 |
|
2002 |
Sutter P, Lagally MG. Nucleationless island formation in SiGe/Si(100) heteroepitaxy Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 89: 45-48. DOI: 10.1016/S0921-5107(01)00788-7 |
0.46 |
|
2002 |
Hashimoto T, Morikawa Y, Fujikawa Y, Sakurai T, Lagally MG, Terakura K. Rebonded SB step model of Ge/Si(1 0 5)1 × 2: A first-principles theoretical study Surface Science. 513. DOI: 10.1016/S0039-6028(02)01813-7 |
0.373 |
|
2002 |
Gillmor SD, Rugheimer PP, Lagally MG. Computation with DNA on surfaces Surface Science. 500: 699-721. DOI: 10.1016/S0039-6028(01)01524-2 |
0.754 |
|
2002 |
Fujikawa Y, Akiyama K, Nagao T, Sakurai T, Lagally MG, Hashimoto T, Morikawa Y, Terakura K. Origin of the stability of Ge(105) on Si: A new structure model and surface strain relaxation Physical Review Letters. 88: 1761011-1761014. |
0.398 |
|
2002 |
Woll AR, Moran P, Rehder EM, Yang B, Kuech TF, Lagally MG. Strain relaxation in SiGe thin films studied by low-energy electron microscopy Materials Research Society Symposium - Proceedings. 696: 119-124. |
0.401 |
|
2001 |
Woll AR, Moran P, Rehder EM, Yang B, Kuech TF, Lagally MG. Strain Relaxation in SiGe Thin Films Studied by Low-Energy Electron Microscopy Mrs Proceedings. 696. DOI: 10.1557/Proc-696-N4.2 |
0.344 |
|
2001 |
Liu F, Li AH, Lagally MG. Self-assembly of two-dimensional islands via strain-mediated coarsening Physical Review Letters. 87. DOI: 10.1103/Physrevlett.87.126103 |
0.308 |
|
2001 |
Zielasek V, Liu F, Zhao Y, Maxson JB, Lagally MG. Surface stress-induced island shape transition in Si(001) homoepitaxy Physical Review B - Condensed Matter and Materials Physics. 64: 2013201-2013204. DOI: 10.1103/Physrevb.64.201320 |
0.411 |
|
2000 |
Lu ZY, Liu F, Wang CZ, Qin XR, Swartzentruber BS, Lagally MG, Ho KM. Unique dynamic appearance of a Ge-Si Ad-dimer on Si(001) Physical Review Letters. 85: 5603-5606. PMID 11136057 DOI: 10.1103/Physrevlett.85.5603 |
0.789 |
|
2000 |
Qin XR, Swartzentruber BS, Lagally MG. Diffusional kinetics of SiGe dimers on Si(100) using atom-tracking scanning tunneling microscopy Physical Review Letters. 85: 3660-3663. PMID 11030975 DOI: 10.1103/Physrevlett.85.3660 |
0.784 |
|
2000 |
Maxson JB, Savage DE, Liu F, Tromp RM, Reuter MC, Lagally MG. Thermal roughening of a thin film: A new type of roughening transition Physical Review Letters. 85: 2152-5. PMID 10970485 DOI: 10.1103/Physrevlett.85.2152 |
0.805 |
|
2000 |
Li A, Liu F, Petrovykh DY, Lin JL, Viernow J, Himpsel FJ, Lagally MG. Creation of 'quantum platelets' via strain-controlled self-organization at steps Physical Review Letters. 85: 5380-5383. DOI: 10.1103/Physrevlett.85.5380 |
0.387 |
|
2000 |
Liu S, Jayanthi CS, Wu S, Qin X, Zhang Z, Lagally MG. Formation of chain andV-shaped structures in the initial stage growth ofSi/Si(100) Physical Review B. 61: 4421-4424. DOI: 10.1103/Physrevb.61.4421 |
0.397 |
|
2000 |
Gillmor SD, Thiel AJ, Strother TC, Smith LM, Lagally MG. Hydrophilic/hydrophobic patterned surfaces as templates for DNA arrays Langmuir. 16: 7223-7228. DOI: 10.1021/La991026A |
0.712 |
|
2000 |
Maxson JB, Perkins N, Savage DE, Woll AR, Zhang L, Kuech TF, Lagally MG. Novel dark-field imaging of GaN {0001} surfaces with low-energy electron microscopy Surface Science. 464: 217-222. DOI: 10.1016/S0039-6028(00)00672-5 |
0.308 |
|
1999 |
Wang L, Liu Q, Frutos AG, Gillmor SD, Thiel AJ, Strother TC, Condon AE, Corn RM, Lagally MG, Smith LM. Surface-based DNA computing operations: DESTROY and READOUT. Bio Systems. 52: 189-91. PMID 10636044 DOI: 10.1016/S0303-2647(99)00046-5 |
0.7 |
|
1999 |
Liu Q, Frutos AG, Wang L, Thiel AJ, Gillmor SD, Strother CT, Condon AE, Corn RM, Lagally MG, Smith LM. Progress toward demonstration of a surface based DNA computation: a one word approach to solve a model satisfiability problem. Bio Systems. 52: 25-33. PMID 10636027 DOI: 10.1016/S0303-2647(99)00029-5 |
0.704 |
|
1999 |
Sutter P, Lagally M. Dislocation-Induced Surface Strain on (001) Silicon-On-Insulator Mrs Proceedings. 570. DOI: 10.1557/Proc-570-235 |
0.445 |
|
1999 |
Sullivan JS, Mateeva E, Evans H, Savage DE, Lagally MG. Properties of Si1-xGex three-dimensional islands Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 17: 2345-2350. DOI: 10.1116/1.581771 |
0.428 |
|
1999 |
Jaloviar SG, Lin J, Liu F, Zielasek V, McCaughan L, Lagally MG. Step-Induced Optical Anisotropy of Vicinal Si(001) Physical Review Letters. 82: 791-794. DOI: 10.1103/Physrevlett.82.791 |
0.424 |
|
1999 |
Liu F, Davenport SE, Evans HM, Lagally MG. Self-organized replication of 3D coherent island size and shape in multilayer heteroepitaxial films Physical Review Letters. 82: 2528-2531. DOI: 10.1103/Physrevlett.82.2528 |
0.387 |
|
1999 |
Sutter P, Lagally MG. Quantitative Determination of Dislocation-Induced Strain at the Surface of (001) Silicon-on-Insulator Physical Review Letters. 82: 1490-1493. DOI: 10.1103/Physrevlett.82.1490 |
0.42 |
|
1999 |
Qin XR, Lagally MG. View of the empty states of the Si(100)-(2×1) surface via scanning tunneling microscopy imaging at very low biases Physical Review B. 59: 7293-7296. DOI: 10.1103/Physrevb.59.7293 |
0.407 |
|
1999 |
Mateeva E, Sutter P, Lagally MG. Spontaneous self-embedding of three-dimensional SiGe islands Applied Physics Letters. 74: 567-569. DOI: 10.1063/1.123147 |
0.324 |
|
1999 |
Venezuela P, Tersoff J, Floro JA, Chason E, Follstaedt DM, Liu F, Lagally MG. Self-organized growth of alloy superlattices Nature. 397: 678-681. DOI: 10.1038/17767 |
0.397 |
|
1999 |
Sullivan JS, Evans H, Savage DE, Wilson MR, Lagally MG. Mechanisms determining three-dimensional SiGe island density on Si(001) Journal of Electronic Materials. 28: 426-431. DOI: 10.1007/S11664-999-0090-2 |
0.432 |
|
1998 |
MacKay JF, Pearson DW, Nelms BE, DeLuca PM, Gould MN, Lagally MG. A double mirror W/C multilayer monochromator for radiation biology applications Medical Physics. 25: 773-779. PMID 9608490 DOI: 10.1118/1.598259 |
0.333 |
|
1998 |
Rudkevich E, Liu F, Savage DE, Kuech TF, McCaughan L, Lagally MG. Hydrogen Induced Si Surface Segregation on Ge-Covered Si(001) Physical Review Letters. 81: 3467-3470. DOI: 10.1103/Physrevlett.81.3467 |
0.435 |
|
1998 |
Qin XR, Liu F, Swartzentruber BS, Lagally MG. Modification of Si(100) Substrate Bonding by Adsorbed Ge or Si Dimer Islands Physical Review Letters. 81: 2288-2291. DOI: 10.1103/Physrevlett.81.2288 |
0.801 |
|
1998 |
Liu F, Tersoff J, Lagally MG. Self-Organization of Steps in Growth of Strained Films on Vicinal Substrates Physical Review Letters. 80: 1268-1271. DOI: 10.1103/Physrevlett.80.1268 |
0.382 |
|
1998 |
Sutter P, Mateeva E, Sullivan J, Lagally M. Low-energy electron microscopy of nanoscale three-dimensional SiGe islands on Si(100) Thin Solid Films. 336: 262-270. DOI: 10.1016/S0040-6090(98)01308-X |
0.471 |
|
1998 |
Liu F, Lagally MG. Strain-induced self-organization of steps and islands in SiGe/Si multilayer films Metallurgical and Materials Transactions a-Physical Metallurgy and Materials Science. 29: 2111-2119. DOI: 10.1007/S11661-998-0036-Y |
0.408 |
|
1998 |
Teichert C, Bean JC, Lagally MG. Self-organized nanostructures in Si 1-x Ge x films on Si(001) Applied Physics A. 67: 675-685. DOI: 10.1007/S003390050839 |
0.395 |
|
1997 |
Qin XR, Lagally MG. Adatom Pairing Structures for Ge on Si(100): The Initial Stage of Island Formation Science. 278: 1444-1447. PMID 9367953 DOI: 10.1126/Science.278.5342.1444 |
0.429 |
|
1997 |
Zhang Z, Lagally MG. Atomistic Processes in the Early Stages of Thin-Film Growth Science. 276: 377-383. PMID 9103189 DOI: 10.1126/Science.276.5311.377 |
0.311 |
|
1997 |
Zhang Z, Wu F, Lagally MG. AN ATOMISTIC VIEW OF Si(001) HOMOEPITAXY Annual Review of Materials Science. 27: 525-553. DOI: 10.1146/Annurev.Matsci.27.1.525 |
0.305 |
|
1997 |
Rudkevich E, Savage DE, Cai W, Bean JC, Sullivan JS, Nayak S, Kuech TF, McCaughan L, Lagally MG. Extended-spectral-range Fourier transform infrared-attenuated total reflection spectroscopy on Si surfaces using a novel Si coated Ge attenuated total reflection prism Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 15: 2153-2157. DOI: 10.1116/1.580622 |
0.417 |
|
1997 |
Mateeva E, Sutter P, Bean JC, Lagally MG. Mechanism of organization of three-dimensional islands in SiGe/Si multilayers Applied Physics Letters. 71: 3233-3235. DOI: 10.1063/1.120300 |
0.426 |
|
1997 |
Liu F, Lagally M. Self-organized nanoscale structures in films Surface Science. 386: 169-181. DOI: 10.1016/S0039-6028(97)00303-8 |
0.397 |
|
1997 |
Liu F, Salling C, Lagally M. Unique edge structure and stability of fabricated dimer islands on Si(001) Surface Science. 370: L213-L218. DOI: 10.1016/S0039-6028(96)01172-7 |
0.444 |
|
1996 |
Tersoff J, Teichert C, Lagally MG. Self-organization in growth of quantum dot superlattices. Physical Review Letters. 76: 1675-1678. PMID 10060489 DOI: 10.1103/Physrevlett.76.1675 |
0.338 |
|
1996 |
Ebert P, Heinrich M, Simon M, Domke C, Urban K, Shih CK, Webb MB, Lagally MG. Thermal formation of Zn-dopant-vacancy defect complexes on InP(110) surfaces. Physical Review. B, Condensed Matter. 53: 4580-4590. PMID 9984016 DOI: 10.1103/Physrevb.53.4580 |
0.633 |
|
1996 |
Kravchenko I, Salling C, Lagally M. Antimony Cluster Manipulation on the Si(001) Surface by Means of STM Mrs Proceedings. 448. DOI: 10.1557/Proc-448-205 |
0.304 |
|
1996 |
Lin JL, Jaloviar SG, Mantese L, Aspnes DE, McCaughan L, Lagally MG. Comparative study of the reflectance difference spectrum from Si(001) using reflectance difference spectroscopy/low-energy electron diffraction/ scanning tunneling microscopy Materials Research Society Symposium - Proceedings. 406: 401-405. DOI: 10.1557/Proc-406-401 |
0.398 |
|
1996 |
ZHANG Z, WU F, LAGALLY MG. KINETICS, DYNAMICS AND MUTUAL INTERACTIONS OF DEFECTS ON Si(001) Surface Review and Letters. 3: 1449-1462. DOI: 10.1142/S0218625X96002461 |
0.329 |
|
1996 |
Ma J, Garni B, Perkins N, O’Brien WL, Kuech TF, Lagally MG. Photoemission spectroscopy studies of the surface of GaN films grown by vapor phase epitaxy Applied Physics Letters. 69: 3351-3353. DOI: 10.1063/1.117303 |
0.331 |
|
1996 |
Garni B, Ma J, Perkins N, Liu J, Kuech TF, Lagally MG. Scanning tunneling microscopy and tunneling luminescence of the surface of GaN films grown by vapor phase epitaxy Applied Physics Letters. 68: 1380-1382. DOI: 10.1063/1.116086 |
0.359 |
|
1996 |
Nayak S, Huang JW, Redwing JM, Savage DE, Lagally MG, Kuech TF. Influence of oxygen on surface morphology of metalorganic vapor phase epitaxy grown GaAs (001) Applied Physics Letters. 68: 1270-1272. DOI: 10.1063/1.115949 |
0.317 |
|
1995 |
Zhang Z, Wu F, Zandvliet HJ, Poelsema B, Metiu H, Lagally MG. Energetics and dynamics of Si Ad-dimers on Si(001). Physical Review Letters. 74: 3644-3647. PMID 10058257 DOI: 10.1103/Physrevlett.74.3644 |
0.399 |
|
1995 |
Vasek JE, Zhang Z, Salling CT, Lagally MG. Effects of hydrogen impurities on the diffusion, nucleation, and growth of Si on Si(001). Physical Review B. 51: 17207-17210. PMID 9978738 DOI: 10.1103/Physrevb.51.17207 |
0.408 |
|
1995 |
Ebert P, Heinrich M, Simon M, Urban K, Lagally MG. Formation of anion vacancies by Langmuir evaporation from InP and GaAs (110) surfaces at low temperatures. Physical Review. B, Condensed Matter. 51: 9696-9701. PMID 9977635 DOI: 10.1103/Physrevb.51.9696 |
0.304 |
|
1995 |
Nayak S, Savage D, Chu H, Lagally M, Kuech T. In situ RHEED and AFM investigation of growth front morphology evolution of Si(001) grown by UHV-CVD Journal of Crystal Growth. 157: 168-171. DOI: 10.1016/0022-0248(95)00383-5 |
0.399 |
|
1994 |
Nayak S, Redwing J, Huang J, Lagally M, Kuech T. Influence of Impurities On Mechanisms of Growth in Movpe GaAs Mrs Proceedings. 367. DOI: 10.1557/Proc-367-293 |
0.413 |
|
1994 |
Nayak S, Redwing J, Kuech T, Savage D, Lagally M. Interfacial Roughness in GaAs/A1GaAs Multilayers: Influence of Controlled Impurity Addition Mrs Proceedings. 332. DOI: 10.1557/Proc-332-249 |
0.31 |
|
1994 |
Ebert P, Urban K, Lagally MG. Charge state dependent structural relaxation around anion vacancies on InP(110) and GaP(110) surfaces Physical Review Letters. 72: 840-843. DOI: 10.1103/Physrevlett.72.840 |
0.314 |
|
1994 |
Geisz JF, Kuech TF, Lagally MG, Cardone F, Potemski RM. Film stress of sputtered W/C multilayers and strain relaxation upon annealing Journal of Applied Physics. 75: 1530-1533. DOI: 10.1063/1.356390 |
0.418 |
|
1994 |
Redwing JM, Nayak S, Savage DE, Lagally MG, Dawson-Elli DF, Kuech TF. The effect of controlled impurity incorporation on interfacial roughness in GaAs/AlxGa1-xAs superlattice structures grown by metalorganic vapor phase epitaxy Journal of Crystal Growth. 145: 792-798. DOI: 10.1016/0022-0248(94)91144-4 |
0.356 |
|
1993 |
Heller EJ, Zhang ZY, Lagally MG. Step and kink energetics on GaAs(001). Physical Review Letters. 71: 743-746. PMID 10055355 DOI: 10.1103/Physrevlett.71.743 |
0.313 |
|
1993 |
Wu F, Jaloviar SG, Savage DE, Lagally MG. Roughening of steps during homoepitaxial growth on Si(001). Physical Review Letters. 71: 4190-4193. PMID 10055179 DOI: 10.1103/Physrevlett.71.4190 |
0.394 |
|
1993 |
Kitamura N, Swartzentruber BS, Lagally MG, Webb MB. Variable-temperature STM measurements of step kinetics on Si(001). Physical Review. B, Condensed Matter. 48: 5704-5707. PMID 10009100 DOI: 10.1103/Physrevb.48.5704 |
0.793 |
|
1993 |
Lagally M, Savage D. Quantitative Electron Diffraction from Thin Films Mrs Bulletin. 18: 24-31. DOI: 10.1557/S0883769400043414 |
0.333 |
|
1993 |
Geisz JF, Phang YH, Kuech TF, Lagally MG, Cardone F, Potemski RM. Strain Relaxation and Oxide Formation on Annealed W/C Multilayers Mrs Proceedings. 321. DOI: 10.1557/Proc-321-215 |
0.403 |
|
1993 |
Nayak S, Redwing JM, Kuech TF, Phang Y, Savage DE, Lagally MG. X-Ray Diffraction Determination of Interface Roughness in GaAs/AlxGa1-xAs Multilayers Mrs Proceedings. 312. DOI: 10.1557/Proc-312-137 |
0.301 |
|
1993 |
Lagally MG. An Atomic-Level View of Kinetic and Thermodynamic Influences in the Growth of Thin Films Japanese Journal of Applied Physics. 32: 1493-1501. DOI: 10.1143/Jjap.32.1493 |
0.311 |
|
1993 |
Phang YH, Savage DE, Kariotis R, Lagally MG. X‐ray diffraction measurement of partially correlated interfacial roughness in multilayers Journal of Applied Physics. 74: 3181-3188. DOI: 10.1063/1.354588 |
0.315 |
|
1992 |
Miguel JJD, Aumann CE, Jaloviar SG, Kariotis R, Lagally MG. Experimental determination of the strain potentials on vicinal Si(001) surfaces. Physical Review B. 46: 10257-10261. PMID 10002869 DOI: 10.1103/Physrevb.46.10257 |
0.441 |
|
1992 |
Savage DE, Schimke N, Phang Y, Lagally MG. Interfacial roughness correlation in multilayer films: Influence of total film and individual layer thicknesses Journal of Applied Physics. 71: 3283-3293. DOI: 10.1063/1.350976 |
0.32 |
|
1992 |
Phang YH, Savage DE, Kuech TF, Lagally MG, Park JS, Wang KL. X‐ray diffraction determination of interfacial roughness correlation in SixGe1−x/Si and GaAs/AlxGa1−xAs superlattices Applied Physics Letters. 60: 2986-2988. DOI: 10.1063/1.106784 |
0.399 |
|
1992 |
Mo YW, Lagally MG. Scanning tunneling microscopy studies of the initial stages of germanium growth on Si(001) Materials Science and Engineering B. 14: 311-316. DOI: 10.1016/0921-5107(92)90314-Y |
0.386 |
|
1992 |
Mo YW, Kleiner J, Webb MB, Lagally MG. Surface self-diffusion of Si on Si(001) Surface Science. 268: 275-295. DOI: 10.1016/0039-6028(92)90968-C |
0.684 |
|
1992 |
Aumann C, de Miguel J, Kariotis R, Lagally M. Temperature dependence of the step structure of vicinal Si(001) surfaces Surface Science. 275: 1-15. DOI: 10.1016/0039-6028(92)90643-K |
0.407 |
|
1991 |
Miguel JJD, Aumann CE, Kariotis R, Lagally MG. Evolution of vicinal Si(001) from double- to single-atomic-height steps with temperature. Physical Review Letters. 67: 2830-2833. PMID 10044566 DOI: 10.1103/Physrevlett.67.2830 |
0.394 |
|
1991 |
Mo YW, Kleiner J, Webb MB, Lagally MG. Activation energy for surface diffusion of Si on Si(001): A scanning-tunneling-microscopy study. Physical Review Letters. 66: 1998-2001. PMID 10043364 DOI: 10.1103/Physrevlett.66.1998 |
0.707 |
|
1991 |
Heller EJ, Lagally MG. Scanning Tunnelling Microscopy Investigation of Surface Morphology in the Growth of GaAs(001) Mrs Proceedings. 237. DOI: 10.1557/Proc-237-249 |
0.373 |
|
1991 |
Swartzentruber BS, Mo YW, Lagally MG. Domain boundary control of edge roughness in vicinal Si(001) Applied Physics Letters. 58: 822-824. DOI: 10.1063/1.104500 |
0.766 |
|
1991 |
Mo Y, Lagally M. Anisotropy in surface migration of Si and Ge on Si(001) Surface Science Letters. 248: A244. DOI: 10.1016/0167-2584(91)90320-Q |
0.443 |
|
1991 |
Mo YW, Lagally MG. Anisotropy in surface migration of Si and Ge on Si(001) Surface Science. 248: 313-320. DOI: 10.1016/0039-6028(91)91177-Y |
0.334 |
|
1991 |
Webb MB, Men FK, Swartzentruber BS, Kariotis R, Lagally MG. Surface step configurations under strain: kinetics and step-step interactions Surface Science. 242: 23-31. DOI: 10.1016/0039-6028(91)90236-L |
0.806 |
|
1991 |
Mo YW, Lagally MG. Scanning tunneling microscopy studies of the growth process of Ge on Si(001) Journal of Crystal Growth. 111: 876-881. DOI: 10.1016/0022-0248(91)91100-O |
0.411 |
|
1991 |
Lagally MG. Adatome auf Festkörperoberflächen Physik Journal. 47: 383-385. DOI: 10.1002/Phbl.19910470507 |
0.315 |
|
1990 |
Mo Y, Savage DE, Swartzentruber BS, Lagally MG. Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001). Physical Review Letters. 65: 1020-1023. PMID 10043085 DOI: 10.1103/Physrevlett.65.1020 |
0.755 |
|
1990 |
Swartzentruber BS, Mo Y, Kariotis R, Lagally MG, Webb MB. Direct determination of step and kink energies on vicinal Si(001). Physical Review Letters. 65: 1913-1916. PMID 10042396 DOI: 10.1103/Physrevlett.65.1913 |
0.809 |
|
1990 |
MO Y, LAGALLY M. KINETIC PATHWAY IN STRANSKI-KRASTANOV GROWTH OF Ge ON Si(001) Modern Physics Letters B. 4: 1379-1384. DOI: 10.1142/S0217984990001732 |
0.363 |
|
1990 |
Swartzentruber BS, Mo YW, Webb MB, Lagally MG. Observations of strain effects on the Si(001) surface using scanning tunneling microscopya) Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 8: 210-213. DOI: 10.1116/1.577068 |
0.819 |
|
1990 |
Mo YW, Kariotis R, Swartzentruber BS, Webb MB, Lagally MG. Scanning tunneling microscopy study of diffusion, growth, and coarsening of Si on Si (001) Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 8: 201-206. DOI: 10.1116/1.577066 |
0.819 |
|
1990 |
Webb MB, Men FK, Swartzentruber BS, Lagally MG. The effect of external stress on Si surfaces Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 8: 2658-2661. DOI: 10.1116/1.576689 |
0.819 |
|
1990 |
Kariotis R, Swartzentruber BS, Lagally MG. Model diffraction profiles parallel to rough step edges Journal of Applied Physics. 67: 2848-2852. DOI: 10.1063/1.345454 |
0.745 |
|
1990 |
Garni B, Savage D, Lagally M. RHEED study of the kinetics of the (2 × 1)-to-(7 × 7) transformation in cleaved Si(111) Surface Science. 235: L324-L328. DOI: 10.1016/0039-6028(90)90781-3 |
0.329 |
|
1990 |
Kleiner J, Aumann CE, Mo YW, Kariotis R, Lagally MG. Model two-dimensional diffraction profiles from disordered vicinal surfaces and random island configurations Surface Science. 240: 293-305. DOI: 10.1016/0039-6028(90)90748-W |
0.356 |
|
1989 |
Mo Y, Swartzentruber BS, Kariotis R, Webb MB, Lagally MG. Growth and equilibrium structures in the epitaxy of Si on Si(001). Physical Review Letters. 63: 2393-2396. PMID 10040877 DOI: 10.1103/Physrevlett.63.2393 |
0.822 |
|
1989 |
Swartzentruber BS, Mo Y, Webb MB, Lagally MG. Scanning tunneling microscopy studies of structural disorder and steps on Si surfaces Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 7: 2901-2905. DOI: 10.1116/1.576167 |
0.822 |
|
1989 |
Tringides MC, Luscombe JH, Lagally MG. Diffusive disordering kinetics in one dimension Physical Review B. 39: 9377-9383. DOI: 10.1103/Physrevb.39.9377 |
0.558 |
|
1989 |
Lagally MG, Kariotis R, Swartzentruber BS, Mo YW. Ordering kinetics at surfaces Ultramicroscopy. 31: 87-98. DOI: 10.1016/0304-3991(89)90038-7 |
0.779 |
|
1989 |
Mo Y, Kariotis R, Savage D, Lagally M. Anisotropic growth and “layer-by-layer” epitaxy Surface Science Letters. 219: L551-L559. DOI: 10.1016/0167-2584(89)90266-1 |
0.412 |
|
1989 |
Haneman D, Rownd J, Lagally M. Measurement of conversion temperatures for Si(111) 2 × 1 Surface Science Letters. 224: L965-L968. DOI: 10.1016/0167-2584(89)90135-7 |
0.341 |
|
1989 |
Mo YW, Kariotis R, Savage DE, Lagally MG. Anisotropic growth and "layer-by-layer" epitaxy Surface Science. 219. DOI: 10.1016/0039-6028(89)90499-8 |
0.416 |
|
1989 |
Kariotis R, Lagally M. Rate equation modelling of epitaxial growth Surface Science. 216: 557-578. DOI: 10.1016/0039-6028(89)90395-6 |
0.302 |
|
1988 |
Heller EJ, Savage DE, Lagally MG. Quantitative reflection high‐energy electron diffraction measurements of surface roughness in GaAs(100) Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 6: 1484-1485. DOI: 10.1116/1.575344 |
0.37 |
|
1988 |
Aumann CE, Savage DE, Kariotis R, Lagally MG. Step structure and dimer row correlations in vicinal Si(100) Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 6: 1963-1965. DOI: 10.1116/1.575216 |
0.348 |
|
1988 |
Pico CA, Lagally MG. Kinetics of titanium silicide formation on single‐crystal Si: Experiment and modeling Journal of Applied Physics. 64: 4957-4967. DOI: 10.1063/1.342445 |
0.433 |
|
1988 |
Tringides MC, Lagally MG. The use of peak intensity in diffraction measurements of growth kinetics on surfaces Surface Science. 195. DOI: 10.1016/0039-6028(88)90339-1 |
0.546 |
|
1987 |
Martin JA, Aumann CE, Moritz W, Savage DE, Kretschmar F, Tringides MC, Lagally MG. Atomic steps on Si(100) surfaces Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 5: 615-618. DOI: 10.1116/1.574685 |
0.619 |
|
1987 |
Savage DE, Lagally MG. Direct observation by reflection high‐energy electron diffraction of amorphous‐to‐crystalline transition in the growth of Sb on GaAs(110) Applied Physics Letters. 50: 1719-1721. DOI: 10.1063/1.97726 |
0.339 |
|
1987 |
Saloner D, Martin JA, Tringides MC, Savage DE, Aumann CE, Lagally MG. Determination of terrace size and edge roughness in vicinal Si{100} surfaces by surface-sensitive diffraction Journal of Applied Physics. 61: 2884-2893. DOI: 10.1063/1.337885 |
0.616 |
|
1986 |
Martin JA, Savage DE, Moritz W, Lagally MG. Structure, stability, and origin of (2perp) phases on Si(100). Physical Review Letters. 56: 1936-1939. PMID 10032815 DOI: 10.1103/Physrevlett.56.1936 |
0.406 |
|
1986 |
Pico CA, Tran NC, Jacobs JR, Lagally MG. Comparison of Kinetics of TiSi2 Formation on Si(100) and Si(111) Mrs Proceedings. 71. DOI: 10.1557/Proc-71-315 |
0.433 |
|
1986 |
Savage DE, Lagally MG. Reflection high‐energy electron diffraction study of the growth of In on GaAs(110) at different temperatures Journal of Vacuum Science & Technology B. 4: 943-954. DOI: 10.1116/1.583496 |
0.348 |
|
1986 |
Belkind A, Ezell E, Dror M, Luo WA, Jacobs JR, Lagally MG. Compositional and morphological analysis of AgCl films deposited by evaporation and R.F. sputtering Thin Solid Films. 142: 113-125. DOI: 10.1016/0040-6090(86)90307-X |
0.302 |
|
1986 |
Tringides M, Wu PK, Moritz W, Lagally MG. Ordering Kinetics for O on W(110) Berichte Der Bunsengesellschaft FüR Physikalische Chemie. 90: 277-281. DOI: 10.1002/bbpc.19860900324 |
0.432 |
|
1985 |
Savage DE, Lagally MG. Crystallography of In on GaAs(110): Possible relationship of laterally inhomogeneous structure of Fermi-level pinning. Physical Review Letters. 55: 959-962. PMID 10032493 DOI: 10.1103/Physrevlett.55.959 |
0.35 |
|
1985 |
Lagally MG. 5. Diffraction Techniques Methods in Experimental Physics. 22: 237-298. DOI: 10.1016/S0076-695X(08)60319-1 |
0.323 |
|
1984 |
Clearfield HM, Lagally MG. Initial ordering kinetics of a randomly stepped GaAs(110) surface Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 2: 844-846. DOI: 10.1116/1.572523 |
0.327 |
|
1983 |
Lagally MG. Analysis of surface structural defects using LEED and RHEED Ultramicroscopy. 11: 103-104. DOI: 10.1016/0304-3991(83)90224-3 |
0.358 |
|
1982 |
Lu T, Lagally MG. Phase Reeationships for Adsoreed Layers on Surfaces Mrs Proceedings. 19. DOI: 10.1557/Proc-19-313 |
0.346 |
|
1982 |
Lagally MG. The present status of low-energy electron diffraction Applications of Surface Science. 13: 260-281. DOI: 10.1016/0378-5963(82)90031-9 |
0.3 |
|
1981 |
Welkie DG, Lagally MG. Analysis of Surface Structural Defects by Low Energy Electron Diffraction Mrs Proceedings. 10. DOI: 10.1557/Proc-10-227 |
0.382 |
|
1981 |
Clearfield HM, Welkie DG, Lu T, Lagally MG. LEED investigation of extended defects at the surface of Ge films grown epitaxially on GaAs(110) Journal of Vacuum Science and Technology. 19: 323-330. DOI: 10.1116/1.571057 |
0.365 |
|
1981 |
Clearfield HM, Welkie DG, Lagally MG. Summary Abstract: Low‐energy electron diffraction study of the surface‐defect structure of Ge grown epitaxially on GaAs(110) Journal of Vacuum Science and Technology. 18: 802-803. DOI: 10.1116/1.570951 |
0.361 |
|
1981 |
Lagally MG, Welkie DG. Defect structures at solid surfaces Surface and Interface Analysis. 3: 8-11. DOI: 10.1002/Sia.740030106 |
0.317 |
|
1980 |
Lagally MG, Lu T‐, Welkie DG. Surface defects and thermodynamics of chemisorbed layers Journal of Vacuum Science and Technology. 17: 223-230. DOI: 10.1116/1.570442 |
0.308 |
|
1980 |
Lu T, Lagally M. The resolving power of a low-energy electron diffractometer and the analysis of surface defects Surface Science. 99: 695-713. DOI: 10.1016/0039-6028(80)90563-4 |
0.312 |
|
1978 |
Lagally MG, Wang G, Lu T. Chemisorption: Island formation and adatom interactions Critical Reviews in Solid State and Materials Sciences. 7: 233-259. DOI: 10.1080/10408437808243440 |
0.617 |
|
1978 |
Ramaker DE, Murday JS, Turner NH, Moore G, Lagally MG, Houston J. CALCULATED AND MEASURED AUGER LINESHAPES IN SiO//2 . 99-104. DOI: 10.1016/B978-0-08-023049-8.50023-3 |
0.344 |
|
1977 |
Moore G, Guckel H, Lagally MG. Auger investigation of boron‐doped SiO2/Si Journal of Vacuum Science and Technology. 14: 70-74. DOI: 10.1116/1.569176 |
0.403 |
|
1977 |
Guckel H, Larsen S, Lagally MG, Moore G, Miller JB, Wiley JD. Electromechanical devices utilizing thin Si diaphragms Applied Physics Letters. 31: 618-619. DOI: 10.1063/1.89802 |
0.349 |
|
1977 |
Houston JE, Moore G, Lagally MG. Transition density of states for Si(100) from L1L23V and L23VV Auger spectra Solid State Communications. 21: 879-882. DOI: 10.1016/0038-1098(77)90354-4 |
0.341 |
|
1974 |
Webb MB, Lagally MG. Elastic Scattering of Low-Energy Electrons from Surfaces Solid State Physics - Advances in Research and Applications. 28: 301-405. DOI: 10.1016/S0081-1947(08)60205-2 |
0.624 |
|
1974 |
Buchholz JC, Lagally MG, Webb MB. Fourier inversion of LEED data Surface Science. 41: 248-256. DOI: 10.1016/0039-6028(74)90307-0 |
0.608 |
|
1973 |
Ngoc TC, Lagally MG, Webb MB. A method to obtain kinematic intensities from low-energy electron diffraction data Surface Science. 35: 117-144. DOI: 10.1016/0039-6028(73)90208-2 |
0.632 |
|
1972 |
Lagally MG, Ngoc TC, Webb MB. Averaged Low-Energy Electron Diffraction Intensities from Ni(111) Journal of Vacuum Science and Technology. 9: 645-649. DOI: 10.1116/1.1317744 |
0.628 |
|
1971 |
Lagally MG, Ngoc TC, Webb MB. Kinematic low-energy electron-diffraction intensities from averaged data: A method for surface crystallography Physical Review Letters. 26: 1557-1560. DOI: 10.1103/Physrevlett.26.1557 |
0.634 |
|
1971 |
Lagally MG, Ngoc TC, Webb MB. Consequences of the reciprocity theorem in low-energy electron diffraction Surface Science. 25: 444-450. DOI: 10.1016/0039-6028(71)90263-9 |
0.613 |
|
1968 |
Barnes RF, Lagally MG, Webb MB. Multiphonon scattering of low-energy electrons Physical Review. 171: 627-633. DOI: 10.1103/Physrev.171.627 |
0.616 |
|
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