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Sanjay Rangan, Ph.D. - Publications

Affiliations: 
2001 Pennsylvania State University, State College, PA, United States 
Area:
Electronics and Electrical Engineering, Materials Science Engineering
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10 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2003 Rangan S, Horn M, Ashok S, Mohapatra YN. Influence of hydrogen plasma treatment on boron implanted junctions in silicon Journal of Vacuum Science & Technology B. 21: 781-784. DOI: 10.1116/1.1560331  0.556
2003 Rangan S, Ashok S, Chen G, Theodore D. Multi-layered nanocavities in silicon with sequential helium implantation/anneal Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 206: 417-421. DOI: 10.1016/S0168-583X(03)00780-8  0.537
2003 Rangan S, Horn M, Ashok S, Mohapatra YN. Influence of hydrogen plasma treatment on boron implanted junctions in silicon Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 21: 781-784.  0.367
2002 Sopori B, Zhang Y, Reedy R, Jones K, Ravindra NM, Rangan S, Ashok S. Trapping and Detrapping of H in Si: Impact on Diffusion Properties and Solar Cell Processing Mrs Proceedings. 719. DOI: 10.1557/Proc-719-F5.3  0.465
2002 Singh SP, Rao V, Mohapatra YN, Rangan S, Ashok S. Electrical Signature of Ion-Implantation Induced Defects in n-Silicon in the Defect Cluster Regime Studied using DLTS and Isothermal Transient Spectroscopies Mrs Proceedings. 719. DOI: 10.1557/Proc-719-F11.1  0.488
2002 Rangan S, Ashok S, Chen G, Theodore D. Helium-induced nanocavities in silicon: Formation and properties Proceedings of Spie - the International Society For Optical Engineering. 4746: 255-261.  0.404
2002 Singh SP, Rao V, Mohapatra YN, Rangan S, Ashok S. Electrical signature of ion-implantation induced defects in n-silicon in the defect cluster regime studied using DLTS and isothermal transient spectroscopies Materials Research Society Symposium - Proceedings. 719: 303-309.  0.343
2001 Rangan S, Ashok S, Chen G, Theodore D. Formation and characterization of multi-layered nanocavities in silicon with cascade helium implantation/anneal 2001 6th International Conference On Solid-State and Integrated Circuit Technology, Icsict 2001 - Proceedings. 2: 1360-1365. DOI: 10.1109/ICSICT.2001.982155  0.401
2000 Rangan S, Horn M, Ashok S. Boron implantation into silicon subject to hydrogen plasma Materials Research Society Symposium - Proceedings. 610. DOI: 10.1557/Proc-610-B5.7  0.554
1998 Rangan S, Ashok S, Krishnan S. A comparative study of anneal efficiencies of deuterium and hydrogen in plasma-processed transistors European Solid-State Device Research Conference. 564-567.  0.47
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