Year |
Citation |
Score |
2020 |
Islam Z, Haque A, Glavin NR, Xian M, Ren F, Polyakov AY, Kochkova AI, Tadjer M, Pearton SJ. In Situ Transmission Electron Microscopy Observations of Forward Bias Degradation of Vertical Geometry β-Ga2O3 Rectifiers Ecs Journal of Solid State Science and Technology. 9: 55008. DOI: 10.1149/2162-8777/Ab981D |
0.342 |
|
2020 |
Carey PH, Ren F, Bae J, Kim J, Pearton SJ. Proton Irradiation of High Aluminum Content AlGaN Polarization Doped Field Effect Transistors Ecs Journal of Solid State Science and Technology. 9: 25003. DOI: 10.1149/2162-8777/Ab71F0 |
0.301 |
|
2020 |
CareyIV PH, Ren F, Armstrong AM, Klein BA, Allerman AA, Douglas EA, Baca AG, Pearton SJ. High temperature operation to 500 °C of AlGaN graded polarization-doped field-effect transistors Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 38: 33202. DOI: 10.1116/1.5135590 |
0.694 |
|
2020 |
Pearton SJ, Douglas EA, Shul RJ, Ren F. Plasma etching of wide bandgap and ultrawide bandgap semiconductors Journal of Vacuum Science & Technology A. 38: 020802. DOI: 10.1116/1.5131343 |
0.673 |
|
2020 |
Islam Z, Xian M, Haque A, Ren F, Tadjer M, Glavin N, Pearton S. In Situ Observation of β-Ga2O3 Schottky Diode Failure Under Forward Biasing Condition Ieee Transactions On Electron Devices. 67: 3056-3061. DOI: 10.1109/Ted.2020.3000441 |
0.335 |
|
2020 |
Polyakov AY, Smirnov NB, Shchemerov IV, Vasilev A, Yakimov EB, Chernykh AV, Kochkova AI, lAGOV PB, Pavlov YS, Kukharchuk OF, Suvorov AA, Garanin NS, Lee I, Xian M, Ren F, ... Pearton SJ, et al. Pulsed fast reactor neutron irradiation effects in Si doped n-type β-Ga2O3 Journal of Physics D. 53: 274001. DOI: 10.1088/1361-6463/Ab83C4 |
0.376 |
|
2020 |
Modak S, Chernyak L, Xian M, Ren F, Pearton SJ, Khodorov S, Lubomirsky I, Ruzin A, Dashevsky Z. Impact of electron injection on carrier transport and recombination in unintentionally doped GaN Journal of Applied Physics. 128: 85702. DOI: 10.1063/5.0017742 |
0.336 |
|
2020 |
Baik KH, Jung S, Cho C, Park K, Ren F, Pearton SJ, Jang S. AlGaN/GaN heterostructure based Pt nanonetwork Schottky diode with water-blocking layer Sensors and Actuators B-Chemical. 317: 128234. DOI: 10.1016/J.Snb.2020.128234 |
0.611 |
|
2020 |
Pearton SJ, Norton DP, Ip K, Heo YW, Steiner T. Retraction notice to “Recent progress in processing and properties of ZnO” [Prog. Mater. Sci. 50(3) (2004) 293–340] Progress in Materials Science. 100669. DOI: 10.1016/J.Pmatsci.2020.100669 |
0.643 |
|
2020 |
Polyakov AY, Haller C, Butté R, Smirnov NB, Alexanyan LA, Kochkova AI, Shikoh SA, Shchemerov IV, Chernykh AV, Lagov PB, Pavlov YS, Carlin J-, Mosca M, Grandjean N, Pearton SJ. Deep traps in InGaN/GaN single quantum well structures grown with and without InGaN underlayers Journal of Alloys and Compounds. 845: 156269. DOI: 10.1016/J.Jallcom.2020.156269 |
0.387 |
|
2019 |
Ren F, Yang JC, Fares C, Pearton SJ. Device processing and junction formation needs for ultra-high power Ga 2 O 3 electronics Mrs Communications. 9: 77-87. DOI: 10.1557/Mrc.2019.4 |
0.403 |
|
2019 |
Kang T, Lo C, Liu L, Finch R, Ren F, Wang X, Douglas E, Pearton SJ, Hung S, Chang C. Thermal Simulation of 193 nm UV-Laser Lift-Off AlGaN/GaN High Electron Mobility Transistors Mounted on AlN Substrates Ecs Transactions. 41: 129-136. DOI: 10.1149/1.3629961 |
0.633 |
|
2019 |
Baik KH, Lim W, Pearton S, Wang Y, Ren F, Yang J, Jang S. a-Plane GaN for Hydrogen Sensing Applications Ecs Transactions. 28: 89-93. DOI: 10.1149/1.3377104 |
0.688 |
|
2019 |
Lim W, Wang Y, Lee J, Norton DP, Ren F, Pearton SJ. High Performacne InGaZnO4-based Thin film Transistors Fabricated at Low Temperature Ecs Transactions. 16: 303-308. DOI: 10.1149/1.2980567 |
0.633 |
|
2019 |
Lim W, Stafford L, Gila B, Norton D, Pearton S, Ren F, Song J, Park J, Heo Y, Lee J, Kim J. High Density Inductively Coupled Plasma Etching of Zinc-Oxide(ZnO) and Indium-Zinc Oxide(IZO) Ecs Transactions. 6: 239-247. DOI: 10.1149/1.2731191 |
0.593 |
|
2019 |
Pearton SJ, Chakrabarti UK, Lane E, Perley AP, Abernathy CR, Hobson WS, Jones KS. Characteristics of III‐V Dry Etching In HBr ‐ Based Discharges Journal of the Electrochemical Society. 139: 856-864. DOI: 10.1149/1.2069316 |
0.35 |
|
2019 |
Lee JW, Hays D, Abernathy CR, Pearton SJ, Hobson WS, Constantine C. Inductively Coupled Ar Plasma Damage in AlGaAs Journal of the Electrochemical Society. 144: L245-L247. DOI: 10.1149/1.1837932 |
0.321 |
|
2019 |
Lee JW, Abernathy CR, Pearton SJ, Ren F, Hobson WS, Shul RJ, Constantine C, Barratt C. Inductively Coupled Plasma Etch Damage in GaAs and InP Schottky Diodes Journal of the Electrochemical Society. 144: 1417-1422. DOI: 10.1149/1.1837604 |
0.345 |
|
2019 |
Vartuli CB, Pearton SJ, Lee JW, Abernathy CR, Mackenzie JD, Zolper JC, Shul RJ, Ren F. Wet Chemical Etching of AlN and InAlN in KOH Solutions Journal of the Electrochemical Society. 143: 3681-3684. DOI: 10.1149/1.1837271 |
0.364 |
|
2019 |
Hong J, Lee JW, Lambers ES, Abernathy CR, Pearton SJ, Constantine C, Hobson WS. Comparison of ICl and IBr Plasma Chemistries for Etching of InGaAlP Alloys Journal of the Electrochemical Society. 143: 3656-3661. DOI: 10.1149/1.1837267 |
0.347 |
|
2019 |
Gillis HP, Choutov DA, Martin KP, Pearton SJ, Abernathy CR. Low Energy Electron‐Enhanced Etching of GaN/Si in Hydrogen Direct Current Plasma Journal of the Electrochemical Society. 143: L251-L253. DOI: 10.1149/1.1837223 |
0.406 |
|
2019 |
Shul RJ, Howard AJ, Pearton SJ, Abernathy CR, Vartuli CB. High‐Density Etching of Group III Nitride Ternary Films Journal of the Electrochemical Society. 143: 3285-3290. DOI: 10.1149/1.1837199 |
0.408 |
|
2019 |
Lee JW, Pearton SJ, Santana CJ, Mileham JR, Lambers ES, Abernathy CR, Ren F, Hobson WS. High Ion Density Plasma Etching of InGaP, AlInP, and AlGaP in CH 4 / H 2 / Ar Journal of the Electrochemical Society. 143: 1093-1098. DOI: 10.1149/1.1836589 |
0.328 |
|
2019 |
Meyer LC, Lee JW, Johnson D, Huang M, Ren F, Anderson TJ, LaRoche JR, Lothian JR, Abernathy CR, Pearton SJ. Study of NH 3 Plasma Damage on GaAs Schottky Diode in Inductively Coupled Plasma System Journal of the Electrochemical Society. 146: 2717-2719. DOI: 10.1149/1.1391998 |
0.402 |
|
2019 |
Xian M, Fares C, Ren F, Gila BP, Chen Y, Liao Y, Tadjer M, Pearton SJ. Effect of thermal annealing for W/β-Ga2O3 Schottky diodes up to 600 °C Journal of Vacuum Science & Technology B. 37: 061201. DOI: 10.1116/1.5125006 |
0.456 |
|
2019 |
Carey PH, Pearton SJ, Ren F, Baca AG, Klein BA, Allerman AA, Armstrong AM, Douglas EA, Kaplar RJ, Kotula PG. Extreme Temperature Operation of Ultra-Wide Bandgap AlGaN High Electron Mobility Transistors Ieee Transactions On Semiconductor Manufacturing. 32: 473-477. DOI: 10.1109/Tsm.2019.2932074 |
0.707 |
|
2019 |
Carey PH, Pearton SJ, Ren F, Baca AG, Klein BA, Allerman AA, Armstrong AM, Douglas EA, Kaplar RJ, Kotula PG. Operation Up to 500 °C of Al0.85Ga0.15N/Al0.7Ga0.3N High Electron Mobility Transistors Ieee Journal of the Electron Devices Society. 7: 444-452. DOI: 10.1109/Jeds.2019.2907306 |
0.681 |
|
2019 |
Polyakov AY, Haller C, Smirnov NB, Shiko AS, Shchemerov IV, Chernykh SV, Alexanyan LA, Lagov PB, Pavlov YS, Carlin J-, Mosca M, Butté R, Grandjean N, Pearton SJ. Effects of InAlN underlayer on deep traps detected in near-UV InGaN/GaN single quantum well light-emitting diodes Journal of Applied Physics. 126: 125708. DOI: 10.1063/1.5122314 |
0.351 |
|
2019 |
Yang J, Xian M, Carey P, Fares C, Partain J, Ren F, Tadjer M, Anber E, Foley D, Lang A, Hart J, Nathaniel J, Taheri ML, Pearton SJ, Kuramata A. Vertical geometry 33.2 A, 4.8 MW cm2 Ga2O3 field-plated Schottky rectifier arrays Applied Physics Letters. 114: 232106. DOI: 10.1063/1.5100256 |
0.358 |
|
2019 |
Polyakov AY, Shmidt NM, Smirnov NB, Shchemerov IV, Shabunina EI, Tal’nishnih NA, Lee I, Alexanyan LA, Tarelkin SA, Pearton SJ. Deep trap analysis in green light emitting diodes: Problems and solutions Journal of Applied Physics. 125: 215701. DOI: 10.1063/1.5093723 |
0.374 |
|
2019 |
Modak S, Lee J, Chernyak L, Yang J, Ren F, Pearton SJ, Khodorov S, Lubomirsky I. Electron injection-induced effects in Si-doped β-Ga2O3 Aip Advances. 9: 015127. DOI: 10.1063/1.5079730 |
0.323 |
|
2019 |
Fares C, Ren F, Lambers E, Hays DC, Gila BP, Pearton SJ. Valence- and Conduction-Band Offsets for Atomic-Layer-Deposited Al2O3 on (010) (Al0.14Ga0.86)2O3 Journal of Electronic Materials. 48: 1568-1573. DOI: 10.1007/S11664-018-06885-X |
0.34 |
|
2019 |
Lee G, Pearton SJ, Ren F, Kim J. Heterojunction Bipolar Transistor: 2D Material-Based Vertical Double Heterojunction Bipolar Transistors with High Current Amplification (Adv. Electron. Mater. 3/2019) Advanced Electronic Materials. 5: 1970015. DOI: 10.1002/Aelm.201970015 |
0.31 |
|
2018 |
Lee G, Pearton SJ, Ren F, Kim J. Two-dimensionally layered p-black phosphorus/n-MoS/p-black phosphorus Heterojunctions. Acs Applied Materials & Interfaces. PMID 29485269 DOI: 10.1021/Acsami.7B19334 |
0.343 |
|
2018 |
Jang S, Jung S, Kim J, Ren F, Pearton SJ, Baik KH. Hydrogen Sensing Characteristics of Pt Schottky Diodes on () and (010) Ga2O3Single Crystals Ecs Journal of Solid State Science and Technology. 7: Q3180-Q3182. DOI: 10.1149/2.0261807Jss |
0.557 |
|
2018 |
Polyakov AY, Shmidt NM, Smirnov NB, Shchemerov IV, Shabunina EI, Tal'nishnih NA, Lagov PB, Pavlov YS, Alexanyan LA, Pearton SJ. Defect States Induced in GaN-Based Green Light Emitting Diodes by Electron Irradiation Ecs Journal of Solid State Science and Technology. 7: 323-328. DOI: 10.1149/2.0211806Jss |
0.3 |
|
2018 |
Polyakov AY, Smirnov NB, Shchemerov IV, Yang J, Ren F, Lo C, Laboutin O, Johnson JW, Pearton SJ. Trapping Phenomena in InAlN/GaN High Electron Mobility Transistors Ecs Journal of Solid State Science and Technology. 7: Q1-Q7. DOI: 10.1149/2.0131802Jss |
0.323 |
|
2018 |
Jung S, Baik KH, Ren F, Pearton SJ, Jang S. AlGaN/GaN Heterostructure Based Schottky Diode Sensors with ZnO Nanorods for Environmental Ammonia Monitoring Applications Ecs Journal of Solid State Science and Technology. 7: Q3020-Q3024. DOI: 10.1149/2.0041807Jss |
0.575 |
|
2018 |
Baik KH, Jung S, Ren F, Pearton SJ, Jang S. Moisture Insensitive PMMA Coated Pt-AlGaN/GaN Diode Hydrogen Sensor and Its Thermal Stability Ecs Journal of Solid State Science and Technology. 7: Q3009-Q3013. DOI: 10.1149/2.002107Jss |
0.566 |
|
2018 |
Yang J, Sparks Z, Ren F, Pearton SJ, Tadjer M. Effect of surface treatments on electrical properties of β-Ga2O3 Journal of Vacuum Science & Technology B. 36: 061201. DOI: 10.1116/1.5052229 |
0.373 |
|
2018 |
Fares C, Ren F, Pearton SJ, Yang G, Kim J, Lo C, Johnson JW. Effect of proton irradiation energy on SiNx/AlGaN/GaN metal-insulator semiconductor high electron mobility transistors Journal of Vacuum Science & Technology B. 36: 052202. DOI: 10.1116/1.5049596 |
0.389 |
|
2018 |
Fares C, Ren F, Pearton SJ, Yang G, Kim J, Lo C, Wayne Johnson J. Effect of alpha-particle irradiation dose on SiNx/AlGaN/GaN metal–insulator semiconductor high electron mobility transistors Journal of Vacuum Science & Technology B. 36: 041203. DOI: 10.1116/1.5042261 |
0.349 |
|
2018 |
Yang J, Chen Z, Ren F, Pearton SJ, Yang G, Kim J, Lee J, Flitsiyan E, Chernyak L, Kuramata A. 10 MeV proton damage in β-Ga2O3 Schottky rectifiers Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 36: 011206. DOI: 10.1116/1.5013155 |
0.398 |
|
2018 |
Pearton SJ, Ren F, Tadjer M, Kim J. Perspective: Ga2O3for ultra-high power rectifiers and MOSFETS Journal of Applied Physics. 124: 220901. DOI: 10.1063/1.5062841 |
0.345 |
|
2018 |
Polyakov AY, Smirnov NB, Shchemerov IV, Yakimov EB, Pearton SJ, Fares C, Yang J, Ren F, Kim JH, Lagov PB, Stolbunov VS, Kochkova A. Defects responsible for charge carrier removal and correlation with deep level introduction in irradiated β-Ga2O3 Applied Physics Letters. 113: 92102. DOI: 10.1063/1.5049130 |
0.318 |
|
2018 |
Yang J, Ren F, Tadjer M, Pearton SJ, Kuramata A. Ga2O3 Schottky rectifiers with 1 ampere forward current, 650 V reverse breakdown and 26.5 MW.cm-2 figure-of-merit Aip Advances. 8: 055026. DOI: 10.1063/1.5034444 |
0.346 |
|
2018 |
Yakimov EB, Polyakov AY, Smirnov NB, Shchemerov IV, Yang J, Ren F, Yang G, Kim JH, Pearton SJ. Diffusion length of non-equilibrium minority charge carriers in β-Ga2O3 measured by electron beam induced current Journal of Applied Physics. 123: 185704. DOI: 10.1063/1.5027559 |
0.324 |
|
2018 |
Polyakov AY, Smirnov NB, Shchemerov IV, Yakimov EB, Yang J, Ren F, Yang G, Kim JH, Kuramata A, Pearton SJ. Point defect induced degradation of electrical properties of Ga2O3 by 10 MeV proton damage Applied Physics Letters. 112: 32107. DOI: 10.1063/1.5012993 |
0.371 |
|
2018 |
Lee J, Flitsiyan E, Chernyak L, Yang J, Ren F, Pearton SJ, Meyler B, Salzman YJ. Effect of 1.5 MeV electron irradiation on β-Ga2O3 carrier lifetime and diffusion length Applied Physics Letters. 112: 082104. DOI: 10.1063/1.5011971 |
0.324 |
|
2018 |
Pearton SJ, Yang J, Cary PH, Ren F, Kim J, Tadjer MJ, Mastro MA. A review of Ga2O3materials, processing, and devices Applied Physics Reviews. 5: 011301. DOI: 10.1063/1.5006941 |
0.362 |
|
2018 |
Yakimov EB, Polyakov AY, Lee I, Pearton SJ. Recombination properties of dislocations in GaN Journal of Applied Physics. 123: 161543. DOI: 10.1063/1.4995580 |
0.342 |
|
2018 |
Jang S, Jung S, Beers K, Yang J, Ren F, Kuramata A, Pearton S, Baik KH. A comparative study of wet etching and contacts on (2¯01) and (010) oriented β-Ga2O3 Journal of Alloys and Compounds. 731: 118-125. DOI: 10.1016/J.Jallcom.2017.09.336 |
0.634 |
|
2017 |
Yang G, Jang S, Ren F, Pearton SJ, Kim J. Influence of high-energy proton irradiation on β-Ga2O3 nanobelt field-effect transistors. Acs Applied Materials & Interfaces. PMID 29083157 DOI: 10.1021/Acsami.7B13881 |
0.3 |
|
2017 |
Carey PH, Ren F, Hays DC, Gila BP, Pearton SJ, Jang S, Kuramata A. Band alignment of atomic layer deposited SiO2and HfSiO4with $(\bar{2}01)$ β-Ga2O3 Japanese Journal of Applied Physics. 56: 071101. DOI: 10.7567/Jjap.56.071101 |
0.301 |
|
2017 |
Jung S, Baik KH, Ren F, Pearton SJ, Jang S. Silver-Functionalized AlGaN/GaN Heterostructure Diode for Ethanol Sensing Journal of the Electrochemical Society. 164: B417-B420. DOI: 10.1149/2.0781709Jes |
0.544 |
|
2017 |
Ren F, Pearton SJ, Ahn S, Lin Y, Machuca F, Weiss R, Welsh A, McCartney MR, Smith DJ, Kravchenko II. AlGaN/GaN High Electron Mobility Transistor Grown and Fabricated on ZrTi Metallic Alloy Buffer Layers Ecs Journal of Solid State Science and Technology. 6: S3078-S3080. DOI: 10.1149/2.0161711Jss |
0.349 |
|
2017 |
Polyakov AY, Smirnov NB, Shchemerov IV, Ren F, Pearton SJ. Gate-Lag in AlGaN/GaN High Electron Mobility Transistors: A Model of Charge Capture Ecs Journal of Solid State Science and Technology. 6. DOI: 10.1149/2.0091711Jss |
0.315 |
|
2017 |
Ren F, Pearton SJ, Kang TS, Cheney DJ, Gila BP. Use of sub-bandgap optical pumping to identify defects in AlGaN/GaN high electron mobility transistors (Conference Presentation) Proceedings of Spie. 10104. DOI: 10.1117/12.2251166 |
0.35 |
|
2017 |
Carey PH, Yang J, Ren F, Hays DC, Pearton SJ, Kuramata A, Kravchenko II. Improvement of Ohmic contacts on Ga2O3through use of ITO-interlayers Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 35: 061201. DOI: 10.1116/1.4995816 |
0.402 |
|
2017 |
Jung S, Baik KH, Ren F, Pearton SJ, Jang S. Detection of ammonia at low concentrations (0.1–2 ppm) with ZnO nanorod-functionalized AlGaN/GaN high electron mobility transistors Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 35: 042201. DOI: 10.1116/1.4989370 |
0.637 |
|
2017 |
Yang J, Ren F, Khanna R, Bevlin K, Geerpuram D, Tung L, Lin J, Jiang H, Lee J, Flitsiyan E, Chernyak L, Pearton SJ, Kuramata A. Annealing of dry etch damage in metallized and bare (-201) Ga2O3 Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 35: 51201. DOI: 10.1116/1.4986300 |
0.425 |
|
2017 |
Carey PH, Ren F, Hays DC, Gila BP, Pearton SJ, Jang S, Kuramata A. Conduction and valence band offsets of LaAl2O3 with (−201) β-Ga2O3 Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 35: 041201. DOI: 10.1116/1.4984097 |
0.333 |
|
2017 |
Yang J, Ren F, Pearton SJ, Yang G, Kim J, Kuramata A. 1.5 MeV electron irradiation damage in β-Ga2O3 vertical rectifiers Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 35: 031208. DOI: 10.1116/1.4983377 |
0.357 |
|
2017 |
Yang J, Ahn S, Ren F, Pearton S, Khanna R, Bevlin K, Geerpuram D, Kuramata A. Inductively coupled plasma etching of bulk, single-crystal Ga2O3 Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 35: 31205. DOI: 10.1116/1.4982714 |
0.327 |
|
2017 |
Polyakov AY, Smirnov NB, Shchemerov IV, Lee I, Jang T, Dorofeev AA, Gladysheva NB, Kondratyev ES, Turusova YA, Zinovyev RA, Turutin AV, Ren F, Pearton SJ. Current relaxation analysis in AlGaN/GaN high electron mobility transistors Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 35: 011207. DOI: 10.1116/1.4973973 |
0.327 |
|
2017 |
Hays DC, Gila BP, Pearton SJ, Trucco A, Thorpe R, Ren F. Effect of deposition conditions and composition on band offsets in atomic layer deposited HfxSi1−xOy on InGaZnO4 Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 35: 011206. DOI: 10.1116/1.4973882 |
0.371 |
|
2017 |
Yang J, Ahn S, Ren F, Pearton SJ, Jang S, Kuramata A. High Breakdown Voltage (−201) $\beta $ -Ga2O3 Schottky Rectifiers Ieee Electron Device Letters. 38: 906-909. DOI: 10.1109/Led.2017.2703609 |
0.383 |
|
2017 |
Jung S, Baik KH, Ren F, Pearton SJ, Jang S. Pt-AlGaN/GaN Hydrogen Sensor With Water-Blocking PMMA Layer Ieee Electron Device Letters. 38: 657-660. DOI: 10.1109/Led.2017.2681114 |
0.576 |
|
2017 |
Jung S, Baik KH, Ren F, Pearton SJ, Jang S. Temperature and Humidity Dependence of Response of PMGI-Encapsulated Pt-AlGaN/GaN Diodes for Hydrogen Sensing Ieee Sensors Journal. 17: 5817-5822. DOI: 10.1109/Jsen.2017.2733343 |
0.625 |
|
2017 |
Lee J, Yadav A, Antia M, Zaffino V, Flitsiyan E, Chernyak L, Salzman J, Meyler B, Ahn S, Ren F, Pearton SJ. Low dose 60Co gamma-irradiation effects on electronic carrier transport and DC characteristics of AlGaN/GaN high-electron-mobility transistors Radiation Effects and Defects in Solids. 172: 250-256. DOI: 10.1080/10420150.2017.1300903 |
0.364 |
|
2017 |
Yang J, Carey P, Ren F, Wang Y, Good ML, Jang S, Mastro MA, Pearton SJ. Rapid detection of cardiac troponin I using antibody-immobilized gate-pulsed AlGaN/GaN high electron mobility transistor structures Applied Physics Letters. 111: 202104. DOI: 10.1063/1.5011151 |
0.301 |
|
2017 |
Lee I, Polyakov AY, Smirnov NB, Shchemerov IV, Lagov PB, Zinov'ev RA, Yakimov EB, Shcherbachev KD, Pearton SJ. Point defects controlling non-radiative recombination in GaN blue light emitting diodes: Insights from radiation damage experiments Journal of Applied Physics. 122: 115704. DOI: 10.1063/1.5000956 |
0.339 |
|
2017 |
Carey PH, Yang J, Ren F, Hays DC, Pearton SJ, Jang S, Kuramata A, Kravchenko II. Ohmic contacts on n-type β-Ga2O3 using AZO/Ti/Au Aip Advances. 7: 095313. DOI: 10.1063/1.4996172 |
0.418 |
|
2017 |
Lee I, Polyakov AY, Hwang SM, Shmidt NM, Shabunina EI, Tal'Nishnih NA, Smirnov NB, Shchemerov IV, Zinovyev RA, Tarelkin SA, Pearton SJ. Degradation-induced low frequency noise and deep traps in GaN/InGaN near-UV LEDs Applied Physics Letters. 111: 62103. DOI: 10.1063/1.4985190 |
0.374 |
|
2017 |
Lee I, Polyakov AY, Smirnov NB, Zinovyev RA, Bae K, Chung T, Hwang S, Baek JH, Pearton SJ. Changes in electron and hole traps in GaN-based light emitting diodes from near-UV to green spectral ranges Applied Physics Letters. 110: 192107. DOI: 10.1063/1.4983556 |
0.329 |
|
2017 |
Yang J, Ahn S, Ren F, Pearton SJ, Jang S, Kim J, Kuramata A. High reverse breakdown voltage Schottky rectifiers without edge termination on Ga2O3 Applied Physics Letters. 110: 192101. DOI: 10.1063/1.4983203 |
0.377 |
|
2017 |
Hays DC, Gila BP, Pearton SJ, Ren F. Energy band offsets of dielectrics on InGaZnO4 Applied Physics Reviews. 4: 021301. DOI: 10.1063/1.4980153 |
0.374 |
|
2017 |
Yang J, Ahn S, Ren F, Khanna R, Bevlin K, Geerpuram D, Pearton SJ, Kuramata A. Inductively coupled plasma etch damage in (-201) Ga2O3 Schottky diodes Applied Physics Letters. 110: 142101. DOI: 10.1063/1.4979592 |
0.366 |
|
2017 |
Kwon Y, Lee G, Oh S, Kim J, Pearton SJ, Ren F. Tuning the thickness of exfoliated quasi-two-dimensional β-Ga2O3 flakes by plasma etching Applied Physics Letters. 110: 131901. DOI: 10.1063/1.4979028 |
0.307 |
|
2017 |
Lee I, Polyakov AY, Yakimov EB, Smirnov NB, Shchemerov IV, Tarelkin SA, Didenko SI, Tapero KI, Zinovyev RA, Pearton SJ. Defects responsible for lifetime degradation in electron irradiated n-GaN grown by hydride vapor phase epitaxy Applied Physics Letters. 110: 112102. DOI: 10.1063/1.4978641 |
0.372 |
|
2017 |
Lee I, Cho H, Bae KB, Polyakov AY, Smirnov NB, Zinovyev RA, Baek JH, Chung T, Shchemerov IV, Kondratyev ES, Pearton SJ. Effect of nanopillar sublayer embedded with SiO2 on deep traps in green GaN/InGaN light emitting diodes Journal of Applied Physics. 121: 045108. DOI: 10.1063/1.4974971 |
0.386 |
|
2017 |
Carey PH, Ren F, Hays DC, Gila B, Pearton S, Jang S, Kuramata A. Valence and conduction band offsets in AZO/Ga2O3 heterostructures Vacuum. 141: 103-108. DOI: 10.1016/J.Vacuum.2017.03.031 |
0.326 |
|
2017 |
Whiting P, Rudawski N, Holzworth M, Pearton S, Jones K, Liu L, Kang T, Ren F. Nanocrack formation in AlGaN/GaN high electron mobility transistors utilizing Ti/Al/Ni/Au ohmic contacts Microelectronics Reliability. 70: 41-48. DOI: 10.1016/J.Microrel.2017.02.005 |
0.351 |
|
2017 |
Carey PH, Ren F, Hays DC, Gila B, Pearton S, Jang S, Kuramata A. Band offsets in ITO/Ga2O3 heterostructures Applied Surface Science. 422: 179-183. DOI: 10.1016/J.Apsusc.2017.05.262 |
0.35 |
|
2017 |
Lee I, Polyakov AY, Smirnov NB, Shchemerov IV, Shmidt NM, Tal'nishnih NA, Shabunina EI, Cho H, Hwang S, Zinovyev RA, Didenko SI, Lagov PB, Pearton SJ. Electron irradiation of near-UV GaN/InGaN light emitting diodes Physica Status Solidi (a). 214: 1700372. DOI: 10.1002/Pssa.201700372 |
0.343 |
|
2016 |
Yakimov EB, Vergeles PS, Polyakov AY, Lee I, Pearton SJ. Radiation enhanced basal plane dislocation glide in GaN Japanese Journal of Applied Physics. 55: 05FM03. DOI: 10.7567/Jjap.55.05Fm03 |
0.313 |
|
2016 |
Lee I, Polyakov AY, Smirnov NB, Yakimov EB, Tarelkin SA, Turutin AV, Shemerov IV, Pearton SJ. Electron traps as major recombination centers in n-GaN films grown by metalorganic chemical vapor deposition Applied Physics Express. 9: 61002. DOI: 10.7567/Apex.9.061002 |
0.381 |
|
2016 |
Pearton SJ, Ren F, Patrick E, Law ME, Polyakov AY. Review - Ionizing radiation damage effects on GaN devices Ecs Journal of Solid State Science and Technology. 5: Q35-Q60. DOI: 10.1149/2.0251602Jss |
0.36 |
|
2016 |
Polyakov AY, Smirnov NB, Dorofeev AA, Gladysheva NB, Kondratyev ES, Shemerov IV, Turutin AV, Ren F, Pearton SJ. Deep Traps in AlGaN/GaN High Electron Mobility Transistors on SiC Ecs Journal of Solid State Science and Technology. 5: Q260-Q265. DOI: 10.1149/2.0191610Jss |
0.345 |
|
2016 |
Ren F, Pearton SJ, Ahn S, Lin YH, Machuca F, Weiss R, Welsh A, McCartney MR, Smith DJ, Kravchenko II. Evaluation of AlGaN/GaN high electron mobility transistors grown on ZrTi buffer layers with sapphire substrates Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 34. DOI: 10.1116/1.4963064 |
0.366 |
|
2016 |
Ahn S, Kim BJ, Lin YH, Ren F, Pearton SJ, Yang G, Kim J, Kravchenko II. Effect of proton irradiation dose on InAlN/GaN metal-oxide semiconductor high electron mobility transistors with Al2O3 gate oxide Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 34. DOI: 10.1116/1.4959786 |
0.379 |
|
2016 |
Kim B, Ahn S, Ren F, Pearton SJ, Yang G, Kim J. Effects of proton irradiation and thermal annealing on off-state step-stressed AlGaN/GaN high electron mobility transistors Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 34: 041231. DOI: 10.1116/1.4959028 |
0.333 |
|
2016 |
Lim W, Kum H, Choi YJ, Sim SH, Yeon JH, Kim JS, Seong HK, Cha NG, Kim YI, Park YS, Yoo G, Pearton SJ. SiO2 nanohole arrays with high aspect ratio for InGaN/GaN nanorod-based phosphor-free white light-emitting-diodes Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 34. DOI: 10.1116/1.4959027 |
0.685 |
|
2016 |
Polyakov AY, Smirnov NB, Turutin AV, Shemerov IS, Ren F, Pearton SJ, Johnson JW. Deep traps and instabilities in AlGaN/GaN high electron mobility transistors on Si substrates Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 34: 41216. DOI: 10.1116/1.4953347 |
0.414 |
|
2016 |
Ahn S, Lin Y, Ren F, Oh S, Jung Y, Yang G, Kim J, Mastro MA, Hite JK, Eddy CR, Pearton SJ. Effect of 5 MeV proton irradiation damage on performance of β-Ga2O3 photodetectors Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 34: 041213. DOI: 10.1116/1.4950872 |
0.314 |
|
2016 |
Kang TS, Lin YH, Ahn S, Ren F, Gila BP, Pearton SJ, Cheney DJ. Identification of trap locations in AlGaN/GaN high electron mobility transistors by varying photon flux during sub-bandgap optical pumping Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 34. DOI: 10.1116/1.4936861 |
0.308 |
|
2016 |
Ahn S, Ren F, Patrick E, Law ME, Pearton SJ, Kuramata A. Deuterium incorporation and diffusivity in plasma-exposed bulk Ga2O3 Applied Physics Letters. 109: 242108. DOI: 10.1063/1.4972265 |
0.355 |
|
2016 |
Lee I, Polyakov AY, Smirnov NB, Yakimov EB, Tarelkin SA, Turutin AV, Shemerov IV, Pearton SJ. Studies of deep level centers determining the diffusion length in epitaxial layers and crystals of undoped n-GaN Journal of Applied Physics. 119: 205109. DOI: 10.1063/1.4952734 |
0.384 |
|
2016 |
Polyakov AY, Smirnov NB, Yakimov EB, Lee IH, Pearton SJ. Electrical, luminescent, and deep trap properties of Si doped n-GaN grown by pendeo epitaxy Journal of Applied Physics. 119. DOI: 10.1063/1.4939649 |
0.412 |
|
2016 |
Morrow WK, Lee C, Denbaars SP, Ren F, Pearton SJ. Role of graphene interlayers in mitigating degradation of Ni/Au ohmic contact morphology on p-type GaN Vacuum. 128: 34-38. DOI: 10.1016/J.Vacuum.2016.03.004 |
0.355 |
|
2016 |
Hays DC, Gila BP, Pearton SJ, Kim BJ, Ren F. Band alignment in ZrSiO4/ZnO heterojunctions Vacuum. 125: 113-117. DOI: 10.1016/J.Vacuum.2015.12.010 |
0.336 |
|
2016 |
Polyakov AY, Smirnov NB, Yakimov EB, Tarelkin SA, Turutin AV, Shemerov IV, Pearton SJ, Bae KB, Lee IH. Deep traps determining the non-radiative lifetime and defect band yellow luminescence in n-GaN Journal of Alloys and Compounds. 686: 1044-1052. DOI: 10.1016/J.Jallcom.2016.06.297 |
0.385 |
|
2015 |
Yadav A, Flitsiyan E, Chernyak L, Ren F, Pearton SJ, Johnson JW, Lubomirsky I. Impact of low dose gamma irradiation on electronic carrier transport in AlGaN/GaN High Electron Mobility Transistors Mrs Proceedings. 1792. DOI: 10.1557/Opl.2015.511 |
0.349 |
|
2015 |
Patrick EE, Choudhury M, Ren F, Pearton SJ, Law ME. Simulation of radiation effects in AlGaN/GaN HEMTs Ecs Transactions. 66: 21-31. DOI: 10.1149/2.0181503Jss |
0.324 |
|
2015 |
Hays DC, Gila BP, Pearton SJ, Ren F. Band offsets in HfSiO4/IGZO heterojunctions Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 33: 061209. DOI: 10.1116/1.4936117 |
0.355 |
|
2015 |
Polyakov AY, Smirnov NB, Lee IH, Pearton SJ. Deep level transient spectroscopy in III-Nitrides: Decreasing the effects of series resistance Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 33. DOI: 10.1116/1.4932013 |
0.316 |
|
2015 |
Hays DC, Gila BP, Pearton SJ, Kim BJ, Ren F, Jang TS. Band offsets in Sc2O3/ZnO heterostructures deposited by RF magnetron sputtering Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 33. DOI: 10.1116/1.4931035 |
0.373 |
|
2015 |
Kim BJ, Hwang YH, Ahn S, Ren F, Pearton SJ, Kim J, Jang TS. Effects of 340keV proton irradiation on InGaN/GaN blue light-emitting diodes Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 33. DOI: 10.1116/1.4930297 |
0.314 |
|
2015 |
Ahn S, Dong C, Zhu W, Kim BJ, Hwang YH, Ren F, Pearton SJ, Yang G, Kim J, Patrick E, Tracy B, Smith DJ, Kravchenko II. Effect of proton irradiation energy on AlGaN/GaN metal-oxide semiconductor high electron mobility transistors Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 33. DOI: 10.1116/1.4928730 |
0.359 |
|
2015 |
Hwang YH, Dong C, Hsieh YL, Zhu W, Ahn S, Ren F, Pearton SJ, Kravchenko II. Improvement of drain breakdown voltage with a back-side gate on AlGaN/GaN high electron mobility transistors Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 33. DOI: 10.1116/1.4922022 |
0.4 |
|
2015 |
Ahn S, Zhu W, Dong C, Le L, Hwang YH, Kim BJ, Ren F, Pearton SJ, Lind AG, Jones KS, Kravchenko II, Zhang ML. Study of the effects of GaN buffer layer quality on the dc characteristics of AlGaN/GaN high electron mobility transistors Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 33. DOI: 10.1116/1.4918715 |
0.365 |
|
2015 |
Kim B, Ahn S, Hwang Y, Ren F, Pearton SJ, Kim J, Zhang M. Investigating the effect of thermal annealing on dc performance of off-state drain-voltage step-stressed AlGaN/GaN high electron mobility transistors Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 33: 031204. DOI: 10.1116/1.4916882 |
0.378 |
|
2015 |
Yin W, Smithe K, Weiser P, Stavola M, Fowler WB, Boatner L, Pearton SJ, Hays DC, Koch SG. Hydrogen centers and the conductivity of i n2 O3 single crystals Physical Review B - Condensed Matter and Materials Physics. 91. DOI: 10.1103/Physrevb.91.075208 |
0.314 |
|
2015 |
Yadav A, Flitsiyan E, Chernyak L, Hwang Y, Hsieh Y, Lei L, Ren F, Pearton SJ, Lubomirsky I. Low and moderate dose gamma-irradiation and annealing impact on electronic and electrical properties of AlGaN/GaN high electron mobility transistors Radiation Effects and Defects in Solids. 170: 377-385. DOI: 10.1080/10420150.2015.1010170 |
0.375 |
|
2015 |
Kim BJ, Hwang YH, Ahn S, Zhu W, Dong C, Lu L, Ren F, Holzworth MR, Jones KS, Pearton SJ, Smith DJ, Kim J, Zhang ML. Recovery in dc and rf performance of off-state step-stressed AlGaN/GaN high electron mobility transistors with thermal annealing Applied Physics Letters. 106. DOI: 10.1063/1.4918530 |
0.359 |
|
2015 |
Yakimov EB, Vergeles PS, Polyakov AY, Lee I, Pearton SJ. Movement of basal plane dislocations in GaN during electron beam irradiation Applied Physics Letters. 106: 132101. DOI: 10.1063/1.4916632 |
0.301 |
|
2015 |
Hays DC, Gila BP, Lambers ES, Pearton SJ, Ren F. Valence and conduction band offsets in sputtered HfO2/InGaZnO4 heterostructures Vacuum. 116: 60-64. DOI: 10.1016/J.Vacuum.2015.02.017 |
0.342 |
|
2015 |
Pearton SJ, Hwang YS, Ren F. Radiation Effects in GaN-Based High Electron Mobility Transistors Jom. DOI: 10.1007/S11837-015-1359-Y |
0.371 |
|
2014 |
Kim JK, Kim KW, Douglas EA, Gila BP, Craciun V, Lambers ES, Norton DP, Ren F, Pearton SJ, Cho H. Band offsets in YSZ/InGaZnO4 heterostructure system. Journal of Nanoscience and Nanotechnology. 14: 3925-7. PMID 24734665 DOI: 10.1166/Jnn.2014.7939 |
0.645 |
|
2014 |
Kim H, Baik KH, Ren F, Pearton SJ, Jang S. (Invited) Hydrogen Sensing Characteristics of Gallium Nitrides with Various Crystal Planes Ecs Transactions. 61: 353-357. DOI: 10.1149/06104.0353ECST |
0.495 |
|
2014 |
Hwang YH, Kang TS, Ren F, Pearton SJ. Novel approach to improve heat dissipation of AlGaN/GaN high electron mobility transistors with a Cu filled via under device active area Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 32. DOI: 10.1116/1.4896593 |
0.407 |
|
2014 |
Hwang YH, Ahn S, Chen D, Ren F, Gila BP, Hays D, Pearton SJ, Lo CF, Johnson JW. High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 32. DOI: 10.1116/1.4891966 |
0.427 |
|
2014 |
Anderson T, Koehler A, Hwang YH, Hsieh YL, Li S, Ren F, Johnson JW, Pearton SJ. Effect of proton irradiation on thermal resistance and breakdown voltage of InAlN/GaN high electron mobility transistors Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 32. DOI: 10.1116/1.4891629 |
0.405 |
|
2014 |
Liu L, Xi Y, Ahn S, Ren F, Gila BP, Pearton SJ, Kravchenko II. Characteristics of gate leakage current and breakdown voltage of AlGaN/GaN high electron mobility transistors after postprocess annealing Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 32: 052201. DOI: 10.1116/1.4891168 |
0.419 |
|
2014 |
Hwang YH, Hsieh YL, Lei L, Li S, Ren F, Pearton SJ, Yadav A, Schwarz C, Shatkhin M, Wang L, Flitsiyan E, Chernyak L, Baca AG, Allerman AA, Sanchez CA, et al. Effect of low dose γ-irradiation on DC performance of circular AlGaN/GaN high electron mobility transistors Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 32. DOI: 10.1116/1.4868632 |
0.352 |
|
2014 |
Liu L, Hwang Y, Xi Y, Ren F, Craciun V, Pearton SJ, Yang G, Kim H, Kim J. Study on the effects of proton irradiation on the dc characteristics of AlGaN/GaN high electron mobility transistors with source field plate Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 32: 022202. DOI: 10.1116/1.4866401 |
0.358 |
|
2014 |
Li S, Hwang Y, Hsieh Y, Ren F, Pearton SJ, Patrick E, Law ME. Enhancement of AlGaN/GaN High Electron Mobility Transistor Off-State Drain Breakdown Voltage via Backside Proton Irradiation Ecs Transactions. 61: 117-126. DOI: 10.1116/1.4864070 |
0.391 |
|
2014 |
Xi Y, Hsieh YL, Hwang YH, Li S, Ren F, Pearton SJ, Patrick E, Law ME, Yang G, Kim HY, Kim J, Baca AG, Allerman AA, Sanchez CA. Effect of 5 MeV proton radiation on DC performance and reliability of circular-shaped AlGaN/GaN high electron mobility transistors Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 32. DOI: 10.1116/1.4836577 |
0.354 |
|
2014 |
Lee I, Polyakov AY, Smirnov NB, Govorkov AV, Usikov AS, Helava H, Makarov YN, Pearton SJ. Deep hole traps in undoped n-GaN films grown by hydride vapor phase epitaxy Journal of Applied Physics. 115: 223702. DOI: 10.1063/1.4882715 |
0.328 |
|
2014 |
Hwang Y, Li S, Hsieh Y, Ren F, Pearton SJ, Patrick E, Law ME, Smith DJ. Effect of proton irradiation on AlGaN/GaN high electron mobility transistor off-state drain breakdown voltage Applied Physics Letters. 104: 082106. DOI: 10.1063/1.4866858 |
0.378 |
|
2014 |
Pearton S, Ren F. Advances in ZnO-based materials for light emitting diodes Current Opinion in Chemical Engineering. 3: 51-55. DOI: 10.1016/J.Coche.2013.11.002 |
0.33 |
|
2014 |
Pearton SJ, Deist R, Polyakov AY, Ren F, Liu L, Kim JH. Radiation Damage in GaN-Based Materials and Devices Advanced Energy Materials. 345-387. DOI: 10.1002/9781118904923.Ch9 |
0.355 |
|
2013 |
Kim BJ, Yang G, Kim HY, Baik KH, Mastro MA, Hite JK, Eddy CR, Ren F, Pearton SJ, Kim J. GaN-based ultraviolet light-emitting diodes with AuCl₃-doped graphene electrodes. Optics Express. 21: 29025-30. PMID 24514418 DOI: 10.1364/Oe.21.029025 |
0.572 |
|
2013 |
Park H, Baik KH, Kim J, Ren F, Pearton SJ. A facile method for highly uniform GaN-based nanorod light-emitting diodes with InGaN/GaN multi-quantum-wells. Optics Express. 21: 12908-13. PMID 23736510 DOI: 10.1364/Oe.21.012908 |
0.643 |
|
2013 |
Pearton SJ, Ren F. Wide Bandgap Semiconductor One-Dimensional Nanostructures for Applications in Nanoelectronics and Nanosensors Nanomaterials and Nanotechnology. 3: 1. DOI: 10.5772/56188 |
0.302 |
|
2013 |
Kim BJ, Yang G, Kim HY, Baik KH, Mastro MA, Hite JK, Eddy CR, Ren F, Pearton SJ, Kim J. GaN-based ultraviolet light-emitting diodes with AuCl3-doped graphene electrodes Optics Express. 21: 29025-29030. DOI: 10.1364/OE.21.029025 |
0.512 |
|
2013 |
Douglas EA, Zeenberg D, Maeda M, Gila BP, Abernathy CR, Pearton SJ, Ren F. Depth-Resolved Cathodoluminescence Spectroscopy Characterization of RF Stressed AlGaN/GaN High Electron Mobility Transistors Ecs Solid State Letters. 2: Q39-Q42. DOI: 10.1149/2.002306Ssl |
0.66 |
|
2013 |
Cho H, Kim K, Douglas EA, Gila BP, Craciun V, Lambers ES, Norton DP, Ren F, Pearton SJ. Band Offsets in Dielectric/InGaZnO4 Heterojunctions Ecs Transactions. 50: 367-375. DOI: 10.1149/05006.0367ECST |
0.586 |
|
2013 |
Liu L, Lo CF, Xi YY, Wang YX, Kim HY, Kim J, Pearton SJ, Laboutin O, Cao Y, Johnson JW, Kravchenko II, Ren F. The effects of proton irradiation on the reliability of InAlN/GaN high electron mobility transistors Proceedings of Spie - the International Society For Optical Engineering. 8625. DOI: 10.1117/12.2007287 |
0.372 |
|
2013 |
Polyakov AY, Smirnov NB, Kozhukhova EA, Osinsky AV, Pearton SJ. Temperature stability of high-resistivity GaN buffer layers grown by metalorganic chemical vapor deposition Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 31: 51208. DOI: 10.1116/1.4820905 |
0.39 |
|
2013 |
Kim H, Kim J, Liu L, Lo C, Ren F, Pearton SJ. Electrical characterization of60Co gamma radiation-exposed InAlN/GaN high electron mobility transistors Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 31: 051210. DOI: 10.1116/1.4820129 |
0.352 |
|
2013 |
Hwang YH, Liu L, Velez C, Ren F, Gila BP, Hays D, Pearton SJ, Lambers E, Kravchenko II, Lo CF, Johnson JW. GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 31. DOI: 10.1116/1.4816477 |
0.421 |
|
2013 |
Liu L, Velez Cuervo C, Xi Y, Ren F, Pearton SJ, Kim H, Kim J, Kravchenko II. Impact of proton irradiation on dc performance of AlGaN/GaN high electron mobility transistors Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 31: 042202. DOI: 10.1116/1.4813785 |
0.345 |
|
2013 |
Xi Y, Liu L, Ren F, Pearton SJ, Kim J, Dabiran A, Chow PP. Methane detection using Pt-gated AlGaN/GaN high electron mobility transistor based Schottky diodes Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 31: 032203. DOI: 10.1116/1.4803743 |
0.375 |
|
2013 |
Pearton SJ, Deist R, Ren F, Liu L, Polyakov AY, Kim J. Review of radiation damage in GaN-based materials and devices Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 31: 050801. DOI: 10.1116/1.4799504 |
0.347 |
|
2013 |
Xi Y, Liu L, Hwang Y, Phillips O, Ren F, Pearton SJ, Kim J, Hsu C, Lo C, Wayne Johnson J. Study of hydrogen detection response time with Pt-gated diodes fabricated on AlGaN/GaN heterostructure Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 31: 032202. DOI: 10.1116/1.4798612 |
0.306 |
|
2013 |
Hwang YS, Liu L, Ren F, Polyakov AY, Smirnov NB, Govorkov AV, Kozhukhova EA, Kolin NG, Boiko VM, Vereyovkin SS, Ermakov VS, Lo CF, Laboutin O, Cao Y, Johnson JW, ... ... Pearton SJ, et al. Effect of electron irradiation on AlGaN/GaN and InAlN/GaN heterojunctions Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 31. DOI: 10.1116/1.4795210 |
0.422 |
|
2013 |
Douglas EA, Bielejec E, Frenzer P, Yates BR, Pearton SJ, Lo C, Liu L, Kang T, Ren F. Effects of 2 MeV Ge+ irradiation on AlGaN/GaN high electron mobility transistors Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 31: 021205. DOI: 10.1116/1.4792370 |
0.693 |
|
2013 |
Liu L, Lo CF, Xi Y, Wang Y, Ren F, Pearton SJ, Kim HY, Kim J, Fitch RC, Walker DE, Chabak KD, Gillespie JK, Tetlak SE, Via GD, Crespo A, et al. Dependence on proton energy of degradation of AlGaN/GaN high electron mobility transistors Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 31. DOI: 10.1116/1.4788904 |
0.332 |
|
2013 |
Liu L, Lo CF, Xi Y, Ren F, Pearton SJ, Laboutin O, Cao Y, Johnson JW, Kravchenko II. Effect of buffer structures on AlGaN/GaN high electron mobility transistor reliability Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 31. DOI: 10.1116/1.4773060 |
0.383 |
|
2013 |
Polyakov AY, Smirnov NB, Govorkov AV, Kozhukhova EA, Pearton SJ, Ren F, Lui L, Johnson JW, Kargin NI, Ryzhuk RV. Deep centers and persistent photocapacitance in AlGaN/GaN high electron mobility transistor structures grown on Si substrates Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 31. DOI: 10.1116/1.4773057 |
0.431 |
|
2013 |
Lim W, Sung Y, Kim S, Shin Y, Jang T, Park T, Kim G, Song S, Lee W, Kim Y, Kim S, Pearton SJ. Effect of oxygen plasma treatment on nonalloyed Al/Ti-based contact for high power InGaN/GaN vertical light-emitting diodes Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 31: 010602. DOI: 10.1116/1.4773006 |
0.67 |
|
2013 |
Patrick E, Law ME, Liu L, Velez Cuervo C, Xi Y, Ren F, Pearton SJ. Modeling Proton Irradiation in AlGaN/GaN HEMTs: Understanding the Increase of Critical Voltage Ieee Transactions On Nuclear Science. 60: 4103-4108. DOI: 10.1109/Tns.2013.2286115 |
0.334 |
|
2013 |
Cheney DJ, Douglas EA, Liu L, Lo CF, Xi YY, Gila BP, Ren F, Horton D, Law ME, Smith DJ, Pearton SJ. Reliability studies of AlGaN/GaN high electron mobility transistors Semiconductor Science and Technology. 28. DOI: 10.1088/0268-1242/28/7/074019 |
0.658 |
|
2013 |
Hung SC, Woon WY, Lan SM, Ren F, Pearton SJ. Characteristics of carbon monoxide sensors made by polar and nonpolar zinc oxide nanowires gated AlGaN/GaN high electron mobility transistor Applied Physics Letters. 103. DOI: 10.1063/1.4818671 |
0.388 |
|
2013 |
Holzworth MR, Rudawski NG, Whiting PG, Pearton SJ, Jones KS, Lu L, Kang TS, Ren F, Patrick E, Law ME. Field-induced defect morphology in Ni-gate AlGaN/GaN high electron mobility transistors Applied Physics Letters. 103. DOI: 10.1063/1.4813535 |
0.375 |
|
2013 |
Stehr JE, Wang XJ, Filippov S, Pearton SJ, Ivanov IG, Chen WM, Buyanova IA. Defects in N, O and N, Zn implanted ZnO bulk crystals Journal of Applied Physics. 113: 103509. DOI: 10.1063/1.4795261 |
0.311 |
|
2013 |
Schwarz C, Yadav A, Shatkhin M, Flitsiyan E, Chernyak L, Kasiyan V, Liu L, Xi YY, Ren F, Pearton SJ, Lo CF, Johnson JW, Danilova E. Gamma irradiation impact on electronic carrier transport in AlGaN/GaN high electron mobility transistors Applied Physics Letters. 102. DOI: 10.1063/1.4792240 |
0.368 |
|
2013 |
Yeh N, Chiu P, Chyi J, Ren F, Pearton SJ. Sb-based semiconductors for low power electronics Journal of Materials Chemistry C. 1: 4616. DOI: 10.1039/C3Tc30585F |
0.327 |
|
2013 |
Polyakov AY, Pearton SJ, Frenzer P, Ren F, Liu L, Kim JH. Radiation effects in GaN materials and devices Journal of Materials Chemistry C. 1: 877-887. DOI: 10.1039/C2Tc00039C |
0.339 |
|
2013 |
Park JC, Jeong OG, Kim JK, Yun Y, Pearton SJ, Cho H. Comparison of chlorine- and fluorine-based inductively coupled plasmas for dry etching of InGaZnO4 films Thin Solid Films. 546: 136-140. DOI: 10.1016/J.Tsf.2013.05.031 |
0.354 |
|
2013 |
Lo CF, Xi Y, Liu L, Pearton SJ, Doré S, Hsu CH, Dabiran AM, Chow PP, Ren F. Effect of temperature on CO sensing response in air ambient by using zno nanorod-gated AlGaN/GaN high electron mobility transistors Sensors and Actuators, B: Chemical. 176: 708-712. DOI: 10.1016/J.Snb.2012.10.051 |
0.361 |
|
2012 |
Heo YW, Pearton SJ, Norton DP. Size-dependent electrical conductivity of indium zinc oxide deposited by RF magnetron sputtering. Journal of Nanoscience and Nanotechnology. 12: 3264-7. PMID 22849102 DOI: 10.1166/Jnn.2012.5635 |
0.329 |
|
2012 |
Pearton SJ, Lim WT, Douglas E, Cho H, Ren F. Flexible Electronics Based on InGaZnO Transparent Thin Film Transistors Key Engineering Materials. 521: 141-151. DOI: 10.4028/Www.Scientific.Net/Kem.521.141 |
0.792 |
|
2012 |
Cheney DJ, Douglas EA, Liu L, Lo CF, Gila BP, Ren F, Pearton SJ. Degradation mechanisms for GaN and GaAs high speed transistors Materials. 5: 2498-2520. DOI: 10.3390/Ma5122498 |
0.676 |
|
2012 |
Ren F, Pearton SJ, Liu L, Kang T, Douglas EA, Chang CY, Lo C, Cullen DA, Zhou L, Smith DJ. The Effects of Device Dimension, Substrate Temperature, and Gate Metallization on the Reliability of AlGaN/GaN High Electron Mobility Transistors Mrs Proceedings. 1396. DOI: 10.1557/Opl.2012.354 |
0.688 |
|
2012 |
Cheney D, Deist R, Gila B, Ren F, Whiting P, Navales J, Douglas E, Pearton S. Determination of AlGaN/GaN HEMT reliability using optical pumping as a characterization method Materials Research Society Symposium Proceedings. 1432: 143-149. DOI: 10.1557/Opl.2012.1138 |
0.321 |
|
2012 |
Polyakov AY, Smirnov NB, Govorkov AV, Kozhukhova EA, Pearton SJ, Ren F, Yu S, Karpov, Shcherbachev KD, Lim W. Admittance Spectra Studies of Quantum Well States in AlGaN/AlN/GaN Heterojunctions Ecs Journal of Solid State Science and Technology. 1. DOI: 10.1149/2.019203Jss |
0.659 |
|
2012 |
Polyakov AY, Smirnov NB, Govorkov AV, Kozhukhova EA, Pearton SJ, Ren F, Liu L, Johnson JW, Lim W, Kolin NG, Veryovkin SS, Ermakov VS. Comparison of neutron irradiation effects in AlGaN/AlN/GaN, AlGaN/GaN, and InAlN/GaN heterojunctions Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 30. DOI: 10.1116/1.4766727 |
0.683 |
|
2012 |
Johnson MR, Cullen DA, Liu L, Sheng Kang T, Ren F, Chang C, Pearton SJ, Jang S, Johnson JW, Smith DJ. Transmission electron microscopy characterization of electrically stressed AlGaN/GaN high electron mobility transistor devices Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 30: 062204. DOI: 10.1116/1.4766303 |
0.373 |
|
2012 |
Douglas EA, Stevens J, Fishgrab K, Ford C, Shul RJ, Pearton SJ. Low-pressure inductively coupled plasma etching of benzocyclobutene with SF6/O2 plasma chemistry Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 30: 06FF06. DOI: 10.1116/1.4758765 |
0.65 |
|
2012 |
Wei Chen C, Ren F, Chi G, Hung S, Huang YP, Kim J, Kravchenko II, Pearton SJ. UV ozone treatment for improving contact resistance on graphene Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 30: 060604. DOI: 10.1116/1.4754566 |
0.34 |
|
2012 |
Wang X, Lo CF, Liu L, Cuervo CV, Fan R, Pearton SJ, Gila B, Johnson MR, Zhou L, Smith DJ, Kim J, Laboutin O, Cao Y, Johnson JW. 193 nm excimer laser lift-off for AlGaN/GaN high electron mobility transistors Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 30. DOI: 10.1116/1.4751278 |
0.37 |
|
2012 |
Jung Y, Hyun Kim S, Kim J, Wang X, Ren F, Jin Choi K, Pearton SJ. GaN-based light-emitting diodes by laser lift-off with micro- and nano-sized reflectors Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 30: 050605. DOI: 10.1116/1.4739769 |
0.332 |
|
2012 |
Lo C, Liu L, Ren F, Pearton SJ, Gila BP, Kim H, Kim J, Laboutin O, Cao Y, Johnson JW, Kravchenko II. Proton irradiation energy dependence of dc and rf characteristics on InAlN/GaN high electron mobility transistors [J. Vac. Sci. Technol. B 30, 041206 (2012)] Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 30: 043401. DOI: 10.1116/1.4737150 |
0.32 |
|
2012 |
Hung S, Chang C, Chen CC, Lo CF, Ren F, Pearton SJ, Kravchenko II. SnO2-gated AlGaN/GaN high electron mobility transistors based oxygen sensors Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 30: 041214. DOI: 10.1116/1.4736974 |
0.344 |
|
2012 |
Chen CW, Ren F, Chi G, Hung SC, Huang YP, Kim J, Kravchenko I, Pearton SJ. Effects of semiconductor processing chemicals on conductivity of graphene Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 30: 040602. DOI: 10.1116/1.4732517 |
0.318 |
|
2012 |
Polyakov AY, Smirnov NB, Govorkov AV, Kozhukhova EA, Pearton SJ, Ren F, Karpov SY, Shcherbachev KD, Kolin NG, Lim W. Metastable centers in AlGaN/AlN/GaN heterostructures Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 30: 41209. DOI: 10.1116/1.4731256 |
0.677 |
|
2012 |
Lo CF, Liu L, Ren F, Pearton SJ, Gila BP, Kim HY, Kim J, Laboutin O, Cao Y, Johnson JW, Kravchenko II. Proton irradiation energy dependence of dc and rf characteristics on InAlN/GaN high electron mobility transistors Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 30. DOI: 10.1116/1.4729285 |
0.356 |
|
2012 |
Lee I, Polyakov AY, Smirnov NB, Govorkov AV, Kozhukhova EA, Zaletin VM, Gazizov IM, Kolin NG, Pearton SJ. Electrical properties and radiation detector performance of free-standing bulk n-GaN Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 30: 21205. DOI: 10.1116/1.3690644 |
0.396 |
|
2012 |
Kim H, Kim J, Liu L, Lo C, Ren F, Pearton SJ. Effects of proton irradiation energies on degradation of AlGaN/GaN high electron mobility transistors Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 30: 012202. DOI: 10.1116/1.3676034 |
0.342 |
|
2012 |
Lo CF, Liu L, Chu BH, Ren F, Pearton SJ, Doré S, Hsu CH, Kim J, Dabiran AM, Chow PP. Carbon monoxide detection sensitivity of ZnO nanorod-gated AlGaN/GaN high electron mobility transistors in different temperature environments Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 30. DOI: 10.1116/1.3672010 |
0.369 |
|
2012 |
Lo CF, Liu L, Kang TS, Ren F, Laboutin O, Cao Y, Johnson JW, Polyakov AY, Smirnov NB, Govorkov AV, Belogorokhov IA, Belogorokhov AI, Pearton SJ. Effect of buffer layer structure on electrical and structural properties of AlGaN/GaN high electron mobility transistors Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 30. DOI: 10.1116/1.3671020 |
0.396 |
|
2012 |
Kang TS, Wang XT, Lo CF, Ren F, Pearton SJ, Laboutin O, Cao Y, Johnson JW, Kim J. Simulation and experimental study of ArF 193 nm laser lift-off AlGaN/GaN high electron mobility transistors Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 30. DOI: 10.1116/1.3664283 |
0.347 |
|
2012 |
Wang SY, Chang CA, Chang CM, Chen SH, Ren F, Pearton SJ, Chyi J-. Investigation of emitter size effect in InP/InGaAsSb/InGaAs double heterojunction bipolar transistors Applied Physics Letters. 101: 73507. DOI: 10.1063/1.4745208 |
0.347 |
|
2012 |
Kim BJ, Lee C, Mastro MA, Hite JK, Eddy CR, Ren F, Pearton SJ, Kim J. Buried graphene electrodes on GaN-based ultra-violet light-emitting diodes Applied Physics Letters. 101. DOI: 10.1063/1.4733981 |
0.325 |
|
2012 |
Jung Y, Wang X, Kim J, Hyun Kim S, Ren F, Pearton SJ. GaN-based light-emitting diodes on origami substrates Applied Physics Letters. 100. DOI: 10.1063/1.4726123 |
0.339 |
|
2012 |
Wang XJ, Chen WM, Ren F, Pearton S, Buyanova IA. Effects of P implantation and post-implantation annealing on defect formation in ZnO Journal of Applied Physics. 111: 043520. DOI: 10.1063/1.3687919 |
0.305 |
|
2012 |
Kim H, Lo CF, Liu L, Ren F, Kim J, Pearton SJ. Proton-irradiated InAlN/GaN high electron mobility transistors at 5, 10, and 15 MeV energies Applied Physics Letters. 100: 012107. DOI: 10.1063/1.3673906 |
0.337 |
|
2012 |
Cho H, Douglas EA, Gila BP, Craciun V, Lambers ES, Ren F, Pearton SJ. Band offsets in HfO2/InGaZnO4 heterojunctions Applied Physics Letters. 100: 012105. DOI: 10.1063/1.3673905 |
0.648 |
|
2012 |
Shin J, Choi K, Noh K, Park D, Sohn K, Cho G, Song H, Lee J, Pearton S. Selective etching of GaAs over Al0.2Ga0.8As semiconductor in pulsed DC BCl3/SF6 plasmas Thin Solid Films. 521: 245-248. DOI: 10.1016/J.Tsf.2011.10.205 |
0.32 |
|
2012 |
Kim H, Lim W, Lee J, Pearton S, Ren F, Jang S. Highly sensitive AlGaN/GaN diode-based hydrogen sensors using platinum nanonetworks Sensors and Actuators B: Chemical. 164: 64-68. DOI: 10.1016/J.Snb.2012.01.067 |
0.656 |
|
2012 |
Cheney DJ, Deist R, Gila B, Navales J, Ren F, Pearton SJ. Trap detection in electrically stressed AlGaN/GaN HEMTs using optical pumping Microelectronics Reliability. 52: 2884-2888. DOI: 10.1016/J.Microrel.2012.08.018 |
0.33 |
|
2012 |
Whiting PG, Rudawski NG, Holzworth MR, Pearton SJ, Jones KS, Liu L, Kang TS, Ren F. Under-gate defect formation in Ni-gate AlGaN/GaN high electron mobility transistors Microelectronics Reliability. 52: 2542-2546. DOI: 10.1016/J.Microrel.2012.05.015 |
0.394 |
|
2012 |
Douglas EA, Chang CY, Gila BP, Holzworth MR, Jones KS, Liu L, Kim J, Jang S, Via GD, Ren F, Pearton SJ. Investigation of the effect of temperature during off-state degradation of AlGaN/GaN High Electron Mobility Transistors Microelectronics Reliability. 52: 23-28. DOI: 10.1016/J.Microrel.2011.09.018 |
0.685 |
|
2012 |
Hung ST, Chang CJ, Hsu CH, Chu BH, Lo CF, Hsu CC, Pearton SJ, Holzworth MR, Whiting PG, Rudawski NG, Jones KS, Dabiran A, Chow P, Ren F. SnO 2 functionalized AlGaN/GaN high electron mobility transistor for hydrogen sensing applications International Journal of Hydrogen Energy. 37: 13783-13788. DOI: 10.1016/J.Ijhydene.2012.03.124 |
0.428 |
|
2012 |
Jung Y, Wang X, Kim SH, Ren F, Kim J, Pearton SJ. A facile method for flexible GaN-based light-emitting diodes Physica Status Solidi (Rrl) - Rapid Research Letters. 6: 421-423. DOI: 10.1002/Pssr.201206374 |
0.318 |
|
2011 |
Jung Y, Ahn J, Baik KH, Kim D, Pearton SJ, Ren F, Kim J. Chemical Etch Characteristics of N-Face and Ga-Face GaN by Phosphoric Acid and Potassium Hydroxide Solutions Journal of the Electrochemical Society. 159: H117-H120. DOI: 10.1149/2.039202Jes |
0.605 |
|
2011 |
Douglas EA, Pearton SJ, Poling B, Via GD, Liu L, Ren F. Effect of Drain Bias on Degradation of AlGaN/GaN High Electron Mobility Transistors under X-Band Operation Electrochemical and Solid State Letters. 14. DOI: 10.1149/2.019111Esl |
0.652 |
|
2011 |
Lee I, Polyakov AY, Smirnov NB, Govorkov AV, Kozhukhova EA, Kolin NG, Boiko VM, Korulin AV, Pearton SJ. Carrier Removal Rates and Deep Traps in Neutron Irradiated n-GaN Films Journal of the Electrochemical Society. 158: H866. DOI: 10.1149/1.3607986 |
0.331 |
|
2011 |
Chu BH, Nicolosi J, Lo CF, Strupinski W, Pearton SJ, Ren F. Effect of Coated Platinum Thickness on Hydrogen Detection Sensitivity of Graphene-Based Sensors Electrochemical and Solid-State Letters. 14: K43. DOI: 10.1149/1.3589250 |
0.304 |
|
2011 |
Lo C, Liu L, Kang T, Davies R, Gila BP, Pearton SJ, Kravchenko II, Laboutin O, Cao Y, Johnson WJ, Ren F. Improvement of Off-State Stress Critical Voltage by Using Pt-Gated AlGaN/GaN High Electron Mobility Transistors Electrochemical and Solid-State Letters. 14: H264. DOI: 10.1149/1.3578388 |
0.345 |
|
2011 |
Lim W, Jeong J, Lee H, Lee J, Hur S, Ryu J, Kim K, Kim T, Song SY, Hur W, Kim ST, Pearton SJ. Normally-Off Operation of Recessed-Gate AlGaN/GaN HFETs for High Power Applications Electrochemical and Solid State Letters. 14. DOI: 10.1149/1.3555069 |
0.622 |
|
2011 |
Hung SC, Chen CW, Shieh CY, Chi GC, Ren F, Pearton SJ. Characteristics of CO sensors made by polar and nonpolar ZnO nanowires gated AlGaN/GaN high electron mobility transistor Proceedings of Spie. 8024. DOI: 10.1117/12.883015 |
0.383 |
|
2011 |
Liu L, Ren F, Pearton SJ, Fitch RC, Walker DE, Chabak KD, Gillespie JK, Kossler M, Trejo M, Via D, Crespo A. Investigating the effect of off-state stress on trap densities in AlGaN/GaN high electron mobility transistors Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 29. DOI: 10.1116/1.3660396 |
0.37 |
|
2011 |
Fitch RC, Walker DE, Chabak KD, Gillespie JK, Kossler M, Trejo M, Crespo A, Liu L, Kang TS, Lo CF, Ren F, Cheney DJ, Pearton SJ. Comparison of passivation layers for AlGaN/GaN high electron mobility transistors Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 29. DOI: 10.1116/1.3656390 |
0.4 |
|
2011 |
Lo CF, Liu L, Ren F, Kim HY, Kim J, Pearton SJ, Laboutin O, Cao Y, Johnson JW, Kravchenko II. Effects of proton irradiation on dc characteristics of InAlN/GaN high electron mobility transistors Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 29. DOI: 10.1116/1.3644480 |
0.368 |
|
2011 |
Liu L, Lo C, Kang T, Ren F, Pearton SJ, Kravchenko II, Laboutin O, Cao Y, Johnson WJ. Comparison of DC performance of Pt/Ti/Au- and Ni/Au-gated AlGaN/GaN high electron mobility transistors Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 29: 042202. DOI: 10.1116/1.3607601 |
0.362 |
|
2011 |
Lo CF, Ren F, Pearton SJ, Polyakov AY, Smirnov NB, Govorkov AV, Belogorokhov IA, Belogorokhov AI, Reznik VY, Johnson JW. Deep traps and thermal measurements on AlGaN/GaN on Si transistors Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 29. DOI: 10.1116/1.3605304 |
0.413 |
|
2011 |
Kang TS, Lo CF, Liu L, Finch R, Ren F, Wang XT, Douglas E, Pearton SJ, Hung ST, Chang C. Thermal simulation of laser lift-off AlGaN/GaN high electron mobility transistors mounted on AlN substrates Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 29: 041202. DOI: 10.1116/1.3605298 |
0.69 |
|
2011 |
Lee I, Polyakov AY, Smirnov NB, Govorkov AV, Kozhukhova EA, Kolin NG, Boiko VM, Korulin AV, Pearton SJ. Deep electron and hole traps in neutron transmutation doped n-GaN Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 29: 41201. DOI: 10.1116/1.3596571 |
0.377 |
|
2011 |
Lo CF, Kang TS, Liu L, Ren F, Pearton SJ, Kim J, Jang S, Laboutin O, Cao Y, Johnson JW. Effects of silicon nitride passivation on isolation-blocking voltage in algan/gan high electron mobility transistors Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 29. DOI: 10.1116/1.3593002 |
0.395 |
|
2011 |
Lo CF, Ren F, Chang CY, Pearton SJ, Chen S-, Chang C-, Wang S-, Chyi J-, Kravchenko II. Fabrication of InAlAs/InGaAsSb/InGaAs double heterojunction bipolar transistors Journal of Vacuum Science & Technology B. 29: 31205. DOI: 10.1116/1.3589808 |
0.348 |
|
2011 |
Liu L, Kang TS, Cullen DA, Zhou L, Kim J, Chang CY, Douglas EA, Jang S, Smith DJ, Pearton SJ, Johnson WJ, Ren F. Effect of source field plate on the characteristics of off-state, step-stressed AlGaN/GaN high electron mobility transistors Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 29: 32204. DOI: 10.1116/1.3581078 |
0.667 |
|
2011 |
Choi KH, Lee SH, Park JH, Sohn KY, Lee JW, Pearton SJ. Dry etching of GaAs in asymmetric bipolar pulsed dc BCl3 plasmas Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 29: 30601. DOI: 10.1116/1.3574369 |
0.341 |
|
2011 |
Douglas EA, Ren F, Pearton SJ. Finite-element simulations of the effect of device design on channel temperature for AlGaN/GaN high electron mobility transistors Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 29: 020603. DOI: 10.1116/1.3567183 |
0.678 |
|
2011 |
Lee KC, Jo K, Sung S, Lee J, Kim J, Jeong B, Pearton SJ, Norton DP, Heo Y. Low temperature processing of indium-tin-zinc oxide channel layers in fabricating thin-film transistors Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 29: 021008. DOI: 10.1116/1.3553205 |
0.421 |
|
2011 |
Lo CF, Liu L, Chang CY, Ren F, Craciun V, Pearton SJ, Heo YW, Laboutin O, Johnson JW. Annealing temperature dependence of Ohmic contact resistance and morphology on InAlN/GaN high electron mobility transistor structures Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 29. DOI: 10.1116/1.3545811 |
0.437 |
|
2011 |
Chang CY, Douglas EA, Kim J, Lu L, Lo CF, Chu BH, Cheney DJ, Gila BP, Ren F, Via GD, Cullen DA, Zhou L, Smith DJ, Jang S, Pearton SJ. Electric-field-driven degradation in off-state step-stressed AlGaN/GaN high-electron mobility transistors Ieee Transactions On Device and Materials Reliability. 11: 187-193. DOI: 10.1109/Tdmr.2010.2103314 |
0.667 |
|
2011 |
Chen CW, Hung SC, Yang MD, Yeh CW, Wu CH, Chi GC, Ren F, Pearton SJ. Oxygen sensors made by monolayer graphene under room temperature Applied Physics Letters. 99: 243502. DOI: 10.1063/1.3668105 |
0.304 |
|
2011 |
Polyakov AY, Jang LW, Smirnov NB, Govorkov AV, Kozhukhova EA, Yugova TG, Reznik VY, Pearton SJ, Baik KH, Hwang SM, Jung S, Lee IH. Characteristics of a-GaN films and a-AlGaN/GaN heterojunctions prepared on r-sapphire by two-stage growth process Journal of Applied Physics. 110: 93709. DOI: 10.1063/1.3658026 |
0.64 |
|
2011 |
Lo CF, Chu BH, Pearton SJ, Dabiran A, Chow PP, Doré S, Hung SC, Chen CW, Ren F. Effect of temperature on CO detection sensitivity of ZnO nanorod-gated AlGaN/GaN high electron mobility transistors Applied Physics Letters. 99. DOI: 10.1063/1.3647561 |
0.365 |
|
2011 |
Douglas EA, Scheurmann A, Davies RP, Gila BP, Cho H, Craciun V, Lambers ES, Pearton SJ, Ren F. Erratum: “Measurement of SiO2/InZnGaO4 heterojunction band offsets by x-ray photoelectron spectroscopy” [Appl. Phys. Lett. 98, 242110 (2011)] Applied Physics Letters. 99: 059901. DOI: 10.1063/1.3617417 |
0.58 |
|
2011 |
Douglas EA, Scheurmann A, Davies RP, Gila BP, Cho H, Craciun V, Lambers ES, Pearton SJ, Ren F. Measurement of SiO2/InZnGaO4 heterojunction band offsets by x-ray photoelectron spectroscopy Applied Physics Letters. 98: 242110. DOI: 10.1063/1.3600340 |
0.638 |
|
2011 |
Polyakov AY, Lee I, Smirnov NB, Govorkov AV, Kozhukhova EA, Pearton SJ. Comparison of hole traps in n-GaN grown by hydride vapor phase epitaxy, metal organic chemical vapor deposition, and epitaxial lateral overgrowth Journal of Applied Physics. 109: 123701. DOI: 10.1063/1.3599894 |
0.369 |
|
2011 |
Johnson JL, Behnam A, An Y, Pearton SJ, Ural A. Experimental study of graphitic nanoribbon films for ammonia sensing Journal of Applied Physics. 109. DOI: 10.1063/1.3597635 |
0.328 |
|
2011 |
Polyakov AY, Lee I, Smirnov NB, Govorkov AV, Kozhukhova EA, Kolin NG, Korulin AV, Boiko VM, Pearton SJ. 10 MeV electrons irradiation effects in variously doped n-GaN Journal of Applied Physics. 109: 123703. DOI: 10.1063/1.3596819 |
0.381 |
|
2011 |
Hung SC, Chen CW, Shieh CY, Chi GC, Fan R, Pearton SJ. High sensitivity carbon monoxide sensors made by zinc oxide modified gated GaN/AlGaN high electron mobility transistors under room temperature Applied Physics Letters. 98: 223504. DOI: 10.1063/1.3596440 |
0.381 |
|
2011 |
Lee I, Polyakov AY, Smirnov NB, Govorkov AV, Kozhukhova EA, Yakimov EB, Kolin NG, Boiko VM, Korulin AV, Pearton SJ. Neutron doping effects in epitaxially laterally overgrown n-GaN Applied Physics Letters. 98: 212107. DOI: 10.1063/1.3593957 |
0.38 |
|
2011 |
Holzworth MR, Rudawski NG, Pearton SJ, Jones KS, Lu L, Kang TS, Ren F, Johnson JW. Characterization of the gate oxide of an AlGaN/GaN high electron mobility transistor Applied Physics Letters. 98. DOI: 10.1063/1.3569715 |
0.33 |
|
2011 |
Polyakov AY, Smirnov NB, Govorkov AV, Amano H, Pearton SJ, Lee I, Sun Q, Han J, Karpov SY. Role of nonradiative recombination centers and extended defects in nonpolar GaN on light emission efficiency Applied Physics Letters. 98: 072104. DOI: 10.1063/1.3555470 |
0.369 |
|
2011 |
Socol G, Craciun D, Mihailescu I, Stefan N, Besleaga C, Ion L, Antohe S, Kim K, Norton D, Pearton S, Galca A, Craciun V. High quality amorphous indium zinc oxide thin films synthesized by pulsed laser deposition Thin Solid Films. 520: 1274-1277. DOI: 10.1016/J.Tsf.2011.04.196 |
0.366 |
|
2011 |
Chu BH, Lo C, Nicolosi J, Chang C, Chen V, Strupinski W, Pearton S, Ren F. Hydrogen detection using platinum coated graphene grown on SiC Sensors and Actuators B: Chemical. 157: 500-503. DOI: 10.1016/J.Snb.2011.05.007 |
0.351 |
|
2011 |
Douglas EA, Chang CY, Cheney DJ, Gila BP, Lo CF, Lu L, Holzworth R, Whiting P, Jones K, Via GD, Kim J, Jang S, Ren F, Pearton SJ. AlGaN/GaN high electron mobility transistor degradation under on- and off-state stress Microelectronics Reliability. 51: 207-211. DOI: 10.1016/J.Microrel.2010.09.024 |
0.654 |
|
2010 |
Chu BH, Wang YL, Chen KH, Chang CY, Lo CF, Pearton SJ, Papadi G, Coleman JK, Sheppard BJ, Dungen CF, Kroll K, Denslow N, Dabiran A, Chow PP, Johnson JW, et al. AlGaN/GaN high-electron mobility transistor-based sensors for environmental and bio-applications Proceedings of Spie - the International Society For Optical Engineering. 7679. DOI: 10.1166/Nnl.2010.1068 |
0.301 |
|
2010 |
Chu M, Kim S, Sung S, Lee J, Kim J, Norton DP, Pearton SJ, Heo Y. Catalyst-Free Patterned Growth of Well-Aligned ZnO Nanowires on ITO Substrates Using an Aqueous Solution Method and Lithography Process Journal of Nanoelectronics and Optoelectronics. 5: 186-190. DOI: 10.1166/Jno.2010.1090 |
0.353 |
|
2010 |
Jung Y, Baik KH, Ren F, Pearton SJ, Kim J. Effects of Photoelectrochemical Etching of N-Polar and Ga-Polar Gallium Nitride on Sapphire Substrates Journal of the Electrochemical Society. 157: H676. DOI: 10.1149/1.3384713 |
0.609 |
|
2010 |
Ko G, Kim H, Ren F, Pearton SJ, Kim J. Electrical Characterization of 5 MeV Proton-Irradiated Few Layer Graphene Electrochemical and Solid-State Letters. 13: K32. DOI: 10.1149/1.3290777 |
0.326 |
|
2010 |
Polyakov AY, Markov AV, Mezhennyi MV, Donskov AA, Malakhov SS, Govorkov AV, Kozlova YP, Pavlov VF, Smirnov NB, Yugova TG, Lee I, Han J, Sun Q, Pearton SJ. a-plane GaN hydride vapor phase epitaxy on a-plane GaN templates with and without use of TiN intermediate layers Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 28: 1039-1043. DOI: 10.1116/1.3491187 |
0.389 |
|
2010 |
Chang CY, Anderson T, Hite J, Lu L, Lo CF, Chu BH, Cheney DJ, Douglas EA, Gila BP, Ren F, Via GD, Whiting P, Holzworth R, Jones KS, Jang S, ... Pearton SJ, et al. Reverse gate bias-induced degradation of AlGaN/GaN high electron mobility transistors Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 28: 1044-1047. DOI: 10.1116/1.3491038 |
0.678 |
|
2010 |
Polyakov AY, Markov AV, Duhnovsky MP, Mezhennyi MV, Donskov AA, Malakhov SS, Govorkov AV, Kozlova YP, Pavlov VF, Smirnov NB, Yugova TG, Belogorokhov AI, Belogorokhov IA, Ratnikova AK, Fyodorov YY, ... ... Pearton SJ, et al. GaN epitaxial films grown by hydride vapor phase epitaxy on polycrystalline chemical vapor deposition diamond substrates using surface nanostructuring with TiN or anodic Al oxide Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 28: 1011-1015. DOI: 10.1116/1.3488616 |
0.378 |
|
2010 |
Lo CF, Chang CY, Chu BH, Kim H, Kim J, Cullen DA, Zhou L, Smith DJ, Pearton SJ, Dabiran A, Cui B, Chow PP, Jang S, Ren F. Proton irradiation effects on AlN/GaN high electron mobility transistors Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 28: L47-L51. DOI: 10.1116/1.3482335 |
0.363 |
|
2010 |
Khanna R, Douglas EA, Norton DP, Pearton SJ, Ren F. Ti/Au Ohmic contacts to indium zinc oxide thin films on paper substrates Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 28: L43-L46. DOI: 10.1116/1.3467507 |
0.703 |
|
2010 |
Polyakov AY, Smirnov NB, Govorkov AV, Kolin NG, Merkurisov DI, Boiko VM, Korulin AV, Pearton SJ. Neutron transmutation doping effects in GaN Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 28: 608-612. DOI: 10.1116/1.3431083 |
0.401 |
|
2010 |
Wang YL, Chang CY, Lim W, Pearton SJ, Norton DP, Chu BH, Lo CF, Ren F, Johnson JW, Rajagopal P, Roberts JC, Piner EL, Linthicum KJ. Oxygen gas sensing at low temperature using indium zinc oxide-gated AlGaN/GaN high electron mobility transistors Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 28: 376-379. DOI: 10.1116/1.3368467 |
0.677 |
|
2010 |
Chen KH, Chang CY, Leu LC, Lo CF, Chu BH, Pearton SJ, Ren F. Degradation of 150 nm mushroom gate InAlAs/InGaAs metamorphic high electron mobility transistors during dc stressing and thermal storage Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 28: 365-370. DOI: 10.1116/1.3359603 |
0.371 |
|
2010 |
Lo CF, Chang CY, Pearton SJ, Kravchenko II, Dabiran AM, Wowchak AM, Cui B, Chow PP, Ren F. Passivation of AlN∕GaN high electron mobility transistor using ozone treatment Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 28: 52-55. DOI: 10.1116/1.3271333 |
0.373 |
|
2010 |
Wright JS, Lim W, Norton DP, Pearton SJ, Ren F, Johnson JL, Ural A. Nitride and oxide semiconductor nanostructured hydrogen gas sensors Semiconductor Science and Technology. 25: 024002. DOI: 10.1088/0268-1242/25/2/024002 |
0.664 |
|
2010 |
Baik KH, Seo YG, Kim J, Hwang S, Lim W, Chang CY, Pearton SJ, Ren F, Jang S. Ohmic contact properties of non-polara-plane GaN films onr-plane sapphire substrates Journal of Physics D: Applied Physics. 43: 295102. DOI: 10.1088/0022-3727/43/29/295102 |
0.748 |
|
2010 |
Lo CF, Kang TS, Liu L, Chang CY, Pearton SJ, Kravchenko II, Laboutin O, Johnson JW, Ren F. Isolation blocking voltage of nitrogen ion-implanted AlGaN/GaN high electron mobility transistor structure Applied Physics Letters. 97. DOI: 10.1063/1.3533381 |
0.364 |
|
2010 |
Lim W, Jeong J, Lee J, Hur S, Ryu J, Kim K, Kim T, Song SY, Yang J, Pearton SJ. Temperature dependence of current-voltage characteristics of Ni–AlGaN/GaN Schottky diodes Applied Physics Letters. 97: 242103. DOI: 10.1063/1.3525931 |
0.677 |
|
2010 |
Sung S, Kim S, Jo K, Lee J, Kim J, Kim S, Chai K, Pearton SJ, Norton DP, Heo Y. Fabrication of p-channel thin-film transistors using CuO active layers deposited at low temperature Applied Physics Letters. 97: 222109. DOI: 10.1063/1.3521310 |
0.388 |
|
2010 |
Zhou L, Chang CY, Pearton SJ, Ren F, Dabiran A, Smith DJ. TiAlNiAu contacts for ultrathin AlN/GaN high electron mobility transistor structures Journal of Applied Physics. 108: 84513. DOI: 10.1063/1.3501106 |
0.413 |
|
2010 |
Lo CF, Chang CY, Chu BH, Pearton SJ, Dabiran A, Chow PP, Ren F. Effect of humidity on hydrogen sensitivity of Pt-gated AlGaN/GaN high electron mobility transistor based sensors Applied Physics Letters. 96: 232106. DOI: 10.1063/1.3454279 |
0.326 |
|
2010 |
Davies RP, Gila BP, Abernathy CR, Pearton SJ, Stanton CJ. Defect-enhanced ferromagnetism in Gd- and Si-coimplanted GaN Applied Physics Letters. 96: 212502. DOI: 10.1063/1.3437085 |
0.402 |
|
2010 |
Sung SY, Choi JH, Han UB, Lee KC, Lee JH, Kim JJ, Lim W, Pearton SJ, Norton DP, Heo YW. Effects of ambient atmosphere on the transfer characteristics and gate-bias stress stability of amorphous indium-gallium-zinc oxide thin-film transistors Applied Physics Letters. 96. DOI: 10.1063/1.3357431 |
0.681 |
|
2010 |
Lim W, Douglas EA, Norton DP, Pearton SJ, Ren F, Heo YW, Son SY, Yuh JH. Low-voltage indium gallium zinc oxide thin film transistors on paper substrates Applied Physics Letters. 96. DOI: 10.1063/1.3309753 |
0.793 |
|
2010 |
Polyakov AY, Smirnov NB, Govorkov AV, Kozhukhova EA, Dabiran AM, Chow PP, Wowchak AM, Pearton SJ. Electrical and optical properties of Fe doped AlGaN grown by molecular beam epitaxy Journal of Applied Physics. 107: 023708. DOI: 10.1063/1.3285408 |
0.366 |
|
2010 |
Hung S, Nafday OA, Haaheim JR, Ren F, Chi GC, Pearton SJ. Dip Pen Nanolithography of Conductive Silver Traces The Journal of Physical Chemistry C. 114: 9672-9677. DOI: 10.1021/Jp101505K |
0.313 |
|
2010 |
Chen CW, Pan CJ, Tsao FC, Liu YL, Kuo CW, Kuo CH, Chi GC, Chen PH, Lai WC, Hsueh TH, Tun CJ, Chang CY, Pearton SJ, Ren F. Catalyst-free ZnO nanowires grown on a-plane GaN Vacuum. 84: 803-806. DOI: 10.1016/J.Vacuum.2009.10.043 |
0.373 |
|
2010 |
Park J, Lee S, Choi K, Noh H, Lee J, Pearton S. Comparison of dry etching of PMMA and polycarbonate in diffusion pump-based O2 capacitively coupled plasma and inductively coupled plasma Thin Solid Films. 518: 6465-6468. DOI: 10.1016/J.Tsf.2010.02.053 |
0.318 |
|
2010 |
Lee J, Noh H, Lee S, Park J, Choi K, Pearton S. Dry etching process of GaAs in capacitively coupled BCl3-based plasmas Thin Solid Films. 518: 6488-6491. DOI: 10.1016/J.Tsf.2010.02.003 |
0.34 |
|
2010 |
Pearton SJ, Ren F, Wang Y, Chu BH, Chen KH, Chang CY, Lim W, Lin J, Norton DP. Recent advances in wide bandgap semiconductor biological and gas sensors Progress in Materials Science. 55: 1-59. DOI: 10.1016/J.Pmatsci.2009.08.003 |
0.642 |
|
2010 |
Wang Y, Ren F, Lim W, Pearton S, Baik KH, Hwang S, Gon Seo Y, Jang S. Hydrogen sensing characteristics of non-polar a-plane GaN Schottky diodes Current Applied Physics. 10: 1029-1032. DOI: 10.1016/J.Cap.2009.12.034 |
0.739 |
|
2010 |
Chang CY, Lo CF, Ren F, Pearton SJ, Kravchenko II, Dabiran AM, Cui B, Chow PP. Normally-on/off AlN/GaN high electron mobility transistors Physica Status Solidi (C). 7: 2415-2418. DOI: 10.1002/Pssc.200983901 |
0.39 |
|
2010 |
Pearton SJ, Polyakov AY. Role of Hydrogen in the CVD of Wide Bandgap Nitride Semiconductors Chemical Vapor Deposition. 16: 266-274. DOI: 10.1002/Cvde.201000041 |
0.377 |
|
2009 |
Anderson T, Ren F, Pearton S, Kang BS, Wang HT, Chang CY, Lin J. Advances in Hydrogen, Carbon Dioxide, and Hydrocarbon Gas Sensor Technology Using GaN and ZnO-Based Devices. Sensors (Basel, Switzerland). 9: 4669-94. PMID 22408548 DOI: 10.3390/S90604669 |
0.35 |
|
2009 |
Wang Y, Chu BH, Chen KH, Chang C, Lele TP, Papadi G, Coleman JK, Sheppard BJ, Dungan CF, Pearton SJ, Johnson JW, Ren F. Fast Detection of Perkinsus Marinus, a Prevalent Pathogen of Oysters and Clams from Sea Waters Mrs Proceedings. 1202. DOI: 10.1557/Proc-1202-I09-10 |
0.302 |
|
2009 |
Wang Y, Chu B, Chang C, Chen KH, Zhang Y, Sun Q, Han J, Pearton S, Ren F. High Sensitivity of Hydrogen Sensing Through N-polar GaN Schottky Diodes Mrs Proceedings. 1202. DOI: 10.1557/Proc-1202-I06-06 |
0.391 |
|
2009 |
Chu BH, Lin H, Gwo S, Wang Y, Pearton SJ, Johnson JW, Rajagopal P, Roberts JC, Piner EL, Linthicum KJ, Ren F. Chloride Ion Detection by InN Gated AlGaN/GaN High Electron Mobility Transistors Mrs Proceedings. 1202. DOI: 10.1557/Proc-1202-I06-05 |
0.331 |
|
2009 |
Hung S, Chu BH, Chang C, Lo CF, Chen KH, Pearton SJ, Dabiran A, Chow PP, Chi GC, Ren F. Pressure Sensing with PVDF Gated AlGaN/GaN High Electron Mobility Transistor Mrs Proceedings. 1202. DOI: 10.1557/Proc-1202-I06-03 |
0.358 |
|
2009 |
Pearton SJ, Ren F, Wang Y, Chu BH, Chen KH, Chang CY, Lim W, Lin J. Recent Advances in Wide Bandgap Semiconductor Biological and Gas Sensors Mrs Proceedings. 1202. DOI: 10.1557/Proc-1202-I06-01 |
0.642 |
|
2009 |
Douglas EA, Cheney DP, Chen KHP, Chang CP, Leu LP, Gila BP, Abernathy CR, Pearton SJ. GaAs HEMT Reliability and Degradation Mechanisms after Long Term Stress Testing Mrs Proceedings. 1195. DOI: 10.1557/Proc-1195-B05-04 |
0.656 |
|
2009 |
Cheney D, Gila B, Douglas EA, Ren F, Pearton S. A Comprehensive Approach to HEMT Reliability Testing Mrs Proceedings. 1195. DOI: 10.1557/Proc-1195-B05-03 |
0.76 |
|
2009 |
Lugo FJ, Kim HS, Pearton SJ, Abernathy CR, Gila BP, Norton DP, Wang YL, Ren F. Rectifying ZnO:Ag∕ZnO:Ga Thin-Film Junctions Electrochemical and Solid-State Letters. 12: H188. DOI: 10.1149/1.3097392 |
0.41 |
|
2009 |
Kim H, Ren F, Pearton SJ, Kim J. Self-Annealing in Neutron-Irradiated AlGaN∕GaN High Electron Mobility Transistors Electrochemical and Solid-State Letters. 12: H173. DOI: 10.1149/1.3082498 |
0.377 |
|
2009 |
Polyakov AY, Smirnov NB, Govorkov AV, Kozhukhova EA, Kim HS, Norton DP, Pearton SJ, Belogorokhov AI. Persistent photoconductivity in MgZnO alloys Semiconductors. 43: 577-580. DOI: 10.1134/S1063782609050054 |
0.393 |
|
2009 |
Lo CF, Kim H, Kim J, Chen S, Wang S, Chyi J, Chou BY, Chen KH, Wang YL, Chang CY, Pearton SJ, Kravchenko LI, Jang S, Ren F. Proton irradiation effects on Sb-based heterojunction bipolar transistors Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 27: L33. DOI: 10.1116/1.3246405 |
0.317 |
|
2009 |
Chen KH, Ren F, Pais A, Xie H, Gila BP, Pearton SJ, Johnson JW, Rajagopal P, Roberts JC, Piner EL, Linthicum KJ. Cu-plated through-wafer vias for AlGaN/GaN high electron mobility transistors on Si Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 27: 2166-2169. DOI: 10.1116/1.3212931 |
0.352 |
|
2009 |
Lim W, Douglas EA, Lee J, Jang J, Craciun V, Norton DP, Pearton SJ, Ren F, Son SY, Yuh JH, Shen H, Chang W. Transparent dual-gate InGaZnO thin film transistors: Or gate operation Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 27: 2128-2131. DOI: 10.1116/1.3196787 |
0.787 |
|
2009 |
Han SY, Lee J, Pearton SJ. Electrical properties of nanoscale Au contacts on 4H-SiC Journal of Vacuum Science & Technology B. 27: 1870-1873. DOI: 10.1116/1.3154517 |
0.353 |
|
2009 |
Wright JS, Lim W, Gila BP, Pearton SJ, Ren F, Lai W, Chen L, Hu M, Chen K. Pd-catalyzed hydrogen sensing with InN nanobelts Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 27: L8. DOI: 10.1116/1.3125267 |
0.629 |
|
2009 |
Wang XJ, Vlasenko LS, Pearton SJ, Chen WM, Buyanova IA. Oxygen and zinc vacancies in as-grown ZnO single crystals Journal of Physics D: Applied Physics. 42: 175411. DOI: 10.1088/0022-3727/42/17/175411 |
0.35 |
|
2009 |
Davies RP, Abernathy CR, Pearton SJ, Norton DP, Ivill MP, Ren F. REVIEW OF RECENT ADVANCES IN TRANSITION AND LANTHANIDE METAL–DOPED GaN AND ZnO Chemical Engineering Communications. 196: 1030-1053. DOI: 10.1080/00986440902896956 |
0.334 |
|
2009 |
Polyakov AY, Smirnov NB, Govorkov AV, Markov AV, Kozhukhova EA, Gazizov IM, Kolin NG, Merkurisov DI, Boiko VM, Korulin AV, Zalyetin VM, Pearton SJ, Lee I, Dabiran AM, Chow PP. Alpha particle detection with GaN Schottky diodes Journal of Applied Physics. 106: 103708. DOI: 10.1063/1.3261806 |
0.405 |
|
2009 |
Herrero AM, Gila BP, Gerger A, Scheuermann A, Davies R, Abernathy CR, Pearton SJ, Ren F. Environmental stability of candidate dielectrics for GaN-based device applications Journal of Applied Physics. 106: 074105. DOI: 10.1063/1.3236568 |
0.413 |
|
2009 |
Lin Y, Flitsyian E, Chernyak L, Malinauskas T, Aleksiejunas R, Jarasiunas K, Lim W, Pearton SJ, Gartsman K. Optical and electron beam studies of carrier transport in quasibulk GaN Applied Physics Letters. 95: 092101. DOI: 10.1063/1.3220062 |
0.658 |
|
2009 |
Chang CY, Wang Y, Gila BP, Gerger AP, Pearton SJ, Lo CF, Ren F, Sun Q, Zhang Y, Han J. Effect of gate orientation on dc characteristics of Si-doped, nonpolar AlGaN/GaN metal-oxide semiconductor high electron mobility transistors Applied Physics Letters. 95: 082110. DOI: 10.1063/1.3216576 |
0.424 |
|
2009 |
Chang CY, Pearton SJ, Lo CF, Ren F, Kravchenko II, Dabiran AM, Wowchak AM, Cui B, Chow PP. Development of enhancement mode AlN/GaN high electron mobility transistors Applied Physics Letters. 94: 263505. DOI: 10.1063/1.3168648 |
0.365 |
|
2009 |
Lan YL, Lin HC, Liu HH, Lee GY, Ren F, Pearton SJ, Chang MN, Chyi JI. Low-resistance smooth-surface Ti/Al/Cr/Mo/Au n -type Ohmic contact to AlGaN/GaN heterostructures Applied Physics Letters. 94. DOI: 10.1063/1.3155195 |
0.331 |
|
2009 |
Polyakov AY, Govorkov AV, Smirnov NB, Markov AV, Lee I, Ju J, Karpov SY, Shmidt NM, Pearton SJ. Properties of undoped GaN/InGaN multi-quantum-wells and GaN/InGaN p-n junctions prepared by epitaxial lateral overgrowth Journal of Applied Physics. 105: 123708. DOI: 10.1063/1.3153967 |
0.374 |
|
2009 |
Wang YL, Chu BH, Chen KH, Chang CY, Lele TP, Papadi G, Coleman JK, Sheppard BJ, Dungen CF, Pearton SJ, Johnson JW, Rajagopal P, Roberts JC, Piner EL, Linthicum KJ, et al. Fast detection of a protozoan pathogen, Perkinsus marinus, using AlGaN/GaN high electron mobility transistors Applied Physics Letters. 94. DOI: 10.1063/1.3153130 |
0.313 |
|
2009 |
Wang Y, Ren F, Zhang U, Sun Q, Yerino CD, Ko TS, Cho YS, Lee IH, Han J, Pearton SJ. Improved hydrogen detection sensitivity in N-polar GaN Schottky diodes Applied Physics Letters. 94: 212108. DOI: 10.1063/1.3148369 |
0.37 |
|
2009 |
Jang JH, Son SY, Lim W, Phen MS, Siebein K, Pearton SJ, Craciun V. Fabrication of compositional graded Si1−xGex layers by using thermal oxidation Applied Physics Letters. 94: 202104. DOI: 10.1063/1.3139070 |
0.644 |
|
2009 |
Polyakov AY, Markov AV, Mezhennyi MV, Govorkov AV, Pavlov VF, Smirnov NB, Donskov AA, D’yakonov LI, Kozlova YP, Malakhov SS, Yugova TG, Osinsky VI, Gorokh GG, Lyahova NN, Mityukhlyaev VB, ... Pearton SJ, et al. Nonpolar GaN grown on Si by hydride vapor phase epitaxy using anodized Al nanomask Applied Physics Letters. 94: 022114. DOI: 10.1063/1.3072614 |
0.348 |
|
2009 |
Hung SC, Chou BH, Chang CY, Lo CF, Chen KH, Wang YL, Pearton SJ, Dabiran A, Chow PP, Chi GC, Ren F. Minipressure sensor using AlGaN/GaN high electron mobility transistors Applied Physics Letters. 94: 43903. DOI: 10.1063/1.3072606 |
0.34 |
|
2009 |
Pan C, Chen J, Chi G, Chou B, Pong B, Ren F, Chang C, Pearton S. Optical investigation of nitrogen ion implanted bulk ZnO Vacuum. 83: 1073-1075. DOI: 10.1016/J.Vacuum.2009.02.002 |
0.333 |
|
2009 |
Chen JY, Pan CJ, Tsao FC, Kuo CH, Chi GC, Pong BJ, Chang CY, Norton DP, Pearton SJ. Characterization of ZnO nanowires grown on Si (100) with and without Au catalyst Vacuum. 83: 1076-1079. DOI: 10.1016/J.Vacuum.2009.02.001 |
0.324 |
|
2009 |
Huang P, Chen C, Chen J, Chi G, Pan C, Kuo C, Chen L, Hsu C, Chen K, Hung S, Chang C, Pearton S, Ren F. Optical and structural properties of Mg-ion implanted GaN nanowires Vacuum. 83: 797-800. DOI: 10.1016/J.Vacuum.2008.07.009 |
0.373 |
|
2009 |
Yakimov E, Vergeles P, Govorkov A, Polyakov A, Smirnov N, Lee I, Ro Lee C, Pearton S. EBIC and CL studies of ELOG GaN films Superlattices and Microstructures. 45: 308-313. DOI: 10.1016/J.Spmi.2008.09.008 |
0.303 |
|
2009 |
Wang Y, Chu B, Chang C, Chen K, Zhang Y, Sun Q, Han J, Pearton S, Ren F. Hydrogen sensing of N-polar and Ga-polar GaN Schottky diodes Sensors and Actuators B: Chemical. 142: 175-178. DOI: 10.1016/J.Snb.2009.07.040 |
0.336 |
|
2009 |
Wright J, Lim W, Gila B, Pearton S, Johnson JL, Ural A, Ren F. Hydrogen sensing with Pt-functionalized GaN nanowires Sensors and Actuators B: Chemical. 140: 196-199. DOI: 10.1016/J.Snb.2009.04.009 |
0.661 |
|
2009 |
Yakimov E, Vergeles P, Govorkov A, Polyakov A, Smirnov N, Lee I, Lee CR, Pearton S. EBIC investigations of defect distribution in ELOG GaN films Physica B: Condensed Matter. 404: 4916-4918. DOI: 10.1016/J.Physb.2009.08.215 |
0.362 |
|
2009 |
Pan C, Chen C, Chen J, Huang P, Chi G, Chang C, Ren F, Pearton S. Optical and structural properties of Eu-diffused and doped ZnO nanowires Applied Surface Science. 256: 187-190. DOI: 10.1016/J.Apsusc.2009.07.108 |
0.374 |
|
2009 |
Hung SC, Huang PJ, Chan CE, Uen WY, Ren F, Pearton SJ, Yang TN, Chiang CC, Lan SM, Chi GC. Surface morphology and optical properties of ZnO epilayers grown on Si(1 1 1) by metal organic chemical vapor deposition Applied Surface Science. 255: 6809-6813. DOI: 10.1016/J.Apsusc.2009.02.088 |
0.399 |
|
2009 |
Baik KH, Pearton SJ. Dry etching characteristics of GaN for blue/green light-emitting diode fabrication Applied Surface Science. 255: 5948-5951. DOI: 10.1016/J.Apsusc.2009.01.041 |
0.618 |
|
2009 |
Polyakov AY, Smirnov NB, Govorkov AV, Kozhukhova EA, Belogorokhov AI, Norton DP, Kim HS, Pearton SJ. Shallow and Deep Centers in As-Grown and Annealed MgZnO/ZnO Structures with Quantum Wells Journal of Electronic Materials. 39: 601-607. DOI: 10.1007/S11664-009-0973-2 |
0.405 |
|
2008 |
Pearton SJ, Kang BS, Gila BP, Norton DP, Kryliouk O, Ren F, Heo YW, Chang CY, Chi GC, Wang WM, Chen LC. GaN, ZnO and InN nanowires and devices. Journal of Nanoscience and Nanotechnology. 8: 99-110. PMID 18468056 DOI: 10.1166/Jnn.2008.N01 |
0.333 |
|
2008 |
Pearton SJ, Lim WT, Wang YL, Shoo K, Norton D, Lee JW, Ren F, Zavada JM. Transparent Thin Film Transistors Based on InZnO for Flexible Electronics Key Engineering Materials. 380: 99-109. DOI: 10.4028/Www.Scientific.Net/Kem.380.99 |
0.678 |
|
2008 |
Stewart AD, Scheuermann AG, Gerger AP, Gila BP, Abernathy CR, Pearton SJ. Optimization of Samarium Oxide Deposition on Gallium Arsenide Mrs Proceedings. 1108. DOI: 10.1557/Proc-1108-A10-03 |
0.398 |
|
2008 |
Pearton S, Voss L, Khanna R, Lim W, Stafford L, Ren F, Dabiran A, Osinsky A. High Temperature Stable Contacts for GaN HEMTs and LEDs Mrs Proceedings. 1108. DOI: 10.1557/Proc-1108-A01-04 |
0.798 |
|
2008 |
Pearton SJ, Polyakov AY. Effects of radiation damage in GaN and related materials International Journal of Materials and Structural Integrity. 2: 93. DOI: 10.1504/Ijmsi.2008.018902 |
0.32 |
|
2008 |
Hung SC, Wang YL, Hicks B, Pearton SJ, Ren F, Johnson JW, Rajagopal P, Roberts JC, Piner EL, Linthicum KJ, Chi GC. Integration of Selective Area Anodized AgCl Thin Film with AlGaN/GaN HEMTs for Chloride Ion Detection Electrochemical and Solid-State Letters. 11: H241. DOI: 10.1149/1.2938726 |
0.37 |
|
2008 |
Kim HY, Kim J, Yun SP, Kim KR, Anderson TJ, Ren F, Pearton SJ. AlGaN/GaN high electron mobility transistors irradiated with 17 MeV protons Journal of the Electrochemical Society. 155: H513-H515. DOI: 10.1149/1.2917256 |
0.353 |
|
2008 |
Wang YL, Lim W, Covert LN, Anderson TJ, Lin J, Pearton SJ, Norton DP, Ren F. Room temperature deposited enhancement mode and depletion mode indium znic oxide thin film transistors Ecs Transactions. 13: 159-164. DOI: 10.1149/1.2913090 |
0.601 |
|
2008 |
Lim W, Kim S, Wang Y, Lee JW, Norton DP, Pearton SJ, Ren F, Kravchenko II. High-Performance Indium Gallium Zinc Oxide Transparent Thin-Film Transistors Fabricated by Radio-Frequency Sputtering Journal of the Electrochemical Society. 155: H383. DOI: 10.1149/1.2903294 |
0.7 |
|
2008 |
Wang Y, Kim HS, Norton DP, Pearton SJ, Ren F. Hydrogen Effects on the Optical and Electrical Properties of ZnO Light-Emitting Diodes Electrochemical and Solid-State Letters. 11: H88. DOI: 10.1149/1.2837657 |
0.392 |
|
2008 |
Wang Y, Covert LN, Anderson TJ, Lim W, Lin J, Pearton SJ, Norton DP, Zavada JM, Ren F. RF Characteristics of Room-Temperature-Deposited, Small Gate Dimension Indium Zinc Oxide TFTs Electrochemical and Solid-State Letters. 11: H60. DOI: 10.1149/1.2825474 |
0.688 |
|
2008 |
Kang BS, Wang HT, Ren F, Gila BP, Abernathy CR, Pearton SJ, Dennis DM, Johnson JW, Rajagopal P, Roberts JC, Piner EL, Linthicum KJ. Exhaled-Breath Detection Using AlGaN∕GaN High Electron Mobility Transistors Integrated with a Peltier Element Electrochemical and Solid-State Letters. 11: J19. DOI: 10.1149/1.2824500 |
0.332 |
|
2008 |
Donskov AA, D’yakonov LI, Govorkov AV, Kozlova YP, Malakhov SS, Markov AV, Mezhennyi MV, Pavlov VF, Polyakov AY, Smirnov NB, Yugova TG, Pearton SJ. Improved crystalline quality nonpolar a-GaN films grown by hydride vapor phase epitaxy Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 26: 1937-1941. DOI: 10.1116/1.3021367 |
0.332 |
|
2008 |
Polyakov AY, Smirnov NB, Govorkov AV, Markov AV, Yakimov EB, Vergeles PS, Lee I, Lee CR, Pearton SJ. Effects of laterally overgrown n-GaN thickness on defect and deep level concentrations Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 26: 990. DOI: 10.1116/1.2919148 |
0.391 |
|
2008 |
Voss LF, Ip K, Pearton SJ, Shul RJ, Overberg ME, Baca AG, Sanchez C, Stevens J, Martinez M, Armendariz MG, Wouters GA. SiC via fabrication for wide-band-gap high electron mobility transistor/microwave monolithic integrated circuit devices Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 26: 487-494. DOI: 10.1116/1.2837849 |
0.694 |
|
2008 |
Pearton SJ, Norton DP, Tien L, Guo J. Modeling and Fabrication of ZnO Nanowire Transistors Ieee Transactions On Electron Devices. 55: 3012-3019. DOI: 10.1109/Ted.2008.2005157 |
0.403 |
|
2008 |
Wang Y, Ren F, Kim HS, Norton DP, Pearton SJ. Materials and Process Development for ZnMgO/ZnO Light-Emitting Diodes Ieee Journal of Selected Topics in Quantum Electronics. 14: 1048-1052. DOI: 10.1109/Jstqe.2008.919736 |
0.41 |
|
2008 |
Ivill M, Pearton SJ, Rawal S, Leu L, Sadik P, Das R, Hebard AF, Chisholm M, Budai JD, Norton DP. Structure and magnetism of cobalt-doped ZnO thin films New Journal of Physics. 10. DOI: 10.1088/1367-2630/10/6/065002 |
0.359 |
|
2008 |
Hite JK, Allums KK, Thaler GT, Abernathy CR, Pearton SJ, Frazier RM, Dwivedi R, Wilkins R, Zavada JM. Effects of proton irradiation on the magnetic properties of GaGdN and GaCrN New Journal of Physics. 10: 055005. DOI: 10.1088/1367-2630/10/5/055005 |
0.313 |
|
2008 |
Lim W, Douglas EA, Kim S, Norton DP, Pearton SJ, Ren F, Shen H, Chang WH. Low-temperature-fabricated InGaZnO4 thin film transistors on polyimide clean-room tape Applied Physics Letters. 93: 252103. DOI: 10.1063/1.3054167 |
0.796 |
|
2008 |
Lim W, Wright JS, Gila BP, Pearton SJ, Ren F, Lai W, Chen L, Hu M, Chen K. Selective-hydrogen sensing at room temperature with Pt-coated InN nanobelts Applied Physics Letters. 93: 202109. DOI: 10.1063/1.3033548 |
0.663 |
|
2008 |
Chu BH, Leu LC, Chang CY, Lugo F, Norton D, Lele T, Keselowsky B, Pearton SJ, Ren F. Conformable coating of SiO2 on hydrothermally grown ZnO nanorods Applied Physics Letters. 93. DOI: 10.1063/1.3033407 |
0.365 |
|
2008 |
Polyakov AY, Smirnov NB, Govorkov AV, Markov AV, Pearton SJ, Dabiran AM, Wowchak AM, Cui B, Osinsky AV, Chow PP, Kolin NG, Boiko VM, Merkurisov DI. Electron irradiation of AlGaN∕GaN and AlN∕GaN heterojunctions Applied Physics Letters. 93: 152101. DOI: 10.1063/1.3000613 |
0.374 |
|
2008 |
Lim W, Jang JH, Kim S, Norton DP, Craciun V, Pearton SJ, Ren F, Shen H. High performance indium gallium zinc oxide thin film transistors fabricated on polyethylene terephthalate substrates Applied Physics Letters. 93: 082102. DOI: 10.1063/1.2975959 |
0.697 |
|
2008 |
Lim W, Wright JS, Gila BP, Johnson JL, Ural A, Anderson T, Ren F, Pearton SJ. Room temperature hydrogen detection using Pd-coated GaN nanowires Applied Physics Letters. 93. DOI: 10.1063/1.2975173 |
0.67 |
|
2008 |
Polyakov AY, Smirnov NB, Govorkov AV, Markov AV, Yugova TG, Dabiran AM, Wowchak AM, Cui B, Osinsky AV, Chow PP, Pearton SJ, Scherbatchev KD, Bublik VT. Electrical and structural properties of AlN/GaN and AlGaN/GaN heterojunctions Journal of Applied Physics. 104: 053702. DOI: 10.1063/1.2973463 |
0.396 |
|
2008 |
Chu BH, Kang BS, Ren F, Chang CY, Wang YL, Pearton SJ, Glushakov AV, Dennis DM, Johnson JW, Rajagopal P, Roberts JC, Piner EL, Linthicum KJ. Enzyme-based lactic acid detection using AlGaN∕GaN high electron mobility transistors with ZnO nanorods grown on the gate region Applied Physics Letters. 93: 042114. DOI: 10.1063/1.2966158 |
0.306 |
|
2008 |
Kang BS, Wang HT, Ren F, Pearton SJ. Electrical detection of biomaterials using AlGaN/GaN high electron mobility transistors Journal of Applied Physics. 104: 031101. DOI: 10.1063/1.2959429 |
0.329 |
|
2008 |
Buyanova I, Wang X, Pozina G, Chen W, Lim W, Norton DP, Pearton SJ, Osinsky A, Dong JW, Hertog B. Effects of hydrogen on the optical properties of ZnCdO∕ZnO quantum wells grown by molecular beam epitaxy Applied Physics Letters. 92: 261912. DOI: 10.1063/1.2953178 |
0.643 |
|
2008 |
Tsao FC, Chen JY, Kuo CH, Chi GC, Pan CJ, Huang PJ, Tun CJ, Pong BJ, Hsueh TH, Chang CY, Pearton SJ, Ren F. Residual strain in ZnO nanowires grown by catalyst-free chemical vapor deposition on GaN/sapphire (0001) Applied Physics Letters. 92. DOI: 10.1063/1.2936090 |
0.355 |
|
2008 |
Hung SC, Wang YL, Hicks B, Pearton SJ, Dennis DM, Ren F, Johnson JW, Rajagopal P, Roberts JC, Piner EL, Linthicum KJ, Chi GC. Detection of chloride ions using an integrated Ag∕AgCl electrode with AlGaN∕GaN high electron mobility transistors Applied Physics Letters. 92: 193903. DOI: 10.1063/1.2927372 |
0.326 |
|
2008 |
Chen JY, Chi GC, Huang PJ, Chen MY, Hung SC, Nien CH, Chen MC, Lan SM, Pong BJ, Pan CJ, Tun CJ, Ren F, Chang CY, Pearton SJ. Microstructure of InN quantum dots grown on AlN buffer layers by metal organic vapor phase epitaxy Applied Physics Letters. 92: 162103. DOI: 10.1063/1.2916708 |
0.31 |
|
2008 |
Polyakov AY, Smirnov NB, Govorkov AV, Kozhukhova EA, Belogorokhov AI, Kim HS, Norton DP, Pearton SJ. Annealing effects on electrical properties of MgZnO films grown by pulsed laser deposition Journal of Applied Physics. 103: 083704. DOI: 10.1063/1.2906180 |
0.39 |
|
2008 |
Lim W, Norton DP, Jang JH, Craciun V, Pearton SJ, Ren F. Carrier concentration dependence of Ti∕Au specific contact resistance on n-type amorphous indium zinc oxide thin films Applied Physics Letters. 92: 122102. DOI: 10.1063/1.2902322 |
0.689 |
|
2008 |
Kim HS, Lugo F, Pearton SJ, Norton DP, Wang Y, Ren F. Phosphorus doped ZnO light emitting diodes fabricated via pulsed laser deposition Applied Physics Letters. 92: 112108. DOI: 10.1063/1.2900711 |
0.389 |
|
2008 |
Wang Y, Kim HS, Norton DP, Pearton SJ, Ren F. Dielectric passivation effects on ZnO light emitting diodes Applied Physics Letters. 92: 112101. DOI: 10.1063/1.2898709 |
0.397 |
|
2008 |
Yakimov EB, Vergeles PS, Polyakov AY, Smirnov NB, Govorkov AV, Lee I, Lee CR, Pearton SJ. Donor nonuniformity in undoped and Si doped n-GaN prepared by epitaxial lateral overgrowth Applied Physics Letters. 92: 042118. DOI: 10.1063/1.2840190 |
0.376 |
|
2008 |
Polyakov AY, Smirnov NB, Govorkov AV, Yugova TG, Markov AV, Dabiran AM, Wowchak AM, Cui B, Xie J, Osinsky AV, Chow PP, Pearton SJ. Electrical properties of GaN (Fe) buffers for AlGaN∕GaN high electron mobility transistor structures Applied Physics Letters. 92: 042110. DOI: 10.1063/1.2838734 |
0.308 |
|
2008 |
Lim W, Norton DP, Pearton SJ, Wang XJ, Chen WM, Buyanova IA, Osinsky A, Dong JW, Hertog B, Thompson AV, Schoenfeld WV, Wang YL, Ren F. Migration and luminescence enhancement effects of deuterium in ZnOZnCdO quantum wells Applied Physics Letters. 92. DOI: 10.1063/1.2836946 |
0.665 |
|
2008 |
Kim H, Lugo F, Pearton S, Norton D, Ren F. The effects of buffer growth parameters on heteroepitaxial ZnO films grown by pulsed laser deposition Vacuum. 82: 1259-1263. DOI: 10.1016/J.Vacuum.2008.02.005 |
0.371 |
|
2008 |
Lee I, Polyakov AY, Smirnov NB, Govorkov AV, Markov AV, Pearton SJ. Deep-level studies in GaN layers grown by epitaxial lateral overgrowth Thin Solid Films. 516: 2035-2040. DOI: 10.1016/J.Tsf.2007.07.144 |
0.381 |
|
2008 |
Stafford L, Lim W, Pearton S, Song J, Park J, Heo Y, Lee J, Kim J, Chicoine M, Schiettekatte F. Deep etch-induced damage during ion-assisted chemical etching of sputtered indium–zinc–oxide films in Ar/CH4/H2 plasmas Thin Solid Films. 516: 2869-2873. DOI: 10.1016/J.Tsf.2007.05.071 |
0.681 |
|
2008 |
Chen KH, Wang HW, Kang BS, Chang CY, Wang YL, Lele TP, Ren F, Pearton SJ, Dabiran A, Osinsky A, Chow PP. Low Hg(II) ion concentration electrical detection with AlGaN/GaN high electron mobility transistors Sensors and Actuators, B: Chemical. 134: 386-389. DOI: 10.1016/J.Snb.2008.05.012 |
0.337 |
|
2008 |
Arjunan AC, Singh D, Wang HT, Ren F, Kumar P, Singh RK, Pearton SJ. Improved free-standing GaN Schottky diode characteristics using chemical mechanical polishing Applied Surface Science. 255: 3085-3089. DOI: 10.1016/J.Apsusc.2008.08.096 |
0.399 |
|
2008 |
Hung SC, Huang PJ, Chan CE, Uen WY, Ren F, Pearton SJ, Yang TN, Chiang CC, Lan SM, Chi GC. Nanostructured surface morphology of ZnO grown on p-type GaN and Si by metal organic chemical vapor deposition Applied Surface Science. 255: 3016-3018. DOI: 10.1016/J.Apsusc.2008.08.086 |
0.421 |
|
2008 |
Anderson TJ, Wang HT, Kang BS, Ren F, Pearton SJ, Osinsky A, Dabiran A, Chow PP. Effect of bias voltage polarity on hydrogen sensing with AlGaN/GaN Schottky diodes Applied Surface Science. 255: 2524-2526. DOI: 10.1016/J.Apsusc.2008.07.173 |
0.323 |
|
2008 |
Erie J, Li Y, Ivill M, Kim H, Pearton S, Gila B, Norton D, Ren F. Properties of Zn3N2-doped ZnO films deposited by pulsed laser deposition Applied Surface Science. 254: 5941-5945. DOI: 10.1016/J.Apsusc.2008.03.161 |
0.373 |
|
2008 |
Lim W, Sadik P, Norton D, Gila B, Pearton S, Kravchenko I, Ren F. RF-sputtered CrB2 diffusion barrier for Ni/Au Ohmic contacts on p-CuCrO2 Applied Surface Science. 254: 5211-5215. DOI: 10.1016/J.Apsusc.2008.02.028 |
0.653 |
|
2008 |
Voss LF, Stafford L, Gila BP, Pearton SJ, Ren F. Ir-based diffusion barriers for Ohmic contacts to p-GaN Applied Surface Science. 254: 4134-4138. DOI: 10.1016/J.Apsusc.2007.12.046 |
0.704 |
|
2008 |
Lim W, Wang Y, Ren F, Norton D, Kravchenko I, Zavada J, Pearton S. Indium zinc oxide thin films deposited by sputtering at room temperature Applied Surface Science. 254: 2878-2881. DOI: 10.1016/J.Apsusc.2007.10.032 |
0.686 |
|
2008 |
Lim W, Craciun V, Siebein K, Gila B, Norton D, Pearton S, Ren F. Surface and bulk thermal annealing effects on ZnO crystals Applied Surface Science. 254: 2396-2400. DOI: 10.1016/J.Apsusc.2007.09.066 |
0.681 |
|
2008 |
Lim W, Sadik P, Norton D, Pearton S, Ren F. Dry etching of CuCrO2 thin films Applied Surface Science. 254: 2359-2363. DOI: 10.1016/J.Apsusc.2007.09.034 |
0.692 |
|
2008 |
Johnson JL, Choi Y, Ural A, Lim W, Wright J, Gila B, Ren F, Pearton S. Growth and Characterization of GaN Nanowires for Hydrogen Sensors Journal of Electronic Materials. 38: 490-494. DOI: 10.1007/S11664-008-0596-Z |
0.689 |
|
2008 |
Pearton S, Lim W, Wright J, Tien L, Kim H, Norton D, Wang H, Kang B, Ren F, Jun J, Lin J, Osinsky A. ZnO and Related Materials for Sensors and Light-Emitting Diodes Journal of Electronic Materials. 37: 1426-1432. DOI: 10.1007/S11664-008-0416-5 |
0.654 |
|
2008 |
Tien LC, Pearton SJ, Norton DP, Ren F. Synthesis and microstructure of vertically aligned ZnO nanowires grown by high-pressure-assisted pulsed-laser deposition Journal of Materials Science. 43: 6925-6932. DOI: 10.1007/S10853-008-2988-0 |
0.36 |
|
2008 |
Kim H, Pearton S, Norton D, Ren F. Pulsed laser deposition of high-quality ZnO films using a high temperature deposited ZnO buffer layer Applied Physics A. 91: 255-259. DOI: 10.1007/S00339-008-4427-0 |
0.386 |
|
2008 |
Kim H, Erie J, Pearton S, Norton D, Ren F. Investigation of electrical and optical properties of ZnO thin films grown with O2/O3 gas mixture Applied Physics A. 91: 251-254. DOI: 10.1007/S00339-008-4426-1 |
0.328 |
|
2008 |
Tien L, Pearton S, Norton D, Ren F. Synthesis and characterization of single crystalline SnO2 nanorods by high-pressure pulsed laser deposition Applied Physics A. 91: 29-32. DOI: 10.1007/S00339-007-4378-X |
0.329 |
|
2008 |
Voss LF, Stafford L, Hlad M, Gila BP, Abernathy CR, Pearton SJ, Ren F, Kravchenko I. High temperature Ohmic contacts to p-type GaN for use in light emitting applications Physica Status Solidi (C) Current Topics in Solid State Physics. 5: 2241-2243. DOI: 10.1002/Pssc.200778644 |
0.696 |
|
2008 |
Erie JM, Ivill M, Kim HS, Pearton SJ, Gila B, Ren F, Norton DP. Acceptor state formation in arsenic-doped ZnO films grown using ozone Physica Status Solidi (a). 205: 1647-1652. DOI: 10.1002/Pssa.200723663 |
0.356 |
|
2007 |
Pearton SJ, Norton DP, Ivill MP, Hebard AF, Chen WM, Buyanova IA, Zavada JM. Transition metal doped ZnO for spintronics Materials Research Society Symposium Proceedings. 999: 43-54. DOI: 10.1557/Proc-0999-K03-04 |
0.363 |
|
2007 |
Polyakov AY, Smirnov NB, Govorkov AV, Kozhukhova EA, Belogorokhov AI, Markov AV, Kim HS, Norton DP, Pearton SJ. Electrical Properties of ZnO(P) and ZnMgO(P) Films Grown by Pulsed Laser Deposition Journal of the Electrochemical Society. 154: H825. DOI: 10.1149/1.2756976 |
0.368 |
|
2007 |
Lim W, Wang Y, Ren F, Norton DP, Kravchenko II, Zavada JM, Pearton SJ. Room-Temperature-Deposited Indium-Zinc Oxide Thin Films with Controlled Conductivity Electrochemical and Solid-State Letters. 10: H267. DOI: 10.1149/1.2750441 |
0.677 |
|
2007 |
Polyakov AY, Smirnov NB, Govorkov AV, Markov AV, Yugova TG, Petrova EA, Dabiran AM, Wowchak AM, Osinsky AV, Chow PP, Pearton SJ, Shcherbatchev KD, Bublik VT. Semi-Insulating, Fe-Doped Buffer Layers Grown by Molecular Beam Epitaxy Journal of the Electrochemical Society. 154: H749. DOI: 10.1149/1.2749094 |
0.355 |
|
2007 |
Khanna R, Gila BP, Stafford L, Pearton SJ, Ren F, Kravchenko II. Ir-Based Schottky and Ohmic Contacts on n-GaN Journal of the Electrochemical Society. 154: H584. DOI: 10.1149/1.2734102 |
0.406 |
|
2007 |
Lim WT, Sadik PW, Norton DP, Pearton SJ, Wang YL, Ren F. Reaction-Limited Wet Etching of CuCrO[sub 2] Electrochemical and Solid-State Letters. 10: H178. DOI: 10.1149/1.2719551 |
0.647 |
|
2007 |
Khanna R, Stafford L, Pearton SJ, Wang HT, Ren F, Westermann R, Johnson D, Constantine C. Reduction of dry etch damage to GaAs using pulse-time modulated plasmas Electrochemical and Solid-State Letters. 10: 139-141. DOI: 10.1149/1.2666657 |
0.373 |
|
2007 |
Wright JS, Khanna R, Stafford L, Gila BP, Norton DP, Pearton SJ, Ren F, Kravchenko II. Ir∕Au Ohmic Contacts on Bulk, Single-Crystal n-Type ZnO Journal of the Electrochemical Society. 154: H161. DOI: 10.1149/1.2424414 |
0.406 |
|
2007 |
Govorkov AV, Polyakov AY, Yugova TG, Smirnov NB, Petrova EA, Mezhennyi MV, Markov AV, Lee I-, Pearton SJ. Identification of dislocations and their influence on the recombination of charge carriers in gallium nitride Journal of Surface Investigation. X-Ray, Synchrotron and Neutron Techniques. 1: 380-385. DOI: 10.1134/S1027451007040039 |
0.327 |
|
2007 |
Polyakov AY, Smirnov NB, Belogorokhov AI, Govorkov AV, Kozhukhova EA, Osinsky AV, Xie JQ, Hertog B, Pearton SJ. Electrical properties and deep traps in ZnO films grown by molecular beam epitaxy Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 25: 1794. DOI: 10.1116/1.2790918 |
0.406 |
|
2007 |
Stafford L, Lim WT, Pearton SJ, Chicoine M, Gujrathi S, Schiettekatte F, Park J, Song J, Heo Y, Lee J, Kim J, Kravchenko II. Influence of the film properties on the plasma etching dynamics of rf-sputtered indium zinc oxide layers Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 25: 659-665. DOI: 10.1116/1.2736679 |
0.361 |
|
2007 |
Polyakov AY, Smirnov NB, Govorkov AV, Vdovin VI, Markov AV, Shlensky AA, Prebble E, Hanser D, Zavada JM, Pearton SJ. Properties of Fe-doped, thick, freestanding GaN crystals grown by hydride vapor phase epitaxy Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 25: 686. DOI: 10.1116/1.2718962 |
0.311 |
|
2007 |
Polyakov AY, Smirnov NB, Govorkov AV, Markov AV, Pearton SJ, Kolin NG, Merkurisov DI, Boiko VM, Lee C, Lee I. Fast neutron irradiation effects in n-GaN Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 25: 436. DOI: 10.1116/1.2713406 |
0.345 |
|
2007 |
Polyakov AY, Smirnov NB, Govorkov AV, Shcherbatchev KD, Bublik VT, Voronova MI, Dabiran AM, Osinsky AV, Pearton SJ. Electrical, photoelectrical, and luminescent properties of doped p-type GaN superlattices Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 25: 69. DOI: 10.1116/1.2406062 |
0.385 |
|
2007 |
Pearton SJ, Norton DP, Ivill MP, Hebard AF, Zavada JM, Chen WM, Buyanova IA. ZnO doped with transition metal ions Ieee Transactions On Electron Devices. 54: 1040-1048. DOI: 10.1109/Ted.2007.894371 |
0.318 |
|
2007 |
Kang BS, Wang HT, Ren F, Pearton SJ, Morey TE, Dennis DM, Johnson JW, Rajagopal P, Roberts JC, Piner EL, Linthicum KJ. Enzymatic glucose detection using ZnO nanorods on the gate region of AlGaN∕GaN high electron mobility transistors Applied Physics Letters. 91: 252103. DOI: 10.1063/1.2825574 |
0.314 |
|
2007 |
Kim HS, Pearton SJ, Norton DP, Ren F. Behavior of rapid thermal annealed ZnO:P films grown by pulsed laser deposition Journal of Applied Physics. 102: 104904. DOI: 10.1063/1.2815676 |
0.39 |
|
2007 |
Lopatiuk-Tirpak O, Chernyak L, Wang YL, Ren F, Pearton SJ, Gartsman K. Doping level dependence of electron irradiation-induced minority carrier diffusion length increase in Mg-doped GaN Applied Physics Letters. 91: 92107. DOI: 10.1063/1.2776866 |
0.348 |
|
2007 |
Zavada JM, Nepal N, Ugolini C, Lin JY, Jiang HX, Davies R, Hite J, Abernathy CR, Pearton SJ, Brown EE, Hömmerich U. Optical and magnetic behavior of erbium-doped GaN epilayers grown by metal-organic chemical vapor deposition Applied Physics Letters. 91. DOI: 10.1063/1.2767992 |
0.356 |
|
2007 |
Wang Y, Ren F, Lim W, Norton DP, Pearton SJ, Kravchenko II, Zavada JM. Room temperature deposited indium zinc oxide thin film transistors Applied Physics Letters. 90: 232103. DOI: 10.1063/1.2746084 |
0.698 |
|
2007 |
Voss LF, Stafford L, Khanna R, Gila BP, Abernathy CR, Pearton SJ, Ren F, Kravchenko II. Ohmic contacts to p -type GaN based on TaN, TiN, and ZrN Applied Physics Letters. 90. DOI: 10.1063/1.2742572 |
0.701 |
|
2007 |
Ivill M, Pearton SJ, Heo YW, Kelly J, Hebard AF, Norton DP. Magnetization dependence on carrier doping in epitaxial ZnO thin films co-doped with Mn and P Journal of Applied Physics. 101. DOI: 10.1063/1.2739302 |
0.363 |
|
2007 |
Sadik PW, Pearton SJ, Norton DP, Lambers E, Ren F. Functionalizing Zn- and O-terminated ZnO with thiols Journal of Applied Physics. 101: 104514. DOI: 10.1063/1.2736893 |
0.31 |
|
2007 |
Lopatiuk-Tirpak O, Chernyak L, Wang YL, Ren F, Pearton SJ, Gartsman K, Feldman Y. Cathodoluminescence studies of carrier concentration dependence for the electron-irradiation effects in p-GaN Applied Physics Letters. 90. DOI: 10.1063/1.2733620 |
0.352 |
|
2007 |
Yakimov EB, Vergeles PS, Polyakov AY, Smirnov NB, Govorkov AV, Lee I, Lee CR, Pearton SJ. Spatial variations of doping and lifetime in epitaxial laterally overgrown GaN Applied Physics Letters. 90: 152114. DOI: 10.1063/1.2722668 |
0.347 |
|
2007 |
Lim WT, Stafford L, Sadik PW, Norton DP, Pearton SJ, Wang YL, Ren F. Ni∕Au Ohmic contacts to p-type Mg-doped CuCrO2 epitaxial layers Applied Physics Letters. 90: 142101. DOI: 10.1063/1.2719150 |
0.651 |
|
2007 |
Stafford L, Margot J, Delprat S, Chaker M, Pearton SJ. Influence of redeposition on the plasma etching dynamics Journal of Applied Physics. 101: 83303. DOI: 10.1063/1.2719015 |
0.3 |
|
2007 |
Polyakov AY, Smirnov NB, Govorkov AV, Belogorokhov AI, Kozhukhova EA, Markov AV, Osinsky A, Dong JW, Pearton SJ. Persistent photoconductivity in p-type ZnO(N) grown by molecular beam epitaxy Applied Physics Letters. 90: 132103. DOI: 10.1063/1.2717089 |
0.373 |
|
2007 |
Wang YL, Ren F, Kim HS, Pearton SJ, Norton DP. Incorporation and drift of hydrogen at low temperatures in ZnO Applied Physics Letters. 90: 092116. DOI: 10.1063/1.2711201 |
0.373 |
|
2007 |
Yoon Y, Lin J, Pearton SJ, Guo J. Role of grain boundaries in ZnO nanowire field-effect transistors Journal of Applied Physics. 101: 024301. DOI: 10.1063/1.2422747 |
0.318 |
|
2007 |
Wang HT, Anderson TJ, Ren F, Li C, Low ZN, Lin J, Gila BP, Pearton SJ, Osinsky A, Dabiran A. Robust detection of hydrogen using differential AlGaN/GaN high electron mobility transistor sensing diodes Ecs Transactions. 6: 289-295. DOI: 10.1063/1.2408635 |
0.386 |
|
2007 |
Jun J, Chou B, Lin J, Phipps A, Shengwen X, Ngo K, Johnson D, Kasyap A, Nishida T, Wang HT, Kang BS, Ren F, Tien LC, Sadik PW, Norton DP, ... ... Pearton SJ, et al. A hydrogen leakage detection system using self-powered wireless hydrogen sensor nodes Solid-State Electronics. 51: 1018-1022. DOI: 10.1016/J.Sse.2007.05.019 |
0.582 |
|
2007 |
Lim W, Stafford L, Wright J, Vossa L, Khanna R, Song J, Park J, Heo YW, Lee J, Kim J, Norton D, Pearton S. Comparison of plasma chemistries for the dry etching of bulk single-crystal zinc-oxide and rf-sputtered indium–zinc-oxide films Applied Surface Science. 253: 9228-9233. DOI: 10.1016/J.Apsusc.2007.05.061 |
0.669 |
|
2007 |
Tien L, Norton D, Pearton S, Wang H, Ren F. Nucleation control for ZnO nanorods grown by catalyst-driven molecular beam epitaxy Applied Surface Science. 253: 4620-4625. DOI: 10.1016/J.Apsusc.2006.10.012 |
0.331 |
|
2007 |
Lim W, Stafford L, Song J, Park J, Heo Y, Lee J, Kim J, Pearton S. Dry etching of zinc-oxide and indium-zinc-oxide in IBr and BI3 plasma chemistries Applied Surface Science. 253: 3773-3778. DOI: 10.1016/J.Apsusc.2006.07.094 |
0.663 |
|
2007 |
Wright JS, Khanna R, Voss LF, Stafford L, Gila BP, Norton DP, Pearton SJ, Wang HT, Jang S, Anderson T, Chen JJ, Kang BS, Ren F, Shen H, LaRoche JR, et al. Effect of cryogenic temperature deposition on Au contacts to bulk, single-crystal n-type ZnO Applied Surface Science. 253: 3766-3772. DOI: 10.1016/J.Apsusc.2006.07.090 |
0.803 |
|
2007 |
Herrero AM, Gerger A, Gila B, Pearton S, Wang H, Jang S, Anderson T, Chen J, Kang B, Ren F, Shen H, LaRoche JR, Smith KV. Interfacial differences in enhanced schottky barrier height Au/n-GaAs diodes deposited at 77K Applied Surface Science. 253: 3298-3302. DOI: 10.1016/J.Apsusc.2006.07.032 |
0.394 |
|
2007 |
Chang C, Pearton SJ, Huang P, Chi G, Wang H, Chen J, Ren F, Chen K, Chen L. Control of nucleation site density of GaN nanowires Applied Surface Science. 253: 3196-3200. DOI: 10.1016/J.Apsusc.2006.07.007 |
0.364 |
|
2007 |
Lim W, Sadik P, Norton D, Gila B, Pearton S, Kravchenko I, Ren F. Ir Diffusion Barriers in Ni/Au Ohmic Contacts to p-Type CuCrO2 Journal of Electronic Materials. 37: 161-166. DOI: 10.1007/S11664-007-0334-Y |
0.675 |
|
2007 |
Anderson T, Ren F, Kim J, Lin J, Hlad M, Gila B, Voss L, Pearton S, Bove P, Lahreche H, Thuret J. Microwave Performance of AlGaN/GaN High-Electron-Mobility Transistors on Si/SiO2/Poly-SiC Substrates Journal of Electronic Materials. 37: 384-387. DOI: 10.1007/S11664-007-0326-Y |
0.691 |
|
2007 |
Voss LF, Stafford L, Khanna R, Gila BP, Abernathy CR, Pearton SJ, Ren F, Kravchenko II. Thermal stability of nitride-based diffusion barriers for ohmic contacts to n-GaN Journal of Electronic Materials. 36: 1662-1668. DOI: 10.1007/S11664-007-0277-3 |
0.697 |
|
2007 |
Polyakov AY, Smirnov NB, Govorkov AV, Markov AV, Yakimov EB, Vergeles PS, Kolin NG, Merkurisov DI, Boiko VM, Lee I, Lee C, Pearton SJ. Neutron radiation effects in epitaxially laterally overgrown GaN films Journal of Electronic Materials. 36: 1320-1325. DOI: 10.1007/S11664-007-0203-8 |
0.395 |
|
2007 |
Hite JK, Frazier RM, Davies RP, Thaler GT, Abernathy CR, Pearton SJ, Zavada JM, Brown E, Hömmerich U. Effect of Si Co Doping on Ferromagnetic Properties of GaGdN Journal of Electronic Materials. 36: 391-396. DOI: 10.1007/S11664-006-0040-1 |
0.391 |
|
2007 |
Wright J, Stafford L, Gila B, Norton D, Pearton S, Wang H, Ren F. Effect of Cryogenic Temperature Deposition of Various Metal Contacts on Bulk Single-Crystal n-Type ZnO Journal of Electronic Materials. 36: 488-493. DOI: 10.1007/S11664-006-0039-7 |
0.377 |
|
2007 |
Pearton SJ, Norton DP, Ivill MP, Hebard AF, Zavada JM, Chen WM, Buyanova IA. Ferromagnetism in transition-metal doped ZnO Journal of Electronic Materials. 36: 462-471. DOI: 10.1007/S11664-006-0034-Z |
0.311 |
|
2007 |
Bang J, Kim K, Mok S, Ren F, Pearton SJ, Baik KH, Kim SH, Kim J, Shin K. Simple fabrication of nanoporous films on ZnO for enhanced light emission Physica Status Solidi (a) Applications and Materials Science. 204: 3417-3422. DOI: 10.1002/Pssa.200723127 |
0.594 |
|
2007 |
Chang T, Wu W, Lin J, Jang S, Ren F, Pearton S, Fitch R, Gillespie J. Analysis and design of AlGaN/GaN HEMT resistive mixers Microwave and Optical Technology Letters. 49: 1152-1154. DOI: 10.1002/Mop.22390 |
0.327 |
|
2006 |
Pearton SJ, Norton DP, Heo YW, Tien LC, Ivill MP, Li Y, Kang BS, Ren F, Kelly J, Hebard AF. ZnO spintronics and nanowire devices Journal of Electronic Materials. 35: 862-868. DOI: 10.1557/Proc-829-B8.5 |
0.451 |
|
2006 |
Pearton SJ, Tien LC, Kim HS, Norton DP, Chen JJ, Wang HT, Kang BS, Ren F, Lim WT, Wright J, Khanna R, Voss LF, Stafford L, Jun J, Lin J. Development of Thin Film and Nanorod ZnO-Based LEDs and Sensors Mrs Proceedings. 957. DOI: 10.1557/Proc-0957-K01-05 |
0.763 |
|
2006 |
Anderson T, Ren F, Voss L, Hlad M, Gila BP, Pearton S, Covert L, Lin J, Thuret J, Lahreche H, Bove P. AlGaN/GaN High Electron Mobility Transistors on Si/SiO2/poly-SiC Substrates Mrs Proceedings. 955. DOI: 10.1557/Proc-0955-I16-02 |
0.698 |
|
2006 |
Hite J, Thaler GT, Park JH, Steckl AJ, Abernathy CR, Zavada JM, Pearton S. Magnetic and Optical Properties of Eu-doped GaN Mrs Proceedings. 955. DOI: 10.1557/Proc-0955-I15-01 |
0.37 |
|
2006 |
Zavada JM, Nepal N, Lin J, Kim KH, Jiang HX, Hite J, Thaler GT, Frazier RM, Abernathy CR, Pearton SJ. Photoluminescence from Gd-implanted AlN and GaN epilayers Materials Research Society Symposium Proceedings. 955: 400-403. DOI: 10.1557/Proc-0955-I10-02 |
0.358 |
|
2006 |
Hite JK, Davies RP, Frazier RM, Thaler GT, Abernathy CR, Pearton SJ, Zavada JM. Properties of Ferromagnetic GaGdN Mrs Proceedings. 955. DOI: 10.1557/Proc-0955-I01-04 |
0.361 |
|
2006 |
Stodilka D, Gerger AP, Hlad M, Kumar P, Gila BP, Singh R, Abernathy CR, Pearton SJ, Ren F. Alternative Magnesium Calcium Oxide Gate Dielectric for Silicon Carbide MOS Application Mrs Proceedings. 911. DOI: 10.1557/Proc-0911-B14-03 |
0.397 |
|
2006 |
Anderson TJ, Ren F, Covert L, Lin J, Pearton SJ. Thermal Considerations in Design of Vertically Integrated Si∕GaN∕SiC Multichip Modules Journal of the Electrochemical Society. 153: G906. DOI: 10.1149/1.2234734 |
0.333 |
|
2006 |
Wang H, Kang BS, Ren F, Herrero A, Gerger AM, Gila BP, Pearton SJ, Shen H, LaRoche JR, Smith KV. Thermal Stability of Au Schottky Diodes on GaAs Deposited at Either 77 or 300 K Journal of the Electrochemical Society. 153: G787. DOI: 10.1149/1.2212049 |
0.434 |
|
2006 |
Voss L, Pearton SJ, Ren F, Bove P, Lahreche H, Thuret J. Electrical Performance of GaN Schottky Rectifiers on Si Substrates Journal of the Electrochemical Society. 153: G681. DOI: 10.1149/1.2202146 |
0.692 |
|
2006 |
Chen JJ, Anderson TJ, Jang S, Ren F, Li YJ, Kim H, Gila BP, Norton DP, Pearton SJ. Ti∕Au Ohmic Contacts to Al-Doped n-ZnO Grown by Pulsed Laser Deposition Journal of the Electrochemical Society. 153: G462. DOI: 10.1149/1.2184047 |
0.437 |
|
2006 |
Chang C, Lan T, Chi G, Chen L, Chen K, Chen J, Jang S, Ren F, Pearton SJ. Effect of Ozone Cleaning and Annealing on Ti ∕ Al ∕ Pt ∕ Au Ohmic Contacts on GaN Nanowires Electrochemical and Solid State Letters. 9. DOI: 10.1149/1.2179187 |
0.401 |
|
2006 |
Li Y, Kim H, Erie J, Ren F, Pearton SJ, Norton DP. Effect of argon annealing of phosphorus-doped ZnO and (Zn,Mg)O thin films grown pulsed laser deposition Proceedings of Spie. 6337: 633708. DOI: 10.1117/12.694798 |
0.365 |
|
2006 |
Park J, Song J, Heo Y, Lee J, Kim J, Lim WT, Stafford L, Norton DP, Pearton SJ. Effects of Zn content on structural and transparent conducting properties of indium-zinc oxide films grown by rf magnetron sputtering Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 24: 2737. DOI: 10.1116/1.2393246 |
0.663 |
|
2006 |
Anderson TJ, Ren F, Voss L, Hlad M, Gila BP, Covert L, Lin J, Pearton SJ, Bove P, Lahreche H, Thuret J. AlGaN∕GaN high electron mobility transistors on Si∕SiO[sub 2]/poly-SiC substrates Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 24: 2302. DOI: 10.1116/1.2348730 |
0.694 |
|
2006 |
Polyakov AY, Smirnov NB, Govorkov AV, Markov AV, Kolin NG, Merkurisov DI, Boiko VM, Shcherbatchev KD, Bublik VT, Voronova MI, Pearton SJ, Dabiran A, Osinsky AV. Neutron irradiation effects in p-GaN Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 24: 2256. DOI: 10.1116/1.2338045 |
0.354 |
|
2006 |
Anderson T, Ren F, Pearton SJ, Mastro MA, Holm RT, Henry RL, Eddy CR, Lee JY, Lee KY, Kim J. Laser ablation of via holes in GaN and AlGaN/GaN high electron mobility transistor structures Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 24: 2246-2249. DOI: 10.1116/1.2335435 |
0.303 |
|
2006 |
Wang H, Jang S, Anderson T, Chen JJ, Kang BS, Ren F, Herrero A, Gerger AM, Gila BP, Pearton SJ, Shen H, LaRoche JR, Smith KV. Improved Au Schottky contacts on GaAs using cryogenic metal deposition Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 24: 1799. DOI: 10.1116/1.2213270 |
0.429 |
|
2006 |
Polyakov AY, Smirnov NB, Govorkov AV, Markov AV, Kolin NG, Boiko VM, Merkurisov DI, Pearton SJ. Neutron irradiation effects in undoped n-AlGaN Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 24: 1094. DOI: 10.1116/1.2188407 |
0.338 |
|
2006 |
Govorkov AV, Smirnov NB, Polyakov AY, Markov AV, Voss L, Pearton SJ. Microcathodoluminescence and electrical properties of GaN epitaxial layers grown on thick freestanding GaN substrates Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 24: 790. DOI: 10.1116/1.2184322 |
0.703 |
|
2006 |
Jang S, Chen JJ, Ren F, Yang H, Han S, Norton DP, Pearton SJ. Simulation of vertical and lateral ZnO light-emitting diodes Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 24: 690. DOI: 10.1116/1.2180255 |
0.355 |
|
2006 |
Anderson TJ, Ren F, Covert L, Lin J, Pearton SJ. Thermal simulations of three-dimensional integrated multichip module with GaN power amplifier and Si modulator Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 24: 284. DOI: 10.1116/1.2163888 |
0.332 |
|
2006 |
Polyakov AY, Smirnov NB, Govorkov AV, Markov AV, Kolin NG, Merkurisov DI, Boiko VM, Shcherbatchev KD, Bublik VT, Voronova MI, Lee I, Lee CR, Pearton SJ, Dabirian A, Osinsky AV. Fermi level pinning in heavily neutron-irradiated GaN Journal of Applied Physics. 100: 093715. DOI: 10.1063/1.2361157 |
0.371 |
|
2006 |
Hite J, Thaler GT, Khanna R, Abernathy CR, Pearton SJ, Park JH, Steckl AJ, Zavada JM. Optical and magnetic properties of Eu-doped GaN Applied Physics Letters. 89: 132119. DOI: 10.1063/1.2358293 |
0.362 |
|
2006 |
Stafford L, Voss LF, Pearton SJ, Chen JJ, Ren F. Schottky barrier height of boride-based rectifying contacts to p-GaN Applied Physics Letters. 89. DOI: 10.1063/1.2357855 |
0.687 |
|
2006 |
Zavada JM, Nepal N, Lin JY, Jiang HX, Brown E, Hömmerich U, Hite J, Thaler GT, Abernathy CR, Pearton SJ, Gwilliam R. Ultraviolet photoluminescence from Gd-implanted AlN epilayers Applied Physics Letters. 89. DOI: 10.1063/1.2357552 |
0.329 |
|
2006 |
Wang HT, Jang S, Anderson T, Chen JJ, Kang BS, Ren F, Voss LF, Stafford L, Khanna R, Gila BP, Pearton SJ, Shen H, LaRoche JR, Smith KV. Increased Schottky barrier heights for Au on n- And p-type GaN using cryogenic metal deposition Applied Physics Letters. 89. DOI: 10.1063/1.2356698 |
0.716 |
|
2006 |
Polyakov AY, Smirnov NB, Govorkov AV, Dabiran AM, Osinsky AV, Pearton SJ. Electrical and optical properties of doped p-type GaN superlattices Applied Physics Letters. 89: 112127. DOI: 10.1063/1.2354443 |
0.388 |
|
2006 |
Hite JK, Frazier RM, Davies R, Thaler GT, Abernathy CR, Pearton SJ, Zavada JM. Effect of growth conditions on the magnetic characteristics of GaGdN Applied Physics Letters. 89: 092119. DOI: 10.1063/1.2337082 |
0.353 |
|
2006 |
Lopatiuk-Tirpak O, Schoenfeld WV, Chernyak L, Xiu FX, Liu JL, Jang S, Ren F, Pearton SJ, Osinsky A, Chow P. Carrier concentration dependence of acceptor activation energy in p-type ZnO Applied Physics Letters. 88. DOI: 10.1063/1.2206700 |
0.324 |
|
2006 |
Irokawa Y, Ishiguro O, Kachi T, Pearton SJ, Ren F. Implantation temperature dependence of Si activation in AlGaN Applied Physics Letters. 88: 182106. DOI: 10.1063/1.2200283 |
0.391 |
|
2006 |
Kang BS, Chen JJ, Ren F, Li Y, Kim H, Norton DP, Pearton SJ. ITO∕Ti∕Au Ohmic contacts on n-type ZnO Applied Physics Letters. 88: 182101. DOI: 10.1063/1.2198513 |
0.396 |
|
2006 |
Chang CY, Tsao FC, Pan CJ, Chi GC, Wang HT, Chen JJ, Ren F, Norton DP, Pearton SJ, Chen KH, Chen LC. Electroluminescence from ZnO nanowire/polymer composite p-n junction Applied Physics Letters. 88. DOI: 10.1063/1.2198480 |
0.359 |
|
2006 |
Chen J, Jang S, Anderson TJ, Ren F, Li Y, Kim H, Gila BP, Norton DP, Pearton SJ. Low specific contact resistance Ti∕Au contacts on ZnO Applied Physics Letters. 88: 122107. DOI: 10.1063/1.2187576 |
0.426 |
|
2006 |
Wang H, Kang BS, Chen J, Anderson T, Jang S, Ren F, Kim HS, Li YJ, Norton DP, Pearton SJ. Band-edge electroluminescence from N+-implanted bulk ZnO Applied Physics Letters. 88: 102107. DOI: 10.1063/1.2186508 |
0.389 |
|
2006 |
Han SY, Hite J, Thaler GT, Frazier RM, Abernathy CR, Pearton SJ, Choi HK, Lee WO, Park YD, Zavada JM, Gwilliam R. Effect of Gd implantation on the structural and magnetic properties of GaN and AlN Applied Physics Letters. 88: 042102. DOI: 10.1063/1.2167790 |
0.361 |
|
2006 |
Chen J, Jang S, Ren F, Rawal S, Li Y, Kim H, Norton DP, Pearton SJ, Osinsky A. Comparison of Ti∕Al∕Pt∕Au and Ti∕Au Ohmic contacts on n-type ZnCdO Applied Physics Letters. 88: 012109. DOI: 10.1063/1.2161927 |
0.404 |
|
2006 |
Voss L, Khanna R, Pearton SJ, Ren F, Kravchenko I. Improved thermally stable ohmic contacts on p-GaN based on W2B Applied Physics Letters. 88: 12104. DOI: 10.1063/1.2161806 |
0.71 |
|
2006 |
Norton DP, Ivill M, Li Y, Kwon YW, Erie JM, Kim HS, Ip K, Pearton SJ, Heo YW, Kim S, Kang BS, Ren F, Hebard AF, Kelly J. Charge carrier and spin doping in ZnO thin films Thin Solid Films. 496: 160-168. DOI: 10.1016/J.Tsf.2005.08.246 |
0.697 |
|
2006 |
Kim J, Freitas JA, Mittereder J, Fitch R, Kang BS, Pearton SJ, Ren F. Effective temperature measurements of AlGaN/GaN-based HEMT under various load lines using micro-raman technique Solid-State Electronics. 50: 408-411. DOI: 10.1016/J.Sse.2005.11.009 |
0.32 |
|
2006 |
Polyakov AY, Smirnov NB, Govorkov AV, Markov AV, Pearton SJ, Kolin NG, Merkurisov DI, Boiko VM, Skowronski M, Lee I-. Neutron irradiation effects in AlGaN/GaN heterojunctions Physica B-Condensed Matter. 376: 523-526. DOI: 10.1016/J.Physb.2005.12.133 |
0.372 |
|
2006 |
Ip K, Thaler G, Yang H, Youn Han S, Li Y, Norton D, Pearton S, Jang S, Ren F. Contacts to ZnO Journal of Crystal Growth. 287: 149-156. DOI: 10.1016/J.Jcrysgro.2005.10.059 |
0.726 |
|
2006 |
Lim W, Stafford L, Song J, Park J, Heo Y, Lee J, Kim J, Pearton S. High-density plasma etching of indium–zinc oxide films in Ar/Cl2 and Ar/CH4/H2 chemistries Applied Surface Science. 253: 2752-2757. DOI: 10.1016/J.Apsusc.2006.05.052 |
0.671 |
|
2006 |
Khanna R, Pearton SJ, Ren F, Kravchenko II. Stability of Ti/Al/ZrB 2 /Ti/Au ohmic contacts on n-GaN Applied Surface Science. 253: 2340-2344. DOI: 10.1016/J.Apsusc.2006.04.042 |
0.408 |
|
2006 |
Khanna R, Ramani K, Cracium V, Singh R, Pearton SJ, Ren F, Kravchenko II. ZrB 2 Schottky diode contacts on n-GaN Applied Surface Science. 253: 2315-2319. DOI: 10.1016/J.Apsusc.2006.04.041 |
0.439 |
|
2006 |
Lim W, Voss L, Khanna R, Gila B, Norton D, Pearton S, Ren F. Comparison of CH4/H2 and C2H6/H2 inductively coupled plasma etching of ZnO Applied Surface Science. 253: 1269-1273. DOI: 10.1016/J.Apsusc.2006.01.081 |
0.74 |
|
2006 |
Lim W, Voss L, Khanna R, Gila B, Norton D, Pearton S, Ren F. Dry etching of bulk single-crystal ZnO in CH 4 /H 2 -based plasma chemistries Applied Surface Science. 253: 889-894. DOI: 10.1016/J.Apsusc.2006.01.037 |
0.771 |
|
2006 |
Chen J, Jang S, Ren F, Rawal S, Li Y, Kim H, Norton D, Pearton S, Osinsky A. Thermal stability of Ti/Al/Pt/Au and Ti/Au Ohmic contacts on n-type ZnCdO Applied Surface Science. 253: 746-752. DOI: 10.1016/J.Apsusc.2006.01.012 |
0.381 |
|
2006 |
Hlad M, Voss L, Gila B, Abernathy C, Pearton S, Ren F. Dry etching of MgCaO gate dielectric and passivation layers on GaN Applied Surface Science. 252: 8010-8014. DOI: 10.1016/J.Apsusc.2005.10.018 |
0.696 |
|
2006 |
Heo Y, Ip K, Pearton S, Norton D, Budai J. Growth of ZnO thin films on c-plane Al2O3 by molecular beam epitaxy using ozone as an oxygen source Applied Surface Science. 252: 7442-7448. DOI: 10.1016/J.Apsusc.2005.08.094 |
0.681 |
|
2006 |
Chang C, Chi G, Wang W, Chen L, Chen K, Ren F, Pearton SJ. Electrical transport properties of single GaN and InN nanowires Journal of Electronic Materials. 35: 738-743. DOI: 10.1007/S11664-006-0131-Z |
0.431 |
|
2006 |
Jang S, Ren F, Pearton SJ, Gila BP, Hlad M, Abernathy CR, Yang H, Pan CJ, Chyi J, Bove P, Lahreche H, Thuret J. Si-diffused GaN for enhancement-mode GaN mosfet on si applications Journal of Electronic Materials. 35: 685-690. DOI: 10.1007/S11664-006-0121-1 |
0.376 |
|
2006 |
Hlad M, Voss L, Gila BP, Abernathy CR, Pearton SJ, Ren F. Selective dry etching of (Sc2O3)x(Ga2O3)1−x gate dielectrics and surface passivation films on GaN Journal of Electronic Materials. 35: 680-684. DOI: 10.1007/S11664-006-0120-2 |
0.703 |
|
2006 |
Polyakov AY, Smirnov NB, Govorkov AV, Kozhukhova EA, Pearton SJ, Norton DP, Osinsky A, Dabiran A. Electrical properties of undoped bulk ZnO substrates Journal of Electronic Materials. 35: 663-669. DOI: 10.1007/S11664-006-0117-X |
0.393 |
|
2006 |
Li YJ, Heo YW, Erie JM, Kim H, Ip K, Pearton SJ, Norton DP. Synthesis and characterization of phosphorus-doped ZnO and (Zn,Mg)O thin films via pulsed laser deposition Journal of Electronic Materials. 35: 530-537. DOI: 10.1007/S11664-006-0095-Z |
0.709 |
|
2006 |
Chen J, Jang S, Ren F, Li Y, Kim H, Norton DP, Pearton SJ, Osinsky A, Chu SNG, Weaver JF. Selective and nonselective wet etching of Zn0.9Mg0.1O/ZnO Journal of Electronic Materials. 35: 516-519. DOI: 10.1007/S11664-006-0092-2 |
0.332 |
|
2006 |
Chen J, Hlad M, Gerger A, Gila B, Ren F, Abernathy C, Pearton S. Band Offsets in the Mg0.5Ca0.5O/GaN Heterostructure System Journal of Electronic Materials. 36: 368-372. DOI: 10.1007/S11664-006-0037-9 |
0.346 |
|
2006 |
Lee I, Polyakov AY, Smirnov NB, Govorkov AV, Markov AV, Pearton SJ. Electrical and recombination properties and deep traps spectra in MOCVD ELOG GaN layers Physica Status Solidi (C). 3: 2087-2090. DOI: 10.1002/Pssc.200565195 |
0.368 |
|
2006 |
Choi H, Lee CW, Lee GS, Oh MK, Ahn DJ, Kim J, Kim J, Ren F, Pearton SJ. Immobilization of heterogeneous polydiacetylene supramolecules on SiC substrate for cyclodextrin sensors Physica Status Solidi (a). 203: R79-R81. DOI: 10.1002/Pssa.200622290 |
0.31 |
|
2006 |
Kim J, Baik K, Park C, Cho S, Pearton SJ, Ren F. Measurement of external stress on bulk GaN Physica Status Solidi (a). 203: 2393-2396. DOI: 10.1002/Pssa.200622165 |
0.574 |
|
2005 |
Sippel-Oakley J, Wang HT, Kang BS, Wu Z, Ren F, Rinzler AG, Pearton SJ. Carbon nanotube films for room temperature hydrogen sensing. Nanotechnology. 16: 2218-21. PMID 20817998 DOI: 10.1088/0957-4484/16/10/040 |
0.322 |
|
2005 |
Khanna R, Pearton SJ, Kao CJ, Kravchenko II, Ren F, Chi GC, Dabiran A, Osinsky A. W2B based High Thermal Stability Ohmic Contacts to n-GaN Mrs Proceedings. 892. DOI: 10.1557/Proc-0892-Ff14-04 |
0.414 |
|
2005 |
Xie JQ, Dong JW, Osinsky A, Chow PP, Heo YW, Norton DP, Pearton SJ, Dong XY, Adelmann C, Palmstrøm CJ. Growth of a-plane ZnO Thin Films on r-plane Sapphire by Plasma-assisted MBE Mrs Proceedings. 891. DOI: 10.1557/Proc-0891-Ee10-01 |
0.326 |
|
2005 |
Kim J, Freitas JA, Klein PB, Jang S, Ren F, Pearton SJ. The Effect of Thermally Induced Stress on Device Temperature Measurements by Raman Spectroscopy Electrochemical and Solid State Letters. 8. DOI: 10.1149/1.2103527 |
0.303 |
|
2005 |
Tien LC, Wang HT, Kang BS, Ren F, Sadik PW, Norton DP, Pearton SJ, Lin J. Room-Temperature Hydrogen-Selective Sensing Using Single Pt-Coated ZnO Nanowires at Microwatt Power Levels Electrochemical and Solid-State Letters. 8: G230. DOI: 10.1149/1.1979450 |
0.318 |
|
2005 |
Irokawa Y, Fujishima O, Kachi T, Pearton SJ, Ren F. Si + Ion Implantation into GaN at Cryogenic Temperatures Electrochemical and Solid State Letters. 8. DOI: 10.1149/1.1869093 |
0.334 |
|
2005 |
Thaler G, Frazier R, Gila B, Stapleton J, Davies R, Abernathy CR, Pearton SJ. Effect of oxygen co-doping on the electronic and magnetic properties of Ga(1-x)MnxN Electrochemical and Solid-State Letters. 8: G20-G22. DOI: 10.1149/1.1830394 |
0.375 |
|
2005 |
Yang HS, Han SY, Heo YW, Baik KH, Norton DP, Pearton SJ, Ren F, Osinsky A, Dong JW, Hertog B, Dabiran AM, Chow PP, Chernyak L, Steiner T, Kao CJ, et al. Fabrication of hybrid n-ZnMgO/n-ZnO/p-AlGaN/p-GaN light-emitting diodes Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 44: 7296-7300. DOI: 10.1143/Jjap.44.7296 |
0.625 |
|
2005 |
Han SY, Yang HS, Baik KH, Pearton SJ, Ren F. Role of Ion Energy and Flux on Inductively Coupled Plasma Etch Damage in InGaN/GaN Multi Quantum Well Light Emitting Diodes Japanese Journal of Applied Physics. 44: 7234-7237. DOI: 10.1143/Jjap.44.7234 |
0.612 |
|
2005 |
Yang HS, Li Y, Norton DP, Pearton SJ, Jang S, Ren F, Boatner LA. Fabrication of p-n junctions in as-grown ZnMgO/ZnO films Proceedings of Spie. 5941. DOI: 10.1117/12.616668 |
0.415 |
|
2005 |
Li YJ, Heo YW, Erie JM, Kim HS, Ip K, Pearton SJ, Norton DP. Properties of phosphorus-doped ZnO and (Zn,Mg)O thin films via pulsed laser deposition Proceedings of Spie. 5941: 366. DOI: 10.1117/12.615015 |
0.712 |
|
2005 |
Han SY, Yang H, Norton DP, Pearton SJ, Ren F, Osinsky A, Dong JW, Hertog B, Chow PP. Design and simulation of ZnO-based light-emitting diode structures Journal of Vacuum Science & Technology B. 23: 2504-2509. DOI: 10.1116/1.2131869 |
0.345 |
|
2005 |
Voss L, Gila BP, Pearton SJ, Wang H, Ren F. Characterization of bulk GaN rectifiers for hydrogen gas sensing Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 23: 2373. DOI: 10.1116/1.2110343 |
0.683 |
|
2005 |
Kryliouk O, Park HJ, Wang HT, Kang BS, Anderson TJ, Ren F, Pearton SJ. Pt-coated InN nanorods for selective detection of hydrogen at room temperature Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 23: 1891. DOI: 10.1116/1.2008268 |
0.354 |
|
2005 |
Kao CJ, Kwon YW, Heo YW, Norton DP, Pearton SJ, Ren F, Chi GC. Comparison of ZnO metal-oxide-semiconductor field effect transistor and metal-semiconductor field effect transistor structures grown on sapphire by pulsed laser deposition Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 23: 1024-1028. DOI: 10.1116/1.1924613 |
0.4 |
|
2005 |
Polyakov AY, Smirnov NB, Govorkov AV, Kozhukhova EA, Heo YW, Ivill MP, Ip K, Norton DP, Pearton SJ, Kelly J, Rairigh R, Hebard AF, Steiner T. Properties of Mn- and Co-doped bulk ZnO crystals Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 23: 274-279. DOI: 10.1116/1.1856476 |
0.335 |
|
2005 |
Kang BS, Ren F, Jeong BS, Kwon YW, Baik KH, Norton DP, Pearton SJ. Use of 370 nm UV light for selective-area fibroblast cell growth Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 23: 57. DOI: 10.1116/1.1835314 |
0.565 |
|
2005 |
Polyakov AY, Smirnov NB, Govorkov AV, Thaler GT, Frazier RM, Abernathy CR, Pearton SJ. Electrical and optical properties of GaCrN films grown by molecular beam epitaxy Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 23: 1. DOI: 10.1116/1.1829059 |
0.341 |
|
2005 |
Kang BS, Kim S, Ren F, Gila BP, Abernathy CR, Pearton SJ. AlGaN/GaN-based diodes and gateless HEMTs for gas and chemical sensing Ieee Sensors Journal. 5: 677-680. DOI: 10.1109/Jsen.2005.848136 |
0.37 |
|
2005 |
Shi GA, Stavola M, Pearton SJ, Thieme M, Lavrov EV, Weber J. Hydrogen local modes and shallow donors in ZnO Physical Review B - Condensed Matter and Materials Physics. 72. DOI: 10.1103/Physrevb.72.195211 |
0.318 |
|
2005 |
Kim DH, Yang JS, Kim YS, Noh TW, Bu SD, Baik S, Kim Y, Park YD, Pearton SJ, Kim J, Park J, Lin H, Chen CT, Song YJ. Effects of high-temperature postannealing on magnetic properties of Co-doped anataseTiO2thin films Physical Review B. 71. DOI: 10.1103/Physrevb.71.014440 |
0.35 |
|
2005 |
Polyakov A, Smirnov N, Govorkov A, Khanna R, Pearton S. Electrical and optical properties of p-GaN films implanted with transition metal impurities Physica Status Solidi (C). 2: 2520-2524. DOI: 10.1088/0953-8984/16/17/023 |
0.372 |
|
2005 |
Tien LC, Sadik PW, Norton DP, Voss LF, Pearton SJ, Wang HT, Kang BS, Ren F, Jun J, Lin J. Hydrogen sensing at room temperature with Pt-coated ZnO thin films and nanorods Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2136070 |
0.666 |
|
2005 |
Yang HS, Norton DP, Pearton SJ, Ren F. Ti∕Au n-type Ohmic contacts to bulk ZnO substrates Applied Physics Letters. 87: 212106. DOI: 10.1063/1.2135381 |
0.428 |
|
2005 |
Khanna R, Han SY, Pearton SJ, Schoenfeld D, Schoenfeld WV, Ren F. High dose Co-60 gamma irradiation of InGaN quantum well light-emitting diodes Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2132085 |
0.321 |
|
2005 |
Wang HT, Kang BS, Ren F, Fitch RC, Gillespie JK, Moser N, Jessen G, Jenkins T, Dettmer R, Via D, Crespo A, Gila BP, Abernathy CR, Pearton SJ. Comparison of gate and drain current detection of hydrogen at room temperature with AlGaN/GaN high electron mobility transistors Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2117617 |
0.37 |
|
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