| Year |
Citation |
Score |
| 2016 |
Goodfellow KM, Chakraborty C, Sowers K, Waduge P, Wanunu M, Krauss T, Driscoll K, Vamivakas N. Study of energy transfer between quantum dots and a two-dimensional semiconductor Frontiers in Optics. DOI: 10.1364/Fio.2016.Jw4A.136 |
0.546 |
|
| 2016 |
Goodfellow KM, Chakraborty C, Sowers K, Waduge P, Wanunu M, Krauss T, Driscoll K, Vamivakas AN. Distance-dependent energy transfer between CdSe/CdS quantum dots and a two-dimensional semiconductor Applied Physics Letters. 108. DOI: 10.1063/1.4939845 |
0.555 |
|
| 2014 |
Dai Y, Polly S, Hellström S, Driscoll K, Forbes DV, Hubbard SM, Roland PJ, Ellingson RJ. Effects of electric field on thermal and tunneling carrier escape in InAs/GaAs quantum dot solar cells Proceedings of Spie - the International Society For Optical Engineering. 8981. DOI: 10.1117/12.2040153 |
0.562 |
|
| 2014 |
Polly SJ, Forbes DV, Driscoll K, Hellstrom S, Hubbard SM. Delta-doping effects on quantum-dot solar cells Ieee Journal of Photovoltaics. 4: 1079-1085. DOI: 10.1109/Jphotov.2014.2316677 |
0.584 |
|
| 2014 |
Driscoll K, Bennett MF, Polly SJ, Forbes DV, Hubbard SM. Effect of quantum dot position and background doping on the performance of quantum dot enhanced GaAs solar cells Applied Physics Letters. 104. DOI: 10.1063/1.4862028 |
0.6 |
|
| 2013 |
Driscoll K, Bennett M, Polly S, Forbes DV, Hubbard SM. Investigation of the design parameters of quantum dot enhanced III-V solar cells Proceedings of Spie - the International Society For Optical Engineering. 8620. DOI: 10.1117/12.2005457 |
0.514 |
|
| 2012 |
Sudradjat FF, Zhang W, Driscoll K, Liao Y, Bhattacharyya A, Thomidis C, Zhou L, Smith DJ, Moustakas TD, Paiella R. Sequential tunneling transport in GaN/AlGaN quantum cascade structures Physica Status Solidi (C). 9: 588-591. DOI: 10.1002/Pssc.201100423 |
0.762 |
|
| 2010 |
Paiella R, Driscoll K, Li Y, Liao Y, Bhattacharyya A, Thomidis C, Zhou L, Smith DJ, Moustakas TD. Intersubband transitions in GaN-based quantum wells: a new materials platform for infrared device applications Proceedings of Spie. 7808: 780807. DOI: 10.1117/12.861479 |
0.768 |
|
| 2010 |
Sudradjat F, Zhang W, Driscoll K, Liao Y, Bhattacharyya A, Thomidis C, Zhou L, Smith DJ, Moustakas TD, Paiella R. Sequential tunneling transport characteristics of GaN/AlGaN coupled-quantum-well structures Journal of Applied Physics. 108: 103704. DOI: 10.1063/1.3511334 |
0.768 |
|
| 2010 |
Driscoll K, Liao Y, Bhattacharyya A, Moustakas TD, Paiella R, Zhou L, Smith DJ. Optical and structural characterization of GaN/AlGaN quantum wells for intersubband device applications Physica Status Solidi (C). 7: 2394-2397. DOI: 10.1002/Pssc.200983905 |
0.734 |
|
| 2009 |
Paiella R, Driscoll K, Liao Y, Bhattacharyya A, Zhou L, Smith DJ, Moustakas TD. Short-Wavelength Intersubband Light Emission from Optically Pumped GaN/AlN Quantum Wells Mrs Proceedings. 1202. DOI: 10.1557/Proc-1202-I10-08 |
0.736 |
|
| 2009 |
Sudradjat F, Driscoll K, Liao Y, Bhattacharyya A, Thomidis C, Zhou L, Smith DJ, Moustakas TD, Paiella R. Experimental Observation of Sequential Tunneling Transport in GaN/AlGaN Coupled Quantum Wells Grown on a Free-Standing GaN Substrate Mrs Proceedings. 1202. DOI: 10.1557/Proc-1202-I09-20 |
0.768 |
|
| 2009 |
Bellotti E, Driscoll K, Moustakas TD, Paiella R. Monte Carlo simulation of terahertz quantum cascade laser structures based on wide-bandgap semiconductors Journal of Applied Physics. 105: 113103. DOI: 10.1063/1.3137203 |
0.766 |
|
| 2009 |
Driscoll K, Liao Y, Bhattacharyya A, Zhou L, Smith DJ, Moustakas TD, Paiella R. Optically pumped intersubband emission of short-wave infrared radiation with GaN/AlN quantum wells Applied Physics Letters. 94: 081120. DOI: 10.1063/1.3089840 |
0.729 |
|
| 2008 |
Bellotti E, Driscoll K, Moustakas TD, Paiella R. Monte Carlo study of GaN versus GaAs terahertz quantum cascade structures Applied Physics Letters. 92: 101112. DOI: 10.1063/1.2894508 |
0.762 |
|
| 2007 |
Driscoll K, Paiella R. Design of n-type silicon-based quantum cascade lasers for terahertz light emission Journal of Applied Physics. 102: 093103. DOI: 10.1063/1.2803896 |
0.727 |
|
| 2007 |
Driscoll K, Bhattacharyya A, Moustakas TD, Paiella R, Zhou L, Smith DJ. Intersubband absorption in AlN∕GaN∕AlGaN coupled quantum wells Applied Physics Letters. 91: 141104. DOI: 10.1063/1.2794013 |
0.748 |
|
| 2006 |
Driscoll K, Paiella R. Silicon-based injection lasers using electronic intersubband transitions in the L valleys Applied Physics Letters. 89: 191110. DOI: 10.1063/1.2385861 |
0.71 |
|
| 2005 |
Friel I, Driscoll K, Kulenica E, Dutta M, Paiella R, Moustakas TD. Investigation of the design parameters of AlN/GaN multiple quantum wells grown by molecular beam epitaxy for intersubband absorption Journal of Crystal Growth. 278: 387-392. DOI: 10.1016/J.Jcrysgro.2005.01.042 |
0.739 |
|
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