| Year |
Citation |
Score |
| 2023 |
Cheng HT, Wu CH, Feng M, Wu CH. 40.1-GHz sub-freezing 850-nm VCSEL: microwave extraction of cavity lifetimes and small-signal equivalent circuit modeling. Optics Express. 31: 11408-11422. PMID 37155776 DOI: 10.1364/OE.486480 |
0.652 |
|
| 2022 |
Cheng HT, Qiu J, Peng CY, Kuo HC, Feng M, Wu CH. 29 GHz single-mode vertical-cavity surface-emitting lasers passivated by atomic layer deposition. Optics Express. 30: 47553-47566. PMID 36558682 DOI: 10.1364/OE.474930 |
0.654 |
|
| 2020 |
Peng CY, Tsao K, Cheng HT, Feng M, Wu CH. Investigation of the current influence on near-field and far-field beam patterns for an oxide-confined vertical-cavity surface-emitting laser. Optics Express. 28: 30748-30759. PMID 33115069 DOI: 10.1364/OE.397878 |
0.627 |
|
| 2020 |
Huang C, Tsai C, Weng J, Cheng C, Wang H, Wu C, Feng M, Lin G. Temperature and Noise Dependence of Tri-Mode VCSEL Carried 120-Gbit/s QAM-OFDM Data in Back-to-Back and OM5-MMF Links Journal of Lightwave Technology. 1-1. DOI: 10.1109/Jlt.2020.3017798 |
0.609 |
|
| 2019 |
Winoto A, Qiu J, Wu D, Feng M. Transistor Laser-Integrated Photonics for Optical Logic: Unlocking Unique Electro-Optical Integration Potential to Open Up New Possibilities for Logic Processors Ieee Nanotechnology Magazine. 13: 27-34. DOI: 10.1109/Mnano.2019.2891978 |
0.398 |
|
| 2018 |
Feng M, Wu C, Holonyak N. Oxide-Confined VCSELs for High-Speed Optical Interconnects Ieee Journal of Quantum Electronics. 54: 1-15. DOI: 10.1109/Jqe.2018.2817068 |
0.675 |
|
| 2018 |
Feng M, Qiu J, Holonyak N. Tunneling Modulation of Transistor Lasers: Theory and Experiment Ieee Journal of Quantum Electronics. 54: 1-14. DOI: 10.1109/Jqe.2018.2809471 |
0.404 |
|
| 2018 |
Qiu J, Wang CY, Feng M, Holonyak N. Direct and photon-assisted tunneling in resonant-cavity quantum-well light-emitting transistors Journal of Applied Physics. 124: 234501. DOI: 10.1063/1.5042418 |
0.379 |
|
| 2017 |
Yin Y, Lan W, Lin T, Wang C, Feng M, Huang J. High-Speed Visible Light Communication Using GaN-Based Light-emitting Diodes With Photonic Crystals Journal of Lightwave Technology. 35: 258-264. DOI: 10.1109/Jlt.2016.2634005 |
0.644 |
|
| 2017 |
Feng M, Wu CH, Wu MK, Wu CH, Holonyak N. Resonance-free optical response of a vertical cavity transistor laser Applied Physics Letters. 111: 121106. DOI: 10.1063/1.5004133 |
0.419 |
|
| 2017 |
Feng M, Holonyak N, Wang CY. Room temperature operation of electro-optical bistability in the edge-emitting tunneling-collector transistor laser Journal of Applied Physics. 122: 103102. DOI: 10.1063/1.4989521 |
0.385 |
|
| 2017 |
Feng M, Holonyak N, Wu MK, Tan F. Electro-optical hysteresis and bistability in the ring-cavity tunneling-collector transistor laser Journal of Applied Physics. 121: 153103. DOI: 10.1063/1.4981881 |
0.379 |
|
| 2016 |
Liu H, Sun P, He Q, Feng M, Liu H, Yang S, Wang L, Wang Z. Ozonation of the UV filter benzophenone-4 in aquatic environments: Intermediates and pathways. Chemosphere. 149: 76-83. PMID 26855209 DOI: 10.1016/j.chemosphere.2016.01.097 |
0.493 |
|
| 2016 |
Wang CY, Liu M, Feng M, Holonyak N. Microwave extraction method of radiative recombination and photon lifetimes up to 85 °C on 50 Gb/s oxide-vertical cavity surface emitting laser Journal of Applied Physics. 120: 223103. DOI: 10.1063/1.4971978 |
0.371 |
|
| 2016 |
Feng M, Qiu J, Wang CY, Holonyak N. Tunneling modulation of a quantum-well transistor laser Journal of Applied Physics. 120: 204501. DOI: 10.1063/1.4967922 |
0.402 |
|
| 2016 |
Feng M, Qiu J, Wang CY, Holonyak N. Intra-cavity photon-assisted tunneling collector-base voltage-mediated electron-hole spontaneous-stimulated recombination transistor laser Journal of Applied Physics. 119: 84502. DOI: 10.1063/1.4942222 |
0.39 |
|
| 2015 |
Feng M, He Q, Shi J, Qin L, Zhang X, Sun P, Wang Z. Effect of decabromodiphenyl ether (BDE-209) on a soil-biota system: Role of earthworms and ryegrass. Environmental Toxicology and Chemistry / Setac. PMID 26448514 DOI: 10.1002/etc.3272 |
0.477 |
|
| 2015 |
Ma L, Zhao X, Tang Z, Li Y, Sun F, Diao L, Ge G, Feng M, Wang J. Epidemiological Characteristics of Hypertension in the Elderly in Beijing, China. Plos One. 10: e0135480. PMID 26295836 DOI: 10.1371/journal.pone.0135480 |
0.588 |
|
| 2015 |
Huang J, Liu L, Feng M, An S, Zhou M, Li Z, Qi J, Shen H. Effect of CoCl2 on fracture repair in a rat model of bone fracture. Molecular Medicine Reports. PMID 26239779 DOI: 10.3892/mmr.2015.4122 |
0.521 |
|
| 2015 |
Ma L, Tang Z, Sun F, Diao L, Li Y, Wang J, Feng M, Qian Y. Risk factors for depression among elderly subjects with hypertension living at home in China. International Journal of Clinical and Experimental Medicine. 8: 2923-8. PMID 25932256 |
0.572 |
|
| 2015 |
Gao W, Tang Z, Zhang YF, Feng M, Qian M, Dimitrov DS, Ho M. Immunotoxin targeting glypican-3 regresses liver cancer via dual inhibition of Wnt signalling and protein synthesis. Nature Communications. 6: 6536. PMID 25758784 DOI: 10.1038/ncomms7536 |
0.587 |
|
| 2015 |
Feng M, He Q, Meng L, Zhang X, Sun P, Wang Z. Evaluation of single and joint toxicity of perfluorooctane sulfonate, perfluorooctanoic acid, and copper to Carassius auratus using oxidative stress biomarkers. Aquatic Toxicology (Amsterdam, Netherlands). 161: 108-16. PMID 25697679 DOI: 10.1016/j.aquatox.2015.01.025 |
0.479 |
|
| 2015 |
Feng M, Holonyak N. Metamorphosis of the transistor into a laser Epl. 109. DOI: 10.1209/0295-5075/109/18001 |
0.452 |
|
| 2015 |
Bambery R, Wang CY, Tan F, Feng M, Holonyak N. Single Quantum-Well Transistor Lasers Operating Error-Free at 22 Gb/s Ieee Photonics Technology Letters. 27: 600-603. DOI: 10.1109/Lpt.2014.2385833 |
0.43 |
|
| 2015 |
Feng M, Iverson EW, Wang CY, Holonyak N. Optical pulse generation in a transistor laser via intra-cavity photon-assisted tunneling and excess base carrier redistribution Applied Physics Letters. 107. DOI: 10.1063/1.4935121 |
0.37 |
|
| 2014 |
Wang XG, Huang JM, Feng MY, Ju ZH, Wang CF, Yang GW, Yuan JD, Zhong JF. Regulatory mutations in the A2M gene are involved in the mastitis susceptibility in dairy cows. Animal Genetics. 45: 28-37. PMID 25237709 |
0.526 |
|
| 2014 |
Guo F, Yang B, Ju ZH, Wang XG, Qi C, Zhang Y, Wang CF, Liu HD, Feng MY, Chen Y, Xu YX, Zhong JF, Huang JM. Alternative splicing, promoter methylation, and functional SNPs of sperm flagella 2 gene in testis and mature spermatozoa of Holstein bulls. Reproduction (Cambridge, England). 147: 241-52. PMID 24277870 DOI: 10.1530/REP-13-0343 |
0.528 |
|
| 2014 |
Wu M, Liu M, Bambery R, Feng M, Holonyak N. Low Power Operation of a Vertical Cavity Transistor Laser via the Reduction of Collector Offset Voltage Ieee Photonics Technology Letters. 26: 1003-1006. DOI: 10.1109/Lpt.2014.2312360 |
0.41 |
|
| 2014 |
Liu M, Wu M, Tan F, Bambery R, Feng M, Holonyak N. 780 nm Oxide-Confined VCSEL With 13.5 Gb/s Error-Free Data Transmission Ieee Photonics Technology Letters. 26: 702-705. DOI: 10.1109/Lpt.2014.2303169 |
0.377 |
|
| 2014 |
Tan F, Wu M, Liu M, Feng M, Holonyak N. 850 nm Oxide-VCSEL With Low Relative Intensity Noise and 40 Gb/s Error Free Data Transmission Ieee Photonics Technology Letters. 26: 289-292. DOI: 10.1109/Lpt.2013.2280726 |
0.384 |
|
| 2014 |
Xu H, Wu B, Iverson EW, Low TS, Feng M. 0.5 THz performance of a type-II DHBT with a doping-graded and constant-composition GaAsSb base Ieee Electron Device Letters. 35: 24-26. DOI: 10.1109/Led.2013.2290299 |
0.427 |
|
| 2014 |
Bambery R, Wang C, Dallesasse JM, Feng M, Holonyak N. Effect of the energy barrier in the base of the transistor laser on the recombination lifetime Applied Physics Letters. 104: 81117. DOI: 10.1063/1.4866778 |
0.421 |
|
| 2013 |
Tang Z, Feng M, Gao W, Phung Y, Chen W, Chaudhary A, St Croix B, Qian M, Dimitrov DS, Ho M. A human single-domain antibody elicits potent antitumor activity by targeting an epitope in mesothelin close to the cancer cell surface. Molecular Cancer Therapeutics. 12: 416-26. PMID 23371858 DOI: 10.1158/1535-7163.MCT-12-0731 |
0.586 |
|
| 2013 |
Bambery R, Tan F, Feng M, Dallesasse JM, Holonyak N. Voltage and Current Modulation at 20 Gb/s of a Transistor Laser at Room Temperature Ieee Photonics Technology Letters. 25: 859-862. DOI: 10.1109/Lpt.2013.2252887 |
0.386 |
|
| 2013 |
Xu H, Iverson EW, Liao CC, Cheng KY, Feng M. Composition-graded AlInP/AlGaAsSb/InP type-II DHBTs with f T/fMAX = 450/510GHz Ieee Electron Device Letters. 34: 33-35. DOI: 10.1109/Led.2012.2224090 |
0.405 |
|
| 2013 |
Liu M, Wu MK, Feng M, Holonyak N. Lateral feeding design and selective oxidation process in vertical cavity transistor laser Journal of Applied Physics. 114: 163104. DOI: 10.1063/1.4827855 |
0.354 |
|
| 2013 |
Tan F, Wu MK, Liu M, Feng M, Holonyak N. Relative intensity noise in high speed microcavity laser Applied Physics Letters. 103: 141116. DOI: 10.1063/1.4824360 |
0.382 |
|
| 2013 |
Wu MK, Liu M, Tan F, Feng M, Holonyak N. Selective oxidization cavity confinement for low threshold vertical cavity transistor laser Applied Physics Letters. 103: 11104. DOI: 10.1063/1.4813267 |
0.397 |
|
| 2013 |
Tan F, Xu W, Huang X, Feng M, Holonyak N. The effect of ground and first excited state transitions on transistor laser relative intensity noise Applied Physics Letters. 102: 81103. DOI: 10.1063/1.4794025 |
0.335 |
|
| 2012 |
Wu M, Feng M, Holonyak N. Surface Emission Vertical Cavity Transistor Laser Ieee Photonics Technology Letters. 24: 1346-1348. DOI: 10.1109/Lpt.2012.2203356 |
0.399 |
|
| 2012 |
Iverson EW, Feng M. Transistor laser power stabilization using direct collector current feedback control Ieee Photonics Technology Letters. 24: 4-6. DOI: 10.1109/Lpt.2011.2171679 |
0.337 |
|
| 2012 |
Tan F, Bambery R, Feng M, Holonyak N. Relative intensity noise of a quantum well transistor laser Applied Physics Letters. 101: 151118. DOI: 10.1063/1.4760225 |
0.414 |
|
| 2012 |
Wu MK, Feng M, Holonyak N. Voltage modulation of a vertical cavity transistor laser via intra-cavity photon-assisted tunneling Applied Physics Letters. 101: 81102. DOI: 10.1063/1.4745791 |
0.424 |
|
| 2012 |
Then HW, Tan F, Feng M, Holonyak N. Transistor laser optical and electrical linearity enhancement with collector current feedback Applied Physics Letters. 100: 221104. DOI: 10.1063/1.4723874 |
0.766 |
|
| 2012 |
Xu H, Iverson EW, Cheng KY, Feng M. Physical origins of nonlinearity in InP double heterojunction bipolar transistors Applied Physics Letters. 100. DOI: 10.1063/1.3694285 |
0.336 |
|
| 2011 |
Zhang ZY, Tang Z, Feng M. [Regional disparity on life expectancy, active life expectancy in the elderly from Beijing]. Zhonghua Liu Xing Bing Xue Za Zhi = Zhonghua Liuxingbingxue Zazhi. 32: 864-8. PMID 22340871 |
0.58 |
|
| 2011 |
Feng M, Holonyak N. The Metamorphosis of the Transistor into a Laser Optics & Photonics News. 22: 44-49. DOI: 10.1364/Opn.22.3.000044 |
0.374 |
|
| 2011 |
Chan DA, Feng M. A Compact W-Band CMOS Power Amplifier With Gain Boosting and Short-Circuited Stub Matching for High Power and High Efficiency Operation Ieee Microwave and Wireless Components Letters. 21: 98-100. DOI: 10.1109/Lmwc.2010.2097584 |
0.347 |
|
| 2011 |
Cheng KY(, Xu H, Stuenkel ME, Iverson EW, Liao CC, Yang KW, Feng M. Base charge accumulation and push-out effects on nonlinearity of Type-I InP/InGaAs/InP and Type-I/II AlInP/GaAsSb/InP double heterojunction bipolar transistors Journal of Applied Physics. 110: 113703. DOI: 10.1063/1.3662152 |
0.804 |
|
| 2011 |
Huang Y, Ryou JH, Dupuis RD, Dixon F, Feng M, Holonyak N, Kuciauskas D. Doping-dependent device functionality of InP/InAlGaAs long-wavelength light-emitting transistors Applied Physics Letters. 99. DOI: 10.1063/1.3633345 |
0.814 |
|
| 2011 |
Tan F, Bambery R, Feng M, Holonyak N. Transistor laser with simultaneous electrical and optical output at 20 and 40 Gb/s data rate modulation Applied Physics Letters. 99: 61105. DOI: 10.1063/1.3622110 |
0.431 |
|
| 2011 |
Cheng KYD, Liao CC, Xu H, Cheng KYN, Feng M. Hot electron injection effect on the microwave performance of type-I/II AlInP/GaAsSb/InP double-heterojunction bipolar transistors Applied Physics Letters. 98: 242103. DOI: 10.1063/1.3599582 |
0.455 |
|
| 2011 |
Tan F, Wu CH, Feng M, Holonyak N. Energy efficient microcavity lasers with 20 and 40 Gb/s data transmission Applied Physics Letters. 98: 191107. DOI: 10.1063/1.3589363 |
0.383 |
|
| 2011 |
Feng M, Bambery R, Holonyak N. Bandfilling and photon-assisted tunneling in a quantum-well transistor laser Applied Physics Letters. 98: 123505. DOI: 10.1063/1.3569949 |
0.402 |
|
| 2011 |
Huang Y, Ryou JH, Dupuis RD, Dixon F, Feng M, Holonyak N. InP/InAlGaAs light-emitting transistors and transistor lasers with a carbon-doped base layer Journal of Applied Physics. 109. DOI: 10.1063/1.3561368 |
0.822 |
|
| 2011 |
Wu CH, Tan F, Wu MK, Feng M, Holonyak N. The effect of microcavity laser recombination lifetime on microwave bandwidth and eye-diagram signal integrity Journal of Applied Physics. 109: 53112. DOI: 10.1063/1.3553876 |
0.4 |
|
| 2011 |
Feng M, Holonyak N, James A. Temperature dependence of a high-performance narrow-stripe (1 μm) single quantum-well transistor laser Applied Physics Letters. 98: 51107. DOI: 10.1063/1.3528206 |
0.353 |
|
| 2010 |
Zhang ZY, Tang Z, Feng M. [The impact of hypertension on active life expectancy among senior citizens of Beijing]. Zhonghua Liu Xing Bing Xue Za Zhi = Zhonghua Liuxingbingxue Zazhi. 31: 733-6. PMID 21162832 |
0.578 |
|
| 2010 |
Zhao Y, Liu C, Feng M, Chen Z, Li S, Tian G, Wang L, Huang J, Li S. Solid phase extraction of uranium(VI) onto benzoylthiourea-anchored activated carbon. Journal of Hazardous Materials. 176: 119-24. PMID 19963318 DOI: 10.1016/j.jhazmat.2009.11.005 |
0.531 |
|
| 2010 |
Nguyen GD, Feng M. Drifting-Dipole Noise (DDN) Model of MOSFETs for Microwave Circuit Design Ieee Transactions On Microwave Theory and Techniques. 58: 3433-3443. DOI: 10.1109/Tmtt.2010.2081530 |
0.347 |
|
| 2010 |
Dixon F, Feng M, Holonyak N. Design and operation of distributed feedback transistor lasers Journal of Applied Physics. 108: 93109. DOI: 10.1063/1.3504608 |
0.815 |
|
| 2010 |
Wu CH, Tan F, Feng M, Holonyak N. The effect of mode spacing on the speed of quantum-well microcavity lasers Applied Physics Letters. 97: 91103. DOI: 10.1063/1.3485048 |
0.334 |
|
| 2010 |
Then HW, Wu CH, Feng M, Holonyak N, Walter G. Stochastic base doping and quantum-well enhancement of recombination in an n-p-n light-emitting transistor or transistor laser Applied Physics Letters. 96: 263505. DOI: 10.1063/1.3458708 |
0.782 |
|
| 2010 |
Dixon F, Feng M, Holonyak N. Distributed feedback transistor laser Applied Physics Letters. 96: 241103. DOI: 10.1063/1.3453656 |
0.822 |
|
| 2010 |
Wu CH, Then HW, Feng M, Holonyak N. Microwave determination of electron-hole recombination dynamics from spontaneous to stimulated emission in a quantum-well microcavity laser Applied Physics Letters. 96: 131108. DOI: 10.1063/1.3377918 |
0.774 |
|
| 2010 |
Then HW, Wu CH, Feng M, Holonyak N. Microwave characterization of Purcell enhancement in a microcavity laser Applied Physics Letters. 96: 131107. DOI: 10.1063/1.3377913 |
0.769 |
|
| 2010 |
Then HW, Feng M, Holonyak N. Microwave circuit model of the three-port transistor laser Journal of Applied Physics. 107: 94509. DOI: 10.1063/1.3371802 |
0.781 |
|
| 2010 |
Then HW, Feng M, Holonyak N. Physics of base charge dynamics in the three port transistor laser Applied Physics Letters. 96: 113509. DOI: 10.1063/1.3364143 |
0.332 |
|
| 2009 |
Zhang ZY, Tang Z, Feng M. [The evolvement of health expectancy]. Zhonghua Liu Xing Bing Xue Za Zhi = Zhonghua Liuxingbingxue Zazhi. 30: 860-2. PMID 20193215 |
0.57 |
|
| 2009 |
Huang J, Zheng C, Feng M, Zhan HB. [Kinetic study on the in situ synthesis of nickle phthalocyanine in silica gel glass matrix by UV/Vis absorption spectra]. Guang Pu Xue Yu Guang Pu Fen Xi = Guang Pu. 29: 207-10. PMID 19385240 |
0.563 |
|
| 2009 |
Huang J, Zheng C, Feng M, Zhan HB. [Preparation of surface-modified carbon nanotubes/silica composite gel glass]. Guang Pu Xue Yu Guang Pu Fen Xi = Guang Pu. 29: 52-5. PMID 19385204 |
0.534 |
|
| 2009 |
Kocabas C, Dunham S, Cao Q, Cimino K, Ho X, Kim HS, Dawson D, Payne J, Stuenkel M, Zhang H, Banks T, Feng M, Rotkin SV, Rogers JA. High-frequency performance of submicrometer transistors that use aligned arrays of single-walled carbon nanotubes. Nano Letters. 9: 1937-43. PMID 19354278 DOI: 10.1021/Nl9001074 |
0.806 |
|
| 2009 |
Wu C, Walter G, Then HW, Feng M, Holonyak N. 4-GHz Modulation Bandwidth of Integrated 2 $\,\times\,$ 2 LED Array Ieee Photonics Technology Letters. 21: 1834-1836. DOI: 10.1109/Lpt.2009.2034385 |
0.807 |
|
| 2009 |
Feng M, Then HW, Holonyak N, Walter G, James A. Resonance-free frequency response of a semiconductor laser Applied Physics Letters. 95: 33509. DOI: 10.1063/1.3184580 |
0.774 |
|
| 2009 |
Walter G, Wu CH, Then HW, Feng M, Holonyak N. Tilted-charge high speed (7 GHz) light emitting diode Applied Physics Letters. 94: 231125. DOI: 10.1063/1.3154565 |
0.775 |
|
| 2009 |
Walter G, Wu CH, Then HW, Feng M, Holonyak N. 4.3 GHz optical bandwidth light emitting transistor Applied Physics Letters. 94: 241101. DOI: 10.1063/1.3153146 |
0.795 |
|
| 2009 |
Wu CH, Walter G, Then HW, Feng M, Holonyak N. Scaling of light emitting transistor for multigigahertz optical bandwidth Applied Physics Letters. 94: 171101. DOI: 10.1063/1.3126642 |
0.794 |
|
| 2009 |
Then HW, Wu CH, Walter G, Feng M, Holonyak N. Electrical-optical signal mixing and multiplication (2-->22 GHz) with a tunnel junction transistor laser Applied Physics Letters. 94: 101114. DOI: 10.1063/1.3100294 |
0.783 |
|
| 2009 |
Feng M, Holonyak N, Then HW, Wu CH, Walter G. Tunnel junction transistor laser Applied Physics Letters. 94: 41118. DOI: 10.1063/1.3077020 |
0.778 |
|
| 2009 |
Then HW, Feng M, Holonyak N. Bandwidth extension by trade-off of electrical and optical gain in a transistor laser: Three-terminal control Applied Physics Letters. 94: 13509. DOI: 10.1063/1.3068489 |
0.764 |
|
| 2009 |
Liao C, Cheng D, Cheng C, Cheng KY, Feng M, Chiang TH, Kwo J, Hong M. Inversion-channel enhancement-mode GaAs MOSFETs with regrown source and drain contacts Journal of Crystal Growth. 311: 1958-1961. DOI: 10.1016/J.Jcrysgro.2008.11.064 |
0.361 |
|
| 2008 |
Dimitrov V, Heng J, Timp K, Dimauro O, Chan R, Hafez M, Feng J, Sorsch T, Mansfield W, Miner J, Kornblit A, Klemens F, Bower J, Cirelli R, Ferry EJ, ... ... Feng M, et al. Small-Signal Performance and Modeling of sub-50nm nMOSFETs with f above 460-GHz. Solid-State Electronics. 52: 899-908. PMID 20706596 DOI: 10.1016/J.Sse.2008.01.025 |
0.429 |
|
| 2008 |
Zhen X, Feng M, Zheng C, Huang J, Zhan HB. [Linear and nonlinear optical properties of zinc phthalocyanines]. Guang Pu Xue Yu Guang Pu Fen Xi = Guang Pu. 28: 403-6. PMID 18479032 |
0.545 |
|
| 2008 |
Feng M, Zhen X, Zheng C, Huang J, Zhan HB. [Optical limiting cycling performance and photostability of vanadyl phthalocyanines and naphthalocyanines]. Guang Pu Xue Yu Guang Pu Fen Xi = Guang Pu. 28: 145-7. PMID 18422139 |
0.558 |
|
| 2008 |
Chuang YJ, Cimino K, Stuenkel M, Snodgrass W, Feng M. Radio-frequency-noise characterization and modeling of type-II InP-GaAsSb DHBT Ieee Electron Device Letters. 29: 21-23. DOI: 10.1109/Led.2007.912017 |
0.77 |
|
| 2008 |
Then HW, Walter G, Feng M, Holonyak N. Optical bandwidth enhancement of heterojunction bipolar transistor laser operation with an auxiliary base signal Applied Physics Letters. 93: 163504. DOI: 10.1063/1.3000635 |
0.781 |
|
| 2008 |
Dixon F, Feng M, Holonyak N, Huang Y, Zhang XB, Ryou JH, Dupuis RD. Transistor laser with emission wavelength at 1544 nm Applied Physics Letters. 93. DOI: 10.1063/1.2958228 |
0.809 |
|
| 2008 |
Huang Y, Zhang XB, Ryou JH, Dupuis RD, Dixon F, Holonyak N, Feng M. InAlGaAsInP light-emitting transistors operating near 1.55 μm Journal of Applied Physics. 103. DOI: 10.1063/1.2939243 |
0.813 |
|
| 2007 |
Zhen X, Feng M, Zheng C, Huang J, Zhan HB. [Photostability and optical limiting cycling behavior of chloroindium (III) phthalocyanine]. Guang Pu Xue Yu Guang Pu Fen Xi = Guang Pu. 27: 2291-3. PMID 18260416 |
0.577 |
|
| 2007 |
James A, Holonyak N, Feng M, Walter G. Franz–Keldysh Photon-Assisted Voltage-Operated Switching of a Transistor Laser Ieee Photonics Technology Letters. 19: 680-682. DOI: 10.1109/Lpt.2007.895049 |
0.413 |
|
| 2007 |
Then HW, Walter G, Feng M, Holonyak N. Collector characteristics and the differential optical gain of a quantum-well transistor laser Applied Physics Letters. 91: 243508. DOI: 10.1063/1.2824817 |
0.765 |
|
| 2007 |
Chu-Kung BF, Wu CH, Walter G, Feng M, Holonyak N, Chung T, Ryou JH, Dupuis RD. Modulation of high current gain (Β49) light-emitting InGaNGaN heterojunction bipolar transistors Applied Physics Letters. 91. DOI: 10.1063/1.2821380 |
0.449 |
|
| 2007 |
Then HW, Feng M, Holonyak N. Optical bandwidth enhancement by operation and modulation of the first excited state of a transistor laser Applied Physics Letters. 91: 183505. DOI: 10.1063/1.2805014 |
0.758 |
|
| 2007 |
Feng M, Holonyak N, Then HW, Walter G. Charge control analysis of transistor laser operation Applied Physics Letters. 91: 53501. DOI: 10.1063/1.2767172 |
0.78 |
|
| 2007 |
Then HW, Feng M, Holonyak N, Wu CH. Experimental determination of the effective minority carrier lifetime in the operation of a quantum-well n-p-n heterojunction bipolar light-emitting transistor of varying base quantum-well design and doping Applied Physics Letters. 91: 33505. DOI: 10.1063/1.2759263 |
0.766 |
|
| 2007 |
James A, Walter G, Feng M, Holonyak N. Photon-assisted breakdown, negative resistance, and switching in a quantum-well transistor laser Applied Physics Letters. 90: 152109. DOI: 10.1063/1.2721364 |
0.323 |
|
| 2007 |
Walter G, James A, Holonyak N, Feng M. Chirp in a transistor laser: Franz-Keldysh reduction of the linewidth enhancement Applied Physics Letters. 90: 91109. DOI: 10.1063/1.2709964 |
0.372 |
|
| 2007 |
Wu BR, Snodgrass W, Feng M, Cheng KY. High-speed InGaAsSb/InP double heterojunction bipolar transistor with composition graded base and InAs emitter contact layers Journal of Crystal Growth. 301: 1005-1008. DOI: 10.1016/J.Jcrysgro.2006.11.143 |
0.808 |
|
| 2006 |
Liao YS, Shi JW, Wu YS, Kuo HC, Feng M, Lin GR. Optically heterodyne diagnosis of a high-saturation-power undoped InP sandwiched InGaAs p-i-n photodiode grown on GaAs. Optics Express. 14: 5031-7. PMID 19516663 DOI: 10.1364/Oe.14.005031 |
0.405 |
|
| 2006 |
Wu BR, Chu-Kung BF, Feng M, Cheng KY. High performance GaAsSb∕InP double heterojunction bipolar transistors grown by gas-source molecular beam epitaxy Journal of Vacuum Science & Technology B. 24: 1564-1567. DOI: 10.1116/1.2190678 |
0.387 |
|
| 2006 |
Chuang YJ, Cimino K, Stuenkel M, Feng M, Le M, Milano R. A wideband InP DHBT true logarithmic amplifier Ieee Transactions On Microwave Theory and Techniques. 54: 3843-3847. DOI: 10.1109/Tmtt.2006.883239 |
0.792 |
|
| 2006 |
Lai JW, Chuang YJ, Cimino K, Feng M. Design of variable gain amplifier with gain-bandwidth product up to 354 GHz implemented in InP-InGaAs DHBT technology Ieee Transactions On Microwave Theory and Techniques. 54: 599-607. DOI: 10.1109/Tmtt.2005.862676 |
0.794 |
|
| 2006 |
Holonyak N, Feng M. The transistor laser Ieee Spectrum. 43: 50-55. DOI: 10.1109/Mspec.2006.1584362 |
0.371 |
|
| 2006 |
Liao Y, Lin G, Kuo H, Feng K, Feng M. 10-gb/s operation of an In/sub 0.53/Ga/sub 0.47/As p-i-n photodiode on metamorphic InGaP buffered semi-insulating GaAs substrate Ieee Photonics Technology Letters. 18: 1822-1824. DOI: 10.1109/Lpt.2006.877623 |
0.39 |
|
| 2006 |
Feng M, Holonyak N, Chan R, James A, Walter G. High-speed (/spl ges/1 GHz) electrical and optical adding, mixing, and processing of square-wave signals with a transistor laser Ieee Photonics Technology Letters. 18: 1240-1242. DOI: 10.1109/Lpt.2006.875333 |
0.668 |
|
| 2006 |
Snodgrass W, Wu B, Hafez W, Cheng K, Feng M. Graded base type-II InP/GaAsSb DHBT with f/sub T/=475 GHz Ieee Electron Device Letters. 27: 84-86. DOI: 10.1109/Led.2005.862673 |
0.796 |
|
| 2006 |
Feng M, Holonyak N, James A, Cimino K, Walter G, Chan R. Carrier lifetime and modulation bandwidth of a quantum well AlGaAs/InGaP/GaAs/InGaAs transistor laser Applied Physics Letters. 89. DOI: 10.1063/1.2346369 |
0.708 |
|
| 2006 |
Chu-Kung BF, Feng M, Walter G, Holonyak N, Chung T, Ryou JH, Limb J, Yoo D, Shen SC, Dupuis RD, Keogh D, Asbeck PM. Graded-base InGaN/GaN heterojunction bipolar light-emitting transistors Applied Physics Letters. 89. DOI: 10.1063/1.2336619 |
0.432 |
|
| 2006 |
Walter G, James A, Holonyak N, Feng M, Chan R. Collector breakdown in the heterojunction bipolar transistor laser Applied Physics Letters. 88: 232105. DOI: 10.1063/1.2210079 |
0.712 |
|
| 2006 |
Snodgrass W, Wu BR, Hafez W, Cheng KY, Feng M. Performance enhancement of composition-graded-base type-II InP∕GaAsSb double-heterojunction bipolar transistors with fT>500GHz Applied Physics Letters. 88: 222101. DOI: 10.1063/1.2207843 |
0.811 |
|
| 2006 |
Chung T, Limb J, Yoo D, Ryou JH, Lee W, Shen SC, Dupuis RD, Chu-Kung B, Feng M, Keogh DM, Asbeck PM. Device operation of InGaN heterojunction bipolar transistors with a graded emitter-base design Applied Physics Letters. 88. DOI: 10.1063/1.2198014 |
0.813 |
|
| 2006 |
Chan R, Feng M, Holonyak N, James A, Walter G. Collector current map of gain and stimulated recombination on the base quantum well transitions of a transistor laser Applied Physics Letters. 88: 143508. DOI: 10.1063/1.2191448 |
0.69 |
|
| 2006 |
Feng M, Holonyak N, Chan R, James A, Walter G. Signal mixing in a multiple input transistor laser near threshold Applied Physics Letters. 88: 63509. DOI: 10.1063/1.2171834 |
0.696 |
|
| 2006 |
Dixon F, Chan R, Walter G, Holonyak N, Feng M, Zhang XB, Ryou JH, Dupuis RD. Visible spectrum light-emitting transistors Applied Physics Letters. 88. DOI: 10.1063/1.2158704 |
0.805 |
|
| 2006 |
Chung T, Limb J, Ryou JH, Lee W, Li P, Yoo D, Zhang XB, Shen SC, Dupuis RD, Keogh D, Asbeck P, Chukung B, Feng M, Zakharov D, Lilienthal-Weber Z. Growth of InGaN HBTs by MOCVD Journal of Electronic Materials. 35: 695-700. DOI: 10.1007/S11664-006-0123-Z |
0.342 |
|
| 2005 |
Liao YS, Lin GR, Lin CK, Chu YS, Kuo HC, Feng M. 10Gbps Operation of a Metamorphic InGaP Buffered In 0.53 Ga 0.47 As p-i-n Photodetector Grown on GaAs Substrate Proceedings of Spie. 6020: 602023. DOI: 10.1117/12.636697 |
0.417 |
|
| 2005 |
Caruth DC, Chu-Kung BF, Feng M. 10-GHz power performance of a type II InP/GaAsSb DHBT Ieee Electron Device Letters. 26: 604-606. DOI: 10.1109/Led.2005.854355 |
0.401 |
|
| 2005 |
Lin G, Kuo H, Lin C, Feng M. Ultralow leakage In/sub 0.53/Ga/sub 0.47/As p-i-n photodetector grown on linearly graded metamorphic In/sub x/Ga/sub 1-x/P buffered GaAs substrate Ieee Journal of Quantum Electronics. 41: 749-752. DOI: 10.1109/Jqe.2005.847570 |
0.342 |
|
| 2005 |
Hafez W, Snodgrass W, Feng M. 12.5 nm base pseudomorphic heterojunction bipolar transistors achieving fT=710GHz and fMAX=340GHz Applied Physics Letters. 87: 252109. DOI: 10.1063/1.2149510 |
0.813 |
|
| 2005 |
Feng M, Holonyak N, Walter G, Chan R. Room temperature continuous wave operation of a heterojunction bipolar transistor laser Applied Physics Letters. 87: 131103. DOI: 10.1063/1.2058213 |
0.714 |
|
| 2005 |
Hafez W, Feng M. Experimental demonstration of pseudomorphic heterojunction bipolar transistors with cutoff frequencies above 600GHz Applied Physics Letters. 86: 152101. DOI: 10.1063/1.1897831 |
0.823 |
|
| 2005 |
Chan R, Feng M, Holonyak N, Walter G. Microwave operation and modulation of a transistor laser Applied Physics Letters. 86: 131114. DOI: 10.1063/1.1889243 |
0.717 |
|
| 2004 |
Zang GQ, Xi M, Feng ML, Ji Y, Yu YS, Tang ZH. Curative effects of interferon-alpha and HLA-DRB1 -DQA1 and -DQB1 alleles in chronic viral hepatitis B. World Journal of Gastroenterology. 10: 2116-8. PMID 15237447 DOI: 10.3748/wjg.v10.i14.2116 |
0.576 |
|
| 2004 |
Yan DC, Dong SL, Huang J, Yu XM, Feng MY, Liu XY. White spot syndrome virus (WSSV) detected by PCR in rotifers and rotifer resting eggs from shrimp pond sediments. Diseases of Aquatic Organisms. 59: 69-73. PMID 15212294 DOI: 10.3354/dao059069 |
0.518 |
|
| 2004 |
Keogh DM, Li JC, Conway AM, Qiao D, Raychaudhuri S, Asbeck PM, Dupuis RD, Feng M. Analysis of GaN HBT structures for high power, high efficiency microwave amplifiers International Journal of High Speed Electronics and Systems. 14: 831-836. DOI: 10.1142/S0129156404002910 |
0.387 |
|
| 2004 |
Lai JW, Hafez W, Feng M. VERTICAL SCALING OF TYPE I InP HBT WITH FT > 500 GHZ International Journal of High Speed Electronics and Systems. 14: 625-631. DOI: 10.1142/S0129156404002582 |
0.807 |
|
| 2004 |
Hampson MD, Shen SC, Schwindt RS, Price RK, Chowdhury U, Wong MM, Gang Zhu T, Yoo D, Dupuis RD, Feng M. Polyimide passivated AlGaN-GaN HFETs with 7.65 W/mm at 18 GHz Ieee Electron Device Letters. 25: 238-240. DOI: 10.1109/Led.2004.826565 |
0.549 |
|
| 2004 |
He Q, Feng M. Low-power, high-gain, and high-linearity SiGe BiCMOS wide-band low-noise amplifier Ieee Journal of Solid-State Circuits. 39: 956-959. DOI: 10.1109/Jssc.2004.827801 |
0.613 |
|
| 2004 |
Walter G, Holonyak N, Feng M, Chan R. Laser operation of a heterojunction bipolar light-emitting transistor Applied Physics Letters. 85: 4768-4770. DOI: 10.1063/1.1818331 |
0.697 |
|
| 2004 |
Feng M, Holonyak N, Chu-Kung B, Walter G, Chan R. Type-II GaAsSb/InP heterojunction bipolar light-emitting transistor Applied Physics Letters. 84: 4792-4794. DOI: 10.1063/1.1760595 |
0.805 |
|
| 2004 |
Feng M, Holonyak N, Chan R. Quantum-well-base heterojunction bipolar light-emitting transistor Applied Physics Letters. 84: 1952-1954. DOI: 10.1063/1.1669071 |
0.706 |
|
| 2004 |
Feng M, Holonyak N, Hafez W. Light-emitting transistor: Light emission from InGaP/GaAs heterojunction bipolar transistors Applied Physics Letters. 84: 151-153. DOI: 10.1063/1.1637950 |
0.814 |
|
| 2004 |
Chu-Kung BF, Feng M. InP/GaAsSb type-II DHBTs with fT>350 GHz Electronics Letters. 40: 1305-1306. DOI: 10.1049/El:20046286 |
0.458 |
|
| 2004 |
Hafez W, Feng M. Lateral scaling of 0.25 μm InP/InGaAs SHBTs with InAs emitter cap Electronics Letters. 40: 1151-1153. DOI: 10.1049/El:20045962 |
0.817 |
|
| 2004 |
Chowdhury U, Price RK, Wong MM, Yoo D, Zhang X, Feng M, Dupuis RD. Modulation-doped superlattice AlGaN barrier GaN/AlGaN HFETs Journal of Crystal Growth. 272: 318-321. DOI: 10.1016/J.Jcrysgro.2004.08.058 |
0.367 |
|
| 2003 |
Wong MM, Chowdhury U, Sicault D, Becher DT, Denyszyn JC, Choi JH, Zhu TG, Feng M, Dupuis RD. Improved performance of AlGaN/GaN heterojunction field-effect transistors using delta doping and a binary barrier Japanese Journal of Applied Physics, Part 2: Letters. 42: L353-L355. DOI: 10.1143/Jjap.42.L353 |
0.813 |
|
| 2003 |
Hafez W, Lai J, Feng M. Vertical scaling of 0.25-μm emitter InP/InGaAs single heterojunction bipolar transistors with f/sub T/ of 452 GHz Ieee Electron Device Letters. 24: 436-438. DOI: 10.1109/Led.2003.814990 |
0.813 |
|
| 2003 |
Hafez W, Lai J, Feng M. Low-power high-speed operation of submicron InP-InGaAs SHBTs at 1 mA Ieee Electron Device Letters. 24: 427-429. DOI: 10.1109/Led.2003.814008 |
0.809 |
|
| 2003 |
Hafez W, Lai J, Feng M. Submicron InP-InGaAs single heterojunction bipolar transistors with f/sub T/ of 377 GHz Ieee Electron Device Letters. 24: 292-294. DOI: 10.1109/Led.2003.812530 |
0.803 |
|
| 2003 |
Chan R, Lesnick R, Becher D, Feng M. Low-actuation voltage RF MEMS shunt switch with cold switching lifetime of seven billion cycles Ieee\/Asme Journal of Microelectromechanical Systems. 12: 713-719. DOI: 10.1109/Jmems.2003.817889 |
0.781 |
|
| 2003 |
Hafez W, Lai JW, Feng M. InP/InGaAs SHBTs with 75 nm collector and ft> 500 GHz Electronics Letters. 39: 1475-1476. DOI: 10.1049/El:20030951 |
0.833 |
|
| 2003 |
Hafez W, Lai JW, Feng M. Record fT and fT+fMAX performance of InP/InGaAs single heterojunction bipolar transistors Electronics Letters. 39: 811-813. DOI: 10.1049/El:20030534 |
0.803 |
|
| 2002 |
Huang JJ, Chung T, Lerttamrab M, Chuang SL, Feng M. 1.55-μm asymmetric fabry-pérot modulator (AFPM) for high-speed applications Ieee Photonics Technology Letters. 14: 1689-1691. DOI: 10.1109/Lpt.2002.804673 |
0.424 |
|
| 2002 |
Shen SC, Becher D, Fan Z, Caruth D, Feng M. Development Of Broadband Low Actuation Voltage Rf Mem Switches Active and Passive Electronic Components. 25: 97-111. DOI: 10.1080/08827510211282 |
0.797 |
|
| 2002 |
Wong MM, Chowdhury U, Sicault D, Becher DT, Denyszyn JC, Zhu TG, Feng M, Dupuis RD. Delta-doped AlGaN/AlN/GaN microwave HFETs grown by metalorganic chemical vapour deposition Electronics Letters. 38: 428-429. DOI: 10.1049/El:20020247 |
0.821 |
|
| 2001 |
Huang JJ, Hattendorf M, Feng M, Lambert DJH, Shelton BS, Wong MM, Chowdhury U, Zhu TG, Kwon HK, Dupuis RD. Temperature dependent common emitter current gain and collector-emitter offset voltage study in AlGaN/GaN heterojunction bipolar transistors Ieee Electron Device Letters. 22: 157-159. DOI: 10.1109/55.915594 |
0.36 |
|
| 2001 |
Shelton BS, Lambert DJH, Huang JJ, Wong MM, Chowdhury U, Zhu TG, Kwon HK, Liliental-Weber Z, Benarama M, Feng M, Dupuis RD. Selective area growth and characterization of AlGaN/GaN heterojunction bipolar transistors by metalorganic chemical vapor deposition Ieee Transactions On Electron Devices. 48: 490-494. DOI: 10.1109/16.906441 |
0.381 |
|
| 2001 |
Huang JJ, Caruth D, Feng M, Lambert DJH, Shelton BS, Wong MM, Chowdhury U, Zhu TG, Kwon HK, Dupuis RD. Room and low temperature study of common emitter current gain in AlGaN/GaN heterojunction bipolar transistors Electronics Letters. 37: 393-395. DOI: 10.1049/El:20010263 |
0.353 |
|
| 2000 |
Tang Z, Hsia H, Kuo HC, Caruth D, Stillman GE, Feng M. 188 GHz doped-channel In0.8Ga0.2P/In0.53Ga0.47As/InP HFETs Electronics Letters. 36: 1657-1659. DOI: 10.1049/El:20001170 |
0.597 |
|
| 2000 |
Huang JJ, Hattendorf M, Feng M, Lambert DJH, Shelton BS, Wong MM, Chowdhury U, Zhu TG, Kwon HK, Dupuis RD. Graded-emitter AlGaN/GaN heterojunction bipolar transistors Electronics Letters. 36: 1239-1240. DOI: 10.1049/El:20000887 |
0.446 |
|
| 2000 |
Shelton BS, Huang JJ, Lambert DJH, Zhu TG, Wong MM, Eiting CJ, Kwon HK, Feng M, Dupuis RD. AlGaN/GaN heterojunction bipolar transistors grown by metal organic chemical vapour deposition Electronics Letters. 36: 80-81. DOI: 10.1049/El:20000053 |
0.382 |
|
| 2000 |
Lambert DJH, Huang JJ, Shelton BS, Wong MM, Chowdhury U, Zhu TG, Kwon HK, Liliental-Weber Z, Benarama M, Feng M, Dupuis RD. Growth of AlGaN/GaN heterojunction bipolar transistors by metalorganic chemical vapor deposition Journal of Crystal Growth. 221: 730-733. DOI: 10.1016/S0022-0248(00)00808-3 |
0.408 |
|
| 1999 |
Kuo HC, Ahmari D, Moser BG, Mu J, Hattendorf M, Scott D, Meyer R, Feng M, Stillman GE. Growth of carbon doping Ga0.47In0.53As using CBr4 by gas source molecular beam epitaxy for InP/InGaAs heterojunction bipolar transistor applications Journal of Vacuum Science & Technology B. 17: 1185-1189. DOI: 10.1116/1.590720 |
0.4 |
|
| 1999 |
Kuo HC, Moser BG, Hsia H, Tang Z, Feng M, Stillman GE, Lin CH, Chen H. Growth of high performance InGaAs/InP doped channel heterojunction field effect transistor with a strained GaInP Schottky barrier enhancement layer by gas source molecular beam epitaxy Journal of Vacuum Science & Technology B. 17: 1139-1143. DOI: 10.1116/1.590709 |
0.377 |
|
| 1999 |
Hsia H, Tang Z, Caruth D, Becher D, Feng M. Direct ion-implanted 0.12 μm GaAs MESFET with f/sub t/ of 121 GHz and f/sub max/ of 160 GHz Ieee Electron Device Letters. 20: 245-247. DOI: 10.1109/55.761028 |
0.396 |
|
| 1999 |
Dupuis RD, Eiting CJ, Grudowski PA, Hsia H, Tang Z, Becher D, Kuo H, Stillman GE, Feng M. Activation of silicon ion-implanted gallium nitride by furnance annealing Journal of Electronic Materials. 28: 319-324. DOI: 10.1007/S11664-999-0034-X |
0.779 |
|
| 1998 |
Zhang XF, Feng MF, Wu CH, Zhou PA. [Properties of the GM-CSF-induced outward K+ current in murine peritoneal exudate macrophages]. Sheng Li Xue Bao : [Acta Physiologica Sinica]. 50: 153-62. PMID 11324529 |
0.58 |
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| 1998 |
Sengupta DK, Kim S, Kuo HC, Curtis AP, Hsieh KC, Bishop SG, Feng M, Stillman GE, Gunapala SD, Bandara SV, Chang YC, Liu HC. Bandgap Shifting of an Ultra-Thin InGaAs/InP Quantum Well Infrared Photodetector via Rapid Thermal Annealing Mrs Proceedings. 525. DOI: 10.1557/Proc-525-385 |
0.35 |
|
| 1998 |
Sengupta D, Jandhyala V, Kim S, Fang W, Malin J, Apostolakis P, Hseih KC, Chang YC, Chuang SL, Bandara S, Gunapala S, Feng M, Michielssen E, Stillman G. Redshifting and broadening of quantum-well infrared photodetector's response via impurity-free vacancy disordering Ieee Journal On Selected Topics in Quantum Electronics. 4: 746-757. DOI: 10.1109/2944.720488 |
0.58 |
|
| 1998 |
Jandhyala V, Sengupta D, Shanker B, Michielssen E, Feng M, Stillman G. Efficient electromagnetic analysis of two-dimensional finite quasi-random gratings for quantum well infrared photodetectors Journal of Applied Physics. 83: 3360-3363. DOI: 10.1063/1.367135 |
0.309 |
|
| 1998 |
Eiting CJ, Grudowski PA, Dupuis RD, Hsia H, Tang Z, Becher D, Kuo H, Stillman GE, Feng M. Activation studies of low-dose Si implants in gallium nitride Applied Physics Letters. 73: 3875-3877. DOI: 10.1063/1.122922 |
0.773 |
|
| 1998 |
Fendrich JA, Feng M. Temperature dependence of noise in a GaAs metal-semiconductor field effect transistor at microwave frequencies Applied Physics Letters. 73: 2182-2184. DOI: 10.1063/1.122416 |
0.33 |
|
| 1998 |
Fendrich JA, Feng M. Nearly noise-free transistor operated in the 2-18 GHz range Applied Physics Letters. 72: 368-370. DOI: 10.1063/1.120739 |
0.313 |
|
| 1998 |
Sengupta DK, Weisman MB, Feng M, Chuang SL, Chang YC, Cooper L, Adesida I, Bloom I, Hsieh KC, Fang W, Malin JI, Curtis AP, Horton T, Stillman GE, Gunapala SD, et al. Growth and characterization of n-type GaAs/AlGaAs quantum well infrared photodetector on GaAs-on-Si substrate Journal of Electronic Materials. 27: 858-865. DOI: 10.1007/S11664-998-0110-7 |
0.615 |
|
| 1997 |
Sengupta DK, Gunapala SD, Bandara SV, Pool F, Liu JK, McKelvey M, Luong E, Torezan J, Mumulo J, Hong W, Gill J, Stillman GE, Curtis AP, Kim S, Chou LJ, ... ... Feng M, et al. Monolithically Integrated Dual-Band Quantum Well Infrared Photodetector Mrs Proceedings. 484. DOI: 10.1557/Proc-484-205 |
0.622 |
|
| 1997 |
Ahmari DA, Fresina MT, Hartmann QJ, Barlage DW, Feng M, Stillman GE. InGaP/GaAs heterojunction bipolar transistor grown on a semi-insulating InGaP buffer layer Ieee Electron Device Letters. 18: 559-561. DOI: 10.1109/55.641445 |
0.621 |
|
| 1997 |
Sengupta DK, Fang W, Malin JI, Li J, Horton T, Curtis AP, Hsieh KC, Chuang SL, Chen H, Feng M, Stillman GE, Li L, Liu HC, Bandara KMSV, Gunapala SD, et al. GaAs/AlGaAs quantum-well infrared photodetectors on GaAs-on-Si substrates Applied Physics Letters. 71: 78-80. DOI: 10.1063/1.119473 |
0.6 |
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| 1997 |
Sengupta DK, Horton T, Fang W, Curtis A, Li J, Chuang SL, Chen H, Feng M, Stillman GE, Kar A, Mazumder J, Li L, Liu HC. Redshifting of a bound-to-continuum GaAs/AlGaAs quantum-well infrared photodetector response via laser annealing Applied Physics Letters. 70: 3573-3575. DOI: 10.1063/1.119237 |
0.618 |
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| 1997 |
Sengupta D, Fang W, Malin J, Curtis A, Horton T, Kuo H, Turnbull D, Lin C, Li J, Hsieh K, Chuang S, Adesida I, Feng M, Bishop S, Stillman G, et al. Effects of Rapid Thermal Annealing on the Device Characteristics of Quantum Well Infrared Photodetectors Journal of Electronic Materials. 26: 43-51. DOI: 10.1007/S11664-997-0132-6 |
0.608 |
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| 1997 |
Sengupta DK, Jackson SL, Curtis AP, Fang W, Malin JI, Horton TU, Kuo HC, Moy A, Miller J, Hsieh KC, Cheng KY, Chen H, Adesida I, Chuang SL, Feng M, et al. Growth and characterization of InGaAs/InP p-quantum-well infrared photodetectors with extremely thin quantum wells Journal of Electronic Materials. 26: 1382-1388. DOI: 10.1007/S11664-997-0055-2 |
0.595 |
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| 1997 |
Sengupta DK, Jackson SL, Curtis AP, Fang W, Malin JI, Horton TU, Hartman Q, Kuo HC, Thomas S, Miller J, Hsieh KC, Adesida I, Chuang SL, Feng M, Stillman GE, et al. Growth and characterization of n-type InP/InGaAs quantum well infrared photodetectors for response at 8.93 µm Journal of Electronic Materials. 26: 1376-1381. DOI: 10.1007/S11664-997-0054-3 |
0.597 |
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| 1996 |
Sengupta DK, Kim S, Horton T, Kuo HC, Thomas S, Jackson SL, Curtis AP, Bishop SG, Feng M, Stillman GE, Chang YC, Liu HC. Growth and Characterization of Interfaces in P-Type InGaAs/InP Quantum-Well Infrared Photodetectors with Ultra-Thin Quantum Wells Mrs Proceedings. 450. DOI: 10.1557/Proc-450-225 |
0.59 |
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| 1996 |
Sengupta D, Fang W, Malin J, Kuo H, Horton T, Curtis A, Gardner N, Flachsbart B, Wohlmuth W, Turnbull D, Chuang S, Hsieh KC, Cheng K, Adesida I, Feng M, et al. Long Wavelength Shifting and Broadening of Quantum Well Infrared Photodetector Response Via Rapid Thermal Annealing Mrs Proceedings. 421. DOI: 10.1557/Proc-421-355 |
0.36 |
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| 1996 |
Sengupta DK, Malin JL, Jackson SI, Fang W, Wu W, Kuo HC, Rowe C, Chuang SL, Hsieh KC, Tucker JR, Lyding JW, Feng M, Stillman GE, Liu HC. Comparison of n- and p-type InGaAs/InP quantum well infrared photodetectors Mrs Proceedings. 421: 203-208. DOI: 10.1557/Proc-421-203 |
0.563 |
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| 1996 |
Ahmari DA, Fresina MT, Hartmann QJ, Barlage DW, Mares PJ, Feng M, Stillman GE. High-speed InGaP/GaAs HBTs with a strained In/sub x/Ga/sub 1-x/As base Ieee Electron Device Letters. 17: 226-228. DOI: 10.1109/55.491837 |
0.613 |
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| 1996 |
Kruse J, Mares PJ, Scherrer D, Feng M, Stillman GE. Temperature dependent study of carbon-doped InP/InGaAs HBT's Ieee Electron Device Letters. 17: 10-12. DOI: 10.1109/55.475561 |
0.605 |
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| 1996 |
Shih C, Chang W, Wang J, Barlage DW, Teng C, Feng M. Design and fabrication of a 1 Gb/s OEIC receiver for fiber-optic data link applications Journal of Lightwave Technology. 14: 1480-1487. DOI: 10.1109/50.511677 |
0.376 |
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| 1996 |
Feng M, Gao F, Zhou Z, Kruse J, Heins M, Wang J, Remillard S, Lithgow R, Scharen M, Cardona A, Forse R. High temperature superconducting resonators and switches: design, fabrication, and characterization Ieee Transactions On Microwave Theory and Techniques. 44: 1347-1355. DOI: 10.1109/22.508239 |
0.306 |
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| 1996 |
Feng M, Scherrer DR, Apostolakis PJ, Kruse JW. Temperature dependent study of the microwave performance of 0.25-/spl mu/m gate GaAs MESFETs and GaAs pseudomorphic HEMTs Ieee Transactions On Electron Devices. 43: 852-860. DOI: 10.1109/16.502115 |
0.388 |
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| 1996 |
Malin JI, Liu P, Sengupta DK, Fang WC, Chuang SL, Feng M, Stillman GE, Hsieh KC. Red shifting the intersubband response of quantum‐well infrared photodetectors by thermal annealing Journal of Applied Physics. 80: 4737-4740. DOI: 10.1063/1.363456 |
0.589 |
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| 1996 |
Sengupta DK, Jackson SL, Ahmari D, Kuo H, Malin JI, Thomas S, Feng M, Stillman GE, Chang YC, Li L, Liu HC. p‐type InGaAs/InP quantum well infrared photodetector with peak response at 4.55 μm Applied Physics Letters. 69: 3209-3211. DOI: 10.1063/1.117963 |
0.607 |
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| 1996 |
Scherrer D, Apostolakis P, Middleton J, Mares PJ, Kruse J, Feng M. Noise and gain comparison of 0.25 μm gate MESFETs and PHEMTs for low power wireless communication circuits Solid-State Electronics. 39: 431-437. DOI: 10.1016/0038-1101(95)00170-0 |
0.372 |
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| 1996 |
Fresina MT, Ahmari DA, Thomas S, Barlage DW, Martino CA, Feng M, Stillman GE. High-speed InP/InGaAs heterojunction bipolar transistor utilizing nonalloyed contact on n + -InP contacting layers Journal of Electronic Materials. 25: 1637-1639. DOI: 10.1007/Bf02655589 |
0.62 |
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| 1995 |
Feng M, Scherrer DR, Apostolakis PJ, Middleton JR, McPartlin MJ, Lautenvasser BD, Oliver JD. Ka-band monolithic low-noise amplifier using direct ion-implanted GaAs MESFETs Ieee Microwave and Guided Wave Letters. 5: 156-158. DOI: 10.1109/75.374083 |
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| 1995 |
Fresina MT, Ahmari DA, Mares PJ, Hartmann QJ, Feng M, Stillman GE. High-speed, low-noise InGaP/GaAs heterojunction bipolar transistors Ieee Electron Device Letters. 16: 540-541. DOI: 10.1109/55.475580 |
0.621 |
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| 1995 |
Feng M, Scherrer D, Kruse J, Apostolakis PJ, Middleton JR. Temperature dependence study of two-dimensional electron gas effect on the noise performance of high frequency field effect transistors Ieee Electron Device Letters. 16: 139-141. DOI: 10.1109/55.372494 |
0.36 |
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| 1994 |
Apostolakis PJ, Middleton JR, Scherrer D, Feng M, Lepore AN. Noise performance of low power 0.25 micron gate ion implanted D-mode GaAs MESFET for wireless applications Ieee Electron Device Letters. 15: 239-241. DOI: 10.1109/55.294082 |
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| 1993 |
Apostolakis PJ, Middleton J, Kruse J, Scherrer D, Barlage D, Feng M, Lepore AN. Microwave performance of low-power ion-implanted 0.25-micron gate GaAs MESFET for low-cost MMIC's applications Ieee Microwave and Guided Wave Letters. 3: 278-280. DOI: 10.1109/75.242215 |
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|
| 1993 |
Wang JS, Shih CG, Chang WH, Middleton JR, Apostolakis PJ, Feng M. 11 GHz bandwidth optical integrated receivers using GaAs MESFET and MSM technology Ieee Photonics Technology Letters. 5: 316-318. DOI: 10.1109/68.205623 |
0.374 |
|
| 1993 |
Scherrer D, Kruse J, Laskar J, Feng M, Wada M, Takano C, Kasahara J. Low-power performance of 0.5- mu m JFET for low-cost MMIC's in personal communications Ieee Electron Device Letters. 14: 428-430. DOI: 10.1109/55.244717 |
0.375 |
|
| 1993 |
Laskar J, Feng M, Kruse J. Temperature-dependent bit-error-rate characterization of ultralow-noise GaAs MESFET's for 3-Gb/s operation Ieee Electron Device Letters. 14: 57-59. DOI: 10.1109/55.215107 |
0.374 |
|
| 1993 |
Feng M, Laskar J. On the Speed and Noise Performance of Direct Ion-Implanted GaAs MESFET’s Ieee Transactions On Electron Devices. 40: 9-17. DOI: 10.1109/16.249417 |
0.39 |
|
| 1992 |
Laskar J, Kruse J, Feng M. Cryogenic small-signal model for 0.55 mu m gate-length ion-implanted GaAs MESFET's Ieee Microwave and Guided Wave Letters. 2: 242-244. DOI: 10.1109/75.136519 |
0.358 |
|
| 1992 |
Feng M, Lau CL, Brusenback P, Kushner LJ. Millimeter-wave power performance of ion-implanted In/sub x/Ga/sub (1-x)/As on GaAs metal semiconductor field-effect transistors Ieee Microwave and Guided Wave Letters. 2: 225-227. DOI: 10.1109/75.136513 |
0.347 |
|
| 1992 |
Feng M, Laskar J, Kruse J, Neidhard R. Ultra low-noise performance of 0.15-micron gate GaAs MESFET's made by direct ion implantation for low-cost MMIC's applications Ieee Microwave and Guided Wave Letters. 2: 194-195. DOI: 10.1109/75.134352 |
0.359 |
|
| 1992 |
Hwang T, Feng M. High Drain Current—Voltage Product of Submicrometer-Gate Ion-Implanted GaAs MESFET's for Millimeter-Wave Operation Ieee Electron Device Letters. 13: 445-447. DOI: 10.1109/55.192789 |
0.417 |
|
| 1992 |
Feng M, Laskar J, Kruse J. Super-low-noise performance of direct-ion-implanted 0.25- mu m-gate GaAs MESFET's Ieee Electron Device Letters. 13: 241-243. DOI: 10.1109/55.145040 |
0.338 |
|
| 1992 |
Maranowski S, Laskar J, Feng M, Kolodzey J. Cryogenic Microwave Performance of 0.5-μm InGaAs MESFET's Ieee Electron Device Letters. 13: 64-66. DOI: 10.1109/55.144953 |
0.319 |
|
| 1992 |
Feng M, Lau CL. Ion-Implanted In<inf>(x)</inf>Ga<inf>(1-x)</inf> As MESFET’s on GaAs Substrate for Low-Cost Millimeter-Wave IC Application Ieee Transactions On Electron Devices. 39: 484-493. DOI: 10.1109/16.123467 |
0.334 |
|
| 1991 |
Schellenberg JM, Lau CL, Feng M, Brusenback P. W-band oscillator using ion-implanted InGaAs MESFETs Ieee Microwave and Guided Wave Letters. 1: 100-102. DOI: 10.1109/75.89076 |
0.386 |
|
| 1991 |
Lau CL, Feng M. 60-Ghz Noise Performance of Ion-Implanted Inxga1-Xas Mesfet'S Ieee Electron Device Letters. 12: 244-245. DOI: 10.1109/55.79561 |
0.316 |
|
| 1991 |
Feng M, Lau CL, Eu V. An experimental determination of electron drift velocity in 0.5- mu m gate-length ion-implanted GaAs MESFET's Ieee Electron Device Letters. 12: 40-41. DOI: 10.1109/55.75697 |
0.306 |
|
| 1991 |
Feng M, Lau CL, Ito C. A technique for correction of parasitic capacitance on microwave f/sub t/ measurements of MESFET and HEMT devices Ieee Transactions On Microwave Theory and Techniques. 39: 1880-1882. DOI: 10.1109/22.97490 |
0.342 |
|
| 1991 |
Laskar J, Maranowski S, Caracci S, Feng M, Kolodzey J. Reduced lattice temperature high-speed operation of pseudomorphic InGaAs/GaAs field-effect transistors Applied Physics Letters. 59: 2412-2414. DOI: 10.1063/1.106032 |
0.355 |
|
| 1991 |
Feng M, Laskar J, Miller W, Kolodzey J, Stillman GE, Lau CL. Characterization of ion-implanted InxGa1-xAs/GaAs 0.25 μm gate metal semiconductor field-effect transistors with F t>100 GHz Applied Physics Letters. 58: 2690-2691. DOI: 10.1063/1.104809 |
0.622 |
|
| 1991 |
Hwang T, Feng M, Lau CL. Ka-band monolithic amplifier using 0.5 mu m gate length ion-implanted GaAs/AlGaAs heterojunction FET technology Electronics Letters. 27: 2121-2122. DOI: 10.1049/El:19911314 |
0.382 |
|
| 1991 |
Hwang T, Feng M, Lau CL. High DC and microwave characteristics of subhalf-micrometre gate ion-implanted GaAs MESFETs using trilayer deep UV lithography Electronics Letters. 27: 929-931. DOI: 10.1049/El:19910581 |
0.419 |
|
| 1990 |
Feng M, Lau CL, Lepkowski TR, Brusenback P, Schellenberg JM. 60-GHz power performance of ion-implanted In/sub x/Ga/sub (1-x/)As/GaAs MESFETs Ieee Electron Device Letters. 11: 496-498. DOI: 10.1109/55.63031 |
0.333 |
|
| 1990 |
Feng M, Lau CL, Eu V, Ito C. Does the two-dimensional electron gas effect contribute to high-frequency and high-speed performance of field-effect transistors? Applied Physics Letters. 57: 1233-1235. DOI: 10.1063/1.103494 |
0.336 |
|
| 1990 |
Pan N, Carter J, Zheng XL, Hendriks H, Hoke WE, Feng MS, Hsieh KC. Growth of pseudomorphic high electron mobility heterostructures by atmospheric pressure metalorganic chemical vapor deposition Applied Physics Letters. 56: 274-276. DOI: 10.1063/1.102806 |
0.332 |
|
| 1990 |
Wang GW, Feng M, Kaliski R, Kuang JB. Submicron-gate ion-implanted In0.15Ga0.85As/GaAs MESFETs with graded indium composition Electronics Letters. 26: 190-191. DOI: 10.1049/El:19900128 |
0.39 |
|
| 1989 |
Wang GW, Feng M, Kaliski R, Liaw YP, Lau C, Ito C. Millimeter-wave ion-implanted graded In/sub x/Ga/sub 1-x/As MESFETs grown by MOCVD Ieee Electron Device Letters. 10: 449-451. DOI: 10.1109/55.43096 |
0.329 |
|
| 1989 |
Lau CL, Feng M, Lepkowski TR, Wang GW, Chang Y, Ito C. Half-micrometer gate-length ion-implanted GaAs MESFET with 0.8-dB noise figure at 16 GHz Ieee Electron Device Letters. 10: 409-411. DOI: 10.1109/55.34725 |
0.342 |
|
| 1989 |
Wang GW, Feng M, Lau CL, Ito C, Lepkowski TR. High-performance millimeter-wave ion-implanted GaAs MESFETs Ieee Electron Device Letters. 10: 95-97. DOI: 10.1109/55.32440 |
0.395 |
|
| 1989 |
Wang GW, Feng M. Quarter-Micrometer Gate Ion-Implanted GaAs MESFET’s with an ftof 126 GHz Ieee Electron Device Letters. 10: 386-388. DOI: 10.1109/55.31765 |
0.414 |
|
| 1989 |
Wang GW, Feng M, Liaw YP, Kaliski R, Lau CL, Ito C. Ion-implanted GaAs/AlGaAs heterojunction FET's grown by MOCVD Ieee Electron Device Letters. 10: 264-266. DOI: 10.1109/55.31741 |
0.386 |
|
| 1989 |
Wang GW, Feng M, Lau CL, Ito C, Lepkowski TR. Ultrahigh-frequency performance of submicrometer-gate ion-implanted GaAs MESFETs Ieee Electron Device Letters. 10: 206-208. DOI: 10.1109/55.31722 |
0.41 |
|
| 1989 |
Wang GW, Feng M, Lau CL, Ito C, Lepkowski TR. 0.25- mu m gate millimeter-wave ion-implanted GaAs MESFETs Ieee Electron Device Letters. 10: 186-188. DOI: 10.1109/55.31715 |
0.399 |
|
| 1989 |
Wang GW, Feng M, Liaw YP, Kaliski R, Lau CL, Chang Y, Ito C. Heterojunction ion-implanted FETs (HIFETs) Ieee Transactions On Electron Devices. 36: 2609. DOI: 10.1109/16.43715 |
0.373 |
|
| 1989 |
Wang GW, Ito C, Feng M, Kaliski R, McIntyre D, Lau C, Eu VK. Heteroepitaxial In0.1Ga0.9As metal‐semiconductor field‐effect transistors fabricated on GaAs and Si substrates Applied Physics Letters. 55: 1552-1554. DOI: 10.1063/1.102241 |
0.383 |
|
| 1989 |
Feng M, Wang GW, Liaw YP, Kaliski RW, Lau CL, Ito C. Ion-implanted In0.1Ga0.9As metal-semiconductor field-effect transistors on GaAs (100) substrates Applied Physics Letters. 55: 568-569. DOI: 10.1063/1.101834 |
0.398 |
|
| 1989 |
Hsieh KC, Feng MS, Stillman GE, Holonyak N, Ito CR, Feng M. Hydrogenation and subsequent hydrogen annealing of GaAs on Si Applied Physics Letters. 54: 341-343. DOI: 10.1063/1.100963 |
0.567 |
|
| 1989 |
Wang GW, Feng M, Liaw YP, Kaliski R, Chang Y, Lau CL, Ito C. Enhanced Microwave Performance of Ion-Implanted Mesfet With Graded Gaas/AlgaAs Heterojunctions Electronics Letters. 25: 1105-1106. DOI: 10.1049/El:19890741 |
0.397 |
|
| 1989 |
Wang GW, Feng M, Liaw YP, Kaliski R, Lau CL, Ito C. Modification of transconductance characteristics for ion-implanted GaAs/AlGaAs heterojunction MESFETs Electronics Letters. 25: 713-715. DOI: 10.1049/El:19890483 |
0.403 |
|
| 1989 |
Pan N, Kim MH, Feng M, Stillman GE. Growth of high purity InGaAs using different indium sources Journal of Crystal Growth. 94: 829-833. DOI: 10.1016/0022-0248(89)90115-2 |
0.56 |
|
| 1988 |
Hsieh K, Feng M, Stillman G, Ito C, McIntyre D, Kaliski R, Feng M. Effect of Substrate Misorientation on the Structual Strain and Defect Distribution of Mocvd Grown GaAs on Si Mrs Proceedings. 116. DOI: 10.1557/Proc-116-261 |
0.556 |
|
| 1988 |
Ito C, McIntyre D, White T, Feng M, Schoendube R, Kaliski R, Kim HB. Full functionality of LSI gate arrays fabricated on 3-in-diameter, MOCVD-grown GaAs-on-silicon substrates Ieee Electron Device Letters. 9: 371-373. DOI: 10.1109/55.747 |
0.391 |
|
| 1987 |
Jackson GS, Pan N, Feng M, Stillman GE, Holonyak N, Burnham RD. Stripe‐geometry AlxGa1−xAs‐GaAs quantum well lasers via hydrogenation Applied Physics Letters. 51: 1629-1631. DOI: 10.1063/1.98577 |
0.61 |
|
| 1987 |
Pan N, Bose SS, Kim MH, Stillman GE, Chambers F, Devane G, Ito CR, Feng M. Hydrogen passivation of C acceptors in high-purity GaAs Applied Physics Letters. 51: 596-598. DOI: 10.1063/1.98358 |
0.547 |
|
| 1985 |
Gavrilovic P, Meehan K, Guido LJ, Holonyak N, Eu V, Feng M, Burnham RD. Si-implanted and disordered stripe-geometry AlxGa 1-xAs-GaAs quantum well lasers Applied Physics Letters. 47: 903-905. DOI: 10.1063/1.95973 |
0.333 |
|
| 1984 |
Feng M, Eu VK, Zielinski T, Kanber H, Henderson WB. GaAs MESFET's made by ion implantation into MOCVD Buffer layers Ieee Electron Device Letters. 5: 18-20. DOI: 10.1109/Edl.1984.25816 |
0.358 |
|
| 1982 |
Feng M, Kanber H, Eu VK, Siracusa M. High-efficiency GaAs power MESFETs prepared by ion implantation Electronics Letters. 18: 1097-1099. DOI: 10.1049/El:19820749 |
0.362 |
|
| 1982 |
Feng M, Eu VK, Siracusa M, Watkins E, Kimura H, Winston H. Silicon implanted super low-noise GaAs MESFET Electronics Letters. 18: 21-23. DOI: 10.1049/El:19820016 |
0.338 |
|
| 1982 |
Feng M, Eu VK, Zielinski T, Whelan JM. Growth and characterization of Si doped vapor phase epitaxial GaAs for mesfet Journal of Electronic Materials. 11: 663-688. DOI: 10.1007/Bf02672390 |
0.351 |
|
| 1981 |
Feng M, Eu V, Zielinski T, Kim HB, Whelan JM. Si‐doped GaAs by SiCl4‐AsCl3 liquid solution in AsCl3/GaAs‐Ga/H2 chemical vapor deposition system Applied Physics Letters. 38: 688-690. DOI: 10.1063/1.92480 |
0.334 |
|
| 1980 |
Cook LW, Feng M, Tashima MM, Blattner RJ, Stillman GE. Interface grading in InGaAsP liquid phase epitaxial heterostructures Applied Physics Letters. 37: 173-175. DOI: 10.1063/1.91813 |
0.559 |
|
| 1980 |
Feng M, Cook LW, Tashima MM, Stillman GE. Lattice constant, bandgap, thickness, and surface morphology of InGaAsP-InP layers grown by step-cooling, equilibrium-cooling, supercooling and two-phase-solution growth techniques Journal of Electronic Materials. 9: 241-280. DOI: 10.1007/Bf02670849 |
0.549 |
|
| 1979 |
Cook LW, Feng M, Tashima MM, Stillman GE, Blattner RJ. TP-C8 auger profile study of the LPE InGaAsP-InP-InGaAsP and InGaAs-InP heterojunction interface Ieee Transactions On Electron Devices. 26: 1844-1844. DOI: 10.1109/T-Ed.1979.19745 |
0.557 |
|
| 1979 |
Feng M, Oberstar JD, Windhorn TH, Cook LW, Stillman GE, Streetman BG. Be‐implanted 1.3‐μm InGaAsP avalanche photodetectors Applied Physics Letters. 34: 591-593. DOI: 10.1063/1.90885 |
0.616 |
|
| 1979 |
Feng M, Cook LW, Tashima MM, Windhorn TH, Stillman GE. The influence of LPE growth techniques on the alloy composition of InGaAsP Applied Physics Letters. 34: 292-295. DOI: 10.1063/1.90764 |
0.536 |
|
| 1979 |
Feng M, Cook LW, Tashima MM, Stillman GE, Blattner RJ. Auger profile study of the influence of lattice mismatch on the LPE InGaAsP-InP heterojunction interface Applied Physics Letters. 34: 697-699. DOI: 10.1063/1.90609 |
0.552 |
|
| 1979 |
Feng M, Tashima MM, Cook LW, Milano RA, Stillman GE. The influence of growth-solution dopants on distribution coefficients in the LPE growth of InGaAsP Applied Physics Letters. 34: 91-93. DOI: 10.1063/1.90571 |
0.533 |
|
| 1978 |
Feng M, Tashima MM, Windhorn TH, Stillman GE. Composition dependence of the influence of lattice mismatch on surface morphology in LPE growth of InGaAsP on (100) ‐InP Applied Physics Letters. 33: 533-536. DOI: 10.1063/1.90427 |
0.525 |
|
| 1978 |
Feng M, Windhorn TH, Tashima MM, Stillman GE. Liquid‐phase epitaxial growth of lattice‐matched InGaAsP on (100)‐InP for the 1.15–1.31‐μm spectral region Applied Physics Letters. 32: 758-761. DOI: 10.1063/1.89920 |
0.56 |
|
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