| Year |
Citation |
Score |
| 1998 |
Ross FM, Tersoff J, Reuter M, Legoues FK, Tromp RM. In situ transmission electron microscopy observations of the formation of self-assembled Ge islands on Si. Microscopy Research and Technique. 42: 281-94. PMID 9779833 DOI: 10.1002/(Sici)1097-0029(19980915)42:4<281::Aid-Jemt7>3.0.Co;2-T |
0.433 |
|
| 1998 |
Stach EA, Hull R, Tromp RM, Reuter MC, Copel M, LeGoues FK, Bean JC. Effect of the surface upon misfit dislocation velocities during the growth and annealing of SiGe/Si (001) heterostructures Journal of Applied Physics. 83: 1931-1937. DOI: 10.1063/1.366984 |
0.445 |
|
| 1997 |
Mooney PM, Tilly L, D’Emic CP, Chu JO, Cardone F, LeGoues FK, Meyerson BS. Defect states in strain-relaxed Si0.7Ge0.3 layers grown at low temperature Journal of Applied Physics. 82: 688-695. DOI: 10.1063/1.365599 |
0.5 |
|
| 1996 |
Jordan‐Sweet JL, Mooney PM, Lutz MA, Feenstra RM, Chu JO, LeGoues FK. Unique X-Ray Diffraction Pattern At Grazing Incidence From Misfit Dislocations In Sige Thin Films Journal of Applied Physics. 80: 89-96. DOI: 10.1063/1.362776 |
0.341 |
|
| 1996 |
Hammar M, LeGoues FK, Tersoff J, Reuter MC, Tromp RM. In situ ultrahigh vacuum transmission electron microscopy studies of hetero-epitaxial growth I. {Si(001) }/{Ge} Surface Science. 349: 129-144. DOI: 10.1016/0039-6028(95)01068-8 |
0.43 |
|
| 1996 |
LeGoues FK, Hammar M, Reuter MC, Tromp RM. In situ TEM study of the growth of Ge on Si(111) Surface Science. 349: 249-266. DOI: 10.1016/0039-6028(95)00900-0 |
0.486 |
|
| 1995 |
Tromp RM, LeGoues FK, Reuter MC. Strain Relief during Growth: CaF2 on Si(111). Physical Review Letters. 74: 2706-2709. PMID 10057997 DOI: 10.1103/PhysRevLett.74.2706 |
0.359 |
|
| 1995 |
Feenstra RM, Lutz MA, Stern F, Ismail K, Mooney PM, LeGoues FK, Stanis C, Chu JO, Meyerson BS. Roughness analysis of Si/SiGe heterostructures Journal of Vacuum Science & Technology B. 13: 1608-1612. DOI: 10.1116/1.587865 |
0.436 |
|
| 1995 |
Lutz MA, Feenstra RM, LeGoues FK, Mooney PM, Chu JO. Addendum: ‘‘Influence of misfit dislocations on the surface morphology of Si1−xGex films’’ [Appl. Phys. Lett. 66, 724 (1995)] Applied Physics Letters. 67: 724-724. DOI: 10.1063/1.115287 |
0.309 |
|
| 1995 |
LeGoues FK, Tersoff J, Reuter MC, Hammar M, Tromp R. Relaxation mechanism of Ge islands/Si(001) at low temperature Applied Physics Letters. 67: 2317-2319. DOI: 10.1063/1.115138 |
0.51 |
|
| 1995 |
Mooney PM, Jordan‐Sweet JL, Ismail K, Chu JO, Feenstra RM, LeGoues FK. Relaxed Si0.7Ge0.3 buffer layers for high‐mobility devices Applied Physics Letters. 67: 2373-2375. DOI: 10.1063/1.114349 |
0.507 |
|
| 1995 |
Lutz MA, Feenstra RM, LeGoues FK, Mooney PM, Chu JO. Influence of misfit dislocations on the surface morphology of Si1−xGex films Applied Physics Letters. 66: 724-726. DOI: 10.1063/1.114112 |
0.365 |
|
| 1994 |
Tersoff J, LeGoues FK. Competing relaxation mechanisms in strained layers. Physical Review Letters. 72: 3570-3573. PMID 10056233 DOI: 10.1103/Physrevlett.72.3570 |
0.372 |
|
| 1994 |
Mooney PM, LeGoues FK, Tersoff J, Chu JO. Nucleation of dislocations in SiGe layers grown on (001)Si Journal of Applied Physics. 75: 3968-3977. DOI: 10.1063/1.356992 |
0.48 |
|
| 1994 |
Legoues FK, Powell A, Iyer SS. Relaxation of SiGe thin films grown on Si/SiO2 substrates Journal of Applied Physics. 75: 7240-7246. DOI: 10.1063/1.356682 |
0.553 |
|
| 1994 |
Mooney PM, LeGoues FK, Jordan‐Sweet JL. Dislocation nucleation barrier in SiGe/Si structures graded to pure Ge Applied Physics Letters. 65: 2845-2847. DOI: 10.1063/1.112511 |
0.531 |
|
| 1994 |
Powell AR, Iyer SS, Legoues FK. New approach to the growth of low dislocation relaxed SiGe material Applied Physics Letters. 64: 1856-1858. DOI: 10.1063/1.111778 |
0.54 |
|
| 1994 |
Eberl K, Iyer SS, Legoues FK. Strain symmetrization effects in pseudomorphic Si1-yC y/Si1-xGex superlattices Applied Physics Letters. 64: 739-741. DOI: 10.1063/1.111051 |
0.543 |
|
| 1993 |
LeGoues FK, Mooney PM, Tersoff J. Measurement of the activation barrier to nucleation of dislocations in thin films. Physical Review Letters. 71: 396-399. PMID 10055260 DOI: 10.1103/Physrevlett.71.396 |
0.384 |
|
| 1993 |
Tromp RM, Denier van der Gon AW, LeGoues FK, Reuter MC. Observation of buried interfaces with low energy electron microscopy. Physical Review Letters. 71: 3299-3302. PMID 10054938 DOI: 10.1103/Physrevlett.71.3299 |
0.323 |
|
| 1993 |
Falta J, Copel M, LeGoues FK, Tromp RM. Medium-energy-ion-scattering investigations of Si and Ge growth on GaAs(001)-c(2 x 8)/(2 x 4). Physical Review. B, Condensed Matter. 47: 9610-9614. PMID 10005028 DOI: 10.1103/Physrevb.47.9610 |
0.501 |
|
| 1993 |
Mooney PM, LeGoues FK, Chu JO. Origin of Mosaic Structure in Relaxed Si1-xGex Layers Materials Science Forum. 483-488. DOI: 10.4028/Www.Scientific.Net/Msf.143-147.483 |
0.487 |
|
| 1993 |
Mooney PM, Legoues FK, Chu JO. Nucleation of Dislocations in SIGe Layers Mrs Proceedings. 319: 147. DOI: 10.1557/Proc-319-147 |
0.389 |
|
| 1993 |
Taylor AP, Stokes K, Wu ZC, Persans PD, Schowalter LJ, LeGoues FK. Nanocrystallites of Si embedded in CaF2 by molecular beam epitaxy (MBE) Materials Research Society Symposium Proceedings. 283: 71-75. DOI: 10.1557/Proc-283-71 |
0.419 |
|
| 1993 |
Legoues FK, Mooney PM, Tersoff J. Erratum: ``Measurement of the activation barrier to nucleation of dislocations in thin films [Phys. Rev. Lett. 71, 396 (1993)] Physical Review Letters. 71: 3234. DOI: 10.1103/Physrevlett.71.3234 |
0.336 |
|
| 1993 |
Falta J, Copel M, LeGoues FK, Tromp RM. Surfactant coverage and epitaxy of Ge on Ga‐terminated Si(111) Applied Physics Letters. 62: 2962-2964. DOI: 10.1063/1.109157 |
0.489 |
|
| 1992 |
Kesan VP, LeGoues FK, Iyer SS. Influence of surface reconstructions and epitaxial-growth conditions on long-range order in Si1-xGex alloys. Physical Review. B, Condensed Matter. 46: 1576-1581. PMID 10003802 DOI: 10.1103/Physrevb.46.1576 |
0.476 |
|
| 1992 |
Tsang JC, Kesan VP, Freeouf JL, LeGoues FK, Iyer SS. Raman spectroscopy of long-range order in epitaxial Si0.5Ge0.5 alloys. Physical Review. B, Condensed Matter. 46: 6907-6914. PMID 10002394 |
0.359 |
|
| 1992 |
Beach DB, Collins RT, Legoues FK, Chu JO. Erbium-Doped Silicon Prepared by UHV/CVD Mrs Proceedings. 282. DOI: 10.1557/Proc-282-397 |
0.406 |
|
| 1992 |
Zollner S, Collins RT, Goorsky MS, Wang PJ, Tejwani MJ, Chu JO, Meyerson BS, LeGoues FK. Photoluminescence from pseudomorphically strained Si/Si 1-x Ge x multiple quantum wells grown on silicon Semiconductors. 1678: 81-88. DOI: 10.1117/12.60443 |
0.606 |
|
| 1992 |
Tsang JC, Kesan VP, Freeouf JL, LeGoues FK, Iyer SS. Raman spectroscopy of long-range order in epitaxial Si0.5Ge0.5 alloys Physical Review B. 46: 6907-6914. DOI: 10.1103/PhysRevB.46.6907 |
0.359 |
|
| 1992 |
Kesan VP, LeGoues FK, Iyer SS. Influence of surface reconstructions and epitaxial-growth conditions on long-range order in Si1-xGex alloys Physical Review B. 46: 1576-1581. DOI: 10.1103/PhysRevB.46.1576 |
0.432 |
|
| 1992 |
LeGoues FK, Meyerson BS, Morar JF, Kirchner PD. Mechanism and conditions for anomalous strain relaxation in graded thin films and superlattices Journal of Applied Physics. 71: 4230-4243. DOI: 10.1063/1.350803 |
0.498 |
|
| 1992 |
LeGoues FK, Ott JA, Eberl K, Iyer SS. In situ study of relaxation of SiGe thin films by the modified Frank-Read mechanism Applied Physics Letters. 61: 174-176. DOI: 10.1063/1.108209 |
0.418 |
|
| 1992 |
Goorsky MS, Iyer SS, Eberl K, Legoues F, Angilello J, Cardone F. Thermal stability of Si1-xCx/Si strained layer superlattices Applied Physics Letters. 60: 2758-2760. DOI: 10.1063/1.106868 |
0.671 |
|
| 1992 |
Legoues FK, Eberl K, Iyer SS. Relaxation by the modified Frank-Read mechanism in compositionally uniform thin films Applied Physics Letters. 60: 2862-2864. DOI: 10.1063/1.106848 |
0.437 |
|
| 1992 |
Eberl K, Iyer SS, Zollner S, Tsang JC, Legoues FK. Growth and strain compensation effects in the ternary Si 1-x-yGexCy alloy system Applied Physics Letters. 60: 3033-3035. DOI: 10.1063/1.106774 |
0.485 |
|
| 1992 |
Iyer SS, Eberl K, Goorsky MS, Legoues FK, Tsang JC, Cardone F. Synthesis of Si1-yCy alloys by molecular beam epitaxy Applied Physics Letters. 60: 356-358. DOI: 10.1063/1.106655 |
0.642 |
|
| 1991 |
Horn-von Hoegen M, LeGoues FK, Copel M, Reuter MC, Tromp RM. Defect self-annihilation in surfactant-mediated epitaxial growth. Physical Review Letters. 67: 1130-1133. PMID 10045083 DOI: 10.1103/Physrevlett.67.1130 |
0.469 |
|
| 1991 |
LeGoues FK, Meyerson BS, Morar JF. Anomalous strain relaxation in SiGe thin films and superlattices. Physical Review Letters. 66: 2903-2906. PMID 10043649 DOI: 10.1103/Physrevlett.66.2903 |
0.33 |
|
| 1991 |
LeGoues FK, Horn-Von Hoegen M, Copel M, Tromp RM. Strain-relief mechanism in surfactant-grown epitaxial germanium films on Si(111). Physical Review. B, Condensed Matter. 44: 12894-12902. PMID 9999469 DOI: 10.1103/Physrevb.44.12894 |
0.492 |
|
| 1991 |
Karam N, Haven V, Ismail K, Legoues F, Carter J, Smith HI. A New Approach for Low Defect Density GaAs On Patterned Si Substrates by Mocvd Mrs Proceedings. 221. DOI: 10.1557/Proc-221-399 |
0.532 |
|
| 1991 |
Iyer SS, Eberl K, Goorsky MS, Legoues FK, Cardone F, Ek BA. The Synthesis and Stability of Si1−yQy Alloys and Strained Layer Superlattices Mrs Proceedings. 220. DOI: 10.1557/Proc-220-581 |
0.673 |
|
| 1991 |
Ismail K, Legoues F, Karam NH, Carter J, Smith HI. High‐quality GaAs on sawtooth‐patterned Si substrates Applied Physics Letters. 59: 2418-2420. DOI: 10.1063/1.106034 |
0.529 |
|
| 1991 |
Eugène J, LeGoues FK, Kesan VP, Iyer SS, d’Heurle FM. Diffusion versus oxidation rates in silicon‐germanium alloys Applied Physics Letters. 59: 78-80. DOI: 10.1063/1.105528 |
0.445 |
|
| 1991 |
Wang PJ, Goorsky MS, Meyerson BS, LeGoues FK, Tejwani MJ. Characterization of Si/SiGe strained-layer superlattices grown by ultrahigh vacuum/chemical vapor deposition technique Applied Physics Letters. 59: 814-816. DOI: 10.1063/1.105352 |
0.656 |
|
| 1990 |
LeGoues FK, Kesan VP, Iyer SS. Long-range order in thick, unstrained Si0.5Ge0.5 epitaxial layers. Physical Review Letters. 64: 40-43. PMID 10041268 DOI: 10.1103/PhysRevLett.64.40 |
0.406 |
|
| 1990 |
LeGoues FK, Copel M, Tromp RM. Microstructure and strain relief of Ge films grown layer by layer on Si(001). Physical Review. B, Condensed Matter. 42: 11690-11700. PMID 9995473 DOI: 10.1103/Physrevb.42.11690 |
0.52 |
|
| 1990 |
Beach DB, Kane WF, Legoues FK, Knors CJ. Chemical Vapor Deposition of Copper from an Organometallic Source Mrs Proceedings. 181: 73. DOI: 10.1557/Proc-181-73 |
0.391 |
|
| 1990 |
LeGoues FK, Kesan VP, Iyer SS. Long-range order in thick, unstrained Si0.5Ge0.5 epitaxial layers Physical Review Letters. 64: 40-43. DOI: 10.1103/PhysRevLett.64.40 |
0.363 |
|
| 1989 |
LeGoues FK, Copel M, Tromp R. Novel strain-induced defect in thin molecular-beam epitaxy layers. Physical Review Letters. 63: 1826-1829. PMID 10040683 DOI: 10.1103/Physrevlett.63.1826 |
0.483 |
|
| 1989 |
Liu JC, Marwick AD, Legoues FK. Hydrogen Segregation at the Al/Si Interface Studied Using a Nuclear Resonant Reaction Mrs Proceedings. 163: 437. DOI: 10.1557/Proc-163-437 |
0.391 |
|
| 1989 |
Wang PJ, Meyerson BS, Fahey PM, LeGoues F, Scilla GJ, Cotte JM. Thermal Stability of Si/Si 0.85 Ge 0.15 /Si Modulation Doped Double Heterostructures Mrs Proceedings. 160: 89. DOI: 10.1557/Proc-160-89 |
0.479 |
|
| 1989 |
Tromp RM, Krakow W, LeGoues FK. Structure Determination of the Si(111)-CaF 2 Interface Mrs Proceedings. 139: 141. DOI: 10.1557/Proc-139-141 |
0.468 |
|
| 1989 |
Beach DB, Blum SE, LeGoues FK. Chemical vapor deposition of aluminum from trimethylamine‐alane Journal of Vacuum Science and Technology. 7: 3117-3118. DOI: 10.1116/1.576322 |
0.32 |
|
| 1989 |
Tromp RM, Reuter MC, LeGoues FK, Krakow W. Structure of the Si(111)/CaF2 interface Journal of Vacuum Science and Technology. 7: 1910-1913. DOI: 10.1116/1.576027 |
0.435 |
|
| 1989 |
LeGoues FK, Rosenberg R, Meyerson BS. Kinetics and mechanism of oxidation of SiGe: dry versus wet oxidation Applied Physics Letters. 54: 644-646. DOI: 10.1063/1.100905 |
0.362 |
|
| 1989 |
LeGoues FK, Rosenberg R, Meyerson BS. Dopant redistribution during oxidation of SiGe Applied Physics Letters. 54: 751-753. DOI: 10.1063/1.100882 |
0.489 |
|
| 1988 |
Tromp RM, LeGoues FK, Krakow W, Schowalter LJ. Structural characterization of the Si(111)-CaF2 interface by high-resolution transmission electron microscopy. Physical Review Letters. 61: 2274. PMID 10039034 DOI: 10.1103/Physrevlett.61.2274 |
0.451 |
|
| 1988 |
Thomas O, Gas P, d’Heurle FM, LeGoues FK, Michel A, Scilla G. Diffusion of boron, phosphorus, and arsenic implanted in thin films of cobalt disilicide Journal of Vacuum Science and Technology. 6: 1736-1739. DOI: 10.1116/1.575282 |
0.378 |
|
| 1988 |
LeGoues FK, Silverman BD, Ho PS. The microstructure of metal–polyimide interfaces Journal of Vacuum Science and Technology. 6: 2200-2204. DOI: 10.1116/1.575011 |
0.399 |
|
| 1988 |
Thomas O, Gas P, Charai A, LeGoues FK, Michel A, Scilla G, d’Heurle FM. The diffusion of elements implanted in films of cobalt disilicide Journal of Applied Physics. 64: 2973-2980. DOI: 10.1063/1.341560 |
0.343 |
|
| 1988 |
Gas P, Scilla G, Michel A, LeGoues FK, Thomas O, d’Heurle FM. Diffusion of Sb, Ga, Ge, and (As) in TiSi2 Journal of Applied Physics. 63: 5335-5345. DOI: 10.1063/1.340399 |
0.366 |
|
| 1988 |
Meyerson BS, Uram KJ, LeGoues FK. Cooperative growth phenomena in silicon/germanium low-temperature epitaxy Applied Physics Letters. 53: 2555-2557. DOI: 10.1063/1.100206 |
0.54 |
|
| 1987 |
Chaudhari P, Collins RT, Freitas P, Gambino RJ, Kirtley JR, Koch RH, Laibowitz RB, LeGoues FK, McGuire TR, Penney T, Schlesinger Z, Segmüller AP, Foner S, McNiff EJ. Properties of epitaxial films of YBa2Cu3O7- delta. Physical Review. B, Condensed Matter. 36: 8903-8906. PMID 9942742 DOI: 10.1103/Physrevb.36.8903 |
0.318 |
|
| 1987 |
Madakson P, Clark GJ, Legoues FK, d'Heurle FM, Baglin JEE. Formation of Buried Tisi 2 Layers in Single Crystal Silicon by Ion Implantion Mrs Proceedings. 107. DOI: 10.1557/Proc-107-281 |
0.342 |
|
| 1987 |
LeGoues FK, Rosenberg R, Nguyen T, Meyerson BS. The Mechanism of Oxidation of SiGe. Mrs Proceedings. 105: 313. DOI: 10.1557/Proc-105-313 |
0.457 |
|
| 1987 |
Clark GJ, LeGoues FK, Marwick AD, Laibowitz RB, Koch R. Ion beam amorphization of YBa2Cu3Ox Applied Physics Letters. 51: 1462-1464. DOI: 10.1063/1.98658 |
0.381 |
|
| 1987 |
Gas P, Tardy J, LeGoues F, d’Heurle FM. Electrical measurement of the formation of the platinum‐rich metal silicides by metal‐silicon reaction Applied Physics Letters. 50: 1135-1137. DOI: 10.1063/1.97940 |
0.421 |
|
| 1986 |
Liehr M, Lefakis H, LeGoues FK, Rubloff GW. Influence of thin SiO2 interlayers on chemical reaction and microstructure at the Ni/Si(111) interface. Physical Review. B, Condensed Matter. 33: 5517-5525. PMID 9939058 DOI: 10.1103/Physrevb.33.5517 |
0.462 |
|
| 1986 |
Taylor RC, Scott BA, Lin S-, LeGoues F, Tsang JC. Chemical Vapor Deposition of Silicon Films Using Hexachlorodisilane Mrs Proceedings. 77: 709. DOI: 10.1557/Proc-77-709 |
0.44 |
|
| 1986 |
Liehr M, Schmid PE, LeGoues FK, Ho PS. Schottky barrier heights of epitaxial Ni-silicides on Si(111) Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 4: 855-859. DOI: 10.1116/1.573795 |
0.467 |
|
| 1986 |
Rubloff GW, Tromp RM, Loenen EJv, Balk P, LeGoues FK. Summary Abstract: High temperature decomposition of SiO2 at the Si/SiO2 interface Journal of Vacuum Science and Technology. 4: 1024-1025. DOI: 10.1116/1.573446 |
0.492 |
|
| 1986 |
Liehr M, Lefakis H, LeGoues FK, Rubloff GW. Influence of thin SiO2 interlayers on chemical reaction and microstructure at the Ni/Si(111) interface Physical Review B. 33: 5517-5525. DOI: 10.1103/PhysRevB.33.5517 |
0.435 |
|
| 1986 |
Gas P, d’Heurle FM, LeGoues FK, Placa SJL. Formation of intermediate phases, Ni3Si2 and Pt6SI5: nucleation, identification, and resistivity Journal of Applied Physics. 59: 3458-3466. DOI: 10.1063/1.336815 |
0.374 |
|
| 1986 |
Ho PS, Liehr M, Schmid PE, Legoues FK, Yang ES, Evans HL, Wu X. Schottky barrier, electronic states and microstructure at Ni silicide-silicon interfaces Surface Science. 168: 184-192. DOI: 10.1016/0039-6028(86)90849-6 |
0.426 |
|
| 1985 |
Tromp R, Rubloff GW, Balk P, LeGoues FK, van Loenen EJ. High-temperature SiO2 decomposition at the SiO2/Si interface. Physical Review Letters. 55: 2332-2335. PMID 10032113 DOI: 10.1103/Physrevlett.55.2332 |
0.493 |
|
| 1985 |
Liehr M, Schmid PE, LeGoues FK, Ho PS. Correlation of Schottky-barrier height and microstructure in the epitaxial Ni silicide on Si(111). Physical Review Letters. 54: 2139-2142. PMID 10031239 DOI: 10.1103/Physrevlett.54.2139 |
0.489 |
|
| 1985 |
Schmid PE, Liehr M, Legoues FK, Ho PS. Schottky Barrier and Electronic States at Silicide-Silicon Interfaces Mrs Proceedings. 54: 469. DOI: 10.1557/Proc-54-469 |
0.384 |
|
| 1985 |
Hahn PO, Rubloff GW, Bartha JW, Legoues F, Tromp R, Ho PS. CHEMICAL INTERACTIONS AT METAL-POLYMER INTERFACES Materials Research Society Symposia Proceedings. 40: 251-263. DOI: 10.1557/Proc-40-251 |
0.309 |
|
| 1985 |
Liehr M, Schmid PE, LeGoues FK, Ho PS. Summary Abstract: Influence of interface quality on the Schottky barrier height in the epitaxial Ni‐silicide/Si(111) system Journal of Vacuum Science & Technology B. 3: 1190-1191. DOI: 10.1116/1.583037 |
0.465 |
|
| 1985 |
Liehr M, LeGoues FK, Rubloff GW, Ho PS. Chemical reactions at Pt/oxide/Si and Ti/oxide/Si interfaces Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 3: 983-986. DOI: 10.1116/1.573371 |
0.487 |
|
| 1985 |
Bartha JW, Hahrt PO, LeGoues F, Ho PS. Photoemission spectroscopy study of aluminum-polyimide interface Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 3: 1390-1393. DOI: 10.1116/1.572786 |
0.343 |
|
| 1985 |
Tromp R, Rubloff GW, Balk P, LeGoues FK, Van Loenen EJ. High-temperature SiO2 decomposition at the SiO2/Si interface Physical Review Letters. 55: 2332-2335. DOI: 10.1103/PhysRevLett.55.2332 |
0.452 |
|
| 1985 |
Liehr M, Schmid PE, LeGoues FK, Ho PS. Correlation of Schottky-barrier height and microstructure in the epitaxial Ni silicide on Si(111) Physical Review Letters. 54: 2139-2142. DOI: 10.1103/PhysRevLett.54.2139 |
0.377 |
|
| 1985 |
Van Loenen EJ, Van Der Veen JF, LeGoues FK. NiSi mixing: A new model for low temperature silicide formation Surface Science. 157: 1-16. DOI: 10.1016/0039-6028(85)90631-4 |
0.516 |
|
| 1985 |
Van Loenen EJ, Fischer AEMJ, Van Der Veen JF, Legoues F. High resolution studies of NiSi2 ultrathin film formation by ion scattering and cross-section tem Surface Science. 154: 52-69. DOI: 10.1016/0039-6028(85)90351-6 |
0.428 |
|
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