Year |
Citation |
Score |
2014 |
Zhang Q, Lu Y, Richter CA, Jena D, Seabaugh A. Optimum bandgap and supply voltage in tunnel FETs Ieee Transactions On Electron Devices. 61: 2719-2724. DOI: 10.1109/Ted.2014.2330805 |
0.676 |
|
2013 |
Xu K, Zeng C, Zhang Q, Yan R, Ye P, Wang K, Seabaugh AC, Xing HG, Suehle JS, Richter CA, Gundlach DJ, Nguyen NV. Direct measurement of Dirac point energy at the graphene/oxide interface. Nano Letters. 13: 131-6. PMID 23244683 DOI: 10.1021/Nl303669W |
0.563 |
|
2013 |
Yan R, Zhang Q, Kirillov OA, Li W, Basham J, Boosalis A, Liang X, Jena D, Richter CA, Seabaugh AC, Gundlach DJ, Xing HG, Nguyen NV. Graphene as transparent electrode for direct observation of hole photoemission from silicon to oxide Applied Physics Letters. 102. DOI: 10.1063/1.4796169 |
0.563 |
|
2013 |
Zhang Q, Li R, Yan R, Kosel T, Xing HG, Seabaugh AC, Xu K, Kirillov OA, Gundlach DJ, Richter CA, Nguyen NV. A unique photoemission method to measure semiconductor heterojunction band offsets Applied Physics Letters. 102. DOI: 10.1063/1.4772979 |
0.555 |
|
2012 |
Zhou G, Lu Y, Li R, Zhang Q, Liu Q, Vasen T, Zhu H, Kuo JM, Kosel T, Wistey M, Fay P, Seabaugh A, Xing H. InGaAs/InP tunnel FETs with a subthreshold swing of 93 mV/dec and I ON/I OFF ratio near 10 6 Ieee Electron Device Letters. 33: 782-784. DOI: 10.1109/Led.2012.2189546 |
0.771 |
|
2012 |
Lu Y, Zhou G, Li R, Liu Q, Zhang Q, Vasen T, Chae SD, Kosel T, Wistey M, Xing H, Seabaugh A, Fay P. Performance of AlGaSb/InAs TFETs with gate electric field and tunneling direction aligned Ieee Electron Device Letters. 33: 655-657. DOI: 10.1109/Led.2012.2186554 |
0.771 |
|
2012 |
Li R, Lu Y, Zhou G, Liu Q, Chae SD, Vasen T, Hwang WS, Zhang Q, Fay P, Kosel T, Wistey M, Xing H, Seabaugh A. AlGaSb/InAs tunnel field-effect transistor with on-current of 78 μaμm at 0.5 v Ieee Electron Device Letters. 33: 363-365. DOI: 10.1109/Led.2011.2179915 |
0.77 |
|
2012 |
Zhou G, Li R, Vasen T, Qi M, Chae S, Lu Y, Zhang Q, Zhu H, Kuo JM, Kosel T, Wistey M, Fay P, Seabaugh A, Xing H. Novel gate-recessed vertical InAs/GaSb TFETs with record high I ON of 180 μa/μm at VDS = 0.5 v Technical Digest - International Electron Devices Meeting, Iedm. 32.6.1-32.6.4. DOI: 10.1109/IEDM.2012.6479154 |
0.66 |
|
2012 |
Jena D, Fang T, Zhang Q, Xing H. Response to "comment on 'Zener tunneling semiconducting nanotubes and graphene nanoribbon p-n junctions'" Applied Physics Letters. 101. DOI: 10.1063/1.4766741 |
0.308 |
|
2012 |
Yan R, Zhang Q, Li W, Calizo I, Shen T, Richter CA, Hight-Walker AR, Liang X, Seabaugh A, Jena D, Grace Xing H, Gundlach DJ, Nguyen NV. Determination of graphene work function and graphene-insulator- semiconductor band alignment by internal photoemission spectroscopy Applied Physics Letters. 101. DOI: 10.1063/1.4734955 |
0.593 |
|
2012 |
Zhang Q, Zhou G, Xing HG, Seabaugh AC, Xu K, Sio H, Kirillov OA, Richter CA, Nguyen NV. Tunnel field-effect transistor heterojunction band alignment by internal photoemission spectroscopy Applied Physics Letters. 100. DOI: 10.1063/1.3692589 |
0.596 |
|
2012 |
Li R, Lu Y, Chae SD, Zhou G, Liu Q, Chen C, Shahriar Rahman M, Vasen T, Zhang Q, Fay P, Kosel T, Wistey M, Xing HG, Koswatta S, Seabaugh A. InAs/AlGaSb heterojunction tunnel field-effect transistor with tunnelling in-line with the gate field Physica Status Solidi (C) Current Topics in Solid State Physics. 9: 389-392. DOI: 10.1002/Pssc.201100241 |
0.789 |
|
2011 |
Seabaugh A, Chae SD, Fay P, Hwang WS, Kosel T, Li R, Liu Q, Lu Y, Vasen T, Wistey M, Xing H, Zhou G, Zhang Q. III-V tunnel field-effect transistors Ecs Transactions. 41: 227-229. DOI: 10.1149/1.3633302 |
0.636 |
|
2011 |
Zhao P, Zhang Q, Jena D, Koswatta SO. Influence of metal-graphene contact on the operation and scalability of graphene field-effect transistors Ieee Transactions On Electron Devices. 58: 3170-3178. DOI: 10.1109/Ted.2011.2159507 |
0.34 |
|
2011 |
Zhou G, Lu Y, Li R, Zhang Q, Hwang WS, Liu Q, Vasen T, Chen C, Zhu H, Kuo JM, Koswatta S, Kosel T, Wistey M, Fay P, Seabaugh A, et al. Vertical InGaAs/InP tunnel FETs with tunneling normal to the gate Ieee Electron Device Letters. 32: 1516-1518. DOI: 10.1109/Led.2011.2164232 |
0.782 |
|
2011 |
Zhang Q, Zhou G, Xing HG, Seabaugh AC, Xu K, Kirillov OA, Richter CA, Nguyen NV. Band alignment of TFET heterojunctions and post deposition annealing effects by internal photoemission spectroscopy 2011 International Semiconductor Device Research Symposium, Isdrs 2011. DOI: 10.1109/ISDRS.2011.6135253 |
0.629 |
|
2010 |
Sutar S, Zhang Q, Seabaugh A. InAlAs/InGaAs interband tunnel diodes for SRAM Ieee Transactions On Electron Devices. 57: 2587-2593. DOI: 10.1109/Ted.2010.2059611 |
0.739 |
|
2010 |
Zhang Q, Lu Y, Xing HG, Koester SJ, Koswatta SO. Scalability of atomic-thin-body (ATB) transistors based on graphene nanoribbons Ieee Electron Device Letters. 31: 531-533. DOI: 10.1109/Led.2010.2045100 |
0.358 |
|
2010 |
Seabaugh AC, Zhang Q. Low-voltage tunnel transistors for beyond CMOS logic Proceedings of the Ieee. 98: 2095-2110. DOI: 10.1109/JPROC.2010.2070470 |
0.657 |
|
2009 |
Wheeler D, Kabeer S, Lu Y, Vasen T, Zhang Q, Zhou G, Clark K, Zhu H, Kao YC, Fay P, Kosel T, Xing H, Seabaugh A. Fabrication approach for lateral InGaAs tunnel transistors 2009 International Semiconductor Device Research Symposium, Isdrs '09. DOI: 10.1109/ISDRS.2009.5378160 |
0.756 |
|
2009 |
Kabeer S, Vasen T, Wheeler D, Zhang Q, Koswatta S, Zhu H, Clark K, Kuo JM, Kao YC, Corcoran S, Doyle B, Fay P, Kosel T, Xing H, Seabaugh A. Effect of dopant profile on current-voltage characteristics of p+n+ In 0.53Ga0.47As tunnel junctions 2009 International Semiconductor Device Research Symposium, Isdrs '09. DOI: 10.1109/ISDRS.2009.5378127 |
0.751 |
|
2009 |
Zhang Q, Sutar S, Kosel T, Seabaugh A. Fully-depleted Ge interband tunnel transistor: Modeling and junction formation Solid-State Electronics. 53: 30-35. DOI: 10.1016/J.Sse.2008.09.010 |
0.776 |
|
2008 |
Zhang Q, Fang T, Xing H, Seabaugh A, Jena D. Graphene nanoribbon tunnel transistors Ieee Electron Device Letters. 29: 1344-1346. DOI: 10.1109/Led.2008.2005650 |
0.638 |
|
2008 |
Zhang Q, Seabaugh A. Can the interband tunnel FET outperform Si CMOS? Device Research Conference - Conference Digest, Drc. 73-74. DOI: 10.1109/DRC.2008.4800740 |
0.548 |
|
2008 |
Sutar S, Zhang Q, Seabaugh A. Structural sensitivity of interband tunnel diodes for SRAM Device Research Conference - Conference Digest, Drc. 65-66. DOI: 10.1109/DRC.2008.4800736 |
0.695 |
|
2008 |
Jena D, Fang T, Zhang Q, Xing H. Zener tunneling in semiconducting nanotube and graphene nanoribbon p−n junctions Applied Physics Letters. 93: 112106. DOI: 10.1063/1.2983744 |
0.383 |
|
2007 |
Zhang Q, Sutar S, Kosel T, Seabaugh A. Rapid melt growth of Ge tunnel junctions for interband tunnel transistors 2007 International Semiconductor Device Research Symposium, Isdrs. DOI: 10.1109/ISDRS.2007.4422291 |
0.727 |
|
2006 |
Zhang Q, Zhao W, Seabaugh A. Low-subthreshold-swing tunnel transistors Ieee Electron Device Letters. 27: 297-300. DOI: 10.1109/Led.2006.871855 |
0.701 |
|
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