Min K. Han, Ph.D. - Publications

Affiliations: 
Hearing and Speech University of Kansas, Lawrence, KS, United States 

135 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2016 Park JM, Kang K, Cho YJ, Hong KS, Lee KB, Hwan Park T, Lee SJ, Ko Y, Han MK, Lee J, Cha JK, Kim DH, Kim DE, Kim JT, Choi JC, et al. Comparative Effectiveness of Pre-stroke Aspirin on Stroke Severity and Outcome. Annals of Neurology. PMID 26754410 DOI: 10.1002/ana.24602  0.48
2015 Kang K, Park TH, Kim N, Jang MU, Park SS, Park JM, Ko Y, Lee S, Lee KB, Lee J, Kim DE, Cho YJ, Kim JT, Kim DH, Cha JK, ... Han MK, et al. Recurrent Stroke, Myocardial Infarction, and Major Vascular Events during the First Year after Acute Ischemic Stroke: The Multicenter Prospective Observational Study about Recurrence and Its Determinants after Acute Ischemic Stroke I. Journal of Stroke and Cerebrovascular Diseases : the Official Journal of National Stroke Association. PMID 26750575 DOI: 10.1016/j.jstrokecerebrovasdis.2015.11.036  0.48
2015 Kim JT, Park MS, Choi KH, Cho KH, Kim BJ, Han MK, Park TH, Park SS, Lee KB, Lee BC, Yu KH, Oh MS, Cha JK, Kim DH, Nah HW, et al. Different Antiplatelet Strategies in Patients With New Ischemic Stroke While Taking Aspirin. Stroke; a Journal of Cerebral Circulation. PMID 26604247 DOI: 10.1161/STROKEAHA.115.011595  0.48
2015 Lee SJ, Cho YJ, Kim JG, Ko Y, Hong KS, Park JM, Kang K, Park TH, Park SS, Lee KB, Cha JK, Kim DH, Lee J, Kim JT, Lee J, ... ... Han MK, et al. Moderate alcohol intake reduces risk of ischemic stroke in Korea. Neurology. PMID 26519539 DOI: 10.1212/WNL.0000000000002165  0.48
2015 Kang J, Jung C, Kim N, Son YR, Choi B, Kim JH, Lee JS, Lee J, Lee J, Jang MS, Yang MH, Han MK, Bae HJ. A Simple Geometric Assessment of Perfusion Lesion Volume at Hyperacute Stage of Ischemic Stroke in Patients with Symptomatic Steno-Occlusion of Major Cerebral Arteries and Risk of Subsequent Cerebral Ischemic Events. Journal of Stroke and Cerebrovascular Diseases : the Official Journal of National Stroke Association. PMID 26476587 DOI: 10.1016/j.jstrokecerebrovasdis.2015.05.025  0.48
2015 Kim BJ, Park JM, Kang K, Lee SJ, Ko Y, Kim JG, Cha JK, Kim DH, Nah HW, Han MK, Park TH, Park SS, Lee KB, Lee J, Hong KS, et al. ERRATUM: Table Correction: Case Characteristics, Hyperacute Treatment, and Outcome Information from the Clinical Research Center for Stroke-Fifth Division Registry in South Korea. Journal of Stroke. 17: 377-378. PMID 26438006 DOI: 10.5853/jos.2015.17.3.377  0.48
2015 Park TH, Ko Y, Lee SJ, Lee KB, Lee J, Han MK, Park JM, Cho YJ, Hong KS, Kim DH, Cha JK, Oh MS, Yu KH, Lee BC, Yoon BW, et al. Identifying Target Risk Factors Using Population Attributable Risks of Ischemic Stroke by Age and Sex. Journal of Stroke. 17: 302-11. PMID 26437995 DOI: 10.5853/jos.2015.17.3.302  0.48
2015 Kim BJ, Han MK, Park TH, Park SS, Lee KB, Lee BC, Yu KH, Oh MS, Cha JK, Kim DH, Lee J, Lee SJ, Ko Y, Park JM, Kang K, et al. Low-Versus Standard-Dose Alteplase for Ischemic Strokes Within 4.5 Hours: A Comparative Effectiveness and Safety Study. Stroke; a Journal of Cerebral Circulation. PMID 26243232 DOI: 10.1161/STROKEAHA.115.010180  0.48
2015 Chung JW, Kim N, Kang J, Park SH, Kim WJ, Ko Y, Park JH, Lee JS, Lee J, Yang MH, Jang MS, Oh CW, Kwon OK, Jung C, Kim BJ, ... Han MK, et al. Blood pressure variability and the development of early neurological deterioration following acute ischemic stroke. Journal of Hypertension. PMID 26237556 DOI: 10.1097/HJH.0000000000000675  0.48
2015 Choi JC, Lee JS, Park TH, Cho YJ, Park JM, Kang K, Lee KB, Lee SJ, Ko Y, Lee J, Kim JT, Yu KH, Lee BC, Cha JK, Kim DH, ... ... Han MK, et al. Effect of pre-stroke statin use on stroke severity and early functional recovery: a retrospective cohort study. Bmc Neurology. 15: 120. PMID 26224123 DOI: 10.1186/s12883-015-0376-3  0.48
2015 Kang J, Kim N, Park TH, Bang OY, Lee JS, Lee J, Han MK, Park SH, Gorelick PB, Bae HJ. Early statin use in ischemic stroke patients treated with recanalization therapy: retrospective observational study. Bmc Neurology. 15: 122. PMID 26224069 DOI: 10.1186/s12883-015-0367-4  0.48
2015 Kim BJ, Han MK, Park TH, Park SS, Lee KB, Lee BC, Yu KH, Oh MS, Cha JK, Kim DH, Lee J, Lee SJ, Ko Y, Park JM, Kang K, et al. Trends in the effectiveness of endovascular recanalization for acute stroke: is a change taking place? Journal of Stroke and Cerebrovascular Diseases : the Official Journal of National Stroke Association. 24: 866-73. PMID 25726023 DOI: 10.1016/j.jstrokecerebrovasdis.2014.12.003  0.48
2015 Kim BJ, Park JM, Kang K, Lee SJ, Ko Y, Kim JG, Cha JK, Kim DH, Nah HW, Han MK, Park TH, Park SS, Lee KB, Lee J, Hong KS, et al. Case characteristics, hyperacute treatment, and outcome information from the clinical research center for stroke-fifth division registry in South Korea. Journal of Stroke. 17: 38-53. PMID 25692106 DOI: 10.5853/jos.2015.17.1.38  0.48
2015 Hong JH, Kang J, Yeo MJ, Kim BJ, Jang MU, Bae HJ, Kwon OK, Hwang GJ, Oh CW, Jung C, Lee JS, Han MK. The 10-year trend of periprocedural complication following carotid artery stenting; single center experience. Cardiovascular and Interventional Radiology. 38: 280-7. PMID 24927963 DOI: 10.1007/s00270-014-0917-y  0.48
2015 Seo KS, Cha JH, Han MK, Ha CS, Kim DH, Lee HJ. Surface treatment of glass and poly(dimethylsiloxane) using atmospheric-pressure plasma jet and analysis of discharge characteristics Japanese Journal of Applied Physics. 54. DOI: 10.7567/JJAP.54.01AE06  0.36
2015 Seo KS, Han MK, Kim DH, Lee HJ. Characterization of Linear Microwave Plasma using the Fluid Simulation Transactions of the Korean Institute of Electrical Engineers. 64: 567-572. DOI: 10.5370/KIEE.2015.64.4.567  0.36
2015 Han MK, Seo KS, Kim DH, Lee HJ. Fabrication of microwave PECVD with linear antenna for large-scale deposition processing, and analysis of Ar plasma characteristics using electrostatic probe and temperature characteristics Transactions of the Korean Institute of Electrical Engineers. 64: 422-428. DOI: 10.5370/KIEE.2015.64.3.422  0.36
2015 Seok O, Han MK, Byun YC, Kim J, Shin HC, Ha MW. High-voltage AlGaN/GaN Schottky barrier diodes on silicon using a post-process O2 treatment Solid-State Electronics. 103: 49-53. DOI: 10.1016/j.sse.2014.09.007  0.52
2015 Jang E, Nam G, Woo H, Lee J, Han MK, Kim SJ, You TS. Lithium-filled double-deck layered structure of the RELixCu2-yP2 (RE = La, Pr, Nd, Gd, Er; 0.82 ≤ x ≤ 1; 1.19 ≤ y ≤ 1.54) series: Experimental and theoretical studies European Journal of Inorganic Chemistry. 2015: 2786-2793. DOI: 10.1002/ejic.201500387  0.52
2014 Ko Y, Lee S, Chung JW, Han MK, Park JM, Kang K, Park TH, Park SS, Cho YJ, Hong KS, Lee KB, Lee J, Kim DE, Kim DH, Cha JK, et al. MRI-based Algorithm for Acute Ischemic Stroke Subtype Classification. Journal of Stroke. 16: 161-72. PMID 25328874 DOI: 10.5853/jos.2014.16.3.161  0.48
2014 Park JM, Cho YJ, Lee KB, Park TH, Lee SJ, Han MK, Ko Y, Lee J, Cha JK, Lee BC, Yu KH, Oh MS, Lee JS, Lee J, Bae HJ. Internet-based control recruitment for a case-control study of major risk factors for stroke in Korea: lessons from the experience. Journal of Stroke and Cerebrovascular Diseases : the Official Journal of National Stroke Association. 23: 2559-65. PMID 25238923 DOI: 10.1016/j.jstrokecerebrovasdis.2014.05.026  0.48
2014 Hong JH, Kang J, Jang MU, Kim BJ, Han MK, Park TH, Park SS, Lee KB, Lee BC, Yu KH, Oh MS, Cha JK, Kim DH, Lee J, Lee SJ, et al. Recanalization therapy for internal carotid artery occlusion presenting as acute ischemic stroke. Journal of Stroke and Cerebrovascular Diseases : the Official Journal of National Stroke Association. 23: 2183-9. PMID 25018113 DOI: 10.1016/j.jstrokecerebrovasdis.2014.04.025  0.48
2014 Park TH, Lee JS, Park SS, Ko Y, Lee SJ, Lee KB, Lee J, Kang K, Park JM, Choi JC, Kim DE, Cho YJ, Kim JT, Kim DH, Cha JK, ... Han MK, et al. Safety and efficacy of intravenous recombinant tissue plasminogen activator administered in the 3- to 4.5-hour window in Korea. Journal of Stroke and Cerebrovascular Diseases : the Official Journal of National Stroke Association. 23: 1805-12. PMID 24957314 DOI: 10.1016/j.jstrokecerebrovasdis.2014.04.027  0.48
2014 Kang J, Park TH, Lee KB, Park JM, Ko Y, Lee SJ, Hong KS, Cho YJ, Lee JS, Lee J, Lee BC, Yu KH, Kim DH, Cha JK, Lee J, ... ... Han MK, et al. Symptomatic steno-occlusion in patients with acute cerebral infarction: prevalence, distribution, and functional outcome. Journal of Stroke. 16: 36-43. PMID 24741563 DOI: 10.5853/jos.2014.16.1.36  0.48
2014 Lim JS, Kim N, Jang MU, Han MK, Kim S, Baek MJ, Jang MS, Ban B, Kang Y, Kim DE, Lee JS, Lee J, Lee BC, Yu KH, Black SE, et al. Cortical hubs and subcortical cholinergic pathways as neural substrates of poststroke dementia. Stroke; a Journal of Cerebral Circulation. 45: 1069-76. PMID 24603067 DOI: 10.1161/STROKEAHA.113.004156  0.48
2014 Kang J, Kim N, Oh CW, Kwon OK, Jung CK, Kim WJ, Park JH, Ko Y, Noh WY, Jang MU, Hong JH, Lee JS, Lee J, Jang MS, Yang MH, ... Han MK, et al. Symptomatic steno-occlusion of cerebral arteries and subsequent ischemic events in patients with acute ischemic stroke. Journal of Stroke and Cerebrovascular Diseases : the Official Journal of National Stroke Association. 23: e347-53. PMID 24582792 DOI: 10.1016/j.jstrokecerebrovasdis.2013.12.028  0.48
2014 Jang MU, Hong JH, Kang J, Kim BJ, Han MK, Lee BC, Yu KH, Oh MS, Hong KS, Cho YJ, Park JM, Kang K, Cha JK, Kim DH, Park TH, et al. Current status of recanalization therapy in acute ischemic stroke with symptomatic intracranial arterial occlusion in Korea. Journal of Stroke and Cerebrovascular Diseases : the Official Journal of National Stroke Association. 23: e339-46. PMID 24560250 DOI: 10.1016/j.jstrokecerebrovasdis.2013.12.027  0.48
2014 Kim BJ, Han MK, Park TH, Park SS, Lee KB, Lee BC, Yu KH, Cha JK, Kim DH, Lee J, Lee SJ, Ko Y, Park JM, Kang K, Cho YJ, et al. Current status of acute stroke management in Korea: a report on a multicenter, comprehensive acute stroke registry. International Journal of Stroke : Official Journal of the International Stroke Society. 9: 514-8. PMID 24256115 DOI: 10.1111/ijs.12199  0.48
2014 Park TH, Ko Y, Lee SJ, Lee KB, Lee J, Han MK, Park JM, Kim DE, Cho YJ, Hong KS, Kim JT, Cho KH, Kim DH, Cha JK, Yu KH, et al. Gender differences in the age-stratified prevalence of risk factors in Korean ischemic stroke patients: a nationwide stroke registry-based cross-sectional study. International Journal of Stroke : Official Journal of the International Stroke Society. 9: 759-65. PMID 24148312 DOI: 10.1111/ijs.12146  0.48
2014 Park TH, Park SS, Ko Y, Lee SJ, Lee KB, Lee J, Kang K, Park JM, Choi JC, Kim DE, Cho YJ, Hong KS, Kim JT, Kim DH, Cha JK, ... Han MK, et al. The iScore predicts clinical response to tissue plasminogen activator in Korean stroke patients. Journal of Stroke and Cerebrovascular Diseases : the Official Journal of National Stroke Association. 23: 367-73. PMID 23800501 DOI: 10.1016/j.jstrokecerebrovasdis.2013.05.025  0.48
2014 Wi SS, Han MK, Kim DH, Lee HJ, Lim J, Jun HS, Hwang D, Lee YJ. 2D fluid simulation of capacitively coupled plasma with cylindrical electrode for roll-to-roll processing Current Applied Physics. DOI: 10.1016/j.cap.2015.03.015  0.36
2013 Park YH, Kim BJ, Kim JS, Yang MH, Jang MS, Kim N, Han MK, Lee JS, Lee J, Kim S, Bae HJ. Impact of both ends of the hemoglobin range on clinical outcomes in acute ischemic stroke. Stroke; a Journal of Cerebral Circulation. 44: 3220-2. PMID 24003047 DOI: 10.1161/STROKEAHA.113.002672  0.48
2013 Chung JW, Kim KJ, Noh WY, Jang MS, Yang MH, Han MK, Kwon OK, Jung C, Kim JH, Oh CW, Lee JS, Lee J, Bae HJ. Validation of FLAIR hyperintense lesions as imaging biomarkers to predict the outcome of acute stroke after intra-arterial thrombolysis following intravenous tissue plasminogen activator. Cerebrovascular Diseases (Basel, Switzerland). 35: 461-8. PMID 23735898 DOI: 10.1159/000350201  0.48
2013 Hong KS, Lee J, Bae HJ, Lee JS, Kang DW, Yu KH, Han MK, Cho YJ, Song P, Park JM, Oh MS, Koo J, Lee BC. Greater stroke severity predominates over all other factors for the worse outcome of cardioembolic stroke. Journal of Stroke and Cerebrovascular Diseases : the Official Journal of National Stroke Association. 22: e373-80. PMID 23697762 DOI: 10.1016/j.jstrokecerebrovasdis.2013.04.008  0.48
2013 Lee SH, Park HK, Ryu WS, Lee JS, Bae HJ, Han MK, Lee YS, Kwon HM, Kim CK, Park ES, Chung JW, Jung KH, Roh JK. Effects of celecoxib on hematoma and edema volumes in primary intracerebral hemorrhage: a multicenter randomized controlled trial. European Journal of Neurology : the Official Journal of the European Federation of Neurological Societies. 20: 1161-9. PMID 23551657 DOI: 10.1111/ene.12140  0.48
2013 Kim M, Seok O, Han MK, Ha MW. High-Voltage AlGaN/GaN high-electron-mobility transistors using thermal oxidation for NiOx passivation Journal of Electrical Engineering and Technology. 8: 1157-1162. DOI: 10.5370/JEET.2013.8.5.1157  0.52
2013 Lee JS, Song SM, Lee SY, Kim YH, Kwon JY, Han MK. Effects of composition ratio on solution-processed InGaZnO thin-film transistors Ecs Transactions. 53: 197-202. DOI: 10.1149/05302.0197ecst  0.52
2013 Ha MW, Seok O, Ahn W, Han MK. Surface degradation of GaN after thermal processes Ecs Transactions. 53: 185-190. DOI: 10.1149/05302.0185ecst  0.52
2013 Ahn W, Seok O, Ha MW, Kim YS, Han MK. Various schottky contacts of AlGaN/GaN Schottky Barrier Diodes (SBDs) Ecs Transactions. 53: 171-176. DOI: 10.1149/05302.0171ecst  0.52
2013 Seok O, Ahn W, Han MK, Ha MW. Effect of Ga2O3 sputtering power on breakdown voltage of AlGaN/GaN high-electron-mobility transistors Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 31. DOI: 10.1116/1.4769863  0.52
2013 Lee SY, Kwon JY, Han MK. Investigation of photo-induced hysteresis and off-current in amorphous In-Ga-Zn oxide thin-film transistors under UV light irradiation Ieee Transactions On Electron Devices. 60: 2574-2579. DOI: 10.1109/TED.2013.2266072  0.52
2013 Choi SH, Han MK. Highly reliable multiple-channel IGZO thin-film transistors employing asymmetric spacing and channel width Ieee Electron Device Letters. 34: 771-773. DOI: 10.1109/LED.2013.2256457  0.52
2013 Kim YS, Ha MW, Seok O, Ahn WJ, Han MK. High breakdown voltage AlGaN/GaN MOS-HEMTs-on-Si with atomic-layer- deposited Al2O3 gate insulator Proceedings of the International Symposium On Power Semiconductor Devices and Ics. 207-211. DOI: 10.1109/ISPSD.2013.6694482  0.52
2013 Ahn W, Seok O, Ha MW, Kim YS, Han MK. Normally-off AlGaN/GaN MOS-HEMTs by KOH wet etch and rf-sputtered HfO 2 gate insulator Proceedings of the International Symposium On Power Semiconductor Devices and Ics. 311-314. DOI: 10.1109/ISPSD.2013.6694411  0.52
2013 Seok O, Ahn W, Han MK, Ha MW. High on/off current ratio AlGaN/GaN MOS-HEMTs employing RF-sputtered HfO2 gate insulators Semiconductor Science and Technology. 28. DOI: 10.1088/0268-1242/28/2/025001  0.52
2013 Kang DW, Lee HM, Han MK. Efficient light incoupling into silicon thin-film solar cells by anti-reflecting MgO/high-compact-AZO with air-side textured glass Journal of Physics D: Applied Physics. 46. DOI: 10.1088/0022-3727/46/48/485107  0.52
2013 Seok O, Ahn W, Han MK, Ha MW. High-breakdown voltage and low onresistance AlGaN/GaN on Si MOS-HEMTs employing an extended TaN gate on HfO2 gate insulator Electronics Letters. 49: 420-422. DOI: 10.1049/el.2013.0149  0.52
2013 Han MK, Kim S, Kim HY, Kim SJ. An alternative strategy to construct interfaces in bulk thermoelectric material: Nanostructured heterophase Bi2Te3/Bi 2S3 Rsc Advances. 3: 4673-4679. DOI: 10.1039/c3ra23197f  0.52
2013 Ha MW, Han MK, Hahn CK. Effects of post-oxidation on leakage current of high-voltage AlGaN/GaN Schottky barrier diodes on Si(1 1 1) substrates Solid-State Electronics. 81: 1-4. DOI: 10.1016/j.sse.2012.11.006  0.52
2013 Ahn W, Seok O, Song SM, Han MK, Ha MW. High-performance AlGaN/GaN High-electron-mobility transistors employing H2O annealing Journal of Crystal Growth. 378: 600-603. DOI: 10.1016/j.jcrysgro.2012.12.170  0.52
2013 Han MK, Ryu H, Kim SJ. Effect of chromium doping on the thermoelectric properties of Bi 2Te3: Cr x Bi2Te3 and Cr x Bi2-x Te3 Journal of Electronic Materials. 42: 2758-2763. DOI: 10.1007/s11664-013-2670-4  0.52
2013 Lee JS, Song SM, Kim YH, Kwon JY, Han MK. Effects of O2 plasma treatment on low temperature solution-processed zinc tin oxide thin film transistors Physica Status Solidi (a) Applications and Materials Science. 210: 1745-1749. DOI: 10.1002/pssa.201329170  0.52
2013 Kim H, Park JE, Kim K, Han MK, Kim SJ, Lee W. Morphology control of Bi2S3 nanostructures and the formation mechanism Chinese Journal of Chemistry. 31: 752-756. DOI: 10.1002/cjoc.201300006  0.52
2012 Lee SY, Kim SJ, Lee Y, Lee WG, Yoon KS, Kwon JY, Han MK. Reliability of oxide thin film transistors under the gate bias stress with 400 nm wavelength light illumination Materials Research Society Symposium Proceedings. 1321: 253-257. DOI: 10.1557/opl.2011.950  0.52
2012 Choi SH, Mo YG, Han MK. Effect of dynamic bias stress (AC) in short-channel (L=1.5μm) p-Type polycrystalline silicon (poly-Si) Thin Film Transistors (TFTs) on the glass substrate Materials Research Society Symposium Proceedings. 1321: 235-240. DOI: 10.1557/opl.2011.810  0.52
2012 Park SG, Kuk SH, Woo JS, Han MK. The suppression of leakage current in the solid phase crystallized silicon (SPC-Si) TFT employing off-state bias annealing under light illumination Materials Research Society Symposium Proceedings. 1321: 241-246. DOI: 10.1557/opl.2011.1374  0.52
2012 Lee YW, Choi SH, Lee JS, Kwon JY, Han MK. Investigation of amorphous IGZO TFT employing Ti/Cu source/drain and SiNx passivation Materials Research Society Symposium Proceedings. 1321: 247-252. DOI: 10.1557/opl.2011.1091  0.52
2012 Kim SJ, Lee SY, Lee YW, Kuk SH, Kwon JY, Han MK. Effect of charge trapping/detrapping on threshold voltage shift of IGZO TFTs under AC bias stress Electrochemical and Solid-State Letters. 15: H108-H110. DOI: 10.1149/2.026204esl  0.52
2012 Lee YW, Kim SJ, Lee SY, Lee WG, Yoon KS, Park JW, Kwon JY, Han MK. Effect of TiCu source/drain on an amorphous IGZO TFT employing SiNx passivation for low data-line resistance Electrochemical and Solid-State Letters. 15: H126-H129. DOI: 10.1149/2.003205esl  0.52
2012 Wook Lee Y, Kim SJ, Lee SY, Lee WG, Yoon KS, Park JW, Han MK. An investigation of the different charge trapping mechanisms for SiN x and SiO 2 gate insulator in a-IGZO TFTs Electrochemical and Solid-State Letters. 15: H84-H87. DOI: 10.1149/2.003204esl  0.52
2012 Kang DW, Kwon JY, Lee DJ, Han MK. Boron and aluminum codoped ZnO transparent conducting films with high electrical stability Journal of the Electrochemical Society. 159: H61-H65. DOI: 10.1149/2.002202jes  0.52
2012 Lee SY, Kuk SH, Song SM, Song MK, Han MK. A novel LTPS TFT pixel circuit for compensating ir drop of large area AMOLED display Ecs Transactions. 50: 269-275. DOI: 10.1149/05008.0269ecst  0.52
2012 Lee SY, Lee JS, Han MK. Issues of backplane technologies for AMOLED Ecs Transactions. 50: 237-248. DOI: 10.1149/05008.0237ecst  0.52
2012 Kang DW, Ahn SW, Lee HM, Han MK. Effect of TiO 2 antireflection layer with various conductivities and refractive indices on performance of amorphous silicon/amorphous silicon germanium tandem solar cells Japanese Journal of Applied Physics. 51. DOI: 10.1143/JJAP.51.10NB10  0.52
2012 Seok O, Ahn W, Han MK, Ha MW. New AlGaN/GaN high electron mobility transistors employing charge accumulation in multiple Al 2O 3/Ga 2O 3 stacks Japanese Journal of Applied Physics. 51. DOI: 10.1143/JJAP.51.101001  0.52
2012 Kim YS, Ha MW, Kim MK, Han MK. AlGaN/GaN Schottky barrier diode on Si substrate employing NiO x/Ni/Au contact Japanese Journal of Applied Physics. 51. DOI: 10.1143/JJAP.51.09MC01  0.52
2012 Lee JS, Kim YJ, Lee YU, Kim YH, Kwon JY, Han MK. Effects of annealing temperature on electrical characteristics of solution-processed zinc tin oxide thin-film transistors Japanese Journal of Applied Physics. 51. DOI: 10.1143/JJAP.51.061101  0.52
2012 Lee SY, Kim SJ, Lee YW, Lee WG, Yoon KS, Han MK. Effect of channel length on the reliability of amorphous indium-gallium-zinc oxide thin film transistors Japanese Journal of Applied Physics. 51. DOI: 10.1143/JJAP.51.03CB03  0.52
2012 Choi SH, Mo YG, Kim HD, Han MK. Hot-carrier effects in short channel (L = 1:5μm) p-type polycrystalline silicon thin-film transistors Japanese Journal of Applied Physics. 51. DOI: 10.1143/JJAP.51.024103  0.52
2012 Choi SH, Mo YG, Kim HD, Han MK. Effect of dynamic bias stress in short-channel (L = 1.5μm) p-type polycrystalline silicon thin-film transistors Japanese Journal of Applied Physics. 51. DOI: 10.1143/JJAP.51.021401  0.52
2012 Kuk SH, Lee SY, Kim SJ, Kim B, Park SJ, Kwon JY, Han MK. Light-induced hysteresis of In-Ga-Zn-O thin-film transistors with various temperatures Ieee Electron Device Letters. 33: 1279-1281. DOI: 10.1109/LED.2012.2205891  0.52
2012 Kim B, Cho HN, Choi WS, Kuk SH, Yoo JS, Yoon SY, Jun M, Hwang YK, Han MK. A novel depletion-mode a-IGZO TFT shift register with a node-shared structure Ieee Electron Device Letters. 33: 1003-1005. DOI: 10.1109/LED.2012.2193655  0.52
2012 Lee YW, Kim SJ, Lee SY, Lee WG, Yoon KS, Lee HJ, Oh JS, Park JW, Han MK. Comparison of electrical properties and bias stability of double-gate a-HIZO TFTs according to TFT structure Ieee Electron Device Letters. 33: 821-823. DOI: 10.1109/LED.2012.2190262  0.52
2012 Kim B, Cho HN, Choi WS, Kuk SH, Jang YH, Yoo JS, Yoon SY, Jun M, Hwang YK, Han MK. Highly reliable depletion-mode a-IGZO TFT gate driver circuits for high-frequency display applications under light illumination Ieee Electron Device Letters. 33: 528-530. DOI: 10.1109/LED.2011.2181969  0.52
2012 Choi SH, Han MK. Effect of deposition temperature of siox passivation layer on the electrical performance of a-IGZO TFTs Ieee Electron Device Letters. 33: 396-398. DOI: 10.1109/LED.2011.2181320  0.52
2012 Choi SH, Jang JH, Kim JJ, Han MK. Low-temperature organic (CYTOP) passivation for improvement of electric characteristics and reliability in IGZO TFTs Ieee Electron Device Letters. 33: 381-383. DOI: 10.1109/LED.2011.2178112  0.52
2012 Lee SY, Kim SJ, Lee YW, Lee WG, Yoon KS, Kwon JY, Han MK. The effect of the photo-induced carriers on the reliability of oxide TFTs under various intensities of light Ieee Electron Device Letters. 33: 218-220. DOI: 10.1109/LED.2011.2177633  0.52
2012 Cho SH, Lee YU, Lee JS, Jo KM, Kim BS, Kong HS, Kwon JY, Han MK. Effect of self-assembled monolayer (SAM) on the oxide semiconductor thin film transistor Ieee/Osa Journal of Display Technology. 8: 35-40. DOI: 10.1109/JDT.2011.2169936  0.52
2012 Ha MW, Woo H, Roh CH, Hahn CK, Seok O, Han MK. 1.5-kV (reverse breakdown) AlGaN/GaN lateral Schottky barrier diode on a Si substrate by surface-O 2 treatment Technical Digest - 25th International Vacuum Nanoelectronics Conference, Ivnc 2012. 398-399. DOI: 10.1109/IVNC.2012.6316997  0.52
2012 Kim YS, Ha MW, Seok OG, An WJ, Han MK. High breakdown AlGaN/GaN HEMTs employing double metal structure Proceedings of the International Symposium On Power Semiconductor Devices and Ics. 273-277. DOI: 10.1109/ISPSD.2012.6229076  0.52
2012 Seok O, Ahn W, Kim YS, Han MK, Ha MW. 3.2 kV AlGaN/GaN MIS-HEMTs employing RF sputtered Ga 2O 3 films Proceedings of the International Symposium On Power Semiconductor Devices and Ics. 269-272. DOI: 10.1109/ISPSD.2012.6229075  0.52
2012 Choi SH, Han MK. Effect of channel widths on negative shift of threshold voltage, including stress-induced hump phenomenon in InGaZnO thin-film transistors under high-gate and drain bias stress Applied Physics Letters. 100. DOI: 10.1063/1.3679109  0.52
2012 Ha MW, Lee JH, Han MK, Hahn CK. Effects of metal spikes on leakage current of high-voltage GaN Schottky barrier diode Solid-State Electronics. 73: 1-6. DOI: 10.1016/j.sse.2012.03.002  0.52
2012 Kang DW, Kwon JY, Shim J, Lee HM, Han MK. Highly conductive GaN anti-reflection layer at transparent conducting oxide/Si interface for silicon thin film solar cells Solar Energy Materials and Solar Cells. 105: 317-321. DOI: 10.1016/j.solmat.2012.06.041  0.52
2012 Kang DW, Kwon JY, Shim J, Lee HM, Han MK. Al 2O 3 antireflection layer between glass and transparent conducting oxide for enhanced light trapping in microcrystalline silicon thin film solar cells Solar Energy Materials and Solar Cells. 101: 22-25. DOI: 10.1016/j.solmat.2012.02.020  0.52
2012 Kuk SH, Lee SY, Song MK, Kwon S, Youn SC, Han MK. The effects of wavelength and negative bias on light-induced hysteresis of In-Ga-Zn-O thin-film transistors Proceedings of the International Display Workshops. 1: 321-324.  0.52
2012 Seok O, Ahn W, Kim YS, Ha MW, Han MK. AlGaN/GaN high electron mobility transistors employing multiple Al 2O3/Ga2O3 stacks 2012 International Conference On Compound Semiconductor Manufacturing Technology, Cs Mantech 2012 0.52
2012 Song SM, Lee JS, Kang DW, Kwon JY, Han MK. Effects of solution-processed Al2O3 gate insulator thickness on IGZO TFTs Proceedings of the International Display Workshops. 1: 297-300.  0.52
2012 Kim YS, Ha MW, Seok O, Ann WJ, Han MK. AlGaN/GaN HEMTs employing NiOX-based Schottky contact and floating metal ring for high breakdown voltage 2012 International Conference On Compound Semiconductor Manufacturing Technology, Cs Mantech 2012 0.52
2012 Song MK, Kuk SH, Lee YW, Han MK. Oxygen vacancy diffusion in amorphous In-Ga-Zn-Oxide thin-film-transistors with Ti/Cu source/drain Proceedings of the 19th International Workshop On Active-Matrix Flatpanel Displays and Devices - Tft Technologies and Fpd Materials, Am-Fpd 2012. 17-20.  0.52
2012 Lee JS, Song SM, Cho SH, Song MK, Kim YH, Kwon JY, Han MK. Excimer laser annealed low temperature solution-processed oxide thin film transistors Proceedings of the 19th International Workshop On Active-Matrix Flatpanel Displays and Devices - Tft Technologies and Fpd Materials, Am-Fpd 2012. 135-138.  0.52
2012 Kuk SH, Song MK, Kwon S, Youn SC, Park WS, Yoon SY, Han MK. The effects of passivation layer on the electrical stability of flexible In-Ga-Zn-O thin film transistors on plastic substrate Proceedings of the 19th International Workshop On Active-Matrix Flatpanel Displays and Devices - Tft Technologies and Fpd Materials, Am-Fpd 2012. 167-170.  0.52
2012 Lee SY, Kuk SH, Song MK, Han MK. The hysteresis and off-current of amorphous indium-gallium-zinc oxide thin film transistors with various active layer thicknesses under the light illumination Proceedings of the 19th International Workshop On Active-Matrix Flatpanel Displays and Devices - Tft Technologies and Fpd Materials, Am-Fpd 2012. 151-154.  0.52
2011 Kim YS, Seok OG, Han MK, Ha MW. The field modulation effect of a fluoride plasma treatment on the blocking characteristics of AlGaN/ GaN high electron mobility transistors Transactions On Electrical and Electronic Materials. 12: 148-151. DOI: 10.4313/TEEM.2011.12.4.148  0.52
2011 Kang DW, Woo JS, Choi SH, Lee SY, Lee HM, Han MK. High haze and low resistive MgO/AZO bi-layer transparent conducting oxide for thin film solar cells Materials Research Society Symposium Proceedings. 1327: 13-18. DOI: 10.1557/opl.2011.1063  0.52
2011 Seok O, Kim YS, Ha MW, Han MK. Effects of SiO2 passivation on oxygen annealed AlGaN/GaN HEMTs Ecs Transactions. 35: 185-190. DOI: 10.1149/1.3570860  0.52
2011 Cho SH, Lee YU, Lee JS, Jo KM, Kim DH, Kim BS, Han MK. The effect of self assembled monolayer(SAM) on the back interface of a-IGZO TFT Ecs Transactions. 35: 353-359. DOI: 10.1149/1.3568879  0.52
2011 Kim YJ, Lee JS, Lee YU, Cho SH, Kim YH, Han MK. Investigation of indium diffusion into solution-processed oxide TFTs with ZTO active layer and IZO source/drain electrodes Ecs Transactions. 35: 341-346. DOI: 10.1149/1.3568877  0.52
2011 Choi SH, Han MK. Bias-temperature- and light-induced instability in short-channel (L= 1:5μm) p-type polycrystalline silicon thin-film transistors on glass substrates Japanese Journal of Applied Physics. 50. DOI: 10.1143/JJAP.50.071401  0.52
2011 Ha MW, Roh CH, Hwang DW, Choi HG, Song HJ, Lee JH, Park JH, Seok O, Lim J, Han MK, Hahn CK. High-voltage Schottky barrier diode on silicon substrate Japanese Journal of Applied Physics. 50. DOI: 10.1143/JJAP.50.06GF17  0.52
2011 Choi SH, Han MK. New bidirectional T-Shaped triple-gate n-type polycrystalline silicon thin-film transistors formed by low-temperature sequential lateral solidification process to reduce of kink effects Japanese Journal of Applied Physics. 50. DOI: 10.1143/JJAP.50.034201  0.52
2011 Kim SJ, Lee SY, Lee YW, Lee WG, Yoon KS, Kwon JY, Han MK. Effect of channel layer thickness on characteristics and stability of amorphous hafnium-indium-zinc oxide thin film transistors Japanese Journal of Applied Physics. 50. DOI: 10.1143/JJAP.50.024104  0.52
2011 Kim B, Choi SC, Lee JS, Kim SJ, Jang YH, Yoon SY, Kim CD, Han MK. A depletion-mode In-Ga-Zn-O thin-film transistor shift register embedded with a full-swing level shifter Ieee Transactions On Electron Devices. 58: 3012-3017. DOI: 10.1109/TED.2011.2157926  0.52
2011 Kim B, Choi SC, Lee SY, Kuk SH, Jang YH, Kim CD, Han MK. A depletion-mode a-IGZO TFT shift register with a single low-voltage-level power signal Ieee Electron Device Letters. 32: 1092-1094. DOI: 10.1109/LED.2011.2157989  0.52
2011 Kim B, Choi SC, Kuk SH, Jang YH, Park KS, Kim CD, Han MK. A novel level shifter employing IGZO TFT Ieee Electron Device Letters. 32: 167-169. DOI: 10.1109/LED.2010.2093505  0.52
2011 Kim B, Ryoo CI, Kim SJ, Bae JU, Seo HS, Kim CD, Han MK. New depletion-mode IGZO TFT shift register Ieee Electron Device Letters. 32: 158-160. DOI: 10.1109/LED.2010.2090939  0.52
2011 Kim YS, Lim J, Seok OG, Han MK. High breakdown voltage AlGaN/GaN HEMT by employing selective fluoride plasma treatment Proceedings of the International Symposium On Power Semiconductor Devices and Ics. 251-255. DOI: 10.1109/ISPSD.2011.5890838  0.52
2011 Lim J, Seok O, Kim YS, Han MK, Kim M. A new vertical GaN SBD employing in-situ metallic gallium ohmic contact Proceedings of the International Symposium On Power Semiconductor Devices and Ics. 247-250. DOI: 10.1109/ISPSD.2011.5890837  0.52
2011 Seok O, Kim YS, Lim J, Han MK. Effect of oxygen annealing temperature on AlGaN/GaN HEMTs Proceedings of the International Symposium On Power Semiconductor Devices and Ics. 235-238. DOI: 10.1109/ISPSD.2011.5890834  0.52
2011 Kim YS, Seok OG, Ha MW, Han MK. The field modulation effect of fluoride plasma treatment on blocking characteristics of AlGaN/GaN HEMT Proceedings of the International Symposium On the Physical and Failure Analysis of Integrated Circuits, Ipfa. DOI: 10.1109/IPFA.2011.5992728  0.52
2011 Kim JJ, Han MK, Noh YY. Flexible OLEDs and organic electronics Semiconductor Science and Technology. 26. DOI: 10.1088/0268-1242/26/3/030301  0.52
2011 Lee J, Woo JS, Park S, Kim J, Yang C, Kim S, Seok C, Lee KI, Park J, Han MK, Seo KS, Yoon E. Enhancement of interface properties between passivation layers and InSb by using remote PECVD Aip Conference Proceedings. 1399: 105-106. DOI: 10.1063/1.3666278  0.52
2011 Kang DW, Kuk SH, Ji KS, Lee HM, Han MK. Effects of ITO precursor thickness on transparent conductive Al doped ZnO film for solar cell applications Solar Energy Materials and Solar Cells. 95: 138-141. DOI: 10.1016/j.solmat.2010.04.068  0.52
2011 Cho SH, Lee JS, Song SM, Choi TY, Noh JH, Kwon JY, Han MK. Self-assembled monolayer modified back interface of oxide semiconductor as a protection layer Proceedings of the International Display Workshops. 1: 595-598.  0.52
2011 Lee JS, Choi SH, Kuk SH, Song MK, Kim YH, Kwon JY, Han MK. Dechlorination and crystallization of solution-processed zinc tin oxide thin film transistor with various annealing temperature Proceedings of the International Display Workshops. 3: 1685-1688.  0.52
2011 Kim SJ, Lee YW, Lee SY, Woo JS, Kwon JY, Han MK, Lee WG, Yoon KS. The effect of AC bias frequency on threshold voltage shift of the amorphous oxide TFTs 49th Annual Sid Symposium, Seminar, and Exhibition 2011, Display Week 2011. 3: 1195-1197.  0.52
2011 Kim B, Lee YU, Han MK, Choi SC, Jang YH, Park KS, Kim CD. A novel IGZO TFT shift register with node-shared structure 49th Annual Sid Symposium, Seminar, and Exhibition 2011, Display Week 2011. 3: 1191-1194.  0.52
2011 Lee SY, Kim B, Lee YW, Kim SJ, Han MK. A novel pixel circuit employing pre-charging method for large area AMOLED display Proceedings of the International Display Workshops. 1: 65-68.  0.52
2011 Ha MW, Han MK, Hahn CK. Oxidation process of GaN Schottky diode for high-voltage applications Transactions of the Korean Institute of Electrical Engineers. 60: 2270-2275.  0.52
2011 Kim B, Lee YU, Han MK, Choi SC, Jang YH, Park KS, Kim CD. P-27: A novel IGZO TFT shift register with node-shared structure Digest of Technical Papers - Sid International Symposium. 42: 1191-1194.  0.52
2011 Kim SJ, Lee YW, Lee SY, Woo JS, Kwon JY, Han MK, Lee WG, Yoon KS. P-28: The effect of AC bias frequency on threshold voltage shift of the amorphous oxide TFTs Digest of Technical Papers - Sid International Symposium. 42: 1195-1197.  0.52
2011 Lee SY, Song SM, Song MK, Lee WG, Yoon KS, Kwon JY, Han MK. The light response characteristics of oxide-based thin film transistors World Academy of Science, Engineering and Technology. 76: 774-777.  0.52
2011 Lee YW, Kim SJ, Lee SY, Song MK, Lee WG, Han MK. Bias stability of a-IGZO TFT and a new shift-register design suitable for a-IGZO TFT World Academy of Science, Engineering and Technology. 76: 770-773.  0.52
2010 Lee JS, Kim YJ, Lee YU, Cho SH, Kim YH, Kwon JY, Han MK. Low temperature solution-processed zinc tin oxide thin film transistor with O2 plasma treatment Ecs Transactions. 33: 283-288. DOI: 10.1149/1.3481248  0.52
2010 Park SG, Lee SY, Woo JS, Yoo JS, Han MK. The AC-bias stability of short channel a-Si:H TFT Ecs Transactions. 33: 51-56. DOI: 10.1149/1.3481218  0.52
2010 Kang DW, Kim SJ, Moon TH, Lee HM, Han MK. Effect of Ga doping on transparent and conductive Al-doped ZnO films prepared using magnetron cosputtering Japanese Journal of Applied Physics. 49. DOI: 10.1143/JJAP.49.125801  0.52
2010 Kang DW, Kuk SH, Choi SH, Moon TH, Lee HM, Han MK. Effect of boron-doping on transparent conducting Al doped ZNO films for thin film solar cells Conference Record of the Ieee Photovoltaic Specialists Conference. 1521-1526. DOI: 10.1109/PVSC.2010.5615851  0.52
2010 Lim J, Choi YH, Kim YS, Han MK. New AlGaN/GaN HEMTs employing both a floating gate and a field plate Physica Scripta T. DOI: 10.1088/0031-8949/2010/T141/014009  0.52
2010 Lee JS, Kim YJ, Lee YU, Kuk SH, Han MK, Kim YH. P-28: Effect of annealing temperature on reliability of solution-processed zinc tin oxide thin film transistors 48th Annual Sid Symposium, Seminar, and Exhibition 2010, Display Week 2010. 3: 1325-1328.  0.52
2010 Kim B, Ryu SB, Choi SC, Choi SH, Jang YH, Park KS, Kim CD, Hwang YK, Chung IJ, Han MK. A novel depletion mode IGZO TFT gate driver embedded with a level shifter Idw'10 - Proceedings of the 17th International Display Workshops. 2: 649-652.  0.52
2010 Kim YH, Oh MS, Kim KH, Kim HJ, Han MK, Park SK. Zinc-tin-oxide thin-film transistors and circuits by ink-jet printing Proceedings of International Meeting On Information Display. 480-481.  0.52
2010 Kim M, Choi YH, Lim J, Kim YS, Seok O, Han MK. High breakdown voltage AlGaN/GaN HEMTs employing recessed gate edge structure 2010 International Conference On Compound Semiconductor Manufacturing Technology, Cs Mantech 2010 0.52
2010 Kim SJ, Lee SY, Kwon JY, Lee WG, Yoon KS, Lee YW, Han MK. Effect of active layer thickness on the indium-gallium-zinc-oxide TFTs Idw'10 - Proceedings of the 17th International Display Workshops. 2: 767-769.  0.52
2010 Seok O, Choi YH, Kim M, Kim J, Hong B, Han MK. AlGaN/GaN schottky barrier diodes employing diamond-like carbon passivation 2010 International Conference On Compound Semiconductor Manufacturing Technology, Cs Mantech 2010 0.52
2010 Kim SJ, Park HS, Lee SY, Ji SB, Han MK, Lee WG, Yoon KS, Lee YW. P-18: Suppression of threshold voltage shift of oxide-based TFT by employing thermal pre-treatment 48th Annual Sid Symposium, Seminar, and Exhibition 2010, Display Week 2010. 3: 1291-1294.  0.52
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