Kai Huang, Ph.D.
Affiliations: | Chemistry | Guangdong Technion-Israel Institute of Technology |
Area:
Physical chemistry, chemical kineticsGoogle:
"Kai Huang"Mean distance: 9.67 | S | N | B | C | P |
Parents
Sign in to add mentor| John C. Polanyi | grad student | 2011 | University of Toronto | |
| (Reaction Dynamics of Alkyl Bromides at Silicon; Experiment and Theory.) | ||||
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Publications
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| Guo SY, Timm MJ, Huang K, et al. (2019) Electron Attachment Leads to Unidirectional In-PlaneMolecular Rotation of Para -Chlorostyrene on Si(100) Journal of Physical Chemistry C. 123: 18425-18431 |
| MacLean OD, Huang K, Leung L, et al. (2017) Direct and Delayed Dynamics In Electron-Induced Surface Reaction. Journal of the American Chemical Society |
| Anggara K, Huang K, Leung L, et al. (2016) Bond selectivity in electron-induced reaction due to directed recoil on an anisotropic substrate. Nature Communications. 7: 13690 |
| Anggara K, Huang K, Leung L, et al. (2016) Clocking Surface-Reaction by In-Plane Product Rotation. Journal of the American Chemical Society |
| Huang K, MacLean O, Guo SY, et al. (2016) Dynamics of surface-migration: Electron-induced reaction of 1,2-dihaloethanes on Si(100) Surface Science |
| Huang K, Leung L, Lim T, et al. (2014) Vibrational excitation induces double reaction. Acs Nano. 8: 12468-75 |
| Wang CG, Huang K, Ji W. (2014) Dissociative adsorption of CH₃X (X = Br and Cl) on a silicon(100) surface revisited by density functional theory. The Journal of Chemical Physics. 141: 174701 |
| Huang K, Leung L, Lim T, et al. (2013) Single-electron induces double-reaction by charge delocalization. Journal of the American Chemical Society. 135: 6220-5 |
| Huang K, McNab IR, Polanyi JC, et al. (2012) Adsorbate alignment in surface halogenation: standing up is better than lying down. Angewandte Chemie (International Ed. in English). 51: 9061-5 |
| Ebrahimi M, Guo SY, Huang K, et al. (2012) Effect of alkyl chain-length on dissociative attachment: 1-bromoalkanes on Si(100)-c(4×2) Journal of Physical Chemistry C. 116: 10129-10137 |