Nicholas A. Fichtenbaum, Ph.D.
Affiliations: | 2008 | Electrical & Computer Engineering | University of California, Santa Barbara, Santa Barbara, CA, United States |
Area:
Electronics & PhotonicsGoogle:
"Nicholas Fichtenbaum"Parents
Sign in to add mentor| Umesh Mishra | grad student | 2008 | UC Santa Barbara | |
| (Growth of nitrogen-face gallium nitride by MOCVD.) | ||||
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Publications
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| Keller S, Li H, Laurent M, et al. (2014) Recent progress in metal-organic chemical vapor deposition of (0001¯) N-polar group-III nitrides Semiconductor Science and Technology. 29 |
| Wong MH, Keller S, Dasgupta NS, et al. (2013) N-polar GaN epitaxy and high electron mobility transistors Semiconductor Science and Technology. 28 |
| Wu YF, Coffie R, Fichtenbaum N, et al. (2011) Total GaN solution to electrical power conversion Device Research Conference - Conference Digest, Drc. 217-218 |
| Roy T, Zhang EX, Puzyrev YS, et al. (2011) Temperature-dependence and microscopic origin of low frequency 1/f noise in GaN/AlGaN high electron mobility transistors Applied Physics Letters. 99 |
| Masui H, Keller S, Fellows N, et al. (2009) Luminescence characteristics of N-polar GaN and InGaN films grown by metal organic chemical vapor deposition Japanese Journal of Applied Physics. 48 |
| Chu R, Shen L, Fichtenbaum N, et al. (2008) Correlation between DC-RF dispersion and gate leakage in deeply recessed GaN/AlGaN/GaN HEMTs Ieee Electron Device Letters. 29: 303-305 |
| Pei Y, Chu R, Shen L, et al. (2008) Effect of Al composition and gate recess on power performance of AlGaN/ GaN high-electron mobility transistors Ieee Electron Device Letters. 29: 300-302 |
| Chu R, Shen L, Fichtenbaum N, et al. (2008) Plasma treatment for leakage reduction in AlGaN/GaN and GaN Schottky contacts Ieee Electron Device Letters. 29: 297-299 |
| Chu R, Shen L, Fichtenbaum N, et al. (2008) V-Gate GaN HEMTs for X-Band power applications Ieee Electron Device Letters. 29: 974-976 |
| Keller S, Suh CS, Fichtenbaum NA, et al. (2008) Influence of the substrate misorientation on the properties of N-polar InGaN/GaN and AlGaN/GaN heterostructures Journal of Applied Physics. 104 |