| Year |
Citation |
Score |
| 2021 |
Wang J, Li H, Li H, Keller S, Mishra UK, Nener BD, Parish G, Atkin R. Effects of surface oxidation on the pH-dependent surface charge of oxidized aluminum gallium nitride. Journal of Colloid and Interface Science. 603: 604-614. PMID 34217948 DOI: 10.1016/j.jcis.2021.06.126 |
0.531 |
|
| 2020 |
Wang J, Zhang X, Li H, Wang C, Li H, Keller S, Mishra UK, Nener BD, Parish G, Atkin R. pH-Dependent surface charge at the interfaces between aluminum gallium nitride (AlGaN) and aqueous solution revealed by surfactant adsorption. Journal of Colloid and Interface Science. 583: 331-339. PMID 33007589 DOI: 10.1016/J.Jcis.2020.09.036 |
0.591 |
|
| 2019 |
Wang J, Zhang X, Wang C, Li H, Li H, Keller S, Mishra UK, Nener BD, Parish G, Atkin R. pH-dependent surface properties of the gallium nitride - Solution interface mapped by surfactant adsorption. Journal of Colloid and Interface Science. 556: 680-688. PMID 31499439 DOI: 10.1016/J.Jcis.2019.08.079 |
0.578 |
|
| 2019 |
Parish G, Khir FLM, Krishnan NR, Wang J, Krisjanto JS, Li H, Umana-Membreno GA, Keller S, Mishra UK, Baker MV, Nener BD, Myers M. Role of GaN cap layer for reference electrode free AlGaN/GaN-based pH sensors Sensors and Actuators B: Chemical. 287: 250-257. DOI: 10.1016/J.Snb.2019.02.039 |
0.469 |
|
| 2019 |
Afandi Y, Parish G, Keating A. Compensating porosity gradient to produce flat, micromachined porous silicon structures Microporous and Mesoporous Materials. 284: 427-433. DOI: 10.1016/J.Micromeso.2019.04.059 |
0.358 |
|
| 2018 |
Anvari R, Spagnoli D, Umana-Membreno GA, Parish G, Nener B. Effect of pH and structure on the channel conductivity of AlGaN/GaN heterostructure based sensors Sensors and Actuators B: Chemical. 269: 54-61. DOI: 10.1016/J.Snb.2018.04.148 |
0.357 |
|
| 2018 |
Sun X, Parish G, Keating A. Micromachined microbeams made from porous silicon for dynamic and static mode sensing Sensors and Actuators a: Physical. 269: 91-98. DOI: 10.1016/J.Sna.2017.11.003 |
0.316 |
|
| 2018 |
Anvari R, Spagnoli D, Umana-Membreno GA, Parish G, Nener B. Theoretical study of the influence of surface effects on GaN-based chemical sensors Applied Surface Science. 452: 75-86. DOI: 10.1016/J.Apsusc.2018.04.250 |
0.387 |
|
| 2018 |
Myers M, Khir FLM, Home MA, Mennell C, Gillbanks J, Tadich A, Baker MV, Nener BD, Parish G. XPS/NEXAFS spectroscopic and conductance studies of glycine on AlGaN/GaN transistor devices Applied Surface Science. 435: 23-30. DOI: 10.1016/J.Apsusc.2017.11.051 |
0.389 |
|
| 2017 |
Asadnia M, Myers M, Umana-Membreno GA, Sanders TM, Mishra UK, Nener BD, Baker MV, Parish G. Ca(2+) detection utilising AlGaN/GaN transistors with ion-selective polymer membranes. Analytica Chimica Acta. 987: 105-110. PMID 28916033 DOI: 10.1016/J.Aca.2017.07.066 |
0.513 |
|
| 2017 |
Sun X, Parish G, Keating A. Fabrication of uniform porosity, all-porous-silicon microstructures and stress/stress gradient control Journal of Micromechanics and Microengineering. 27: 044001. DOI: 10.1088/1361-6439/Aa556C |
0.328 |
|
| 2017 |
Sanders TM, Myers M, Asadnia M, Umana-Membreno GA, Baker M, Fowkes N, Parish G, Nener B. Description of ionophore-doped membranes with a blocked interface Sensors and Actuators B: Chemical. 250: 499-508. DOI: 10.1016/J.Snb.2017.04.143 |
0.307 |
|
| 2016 |
Asadnia M, Myers M, Akhavan ND, O'Donnell K, Umana-Membreno GA, Mishra UK, Nener B, Baker M, Parish G. Mercury(II) selective sensors based on AlGaN/GaN transistors. Analytica Chimica Acta. 943: 1-7. PMID 27769368 DOI: 10.1016/J.Aca.2016.08.045 |
0.304 |
|
| 2015 |
Podolska A, Broxtermann D, Malindretos J, Umana-Membreno GA, Keller S, Mishra UK, Rizzi A, Nener BD, Parish G. Method to Predict and Optimize Charge Sensitivity of Ungated AlGaN/GaN HEMT-Based Ion Sensor Without Use of Reference Electrode Ieee Sensors Journal. 15: 5320-5326. DOI: 10.1109/Jsen.2015.2439692 |
0.58 |
|
| 2014 |
Sun X, Keating A, Parish G. Released micromachined beams utilizing laterally uniform porosity porous silicon. Nanoscale Research Letters. 9: 426. PMID 25221457 DOI: 10.1186/1556-276X-9-426 |
0.335 |
|
| 2014 |
Khir FLM, Myers M, Podolska A, Sanders TM, Baker MV, Nener BD, Parish G. Synchrotron-based XPS studies of AlGaN and GaN surface chemistry and its relationship to ion sensor behaviour Applied Surface Science. 314: 850-857. DOI: 10.1016/J.Apsusc.2014.07.002 |
0.367 |
|
| 2013 |
Myers M, Khir FLM, Podolska A, Umana-Membreno GA, Nener B, Baker M, Parish G. Nitrate ion detection using AlGaN/GaN heterostructure-based devices without a reference electrode Sensors and Actuators, B: Chemical. 181: 301-305. DOI: 10.1016/J.Snb.2013.02.006 |
0.342 |
|
| 2013 |
Podolska A, Hool LC, Pfleger KDG, Mishra UK, Parish G, Nener BD. AlGaN/GaN-based biosensor for label-free detection of biological activity Sensors and Actuators, B: Chemical. 177: 577-582. DOI: 10.1016/J.Snb.2012.11.086 |
0.5 |
|
| 2012 |
Lai M, Sridharan GM, Parish G, Bhattacharya S, Keating A. Multilayer porous silicon diffraction gratings operating in the infrared. Nanoscale Research Letters. 7: 645. PMID 23176591 DOI: 10.1186/1556-276X-7-645 |
0.308 |
|
| 2012 |
Lai M, Parish G, Liu Y, Keating AJ. Surface morphology control of passivated porous silicon using reactive ion etching Journal of Microelectromechanical Systems. 21: 756-761. DOI: 10.1109/Jmems.2011.2182501 |
0.35 |
|
| 2012 |
Podolska A, Seeber RM, Mishra UK, Pfleger KDG, Parish G, Nener BD. Detection of biological reactions by AlGaN/GaN biosensor Conference On Optoelectronic and Microelectronic Materials and Devices, Proceedings, Commad. 75-76. DOI: 10.1109/COMMAD.2012.6472367 |
0.472 |
|
| 2012 |
Wee D, Parish G, Nener BD. The influence of the Franz-Keldysh effect on the electron diffusion length in p-type GaN determined using the spectral photocurrent technique Journal of Applied Physics. 112. DOI: 10.1063/1.4746740 |
0.311 |
|
| 2012 |
Podolska A, Tham S, Hart RD, Seeber RM, Kocan M, Mishra UK, Pfleger KDG, Parish G, Nener BD. Biocompatibility of semiconducting AlGaN/GaN material with living cells Sensors and Actuators, B: Chemical. 169: 401-406. DOI: 10.1016/J.Snb.2012.04.015 |
0.537 |
|
| 2011 |
Fehlberg TB, Milne JS, Umana-Membreno GA, Keller S, Mishra UK, Nener BD, Parish G. Transport studies of AlGaN/GaN heterostructures of different Al mole fractions with variable SiNx passivation stress Ieee Transactions On Electron Devices. 58: 2589-2596. DOI: 10.1109/Ted.2011.2154333 |
0.338 |
|
| 2011 |
Umana-Membreno GA, Fehlberg TB, Kolluri S, Brown DF, Keller S, Mishra UK, Nener BD, Faraone L, Parish G. Two-dimensional electron gas transport anisotropy in N-polar GaN/AlGaN heterostructures Applied Physics Letters. 98. DOI: 10.1063/1.3595341 |
0.698 |
|
| 2011 |
Baharin A, Pinto RS, Mishra UK, Nener BD, Parish G. Low contact resistance to plasma-etched p-type GaN Electronics Letters. 47: 342-343. DOI: 10.1049/El.2010.3052 |
0.379 |
|
| 2011 |
Baharin A, Pinto RS, Mishra UK, Nener BD, Parish G. Low resistivity contacts to plasma etched Mg-doped GaN using very low power inductively coupled plasma etching Thin Solid Films. 519: 3686-3689. DOI: 10.1016/J.Tsf.2011.01.276 |
0.376 |
|
| 2011 |
Kocan M, Recht F, Umana-Membreno GA, Kilburn MR, Nener BD, Mishra UK, Parish G. Implantation angle periphery effects on non-alloyed Si-implanted ohmic contacts for AlGaN/GaN high electron mobility transistors Solid-State Electronics. 56: 56-59. DOI: 10.1016/J.Sse.2010.10.013 |
0.759 |
|
| 2011 |
Umana-Membreno GA, Fehlberg TB, Kolluri S, Brown DF, Parish G, Nener BD, Keller S, Mishra UK, Faraone L. Mobility spectrum analysis of anisotropic electron transport in N-polar GaN/AlGaN heterostructures on vicinal sapphire substrates Microelectronic Engineering. 88: 1079-1082. DOI: 10.1016/J.Mee.2011.03.105 |
0.703 |
|
| 2011 |
Lai M, Parish G, Dell J, Liu Y, Keating A. Chemical resistance of porous silicon: Photolithographic applications Physica Status Solidi (C) Current Topics in Solid State Physics. 8: 1847-1850. DOI: 10.1002/Pssc.201000132 |
0.339 |
|
| 2010 |
James TD, Parish G, Musca CA, Keating AJ. N2-based thermal passivation of porous silicon to achieve long-term optical stability Electrochemical and Solid-State Letters. 13: H428-H431. DOI: 10.1149/1.3489075 |
0.314 |
|
| 2010 |
Podolska A, Kocan M, Cabezas AMG, Wilson TD, Umana-Membreno GA, Nener BD, Parish G, Keller S, Mishra UK. Ion versus pH sensitivity of ungated AlGaN/GaN heterostructure-based devices Applied Physics Letters. 97. DOI: 10.1063/1.3462323 |
0.347 |
|
| 2008 |
Menozzi R, Umana-Membreno GA, Nener BD, Parish G, Sozzi G, Faraone L, Mishra UK. Temperature-dependent characterization of AlGaN/GaN HEMTs: Thermal and source/drain resistances Ieee Transactions On Device and Materials Reliability. 8: 255-264. DOI: 10.1109/Tdmr.2008.918960 |
0.332 |
|
| 2008 |
Baharin A, Kocan M, Umana-Membreno GA, Mishra UK, Parish G, Nener BD. Experimental and numerical investigation of the electrical characteristics of vertical n-p junction diodes created by Si implantation into p-GaN Conference On Optoelectronic and Microelectronic Materials and Devices, Proceedings, Commad. 12-15. DOI: 10.1109/COMMAD.2008.4802080 |
0.378 |
|
| 2008 |
Parish G, Kennedy RA, Umana-Membreno GA, Nener BD. Localised defect-induced Schottky barrier lowering in n-GaN Schottky diodes Solid-State Electronics. 52: 171-174. DOI: 10.1016/J.Sse.2007.09.005 |
0.373 |
|
| 2008 |
Fehlberg TB, Gallinat CS, Umana-Membreno GA, Koblmüller G, Nener BD, Speck JS, Parish G. Effect of MBE growth conditions on multiple electron transport in InN Journal of Electronic Materials. 37: 593-596. DOI: 10.1007/S11664-007-0345-8 |
0.364 |
|
| 2008 |
Kocan M, Umana-Membreno GA, Kilburn MR, Fletcher IR, Recht F, McCarthy L, Mishra UK, Nener BD, Parish G. Scanning ion probe studies of silicon implantation profiles in AlGaN/GaN HEMT heterostructures Journal of Electronic Materials. 37: 554-557. DOI: 10.1007/S11664-007-0336-9 |
0.754 |
|
| 2008 |
Umana-Membreno GA, Parish G, Fichtenbaum N, Keller S, Mishra UK, Nener BD. Electrically active defects in GaN layers grown with and without Fe-doped buffers by metal-organic chemical vapor deposition Journal of Electronic Materials. 37: 569-572. DOI: 10.1007/S11664-007-0313-3 |
0.703 |
|
| 2008 |
Kocan M, Umana-Membreno GA, Recht F, Baharin A, Fichtenbaum NA, McCarthy L, Keller S, Menozzi R, Mishra UK, Parish G, Nener BD. GaN vertical n-p junctions prepared by Si ion implantation Physica Status Solidi (C) Current Topics in Solid State Physics. 5: 1938-1940. DOI: 10.1002/Pssc.200778496 |
0.741 |
|
| 2008 |
Fehlberg TB, Koblmüller G, Umana-Membreno GA, Gallinat CS, Nener BD, Speck JS, Parish G. Multiple carrier transport in N-face indium nitride Physica Status Solidi (B) Basic Research. 245: 907-909. DOI: 10.1002/Pssb.200778665 |
0.378 |
|
| 2007 |
James TD, Keating AJ, Parish G, Faraone L, Musca CA. A technique for fabricating uniform double-sided porous silicon wafers Electrochemical and Solid-State Letters. 10: 130-133. DOI: 10.1149/1.2777007 |
0.348 |
|
| 2007 |
Umana-Membreno GA, Dell JM, Parish G, Nener BD, Faraone L, Keller S, Mishra UK. Annealing of 60Co gamma radiation-induced damage in n-GaN Schottky barrier diodes Journal of Applied Physics. 101. DOI: 10.1063/1.2435972 |
0.331 |
|
| 2007 |
Kocan M, Umana-Membreno GA, Chung JS, Recht F, McCarthy L, Keller S, Mishra UK, Parish G, Nener BD. Characterization of non-alloyed ohmic contacts to Si-implanted AlGaN/GaN heterostructures for high-electron mobility transistors Journal of Electronic Materials. 36: 1156-1159. DOI: 10.1007/S11664-007-0184-7 |
0.765 |
|
| 2007 |
Fehlberg TB, Umana-Membreno GA, Gallinat CS, Koblmüller G, Bernardis S, Nener BD, Parish G, Speck JS. Characterisation of multiple carrier transport in indium nitride grown by molecular beam epitaxy Physica Status Solidi (C) Current Topics in Solid State Physics. 4: 2423-2427. DOI: 10.1002/Pssc.200674780 |
0.384 |
|
| 2007 |
Umana-Membreno GA, Parish G, Nener BD, Buttari D, Keller S, Mishra UK. Magnetotransport in AlGaN/GaN and AlGaN/AlN/GaN heterostructures Physica Status Solidi (B) Basic Research. 244: 1877-1881. DOI: 10.1002/Pssb.200674872 |
0.394 |
|
| 2006 |
James TD, Parish G, Winchester KJ, Musca CA. A crystallographic alignment method in silicon for deep, long microchannel fabrication Journal of Micromechanics and Microengineering. 16: 2177-2182. DOI: 10.1088/0960-1317/16/10/034 |
0.364 |
|
| 2005 |
Parish G, Umana-Membreno GA, Jolley SM, Buttari D, Keller S, Nener BD, Mishra UK. AlGaN/AlN/GaN high electron mobility transistors with improved carrier transport Conference On Optoelectronic and Microelectronic Materials and Devices, Proceedings, Commad. 29-32. DOI: 10.1109/COMMAD.2004.1577484 |
0.333 |
|
| 2005 |
Pulfrey DL, Parish G, Wee D, Nener BD. Surface-layer damage and responsivity in sputtered-ITO/p-GaN Schottky-barrier photodiodes Solid-State Electronics. 49: 1969-1973. DOI: 10.1016/J.Sse.2005.09.013 |
0.413 |
|
| 2005 |
Umana-Membreno GA, Dell JM, Parish G, Nener BD, Faraone L, Ventury R, Mishra UK. Effect of 60Co gamma-irradiation on two-dimensional electron gas transport and device characteristics of AlGaN/GaN HEMTs Physica Status Solidi C: Conferences. 2: 2581-2584. DOI: 10.1002/Pssc.200461519 |
0.449 |
|
| 2004 |
Cai S, Parish G, Dell JM, Nener BD. Contribution of hole trap to persistent photoconductivity in n-type GaN Journal of Applied Physics. 96: 1019-1023. DOI: 10.1063/1.1760840 |
0.324 |
|
| 2003 |
Umana-Membreno GA, Dell JM, Parish G, Nener BD, Faraone L, Mishra UK. 60Co Gamma Irradiation Effects on n-GaN Schottky Diodes Ieee Transactions On Electron Devices. 50: 2326-2335. DOI: 10.1109/Ted.2003.820122 |
0.344 |
|
| 2003 |
Coffie R, Shen L, Parish G, Chini A, Buttari D, Heikman S, Keller S, Mishra UK. Unpassivated p-GaN/AlGaN/GaN HEMTs with 7.1 W/mm at 10 GHz Electronics Letters. 39: 1419-1420. DOI: 10.1049/El:20030872 |
0.783 |
|
| 2002 |
Umana-Membreno GA, Dell JM, Hessler TP, Nener BD, Parish G, Faraone L, Mishra UK. 60Co gamma-irradiation-induced defects in n-GaN Applied Physics Letters. 80: 4354-4356. DOI: 10.1063/1.1483390 |
0.323 |
|
| 2001 |
Keller S, Wu YF, Parish G, Ziang N, Xu JJ, Keller BP, DenBaars SP, Mishra UK. Gallium nitride based high power heterojunction field effect transistors: Process development and present status at UCSB Ieee Transactions On Electron Devices. 48: 552-559. DOI: 10.1109/16.906450 |
0.423 |
|
| 2001 |
Pulfrey DL, Kuek JJ, Leslie MP, Nener BD, Parish G, Mishra UK, Kozodoy P, Tarsa EJ. High UV/solar rejection ratios in GaN/AlGaN/GaN P-I-N photodiodes Ieee Transactions On Electron Devices. 48: 486-489. DOI: 10.1109/16.906440 |
0.388 |
|
| 2001 |
Xing H, Keller S, Wu YF, McCarthy L, Smorchkova IP, Buttari D, Coffie R, Green DS, Parish G, Heikman S, Shen L, Zhang N, Xu JJ, Keller BP, DenBaars SP, et al. Gallium nitride based transistors Journal of Physics Condensed Matter. 13: 7139-7157. DOI: 10.1088/0953-8984/13/32/317 |
0.745 |
|
| 2001 |
Keller S, Vetury R, Parish G, DenBaars SP, Mishra UK. Effect of growth termination conditions on the performance of AlGaN/GaN high electron mobility transistors Applied Physics Letters. 78: 3088-3090. DOI: 10.1063/1.1372620 |
0.709 |
|
| 2001 |
Kuek JJ, Pulfrey DL, Nener BD, Dell JM, Parish G, Mishra UK. Effects of Band Tail Absorption on AlGaN-Based Ultraviolet Photodiodes Physica Status Solidi (a) Applied Research. 188: 311-315. DOI: 10.1002/1521-396X(200111)188:1<311::Aid-Pssa311>3.0.Co;2-C |
0.338 |
|
| 2001 |
Parish G, Hansen M, Moran B, Keller S, Denbaars SP, Mishra UK. Solar-Blind p-GaN/i-AlGaN/n-AlGaN Ultraviolet Photodiodes on SiC Substrate Physica Status Solidi (a) Applied Research. 188: 297-300. DOI: 10.1002/1521-396X(200111)188:1<297::Aid-Pssa297>3.0.Co;2-Y |
0.416 |
|
| 2000 |
Zhang N-, Keller S, Parish G, Heikman S, DenBaars SP, Mishra UK. High breakdown GaN HEMT with overlapping gate structure Ieee Electron Device Letters. 21: 421-423. DOI: 10.1109/55.863096 |
0.419 |
|
| 2000 |
Xu J, Keller S, Parish G, Heikman S, Mishra U, York R. A 3-10-GHz GaN-based flip-chip integrated broad-band power amplifier Ieee Transactions On Microwave Theory and Techniques. 48: 2573-2578. DOI: 10.1109/22.899015 |
0.376 |
|
| 2000 |
Antoszewski J, Gracey M, Dell JM, Faraone L, Fisher TA, Parish G, Wu YF, Mishra UK. Scattering mechanisms limiting two-dimensional electron gas mobility in Al0.25Ga0.75N/GaN modulation-doped field-effect transistors Journal of Applied Physics. 87: 3900-3904. DOI: 10.1063/1.372432 |
0.417 |
|
| 2000 |
Keller S, Parish G, Speck JS, DenBaars SP, Mishra UK. Dislocation reduction in GaN films through selective island growth of InGaN Applied Physics Letters. 77: 2665-2667. DOI: 10.1063/1.1319528 |
0.573 |
|
| 2000 |
Tarsa EJ, Kozodoy P, Ibbetson J, Keller BP, Parish G, Mishra U. Solar-blind AlGaN-based inverted heterostructure photodiodes Applied Physics Letters. 77: 316-318. DOI: 10.1063/1.126962 |
0.566 |
|
| 2000 |
Umana-Membreno GA, Dell JM, Faraone L, Wu YF, Parish G, Mishra UK. Anomalous drain current-voltage characteristics in AlGaN/GaN MODFETs at low temperatures Microelectronics Journal. 31: 531-536. DOI: 10.1016/S0026-2692(00)00026-4 |
0.407 |
|
| 2000 |
Parish G, Keller S, Denbaars SP, Mishra UK. SIMS investigations into the effect of growth conditions on residual impurity and silicon incorporation in GaN and Al x Ga 1−x N Journal of Electronic Materials. 29: 15-20. DOI: 10.1007/S11664-000-0087-3 |
0.383 |
|
| 2000 |
Parish G, Hansen M, Moran B, Keller S, DenBaars SP, Mishra UK. AlGaN/GaN solar-blind ultraviolet photodiodes on SiC substrate Proceedings of the Ieee Cornell Conference On Advanced Concepts in High Speed Semiconductor Devices and Circuits. 215-224. |
0.336 |
|
| 2000 |
Zhang NQ, Keller S, Parish G, Heikman S, DenBaars SP, Mishra UK. High breakdown GaN HEMT with overlapping gate structure Ieee Electron Device Letters. 21: 373-375. |
0.313 |
|
| 1999 |
Keller S, Parish G, Fini PT, Heikman S, Chen C, Zhang N, DenBaars SP, Mishra UK, Wu Y. Metalorganic chemical vapor deposition of high mobility AlGaN/GaN heterostructures Journal of Applied Physics. 86: 5850-5857. DOI: 10.1063/1.371602 |
0.431 |
|
| 1999 |
Parish G, Keller S, Kozodoy P, Ibbetson JP, Marchand H, Fini PT, Fleischer SB, DenBaars SP, Mishra UK, Tarsa EJ. High-performance (Al,Ga)N-based solar-blind ultraviolet p-i-n detectors on laterally epitaxially overgrown GaN Applied Physics Letters. 75: 247-249. DOI: 10.1063/1.124337 |
0.412 |
|
| 1999 |
Chen CH, Krishnamurthy K, Keller S, Parish G, Rodwell M, Mishra UK, Wu YF. AlGaN/GaN dual-gate modulation-doped field-effect transistors Electronics Letters. 35: 933-935. DOI: 10.1049/El:19990627 |
0.413 |
|
| 1999 |
Pulfrey DL, Kuek JJ, Nener BD, Parish G, Mishra UK, Tarsa EJ. Towards an AlGaN, solar-blind, p-i-n photodetector Physica Status Solidi (a) Applied Research. 176: 169-173. DOI: 10.1002/(Sici)1521-396X(199911)176:1<169::Aid-Pssa169>3.0.Co;2-6 |
0.4 |
|
| 1999 |
Parish G, Keller S, Fini PT, Vetury R, Chen CH, DenBaars SP, Mishra UK, Wu YF. MOCVD growth and properties of thin AlxGa1-xN layers on GaN Conference On Optoelectronic and Microelectronic Materials and Devices, Proceedings, Commad. 478-481. |
0.675 |
|
| 1999 |
Keller S, Parish G, Fini PT, Heikman S, Chen CH, Zhang N, DenBaars SP, Mishra UK, Wu YF. Metalorganic chemical vapor deposition of high mobility AlGaN/GaN heterostructures Journal of Applied Physics. 86: 5850-5857. |
0.343 |
|
| 1999 |
Parish G, Keller S, Kozodoy P, Ibbetson JP, Marchand H, Fini PT, Fleischer SB, DenBaars SP, Mishra UK, Tarsa EJ. Low dark current p-i-n (Al,Ga)N-based solar-blind UV detectors on Laterally Epitaxially Overgrown GaN Conference On Optoelectronic and Microelectronic Materials and Devices, Proceedings, Commad. 175-178. |
0.308 |
|
| 1998 |
Chen CH, Keller S, Parish G, Vetury R, Kozodoy P, Hu EL, Denbaars SP, Mishra UK, Wu Y. High-transconductance self-aligned AlGaN/GaN modulation-doped field-effect transistors with regrown ohmic contacts Applied Physics Letters. 73: 3147-3149. DOI: 10.1063/1.122701 |
0.679 |
|
| 1998 |
Vetury R, Wu YF, Fini PT, Parish G, Keller S, DenBaars SP, Mishra UK. Direct measurement of gate depletion in high breakdown (405 V) AlGaN/GaN heterostructure field effect transistors Technical Digest - International Electron Devices Meeting. 55-58. |
0.658 |
|
| 1997 |
Parish G, Musca CA, Siliquini JF, Antoszewki J, Dell JM, Nener BD, Faraone L, Gouws GJ. A monolithic dual-band HgCdTe infrared detector structure Ieee Electron Device Letters. 18: 352-354. DOI: 10.1109/55.596934 |
0.363 |
|
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