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Yi Pei, Ph.D. - Publications

Affiliations: 
2009 Electrical & Computer Engineering University of California, Santa Barbara, Santa Barbara, CA, United States 
Area:
Electronics & Photonics
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36 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2013 Sasikumar A, Arehart AR, Martin-Horcajo S, Romero MF, Pei Y, Brown D, Recht F, Di Forte-Poisson MA, Calle F, Tadjer MJ, Keller S, Denbaars SP, Mishra UK, Ringel SA. Direct comparison of traps in InAlN/GaN and AlGaN/GaN high electron mobility transistors using constant drain current deep level transient spectroscopy Applied Physics Letters. 103. DOI: 10.1063/1.4813862  0.809
2013 Arehart AR, Sasikumar A, Rajan S, Via GD, Poling B, Winningham B, Heller ER, Brown D, Pei Y, Recht F, Mishra UK, Ringel SA. Direct observation of 0.57 eV trap-related RF output power reduction in AlGaN/GaN high electron mobility transistors Solid-State Electronics. 80: 19-22. DOI: 10.1016/J.Sse.2012.09.010  0.805
2012 Cardwell DW, Arehart AR, Poblenz C, Pei Y, Speck JS, Mishra UK, Ringel SA, Pelz JP. Nm-scale measurements of fast surface potential transients in an AlGaN/GaN high electron mobility transistor Applied Physics Letters. 100. DOI: 10.1063/1.4714536  0.622
2012 Möreke J, Ťapajna M, Uren MJ, Pei Y, Mishra UK, Kuball M. Effects of gate shaping and consequent process changes on AlGaN/GaN HEMT reliability Physica Status Solidi (a) Applications and Materials Science. 209: 2646-2652. DOI: 10.1002/Pssa.201228395  0.646
2011 Higashiwaki M, Pei Y, Chu R, Mishra UK. Effects of Barrier Thinning on Small-Signal and 30-GHz Power Characteristics of AlGaN/GaN Heterostructure Field-Effect Transistors Ieee Transactions On Electron Devices. 58: 1681-1686. DOI: 10.1109/Ted.2011.2131653  0.71
2011 Mao W, Yang C, Hao Y, Ma X, Wang C, Zhang J, Liu H, Bi Z, Xu S, Yang L, Yang L, Zhang K, Zhang N, Pei Y. The effect of a HfO 2 insulator on the improvement of breakdown voltage in field-plated GaN-based HEMT Chinese Physics B. 20: 097203. DOI: 10.1088/1674-1056/20/9/097203  0.302
2011 Arehart AR, Malonis AC, Poblenz C, Pei Y, Speck JS, Mishra UK, Ringel SA. Next generation defect characterization in nitride HEMTs Physica Status Solidi (C) Current Topics in Solid State Physics. 8: 2242-2244. DOI: 10.1002/Pssc.201000955  0.473
2010 Yang CK, Roblin P, Groote FD, Ringel SA, Rajan S, Teyssier JP, Poblenz C, Pei Y, Speck J, Mishra UK. Pulsed-IV pulsed-RF cold-FET parasitic extraction of biased AlGaN/GaN HEMTs using large signal network analyzer Ieee Transactions On Microwave Theory and Techniques. 58: 1077-1088. DOI: 10.1109/Tmtt.2010.2045452  0.657
2010 Zomorrodian V, Pei Y, Mishra UK, York RA. High-efficiency Class e MMIC power amplifiers at 4.0 GHz using AIGaN/GaN HEMT technology Ieee Mtt-S International Microwave Symposium Digest. 513-516. DOI: 10.1109/MWSYM.2010.5514695  0.315
2010 Nidhi, Dasgupta S, Pei Y, Swenson BL, Keller S, Speck JS, Mishra UK. N-polar GaN/AlN MIS-HEMT for ka-band power applications Ieee Electron Device Letters. 31: 1437-1439. DOI: 10.1109/Led.2010.2078791  0.821
2010 Tapajna M, Simms RJT, Pei Y, Mishra UK, Kuball M. Integrated Optical and Electrical Analysis: Identifying Location and Properties of Traps in AlGaN/GaN HEMTs During Electrical Stress Ieee Electron Device Letters. 31: 662-664. DOI: 10.1109/Led.2010.2047092  0.391
2010 Simms RJT, Gao F, Pei Y, Palacios T, Mishra UK, Kuball M. Electric field distribution in AlGaN/GaN high electron mobility transistors investigated by electroluminescence Applied Physics Letters. 97: 33502. DOI: 10.1063/1.3464959  0.441
2010 Chen Z, Pei Y, Chu R, Newman S, Brown D, Chung R, Keller S, DenBaars SP, Nakamura S, Mishra UK. Growth and characterization of AlGaN/GaN/AlGaN field effect transistors Physica Status Solidi (C). 7: 2404-2407. DOI: 10.1002/Pssc.200983890  0.716
2010 Zomorrodian V, Pei Y, Mishra UK, York RA. A scalable EE_HEMT based large signal model for multi-finger AlGaN/GaN HEMTs for linear and non-linear circuit design Physica Status Solidi (C) Current Topics in Solid State Physics. 7: 2450-2454. DOI: 10.1002/Pssc.200983877  0.334
2009 Chu R, Chen Z, Pei Y, Newman S, DenBaars SP, Mishra UK. MOCVD-Grown AlGaN Buffer GaN HEMTs With V-Gates for Microwave Power Applications Ieee Electron Device Letters. 30: 910-912. DOI: 10.1109/Led.2009.2026659  0.726
2009 Wong MH, Pei Y, Brown DF, Keller S, Speck JS, Mishra UK. High-Performance N-Face GaN Microwave MIS-HEMTs With > 70% Power-Added Efficiency Ieee Electron Device Letters. 30: 802-804. DOI: 10.1109/Led.2009.2024443  0.616
2009 Kolluri S, Pei Y, Keller S, Denbaars SP, Mishra UK. RF Performance of N-Polar AlGaN/GaN MIS-HEMTs Grown by MOCVD on Sapphire Substrate Ieee Electron Device Letters. 30: 584-586. DOI: 10.1109/Led.2009.2018708  0.785
2009 Pei Y, Vampola KJ, Chen Z, Chu R, DenBaars SP, Mishra UK. AlGaN/GaN HEMT with a transparent gate electrode Ieee Electron Device Letters. 30: 439-441. DOI: 10.1109/Led.2009.2017282  0.649
2009 Pei Y, Chen Z, Brown D, Keller S, Denbaars S, Mishra U. Deep-Submicrometer AlGaN/GaN HEMTs With Slant Field Plates Ieee Electron Device Letters. 30: 328-330. DOI: 10.1109/Led.2009.2014790  0.532
2009 Pei Y, Rajan S, Higashiwaki M, Chen Z, DenBaars SP, Mishra UK. Effect of Dielectric Thickness on Power Performance of AlGaN/GaN HEMTs Ieee Electron Device Letters. 30: 313-315. DOI: 10.1109/Led.2009.2012444  0.69
2009 Cuerdo R, Pei Y, Chen Z, Keller S, DenBaars S, Calle F, Mishra U. The Kink Effect at Cryogenic Temperatures in Deep Submicron AlGaN/GaN HEMTs Ieee Electron Device Letters. 30: 209-212. DOI: 10.1109/Led.2008.2011289  0.471
2009 Wong MH, Pei Y, Speck JS, Mishra UK. High power N-face GaN high electron mobility transistors grown by molecular beam epitaxy with optimization of AlN nucleation Applied Physics Letters. 94: 182103. DOI: 10.1063/1.3130228  0.557
2009 Chen Z, Pei Y, Newman S, Brown D, Chung R, Keller S, DenBaars SP, Nakamura S, Mishra UK. Growth of AlGaN/GaN/AlGaN double heterojunction field-effect transistors and the observation of a compositional pulling effect Applied Physics Letters. 94: 171117. DOI: 10.1063/1.3129865  0.557
2009 Higashiwaki M, Chen Z, Chu R, Pei Y, Keller S, Mishra UK, Hirose N, Matsui T, Mimura T. A comparative study of effects of SiNx deposition method on AlGaN/GaN heterostructure field-effect transistors Applied Physics Letters. 94: 53513. DOI: 10.1063/1.3079798  0.622
2008 Chu R, Poblenz C, Wong MH, Dasgupta S, Rajan S, Pei Y, Recht F, Shen L, Speck JS, Mishra UK. Improved performance of plasma-assisted molecular beam epitaxy grown AlGaN/GaN high electron mobility transistors with gate-recess and CF 4-treatment Applied Physics Express. 1: 0611011-0611013. DOI: 10.1143/Apex.1.061101  0.788
2008 Pei Y, Chu R, Shen L, Fichtenbaum NA, Chen Z, Brown D, Keller S, Denbaars SP, Mishra UK. Effect of Al composition and gate recess on power performance of AlGaN/ GaN high-electron mobility transistors Ieee Electron Device Letters. 29: 300-302. DOI: 10.1109/Led.2008.917936  0.819
2008 Wong MH, Pei Y, Chu R, Rajan S, Swenson BL, Brown DF, Keller S, DenBaars SP, Speck JS, Mishra UK. N-face metal-insulator-semiconductor high-electron-mobility transistors with AlN back-barrier Ieee Electron Device Letters. 29: 1101-1104. DOI: 10.1109/Led.2008.2003543  0.837
2008 Wong MH, Pei Y, Chu R, Rajan S, Swenson BL, Brown DF, Keller S, Denbaars SP, Speck JS, Mishra UK. Power performance of MBE-grown N-face high electron mobility transistors with AIN back barrier Device Research Conference - Conference Digest, Drc. 201-202. DOI: 10.1109/DRC.2008.4800802  0.78
2008 Pei Y, Poblenz C, Corrion AL, Chu R, Shen L, Speck JS, Mishra UK. X- and Ka-band power performance of AlGaN/GaN HEMTs grown by ammonia-MBE Electronics Letters. 44: 598-599. DOI: 10.1049/El:20080669  0.771
2008 Cuerdo R, Pei Y, Recht F, Fichtenbaum N, Keller S, Denbaars SP, Calle F, Mishra UK. Temperature-dependent high-frequency performance of deep submicron AlGaN/GaN HEMTs Physica Status Solidi (C) Current Topics in Solid State Physics. 5: 2994-2997. DOI: 10.1002/Pssc.200779240  0.757
2007 Pei Y, Shen L, Palacios T, Fichtenbaum NA, McCarthy LS, Keller S, DenBaars SP, Mishra UK. Study of the n+ GaN cap in AlGaN/GaN high electron mobility transistors with reduced source-drain resistance Japanese Journal of Applied Physics, Part 2: Letters. 46: L842-L844. DOI: 10.1143/Jjap.46.L842  0.792
2007 Pei Y, Chu R, Fichtenbaum NA, Chen Z, Brown D, Shen L, Keller S, DenBaars SP, Mishra UK. Recessed slant gate AlGaN/GaN high electron mobility transistors with 20.9 W/mm at 10 GHz Japanese Journal of Applied Physics, Part 2: Letters. 46: L1087-L1089. DOI: 10.1143/Jjap.46.L1087  0.841
2007 Shen L, Pei Y, McCarthy L, Poblenz C, Corrion A, Fichtenbaum N, Keller S, Denbaars SP, Speck JS, Mishra UK. Deep-recessed GaN HEMTs using selective etch technology exhibiting high microwave performance without surface passivation Ieee Mtt-S International Microwave Symposium Digest. 623-626. DOI: 10.1109/MWSYM.2007.379978  0.814
2007 Pei Y, Suh C, Chu R, Recht F, Shen L, Corrion A, Poblenz C, Speck J, Mishra UK. AlGaN/GaN HEMT with high PAE and breakdown voltage grown by ammonia MBE 65th Drc Device Research Conference. 129-130. DOI: 10.1109/DRC.2007.4373683  0.789
2007 Wong MH, Pei Y, Palacios T, Shen L, Chakraborty A, McCarthy LS, Keller S, Denbaars SP, Speck JS, Mishra UK. Low nonalloyed Ohmic contact resistance to nitride high electron mobility transistors using N-face growth Applied Physics Letters. 91. DOI: 10.1063/1.2820381  0.8
2007 Pei Y, Recht F, Fichtenbaum N, Keller S, Denbaars SP, Mishra UK. Deep submicron AlGaN/GaN HEMTs with ion implanted source/drain regions and non-alloyed ohmic contacts Electronics Letters. 43: 1466-1467. DOI: 10.1049/El:20072969  0.783
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