Year |
Citation |
Score |
2013 |
Sasikumar A, Arehart AR, Martin-Horcajo S, Romero MF, Pei Y, Brown D, Recht F, Di Forte-Poisson MA, Calle F, Tadjer MJ, Keller S, Denbaars SP, Mishra UK, Ringel SA. Direct comparison of traps in InAlN/GaN and AlGaN/GaN high electron mobility transistors using constant drain current deep level transient spectroscopy Applied Physics Letters. 103. DOI: 10.1063/1.4813862 |
0.809 |
|
2013 |
Arehart AR, Sasikumar A, Rajan S, Via GD, Poling B, Winningham B, Heller ER, Brown D, Pei Y, Recht F, Mishra UK, Ringel SA. Direct observation of 0.57 eV trap-related RF output power reduction in AlGaN/GaN high electron mobility transistors Solid-State Electronics. 80: 19-22. DOI: 10.1016/J.Sse.2012.09.010 |
0.805 |
|
2012 |
Cardwell DW, Arehart AR, Poblenz C, Pei Y, Speck JS, Mishra UK, Ringel SA, Pelz JP. Nm-scale measurements of fast surface potential transients in an AlGaN/GaN high electron mobility transistor Applied Physics Letters. 100. DOI: 10.1063/1.4714536 |
0.622 |
|
2012 |
Möreke J, Ťapajna M, Uren MJ, Pei Y, Mishra UK, Kuball M. Effects of gate shaping and consequent process changes on AlGaN/GaN HEMT reliability Physica Status Solidi (a) Applications and Materials Science. 209: 2646-2652. DOI: 10.1002/Pssa.201228395 |
0.646 |
|
2011 |
Higashiwaki M, Pei Y, Chu R, Mishra UK. Effects of Barrier Thinning on Small-Signal and 30-GHz Power Characteristics of AlGaN/GaN Heterostructure Field-Effect Transistors Ieee Transactions On Electron Devices. 58: 1681-1686. DOI: 10.1109/Ted.2011.2131653 |
0.71 |
|
2011 |
Mao W, Yang C, Hao Y, Ma X, Wang C, Zhang J, Liu H, Bi Z, Xu S, Yang L, Yang L, Zhang K, Zhang N, Pei Y. The effect of a HfO
2
insulator on the improvement of breakdown voltage in field-plated GaN-based HEMT Chinese Physics B. 20: 097203. DOI: 10.1088/1674-1056/20/9/097203 |
0.302 |
|
2011 |
Arehart AR, Malonis AC, Poblenz C, Pei Y, Speck JS, Mishra UK, Ringel SA. Next generation defect characterization in nitride HEMTs Physica Status Solidi (C) Current Topics in Solid State Physics. 8: 2242-2244. DOI: 10.1002/Pssc.201000955 |
0.473 |
|
2010 |
Yang CK, Roblin P, Groote FD, Ringel SA, Rajan S, Teyssier JP, Poblenz C, Pei Y, Speck J, Mishra UK. Pulsed-IV pulsed-RF cold-FET parasitic extraction of biased AlGaN/GaN HEMTs using large signal network analyzer Ieee Transactions On Microwave Theory and Techniques. 58: 1077-1088. DOI: 10.1109/Tmtt.2010.2045452 |
0.657 |
|
2010 |
Zomorrodian V, Pei Y, Mishra UK, York RA. High-efficiency Class e MMIC power amplifiers at 4.0 GHz using AIGaN/GaN HEMT technology Ieee Mtt-S International Microwave Symposium Digest. 513-516. DOI: 10.1109/MWSYM.2010.5514695 |
0.315 |
|
2010 |
Nidhi, Dasgupta S, Pei Y, Swenson BL, Keller S, Speck JS, Mishra UK. N-polar GaN/AlN MIS-HEMT for ka-band power applications Ieee Electron Device Letters. 31: 1437-1439. DOI: 10.1109/Led.2010.2078791 |
0.821 |
|
2010 |
Tapajna M, Simms RJT, Pei Y, Mishra UK, Kuball M. Integrated Optical and Electrical Analysis: Identifying Location and Properties of Traps in AlGaN/GaN HEMTs During Electrical Stress Ieee Electron Device Letters. 31: 662-664. DOI: 10.1109/Led.2010.2047092 |
0.391 |
|
2010 |
Simms RJT, Gao F, Pei Y, Palacios T, Mishra UK, Kuball M. Electric field distribution in AlGaN/GaN high electron mobility transistors investigated by electroluminescence Applied Physics Letters. 97: 33502. DOI: 10.1063/1.3464959 |
0.441 |
|
2010 |
Chen Z, Pei Y, Chu R, Newman S, Brown D, Chung R, Keller S, DenBaars SP, Nakamura S, Mishra UK. Growth and characterization of AlGaN/GaN/AlGaN field effect transistors Physica Status Solidi (C). 7: 2404-2407. DOI: 10.1002/Pssc.200983890 |
0.716 |
|
2010 |
Zomorrodian V, Pei Y, Mishra UK, York RA. A scalable EE_HEMT based large signal model for multi-finger AlGaN/GaN HEMTs for linear and non-linear circuit design Physica Status Solidi (C) Current Topics in Solid State Physics. 7: 2450-2454. DOI: 10.1002/Pssc.200983877 |
0.334 |
|
2009 |
Chu R, Chen Z, Pei Y, Newman S, DenBaars SP, Mishra UK. MOCVD-Grown AlGaN Buffer GaN HEMTs With V-Gates for Microwave Power Applications Ieee Electron Device Letters. 30: 910-912. DOI: 10.1109/Led.2009.2026659 |
0.726 |
|
2009 |
Wong MH, Pei Y, Brown DF, Keller S, Speck JS, Mishra UK. High-Performance N-Face GaN Microwave MIS-HEMTs With > 70% Power-Added Efficiency Ieee Electron Device Letters. 30: 802-804. DOI: 10.1109/Led.2009.2024443 |
0.616 |
|
2009 |
Kolluri S, Pei Y, Keller S, Denbaars SP, Mishra UK. RF Performance of N-Polar AlGaN/GaN MIS-HEMTs Grown by MOCVD on Sapphire Substrate Ieee Electron Device Letters. 30: 584-586. DOI: 10.1109/Led.2009.2018708 |
0.785 |
|
2009 |
Pei Y, Vampola KJ, Chen Z, Chu R, DenBaars SP, Mishra UK. AlGaN/GaN HEMT with a transparent gate electrode Ieee Electron Device Letters. 30: 439-441. DOI: 10.1109/Led.2009.2017282 |
0.649 |
|
2009 |
Pei Y, Chen Z, Brown D, Keller S, Denbaars S, Mishra U. Deep-Submicrometer AlGaN/GaN HEMTs With Slant Field Plates Ieee Electron Device Letters. 30: 328-330. DOI: 10.1109/Led.2009.2014790 |
0.532 |
|
2009 |
Pei Y, Rajan S, Higashiwaki M, Chen Z, DenBaars SP, Mishra UK. Effect of Dielectric Thickness on Power Performance of AlGaN/GaN HEMTs Ieee Electron Device Letters. 30: 313-315. DOI: 10.1109/Led.2009.2012444 |
0.69 |
|
2009 |
Cuerdo R, Pei Y, Chen Z, Keller S, DenBaars S, Calle F, Mishra U. The Kink Effect at Cryogenic Temperatures in Deep Submicron AlGaN/GaN HEMTs Ieee Electron Device Letters. 30: 209-212. DOI: 10.1109/Led.2008.2011289 |
0.471 |
|
2009 |
Wong MH, Pei Y, Speck JS, Mishra UK. High power N-face GaN high electron mobility transistors grown by molecular beam epitaxy with optimization of AlN nucleation Applied Physics Letters. 94: 182103. DOI: 10.1063/1.3130228 |
0.557 |
|
2009 |
Chen Z, Pei Y, Newman S, Brown D, Chung R, Keller S, DenBaars SP, Nakamura S, Mishra UK. Growth of AlGaN/GaN/AlGaN double heterojunction field-effect transistors and the observation of a compositional pulling effect Applied Physics Letters. 94: 171117. DOI: 10.1063/1.3129865 |
0.557 |
|
2009 |
Higashiwaki M, Chen Z, Chu R, Pei Y, Keller S, Mishra UK, Hirose N, Matsui T, Mimura T. A comparative study of effects of SiNx deposition method on AlGaN/GaN heterostructure field-effect transistors Applied Physics Letters. 94: 53513. DOI: 10.1063/1.3079798 |
0.622 |
|
2008 |
Chu R, Poblenz C, Wong MH, Dasgupta S, Rajan S, Pei Y, Recht F, Shen L, Speck JS, Mishra UK. Improved performance of plasma-assisted molecular beam epitaxy grown AlGaN/GaN high electron mobility transistors with gate-recess and CF 4-treatment Applied Physics Express. 1: 0611011-0611013. DOI: 10.1143/Apex.1.061101 |
0.788 |
|
2008 |
Pei Y, Chu R, Shen L, Fichtenbaum NA, Chen Z, Brown D, Keller S, Denbaars SP, Mishra UK. Effect of Al composition and gate recess on power performance of AlGaN/ GaN high-electron mobility transistors Ieee Electron Device Letters. 29: 300-302. DOI: 10.1109/Led.2008.917936 |
0.819 |
|
2008 |
Wong MH, Pei Y, Chu R, Rajan S, Swenson BL, Brown DF, Keller S, DenBaars SP, Speck JS, Mishra UK. N-face metal-insulator-semiconductor high-electron-mobility transistors with AlN back-barrier Ieee Electron Device Letters. 29: 1101-1104. DOI: 10.1109/Led.2008.2003543 |
0.837 |
|
2008 |
Wong MH, Pei Y, Chu R, Rajan S, Swenson BL, Brown DF, Keller S, Denbaars SP, Speck JS, Mishra UK. Power performance of MBE-grown N-face high electron mobility transistors with AIN back barrier Device Research Conference - Conference Digest, Drc. 201-202. DOI: 10.1109/DRC.2008.4800802 |
0.78 |
|
2008 |
Pei Y, Poblenz C, Corrion AL, Chu R, Shen L, Speck JS, Mishra UK. X- and Ka-band power performance of AlGaN/GaN HEMTs grown by ammonia-MBE Electronics Letters. 44: 598-599. DOI: 10.1049/El:20080669 |
0.771 |
|
2008 |
Cuerdo R, Pei Y, Recht F, Fichtenbaum N, Keller S, Denbaars SP, Calle F, Mishra UK. Temperature-dependent high-frequency performance of deep submicron AlGaN/GaN HEMTs Physica Status Solidi (C) Current Topics in Solid State Physics. 5: 2994-2997. DOI: 10.1002/Pssc.200779240 |
0.757 |
|
2007 |
Pei Y, Shen L, Palacios T, Fichtenbaum NA, McCarthy LS, Keller S, DenBaars SP, Mishra UK. Study of the n+ GaN cap in AlGaN/GaN high electron mobility transistors with reduced source-drain resistance Japanese Journal of Applied Physics, Part 2: Letters. 46: L842-L844. DOI: 10.1143/Jjap.46.L842 |
0.792 |
|
2007 |
Pei Y, Chu R, Fichtenbaum NA, Chen Z, Brown D, Shen L, Keller S, DenBaars SP, Mishra UK. Recessed slant gate AlGaN/GaN high electron mobility transistors with 20.9 W/mm at 10 GHz Japanese Journal of Applied Physics, Part 2: Letters. 46: L1087-L1089. DOI: 10.1143/Jjap.46.L1087 |
0.841 |
|
2007 |
Shen L, Pei Y, McCarthy L, Poblenz C, Corrion A, Fichtenbaum N, Keller S, Denbaars SP, Speck JS, Mishra UK. Deep-recessed GaN HEMTs using selective etch technology exhibiting high microwave performance without surface passivation Ieee Mtt-S International Microwave Symposium Digest. 623-626. DOI: 10.1109/MWSYM.2007.379978 |
0.814 |
|
2007 |
Pei Y, Suh C, Chu R, Recht F, Shen L, Corrion A, Poblenz C, Speck J, Mishra UK. AlGaN/GaN HEMT with high PAE and breakdown voltage grown by ammonia MBE 65th Drc Device Research Conference. 129-130. DOI: 10.1109/DRC.2007.4373683 |
0.789 |
|
2007 |
Wong MH, Pei Y, Palacios T, Shen L, Chakraborty A, McCarthy LS, Keller S, Denbaars SP, Speck JS, Mishra UK. Low nonalloyed Ohmic contact resistance to nitride high electron mobility transistors using N-face growth Applied Physics Letters. 91. DOI: 10.1063/1.2820381 |
0.8 |
|
2007 |
Pei Y, Recht F, Fichtenbaum N, Keller S, Denbaars SP, Mishra UK. Deep submicron AlGaN/GaN HEMTs with ion implanted source/drain regions and non-alloyed ohmic contacts Electronics Letters. 43: 1466-1467. DOI: 10.1049/El:20072969 |
0.783 |
|
Show low-probability matches. |