| Year |
Citation |
Score |
| 2020 |
Ma Y, Hunt D, Meng K, Erickson T, Yang F, Barral MA, Ferrari V, Smith AR. Local strain-dependent electronic structure and perpendicular magnetic anisotropy of a MnGaN 2D magnetic monolayer Physical Review Materials. 4: 64006. DOI: 10.1103/Physrevmaterials.4.064006 |
0.347 |
|
| 2020 |
Alam K, Meng K, Ponce-Pérez R, Cocoletzi GH, Takeuchi N, Foley A, Yang F, Smith AR. Exchange bias and exchange spring effects in Fe/CrN bilayers Journal of Physics D. 53: 125001. DOI: 10.1088/1361-6463/Ab6147 |
0.354 |
|
| 2019 |
Corbett JP, Guerrero-Sanchez J, Gallagher JC, Mandru A-, Richard AL, Ingram DC, Yang F, Takeuchi N, Smith AR. Dislocation structures, interfacing, and magnetism in the L10− MnGa on η⊥− Mn3N2 bilayer Journal of Vacuum Science and Technology. 37: 31102. DOI: 10.1116/1.5081960 |
0.424 |
|
| 2019 |
Ventura-Macias E, Guerrero-Sánchez J, Corbett JP, Smith AR, Takeuchi N. Nitrogen-induced reconstructions on the Cr(001) surface Applied Surface Science. 484: 578-586. DOI: 10.1016/J.Apsusc.2019.04.126 |
0.449 |
|
| 2018 |
Corbett JP, Smith AR. Applying a difference ratio method in spin-polarized scanning tunneling microscopy to determine crystalline anisotropies and antiferromagnetic spin alignment in Cr(0 0 1) c(2 × 2) Journal of Magnetism and Magnetic Materials. 465: 626-633. DOI: 10.1016/J.Jmmm.2018.06.037 |
0.423 |
|
| 2018 |
Ponce-Pérez R, Alam K, Cocoletzi GH, Takeuchi N, Smith AR. Structural, electronic, and magnetic properties of the CrN (0 0 1) surface: First-principles studies Applied Surface Science. 454: 350-357. DOI: 10.1016/J.Apsusc.2018.05.118 |
0.464 |
|
| 2017 |
Ma Y, Chinchore AV, Smith AR, Barral MA, Ferrari V. A Two-Dimensional Manganese Gallium Nitride Surface Structure Showing Ferromagnetism at Room Temperature. Nano Letters. PMID 29227660 DOI: 10.1021/Acs.Nanolett.7B03721 |
0.784 |
|
| 2017 |
Alam K, Disseler SM, Ratcliff WD, Borchers JA, Ponce-Pérez R, Cocoletzi GH, Takeuchi N, Foley A, Richard A, Ingram DC, Smith AR. Structural and magnetic phase transitions in chromium nitride thin films grown by rf nitrogen plasma molecular beam epitaxy Physical Review B. 96. DOI: 10.1103/Physrevb.96.104433 |
0.44 |
|
| 2017 |
Foley A, Corbett J, Khan A, Richard AL, Ingram DC, Smith AR, Zhao L, Gallagher JC, Yang F. Contribution from Ising domains overlapping out-of-plane to perpendicular magnetic anisotropy in Mn4N thin films on MgO(001) Journal of Magnetism and Magnetic Materials. 439: 236-244. DOI: 10.1016/J.Jmmm.2017.03.079 |
0.412 |
|
| 2017 |
Corbett JP, Guerrero-Sanchez J, Richard AL, Ingram DC, Takeuchi N, Smith AR. Surface structures of L1 0 -MnGa (001) by scanning tunneling microscopy and first-principles theory Applied Surface Science. 422: 985-989. DOI: 10.1016/J.Apsusc.2017.06.030 |
0.497 |
|
| 2017 |
Garcia-Diaz R, Cocoletzi GH, Mandru A, Wang K, Smith AR, Takeuchi N. Structural, electronic and magnetic properties of the MnGa(111)-1 × 2 and 2 × 2 reconstructions: Spin polarized first principles total energy calculations Applied Surface Science. 419: 286-293. DOI: 10.1016/J.Apsusc.2017.04.241 |
0.642 |
|
| 2016 |
Mandru AO, Corbett JP, Richard AL, Gallagher J, Meng KY, Ingram DC, Yang F, Smith AR. Magnetostrictive iron gallium thin films grown onto antiferromagnetic manganese nitride: Structure and magnetism Applied Physics Letters. 109. DOI: 10.1063/1.4963761 |
0.424 |
|
| 2016 |
Foley A, Corbett J, Richard AL, Alam K, Ingram DC, Smith AR. Structural and magnetic properties of ferrimagnetic ϵ-phase Mn4N and antiferromagnetic ζ-phase Mn10N thin films on MgO(001) Journal of Crystal Growth. 446: 60-67. DOI: 10.1016/J.Jcrysgro.2016.04.029 |
0.456 |
|
| 2016 |
Mandru AO, Corbett JP, Lucy JM, Richard AL, Yang F, Ingram DC, Smith AR. Structure and magnetism in Ga-rich MnGa/GaN thin films and unexpected giant perpendicular anisotropy in the ultra-thin film limit Applied Surface Science. 367: 312-319. DOI: 10.1016/J.Apsusc.2016.01.105 |
0.447 |
|
| 2016 |
Guerrero-Sánchez J, Mandru AO, Takeuchi N, H. Cocoletzi G, Smith AR. Understanding the stability of Fe incorporation within Mn3N2(0 0 1) surfaces: An ab-initio study Applied Surface Science. 363: 651-658. DOI: 10.1016/J.Apsusc.2015.11.263 |
0.404 |
|
| 2015 |
Corbett JP, Pandya SG, Mandru AO, Pak J, Kordesch ME, Smith AR. Note: advancement in tip etching for preparation of tunable size scanning tunneling microscopy tips. The Review of Scientific Instruments. 86: 026104. PMID 25725897 DOI: 10.1063/1.4907706 |
0.304 |
|
| 2015 |
Alam K, Foley A, Smith AR. Native gallium adatoms discovered on atomically-smooth gallium nitride surfaces at low temperature. Nano Letters. 15: 2079-85. PMID 25656811 DOI: 10.1021/Nl5049252 |
0.48 |
|
| 2015 |
Alhashem ZH, Mandru AO, Pak J, Smith AR. Molecular beam epitaxial growth and scanning tunneling microscopy studies of the gallium rich trench line structure on N-polar w -GaN(000 1 ¯) Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 33. DOI: 10.1116/1.4927163 |
0.477 |
|
| 2015 |
Mandru AO, Pak J, Smith AR, Guerrero-Sanchez J, Takeuchi N. Interface formation for a ferromagnetic/antiferromagnetic bilayer system studied by scanning tunneling microscopy and first-principles theory Physical Review B - Condensed Matter and Materials Physics. 91. DOI: 10.1103/Physrevb.91.094433 |
0.317 |
|
| 2015 |
Guerrero-Sánchez J, Mandru AO, Wang K, Takeuchi N, Cocoletzi GH, Smith AR. Structural, electronic and magnetic properties of Mn3N2(0 0 1) surfaces Applied Surface Science. 355: 623-630. DOI: 10.1016/J.Apsusc.2015.06.139 |
0.636 |
|
| 2015 |
Pak J, Mandru AO, Chinchore A, Smith AR. Surface structure of manganese gallium quantum height islands on wurtzite GaN(0001¯) studied by scanning tunneling microscopy Applied Physics a: Materials Science and Processing. DOI: 10.1007/S00339-015-9272-3 |
0.804 |
|
| 2014 |
Lin W, Foley A, Alam K, Wang K, Liu Y, Chen T, Pak J, Smith AR. Facility for low-temperature spin-polarized-scanning tunneling microscopy studies of magnetic/spintronic materials prepared in situ by nitride molecular beam epitaxy. The Review of Scientific Instruments. 85: 043702. PMID 24784613 DOI: 10.1063/1.4870276 |
0.653 |
|
| 2014 |
Mandru A, Diaz RG, Wang K, Cooper K, Haider M, Ingram DC, Takeuchi N, Smith AR. Publisher's Note: “Heteroepitaxial growth and surface structure of L10-MnGa(111) ultra-thin films on GaN(0001)” [Appl. Phys. Lett. 103, 161606 (2013)] Applied Physics Letters. 105: 139902. DOI: 10.1063/1.4896907 |
0.598 |
|
| 2014 |
Lin W, Mandru AO, Smith AR, Takeuchi N, Al-Brithen HAH. Iron on GaN(0001) pseudo-1×1 (1 + 1/12) investigated by scanning tunneling microscopy and first-principles theory Applied Physics Letters. 104. DOI: 10.1063/1.4874607 |
0.407 |
|
| 2013 |
Chinchore AV, Wang K, Shi M, Mandru A, Liu Y, Haider M, Smith AR, Ferrari V, Barral MA, Ordejón P. Manganese 3×3 and √3×√3-R30 â̂̃ structures and structural phase transition on w-GaN(0001̄) studied by scanning tunneling microscopy and first-principles theory Physical Review B - Condensed Matter and Materials Physics. 87. DOI: 10.1103/Physrevb.87.165426 |
0.815 |
|
| 2013 |
Mandru A, Garcia Diaz R, Wang K, Cooper K, Haider M, Ingram DC, Takeuchi N, Smith AR. Heteroepitaxial growth and surface structure of L10-MnGa(111) ultra-thin films on GaN(0001) Applied Physics Letters. 103: 161606. DOI: 10.1063/1.4826203 |
0.653 |
|
| 2012 |
Wang K, Smith AR. Three-dimensional spin mapping of antiferromagnetic nanopyramids having spatially alternating surface anisotropy at room temperature. Nano Letters. 12: 5443-7. PMID 22280371 DOI: 10.1021/Nl204192N |
0.583 |
|
| 2012 |
Shi M, Chinchore A, Wang K, Mandru A, Liu Y, Smith AR. Formation of manganese δ-doped atomic layer in wurtzite GaN Journal of Applied Physics. 112: 053517. DOI: 10.1063/1.4750034 |
0.829 |
|
| 2012 |
Chinchore A, Wang K, Shi M, Liu Y, Smith AR. Spontaneous formation of quantum height manganese gallium islands and atomic chains on N-polar gallium nitride(0001¯) Applied Physics Letters. 100: 061602. DOI: 10.1063/1.3682487 |
0.814 |
|
| 2011 |
Wang K, Lin W, Chinchore AV, Liu Y, Smith AR. A modular designed ultra-high-vacuum spin-polarized scanning tunneling microscope with controllable magnetic fields for investigating epitaxial thin films. The Review of Scientific Instruments. 82: 053703. PMID 21639503 DOI: 10.1063/1.3585986 |
0.812 |
|
| 2011 |
Constantin C, Chinchore A, Smith AR. Reflection high energy electron diffraction and atomic force microscopy studies of Mn xSc (1-x) alloys grown on MgO(001) substrates by molecular beam epitaxy Materials Research Society Symposium Proceedings. 1295: 261-266. DOI: 10.1557/Opl.2011.458 |
0.824 |
|
| 2011 |
Constantin C, Wang K, Chinchore A, Chia HJ, Markert J, Smith AR. Structural, magnetic and electronic properties of dilute MnScN(001) grown by RF nitrogen plasma molecular beam epitaxy Materials Research Society Symposium Proceedings. 1290: 22-27. DOI: 10.1557/Opl.2011.178 |
0.799 |
|
| 2011 |
Wang K, Takeuchi N, Chinchore AV, Lin W, Liu Y, Smith AR. Two-dimensional Mn structure on the GaN growth surface and evidence for room-temperature spin ordering Physical Review B - Condensed Matter and Materials Physics. 83. DOI: 10.1103/Physrevb.83.165407 |
0.812 |
|
| 2011 |
Wang K, Lu E, Knepper JW, Yang F, Smith AR. Structural controlled magnetic anisotropy in Heusler L10−MnGa epitaxial thin films Applied Physics Letters. 98: 162507. DOI: 10.1063/1.3582244 |
0.593 |
|
| 2011 |
Liu YH, Wang K, Lin W, Chinchore A, Shi M, Pak J, Smith AR, Constantin C. The effect of growth parameters on CrN thin films grown by molecular beam epitaxy Thin Solid Films. 520: 90-94. DOI: 10.1016/J.Tsf.2011.06.052 |
0.818 |
|
| 2011 |
Wang K, Smith AR. Efficient kinematical simulation of reflection high-energy electron diffraction streak patterns for crystal surfaces Computer Physics Communications. 182: 2208-2212. DOI: 10.1016/J.Cpc.2011.04.023 |
0.591 |
|
| 2010 |
Pak J, Lin W, Wang K, Chinchore A, Shi M, Ingram DC, Smith AR, Sun K, Lucy JM, Hauser AJ, Yang FY. Growth of epitaxial iron nitride ultrathin film on zinc-blende gallium nitride Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 28: 536-540. DOI: 10.1116/1.3425805 |
0.809 |
|
| 2009 |
Constantin C, Jeongihm P, Wang K, Chinchore A, Meng S, Smith AR. Lattice Parameter Variation in ScGaN Alloy Thin Films on MgO(001) Grown by RF Plasma Molecular Beam Epitaxy Mrs Proceedings. 1202. DOI: 10.1557/Proc-1202-I05-25 |
0.814 |
|
| 2009 |
Constantin C, Wang K, Chinchore A, Chia H, Markert J, Smith AR. Magnetic and Electronic Properties of Fe0.1Sc0.9N/ScN(001)/MgO(001) Films Grown by Radio-Frequency Molecular Beam Epitaxy Mrs Proceedings. 1198. DOI: 10.1557/Proc-1198-E07-22 |
0.808 |
|
| 2009 |
Wang K, Chinchore A, Lin W, Ingram DC, Smith AR, Hauser AJ, Yang F. Epitaxial growth of ferromagnetic -phase manganese gallium on semiconducting scandium nitride (001) Journal of Crystal Growth. 311: 2265-2268. DOI: 10.1016/J.Jcrysgro.2009.02.033 |
0.819 |
|
| 2008 |
Wang K, Chinchore A, Lin W, Smith A, Sun K. Delta-phase manganese gallium on gallium nitride: a magnetically tunable spintronic system Mrs Proceedings. 1118. DOI: 10.1557/Proc-1118-K06-06 |
0.83 |
|
| 2008 |
Chinchore A, Wang K, Lin W, Pak J, Smith AR. Atomic layer structure of manganese atoms on wurtzite gallium nitride (0001¯) Applied Physics Letters. 93: 181908. DOI: 10.1063/1.3006434 |
0.805 |
|
| 2008 |
Lin W, Pak J, Ingram DC, Smith AR. Molecular beam epitaxial growth of zinc-blende FeN(1 1 1) on wurtzite GaN(0 0 0 1) Journal of Alloys and Compounds. 463: 257-262. DOI: 10.1016/J.Jallcom.2007.10.029 |
0.47 |
|
| 2006 |
Lu E, Ingram DC, Smith AR, Knepper JW, Yang FY. Reconstruction control of magnetic properties during epitaxial growth of ferromagnetic Mn3-deltaGa on Wurtzite GaN(0001). Physical Review Letters. 97: 146101. PMID 17155269 DOI: 10.1103/Physrevlett.97.146101 |
0.51 |
|
| 2006 |
Yang R, Yang H, Smith AR, Dick A, Neugebauer J. Energy-dependent contrast in atomic-scale spin-polarized scanning tunneling microscopy ofMn3N2(010): Experiment and first-principles theory Physical Review B. 74. DOI: 10.1103/Physrevb.74.115409 |
0.389 |
|
| 2006 |
Haider MB, Yang R, Constantin C, Lu E, Smith AR, Al-Brithen HAH. Surface reconstructions of cubic gallium nitride (001) grown by radio frequency nitrogen plasma molecular beam epitaxy under gallium-rich conditions Journal of Applied Physics. 100: 083516. DOI: 10.1063/1.2356604 |
0.742 |
|
| 2006 |
Yang R, Yang H, Smith AR. Atomic-resolution study of Mn tetramer clusters using scanning tunneling microscopy Applied Physics Letters. 88: 173101. DOI: 10.1063/1.2197316 |
0.317 |
|
| 2005 |
Al-Brithen HA, Yang R, Haider MB, Constantin C, Lu E, Smith AR, Sandler N, Ordejón P. Scanning tunneling microscopy and surface simulation of zinc-blende GaN(001) intrinsic 4x reconstruction: linear gallium tetramers? Physical Review Letters. 95: 146102. PMID 16241671 DOI: 10.1103/Physrevlett.95.146102 |
0.798 |
|
| 2005 |
Smith AR, Yang R, Yang H, Dick A, Neugebauer J, Lambrecht WR. Recent advances in atomic-scale spin-polarized scanning tunneling microscopy. Microscopy Research and Technique. 66: 72-84. PMID 15880516 DOI: 10.1002/Jemt.20147 |
0.404 |
|
| 2005 |
Haider MB, Yang R, Al-Brithen H, Constantin C, Smith AR, Caruntu G, O'Connor CJ. Scanning Tunneling Microscopy Study of Cr-doped GaN Surface Grown by RF Plasma Molecular Beam Epitaxy Mrs Proceedings. 892. DOI: 10.1557/Proc-0892-Ff04-03 |
0.814 |
|
| 2005 |
Constantin C, Haider MB, Ingram D, Smith AR, Sandler N, Sun K, Ordejón P. Composition-dependent structural properties in ScGaN alloy films: A combined experimental and theoretical study Journal of Applied Physics. 98: 123501. DOI: 10.1063/1.2140889 |
0.676 |
|
| 2005 |
Haider MB, Yang R, Al-Brithen H, Constantin C, Ingram DC, Smith AR, Caruntu G, O’Connor CJ. Room temperature ferromagnetism in CrGaN: Dependence on growth conditions in rf N-plasma molecular beam epitaxy Journal of Crystal Growth. 285: 300-311. DOI: 10.1016/J.Jcrysgro.2005.08.047 |
0.821 |
|
| 2005 |
Yang R, Haider MB, Yang H, Al-Brithen H, Smith AR. Scanning tunneling microscopy study of the structural phase transformation in manganese nitride: θ-MnN → η-Mn 3 N 2 Applied Physics A. 81: 695-700. DOI: 10.1007/S00339-005-3230-4 |
0.804 |
|
| 2005 |
Haider MB, Constantin C, Al-Brithen H, Caruntu G, O'Connor CJ, Smith AR. Dependence of magnetic properties on the growth conditions of MnGaN grown by rf N plasma molecular beam epitaxy Physica Status Solidi (a). 202: 1135-1144. DOI: 10.1002/Pssa.200420004 |
0.8 |
|
| 2004 |
Constantin C, Al-Brithen H, Haider MB, Ingram D, Smith AR. Publisher's Note: ScGaN alloy growth by molecular beam epitaxy: Evidence for a metastable layered hexagonal phase [Phys. Rev. B70, 193309 (2004)] Physical Review B. 70. DOI: 10.1103/Physrevb.70.239902 |
0.794 |
|
| 2004 |
Constantin C, Al-Brithen H, Haider MB, Ingram D, Smith AR. ScGaNalloy growth by molecular beam epitaxy: Evidence for a metastable layered hexagonal phase Physical Review B. 70. DOI: 10.1103/Physrevb.70.193309 |
0.8 |
|
| 2004 |
Al-Brithen HA, Smith AR, Gall D. Surface and bulk electronic structure of ScN(001) investigated by scanning tunneling microscopy/spectroscopy and optical absorption spectroscopy Physical Review B - Condensed Matter and Materials Physics. 70: 045303-1-045303-8. DOI: 10.1103/Physrevb.70.045303 |
0.81 |
|
| 2004 |
Constantin C, Haider MB, Ingram D, Smith AR. Metal/semiconductor phase transition in chromium nitride(001) grown by rf-plasma-assisted molecular-beam epitaxy Applied Physics Letters. 85: 6371-6373. DOI: 10.1063/1.1836878 |
0.738 |
|
| 2004 |
Al-Brithen HA, Yang H, Smith AR. Incorporation of manganese into semiconducting ScN using radio frequency molecular beam epitaxy Journal of Applied Physics. 96: 3787-3792. DOI: 10.1063/1.1788842 |
0.823 |
|
| 2004 |
Smith AR, Yang R, Yang H, Lambrecht WR, Dick A, Neugebauer J. Aspects of spin-polarized scanning tunneling microscopy at the atomic scale: experiment, theory, and simulation Surface Science. 561: 154-170. DOI: 10.1016/J.Susc.2004.05.011 |
0.363 |
|
| 2004 |
Yang H, Yang R, Smith AR, Lambrecht WR. Atomic-scale structure of η-phase Mn3N2(010) studied by scanning tunneling microscopy and first-principles theory Surface Science. 548: 117-128. DOI: 10.1016/J.Susc.2003.10.055 |
0.41 |
|
| 2003 |
Smith AR, Yang R, Yang H. Bias-Voltage Dependence in Atomic-Scale Spin Polarized Scanning Tunneling Microscopy of Mn3N2 (010) Mrs Proceedings. 803. DOI: 10.1557/Proc-803-Gg1.2 |
0.413 |
|
| 2003 |
Haider MB, Constantin C, Al-Brithen H, Yang H, Trifan E, Ingram D, Smith AR, Kelly CV, Ijiri Y. Ga/N flux ratio influence on Mn incorporation, surface morphology, and lattice polarity during radio frequency molecular beam epitaxy of (Ga,Mn)N Journal of Applied Physics. 93: 5274-5281. DOI: 10.1063/1.1565511 |
0.825 |
|
| 2002 |
Yang H, Smith AR, Prikhodko M, Lambrecht WR. Atomic-scale spin-polarized scanning tunneling microscopy applied to Mn3N2(010). Physical Review Letters. 89: 226101. PMID 12485084 DOI: 10.1103/Physrevlett.89.226101 |
0.335 |
|
| 2002 |
Yang H, Al-Brithen H, Trifan E, Ingram DC, Smith AR. Crystalline phase and orientation control of manganese nitride grown on MgO(001) by molecular beam epitaxy Journal of Applied Physics. 91: 1053-1059. DOI: 10.1063/1.1425435 |
0.792 |
|
| 2002 |
AL-Brithen HAH, Trifan EM, Ingram DC, Smith AR, Gall D. Phase stability, nitrogen vacancies, growth mode, and surface structure of ScN(0 0 1) under Sc-rich conditions Journal of Crystal Growth. 242: 345-354. DOI: 10.1016/S0022-0248(02)01447-1 |
0.48 |
|
| 2001 |
Smith AR, AL-Brithen HAH, Ingram DC, Gall D. Molecular beam epitaxy control of the structural, optical, and electronic properties of ScN(001) Journal of Applied Physics. 90: 1809-1816. DOI: 10.1063/1.1388161 |
0.498 |
|
| 2001 |
Yang H, Al-Brithen H, Smith AR, Borchers JA, Cappelletti RL, Vaudin MD. Structural and magnetic properties of η-phase manganese nitride films grown by molecular-beam epitaxy Applied Physics Letters. 78: 3860-3862. DOI: 10.1063/1.1378800 |
0.826 |
|
| 2000 |
Ramachandran V, Lee CD, Feenstra RM, Smith AR, Greve DW. Comment on "Structures of GaN(0001)bf-(2x2), bf-(4x4), and bf-(5x5) surface reconstructions" Physical Review Letters. 84: 4014. PMID 11019263 DOI: 10.1103/Physrevlett.84.4014 |
0.666 |
|
| 2000 |
Feenstra RM, Chen H, Ramachandran V, Lee CD, Smith AR, Northrup JE, Zywietz T, Neugebauer J, Greve DW. SURFACE MORPHOLOGY OF GaN SURFACES DURING MOLECULAR BEAM EPITAXY Surface Review and Letters. 7: 601-606. DOI: 10.1142/S0218625X00000804 |
0.731 |
|
| 2000 |
Northrup JE, Neugebauer J, Feenstra RM, Smith AR. Structure of GaN(0001): The laterally contracted Ga bilayer model Physical Review B. 61: 9932-9935. DOI: 10.1103/Physrevb.61.9932 |
0.699 |
|
| 2000 |
Al-Brithen H, Smith AR. Molecular beam epitaxial growth of atomically smooth scandium nitride films Applied Physics Letters. 77: 2485-2487. DOI: 10.1063/1.1318227 |
0.827 |
|
| 2000 |
Feenstra RM, Chen H, Ramachandran V, Smith AR, Greve DW. Reconstructions of GaN and InGaN surfaces Applied Surface Science. 166: 165-172. DOI: 10.1016/S0169-4332(00)00401-3 |
0.729 |
|
| 2000 |
Ramachandran V, Lee CD, Feenstra RM, Smith AR, Northrup JE, Greve DW. Structure of clean and arsenic-covered GaN(0 0 0 1) surfaces Journal of Crystal Growth. 209: 355-363. DOI: 10.1016/S0022-0248(99)00570-9 |
0.719 |
|
| 1999 |
Chen H, Smith AR, Feenstra RM, Greve DW, Northrup JE. Scanning Tunneling Microscopy Studies of InGaN Growth by Molecular Beam Epitaxy Mrs Internet Journal of Nitride Semiconductor Research. 4: 858-863. DOI: 10.1557/S1092578300003537 |
0.71 |
|
| 1999 |
Ramachandran V, Smith AR, Feenstra RM, Greve DW. Temperature dependence of molecular beam epitaxy of GaN on SiC (0001) Journal of Vacuum Science and Technology. 17: 1289-1293. DOI: 10.1116/1.581810 |
0.702 |
|
| 1999 |
Smith A, Feenstra R, Greve D, Shin M, Skowronski M, Neugebauer J, Northrup J. GaN(0001) surface structures studied using scanning tunneling microscopy and first-principles total energy calculations Surface Science. 423: 70-84. DOI: 10.1016/S0039-6028(98)00903-0 |
0.722 |
|
| 1998 |
Smith AR, Ramachandran V, Feenstra RM, Greve DW, Ptak A, Myers T, Sarney W, Salamanca-Riba L, Shin M, Skowronski M. Surface Reconstruction during Molecular Beam Epitaxial Growth of GaN (0001) Mrs Internet Journal of Nitride Semiconductor Research. 3. DOI: 10.1557/S1092578300000843 |
0.754 |
|
| 1998 |
Chen H, Smith AR, Feenstra RM, Greve DW, Northrup JE. SCANNING TUNNELING MICROSCOPY STUDIES OF InGaN GROWTH BY MOLECULAR BEAM EPITAXY Mrs Proceedings. 537. DOI: 10.1557/Proc-537-G9.5 |
0.735 |
|
| 1998 |
Smith AR. Reconstructions of GaN(0001) and (0001̄) surfaces: Ga-rich metallic structures Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 16: 2242. DOI: 10.1116/1.590156 |
0.428 |
|
| 1998 |
Smith AR, Ramachandran V, Feenstra RM, Greve DW, Shin M-, Skowronski M, Neugebauer J, Northrup JE. Wurtzite GaN surface structures studied by scanning tunneling microscopy and reflection high energy electron diffraction Journal of Vacuum Science and Technology. 16: 1641-1645. DOI: 10.1116/1.581134 |
0.739 |
|
| 1998 |
Smith AR, Feenstra RM, Greve DW, Shin M, Skowronski M, Neugebauer J, Northrup JE. Determination of wurtzite GaN lattice polarity based on surface reconstruction Applied Physics Letters. 72: 2114-2116. DOI: 10.1063/1.121293 |
0.695 |
|
| 1998 |
Ramachandran V, Brady MF, Smith AR, Feenstra RM, Greve DW. Preparation of atomically flat surfaces on silicon carbide using hydrogen etching Journal of Electronic Materials. 27: 308-312. DOI: 10.1007/S11664-998-0406-7 |
0.703 |
|
| 1998 |
Smith AR, Feenstra RM, Greve DW, Neugebauer J, Northrup JE. Scanning tunneling microscopy of the GaN(000\(\bar{1}\)) surface Applied Physics A. 66. DOI: 10.1007/S003390051272 |
0.728 |
|
| 1997 |
Smith AR, Ramachandran V, Feenstra RM, Greve DW, Neugebauer J, Northrup JE, Shin M, Skowronski M. Scanning tunneling microscopy observation of surface reconstruction of GaN on sapphire and 6H-SiC Mrs Proceedings. 482: 363. DOI: 10.1557/Proc-482-363 |
0.692 |
|
| 1997 |
Smith AR, Feenstra RM, Greve DW, Neugebauer J, Northrup JE. Reconstructions of the GaN\(0001̄\) Surface Physical Review Letters. 79: 3934-3937. DOI: 10.1103/Physrevlett.79.3934 |
0.739 |
|
| 1996 |
Chao KJ, Smith AR, Shih CK. Direct determination of exact charge states of surface point defects using scanning tunneling microscopy: As vacancies on GaAs (110). Physical Review. B, Condensed Matter. 53: 6935-6938. PMID 9982126 DOI: 10.1103/Physrevb.53.6935 |
0.308 |
|
| 1996 |
Smith AR, Chao KJ, Niu Q, Shih CK. Formation of Atomically Flat Silver Films on GaAs with a "Silver Mean" Quasi Periodicity Science (New York, N.Y.). 273: 226-8. PMID 8662503 DOI: 10.1126/Science.273.5272.226 |
0.383 |
|
| 1996 |
Chao KJ, Smith AR, Shih C. Application of scanning tunneling microscopy to determine the exact charge states of surface point defects Journal of Vacuum Science & Technology B. 14: 948-952. DOI: 10.1116/1.589181 |
0.302 |
|
| 1996 |
Smith AR. Variable low-temperature scanning tunneling microscopy study of Si(001): Nature of the 2×1→c(2×4) phase transition Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 14: 914. DOI: 10.1116/1.589174 |
0.398 |
|
| 1996 |
Ebert P, Heinrich M, Urban K, Chao K‐, Smith AR, Shih CK. Temperature dependent compensation of Zn‐dopant atoms by vacancies in III–V semiconductor surfaces Journal of Vacuum Science and Technology. 14: 1807-1811. DOI: 10.1116/1.580340 |
0.376 |
|
| 1996 |
Smith AR, Chao KJ, Shih C, Anselm KA, Srinivasan A, Streetman BG. Identification of first and second layer aluminum atoms in dilute AlGaAs using cross‐sectional scanning tunneling microscopy Applied Physics Letters. 69: 1214-1216. DOI: 10.1063/1.117415 |
0.7 |
|
| 1995 |
Men FK, Smith AR, Chao KJ, Zhang Z, Shih CK. Dimer-vacancy-dimer-vacancy interaction on the Si(001) surface: The nature of the 2 x n structure. Physical Review. B, Condensed Matter. 52: R8650-R8653. PMID 9979917 DOI: 10.1103/Physrevb.52.R8650 |
0.38 |
|
| 1995 |
Smith AR, Chao KJ, Shih C, Shih YC, Anselm KA, Streetman BG. Influence of various growth parameters on the interface abruptness of AlAs/GaAs short period superlattices Journal of Vacuum Science & Technology B. 13: 1824-1829. DOI: 10.1116/1.587820 |
0.719 |
|
| 1995 |
Smith AR, Chao K, Shih CK, Shih YC, Streetman BG. Cross‐sectional scanning tunneling microscopy study of GaAs/AlAs short period superlattices: The influence of growth interrupt on the interfacial structure Applied Physics Letters. 66: 478-480. DOI: 10.1063/1.114062 |
0.412 |
|
| 1994 |
Smith AR, Gwo S, Sadra K, Shih YC, Streetman BG, Shih CK. Comparative study of cross‐sectional scanning tunneling microscopy/spectroscopy on III–V hetero‐ and homostructures: Ultrahigh vacuum‐cleaved versus sulfide passivated Journal of Vacuum Science & Technology B. 12: 2610-2615. DOI: 10.1116/1.587218 |
0.41 |
|
| 1994 |
Gwo S, Smith AR, Chao K‐, Shih CK, Sadra K, Streetman BG. Cross‐sectional scanning tunneling microscopy and spectroscopy of passivated III–V heterostructures Journal of Vacuum Science and Technology. 12: 2005-2008. DOI: 10.1116/1.578997 |
0.364 |
|
| 1994 |
Smith AR, Gwo S, Shih C. A new high‐resolution two‐dimensional micropositioning device for scanning probe microscopy applications Review of Scientific Instruments. 65: 3216-3219. DOI: 10.1063/1.1144552 |
0.667 |
|
| 1993 |
Gwo S, Chao K‐, Smith AR, Shih CK, Sadra K, Streetman BG. Scanning tunneling microscopy of doping and compositional III–V homo‐ and heterostructures Journal of Vacuum Science & Technology B. 11: 1509-1513. DOI: 10.1116/1.586960 |
0.394 |
|
| 1993 |
Gwo S, Smith AR, Shih CK. Vacancy migration, adatom motion, and atomic bistability on the GaAs(110) surface studied by scanning tunneling microscopy Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 11: 1644-1648. DOI: 10.1116/1.578472 |
0.402 |
|
| 1992 |
Gwo S, Smith AR, Shih C, Sadra K, Streetman BG. Scanning tunneling microscopy of GaAs multiple pn junctions Applied Physics Letters. 61: 1104-1106. DOI: 10.1063/1.107682 |
0.684 |
|
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