☰

Michael Yakimov, Ph.D. - Publications

Affiliations: 
2004 State University of New York, Albany, Albany, NY, United States 
Area:
Condensed Matter Physics
Tree Info Similar researchers PubMed Report error

102 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2024 Biswal G, Yakimov M, Tokranov V, Sablon K, Tulyakov S, Mitin V, Oktyabrsky S. Bias-Tunable Quantum Well Infrared Photodetector. Nanomaterials (Basel, Switzerland). 14. PMID 38535696 DOI: 10.3390/nano14060548  0.488
2020 Sasaki S, Dropiewski K, Madisetti S, Tokranov V, Yakimov M, Oktyabrsky S. Anomalous minority carrier behavior induced by chemical surface passivation solution in p-type GaSb metal–oxide–semiconductor capacitors on Si substrates Journal of Vacuum Science & Technology B. 38: 52204. DOI: 10.1116/6.0000169  0.627
2020 Dropiewski K, Minns A, Yakimov M, Tokranov V, Murat P, Oktyabrsky S. Ultrafast Waveguiding Quantum Dot Scintillation Detector Nuclear Instruments and Methods in Physics Research Section a: Accelerators, Spectrometers, Detectors and Associated Equipment. 954: 161472. DOI: 10.1016/J.Nima.2018.10.150  0.6
2020 Dropiewski K, Minns A, Yakimov M, Tokranov V, Murat P, Oktyabrsky S. Optical Properties of InAs Quantum Dots/GaAs Waveguides for Ultra-fast Scintillators Journal of Luminescence. 220: 116952. DOI: 10.1016/J.Jlumin.2019.116952  0.616
2018 Papa Rao SS, Hobbs C, Olson S, Foroozani N, Chong H, Stamper H, Martinick B, Ashworth D, Bunday B, Malloy M, Holland E, Nalaskowski J, Kearney P, Ngai T, Wells I, ... Yakimov M, et al. (Invited) Materials and Processes for Superconducting Qubits and Superconducting Electronic Circuits on 300mm Wafers Ecs Transactions. 85: 151-161. DOI: 10.1149/08506.0151ECST  0.476
2018 Lebedev DV, Kalyuzhnyy NA, Mintairov SA, Belyaev KG, Rakhlin MV, Toropov AA, Brunkov P, Vlasov AS, Merz J, Rouvimov S, Oktyabrsky S, Yakimov M, Mukhin IV, Shelaev AV, Bykov VA, et al. Density Control of InP/GaInP Quantum Dots Grown by Metal-Organic Vapor-Phase Epitaxy Semiconductors. 52: 497-501. DOI: 10.1134/S1063782618040206  0.566
2018 Mintairov AM, Kapaldo J, Merz JL, Rouvimov S, Lebedev DV, Kalyuzhnyy NA, Mintairov SA, Belyaev KG, Rakhlin MV, Toropov AA, Brunkov PN, Vlasov AS, Zadiranov YM, Blundell SA, Mozharov AM, ... ... Yakimov M, et al. Control of Wigner localization and electron cavity effects in near-field emission spectra of In(Ga)P/GaInP quantum-dot structures Physical Review B. 97. DOI: 10.1103/Physrevb.97.195443  0.526
2017 Sablon K, Sergeev A, Zhang X, Mitin V, Yakimov M, Tokranov V, Oktyabrsky S. Selective Doping of Quantum Dot Nanomaterials for Managing Intersubband Absorption, Dark Current, and Photoelectron Lifetime Mrs Advances. 2: 759-766. DOI: 10.1557/Adv.2017.160  0.63
2017 Zhang X, Mitin V, Sergeev A, Sablon K, Varghese A, Yakimov M, Tokranov V, Oktyabrsky S. Effects of doping on photoelectron kinetics and characteristics of quantum dot infrared photodetector Proceedings of Spie. 10177: 1017729. DOI: 10.1117/12.2262362  0.619
2017 Dropiewski K, Tokranov V, Yakimov M, Oktyabrsky S, Bentley S, Galatage R. MBE growth and digital etch of GaSb/InAs nanowires on Si for logic applications Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 35: 02B115. DOI: 10.1116/1.4978782  0.584
2017 Sasaki S, Dropiewski K, Madisetti S, Tokranov V, Yakimov M, Oktyabrsky S, Bentley S, Galatage R, Jacob AP. Electrical properties related to growth defects in metamorphic GaSb films on Si Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 35: 11203. DOI: 10.1116/1.4973215  0.61
2017 Zhang X, Mitin V, Sergeev A, Sablon K, Yakimov M, Oktyabrsky S, Choi JK, Strasser G. Nanoscale engineering of photoelectron processes in quantum well and dot structures for sensing and energy conversion Journal of Physics: Conference Series. 906: 012026. DOI: 10.1088/1742-6596/906/1/012026  0.517
2016 Varghese A, Yakimov M, Tokranov V, Mitin V, Sablon K, Sergeev A, Oktyabrsky S. Complete voltage recovery in quantum dot solar cells due to suppression of electron capture. Nanoscale. 8: 7248-56. PMID 26974517 DOI: 10.1039/C5Nr07774E  0.621
2016 Oktyabrsky S, Yakimov M, Tokranov V, Murat P. Integrated Semiconductor Quantum Dot Scintillation Detector: Ultimate Limit for Speed and Light Yield Ieee Transactions On Nuclear Science. DOI: 10.1109/Tns.2015.2502426  0.612
2016 Chidambaram T, Veksler D, Madisetti S, Yakimov M, Tokranov V, Oktyabrsky S. InGaAs Inversion Layer Mobility and Interface Trap Density From Gated Hall Measurements Ieee Electron Device Letters. 37: 1547-1550. DOI: 10.1109/Led.2016.2617119  0.61
2015 Yakimov M, Oktyabrsky S, Murat P. Picosecond UV single photon detectors with lateral drift field: Concept and technologies Nuclear Instruments and Methods in Physics Research, Section a: Accelerators, Spectrometers, Detectors and Associated Equipment. 795: 100-108. DOI: 10.1016/J.Nima.2015.05.037  0.529
2014 Madisetti SK, Tokranov V, Greene A, Novak S, Yakimov M, Oktyabrsky S, Bentley S, Jacob AP. GaSb on Si: Structural defects and their effect on surface morphology and electrical properties Prehospital and Disaster Medicine. 1635. DOI: 10.1557/Opl.2014.219  0.6
2014 Madisetti SK, Tokranov V, Greene A, Yakimov M, Sasaki S, Hirayama M, Novak S, Bentley S, Jacob AP, Oktyabrsky S. P-type III-Sb MOSFET on a metamorphic substrate: Towards all III-V CMOS Ecs Transactions. 61: 163-171. DOI: 10.1149/06103.0163ecst  0.594
2014 Greene A, Madisetti S, Yakimov M, Tokranov V, Oktyabrsky S. Development of III-Sb technology for p-channel MOSFETs International Journal of High Speed Electronics and Systems. 23. DOI: 10.1142/S0129156414500153  0.66
2014 Madisetti S, Tokranov V, Greene A, Yakimov M, Hirayama M, Oktyabrsky S, Bentley S, Jacob AP. Growth of strained InGaSb quantum wells for p-FET on Si: Defects, interfaces, and electrical properties Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 32. DOI: 10.1116/1.4892797  0.655
2014 Chidambaram T, Veksler D, Madisetti S, Greene A, Yakimov M, Tokranov V, Hill R, Oktyabrsky S. Interface trap density and mobility extraction in InGaAs buried quantum well metal-oxide-semiconductor field-effect-transistors by gated Hall method Applied Physics Letters. 104. DOI: 10.1063/1.4870257  0.671
2013 Greene A, Madisetti S, Nagaiah P, Tokranov V, Yakimov M, Moore R, Oktyabrsky S. InGaSb MOSFET channel on metamorphic buffer: Materials, interfaces and process options Ecs Transactions. 53: 149-160. DOI: 10.1149/05301.0149ecst  0.784
2013 Yakimov M, Sergeev A, Pogrebnyak V, Varghese A, Tokranov V, Thomain G, Vagidov N, Mitin V, Oktyabrsky S. Engineering of absorbing medium for quantum dot infrared photodetectors Proceedings of Spie - the International Society For Optical Engineering. 8876. DOI: 10.1117/12.2024458  0.609
2013 Zhernokletov DM, Dong H, Brennan B, Kim J, Wallace RM, Yakimov M, Tokranov V, Oktyabrsky S. Investigation of arsenic and antimony capping layers, and half cycle reactions during atomic layer deposition of Al2O3 on GaSb(100) Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 31. DOI: 10.1116/1.4817496  0.586
2013 Chidambaram T, Madisetti S, Greene A, Yakimov M, Tokranov V, Veksler D, Hill R, Oktyabrsky S. Quantification of interface trap density above threshold voltage by gated hall method in InGaAs buried quantum well MOSFET Device Research Conference - Conference Digest, Drc. 127-128. DOI: 10.1109/DRC.2013.6633826  0.586
2013 Zhernokletov DM, Laukkanen P, Dong H, Galatage RV, Brennan B, Yakimov M, Tokranov V, Kim J, Oktyabrsky S, Wallace RM. Surface and interfacial reaction study of InAs(100)-crystalline oxide interface Applied Physics Letters. 102. DOI: 10.1063/1.4807766  0.576
2013 Zhernokletov DM, Dong H, Brennan B, Yakimov M, Tokranov V, Oktyabrsky S, Kim J, Wallace RM. Surface and interfacial reaction study of half cycle atomic layer deposited HfO2 on chemically treated GaSb surfaces Applied Physics Letters. 102. DOI: 10.1063/1.4800441  0.571
2013 Tokranov V, Madisetti S, Yakimov M, Nagaiah P, Faleev N, Oktyabrsky S. All in-situ GaSb MOS structures on GaAs (001): Growth, passivation and high-k oxides Journal of Crystal Growth. 378: 631-635. DOI: 10.1016/J.Jcrysgro.2012.12.105  0.815
2013 Kumar Madisetti S, Chidambaram T, Nagaiah P, Tokranov V, Yakimov M, Oktyabrsky S. Hole mobility and remote scattering in strained InGaSb quantum well MOSFET channels with Al2O3 oxide Physica Status Solidi - Rapid Research Letters. 7: 550-553. DOI: 10.1002/Pssr.201307243  0.827
2012 Oktyabrsky S, Tokranov V, Yakimov M, Sergeev A, Mitin V. Nanoengineered quantum dot medium for space optoelectronic devices Proceedings of Spie - the International Society For Optical Engineering. 8519. DOI: 10.1117/12.967124  0.623
2012 Madisetti S, Nagaiah P, Chidambaram T, Tokranov V, Yakimov M, Oktyabrsky S. Mobility and scattering mechanisms in buried InGaSb quantum well channels integrated with in-situ MBE grown gate oxide Device Research Conference - Conference Digest, Drc. 103-104. DOI: 10.1109/DRC.2012.6256973  0.82
2012 Veksler D, Nagaiah P, Chidambaram T, Cammarere R, Tokranov V, Yakimov M, Chen YT, Huang J, Goel N, Oh J, Bersuker G, Hobbs C, Kirsch PD, Oktyabrsky S. Quantification of interfacial state density (D it) at the high-k/III-V interface based on Hall effect measurements Journal of Applied Physics. 112. DOI: 10.1063/1.4749403  0.815
2012 Greene A, Madisetti S, Nagaiah P, Yakimov M, Tokranov V, Moore R, Oktyabrsky S. Improvement of the GaSb/Al 2O 3 interface using a thin InAs surface layer Solid-State Electronics. 78: 56-61. DOI: 10.1016/J.Sse.2012.05.049  0.821
2011 Nagaiah P, Tokranov V, Yakimov M, Madisetti S, Greene A, Novak S, Moore R, Bakhru H, Oktyabrsky S. In-situ deposited HfO 2with amorphous-Si passivation as a potential gate stack for high mobility (In)GaSb- Based P-MOSFETs Ecs Transactions. 41: 223-230. DOI: 10.1149/1.3633038  0.834
2011 Oktyabrsky S, Nagaiah P, Tokranov V, Yakimov M, Kambhampati R, Koveshnikov S, Veksler D, Goel N, Bersuker G. Electron scattering in buried InGaAs/high-K MOS channels International Journal of High Speed Electronics and Systems. 20: 95-103. DOI: 10.1142/S012915641100643X  0.806
2011 Tokranov V, Nagaiah P, Yakimov M, Matyi RJ, Oktyabrsky S. AlGaAsSb superlattice buffer layer for p-channel GaSb quantum well on GaAs substrate Journal of Crystal Growth. 323: 35-38. DOI: 10.1016/J.Jcrysgro.2010.12.077  0.815
2010 Yakimov M, Van Eisden J, Tokranov V, Varanasi M, Oktyabrsky SR, Mohammed EM, Young IA. Concept of feedback-free high-frequency loss modulation in detuned duo-cavity vertical cavity surface-emitting laser Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 28. DOI: 10.1116/1.3399025  0.485
2010 Nagaiah P, Tokranov V, Yakimov M, Koveshnikov S, Oktyabrsky S, Veksler D, Tsai W, Bersuker G. Mobility and remote scattering in buried InGaAs quantum well channels with high-k gate oxide Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 28. DOI: 10.1116/1.3360903  0.833
2010 Oktyabrsky S, Kambhampati R, Tokranov V, Yakimov M, Heeg T, Warusawithana M, Schlom D, Koveshnikov S. Microstructure and Electrical Properties of III-As Gate Stacks with Amorphous Rare-Earth High-k Oxides Microscopy and Microanalysis. 16: 1412-1413. DOI: 10.1017/S1431927610056990  0.592
2010 Goldberg D, Deych L, Lisyansky A, Shi Z, Tokranov V, Yakimov M, Oktyabrsky S, Menon VM. Bloch-Polaritons in multiple-quantum-well photonic crystal structures Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, Cleo/Qels 2010.  0.511
2009 Oktyabrsky S, Nagaiah P, Tokranov V, Koveshnikov S, Yakimov M, Kambhampati R, Moore R, Tsai W. Electron Scattering in Buried InGaAs MOSFET Channel with HfO 2 Gate Oxide Mrs Proceedings. 1155. DOI: 10.1557/Proc-1155-C02-03  0.691
2009 Tokranov V, Yakimov M, Oktyabrsky S. QD VCSELs with InAs/InGaAs short period superlattice QW injector Proceedings of Spie - the International Society For Optical Engineering. 7224. DOI: 10.1117/12.809570  0.511
2009 Yakimov M, Tokranov V, Sergeev A, Oktyabrsky S. VCSEL with intracavity modulator: Fast modulation options Proceedings of Spie - the International Society For Optical Engineering. 7229. DOI: 10.1117/12.809568  0.462
2009 Ali A, Mookerjea S, Hwang E, Koveshnikov S, Oktyabrsky S, Tokranov V, Yakimov M, Kambhampati R, Tsai W, Datta S. HfO2 gated, self aligned and directly contacted indium arsenide quantum-well transistors for logic applications- A temperature and bias dependent study Device Research Conference - Conference Digest, Drc. 55-56. DOI: 10.1109/DRC.2009.5354916  0.634
2009 Oktyabrsky S, Nagaiah P, Tokranov V, Kambhampati R, Yakimov M, Tsai W, Koveshnikov S. Investigation of scattering mechanisms in HfO 2 gated Hall structures with In 0.77Ga 0.23As quantum well channel Device Research Conference - Conference Digest, Drc. 119-120. DOI: 10.1109/DRC.2009.5354868  0.819
2009 Goldberg D, Deych LI, Lisyansky AA, Shi Z, Menon VM, Tokranov V, Yakimov M, Oktyabrsky S. Exciton-lattice polaritons in multiple-quantum-well-based photonic crystals Nature Photonics. 3: 662-666. DOI: 10.1038/Nphoton.2009.190  0.557
2009 Oktyabrsky S, Tokranov V, Koveshnikov S, Yakimov M, Kambhampati R, Bakhru H, Moore R, Tsai W. Interface properties of MBE-grown MOS structures with InGaAs/InAlAs buried channel and in-situ high-k oxide Journal of Crystal Growth. 311: 1950-1953. DOI: 10.1016/J.Jcrysgro.2008.11.037  0.822
2009 Nagaiah P, Tokranov V, Yakimov M. Strained quantum wells for p-channel InGaAs CMOS Materials Research Society Symposium Proceedings. 1108: 231-236.  0.784
2009 Goldberg D, Deych L, Lisyansky A, Tokranov V, Yakimov M, Oktyabrsky S, Menon VM. Tuning of coherent interaction in a resonant photonic crystal using an external electric field 2009 Conference On Lasers and Electro-Optics and 2009 Conference On Quantum Electronics and Laser Science Conference, Cleo/Qels 2009.  0.485
2009 Oktyabrsky S, Nagaiah P, Tokranov V, Koveshnikov S, Yakimov M, Kambhampati R, Moore R, Tsai W. Electron scattering in buried InGaAs MOSFET channel with HfO2 gate oxide Materials Research Society Symposium Proceedings. 1155: 125-130.  0.835
2008 Oktyabrsky S, Yakimov M, Tokranov V, Kambhampati R, Bakhru H, Koveshnikov S, Tsai W, Zhu F, Lee J. Challanges and progrss in III-V MOSFETs for CMOS circuits International Journal of High Speed Electronics and Systems. 18: 761-772. DOI: 10.1142/S0129156408005746  0.83
2008 Tokranov V, Yakimov M, Van Eisden J, Oktyabrsky S. Modulation and thermal properties of tunnel-coupled InAs QD 1.13μm VCSELs Proceedings of Spie - the International Society For Optical Engineering. 6902. DOI: 10.1117/12.764057  0.502
2008 Van Eisden J, Yakimov M, Tokranov V, Varanasi M, Rumyantsev O, Mohammed EM, Young IA, Oktyabrsky SR. High frequency resonance-free loss modulation in a duo-cavity VCSEL Proceedings of Spie - the International Society For Optical Engineering. 6908. DOI: 10.1117/12.763859  0.477
2008 Van Eisden J, Yakimov M, Tokranov V, Varanasi M, Mohammed EM, Young IA, Oktyabrsky SR. Optically decoupled loss modulation in a Duo-Cavity VCSEL Ieee Photonics Technology Letters. 20: 42-44. DOI: 10.1109/Lpt.2007.912693  0.525
2008 Goel N, Heh D, Koveshnikov S, Ok I, Oktyabrsky S, Tokranov V, Kambhampati R, Yakimov M, Sun Y, Pianetta P, Gaspe CK, Santos MB, Lee J, Datta S, Majhi P, et al. Addressing the gate stack challenge for high mobility in xGa 1-xas channels for NFETs Technical Digest - International Electron Devices Meeting, Iedm. DOI: 10.1109/IEDM.2008.4796695  0.548
2008 Koveshnikov S, Adamo C, Tokranov V, Yakimov M, Kambhampati R, Warusawithana M, Schlom DG, Tsai W, Oktyabrsky S. Thermal stability of electrical and structural properties of GaAs-based metal-oxide-semiconductor capacitors with an amorphous LaAl O3 gate oxide Applied Physics Letters. 93. DOI: 10.1063/1.2952830  0.614
2008 Van Eisden J, Yakimov M, Tokranov V, Mohammed EM, Young IA, Oktyabrsky SR. Monolithic integration of an electroabsorption modulator into a GaAs-based duocavity VCSEL for resonance-free modulation 2008 International Conference On Compound Semiconductor Manufacturing Technology, Cs Mantech 2008.  0.479
2008 Goldberg D, Deych L, Menon VM, Lisyansky A, Tokranov V, Yakimov M, Oktyabrsky S. Exciton-polaritons in double-quantum-well based resonant photonic crystals Optics Infobase Conference Papers.  0.515
2007 Tokranov V, Yakimov M, Van Eisden J, Oktyabrsky S. Tunnel QW-QDs InGaAs-InAs high gain medium for all-epitaxial VCSELs Materials Research Society Symposium Proceedings. 959: 118-123. DOI: 10.1557/Proc-0959-M19-04  0.575
2007 Kambhampati R, Koveshmkov S, Tokranov V, Yakimov M, Moore R, Tsai W, Oktyabrsky S. In-situ deposition of high-k gate stack on InGaAs and GaAs for metal-oxide-semiconductor devices with low equivalent oxide thickness Ecs Transactions. 11: 431-439. DOI: 10.1149/1.2779579  0.641
2007 Tokranov V, Yakimov M, Van Eisden J, Oktyabrsky S. All-epitaxial VCSELs with tunnel QW-QD InGaAs-InAs gain medium Proceedings of Spie - the International Society For Optical Engineering. 6481. DOI: 10.1117/12.701639  0.592
2007 Van Eisden J, Yakimov M, Tokranov V, Varanasi M, Mohammed EM, Young IA, Oktyabrsky S. Modulation properties of VCSEL with intracavity modulator Proceedings of Spie - the International Society For Optical Engineering. 6484. DOI: 10.1117/12.701516  0.493
2007 Ok I, Kim H, Zhang M, Zhu F, Park S, Yum J, Koveshnikov S, Tsai W, Tokranov V, Yakimov M, Oktyabrsky S, Lee JC. Metal gate Hf O2 metal-oxide-semiconductor structures on InGaAs substrate with varying Si interface passivation layer and postdeposition anneal condition Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 25: 1491-1494. DOI: 10.1116/1.2746348  0.624
2007 Oktyabrsky S, Koveshnikov S, Tokranov V, Yakimov M, Kambhampati R, Bakhru H, Zhu F, Lee J, Tsai W. InGaAs and GaAs/InGaAs channel enhancement mode n-MOSFETs with HfO 2 gate oxide and a-Si interface passivation layer 65th Drc Device Research Conference. 203-204. DOI: 10.1109/DRC.2007.4373718  0.617
2007 Van Eisden J, Yakimov M, Tokranov V, Varanasi M, Oktyabrsky S, Mohammed EM, Young IA. Optical decoupling in a loss-modulated dual-cavity VCSEL Conference On Lasers and Electro-Optics, 2007, Cleo 2007. DOI: 10.1109/CLEO.2007.4453111  0.437
2007 Tokranov V, Yakimov M, Van Eisden J, Oktyabrsky S. All-epitaxial VCSELs with tunnel-coupled QDs-QW InAs-InGaAs active medium Optics Infobase Conference Papers. DOI: 10.1109/CLEO.2007.4452595  0.554
2007 Zhu F, Koveshnikov S, Ok I, Kim HS, Zhang M, Lee T, Thareja G, Yu L, Lee JC, Tsai W, Tokranov V, Yakimov M, Oktyabrsky S. Depletion-mode GaAs metal-oxide-semiconductor field-effect transistor with amorphous silicon interface passivation layer and thin HfO2 gate oxide Applied Physics Letters. 91: 43507. DOI: 10.1063/1.2762295  0.661
2007 Zhang MH, Oye M, Cobb B, Zhu F, Kim HS, Ok IJ, Hurst J, Lewis S, Holmes A, Lee JC, Koveshnikov S, Tsai W, Yakimov M, Torkanov V, Oktyabrsky S. Importance of controlling oxygen incorporation into HfO2∕Si∕n-GaAs gate stacks Journal of Applied Physics. 101: 34103. DOI: 10.1063/1.2432479  0.616
2006 Yakimov M, Tokranov V, Kambhampati R, Koveshnikov S, Tsai W, Zhu F, Lee J, Oktyabrsky S. Enhancement Mode GaAs n-MOSFET with High-k Dielectric The Japan Society of Applied Physics. 2006: 946-947. DOI: 10.7567/Ssdm.2006.E-8-1  0.771
2006 Tokranov V, Yakimov M, Van Eisden J, Oktyabrsky S. Tunnel quantum well-on-dots InGaAs-InAs high-gain medium for laser diodes Proceedings of Spie - the International Society For Optical Engineering. 6129. DOI: 10.1117/12.646844  0.587
2006 Van Eisden J, Yakimov M, Tokranov V, Oktyabrsky S, Mohammed EM, Young IA. High frequency Q-switched operation of a VCSEL with intracavity electroabsorption modulator Conference On Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, Cleo/Qels 2006. DOI: 10.1109/CLEO.2006.4628366  0.453
2006 Kim HS, Ok I, Zhang M, Lee T, Zhu F, Yu L, Lee JC, Koveshnikov S, Tsai W, Tokranov V, Yakimov M, Oktyabrsky S. Depletion-mode GaAs metal-oxide-semiconductor field-effect transistor with HfO 2 dielectric and germanium interfacial passivation layer Applied Physics Letters. 89. DOI: 10.1063/1.2396914  0.672
2006 Koveshnikov S, Tsai W, Ok I, Lee JC, Torkanov V, Yakimov M, Oktyabrsky S. Metal-oxide-semiconductor capacitors on GaAs with high-k gate oxide and amorphous silicon interface passivation layer Applied Physics Letters. 88: 1-3. DOI: 10.1063/1.2164327  0.609
2006 Oktyabrsky S, Tokranov V, Yakimov M, Moore R, Koveshnikov S, Tsai W, Zhu F, Lee JC. High-k gate stack on GaAs and InGaAs using in situ passivation with amorphous silicon Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 135: 272-276. DOI: 10.1016/J.Mseb.2006.08.018  0.645
2006 Oktyabrsky S, Tokranov V, Agnello G, Van Eisden J, Yakimov M. Nano-engineering approaches to self-assembled InAs quantum dot laser medium Journal of Electronic Materials. 35: 822-833. DOI: 10.1007/Bf02692535  0.576
2005 Agnello G, Tokranov V, Yakimov M, Lamberti M, Zheng Y, Oktyabrsky S. Structural and optical effects of capping layer material and growth rate on the properties of self-assembled InAs quantum dot structures Materials Research Society Symposium Proceedings. 829: 63-68. DOI: 10.1557/Proc-829-B2.1  0.579
2005 Tokranov V, Yakimov M, Agnello G, Van Eisden J, Oktyabrsky S. Tunnel quantum dot/well InAs/InGaAs structures as active medium for laser diodes Proceedings of Spie - the International Society For Optical Engineering. 5734: 65-74. DOI: 10.1117/12.591156  0.562
2005 Oktyabrsky S, Yakimov M, Tokranov V, Van Eisden J, Katsnelson A. Oxidation lift-off technology Progress in Biomedical Optics and Imaging - Proceedings of Spie. 5730: 149-157. DOI: 10.1117/12.591112  0.46
2005 Yakimov M, Tokranov V, Agnello G, Van Eisden J, Oktyabrsky S. In situ monitoring of formation of InAs quantum dots and overgrowth by GaAs or AlAs Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 23: 1221-1225. DOI: 10.1116/1.1881634  0.641
2005 Oktyabrsky S, Lamberti M, Tokranov V, Agnello G, Yakimov M. Room-temperature defect tolerance of band-engineered InAs quantum dot heterostructures Journal of Applied Physics. 98. DOI: 10.1063/1.2037872  0.563
2004 Tokranov V, Yakimov M, Katsnelson A, Lamberti M, Angello G, Oktyabrsky S. Nanoengineered InAs quantum dot active medium for laser diodes Proceedings of Spie - the International Society For Optical Engineering. 5365: 72-79. DOI: 10.1117/12.529717  0.529
2004 Oktyabrsky S, Katsnelson A, Tokranov V, Todt R, Yakimov M. Oxidation lift-off method for layer transfer of GaAs/AlAs-based structures Applied Physics Letters. 85: 151-153. DOI: 10.1063/1.1769592  0.578
2003 Lamberti M, Katsnelson A, Yakimov M, Agnello G, Tokranov V, Oktyabrsky S. Room-temperature defect tolerance of shape engineered quantum dot structures Materials Research Society Symposium - Proceedings. 799: 305-310. DOI: 10.1557/Proc-799-Z5.36  0.613
2003 Tokranov DV, Yakimov M, Katsnelson A, Lamberti M, Agnello G, Oktyabrsky S. Nanoengineered Quantum Dot Active Medium for Thermally-Stable Laser Mrs Proceedings. 794. DOI: 10.1557/Proc-794-T7.3/Z7.3  0.639
2003 Katsnelson A, Tokranov V, Yakimov M, Oktyabrsky S. Integration of III-V optoelectronic components on Si platform Materials Research Society Symposium - Proceedings. 783: 217-222. DOI: 10.1557/Proc-783-B7.4  0.546
2003 Katsnelson A, Tokranov V, Yakimov M, Lamberti M, Oktyabrsky S. Hybrid integration of III-V optoelectronic devices on Si platform using BCB Proceedings of Spie - the International Society For Optical Engineering. 4997: 198-205. DOI: 10.1557/Proc-741-J5.15  0.622
2003 Tokranov V, Yakimov M, Katsnelson A, Lamberti M, Oktyabrsky S. Shape Engineered InAs Quantum Dots with Stabilized Electronic Properties Proceedings of Spie - the International Society For Optical Engineering. 4999: 509-517. DOI: 10.1557/Proc-737-E13.44  0.573
2003 Tokranov V, Yakimov M, Katsnelson A, Lamberti M, Oktyabrsky S. Enhanced thermal stability of laser diodes with shape-engineered quantum dot medium Applied Physics Letters. 83: 833-835. DOI: 10.1063/1.1598645  0.573
2003 Tokranov V, Yakimov M, Katsnelson A, Lamberti M, Agnello G, Oktyabrsky S. Nanoengineered quantum dot active medium for thermally-stable laser diodes Materials Research Society Symposium - Proceedings. 794: 195-200.  0.596
2003 Tokranov V, Yakimov M, Katsnelson A, Lamberti M, Agnello G, Oktyabrsky S. Nanoengineered quantum dot active medium for thermally-stable laser diodes Materials Research Society Symposium - Proceedings. 794: 195-200.  0.529
2002 Yakimov M, Tokranov V, Katnelson A, Oktyabrsky S. Initial Stages of InAs Quantum Dots Evolution in GaAs/AlAs Matrixes Materials Research Society Symposium - Proceedings. 749: 239-244. DOI: 10.1557/Proc-749-W13.8  0.624
2002 Lamberti M, Tokranov V, Moore R, Yakimov M, Katsnelson A, Oktyabrsky S. Formation of defects in MBE re-grown GaAs films on GaAs/AlGaAs heterostructures Materials Research Society Symposium - Proceedings. 744: 369-374. DOI: 10.1557/Proc-744-M6.4  0.586
2002 Tokranov V, Yakimov M, Katsnelson A, Dovidenko K, Todt R, Oktyabrsky S. InAs quantum dots in AlAs/GaAs short period superlattices: Structure, optical characteristics and laser diodes Materials Research Society Symposium - Proceedings. 707: 143-148. DOI: 10.1557/Proc-707-H3.8.1  0.644
2002 Todt R, Dovidenko K, Katsnelson A, Tokranov V, Yakimov M, Oktyabrsky S. Oxidation kinetics and microstructure of wet-oxidized mbe-grown short-period AlGaAs superlattices Materials Research Society Symposium - Proceedings. 692: 561-566. DOI: 10.1557/Proc-692-H9.44.1  0.581
2002 Tokranov V, Yakimov M, Katsnelson A, Dovidenko K, Todt R, Oktyabrsky S. InAs quantum dot laser diodes: Structure, characteristics and temperature dependence Proceedings of Spie - the International Society For Optical Engineering. 4656: 79-88. DOI: 10.1117/12.460804  0.546
2002 Katsnelson A, Tokranov V, Yakimov M, Lamberti M, Oktyabrsky S. Hybrid integration of III-V optoelectronic devices on Si platform using BCB Materials Research Society Symposium - Proceedings. 741: 123-128.  0.578
2002 Tokranov V, Yakimov M, Katsnelson A, Dovidenko K, Todt R, Oktyabrsky S. InAs quantum dots in AlAs/GaAs short period superlattices: Structure, optical characteristics and laser diodes Materials Research Society Symposium - Proceedings. 707: 143-148.  0.545
2001 Yakimov M, Tokranov V, Oktyabrsky S. Dynamics of InAs quantum dots formation on AlAs and GaAs Materials Research Society Symposium - Proceedings. 648. DOI: 10.1557/Proc-648-P2.6  0.63
2001 Zhu J, Thaik M, Yakimov M, Oktyabrsky S, Kaloyeros AE, Huang MB. Ion beam radiation effects on InAs semiconductor quantum dots Materials Research Society Symposium - Proceedings. 647. DOI: 10.1557/Proc-647-O11.31  0.539
2001 Oktyabrsky S, Tokranov V, Yakimov M, Katsnelson A, Dovidenko K. Vertical stacks of InAs quantum dots embedded into short-period AlAs/GaAs superlattice Materials Research Society Symposium - Proceedings. 642: J3.30.1-J3.30.6.  0.551
2000 Naydenkov MN, Kvit AV, Yakimov MV. High quantum efficiency diode photodetector based on ultra-thin InGaAs-on-Si films Proceedings of Spie - the International Society For Optical Engineering. 3953: 163-168.  0.382
1998 Kvit AV, Yakimov MV, Konstantinov PL, Naidenkov MN. Effect of interface-related deep levels on high sensitivity of Schottky diode photodetector based on ultrathin InGaAs film on Si Materials Research Society Symposium - Proceedings. 533: 157-162.  0.36
Show low-probability matches.