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Andrea Corrion, Ph.D. - Publications

Affiliations: 
2008 Materials University of California, Santa Barbara, Santa Barbara, CA, United States 
Area:
Materials Science Engineering
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10 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Moon J, Wong J, Grabar B, Antcliffe M, Chen P, Arkun E, Khalaf I, Corrion A, Chappell J, Venkatesan N, Fay P. 360 GHz f MAX Graded-Channel AlGaN/GaN HEMTs for mmW Low-Noise Applications Ieee Electron Device Letters. 41: 1173-1176. DOI: 10.1109/Led.2020.3005337  0.419
2020 Moon JS, Grabar R, Wong J, Antcliffe M, Chen P, Arkun E, Khalaf I, Corrion A, Chappell J, Venkatesan N, Fay P. High-speed graded-channel AlGaN/GaN HEMTs with power added efficiency >70% at 30 GHz Electronics Letters. 56: 678-680. DOI: 10.1049/El.2020.0281  0.449
2018 Wong JC, Micovic M, Brown DF, Khalaf I, Williams A, Corrion A. Selective anisotropic etching of GaN over AlGaN for very thin films Journal of Vacuum Science and Technology. 36: 30603. DOI: 10.1116/1.5012530  0.381
2015 Tang Y, Shinohara K, Regan D, Corrion A, Brown D, Wong J, Schmitz A, Fung H, Kim S, Micovic M. Ultrahigh-speed GaN high-electron-mobility transistors with fT/fmax of 454/444 GHz Ieee Electron Device Letters. 36: 549-551. DOI: 10.1109/Led.2015.2421311  0.483
2011 Chu R, Corrion A, Chen M, Li R, Wong D, Zehnder D, Hughes B, Boutros K. 1200-V Normally Off GaN-on-Si Field-Effect Transistors With Low Dynamic on -Resistance Ieee Electron Device Letters. 32: 632-634. DOI: 10.1109/Led.2011.2118190  0.366
2008 Arehart AR, Corrion A, Poblenz C, Speck JS, Mishra UK, Ringel SA. Deep level optical and thermal spectroscopy of traps in n -GaN grown by ammonia molecular beam epitaxy Applied Physics Letters. 93. DOI: 10.1063/1.2981571  0.621
2008 Armstrong A, Caudill J, Corrion A, Poblenz C, Mishra UK, Speck JS, Ringel SA. Characterization of majority and minority carrier deep levels in p -type GaN:Mg grown by molecular beam epitaxy using deep level optical spectroscopy Journal of Applied Physics. 103. DOI: 10.1063/1.2891673  0.615
2006 Shen L, Palacios T, Poblenz C, Corrion A, Chakraborty A, Fichtenbaum N, Keller S, Denbaars SP, Speck JS, Mishra UK. Unpassivated high power deeply recessed GaN HEMTs with fluorine-plasma surface treatment Ieee Electron Device Letters. 27: 214-216. DOI: 10.1109/Led.2006.871887  0.638
2006 Recht F, McCarthy L, Rajan S, Chakraborty A, Poblenz C, Corrion A, Speck JS, Mishra UK. Nonalloyed ohmic contacts in AlGaN/GaN HEMTs by ion implantation with reduced activation annealing temperature Ieee Electron Device Letters. 27: 205-207. DOI: 10.1109/Led.2006.870419  0.624
2006 Corrion A, Poblenz C, Waltereit P, Palacios T, Rajan S, Mishra UK, Speck JS. Review of Recent Developments in Growth of AlGaN/GaN High-Electron Mobility Transistors on 4H-SiC by Plasma-Assisted Molecular Beam Epitaxy Ieice Transactions On Electronics. 89: 906-912. DOI: 10.1093/Ietele/E89-C.7.906  0.655
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