Ajay K. Sattu, Ph.D.
Affiliations: | 2011 | Electrical Engineering | University of South Carolina, Columbia, SC |
Area:
Electronics and Electrical EngineeringGoogle:
"Ajay Sattu"Parents
Sign in to add mentorGrigory S. Simin | grad student | 2011 | University of South Carolina | |
(Aluminum gallium nitride/gallium nitride HFET with composite "slow/fast" gate.) |
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Publications
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Simin G, Wang J, Khan B, et al. (2011) Novel approaches to microwave switching devices using nitride technology International Journal of High Speed Electronics and Systems. 20: 219-227 |
Sattu AK, Yang J, Gaska R, et al. (2011) Small- and large-signal performance of III-nitride RF switches with hybrid fast/slow gate design Ieee Microwave and Wireless Components Letters. 21: 305-307 |
Sattu A, Deng J, Billingsley D, et al. (2011) Enhanced power and breakdown in III-N RF switches with a slow gate Ieee Electron Device Letters. 32: 749-751 |
Sattu A, Billingsley D, Deng J, et al. (2011) Low-loss AlInN/GaN microwave switch Electronics Letters. 47: 863-865 |
Shatalov M, Sun W, Bilenko Y, et al. (2010) Large chip high power deep ultraviolet light-emitting diodes Applied Physics Express. 3 |
Sattu A, Yang J, Shur M, et al. (2010) AlGaN/GaN microwave switch with hybrid slow and fast gate design Ieee Electron Device Letters. 31: 1389-1391 |
Jain R, Sun W, Yang J, et al. (2008) Migration enhanced lateral epitaxial overgrowth of AlN and AlGaN for high reliability deep ultraviolet light emitting diodes Applied Physics Letters. 93 |
Reed ML, Wraback M, Lunev A, et al. (2008) Device self-heating effects in deep UV LEDs studied by systematic variation in pulsed current injection Physica Status Solidi (C) Current Topics in Solid State Physics. 5: 2053-2055 |
Gaevski ME, Sun W, Yang J, et al. (2006) Non-catalyst growth and characterization of a -plane AlGaN nanorods Physica Status Solidi (a). 203: 1696-1699 |