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Hyungtak Kim, Ph.D. - Publications

Affiliations: 
2003 Cornell University, Ithaca, NY, United States 
Area:
Compound semiconductor materials and high frequency high speed devices; molecular beam epitaxy; microwave and millimeter wave transistors and integrated circuits; semiconductor lasers and photodetectors and their integration with transistors
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55 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2023 Chae M, Kim H. Investigation of the Gate Degradation Induced by Forward Gate Voltage Stress in p-GaN Gate High Electron Mobility Transistors. Micromachines. 14. PMID 37241601 DOI: 10.3390/mi14050977  0.347
2020 Choi JH, Vuong TA, Kim H, Cha HY. High-Sensitivity Hydrogen Sensor Based on AlGaN/GaN Heterojunction Field-Effect Transistor. Journal of Nanoscience and Nanotechnology. 20: 4404-4408. PMID 31968484 DOI: 10.1166/Jnn.2020.17786  0.36
2020 Nguyen C, Kim H. High Performance NO₂ Gas Sensor Based on Pd-AlGaN/GaN High Electron Mobility Transistors with Thin AlGaN Barrier Journal of Semiconductor Technology and Science. 20: 170-176. DOI: 10.5573/Jsts.2020.20.2.170  0.36
2020 Lundh JS, Song Y, Chatterjee B, Baca AG, Kaplar RJ, Armstrong AM, Allerman AA, Klein BA, Kendig D, Kim H, Choi S. Device-Level Multidimensional Thermal Dynamics With Implications for Current and Future Wide Bandgap Electronics Journal of Electronic Packaging. 142: 31113. DOI: 10.1115/1.4047100  0.412
2020 Chatterjee B, Dundar C, Beechem TE, Heller E, Kendig D, Kim H, Donmezer N, Choi S. Nanoscale electro-thermal interactions in AlGaN/GaN high electron mobility transistors Journal of Applied Physics. 127: 44502. DOI: 10.1063/1.5123726  0.371
2020 Kim H, Kang M, Jang W, Seo K, Kim H, Cha H. PECVD SiNx Passivation for AlGaN/GaN HFETs with Ultra-Thin AlGaN Barrier Solid-State Electronics. 107876. DOI: 10.1016/J.Sse.2020.107876  0.43
2019 Choi JH, Kim H, Sung HK, Cha HY. Investigation of Stability and Power Consumption of an AlGaN/GaN Heterostructure Hydrogen Gas Sensor Using Different Bias Conditions. Sensors (Basel, Switzerland). 19. PMID 31888143 DOI: 10.3390/S19245549  0.362
2019 Cho G, Cha HY, Kim H. Influence of Oxygen-Plasma Treatment on In-Situ SiN/AlGaN/GaN MOSHEMT with PECVD SiO Gate Insulator. Materials (Basel, Switzerland). 12. PMID 31795462 DOI: 10.3390/Ma12233968  0.375
2019 Keum D, Kim H. Proton Irradiation Effects on the Time-Dependent Dielectric Breakdown Characteristics of Normally-Off AlGaN/GaN Gate-Recessed Metal-Insulator-Semiconductor Heterostructure Field Effect Transistors. Micromachines. 10. PMID 31717725 DOI: 10.3390/Mi10110723  0.402
2019 Chung G, Vuong T, Kim H. Demonstration of hydrogen sensing operation of AlGaN/GaN HEMT gas sensors in extreme environment Results in Physics. 12: 83-84. DOI: 10.1016/J.Rinp.2018.11.064  0.326
2018 Ji S, Kim H, Cho IH. Characteristics of Recess Structure Tunneling Field Effect Transistor for High on Current Drivability Journal of Semiconductor Technology and Science. 18: 360-366. DOI: 10.5573/Jsts.2018.18.3.360  0.353
2018 Kim H, Jang W, Eom S, Han S, Kim H, Seo K, Cho C, Cha H. Effects of PECVD SiO₂ Gate Dielectric Thickness on Recessed AlGaN/GaN MOS-HFETs Journal of Semiconductor Technology and Science. 18: 187-192. DOI: 10.5573/Jsts.2018.18.2.187  0.415
2018 Cho G, Cha H, Kim H. Parasitic Resistance Effects on Mobility Extraction of Normally-off AlGaN/GaN Gate-recessed MISHFETs Journal of Semiconductor Technology and Science. 18: 78-83. DOI: 10.5573/Jsts.2018.18.1.078  0.321
2018 Lee J, Kim D, Eom S, Roh S, Seo K, Kim H, Kim H, Cha H, Byun Y. Improved interface characteristics of Mo/SiO2/4H-SiC metal-oxide-semiconductor with post-metallization annealing Journal of the Korean Physical Society. 72: 166-170. DOI: 10.3938/Jkps.72.166  0.336
2018 Chung G, Cha H, Kim H. Enhanced hydrogen sensitivity of AlGaN/GaN heterojunction gas sensors by GaN-cap layer Electronics Letters. 54: 896-897. DOI: 10.1049/El.2018.1167  0.322
2018 Kim H, Eom S, Seo K, Kim H, Cha H. Time-dependent dielectric breakdown of recessed AlGaN/GaN-on-Si MOS-HFETs with PECVD SiO2 gate oxide Vacuum. 155: 428-433. DOI: 10.1016/J.Vacuum.2018.06.043  0.368
2018 Keum D, Kim H. Low-temperature characteristics of normally-off AlGaN/GaN-on-Si gate-recessed MOSHFETs Cryogenics. 93: 51-55. DOI: 10.1016/J.Cryogenics.2018.05.009  0.452
2017 Kim HS, Jang WH, Han SW, Kim H, Cho CH, Oh J, Cha HY. AlGaN/GaN-on-Si Power FET with Mo/Au Gate Journal of Semiconductor Technology and Science. 17: 204-209. DOI: 10.5573/Jsts.2017.17.2.204  0.443
2017 Keum DM, Sung H, Kim H. Degradation Characteristics of Normally-Off p-AlGaN Gate AlGaN/GaN HEMTs With 5 MeV Proton Irradiation Ieee Transactions On Nuclear Science. 64: 258-262. DOI: 10.1109/Tns.2016.2612227  0.421
2017 Choi J, Jo M, Han S, Kim H, Kim S, Jang S, Kim J, Cha H. Hydrogen gas sensor of Pd-functionalised AlGaN/GaN heterostructure with high sensitivity and low-power consumption Electronics Letters. 53: 1200-1202. DOI: 10.1049/El.2017.2107  0.32
2017 Han S, Jo M, Kim H, Cho C, Cha H. AlGaN/GaN-on-Si monolithic power-switching device with integrated gate current booster Solid-State Electronics. 134: 30-38. DOI: 10.1016/J.Sse.2017.05.009  0.438
2016 Park S, Lee J, Cho C, Choi Y, Kim H, Cha H. Diode Embedded AlGaN/GaN Heterojuction Field-Effect Transistor Jsts:Journal of Semiconductor Technology and Science. 16: 215-220. DOI: 10.5573/Jsts.2016.16.2.215  0.439
2016 Kang Y, Sung H, Kim H. Investigation of kink effect in normally-off AlGaN/GaN recessed-gate MOS-heterostructure FETs Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 34. DOI: 10.1116/1.4959842  0.452
2016 Keum D, Kim H, Cho K. Non-volatile memory operation in normally-off GaN MOS heterostructure field effect transistors with thin AlGaN barrier Electronics Letters. 52: 661-663. DOI: 10.1049/El.2015.4258  0.401
2015 Kim KS, Ji SR, Kim HM, Kwon YJ, Hwang JH, Lee SY. Intercostal Nerve Schwannoma Encountered during a Rib-Latissimus Dorsi Osteomyocutaneous Flap Operation. Archives of Plastic Surgery. 42: 800-802. PMID 26618135 DOI: 10.5999/aps.2015.42.6.800  0.387
2015 Choi S, Kang Y, Kim J, Kim J, Choi S, Kim DM, Cha H, Kim H, Kim DH. Frequency-dependent C-V Characteristic-based Extraction of Interface Trap Density in Normally-off Gate-recessed AlGaN/GaN Heterojunction Field-effect Transistors Jsts:Journal of Semiconductor Technology and Science. 15: 497-503. DOI: 10.5573/Jsts.2015.15.5.497  0.409
2015 Kang Y, Cha HY, Kim H, Choi S, Kim DH. Extraction of the interface trap density through the differential subthreshold ideality factor technique in normally-off AlGaN/GaN MOSHFETs Journal of the Korean Physical Society. 66: 1291-1294. DOI: 10.3938/Jkps.66.1291  0.403
2015 Keum DM, Cha HY, Kim H. Proton Bombardment Effects on Normally-off AlGaN/GaN-on-Si Recessed MISHeterostructure FETs Ieee Transactions On Nuclear Science. 62: 3362-3368. DOI: 10.1109/Tns.2015.2495209  0.438
2014 Keum D, Choi S, Kang Y, Lee J, Cha H, Kim H. Temperature-Dependent Instabilities of DC characteristics in AlGaN/GaN-on-Si Heterojunction Field Effect Transistors Jsts:Journal of Semiconductor Technology and Science. 14: 682-687. DOI: 10.5573/Jsts.2014.14.5.682  0.479
2014 Choi S, Lee J, Kang Y, Cha H, Kim H, Cho C. Development of a Au-free process using Mo-based metallization for high-power AlGaN/GaN-on-Si heterostructure field-effect transistors Journal of the Korean Physical Society. 65: 526-531. DOI: 10.3938/Jkps.65.526  0.391
2014 Lee J, Park B, Kim H, Kim J, Cha H. AlGaN/GaN MOSHFET power switching transistor with embedded fast recovery diode Electronic Materials Letters. 10: 1115-1120. DOI: 10.1007/S13391-014-4128-0  0.452
2013 Cho JH, Kim H, Sung HK. Simple dual-loop optoelectronic oscillator with a low spurious level Journal of the Korean Physical Society. 63: 1736-1739. DOI: 10.3938/Jkps.63.1736  0.303
2013 Choi S, Lee J, Cha H, Kim H. Degradation characteristics of high-voltage AlGaN/GaN-on-Si heterostructure FETs under a reverse gate bias stress Journal of the Korean Physical Society. 63: 1208-1212. DOI: 10.3938/Jkps.63.1208  0.447
2013 Choi S, Lee J, Cha H, Kim H. Bias-stress-induced trapping effect of high-voltage field-plated AlGaN/GaN-on-Si heterostructure FETs Journal of the Korean Physical Society. 62: 954-958. DOI: 10.3938/Jkps.62.954  0.461
2013 Yoon H, Sung Hk, Kim H. Field-induced degradation of organic field-effect transistors under vacuum condition Journal of the Korean Physical Society. 62: 536-540. DOI: 10.3938/Jkps.62.536  0.399
2013 Park BR, Lee JG, Choi W, Kim H, Seo KS, Cha HY. High-quality ICPCVD SiO2 for normally off AlGaN/GaN-on-Si recessed MOSHFETs Ieee Electron Device Letters. 34: 354-356. DOI: 10.1109/Led.2012.2236678  0.457
2013 Lee JG, Choi S, Park BR, Seo KS, Kim H, Cha HY. Nonvolatile memory device based on SiO2/GaN/AlGaN/GaN heterostructure Electronics Letters. 49: 529-531. DOI: 10.1049/El.2012.4083  0.38
2012 Yoon H, Kim H. Optimization of field-plate AlGaN/GaN HFETs for high-voltage and high-frequency operation Journal of the Korean Physical Society. 60: 113-117. DOI: 10.3938/Jkps.60.113  0.393
2012 Kim Y, Bae M, Kim W, Kong D, Jung HK, Kim H, Kim S, Kim DM, Kim DH. Amorphous InGaZnO Thin-Film Transistors—Part I: Complete Extraction of Density of States Over the Full Subband-Gap Energy Range Ieee Transactions On Electron Devices. 59: 2689-2698. DOI: 10.1109/Ted.2012.2208969  0.336
2010 Cha H, Kim H, Lim J. DC Characteristics of Wide Bandgap Semiconductor Field Effect Transistors at Cryogenic Temperatures Journal of the Korean Physical Society. 56: 1523-1526. DOI: 10.3938/Jkps.56.1523  0.347
2010 Cha HY, Sung HK, Kim H, Cho CH, Sandvik PM. 4H-SiC avalanche photodiodes for 280nm UV detection Ieice Transactions On Electronics. 648-650. DOI: 10.1587/Transele.E93.C.648  0.318
2009 Kim H, Eastman LF. High-electric-field induced trap generation in AIGaN/GaN heterostructure field-effect transistors Journal of the Korean Physical Society. 55: 666-670. DOI: 10.3938/Jkps.55.666  0.49
2003 Sahoo DK, Lal RK, Kim H, Tilak V, Eastman LF. High-field effects in silicon nitride passivated GaN MODFETs Ieee Transactions On Electron Devices. 50: 1163-1170. DOI: 10.1109/Ted.2003.813221  0.686
2003 Kim H, Thompson RM, Tilak V, Prunty TR, Shealy JR, Eastman LF. Effects of SiN passivation and high-electric field on AlGaN-GaN HFET degradation Ieee Electron Device Letters. 24: 421-423. DOI: 10.1109/Led.2003.813375  0.764
2003 Kaper VS, Tilak V, Kim H, Vertiatchikh AV, Thompson RM, Prunty TR, Eastman LF, Shealy JR. High-Power Monolithic AlGaN/GaN HEMT Oscillator Ieee Journal of Solid-State Circuits. 38: 1457-1461. DOI: 10.1109/Jssc.2003.815934  0.773
2003 Koley G, Kim H, Eastman LF, Spencer MG. Electrical bias stress related degradation of AlGaN/GaN HEMTs Electronics Letters. 39: 1217-1218. DOI: 10.1049/El:20030773  0.659
2003 Kim H, Vertiatchikh A, Thompson RM, Tilak V, Prunty TR, Shealy JR, Eastman LF. Hot electron induced degradation of undoped AlGaN/GaN HFETs Microelectronics Reliability. 43: 823-827. DOI: 10.1016/S0026-2714(03)00066-0  0.78
2002 Kim H, Vertiatchikh A, Tilak V, Thompson RM, Prunty T, Shealy JR, Eastman LF. Hot electron effects on undoped AlGaN/GaN high electron mobility transistors Gaas Reliability Workshop, Proceedings. 2002: 5-6. DOI: 10.1109/GAAS.2002.1167856  0.769
2001 Kim H, Tilak V, Green BM, Cha HY, Smart JA, Shealy JR, Eastman LF. Degradation characteristics of AlGaN-GaN high electron mobility transistors Ieee International Reliability Physics Symposium Proceedings. 2001: 214-218. DOI: 10.1109/RELPHY.2001.922904  0.787
2001 Tilak V, Green B, Kaper V, Kim H, Prunty T, Smart J, Shealy J, Eastman L. Influence of barrier thickness on the high-power performance of AlGaN/GaN HEMTs Ieee Electron Device Letters. 22: 504-506. DOI: 10.1109/55.962644  0.796
2001 Green BM, Tilak V, Lee S, Kim H, Smart JA, Webb KJ, Shealy JR, Eastman LF. High-power broad-band AlGaN/GaN HEMT MMICs on SiC substrates Ieee Transactions On Microwave Theory and Techniques. 49: 2486-2493. DOI: 10.1109/22.971640  0.767
2001 Eastman LF, Tilak V, Smart J, Green BM, Chumbes EM, Dimitrov R, Kim H, Ambacher OS, Weimann N, Prunty T, Murphy M, Schaff WJ, Shealy JR. Undoped AlGaN/GaN HEMTs for microwave power amplification Ieee Transactions On Electron Devices. 48: 479-485. DOI: 10.1109/16.906439  0.801
2001 Kim H, Tilak V, Green BM, Smart JA, Schaff WJ, Shealy JR, Eastman LF. Reliability Evaluation of High Power AlGaN/GaN HEMTs on SiC Substrate Physica Status Solidi (a) Applied Research. 188: 203-206. DOI: 10.1002/1521-396X(200111)188:1<203::Aid-Pssa203>3.0.Co;2-C  0.801
2000 Green BM, Chu KK, Smart JA, Tilak V, Kim H, Shealy JR, Eastman LF. Cascode connected AlGaN/GaN HEMTs on SiC substrates Ieee Microwave and Guided Wave Letters. 10: 316-318. DOI: 10.1109/75.862226  0.776
2000 Dimitrov R, Tilak V, Yeo W, Green B, Kim H, Smart J, Chumbes E, Shealy JR, Schaff W, Eastman LF, Miskys C, Ambacher O, Stutzmann M. Influence of oxygen and methane plasma on the electrical properties of undoped AlGaN/GaN heterostructures for high power transistors Solid-State Electronics. 44: 1361-1365. DOI: 10.1016/S0038-1101(00)00085-X  0.783
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