| Year |
Citation |
Score |
| 2022 |
Cheema SS, Shanker N, Wang LC, Hsu CH, Hsu SL, Liao YH, San Jose M, Gomez J, Chakraborty W, Li W, Bae JH, Volkman SK, Kwon D, Rho Y, Pinelli G, ... ... Hu C, et al. Ultrathin ferroic HfO-ZrO superlattice gate stack for advanced transistors. Nature. 604: 65-71. PMID 35388197 DOI: 10.1038/s41586-022-04425-6 |
0.628 |
|
| 2020 |
Cheema SS, Kwon D, Shanker N, Dos Reis R, Hsu SL, Xiao J, Zhang H, Wagner R, Datar A, McCarter MR, Serrao CR, Yadav AK, Karbasian G, Hsu CH, Tan AJ, ... ... Hu C, et al. Enhanced ferroelectricity in ultrathin films grown directly on silicon. Nature. 580: 478-482. PMID 32322080 DOI: 10.1038/S41586-020-2208-X |
0.315 |
|
| 2020 |
Dasgupta A, Parihar SS, Kushwaha P, Agarwal H, Kao M, Salahuddin S, Chauhan YS, Hu C. BSIM Compact Model of Quantum Confinement in Advanced Nanosheet FETs Ieee Transactions On Electron Devices. 67: 730-737. DOI: 10.1109/Ted.2019.2960269 |
0.338 |
|
| 2020 |
Dasgupta A, Parihar SS, Agarwal H, Kushwaha P, Chauhan YS, Hu C. Compact Model for Geometry Dependent Mobility in Nanosheet FETs Ieee Electron Device Letters. 41: 313-316. DOI: 10.1109/Led.2020.2967782 |
0.301 |
|
| 2020 |
Kwon D, Cheema S, Lin Y, Liao Y, Chatterjee K, Tan AJ, Hu C, Salahuddin S. Near Threshold Capacitance Matching in a Negative Capacitance FET With 1 nm Effective Oxide Thickness Gate Stack Ieee Electron Device Letters. 41: 179-182. DOI: 10.1109/Led.2019.2951705 |
0.396 |
|
| 2019 |
Agarwal H, Gupta C, Goel R, Kushwaha P, Lin Y, Kao M, Duarte J, Chang H, Chauhan YS, Salahuddin S, Hu C. BSIM-HV: High-Voltage MOSFET Model Including Quasi-Saturation and Self-Heating Effect Ieee Transactions On Electron Devices. 66: 4258-4263. DOI: 10.1109/Ted.2019.2933611 |
0.34 |
|
| 2019 |
Gupta C, Agarwal H, Goel R, Hu C, Chauhan YS. Improved Modeling of Bulk Charge Effect for BSIM-BULK Model Ieee Transactions On Electron Devices. 66: 2850-2853. DOI: 10.1109/Ted.2019.2910107 |
0.313 |
|
| 2019 |
Lin Y, Agarwal H, Kushwaha P, Kao M, Liao Y, Chatterjee K, Salahuddin S, Hu C. Analysis and Modeling of Inner Fringing Field Effect on Negative Capacitance FinFETs Ieee Transactions On Electron Devices. 66: 2023-2027. DOI: 10.1109/Ted.2019.2899810 |
0.386 |
|
| 2019 |
You W, Su P, Hu C. Evaluation of NC-FinFET Based Subsystem-Level Logic Circuits Ieee Transactions On Electron Devices. 66: 2004-2009. DOI: 10.1109/Ted.2019.2898445 |
0.372 |
|
| 2019 |
Gupta C, Mohamed N, Agarwal H, Goel R, Hu C, Chauhan YS. Accurate and Computationally Efficient Modeling of Nonquasi Static Effects in MOSFETs for Millimeter-Wave Applications Ieee Transactions On Electron Devices. 66: 44-51. DOI: 10.1109/Ted.2018.2854671 |
0.367 |
|
| 2019 |
Liao Y, Kwon D, Lin Y, Tan AJ, Hu C, Salahuddin S. Anomalously Beneficial Gate-Length Scaling Trend of Negative Capacitance Transistors Ieee Electron Device Letters. 40: 1860-1863. DOI: 10.1109/Led.2019.2940715 |
0.369 |
|
| 2019 |
Chatterjee K, Kim S, Karbasian G, Kwon D, Tan AJ, Yadav AK, Serrao CR, Hu C, Salahuddin S. Challenges to Partial Switching of Hf0.8Zr0.2O2 Gated Ferroelectric FET for Multilevel/Analog or Low-Voltage Memory Operation Ieee Electron Device Letters. 40: 1423-1426. DOI: 10.1109/Led.2019.2931430 |
0.338 |
|
| 2019 |
Kwon D, Cheema S, Shanker N, Chatterjee K, Liao Y, Tan AJ, Hu C, Salahuddin S. Negative Capacitance FET With 1.8-nm-Thick Zr-Doped HfO2 Oxide Ieee Electron Device Letters. 40: 993-996. DOI: 10.1109/Led.2019.2912413 |
0.358 |
|
| 2019 |
Kushwaha P, Agarwal H, Lin Y, Dasgupta A, Kao M, Lu Y, Yue Y, Chen X, Wang J, Sy W, Yang F, Chidambaram PC, Salahuddin S, Hu C. Characterization and Modeling of Flicker Noise in FinFETs at Advanced Technology Node Ieee Electron Device Letters. 40: 985-988. DOI: 10.1109/Led.2019.2911614 |
0.313 |
|
| 2019 |
Lin Y, Agarwal H, Kao M, Zhou J, Liao Y, Dasgupta A, Kushwaha P, Salahuddin S, Hu C. Spacer Engineering in Negative Capacitance FinFETs Ieee Electron Device Letters. 40: 1009-1012. DOI: 10.1109/Led.2019.2911104 |
0.361 |
|
| 2019 |
Kao M, Lin Y, Agarwal H, Liao Y, Kushwaha P, Dasgupta A, Salahuddin S, Hu C. Optimization of NCFET by Matching Dielectric and Ferroelectric Nonuniformly Along the Channel Ieee Electron Device Letters. 40: 822-825. DOI: 10.1109/Led.2019.2906314 |
0.325 |
|
| 2019 |
Chen Y, Su C, Hu C, Wu T. Effects of Annealing on Ferroelectric Hafnium–Zirconium–Oxide-Based Transistor Technology Ieee Electron Device Letters. 40: 467-470. DOI: 10.1109/Led.2019.2895833 |
0.37 |
|
| 2019 |
Agarwal H, Kushwaha P, Lin Y, Kao M, Liao Y, Dasgupta A, Salahuddin S, Hu C. Proposal for Capacitance Matching in Negative Capacitance Field-Effect Transistors Ieee Electron Device Letters. 40: 463-466. DOI: 10.1109/Led.2019.2891540 |
0.304 |
|
| 2018 |
Kao M, Sachid AB, Lin Y, Liao Y, Agarwal H, Kushwaha P, Duarte JP, Chang H, Salahuddin S, Hu C. Variation Caused by Spatial Distribution of Dielectric and Ferroelectric Grains in a Negative Capacitance Field-Effect Transistor Ieee Transactions On Electron Devices. 65: 4652-4658. DOI: 10.1109/Ted.2018.2864971 |
0.306 |
|
| 2018 |
Gupta C, Dey S, Agarwal H, Goel R, Hu C, Chauhan YS. Analysis and Modeling of Temperature and Bias Dependence of Current Mismatch in Halo-Implanted MOSFETs Ieee Transactions On Electron Devices. 65: 3608-3616. DOI: 10.1109/Ted.2018.2853989 |
0.375 |
|
| 2018 |
Agarwal H, Kushwaha P, Duarte JP, Lin Y, Sachid AB, Kao M, Chang H, Salahuddin S, Hu C. Engineering Negative Differential Resistance in NCFETs for Analog Applications Ieee Transactions On Electron Devices. 65: 2033-2039. DOI: 10.1109/Ted.2018.2817238 |
0.359 |
|
| 2018 |
Dasgupta A, Rastogi P, Agarwal A, Hu C, Chauhan YS. Compact Modeling of Cross-Sectional Scaling in Gate-All-Around FETs: 3-D to 1-D Transition Ieee Transactions On Electron Devices. 65: 1094-1100. DOI: 10.1109/Ted.2018.2797687 |
0.308 |
|
| 2018 |
Agarwal H, Kushwaha P, Duarte JP, Lin Y, Sachid AB, Chang H, Salahuddin S, Hu C. Designing 0.5 V 5-nm HP and 0.23 V 5-nm LP NC-FinFETs With Improved ${I}_{ \mathrm{\scriptscriptstyle OFF}}$ Sensitivity in Presence of Parasitic Capacitance Ieee Transactions On Electron Devices. 65: 1211-1216. DOI: 10.1109/Ted.2018.2790349 |
0.305 |
|
| 2018 |
Lin Y, Kushwaha P, Duarte JP, Chang H, Agarwal H, Khandelwal S, Sachid AB, Harter M, Watts J, Chauhan YS, Salahuddin S, Hu C. New Mobility Model for Accurate Modeling of Transconductance in FDSOI MOSFETs Ieee Transactions On Electron Devices. 65: 463-469. DOI: 10.1109/Ted.2017.2785248 |
0.367 |
|
| 2018 |
Dabhi CK, Dasgupta A, Kushwaha P, Agarwal H, Hu C, Chauhan YS. Modeling of Induced Gate Thermal Noise Including Back-Bias Effect in FDSOI MOSFET Ieee Microwave and Wireless Components Letters. 28: 597-599. DOI: 10.1109/Lmwc.2018.2834507 |
0.344 |
|
| 2018 |
Agarwal H, Kushwaha P, Lin Y, Kao M, Liao Y, Duarte J, Salahuddin S, Hu C. NCFET Design Considering Maximum Interface Electric Field Ieee Electron Device Letters. 39: 1254-1257. DOI: 10.1109/Led.2018.2849508 |
0.332 |
|
| 2018 |
Kushwaha P, Agarwal H, Lin Y-, Kao M-, Duarte J-, Chang H-, Wong W, Fan J, Xiayu, Chauhan YS, Salahuddin S, Hu C. Modeling of Advanced RF Bulk FinFETs Ieee Electron Device Letters. 39: 791-794. DOI: 10.1109/Led.2018.2825422 |
0.332 |
|
| 2018 |
Kwon D, Chatterjee K, Tan AJ, Yadav AK, Zhou H, Sachid AB, Reis RD, Hu C, Salahuddin S. Improved Subthreshold Swing and Short Channel Effect in FDSOI n-Channel Negative Capacitance Field Effect Transistors Ieee Electron Device Letters. 39: 300-303. DOI: 10.1109/Led.2017.2787063 |
0.364 |
|
| 2018 |
Tan AJ, Yadav AK, Chatterjee K, Kwon D, Kim S, Hu C, Salahuddin S. A Nitrided Interfacial Oxide for Interface State Improvement in Hafnium Zirconium Oxide-Based Ferroelectric Transistor Technology Ieee Electron Device Letters. 39: 95-98. DOI: 10.1109/Led.2017.2772791 |
0.323 |
|
| 2017 |
Gupta C, Agarwal H, Lin YK, Ito A, Hu C, Chauhan YS. Analysis and modeling of zero-threshold voltage native devices with industry standard BSIM6 model Japanese Journal of Applied Physics. 56. DOI: 10.7567/Jjap.56.04Cd09 |
0.407 |
|
| 2017 |
Sahu Y, Kushwaha P, Dasgupta A, Hu C, Chauhan YS. Compact Modeling of Drain Current Thermal Noise in FDSOI MOSFETs Including Back-Bias Effect Ieee Transactions On Microwave Theory and Techniques. 65: 2261-2270. DOI: 10.1109/Tmtt.2017.2666811 |
0.327 |
|
| 2017 |
Sachid AB, Lin H, Hu C. Nanowire FET With Corner Spacer for High-Performance, Energy-Efficient Applications Ieee Transactions On Electron Devices. 64: 5181-5187. DOI: 10.1109/Ted.2017.2764511 |
0.355 |
|
| 2017 |
Lin Y, Kushwaha P, Agarwal H, Chang H, Duarte JP, Sachid AB, Khandelwal S, Salahuddin S, Hu C. Modeling of Back-Gate Effects on Gate-Induced Drain Leakage and Gate Currents in UTB SOI MOSFETs Ieee Transactions On Electron Devices. 64: 3986-3990. DOI: 10.1109/Ted.2017.2735455 |
0.407 |
|
| 2017 |
Lin Y, Duarte JP, Kushwaha P, Agarwal H, Chang H, Sachid A, Salahuddin S, Hu C. Compact Modeling Source-to-Drain Tunneling in Sub-10-nm GAA FinFET With Industry Standard Model Ieee Transactions On Electron Devices. 64: 3576-3581. DOI: 10.1109/Ted.2017.2731162 |
0.339 |
|
| 2017 |
Sachid AB, Chen M, Hu C. Bulk FinFET With Low- $\kappa $ Spacers for Continued Scaling Ieee Transactions On Electron Devices. 64: 1861-1864. DOI: 10.1109/Ted.2017.2664798 |
0.354 |
|
| 2017 |
Lin Y, Khandelwal S, Duarte JP, Chang H, Salahuddin S, Hu C. A Predictive Tunnel FET Compact Model With Atomistic Simulation Validation Ieee Transactions On Electron Devices. 64: 599-605. DOI: 10.1109/Ted.2016.2639547 |
0.311 |
|
| 2017 |
Chatterjee K, Kim S, Karbasian G, Tan AJ, Yadav AK, Khan AI, Hu C, Salahuddin S. Self-Aligned, Gate Last, FDSOI, Ferroelectric Gate Memory Device With 5.5-nm Hf0.8Zr0.2O2, High Endurance and Breakdown Recovery Ieee Electron Device Letters. 38: 1379-1382. DOI: 10.1109/Led.2017.2748992 |
0.364 |
|
| 2017 |
Do HB, Luc QH, Ha MTH, Huynh SH, Nguyen TA, Hu C, Lin YC, Chang EY. Investigation of Mo/Ti/AlN/HfO 2 High-k Metal Gate Stack for Low Power Consumption InGaAs NMOS Device Application Ieee Electron Device Letters. 38: 552-555. DOI: 10.1109/Led.2017.2688389 |
0.358 |
|
| 2017 |
Sachid AB, Huang Y, Chen Y, Chen C, Lu DD, Chen M, Hu C. FinFET With Encased Air-Gap Spacers for High-Performance and Low-Energy Circuits Ieee Electron Device Letters. 38: 16-19. DOI: 10.1109/Led.2016.2628768 |
0.305 |
|
| 2017 |
Khandelwal S, Duarte JP, Khan AI, Salahuddin S, Hu C. Impact of Parasitic Capacitance and Ferroelectric Parameters on Negative Capacitance FinFET Characteristics Ieee Electron Device Letters. 38: 142-144. DOI: 10.1109/Led.2016.2628349 |
0.333 |
|
| 2017 |
Khan AI, Hoffmann M, Chatterjee K, Lu Z, Xu R, Serrao C, Smith S, Martin LW, Hu C, Ramesh R, Salahuddin S. Differential voltage amplification from ferroelectric negative capacitance Applied Physics Letters. 111: 253501. DOI: 10.1063/1.5006958 |
0.31 |
|
| 2017 |
Sachid AB, Desai SB, Javey A, Hu C. High-gain monolithic 3D CMOS inverter using layered semiconductors Applied Physics Letters. 111: 222101. DOI: 10.1063/1.5004669 |
0.389 |
|
| 2016 |
Desai SB, Madhvapathy SR, Sachid AB, Llinas JP, Wang Q, Ahn GH, Pitner G, Kim MJ, Bokor J, Hu C, Wong HP, Javey A. MoS2 transistors with 1-nanometer gate lengths. Science (New York, N.Y.). 354: 99-102. PMID 27846499 DOI: 10.1126/Science.Aah4698 |
0.384 |
|
| 2016 |
Hsieh HJ, Hu CC, Lu TW, Lu HL, Kuo MY, Kuo CC, Hsu HC. Evaluation of three force-position hybrid control methods for a robot-based biological joint-testing system. Biomedical Engineering Online. 15: 62. PMID 27268070 DOI: 10.1186/s12938-016-0195-9 |
0.472 |
|
| 2016 |
Bakaul SR, Serrao CR, Lee M, Yeung CW, Sarker A, Hsu SL, Yadav AK, Dedon L, You L, Khan AI, Clarkson JD, Hu C, Ramesh R, Salahuddin S. Single crystal functional oxides on silicon. Nature Communications. 7: 10547. PMID 26853112 DOI: 10.1038/Ncomms10547 |
0.328 |
|
| 2016 |
Sachid AB, Tosun M, Desai SB, Hsu CY, Lien DH, Madhvapathy SR, Chen YZ, Hettick M, Kang JS, Zeng Y, He JH, Chang EY, Chueh YL, Javey A, Hu C. Monolithic 3D CMOS Using Layered Semiconductors. Advanced Materials (Deerfield Beach, Fla.). PMID 26833783 DOI: 10.1002/Adma.201505113 |
0.356 |
|
| 2016 |
Kompala BK, Kushwaha P, Agarwal H, Khandelwal S, Duarte JP, Hu C, Chauhan YS. Modeling of nonlinear thermal resistance in FinFETs Japanese Journal of Applied Physics. 55. DOI: 10.7567/Jjap.55.04Ed11 |
0.34 |
|
| 2016 |
Kushwaha P, Khandelwal S, Duarte JP, Hu C, Chauhan YS. RF Modeling of FDSOI Transistors Using Industry Standard BSIM-IMG Model Ieee Transactions On Microwave Theory and Techniques. 64: 1745-1751. DOI: 10.1109/Tmtt.2016.2557327 |
0.328 |
|
| 2016 |
Pahwa G, Dutta T, Agarwal A, Khandelwal S, Salahuddin S, Hu C, Chauhan YS. Analysis and Compact Modeling of Negative Capacitance Transistor with High ON-Current and Negative Output Differential Resistance-Part I: Model Description Ieee Transactions On Electron Devices. DOI: 10.1109/Ted.2016.2614432 |
0.359 |
|
| 2016 |
Hsu C, Zeng Y, Chang C, Hu C, Chang EY. Study of Inherent Gate Coupling Nonuniformity of InAs/GaSb Vertical TFETs Ieee Transactions On Electron Devices. 63: 4267-4272. DOI: 10.1109/Ted.2016.2612830 |
0.307 |
|
| 2016 |
Lin YK, Khandelwal S, Medury AS, Agarwal H, Chang HL, Chauhan YS, Hu C. Modeling of Subsurface Leakage Current in Low VTH Short Channel MOSFET at Accumulation Bias Ieee Transactions On Electron Devices. DOI: 10.1109/Ted.2016.2544818 |
0.378 |
|
| 2016 |
Lin CI, Khan AI, Salahuddin S, Hu C. Effects of the Variation of Ferroelectric Properties on Negative Capacitance FET Characteristics Ieee Transactions On Electron Devices. DOI: 10.1109/Ted.2016.2514783 |
0.326 |
|
| 2016 |
Do HB, Luc QH, Ha MTH, Huynh SH, Hu C, Lin YC, Chang EY. Methods for Extracting Flat Band Voltage in the InGaAs High Mobility Materials Ieee Electron Device Letters. 37: 1100-1103. DOI: 10.1109/Led.2016.2594802 |
0.386 |
|
| 2016 |
Sachid AB, Chen M, Hu C. FinFET With High- $\kappa $ Spacers for Improved Drive Current Ieee Electron Device Letters. 37: 835-838. DOI: 10.1109/Led.2016.2572664 |
0.369 |
|
| 2016 |
Khandelwal S, Agarwal H, Kushwaha P, Duarte JP, Medury A, Chauhan YS, Salahuddin S, Hu C. Unified compact model covering drift-diffusion to ballistic carrier transport Ieee Electron Device Letters. 37: 134-137. DOI: 10.1109/Led.2015.2507519 |
0.331 |
|
| 2016 |
Khan AI, Chatterjee K, Duarte JP, Lu Z, Sachid A, Khandelwal S, Ramesh R, Hu C, Salahuddin S. Negative Capacitance in Short-Channel FinFETs Externally Connected to an Epitaxial Ferroelectric Capacitor Ieee Electron Device Letters. 37: 111-114. DOI: 10.1109/Led.2015.2501319 |
0.41 |
|
| 2016 |
Ganeriwala MD, Yadav C, Mohapatra NR, Khandelwal S, Hu C, Chauhan YS. Modeling of Charge and Quantum Capacitance in Low Effective Mass III-V FinFETs Ieee Journal of the Electron Devices Society. 4: 396-401. DOI: 10.1109/Jeds.2016.2586116 |
0.34 |
|
| 2016 |
Hsu CY, Chang CY, Chang EY, Hu C. Suppressing non-uniform tunneling in InAs/GaSb TFET with dual-metal gate Ieee Journal of the Electron Devices Society. 4: 60-65. DOI: 10.1109/Jeds.2015.2514060 |
0.341 |
|
| 2016 |
Roy T, Tosun M, Hettick M, Ahn GH, Hu C, Javey A. 2D-2D tunneling field-effect transistors using WSe2/SnSe2 heterostructures Applied Physics Letters. 108. DOI: 10.1063/1.4942647 |
0.355 |
|
| 2016 |
Kushwaha P, Bala Krishna K, Agarwal H, Khandelwal S, Duarte JP, Hu C, Chauhan YS. Thermal resistance modeling in FDSOI transistors with industry standard model BSIM-IMG Microelectronics Journal. 56: 171-176. DOI: 10.1016/J.Mejo.2016.07.014 |
0.364 |
|
| 2015 |
Liu Y, Zhang Y, Wu J, Zhu D, Sun S, Zhao L, Wang X, Liu H, Ren Z, Wang C, Xiu Q, Xiao Z, Cao Z, Cui S, Yang H, ... ... Hu C, et al. A randomized, double-blind, multicenter Phase II study comparing the efficacy and safety of oral nemonoxacin with oral levofloxacin in the treatment of community-acquired pneumonia. Journal of Microbiology, Immunology, and Infection = Wei Mian Yu Gan Ran Za Zhi. PMID 26748734 DOI: 10.1016/J.Jmii.2015.09.005 |
0.404 |
|
| 2015 |
Hu CH, Fufa D, Hsu CC, Lin YT, Lin CH. Revisiting spontaneous rupture of the extensor pollicis longus tendon: eight cases without identifiable predisposing factor. Hand (New York, N.Y.). 10: 726-31. PMID 26568731 DOI: 10.1007/s11552-015-9746-y |
0.479 |
|
| 2015 |
Hu CY, Lin CH. Reverse ray tracing for transformation optics. Optics Express. 23: 17622-37. PMID 26191770 |
0.498 |
|
| 2015 |
Hu CC, Lin CL, Chang LC, Chien CH, Chen LW, Liu CJ, Chien RN. Interleukin-28B gene non-TT allele strongly predicts treatment failure for genotype 1 infected chronic hepatitis C patients with advanced fibrosis: a case control study. Bmc Infectious Diseases. 15: 156. PMID 25888020 DOI: 10.1186/s12879-015-0888-x |
0.425 |
|
| 2015 |
Barsanti PA, Pan Y, Lu Y, Jain R, Cox M, Aversa RJ, Dillon MP, Elling R, Hu C, Jin X, Knapp M, Lan J, Ramurthy S, Rudewicz P, Setti L, et al. Structure-Based Drug Design of Novel, Potent, and Selective Azabenzimidazoles (ABI) as ATR Inhibitors. Acs Medicinal Chemistry Letters. 6: 42-6. PMID 25589928 DOI: 10.1021/ml500352s |
0.404 |
|
| 2015 |
Lin YT, Su ST, Lo S, Hu CH, Lin CH, Wei FC. Risk factors for reexploration in toe-to-hand transfer: a multivariate analysis of 363 cases. Plastic and Reconstructive Surgery. 135: 501-6. PMID 25357159 DOI: 10.1097/PRS.0000000000000884 |
0.479 |
|
| 2015 |
Zeng Y, Kuo CI, Hsu C, Najmzadeh M, Sachid A, Kapadia R, Yeung C, Chang E, Hu C, Javey A. Quantum Well InAs/AlSb/GaSb Vertical Tunnel FET with HSQ Mechanical Support Ieee Transactions On Nanotechnology. 14: 580-584. DOI: 10.1109/Tnano.2015.2419232 |
0.353 |
|
| 2015 |
Yadav C, Duarte JP, Khandelwal S, Agarwal A, Hu C, Chauhan YS. Capacitance Modeling in III-V FinFETs Ieee Transactions On Electron Devices. DOI: 10.1109/Ted.2015.2480380 |
0.372 |
|
| 2015 |
Fahad HM, Hu C, Hussain MM. Simulation Study of a 3-D Device Integrating FinFET and UTBFET Ieee Transactions On Electron Devices. 62: 83-87. DOI: 10.1109/Ted.2014.2372695 |
0.317 |
|
| 2015 |
Khandelwal S, Agarwal H, Duarte JP, Chan K, Dey S, Chauhan YS, Hu C. Modeling STI Edge Parasitic Current for Accurate Circuit Simulations Ieee Transactions On Computer-Aided Design of Integrated Circuits and Systems. 34: 1291-1294. DOI: 10.1109/Tcad.2015.2419626 |
0.362 |
|
| 2015 |
Yao K, Khandelwal S, Sammoura F, Kazama A, Hu C, Lin L. Piezoelectricity-induced schottky barrier height variations in AlGaN/GaN high electron mobility transistors Ieee Electron Device Letters. 36: 902-904. DOI: 10.1109/Led.2015.2456178 |
0.33 |
|
| 2015 |
Khandelwal S, Duarte JP, Medury A, Chauhan YS, Salahuddin S, Hu C. Modeling SiGe FinFETs with Thin Fin and Current-Dependent Source/Drain Resistance Ieee Electron Device Letters. 36: 636-638. DOI: 10.1109/Led.2015.2437794 |
0.344 |
|
| 2015 |
Agarwal H, Khandelwal S, Dey S, Hu C, Chauhan YS. Analytical modeling of flicker noise in halo implanted MOSFETs Ieee Journal of the Electron Devices Society. 3: 355-360. DOI: 10.1109/Jeds.2015.2424686 |
0.308 |
|
| 2015 |
Agarwal H, Gupta C, Kushwaha P, Yadav C, Duarte JP, Khandelwal S, Hu C, Chauhan YS. Analytical modeling and experimental validation of threshold voltage in BSIM6 MOSFET model Ieee Journal of the Electron Devices Society. 3: 240-243. DOI: 10.1109/Jeds.2015.2415584 |
0.359 |
|
| 2015 |
Kushwaha P, Paydavosi N, Khandelwal S, Yadav C, Agarwal H, Duarte JP, Hu C, Chauhan YS. Modeling the impact of substrate depletion in FDSOI MOSFETs Solid-State Electronics. 104: 6-11. DOI: 10.1016/J.Sse.2014.11.002 |
0.339 |
|
| 2014 |
Hu C, Zhang S, Jin X, Tong L. [Meilian Xiaoke capsule combined with metformin for protecting islet cells and lowering blood glucose in diabetic rats]. Nan Fang Yi Ke Da Xue Xue Bao = Journal of Southern Medical University. 34: 1365-9. PMID 25263377 |
0.362 |
|
| 2014 |
Yin W, Zhou R, Wu H, Zuo Y, Wang B, Hu C, Jin X, Wang X, Kang Y. [Value of focused critical ultrasound in the treatment of critical patients in Lushan earthquake]. Zhonghua Yi Xue Za Zhi. 94: 1135-8. PMID 24924709 |
0.37 |
|
| 2014 |
Mahajan A, Go MJ, Zhang W, Below JE, Gaulton KJ, Ferreira T, Horikoshi M, Johnson AD, Ng MC, Prokopenko I, ... ... Hu C, et al. Genome-wide trans-ancestry meta-analysis provides insight into the genetic architecture of type 2 diabetes susceptibility. Nature Genetics. 46: 234-44. PMID 24509480 DOI: 10.1038/Ng.2897 |
0.423 |
|
| 2014 |
Chauhan YS, Venugopalan S, Chalkiadaki MA, Karim MAU, Agarwal H, Khandelwal S, Paydavosi N, Duarte JP, Enz CC, Niknejad AM, Hu C. BSIM6: Analog and RF compact model for bulk MOSFET Ieee Transactions On Electron Devices. 61: 234-244. DOI: 10.1109/Ted.2013.2283084 |
0.618 |
|
| 2014 |
Khandelwal S, Duarte JP, Chauhan YS, Hu C. Modeling 20-nm Germanium FinFET with the industry standard FinFET model Ieee Electron Device Letters. 35: 711-713. DOI: 10.1109/Led.2014.2323956 |
0.363 |
|
| 2014 |
Yadav C, Kushwaha P, Khandelwal S, Duarte JP, Chauhan YS, Hu C. Modeling of GaN-based normally-off FinFET Ieee Electron Device Letters. 35: 612-614. DOI: 10.1109/Led.2014.2314700 |
0.373 |
|
| 2013 |
Hsu PY, Lee KK, Lee PS, Hu CC, Lin CH, Liu PC. Biochemical characterization of a phospholipase A2 from Photobacterium damselae subsp. piscicida. Zeitschrift FüR Naturforschung. C, Journal of Biosciences. 68: 471-81. PMID 24601085 |
0.495 |
|
| 2013 |
Hu CH, Lin CH, Chang NJ, Hu CW, Lin CH. Urinary excretion of oxidative damage markers in a rat model of vascularized composite allotransplantation. Plastic and Reconstructive Surgery. 132: 530e-541e. PMID 24076700 DOI: 10.1097/PRS.0b013e3182a0141f |
0.501 |
|
| 2013 |
Zima V, Raja DS, Lee YS, Chang TG, Wu CY, Hu CC, Lee KR, Lai JY, Yeh JM, Lin CH. Alkaline-earth metal phosphonocarboxylates: synthesis, structures, chirality, and luminescence properties. Dalton Transactions (Cambridge, England : 2003). 42: 15332-42. PMID 24002544 DOI: 10.1039/c3dt51375k |
0.501 |
|
| 2013 |
Liu PH, Chuang FJ, Tu CY, Hu CH, Lin TW, Wang YT, Lin CH, Datta A, Huang JH. Aluminum complexes incorporating symmetrical and asymmetrical tridentate pincer type pyrrolyl ligands: synthesis, characterization and reactivity study. Dalton Transactions (Cambridge, England : 2003). 42: 13754-64. PMID 23907274 DOI: 10.1039/c3dt51133b |
0.492 |
|
| 2013 |
Cong M, Hu CM, Cao YF, Fang ZZ, Tang SH, Wang JR, Luo JS. Cryptotanshinone and dihydrotanshinone I exhibit strong inhibition towards human liver microsome (HLM)-catalyzed propofol glucuronidation. Fitoterapia. 85: 109-13. PMID 23333907 DOI: 10.1016/j.fitote.2013.01.002 |
0.429 |
|
| 2013 |
Cheng JY, Yeung CW, Hu C. Extraction of front and buried oxide interface trap densities in fully depleted silicon-on-insulator metal-oxide-semiconductor field-effect transistor Ecs Solid State Letters. 2. DOI: 10.1149/2.001305Ssl |
0.352 |
|
| 2013 |
Zeng Y, Kuo CI, Kapadia R, Hsu CY, Javey A, Hu C. Two-dimensional to three-dimensional tunneling in InAs/AlSb/GaSb quantum well heterojunctions Journal of Applied Physics. 114. DOI: 10.1063/1.4812563 |
0.324 |
|
| 2012 |
Chang LC, Wu HN, Lin CY, Lai YH, Hu CW, Ho KC. One-pot synthesis of poly (3,4-ethylenedioxythiophene)-Pt nanoparticle composite and its application to electrochemical H2O2 sensor. Nanoscale Research Letters. 7: 319. PMID 22716478 DOI: 10.1186/1556-276X-7-319 |
0.451 |
|
| 2012 |
Cho YS, Chen CH, Hu C, Long J, Ong RT, Sim X, Takeuchi F, Wu Y, Go MJ, Yamauchi T, Chang YC, Kwak SH, Ma RC, Yamamoto K, Adair LS, et al. Meta-analysis of genome-wide association studies identifies eight new loci for type 2 diabetes in east Asians. Nature Genetics. 44: 67-72. PMID 22158537 DOI: 10.1038/Ng.1019 |
0.418 |
|
| 2012 |
Sachid AB, Hu C. Denser and More Stable SRAM Using FinFETs With Multiple Fin Heights Ieee Transactions On Electron Devices. 59: 2037-2041. DOI: 10.1109/Ted.2012.2199759 |
0.316 |
|
| 2012 |
Karim MA, Chauhan YS, Venugopalan S, Sachid AB, Lu DD, Nguyen BY, Faynot O, Niknejad AM, Hu C. Extraction of isothermal condition and thermal network in UTBB SOI MOSFETs Ieee Electron Device Letters. 33: 1306-1308. DOI: 10.1109/Led.2012.2205659 |
0.556 |
|
| 2012 |
Lien YC, Shieh JM, Huang WH, Tu CH, Wang C, Shen CH, Dai BT, Pan CL, Hu C, Yang FL. Fast programming metal-gate Si quantum dot nonvolatile memory using green nanosecond laser spike annealing Applied Physics Letters. 100. DOI: 10.1063/1.3700729 |
0.317 |
|
| 2012 |
Venugopalan S, Lu DD, Kawakami Y, Lee PM, Niknejad AM, Hu C. BSIM-CG: A compact model of cylindrical/surround gate MOSFET for circuit simulations Solid-State Electronics. 67: 79-89. DOI: 10.1016/J.Sse.2011.09.001 |
0.631 |
|
| 2011 |
Huang WY, Chuang SJ, Chunag NT, Hsiao CS, Datta A, Chen SJ, Hu CH, Huang JH, Lee TY, Lin CH. Aluminium complexes containing bidentate and symmetrical tridentate pincer type pyrrolyl ligands: synthesis, reactions and ring opening polymerization. Dalton Transactions (Cambridge, England : 2003). 40: 7423-33. PMID 21695289 DOI: 10.1039/c1dt10442j |
0.486 |
|
| 2011 |
Hu CB, Chen CP, Yeh TK, Song JS, Chang CY, Chuu JJ, Tung FF, Ho PY, Chen TW, Lin CH, Wang MH, Chang KY, Huang CL, Lin HL, Li WT, et al. BPR0C261 is a novel orally active antitumor agent with antimitotic and anti-angiogenic activities. Cancer Science. 102: 182-91. PMID 21040217 DOI: 10.1111/j.1349-7006.2010.01744.x |
0.489 |
|
| 2011 |
Chen H, Chen C, Hsueh F, Liu J, Shy S, Wu C, Chien C, Hu C, Huang C, Yang F. A Novel Nanoinjection Lithography (NInL) Technology and Its Application for 16-nm Node Device Fabrication Ieee Transactions On Electron Devices. 58: 3678-3686. DOI: 10.1109/Ted.2011.2163938 |
0.355 |
|
| 2011 |
Ford AC, Yeung CW, Chuang S, Kim HS, Plis E, Krishna S, Hu C, Javey A. Ultrathin body InAs tunneling field-effect transistors on Si substrates Applied Physics Letters. 98: 113105. DOI: 10.1063/1.3567021 |
0.371 |
|
| 2011 |
Loh WY, Jeon K, Kang CY, Oh J, King Liu TJ, Tseng HH, Xiong W, Majhi P, Jammy R, Hu C. Highly scaled (Lg ∼ 56 nm) gate-last Si tunnel field-effect transistors with ION > 100 μa/μm Solid-State Electronics. 65: 22-27. DOI: 10.1016/J.Sse.2011.06.019 |
0.553 |
|
| 2011 |
Lu DD, Dunga MV, Lin CH, Niknejad AM, Hu C. A computationally efficient compact model for fully-depleted SOI MOSFETs with independently-controlled front- and back-gates Solid-State Electronics. 62: 31-39. DOI: 10.1016/J.Sse.2010.12.015 |
0.366 |
|
| 2010 |
Lin CH, Hu CK, Shih HM. Clathrin heavy chain mediates TACC3 targeting to mitotic spindles to ensure spindle stability. The Journal of Cell Biology. 189: 1097-105. PMID 20566684 DOI: 10.1083/Jcb.200911120 |
0.482 |
|
| 2010 |
Chien CH, Chien RN, Yen CL, Fang KM, Liu CJ, Lin CL, Chang JJ, Chen LW, Lee TS, Chen SW, Hu CC, Chang LC. The role of endoscopic ultrasonography examination for evaluation and surveillance of gastric subepithelial masses. Chang Gung Medical Journal. 33: 73-81. PMID 20184798 |
0.417 |
|
| 2010 |
Li WT, Hwang DR, Song JS, Chen CP, Chuu JJ, Hu CB, Lin HL, Huang CL, Huang CY, Tseng HY, Lin CC, Chen TW, Lin CH, Wang HS, Shen CC, et al. Synthesis and biological activities of 2-amino-1-arylidenamino imidazoles as orally active anticancer agents. Journal of Medicinal Chemistry. 53: 2409-17. PMID 20170097 DOI: 10.1021/jm901501s |
0.486 |
|
| 2010 |
Lien YL, Chang YC, Chuang NT, Datta A, Chen SJ, Hu CH, Huang WY, Lin CH, Huang JH. A new type of asymmetric tridentate pyrrolyl-linked pincer ligand and its aluminum dihydride complexes. Inorganic Chemistry. 49: 136-43. PMID 19950963 DOI: 10.1021/ic9016189 |
0.488 |
|
| 2010 |
Lu DD, Lin CH, Niknejad AM, Hu C. Compact modeling of variation in FinFET SRAM cells Ieee Design and Test of Computers. 27: 44-50. DOI: 10.1109/Mdt.2010.39 |
0.594 |
|
| 2010 |
Kim SH, Agarwal S, Jacobson ZA, Matheu P, Hu C, Liu TJK. Tunnel field effect transistor with raised germanium source Ieee Electron Device Letters. 31: 1107-1109. DOI: 10.1109/Led.2010.2061214 |
0.336 |
|
| 2009 |
Hu JZ, Hu CY, Duan WD, Gao H, Zhang X, Tang ZR, Lu YW, Zhang FX, Jin D, Yang KJ, Lin XB, Yang H, Shu MY, Zhang YH, Liu TB, et al. [Survey on mental disorders among registered residents and non-registered residents in Shenzhen]. Zhonghua Liu Xing Bing Xue Za Zhi = Zhonghua Liuxingbingxue Zazhi. 30: 543-8. PMID 19957615 |
0.395 |
|
| 2009 |
Chen IC, Ho SM, Chen YC, Lin CY, Hu CH, Tu CY, Datta A, Huang JH, Lin CH. Deprotonation and reductive addition reactions of hypervalent aluminium dihydride compounds containing substituted pyrrolyl ligands with phenols, ketones, and aldehydes. Dalton Transactions (Cambridge, England : 2003). 8631-43. PMID 19809740 DOI: 10.1039/b908164j |
0.492 |
|
| 2009 |
Lin CH, Dunga MV, Lu DD, Niknejad AM, Hu C. Performance-aware corner model for design for manufacturing Ieee Transactions On Electron Devices. 56: 595-600. DOI: 10.1109/Ted.2008.2011845 |
0.575 |
|
| 2008 |
Chao MR, Wang CJ, Wu MT, Pan CH, Kuo CY, Yang HJ, Chang LW, Hu CW. Repeated measurements of urinary methylated/oxidative DNA lesions, acute toxicity, and mutagenicity in coke oven workers. Cancer Epidemiology, Biomarkers & Prevention : a Publication of the American Association For Cancer Research, Cosponsored by the American Society of Preventive Oncology. 17: 3381-9. PMID 19064554 DOI: 10.1158/1055-9965.Epi-08-0721 |
0.443 |
|
| 2008 |
Cheng YW, Chang CY, Lin KL, Hu CM, Lin CH, Kang JJ. Shikonin derivatives inhibited LPS-induced NOS in RAW 264.7 cells via downregulation of MAPK/NF-kappaB signaling. Journal of Ethnopharmacology. 120: 264-71. PMID 18835347 DOI: 10.1016/j.jep.2008.09.002 |
0.491 |
|
| 2008 |
Tseng YP, Kuo YH, Hu CP, Jeng KS, Janmanchi D, Lin CH, Chou CK, Yeh SF. The role of helioxanthin in inhibiting human hepatitis B viral replication and gene expression by interfering with the host transcriptional machinery of viral promoters. Antiviral Research. 77: 206-14. PMID 18249449 DOI: 10.1016/j.antiviral.2007.12.011 |
0.484 |
|
| 2008 |
Hokazono A, Balasubramanian S, Ishimaru K, Ishiuchi H, Hu C, Liu T-K. Forward Body Biasing as a Bulk-Si CMOS Technology Scaling Strategy Ieee Transactions On Electron Devices. 55: 2657-2664. DOI: 10.1109/Ted.2008.2003029 |
0.367 |
|
| 2008 |
Yasuda Y, Liu TK, Hu C. Flicker-Noise Impact on Scaling of Mixed-Signal CMOS With HfSiON Ieee Transactions On Electron Devices. 55: 417-422. DOI: 10.1109/Ted.2007.910759 |
0.329 |
|
| 2008 |
Hu C. BSIM - Making the first international standard MOSFET model Science in China, Series F: Information Sciences. 51: 765-773. DOI: 10.1007/S11432-008-0053-X |
0.306 |
|
| 2007 |
Lin CH, Tsai YC, Hu CK. Wrapping conformations of a polymer on a curved surface. Physical Review. E, Statistical, Nonlinear, and Soft Matter Physics. 75: 031903. PMID 17500722 |
0.489 |
|
| 2007 |
Chen SW, Lee TS, Hu CC, Chang LC, Chien RN. Simultaneously acute hepatitis B virus and C virus coinfection and subsequent chronic hepatitis C. Scandinavian Journal of Infectious Diseases. 39: 351-4. PMID 17454901 DOI: 10.1080/00365540600951358 |
0.404 |
|
| 2007 |
Wang SC, Lin CH, Ou TT, Wu CC, Tsai WC, Hu CJ, Liu HW, Yen JH. Ligands for programmed cell death 1 gene in patients with systemic lupus erythematosus. The Journal of Rheumatology. 34: 721-5. PMID 17343323 |
0.489 |
|
| 2007 |
Chao MR, Wang CJ, Yen CC, Yang HH, Lu YC, Chang LW, Hu CW. Simultaneous determination of N7-alkylguanines in DNA by isotope-dilution LC-tandem MS coupled with automated solid-phase extraction and its application to a small fish model. The Biochemical Journal. 402: 483-90. PMID 17134374 DOI: 10.1042/Bj20061447 |
0.438 |
|
| 2007 |
Hu C, Wu YCS, Gong J. Comparison of Ni-Metal Induced Lateral Crystallization Thin-Film Transistors Fabricated by Rapid Thermal Annealing and Conventional Furnace Annealing at 565 °C Japanese Journal of Applied Physics. 46: 7204-7207. DOI: 10.1143/Jjap.46.7204 |
0.339 |
|
| 2007 |
Lin C, Wu C, Wu C, Lee T, Yang F, Hu C, Tseng T. Effect of Top Electrode Material on Resistive Switching Properties of $\hbox{ZrO}_{2}$ Film Memory Devices Ieee Electron Device Letters. 28: 366-368. DOI: 10.1109/Led.2007.894652 |
0.305 |
|
| 2007 |
Lin CY, Wu CY, Wu CY, Tseng T, Hu C. Modified resistive switching behavior of ZrO2 memory films based on the interface layer formed by using Ti top electrode Journal of Applied Physics. 102: 94101. DOI: 10.1063/1.2802990 |
0.307 |
|
| 2006 |
Hu CW, Wang CJ, Chang LW, Chao MR. Clinical-scale high-throughput analysis of urinary 8-oxo-7,8-dihydro-2'-deoxyguanosine by isotope-dilution liquid chromatography-tandem mass spectrometry with on-line solid-phase extraction. Clinical Chemistry. 52: 1381-8. PMID 16690738 DOI: 10.1373/Clinchem.2005.063735 |
0.441 |
|
| 2006 |
Yen JH, Lin CH, Tsai WC, Wu CC, Ou TT, Hu CJ, Liu HW. Killer cell immunoglobulin-like receptor gene's repertoire in rheumatoid arthritis. Scandinavian Journal of Rheumatology. 35: 124-7. PMID 16641046 DOI: 10.1080/03009740500381252 |
0.497 |
|
| 2006 |
Hu CW, Pan CH, Huang YL, Wu MT, Chang LW, Wang CJ, Chao MR. Effects of arsenic exposure among semiconductor workers: a cautionary note on urinary 8-oxo-7,8-dihydro-2'-deoxyguanosine. Free Radical Biology & Medicine. 40: 1273-8. PMID 16545696 DOI: 10.1016/J.Freeradbiomed.2005.12.003 |
0.446 |
|
| 2006 |
Yen JH, Lin CH, Tsai WC, Ou TT, Wu CC, Hu CJ, Liu HW. Natural resistance-associated macrophage protein 1 gene polymorphisms in rheumatoid arthritis. Immunology Letters. 102: 91-7. PMID 16125248 DOI: 10.1016/j.imlet.2005.07.008 |
0.492 |
|
| 2006 |
Chao MR, Wang CJ, Chang LW, Hu CW. Quantitative determination of urinary N7-ethylguanine in smokers and non-smokers using an isotope dilution liquid chromatography/tandem mass spectrometry with on-line analyte enrichment. Carcinogenesis. 27: 146-51. PMID 16000398 DOI: 10.1093/Carcin/Bgi177 |
0.433 |
|
| 2006 |
Li T, Ho W, Chen H, Wang HC-, Chang C, Hu C. Novel dual-metal gate technology using Mo-MoSi/sub x/ combination Ieee Transactions On Electron Devices. 53: 1420-1426. DOI: 10.1109/Ted.2006.874227 |
0.363 |
|
| 2006 |
Dunga MV, Lin CH, Xi X, Lu DD, Niknejad AM, Hu C. Modeling advanced FET technology in a compact model Ieee Transactions On Electron Devices. 53: 1971-1977. DOI: 10.1109/Ted.2005.881001 |
0.62 |
|
| 2006 |
Hokazono A, Balasubramanian S, Ishimaru K, Ishiuchi H, Hu C, Liu TK. MOSFET hot-carrier reliability improvement by forward-body bias Ieee Electron Device Letters. 27: 605-608. DOI: 10.1109/Led.2006.877306 |
0.381 |
|
| 2006 |
Hokazono A, Balasubramanian S, Ishimaru K, Ishiuchi H, Liu TK, Hu C. MOSFET design for forward body biasing scheme Ieee Electron Device Letters. 27: 387-389. DOI: 10.1109/Led.2006.873382 |
0.352 |
|
| 2006 |
Hu J, Xi X, Niknejad A, Hu C. On gate leakage current partition for MOSFET compact model Solid-State Electronics. 50: 1740-1743. DOI: 10.1016/J.Sse.2006.09.016 |
0.346 |
|
| 2005 |
Chao MR, Wang CJ, Yang HH, Chang LW, Hu CW. Rapid and sensitive quantification of urinary N7-methylguanine by isotope-dilution liquid chromatography/electrospray ionization tandem mass spectrometry with on-line solid-phase extraction. Rapid Communications in Mass Spectrometry : Rcm. 19: 2427-32. PMID 16059882 DOI: 10.1002/Rcm.2082 |
0.432 |
|
| 2005 |
Yen CC, Chen YJ, Pan CC, Lu KH, Chen PC, Hsia JY, Chen JT, Wu YC, Hsu WH, Wang LS, Huang MH, Huang BS, Hu CP, Chen PM, Lin CH. Copy number changes of target genes in chromosome 3q25.3-qter of esophageal squamous cell carcinoma: TP63 is amplified in early carcinogenesis but down-regulated as disease progressed. World Journal of Gastroenterology : Wjg. 11: 1267-72. PMID 15761962 DOI: 10.3748/wjg.v11.i9.1267 |
0.489 |
|
| 2004 |
Yen JH, Tsai WC, Lin CH, Ou TT, Hu CJ, Liu HW. Cytochrome p450 1Al gene polymorphisms in patients with psoriatic arthritis. Scandinavian Journal of Rheumatology. 33: 19-23. PMID 15124938 |
0.498 |
|
| 2004 |
Yen JH, Tsai WC, Lin CH, Ou TT, Hu CJ, Liu HW. Cytochrome P450 1A1 and manganese superoxide dismutase gene polymorphisms in Behçet's disease. The Journal of Rheumatology. 31: 736-40. PMID 15088300 |
0.496 |
|
| 2004 |
Orshansky M, Milor L, Hu C. Characterization of spatial intrafield gate CD variability, its impact on circuit performance, and spatial mask-level correction Ieee Transactions On Semiconductor Manufacturing. 17: 2-11. DOI: 10.1109/Tsm.2003.822735 |
0.726 |
|
| 2004 |
Kuo C, King T, Hu C. Bias polarity dependent effects of P+floating gate EEPROMs Ieee Transactions On Electron Devices. 51: 282-285. DOI: 10.1109/Ted.2003.821702 |
0.356 |
|
| 2004 |
Chan M, Su P, Wan H, Lin C, Fung SK, Niknejad AM, Hu C, Ko PK. Modeling the floating-body effects of fully depleted, partially depleted, and body-grounded SOI MOSFETs Solid-State Electronics. 48: 969-978. DOI: 10.1016/J.Sse.2003.12.012 |
0.567 |
|
| 2003 |
Yen JH, Tsai WC, Lin CH, Ou TT, Hu CJ, Liu HW. Manganese superoxide dismutase gene polymorphisms in psoriatic arthritis. Disease Markers. 19: 263-5. PMID 15266664 |
0.501 |
|
| 2003 |
Yen JH, Tsai WC, Lin CH, Ou TT, Hu CJ, Liu HW. Cytochrome P450 1A1 and manganese superoxide dismutase genes polymorphisms in reactive arthritis. Immunology Letters. 90: 151-4. PMID 14687717 |
0.504 |
|
| 2003 |
Yen JH, Chen CJ, Tsai WC, Lin CH, Ou TT, Hu CJ, Liu HW. Cytochrome P450 and manganese superoxide dismutase genes polymorphisms in systemic lupus erythematosus. Immunology Letters. 90: 19-24. PMID 14611903 DOI: 10.1016/S0165-2478(03)00157-3 |
0.498 |
|
| 2003 |
Yen CC, Chen YJ, Lu KH, Hsia JY, Chen JT, Hu CP, Chen PM, Liu JH, Chiou TJ, Wang WS, Yang MH, Chao TC, Lin CH. Genotypic analysis of esophageal squamous cell carcinoma by molecular cytogenetics and real-time quantitative polymerase chain reaction. International Journal of Oncology. 23: 871-81. PMID 12963965 |
0.482 |
|
| 2003 |
Yen JH, Tsai WC, Chen CJ, Lin CH, Ou TT, Hu CJ, Liu HW. Cytochrome P450 1A1 and manganese superoxide dismutase genes polymorphisms in ankylosing spondylitis. Immunology Letters. 88: 113-6. PMID 12880680 DOI: 10.1016/S0165-2478(03)00071-3 |
0.498 |
|
| 2003 |
Yen JH, Tsai WC, Chen CJ, Ou TT, Lin CH, Hu CJ, Liu HW. Tumor necrosis factor receptor 2 microsatellite and exon 6 polymorphisms in rheumatoid arthritis in Taiwan. The Journal of Rheumatology. 30: 438-42. PMID 12610797 |
0.491 |
|
| 2003 |
Yen JH, Chen CJ, Tsai WC, Lin CH, Ou TT, Hu CJ, Liu HW. Manganese superoxide dismutase and cytochrome P450 1A1 genes polymorphisms in rheumatoid arthritis in Taiwan. Human Immunology. 64: 366-73. PMID 12590982 DOI: 10.1016/S0198-8859(02)00818-2 |
0.5 |
|
| 2003 |
Ha D, Ranade P, Choi YK, Lee JS, King TJ, Hu C. Molybdenum Gate Work Function Engineering for Ultra-Thin-Body Silicon-on-Insulator (UTB SOI) MOSFETs Japanese Journal of Applied Physics. 42: 1979-1982. DOI: 10.1143/Jjap.42.1979 |
0.554 |
|
| 2003 |
Yeo Y, King T, Hu C. MOSFET gate leakage modeling and selection guide for alternative gate dielectrics based on leakage considerations Ieee Transactions On Electron Devices. 50: 1027-1035. DOI: 10.1109/Ted.2003.812504 |
0.579 |
|
| 2003 |
Cao Y, Orshansky M, Sato T, Sylvester D, Hu C. Spice up your MOSFET modelling Ieee Circuits & Devices. 19: 17-23. DOI: 10.1109/Mcd.2003.1217613 |
0.736 |
|
| 2003 |
Chang L, Choi YK, Kedzierski J, Lindert N, Xuan P, Bokor J, Hu C, King TJ. Moore's law lives on Ieee Circuits and Devices Magazine. 19: 35-42. DOI: 10.1109/Mcd.2003.1175106 |
0.8 |
|
| 2003 |
Lam S, Wan H, Su P, Wyatt PW, Chen CL, Niknejad AM, Hu C, Ko PK, Chan M. RF characterization of metal T-gate structure in fully-depleted SOI CMOS technology Ieee Electron Device Letters. 24: 251-253. DOI: 10.1109/Led.2003.810892 |
0.328 |
|
| 2003 |
Su P, Fung SKH, Wyatt PW, Wan H, Niknejad AM, Chan M, Hu C. On the body-source built-in potential lowering of SOI MOSFETs Ieee Electron Device Letters. 24: 90-92. DOI: 10.1109/Led.2002.807696 |
0.319 |
|
| 2003 |
Cao Y, Groves RA, Huang X, Zamdmer ND, Plouchart J-, Wachnik RA, King T, Hu C. Frequency-independent equivalent-circuit model for on-chip spiral inductors Ieee Journal of Solid-State Circuits. 38: 419-426. DOI: 10.1109/Jssc.2002.808285 |
0.308 |
|
| 2003 |
Yang KJ, King TJ, Hu C, Levy S, Al-Shareef HN. Electron mobility in MOSFETs with ultrathin RTCVD silicon nitride/oxynitride stacked gate dielectrics Solid-State Electronics. 47: 149-153. DOI: 10.1016/S0038-1101(02)00309-X |
0.346 |
|
| 2003 |
Chan M, Xi X, He J, Cao KM, Dunga MV, Niknejad AM, Ko PK, Hu C. Practical compact modeling approaches and options for sub-0.1 μm CMOS technologies Microelectronics Reliability. 43: 399-404. DOI: 10.1016/S0026-2714(02)00278-0 |
0.309 |
|
| 2002 |
Yang KJ, Takeuchi H, King T, Hu C. Frequency Dependence of Capacitance Measurement for Advanced Gate Dielectrics The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.2002.P4-7 |
0.534 |
|
| 2002 |
Ha D, Ranade P, Choi Y, Lee J, King T, Hu C. Ultra Thin Body Silicon-On-Insulator (UTB SOI) MOSFET with Metal Gate Work-function Engineering for sub-70 nm Technology Node The Japan Society of Applied Physics. 782-783. DOI: 10.7567/Ssdm.2002.D-7-2 |
0.51 |
|
| 2002 |
Lin C, Wang C, Ge C, Huang C, Chang T, Yao L, Chen S, Liang M, Yang F, Yeo Y, Hu C. Novel Strained-Si Substrate Technology for Transistor Performance Enhancement The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.2002.A-1-3 |
0.487 |
|
| 2002 |
Chang L, Yang KJ, Yeo YC, Polishchuk I, King TJ, Hu C. Direct-tunneling gate leakage current in double-gate and ultrathin body MOSFETs Ieee Transactions On Electron Devices. 49: 2288-2294. DOI: 10.1109/Ted.2002.807446 |
0.789 |
|
| 2002 |
He J, Xi X, Chan M, Hu C, Li Y, Zhang X, Huang R, Wang Y. Equivalent junction method to predict 3-D effect of curved-abrupt p-n junctions Ieee Transactions On Electron Devices. 49: 1322-1325. DOI: 10.1109/Ted.2002.1013296 |
0.354 |
|
| 2002 |
Su P, Goto K, Sugii T, Hu C. A thermal activation view of low voltage impact ionization in MOSFETs Ieee Electron Device Letters. 23: 550-552. DOI: 10.1109/Led.2002.802653 |
0.319 |
|
| 2002 |
He J, Xi X, Chan M, Cao K, Hu C, Li Y, Zhang X, Huang R, Wang Y. Normalized mutual integral difference method to extract threshold voltage of MOSFETs Ieee Electron Device Letters. 23: 428-430. DOI: 10.1109/Led.2002.1015230 |
0.546 |
|
| 2002 |
Hu C, King T, Hu C. A capacitorless double-gate DRAM cell Ieee Electron Device Letters. 23: 345-347. DOI: 10.1109/Led.2002.1004230 |
0.318 |
|
| 2002 |
Yeo Y, Ranade P, King T, Hu C. Effects of high-/spl kappa/ gate dielectric materials on metal and silicon gate workfunctions Ieee Electron Device Letters. 23: 342-344. DOI: 10.1109/Led.2002.1004229 |
0.549 |
|
| 2002 |
Su P, Goto K, Sugii T, Hu C. Enhanced substrate current in SOI MOSFETs Ieee Electron Device Letters. 23: 282-284. DOI: 10.1109/55.998877 |
0.385 |
|
| 2002 |
Polishchuk I, Ranade P, King TJ, Hu C. Dual work function metal gate CMOS transistors by Ni-Ti interdiffusion Ieee Electron Device Letters. 23: 200-202. DOI: 10.1109/55.992838 |
0.617 |
|
| 2002 |
She M, King T, Hu C, Zhu W, Luo Z, Han J, Ma T. JVD silicon nitride as tunnel dielectric in p-channel flash memory Ieee Electron Device Letters. 23: 91-93. DOI: 10.1109/55.981316 |
0.337 |
|
| 2002 |
Lin R, Lu Q, Ranade P, King T, Hu C. An adjustable work function technology using Mo gate for CMOS devices Ieee Electron Device Letters. 23: 49-51. DOI: 10.1109/55.974809 |
0.361 |
|
| 2002 |
Choi Y, King T, Hu C. Nanoscale CMOS spacer FinFET for the terabit era Ieee Electron Device Letters. 23: 25-27. DOI: 10.1109/55.974801 |
0.543 |
|
| 2002 |
Orshansky M, Milor L, Chen P, Keutzer K, Hu C. Impact of spatial intrachip gate length variability on the performance of high-speed digital circuits Ieee Transactions On Computer-Aided Design of Integrated Circuits and Systems. 21: 544-553. DOI: 10.1109/43.998626 |
0.74 |
|
| 2002 |
He J, Wang Y, Zhang X, Xi X, Chan M, Huang R, Hu C. A simple method for optimization of 6H-SiC punch-through junctions used in both unipolar and bipolar power devices Ieee Transactions On Electron Devices. 49: 933-937. DOI: 10.1109/16.998606 |
0.313 |
|
| 2002 |
Choi Y, King T, Hu C. A spacer patterning technology for nanoscale CMOS Ieee Transactions On Electron Devices. 49: 436-441. DOI: 10.1109/16.987114 |
0.547 |
|
| 2002 |
Yeo YC, Subramanian V, Kedzierski J, Xuan P, King TJ, Bokor J, Hu C. Design and fabrication of 50-nm thin-body p-MOSFETs with a SiGe heterostructure channel Ieee Transactions On Electron Devices. 49: 279-286. DOI: 10.1109/16.981218 |
0.541 |
|
| 2002 |
He J, Xi X, Chan MS, Hu C, Li Y, Xing Z, Huang R. Linearly graded doping drift region: A novel lateral voltage-sustaining layer used for improvement of RESURF LDMOS transistor performances Semiconductor Science and Technology. 17: 721-728. DOI: 10.1088/0268-1242/17/7/315 |
0.367 |
|
| 2002 |
Yeo YC, King TJ, Hu C. Metal-dielectric band alignment and its implications for metal gate complementary metal-oxide-semiconductor technology Journal of Applied Physics. 92: 7266-7271. DOI: 10.1063/1.1521517 |
0.544 |
|
| 2002 |
Yeo YC, King TJ, Hu C. Direct tunneling leakage current and scalability of alternative gate dielectrics Applied Physics Letters. 81: 2091-2093. DOI: 10.1063/1.1506941 |
0.569 |
|
| 2002 |
Choi YK, King TJ, Hu C. Spacer FinFET: nanoscale double-gate CMOS technology for the terabit era Solid-State Electronics. 46: 1595-1601. DOI: 10.1016/S0038-1101(02)00111-9 |
0.532 |
|
| 2002 |
He J, Zhang X, Wang Y, Xi X, Chan M, Hu C. RETRACTED: Normalized mutual integral difference operator: a novel experimental method for extracting threshold voltage of MOSFETs Microelectronics Journal. 33: 667-670. DOI: 10.1016/S0026-2692(02)00028-9 |
0.323 |
|
| 2001 |
Ranade P, Lin R, Lu Q, Yeo Y, Takeuchi H, King T, Hu C. Molybdenum Gate Electrode Technology For Deep Sub-Micron CMOS Generations Mrs Proceedings. 670. DOI: 10.1557/Proc-670-K5.2 |
0.539 |
|
| 2001 |
Ranade P, Takeuchi H, King T, Hu C. Work Function Engineering of Molybdenum Gate Electrodes by Nitrogen Implantation Electrochemical and Solid State Letters. 4. DOI: 10.1149/1.1402497 |
0.35 |
|
| 2001 |
Polishchuk I, Yeo YC, Lu Q, King TJ, Hu C. Hot-carrier reliability comparison for pmosfets with ultrathin silicon-nitride and silicon-oxide gate dielectrics Ieee Transactions On Device and Materials Reliability. 1: 158-162. DOI: 10.1109/7298.974831 |
0.694 |
|
| 2001 |
Polishchuk I, Lu Q, Yeo YC, King TJ, Hu C. Intrinsic reliability projections for a thin jvd silicon nitride gate dielectric in p-mosfet Ieee Transactions On Device and Materials Reliability. 1: 4-8. DOI: 10.1109/7298.946454 |
0.695 |
|
| 2001 |
Lindert N, Chang L, Choi YK, Anderson EH, Lee WC, King TJ, Bokor J, Hu C. Sub-60-nm quasi-planar FinFETs fabricated using a simplified process Ieee Electron Device Letters. 22: 487-489. DOI: 10.1109/55.954920 |
0.816 |
|
| 2001 |
Choi Y, Ha D, King T, Hu C. Nanoscale ultrathin body PMOSFETs with raised selective germanium source/drain Ieee Electron Device Letters. 22: 447-448. DOI: 10.1109/55.944335 |
0.552 |
|
| 2001 |
Polishchuk I, Ranade P, King TJ, Hu C. Dual work function metal gate CMOS technology using metal interdiffusion Ieee Electron Device Letters. 22: 444-446. DOI: 10.1109/55.944334 |
0.578 |
|
| 2001 |
Lu Q, Yeo YC, Yang KJ, Lin R, Polishchuk I, King TJ, Hu C, Song SC, Luan HF, Kwong DL, Guo X, Luo Z, Wang X, Tso-Ping M. Two silicon nitride technologies for post-SiO2 MOSFET gate dielectric Ieee Electron Device Letters. 22: 324-326. DOI: 10.1109/55.930679 |
0.714 |
|
| 2001 |
Yeo YC, Lu Q, Ranade P, Takeuchi H, Yang KJ, Polishchuk I, King TJ, Hu C, Song SC, Luan HF, Kwong DL. Dual-metal gate CMOS technology with ultrathin silicon nitride gate dielectric Ieee Electron Device Letters. 22: 227-229. DOI: 10.1109/55.919237 |
0.75 |
|
| 2001 |
Orshansky M, An J, Jiang C, Liu B, Riccobene C, Hu C. Efficient generation of pre-silicon MOS model parameters for early circuit design Ieee Journal of Solid-State Circuits. 36: 156-159. DOI: 10.1109/4.896243 |
0.752 |
|
| 2001 |
Lee W, Hu C. Modeling CMOS tunneling currents through ultrathin gate oxide due to conduction- and valence-band electron and hole tunneling Ieee Transactions On Electron Devices. 48: 1366-1373. DOI: 10.1109/16.930653 |
0.381 |
|
| 2001 |
Asano K, Choi Y, King T, Hu C. Patterning sub-30-nm MOSFET gate with i-line lithography Ieee Transactions On Electron Devices. 48: 1004-1006. DOI: 10.1109/16.918251 |
0.52 |
|
| 2001 |
Huang X, Lee W, Kuo C, Hisamoto D, Chang L, Kedzierski J, Anderson E, Takeuchi H, Choi Y, Asano K, Subramanian V, King T, Bokor J, Hu C. Sub-50 nm P-channel FinFET Ieee Transactions On Electron Devices. 48: 880-886. DOI: 10.1109/16.918235 |
0.674 |
|
| 2001 |
Jin W, Liu W, Fung SKH, Chan PCH, Hu C. SOI thermal impedance extraction methodology and its significance for circuit simulation Ieee Transactions On Electron Devices. 48: 730-736. DOI: 10.1109/16.915707 |
0.352 |
|
| 2001 |
King Y, King T, Hu C. Charge-trap memory device fabricated by oxidation of Si/sub 1-x/Ge/sub x/ Ieee Transactions On Electron Devices. 48: 696-700. DOI: 10.1109/16.915694 |
0.347 |
|
| 2001 |
Yeo Y, Lu Q, Hu C. MOSFET Gate Oxide Reliability: Anode Hole Injection Model and its Applications International Journal of High Speed Electronics and Systems. 11: 849-886. DOI: 10.1016/S0129-1564(01)00101-5 |
0.548 |
|
| 2000 |
Ranade P, Yeo Y, Lu Q, Takeuchi H, King T, Hu C. Molybdenum as a Gate Electrode for Deep Sub-Micron CMOS Technology Mrs Proceedings. 611. DOI: 10.1557/Proc-611-C3.2.1 |
0.553 |
|
| 2000 |
Yeo YC, Lu Q, Lee WC, King T, Hu C, Wang X, Guo X, Ma TP. Direct tunneling gate leakage current in transistors with ultrathin silicon nitride gate dielectric Ieee Electron Device Letters. 21: 540-542. DOI: 10.1109/55.877204 |
0.39 |
|
| 2000 |
Yeo YC, Subramanian V, Kedzierski J, Xuan P, King TJ, Bokor J, Hu C. Nanoscale ultra-thin-body silicon-on-insulator P-MOSFET with a SiGe/Si heterostructure channel Ieee Electron Device Letters. 21: 161-163. DOI: 10.1109/55.830968 |
0.336 |
|
| 2000 |
Tin SF, Osman AA, Mayaram K, Hu C. A Simple Subcircuit Extension of the BSIM3v3 Model for CMOS RF Design Ieee Journal of Solid-State Circuits. 35: 612-623. DOI: 10.1109/4.839921 |
0.332 |
|
| 2000 |
Hisamoto D, Lee W, Kedzierski J, Takeuchi H, Asano K, Kuo C, Anderson E, King T, Bokor J, Hu C. FinFET-a self-aligned double-gate MOSFET scalable to 20 nm Ieee Transactions On Electron Devices. 47: 2320-2325. DOI: 10.1109/16.887014 |
0.399 |
|
| 2000 |
Polishchuk I, Hu C. Polycrystalline silicon/metal stacked gate for threshold voltage control in metal–oxide–semiconductor field-effect transistors Applied Physics Letters. 76: 1938-1940. DOI: 10.1063/1.126218 |
0.611 |
|
| 2000 |
Kedzierski J, Xuan P, Subramanian V, Bokor J, King TJ, Hu C, Anderson E. 20 nm gate-length ultra-thin body p-MOSFET with silicide source/drain Superlattices and Microstructures. 28: 445-452. DOI: 10.1006/Spmi.2000.0947 |
0.411 |
|
| 2000 |
Chang L, Hu C. MOSFET scaling into the 10 nm regime Superlattices and Microstructures. 28: 351-355. DOI: 10.1006/Spmi.2000.0933 |
0.588 |
|
| 1999 |
Lee W, King Y, King T, Hu C. Observation of Reduced Poly‐Gate Depletion Effect for Poly ‐ Si0.8Ge0.2 ‐ Gated NMOS Devices Electrochemical and Solid State Letters. 1: 58-59. DOI: 10.1149/1.1390635 |
0.336 |
|
| 1999 |
Orshansky M, Chen JC, Hu C. Direct sampling methodology for statistical analysis of scaled CMOS technologies Ieee Transactions On Semiconductor Manufacturing. 12: 403-408. DOI: 10.1109/66.806117 |
0.734 |
|
| 1999 |
King Y, King T, Hu C. A long-refresh dynamic/quasi-nonvolatile memory device with 2-nm tunneling oxide Ieee Electron Device Letters. 20: 409-411. DOI: 10.1109/55.778160 |
0.343 |
|
| 1999 |
Lee W, King T, Hu C. Evidence of hole direct tunneling through ultrathin gate oxide using P/sup +/ poly-SiGe gate Ieee Electron Device Letters. 20: 268-270. DOI: 10.1109/55.767094 |
0.34 |
|
| 1999 |
Lee W, Watson B, King T, Hu C. Enhancement of PMOS device performance with poly-SiGe gate Ieee Electron Device Letters. 20: 232-234. DOI: 10.1109/55.761024 |
0.355 |
|
| 1999 |
Lee W, King T, Hu C. Observation of reduced boron penetration and gate depletion for poly-Si/sub 0.8/Ge/sub 0.2/ gated PMOS devices Ieee Electron Device Letters. 20: 9-11. DOI: 10.1109/55.737557 |
0.362 |
|
| 1999 |
Chen JF, Tao J, Fang P, Hu C. Performance and reliability comparison between asymmetric and symmetric LDD devices and logic gates Ieee Journal of Solid-State Circuits. 34: 367-371. DOI: 10.1109/4.748188 |
0.35 |
|
| 1999 |
Lindert N, Sugii T, Tang S, Hu C. Dynamic threshold pass-transistor logic for improved delay at lower power supply voltages Ieee Journal of Solid-State Circuits. 34: 85-89. DOI: 10.1109/4.736659 |
0.753 |
|
| 1999 |
Ishimaru K, Chen JF, Hu C. Channel width dependence of hot-carrier induced degradation in shallow trench isolated PMOSFETs Ieee Transactions On Electron Devices. 46: 1532-1536. DOI: 10.1109/16.772507 |
0.373 |
|
| 1999 |
Yang KJ, Hu C. MOS capacitance measurements for high-leakage thin dielectrics Ieee Transactions On Electron Devices. 46: 1500-1501. DOI: 10.1109/16.772500 |
0.358 |
|
| 1999 |
Liu W, Jin X, King Y, Hu C. An efficient and accurate compact model for thin-oxide-MOSFET intrinsic capacitance considering the finite charge layer thickness Ieee Transactions On Electron Devices. 46: 1070-1072. DOI: 10.1109/16.760418 |
0.542 |
|
| 1999 |
Yamamichi S, Yamamichi A, Park D, King T, Hu C. Impact of time dependent dielectric breakdown and stress-induced leakage current on the reliability of high dielectric constant (Ba,Sr)TiO/sub 3/ thin-film capacitors for Gbit-scale DRAMs Ieee Transactions On Electron Devices. 46: 342-347. DOI: 10.1109/16.740900 |
0.302 |
|
| 1999 |
Hu C. Silicon nanoelectronics for the 21st century Nanotechnology. 10: 113-116. DOI: 10.1088/0957-4484/10/2/301 |
0.349 |
|
| 1999 |
Chang L, Kuo C, Hu C, Kalnitsky A, Bergemont A, Francis P. Non-volatile memory device with true CMOS compatibility Electronics Letters. 35: 1443-1445. DOI: 10.1049/El:19990983 |
0.341 |
|
| 1999 |
Mayaram K, Hu C, Pederson DO. Oscillations during inductive turn-off in rectifiers Solid-State Electronics. 43: 677-681. DOI: 10.1016/S0038-1101(98)00269-X |
0.336 |
|
| 1999 |
Park D, Hu C. The prospect of process-induced charging damage in future thin gate oxides Microelectronics Reliability. 39: 567-577. DOI: 10.1016/S0026-2714(99)00032-3 |
0.355 |
|
| 1998 |
Liu W, Hu C. Bsim3V3 Mosfet Model International Journal of High Speed Electronics and Systems. 9: 671-701. DOI: 10.1142/S0129156498000294 |
0.334 |
|
| 1998 |
Nie H, Anselm K, Lenox C, Yuan P, Hu C, Kinsey G, Streetman B, Campbell J. Resonant-cavity separate absorption, charge and multiplication avalanche photodiodes with high-speed and high gain-bandwidth product Ieee Photonics Technology Letters. 10: 409-411. DOI: 10.1109/68.661426 |
0.318 |
|
| 1998 |
Chen JC, Sylvester D, Hu C. An on-chip, interconnect capacitance characterization method with sub-femto-farad resolution Ieee Transactions On Semiconductor Manufacturing. 11: 204-210. DOI: 10.1109/66.670160 |
0.343 |
|
| 1998 |
Park D, King Y, Lu Q, King T, Hu C, Kalnitsky A, Tay S, Cheng C. Transistor characteristics with Ta/sub 2/O/sub 5/ gate dielectric Ieee Electron Device Letters. 19: 441-443. DOI: 10.1109/55.728906 |
0.355 |
|
| 1998 |
Lu Q, Park D, Kalnitsky A, Chang C, Cheng C, Tay SP, King T, Hu C. Leakage current comparison between ultra-thin Ta 2 O 5 films and conventional gate dielectrics Ieee Electron Device Letters. 19: 341-342. DOI: 10.1109/55.709635 |
0.32 |
|
| 1998 |
Chen JF, Ishimaru K, Hu C. Enhanced hot-carrier induced degradation in shallow trench isolated narrow channel PMOSFET's Ieee Electron Device Letters. 19: 332-334. DOI: 10.1109/55.709632 |
0.328 |
|
| 1998 |
Sinitsky D, Tang S, Jangity A, Assaderaghi F, Shahidi G, Hu C. Simulation of SOI devices and circuits using BSIM3SOI Ieee Electron Device Letters. 19: 323-325. DOI: 10.1109/55.709628 |
0.367 |
|
| 1998 |
Lee W, King Y, King T, Hu C. Investigation of poly-Si/sub 1-x/Ge/sub x/ for dual-gate CMOS technology Ieee Electron Device Letters. 19: 247-249. DOI: 10.1109/55.701432 |
0.305 |
|
| 1998 |
Chen JF, Tao J, Fang P, Hu C. 0.35-μm asymmetric and symmetric LDD device comparison using a reliability/speed/power methodology Ieee Electron Device Letters. 19: 216-218. DOI: 10.1109/55.701421 |
0.33 |
|
| 1998 |
Park D, Hu C. Plasma charging damage on ultrathin gate oxides Ieee Electron Device Letters. 19: 1-3. DOI: 10.1109/55.650333 |
0.338 |
|
| 1998 |
Cheng Y, Chen K, Imai K, Hu C. A unified MOSFET channel charge model for device modeling in circuit simulation Ieee Transactions On Computer-Aided Design of Integrated Circuits and Systems. 17: 641-644. DOI: 10.1109/43.712096 |
0.394 |
|
| 1998 |
Chen K, Hu C. Performance and V/sub dd/ scaling in deep submicrometer CMOS Ieee Journal of Solid-State Circuits. 33: 1586-1589. DOI: 10.1109/4.720410 |
0.368 |
|
| 1998 |
Anselm K, Nie H, Hu C, Lenox C, Yuan P, Kinsey G, Campbell J, Streetman B. Performance of thin separate absorption, charge, and multiplication avalanche photodiodes Ieee Journal of Quantum Electronics. 34: 482-490. DOI: 10.1109/3.661456 |
0.312 |
|
| 1998 |
Yu B, Ju D, Lee W, Kepler N, King T, Hu C. Gate engineering for deep-submicron CMOS transistors Ieee Transactions On Electron Devices. 45: 1253-1262. DOI: 10.1109/16.678529 |
0.365 |
|
| 1998 |
Chan M, Hui KY, Hu C, Ko PK. A robust and physical BSIM3 non-quasi-static transient and AC small-signal model for circuit simulation Ieee Transactions On Electron Devices. 45: 834-841. DOI: 10.1109/16.662788 |
0.33 |
|
| 1998 |
Noda K, Tatsumi T, Uchida T, Nakajima K, Miyamoto H, Hu C. A 0.1-/spl mu/m delta-doped MOSFET fabricated with post-low-energy implanting selective epitaxy Ieee Transactions On Electron Devices. 45: 809-814. DOI: 10.1109/16.662780 |
0.352 |
|
| 1998 |
King YC, Fujioka H, Kamohara S, Chen K, Hu C. Dc electrical oxide thickness model for quantization of the inversion layer in MOSFETs Semiconductor Science and Technology. 13: 963-966. DOI: 10.1088/0268-1242/13/8/001 |
0.372 |
|
| 1998 |
Chen K, Hu C, Fang P, Gupta A, Lin MR, Wollesen DL. Experimental studies on deep submicron CMOS scaling Semiconductor Science and Technology. 13: 816-820. DOI: 10.1088/0268-1242/13/7/027 |
0.392 |
|
| 1998 |
Chen K, Hu C, Fang P, Lin MR, Wollesen DL. Two experimental methods to characterize load capacitance of a CMOS gate Semiconductor Science and Technology. 13: 773-775. DOI: 10.1088/0268-1242/13/7/019 |
0.385 |
|
| 1998 |
King YC, Hu C, Fujioka H, Kamohara S. Small signal electron charge centroid model for quantization of inversion layer in a metal-on-insulator field-effect transistor Applied Physics Letters. 72: 3476-3478. DOI: 10.1063/1.121671 |
0.368 |
|
| 1998 |
Yu B, Imai K, Hu C. Characterization of Global Inversion Layer in Thin-Gate-Oxide Deep-Submicron p-MOSFETs Solid-State Electronics. 42: 401-404. DOI: 10.1016/S0038-1101(97)00204-9 |
0.357 |
|
| 1998 |
Hu C. Reliability phenomena under AC stress Microelectronics Reliability. 38: 1-5. DOI: 10.1016/S0026-2714(97)00163-7 |
0.303 |
|
| 1998 |
Fujioka H, Oshima M, Hu C, Sumiya M, Matsuki N, Miyazaki K, Koinuma H. Characteristics of field effect a-Si:H solar cells Journal of Non-Crystalline Solids. 227: 1287-1290. DOI: 10.1016/S0022-3093(98)00353-6 |
0.336 |
|
| 1997 |
Mu SC, Lin CH, Lin MI, Hu CC. Pseudomonas aeruginosa endophthalmitis in prematurity: report of two cases. Zhonghua Minguo Xiao Er Ke Yi Xue Hui Za Zhi [Journal]. Zhonghua Minguo Xiao Er Ke Yi Xue Hui. 38: 159-61. PMID 9151472 |
0.485 |
|
| 1997 |
Yu B, Ju DH, Kepler N, King TJ, Hu C. Impact of gate microstructure on complementary metal-oxide-semiconductor transistor performance Japanese Journal of Applied Physics. 36. DOI: 10.1143/Jjap.36.L1150 |
0.396 |
|
| 1997 |
Gupta A, Fang P, Song M, Lin M, Wollesen D, Chen K, Hu C. Accurate determination of ultrathin gate oxide thickness and effective polysilicon doping of CMOS devices Ieee Electron Device Letters. 18: 580-582. DOI: 10.1109/55.644077 |
0.406 |
|
| 1997 |
Banerjee K, Amerasekera A, Cheung N, Hu C. High-current failure model for VLSI interconnects under short-pulse stress conditions Ieee Electron Device Letters. 18: 405-407. DOI: 10.1109/55.622511 |
0.32 |
|
| 1997 |
Yu B, Ju D, Kepler N, Hu C. Impact of nitrogen (N/sub 14/) implantation into polysilicon gate on high-performance dual-gate CMOS transistors Ieee Electron Device Letters. 18: 312-314. DOI: 10.1109/55.596922 |
0.327 |
|
| 1997 |
Chen K, Hu C, Fang P, Gupta A. Experimental confirmation of an accurate CMOS gate delay model for gate oxide and voltage scaling Ieee Electron Device Letters. 18: 275-277. DOI: 10.1109/55.585355 |
0.397 |
|
| 1997 |
McGaughy BW, Chen JC, Sylvester D, Hu C. A simple method for on-chip, sub-femto Farad interconnect capacitance measurement Ieee Electron Device Letters. 18: 21-23. DOI: 10.1109/55.553064 |
0.303 |
|
| 1997 |
Sinitsky D, Tu R, Liang C, Chan M, Bokor J, Hu C. AC output conductance of SOI MOSFETs and impact on analog applications Ieee Electron Device Letters. 18: 36-38. DOI: 10.1109/55.553036 |
0.32 |
|
| 1997 |
Chen K, Hu C, Fang P, Lin MR, Wollesen DL. Predicting CMOS speed with gate oxide and voltage scaling and interconnect loading effects Ieee Transactions On Electron Devices. 44: 1951-1957. DOI: 10.1109/16.641365 |
0.372 |
|
| 1997 |
Chen K, Hu C, Fang P, Lin MR, Wollesen DL. Optimizing quarter and sub-quarter micron CMOS circuit speed considering interconnect loading effects Ieee Transactions On Electron Devices. 44: 1556-1558. DOI: 10.1109/16.622616 |
0.319 |
|
| 1997 |
Tu R, King JC, Shin H, Hu C. Simulating process-induced gate oxide damage in circuits Ieee Transactions On Electron Devices. 44: 1393-1400. DOI: 10.1109/16.622593 |
0.357 |
|
| 1997 |
Assaderaghi F, Sinitsky D, Bokor J, Ko PK, Gaw H, Hu C. High-field transport of inversion-layer electrons and holes including velocity overshoot Ieee Transactions On Electron Devices. 44: 664-671. DOI: 10.1109/16.563373 |
0.319 |
|
| 1997 |
Yu B, Wann CHJ, Nowak ED, Noda K, Hu C. Short-channel effect improved by lateral channel-engineering in deep-submicronmeter MOSFET's Ieee Transactions On Electron Devices. 44: 627-634. DOI: 10.1109/16.563368 |
0.316 |
|
| 1997 |
Cheng Y, Jeng M, Liu Z, Huang J, Chan M, Chen K, Ko PK, Hu C. A physical and scalable I-V model in BSIM3v3 for analog/digital circuit simulation Ieee Transactions On Electron Devices. 44: 277-287. DOI: 10.1109/16.557715 |
0.397 |
|
| 1997 |
Yu B, Imai K, Hu C. Electrical characterization of inversion layer carrier profile in deep-submicron p-MOSFETs Semiconductor Science and Technology. 12: 1355-1357. DOI: 10.1088/0268-1242/12/11/005 |
0.346 |
|
| 1997 |
Cheng Y, Imai K, Jeng MC, Liu Z, Chen K, Hu C. Modelling temperature effects of quarter micrometre MOSFETs in BSIM3v3 for circuit simulation Semiconductor Science and Technology. 12: 1349-1354. DOI: 10.1088/0268-1242/12/11/004 |
0.348 |
|
| 1997 |
Cheng Y, Sugii T, Chen K, Hu C. Modeling of small size MOSFETs with reverse short channel and narrow width effects for circuit simulation Solid-State Electronics. 41: 1227-1231. DOI: 10.1016/S0038-1101(97)00126-3 |
0.374 |
|
| 1997 |
Sinitsky D, Assaderaghi F, Orshansky M, Bokor J, Hu C. Velocity overshoot of electrons and holes in Si inversion layers Solid-State Electronics. 41: 1119-1125. DOI: 10.1016/S0038-1101(97)00031-2 |
0.718 |
|
| 1996 |
Koinuma H, Fujioka H, Hu C, Koida T, Kawasaki M. Structure and Numerical Simulation of Field Effect Solar Cell Mrs Proceedings. 426: 95-100. DOI: 10.1557/Proc-426-95 |
0.316 |
|
| 1996 |
Nguyen KB, Cardinale GF, Tichenor DA, Kubiak GD, Berger K, Ray-Chaudhuri AK, Perras Y, Haney SJ, Nissen R, Krenz K, Stulen RH, Fujioka H, Hu C, Bokor J, Tennant DM, et al. Fabrication of metal–oxide–semiconductor devices with extreme ultraviolet lithography Journal of Vacuum Science & Technology B. 14: 4188-4192. DOI: 10.1116/1.588618 |
0.349 |
|
| 1996 |
Park D, Hu C, Zheng S, Bui N. A full-process damage detection method using small MOSFET and protection diode Ieee Electron Device Letters. 17: 563-565. DOI: 10.1109/55.545771 |
0.336 |
|
| 1996 |
Lindert N, Yoshida M, Wann C, Hu C. Comparison of GIDL in p+-poly PMOS and n+-poly PMOS Devices Ieee Electron Device Letters. 17: 285-287. DOI: 10.1109/55.496459 |
0.744 |
|
| 1996 |
Chen K, Wann HC, Ko PK, Hu C. The impact of device scaling and power supply change on CMOS gate performance Ieee Electron Device Letters. 17: 202-204. DOI: 10.1109/55.491829 |
0.333 |
|
| 1996 |
Chen K, Wann HC, Duster J, Pramanik D, Nariani S, Ko PK, Hu C. An accurate semi-empirical saturation drain current model for LDD n-MOSFET Ieee Electron Device Letters. 17: 145-147. DOI: 10.1109/55.485195 |
0.343 |
|
| 1996 |
King Y, Yu B, Pohlman J, Hu C. Punchthrough diode as the transient voltage suppressor for low-voltage electronics Ieee Transactions On Electron Devices. 43: 2037-2040. DOI: 10.1109/16.543049 |
0.378 |
|
| 1996 |
Wann CH, Noda K, Tanaka T, Yoshida M, Hu C. A comparative study of advanced MOSFET concepts Ieee Transactions On Electron Devices. 43: 1742-1753. DOI: 10.1109/16.536820 |
0.382 |
|
| 1996 |
Rosenbaum E, King JC, Hu C. Accelerated testing of SiO/sub 2/ reliability Ieee Transactions On Electron Devices. 43: 70-80. DOI: 10.1109/16.477595 |
0.54 |
|
| 1996 |
Shin HC, Hu C. Thin gate oxide damage due to plasma processing Semiconductor Science and Technology. 11: 463-473. DOI: 10.1088/0268-1242/11/4/002 |
0.334 |
|
| 1996 |
Cheng Y, Jeng MC, Liu Z, Chen K, Yu B, Imai K, Hu C. Quarter-micrometre surface and buried channel PMOSFET modelling for circuit simulation Semiconductor Science and Technology. 11: 1763-1769. DOI: 10.1088/0268-1242/11/12/001 |
0.341 |
|
| 1996 |
Yu B, Ma Z, Zhang G, Hu C. Hot-carrier-induced degradation in ultra-thin-film fully-depleted SOI MOSFETs Solid-State Electronics. 39: 1791-1794. DOI: 10.1016/S0038-1101(96)00095-0 |
0.348 |
|
| 1996 |
Chen K, Wann HC, Dunster J, Ko PK, Hu C, Yoshida M. MOSFET carrier mobility model based on gate oxide thickness, threshold and gate voltages Solid-State Electronics. 39: 1515-1518. DOI: 10.1016/0038-1101(96)00059-7 |
0.371 |
|
| 1996 |
Chen K, Cheng Y, Hu C, Liu ZH, Jeng M, Ping KK. Modeling of a MOSFET's parasitic resistance's narrow width and body bias effects for an IC simulator Solid-State Electronics. 39: 1405-1408. DOI: 10.1016/0038-1101(96)00019-6 |
0.305 |
|
| 1996 |
Chen K, Huang JH, Ma JZ, Liu ZH, Jeng MC, Ko PK, Hu C. Temperature effects on MOSFET driving capability and voltage gain Solid-State Electronics. 39: 699-701. DOI: 10.1016/0038-1101(95)00197-2 |
0.338 |
|
| 1995 |
Fujioka H, Wann C, Park D, Hu C. Characterization of Mos Structures with Ultra-Thin Tunneling Oxynitride Mrs Proceedings. 405: 333. DOI: 10.1557/Proc-405-333 |
0.337 |
|
| 1995 |
Rosenbaum E, Kuusinen SB, Ko PK, Minami ER, Hu C. Circuit-Level Simulation of TDDB Failure in Digital CMOS Circuits Ieee Transactions On Semiconductor Manufacturing. 8: 370-374. DOI: 10.1109/66.401018 |
0.539 |
|
| 1995 |
Wann HC, Hu C. High-endurance ultra-thin tunnel oxide in MONOS device structure for dynamic memory application Ieee Electron Device Letters. 16: 491-493. DOI: 10.1109/55.468277 |
0.331 |
|
| 1995 |
Choi W, Assaderaghi F, Park Y, Min H, Hu C, Dutton RW. Simulation of deep submicron SOI N-MOSFET considering the velocity overshoot effect Ieee Electron Device Letters. 16: 333-335. DOI: 10.1109/55.388725 |
0.302 |
|
| 1995 |
King Y, Yu B, Pohlman J, Hu C. Punchthrough transient voltage suppressor for low-voltage electronics Ieee Electron Device Letters. 16: 303-305. DOI: 10.1109/55.388715 |
0.345 |
|
| 1995 |
Chan M, King JC, Ko PK, Hu C. SOI/bulk hybrid technology on SIMOX wafers for high performance circuits with good ESD immunity Ieee Electron Device Letters. 16: 11-13. DOI: 10.1109/55.363215 |
0.37 |
|
| 1995 |
Chan M, Yu B, Ma Z, Nguyen CT, Hu C, Ko PK. Comparative study of fully depleted and body-grounded non fully depleted SOI MOSFETs for high performance analog and mixed signal circuits Ieee Transactions On Electron Devices. 42: 1975-1981. DOI: 10.1109/16.469406 |
0.373 |
|
| 1995 |
Chan M, Yuen SS, Ma Z, Hui KY, Ko PK, Hu C. ESD reliability and protection schemes in SOI CMOS output buffers Ieee Transactions On Electron Devices. 42: 1816-1821. DOI: 10.1109/16.464414 |
0.364 |
|
| 1994 |
Hu C. SOI (Silicon-on-insulator) for high speed ultra large scale integration Japanese Journal of Applied Physics. 33: 365-369. DOI: 10.1143/Jjap.33.365 |
0.374 |
|
| 1994 |
Hu C. Ultra‐large‐scale integration device scaling and reliability Journal of Vacuum Science & Technology B. 12: 3237-3241. DOI: 10.1116/1.587505 |
0.367 |
|
| 1994 |
Assaderaghi F, Parke S, Sinitsky D, Bokor J, Ko PK, Hu C. A Dynamic Threshold Voltage MOSFET (DTMOS) for Very Low Voltage Operation Ieee Electron Device Letters. 15: 510-512. DOI: 10.1109/55.338420 |
0.358 |
|
| 1994 |
King JC, Hu C. Effect of Low and High Temperature Anneal on Process-Induced Damage of Gate Oxide Ieee Electron Device Letters. 15: 475-476. DOI: 10.1109/55.334672 |
0.31 |
|
| 1994 |
Chan M, Assaderaghi F, Hu C, Ko PK, Parke SA. Recessed-Channel Structure for Fabricating Ultrathin SOI MOSFET with Low Series Resistance Ieee Electron Device Letters. 15: 22-24. DOI: 10.1109/55.289474 |
0.347 |
|
| 1994 |
Ma ZJ, Wann HJ, Chan M, King JC, Cheng YC, Ko PK, Hu C. Hot-carrier effects in thin-film fully depleted SOI MOSFET's Ieee Electron Device Letters. 15: 218-220. DOI: 10.1109/55.286697 |
0.349 |
|
| 1994 |
Ma ZJ, Chen JC, Liu ZH, Krick JT, Cheng YC, Hu C, Ko PK. Suppression of boron penetration in p/sup +/ polysilicon gate P-MOSFETs using low-temperature gate-oxide N/sub 2/O anneal Ieee Electron Device Letters. 15: 109-111. DOI: 10.1109/55.285386 |
0.341 |
|
| 1994 |
Ma Z, Liu ZH, Krick JT, Huang HJ, Cheng YC, Hu C, Ko PK. Optimization of gate oxide N/sub 2/O anneal for CMOSFET's at room and cryogenic temperatures Ieee Transactions On Electron Devices. 41: 1364-1372. DOI: 10.1109/16.297731 |
0.334 |
|
| 1994 |
Schuegraf KF, Hu C. Effects of temperature and defects on breakdown lifetime of thin SiO/sub 2/ at very low voltages Ieee Transactions On Electron Devices. 41: 1227-1232. DOI: 10.1109/16.293352 |
0.349 |
|
| 1994 |
Lee PM, Garfinkel T, Ko PK, Hu C. Simulating the competing effects of P- and N-MOSFET hot-carrier aging in CMOS circuits Ieee Transactions On Electron Devices. 41: 852-853. DOI: 10.1109/16.285044 |
0.305 |
|
| 1994 |
Schuegraf KF, Hu C. Hole injection SiO/sub 2/ breakdown model for very low voltage lifetime extrapolation Ieee Transactions On Electron Devices. 41: 761-767. DOI: 10.1109/16.285029 |
0.349 |
|
| 1994 |
Quader KN, Ko PK, Fang P, Hu C, Yue JT. Hot-Carrier-Reliability Design Rules for Translating Device Degradation to CMOS Digital Circuit Degradation Ieee Transactions On Electron Devices. 41: 681-691. DOI: 10.1109/16.285017 |
0.362 |
|
| 1994 |
Schuegraf KF, Hu C. Metal‐oxide‐semiconductor field‐effect‐transistor substrate current during Fowler–Nordheim tunneling stress and silicon dioxide reliability Journal of Applied Physics. 76: 3695-3700. DOI: 10.1063/1.357438 |
0.338 |
|
| 1994 |
Tu R, Huang JH, Ko P, Hu C. MOSFET saturation voltage Solid-State Electronics. 37: 1445-1446. DOI: 10.1016/0038-1101(94)90204-6 |
0.333 |
|
| 1993 |
Shin H, Hu C. Monitoring plasma-process induced damage in thin oxide Ieee Transactions On Semiconductor Manufacturing. 6: 96-102. DOI: 10.1109/66.216927 |
0.321 |
|
| 1993 |
Shin H, Noguchi K, Hu C. Modeling oxide thickness dependence of charging damage by plasma processing Ieee Electron Device Letters. 14: 509-511. DOI: 10.1109/55.257998 |
0.322 |
|
| 1993 |
Assaderaghi F, Parke S, King J, Ko PK, Hu C, Chen J. High-Performance Sub-Quarter-Micrometer PMOSFET’s on SOI Ieee Electron Device Letters. 14: 298-300. DOI: 10.1109/55.215204 |
0.379 |
|
| 1993 |
Parke SA, Hu C, Ko PK. Bipolar-FET hybrid-mode operation of quarter-micrometer SOI MOSFETs (MESFETs read MOSFETs) Ieee Electron Device Letters. 14: 234-236. DOI: 10.1109/55.215178 |
0.341 |
|
| 1993 |
Moazzami R, Hu C. A high-quality stacked thermal/LPCVD gate oxide technology for ULSI Ieee Electron Device Letters. 14: 72-73. DOI: 10.1109/55.215112 |
0.324 |
|
| 1993 |
Parke SA, Hu C, Ko PK. A High-Performance Lateral Bipolar Transistor Fabricated on SIMOX Ieee Electron Device Letters. 14: 33-35. DOI: 10.1109/55.215091 |
0.368 |
|
| 1993 |
Tu RH, Rosenbaum E, Chan WY, Li CC, Minami E, Quader K, Keung Ko P, Hu C. Berkeley Reliability Tools-BERT Ieee Transactions On Computer-Aided Design of Integrated Circuits and Systems. 12: 1524-1534. DOI: 10.1109/43.256927 |
0.542 |
|
| 1993 |
Rosenbaum E, Liu Z, Hu C. Silicon dioxide breakdown lifetime enhancement under bipolar bias conditions Ieee Transactions On Electron Devices. 40: 2287-2295. DOI: 10.1109/16.249477 |
0.527 |
|
| 1993 |
Quader KN, Li CC, Tu R, Rosenbaum E, Ko PK, Hu C. A Bidirectional NMOSFET Current Reduction Model for Simulation of Hot-Carrier-Induced Circuit Degradation Ieee Transactions On Electron Devices. 40: 2245-2254. DOI: 10.1109/16.249472 |
0.556 |
|
| 1993 |
Liu Z-, Hu C, Huang J-, Chan T-, Jeng M-, Ko PK, Cheng YC. Threshold voltage model for deep-submicrometer MOSFETs Ieee Transactions On Electron Devices. 40: 86-95. DOI: 10.1109/16.249429 |
0.378 |
|
| 1992 |
Liew B-, Fang P, Cheung NW, Hu C. Circuit reliability simulator for interconnect, via, and contact electromigration Ieee Transactions On Electron Devices. 39: 2472-2479. DOI: 10.1109/16.163460 |
0.317 |
|
| 1992 |
Chen J, Solomon R, Chan T-, Ko PK, Hu C. Threshold voltage and C-V characteristics of SOI MOSFET's related to Si film thickness variation on SIMOX wafers Ieee Transactions On Electron Devices. 39: 2346-2353. DOI: 10.1109/16.158807 |
0.376 |
|
| 1992 |
Parke SA, Wann HC, Ko PK, Hu C, Moon JE. Design for Suppression of Gate-Induced Drain Leakage in LDD MOSFET’s Using a Quasi-Two-Dimensional Analytical Model Ieee Transactions On Electron Devices. 39: 1694-1703. DOI: 10.1109/16.141236 |
0.406 |
|
| 1992 |
Fong Y, Liang GC, Duzer TV, Hu C. Channel width effect on MOSFET breakdown Ieee Transactions On Electron Devices. 39: 1265-1267. DOI: 10.1109/16.129124 |
0.362 |
|
| 1992 |
Hu C. Simulating hot-carrier effects on circuit performance Semiconductor Science and Technology. 7. DOI: 10.1088/0268-1242/7/3B/146 |
0.377 |
|
| 1991 |
Rosenbaum E, Hu C. High-Frequency Time-Dependent Breakdown of SiO<inf>2</inf> Ieee Electron Device Letters. 12: 267-269. DOI: 10.1109/55.82056 |
0.502 |
|
| 1991 |
Rofan R, Hu C. Stress-induced oxide leakage Ieee Electron Device Letters. 12: 632-634. DOI: 10.1109/55.119221 |
0.328 |
|
| 1991 |
Assaderaghi F, Chen J, Solomon R, Chian T-, Ko PK, Hu C. Transient behavior of subthreshold characteristics of fully depleted SOI MOSFETs Ieee Electron Device Letters. 12: 518-520. DOI: 10.1109/55.119175 |
0.362 |
|
| 1991 |
Chen J, Solomon R, Chan T-, Ko P-, Hu C. A CV technique for measuring thin SOI film thickness Ieee Electron Device Letters. 12: 453-455. DOI: 10.1109/55.119163 |
0.336 |
|
| 1991 |
Chung JE, Ko P-, Hu C. A model for hot-electron-induced MOSFET linear-current degradation based on mobility reduction due to interface-state generation Ieee Transactions On Electron Devices. 38: 1362-1370. DOI: 10.1109/16.81627 |
0.352 |
|
| 1991 |
George P, Ko PK, Hu C. The influence of substrate compensation on inter-electrode leakage and back-gating in GaAs MESFETs Solid-State Electronics. 34: 233-252. DOI: 10.1016/0038-1101(91)90180-7 |
0.405 |
|
| 1991 |
Zappe HP, Hu C. A p-v-n diode model for CMOS latchup Solid-State Electronics. 34: 1275-1279. DOI: 10.1016/0038-1101(91)90068-A |
0.363 |
|
| 1991 |
Hegarty CJ, Lee JC, Hu C. Enhanced conductivity and breakdown of oxides grown on heavily implanted substrates Solid-State Electronics. 34: 1207-1213. DOI: 10.1016/0038-1101(91)90059-8 |
0.301 |
|
| 1991 |
Ravanelli EMA, Hu C. Device-circuit mixed simulation of VDMOS charge transients Solid-State Electronics. 34: 1353-1360. DOI: 10.1016/0038-1101(91)90029-X |
0.354 |
|
| 1990 |
George P, Hui K, Ko PK, Hu C. The reduction of backgating in GaAs MESFETs by impact ionization Ieee Electron Device Letters. 11: 434-436. DOI: 10.1109/55.62987 |
0.356 |
|
| 1990 |
Moon JE, Garfinkel T, Chung J, Wong M, Ko PK, Hu C. A new LDD structure: total overlap with polysilicon spacer (TOPS) Ieee Electron Device Letters. 11: 221-223. DOI: 10.1109/55.55256 |
0.371 |
|
| 1990 |
Fong Y, Hu C. High-current snapback characteristics of MOSFETs Ieee Transactions On Electron Devices. 37: 2101-2103. DOI: 10.1109/16.57176 |
0.389 |
|
| 1990 |
Chung JE, Jeng M-, Moon JE, Ko P-, Hu C. Low-voltage hot-electron currents and degradation in deep-submicrometer MOSFETs Ieee Transactions On Electron Devices. 37: 1651-1657. DOI: 10.1109/16.55752 |
0.38 |
|
| 1990 |
Fong Y, Wu AT-, Hu C. Oxides grown on textured single-crystal silicon-dependence on process and application of EEPROMs Ieee Transactions On Electron Devices. 37: 583-590. DOI: 10.1109/16.47761 |
0.32 |
|
| 1990 |
Hung KK, Ko PK, Hu C, Cheng YC. A physics-based MOSFET noise model for circuit simulators Ieee Transactions On Electron Devices. 37: 1323-1333. DOI: 10.1109/16.108195 |
0.327 |
|
| 1990 |
George P, Ko PK, Hu C. Model for photo-induced long-term drain current transients in GaAs MESFETs International Journal of Electronics. 68: 721-728. DOI: 10.1080/00207219008921214 |
0.345 |
|
| 1990 |
Zappe HP, Aronowitz S, Hu C. Oxide implantation for threshold voltage control Solid State Electronics. 33: 1447-1453. DOI: 10.1016/0038-1101(90)90119-Y |
0.359 |
|
| 1989 |
Chen J, Chan T-, Ko PK, Hu C. Gate current in OFF-state MOSFET Ieee Electron Device Letters. 10: 203-205. DOI: 10.1109/55.31721 |
0.393 |
|
| 1989 |
Palkuti LJ, Ormond RD, Hu C, Chung J. Correlation between channel hot-electron degradation and radiation-induced interface trapping in MOS devices Ieee Transactions On Nuclear Science. 36: 2140-2146. DOI: 10.1109/23.45416 |
0.304 |
|
| 1989 |
Moazzami R, Lee JC, Hu C. Temperature acceleration of time-dependent dielectric breakdown Ieee Transactions On Electron Devices. 36: 2462-2465. DOI: 10.1109/16.43668 |
0.301 |
|
| 1989 |
George P, Ko P, Hu C. GaAs MESFET model for circuit simulation International Journal of Electronics. 66: 379-397. DOI: 10.1080/00207218908925396 |
0.363 |
|
| 1989 |
Choi JY, Ko PK, Hu C, Scott WF. Hot-carrier-induced degradation of metal-oxide-semiconductor field-effect transistors: Oxide charge versus interface traps Journal of Applied Physics. 65: 354-360. DOI: 10.1063/1.342548 |
0.35 |
|
| 1989 |
George P, Ko P, Hu C. Modeling the substrate depletion region for GaAs FETs fabricated on semi-insulating substrates Solid-State Electronics. 32: 165-168. DOI: 10.1016/0038-1101(89)90184-6 |
0.348 |
|
| 1989 |
Ong TC, Ko PK, Hu C. Hot-carrier effects in depletion-mode MOSFETs Solid State Electronics. 32: 33-36. DOI: 10.1016/0038-1101(89)90045-2 |
0.356 |
|
| 1988 |
Lee J, Hegarty C, Hu C. Electrical characteristics of MOSFETs using low-pressure chemical-vapor-deposited oxide Ieee Electron Device Letters. 9: 324-327. DOI: 10.1109/55.732 |
0.31 |
|
| 1988 |
Tien B, Hu C. Determination of carrier lifetime from rectifier ramp recovery waveform Ieee Electron Device Letters. 9: 553-555. DOI: 10.1109/55.17842 |
0.303 |
|
| 1988 |
Lee JC, Hu C. Polarity asymmetry of oxides grown on polycrystalline silicon Ieee Transactions On Electron Devices. 35: 1063-1070. DOI: 10.1109/16.3365 |
0.323 |
|
| 1988 |
Zappe HP, Hu C. Characteristics of CMOS devices in high-energy boron-implanted substrates Ieee Transactions On Electron Devices. 35: 1029-1034. DOI: 10.1109/16.3361 |
0.324 |
|
| 1988 |
Kuo MM, Seki K, Lee PM, Choi JY, Ko PK, Hu C. Simulation of MOSFET lifetime under AC hot-electron stress Ieee Transactions On Electron Devices. 35: 1004-1011. DOI: 10.1109/16.3358 |
0.357 |
|
| 1988 |
Ong TC, Levi M, Ko PK, Hu C. Recovery of Threshold Voltage After Hot-Carrier Stressing Ieee Transactions On Electron Devices. 35: 978-984. DOI: 10.1109/16.3354 |
0.352 |
|
| 1988 |
Brassington MP, Razouk RR, Hu C. Localized interface trap generation in SILO-isolated MOSFETs during PECVD nitride passivation Ieee Transactions On Electron Devices. 35: 96-100. DOI: 10.1109/16.2421 |
0.335 |
|
| 1987 |
Gupta RK, Sakai I, Hu C. Effects of substrate resistance on CMOS latchup holding voltages Ieee Transactions On Electron Devices. 34: 2309-2316. DOI: 10.1109/T-Ed.1987.23237 |
0.354 |
|
| 1987 |
Mayaram K, Lee JC, Hu C. A model for the electric field in lightly doped drain structures Ieee Transactions On Electron Devices. 34: 1509-1518. DOI: 10.1109/T-Ed.1987.23113 |
0.356 |
|
| 1987 |
Zappe HP, Gupta RK, Sakai I, Hu C. Operation of CMOS devices with a floating well Ieee Transactions On Electron Devices. 34: 335-343. DOI: 10.1109/T-Ed.1987.22927 |
0.374 |
|
| 1987 |
Holland S, Chen IC, Hu C. Ultra-thin silicon-dioxide breakdown characteristics of MOS devices with n + and p + polysilicon gates Ieee Electron Device Letters. 8: 572-575. DOI: 10.1109/Edl.1987.26732 |
0.427 |
|
| 1987 |
Ong TC, Ko PK, Hu C. Modeling of Substrate Current in p-MOSFET's Ieee Electron Device Letters. 8: 413-416. DOI: 10.1109/Edl.1987.26678 |
0.337 |
|
| 1987 |
Choi JY, Ko PK, Hu C. Hot-carrier-induced MOSFET degradation under AC stress Ieee Electron Device Letters. 8: 333-335. DOI: 10.1109/Edl.1987.26650 |
0.345 |
|
| 1987 |
Chan TY, Wu AT, Ko PK, Hu C. Effects of the gate-to-drain/source overlap on MOSFET characteristics Ieee Electron Device Letters. 8: 326-328. DOI: 10.1109/Edl.1987.26647 |
0.367 |
|
| 1987 |
Tsai HH, Wu LC, Wu CY, Hu C. The Effects of Thermal Nitridation Conditions on the Reliability of Thin Nitrided Oxide Films Ieee Electron Device Letters. 8: 143-145. DOI: 10.1109/Edl.1987.26581 |
0.315 |
|
| 1987 |
Chan TY, Young KK, Hu C. A true single-transistor oxide-nitride-oxide EEPROM device Ieee Electron Device Letters. 8: 93-95. DOI: 10.1109/Edl.1987.26563 |
0.397 |
|
| 1987 |
Choi JY, Ko PK, Hu C. Effect of oxide field on hot‐carrier‐induced degradation of metal‐oxide‐semiconductor field‐effect transistors Applied Physics Letters. 50: 1188-1190. DOI: 10.1063/1.97906 |
0.351 |
|
| 1987 |
Young KK, Hu C, Oldham WG. Charge transport and trapping model for scaled nitride-oxide stacked films Applied Surface Science. 30: 171-179. DOI: 10.1016/0169-4332(87)90090-0 |
0.312 |
|
| 1987 |
Zappe HP, Hu C. Device characteristics of mosfets in MeV implanted substrates Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms. 21: 163-167. DOI: 10.1016/0168-583X(87)90818-4 |
0.314 |
|
| 1986 |
Liang M, Choi JY, Ko P, Hu C. Inversion-layer capacitance and mobility of very thin gate-Oxide MOSFET's Ieee Transactions On Electron Devices. 33: 409-413. DOI: 10.1109/T-Ed.1986.22502 |
0.341 |
|
| 1986 |
Wu AT, Chan TY, Ko PK, Hu C. A source-side injection erasable programmable read-only-memory (SI-EPROM) device Ieee Electron Device Letters. 7: 540-542. DOI: 10.1109/Edl.1986.26465 |
0.385 |
|
| 1986 |
Kuo D, Hu C. Optimization of epitaxial layers for power bipolar-MOS transistor Ieee Electron Device Letters. 7: 510-512. DOI: 10.1109/Edl.1986.26455 |
0.344 |
|
| 1986 |
Feng W, Chan TY, Hu C. MOSFET drain breakdown voltage Ieee Electron Device Letters. 7: 449-450. DOI: 10.1109/Edl.1986.26432 |
0.387 |
|
| 1986 |
Lee J, Mayaram K, Hu C. A theoretical study of gate/Drain offset in LDD MOSFET's Ieee Electron Device Letters. 7: 152-154. DOI: 10.1109/Edl.1986.26328 |
0.355 |
|
| 1986 |
Chan TY, Wu AT, Ko PK, Hu C, Razouk RR. Asymmetrical characteristics in LDD and minimum-overlap MOSFET's Ieee Electron Device Letters. 7: 16-19. DOI: 10.1109/Edl.1986.26277 |
0.386 |
|
| 1986 |
Chen IC, Holland S, Young KK, Chang C, Hu C. Substrate hole current and oxide breakdown Applied Physics Letters. 49: 669-671. DOI: 10.1063/1.97563 |
0.336 |
|
| 1986 |
Gupta RK, Sakai I, Hu C. Analysis of latch-up holding voltage for shallow trench CMOS Electronics Letters. 22: 1261-1263. DOI: 10.1049/El:19860864 |
0.372 |
|
| 1986 |
Kuo DS, Hu C, Sapp SP. An analytical model for the power bipolar-MOS transistor Solid-State Electronics. 29: 1229-1237. DOI: 10.1016/0038-1101(86)90128-0 |
0.392 |
|
| 1985 |
Chen I, Holland SE, Hu C. Electrical breakdown in thin gate and tunneling oxides Ieee Transactions On Electron Devices. 32: 413-422. DOI: 10.1109/T-Ed.1985.21957 |
0.316 |
|
| 1985 |
Hu C, Tam SC, Hsu F, Ko P, Chan T, Terrill KW. Hot-electron-induced MOSFET degradation—Model, monitor, and improvement Ieee Transactions On Electron Devices. 32: 375-385. DOI: 10.1109/T-Ed.1985.21952 |
0.373 |
|
| 1985 |
Chen I, Holland SE, Hu C. Electrical Breakdown in Thin Gate and Tunneling Oxides Ieee Journal of Solid-State Circuits. 20: 333-342. DOI: 10.1109/Jssc.1985.1052311 |
0.32 |
|
| 1985 |
Chan TY, Ko PK, Hu C. Dependence of channel electric field on device scaling Ieee Electron Device Letters. 6: 551-553. DOI: 10.1109/Edl.1985.26226 |
0.333 |
|
| 1985 |
Chang C, Hu C, Brodersen RW. Quantum yield of electron impact ionization in silicon Journal of Applied Physics. 57: 302-309. DOI: 10.1063/1.334804 |
0.301 |
|
| 1984 |
Sheu B, Scharfetter D, Hu C, Pederson D. A compact IGFET charge model Ieee Transactions On Circuits and Systems. 31: 745-748. DOI: 10.1109/Tcs.1984.1085562 |
0.312 |
|
| 1984 |
Tam S, Hu C. Hot-Electron-Induced Photon and Photocarrier Generation in Silicon MOSFET's Ieee Transactions On Electron Devices. 31: 1264-1273. DOI: 10.1109/T-Ed.1984.21698 |
0.311 |
|
| 1984 |
Liang MS, Chang C, Yeow YT, Hu C, Brodersen RW. MOSFET Degradation Due to Stressing of Thin Oxide Ieee Transactions On Electron Devices. 31: 1238-1244. DOI: 10.1109/T-Ed.1984.21694 |
0.316 |
|
| 1984 |
Ko PK, Hu C, Tam S. Lucky-Electron Model of Channel Hot-Electron Injection in MOSFET's Ieee Transactions On Electron Devices. 31: 1116-1125. DOI: 10.1109/T-Ed.1984.21674 |
0.313 |
|
| 1984 |
Sheu BJ, Hu C. Switch-induced error voltage on a switched capacitor Ieee Journal of Solid-State Circuits. 19: 519-525. DOI: 10.1109/Jssc.1984.1052176 |
0.313 |
|
| 1984 |
Chan TY, Ko PK, Hu C. A simple method to characterize substrate current in MOSFET's Ieee Electron Device Letters. 5: 505-507. DOI: 10.1109/Edl.1984.26006 |
0.331 |
|
| 1984 |
Terrill KW, Hu C, Ko PK. An analytical model for the channel electric field in MOSFET's with graded-drain structures Ieee Electron Device Letters. 5: 440-442. DOI: 10.1109/Edl.1984.25980 |
0.311 |
|
| 1984 |
Sheu BJ, Hu C, Ko PK, Hsu F-. Source-and-drain series resistance of LDD MOSFET's Ieee Electron Device Letters. 5: 365-367. DOI: 10.1109/Edl.1984.25948 |
0.351 |
|
| 1984 |
Holland S, Chen IC, Ma TP, Hu C. On physical models for gate oxide breakdown Ieee Electron Device Letters. 5: 302-305. DOI: 10.1109/Edl.1984.25925 |
0.332 |
|
| 1984 |
Terrill KW, Byrne PF, Hu C, Cheung NW. Complementary metal‐oxide‐silicon field‐effect transistors fabricated in 4‐MeV boron‐implanted silicon Applied Physics Letters. 45: 977-979. DOI: 10.1063/1.95470 |
0.347 |
|
| 1983 |
Hsu F, Muller RS, Hu C, Ko P. A simple punchthrough model for short-channel MOSFET's Ieee Transactions On Electron Devices. 30: 1354-1359. DOI: 10.1109/T-Ed.1983.21298 |
0.376 |
|
| 1983 |
Hsu F, Muller RS, Hu C. A simplified model of short-channel MOSFET characteristics in the breakdown mode Ieee Transactions On Electron Devices. 30: 571-576. DOI: 10.1109/T-Ed.1983.21170 |
0.355 |
|
| 1983 |
Liang MS, Chang C, Yeow YT, Hu C, Brodersen RW. Creation and Termination of Substrate Deep Depletion in Thin Oxide MOS Capacitors by Charge Tunneling Ieee Electron Device Letters. 4: 350-352. DOI: 10.1109/Edl.1983.25759 |
0.336 |
|
| 1983 |
Tam S, Hsu F, Hu C, Muller RS, Ko PK. Hot-electron currents in very short channel MOSFET's Ieee Electron Device Letters. 4: 249-251. DOI: 10.1109/Edl.1983.25721 |
0.377 |
|
| 1982 |
Tam S, Ko P, Hu C, Muller RS. Correlation between substrate and gate currents in MOSFET's Ieee Transactions On Electron Devices. 29: 1740-1744. DOI: 10.1109/T-Ed.1982.21019 |
0.34 |
|
| 1982 |
Hsu F, Ko P, Tam S, Hu C, Muller RS. An analytical breakdown model for short-channel MOSFET's Ieee Transactions On Electron Devices. 29: 1735-1740. DOI: 10.1109/T-Ed.1982.21018 |
0.346 |
|
| 1982 |
Hu C, Chi MH. Second Breakdown of Vertical Power MOSFET's Ieee Transactions On Electron Devices. 29: 1287-1293. DOI: 10.1109/T-Ed.1982.20869 |
0.365 |
|
| 1982 |
Tam S, Hsu FC, Ko PK, Hu C, Muller RS. Hot-electron induced excess carriers in MOSFET's Ieee Electron Device Letters. 3: 376-378. DOI: 10.1109/Edl.1982.25605 |
0.308 |
|
| 1979 |
Hu C. Optimum Doping Profile for Minimum Ohmic Resistance and High-Breakdown Voltage Ieee Transactions On Electron Devices. 26: 243-244. DOI: 10.1109/T-Ed.1979.19416 |
0.315 |
|
| 1979 |
Hu C, Shum Y, Klein T, Lucero E. Current‐field characteristics of oxides grown from polycrystalline silicon Applied Physics Letters. 35: 189-191. DOI: 10.1063/1.91032 |
0.325 |
|
| 1977 |
Whinnery JR, Hu C, Kwon YS. Liquid-Crystal Waveguides for Integrated Optics Ieee Journal of Quantum Electronics. 13: 262-267. DOI: 10.1109/Jqe.1977.1069307 |
0.604 |
|
| 1974 |
Hu C, Whinnery JR. Losses of a nematic liquid-crystal optical waveguide* Journal of the Optical Society of America. 64: 1424-1432. DOI: 10.1364/Josa.64.001424 |
0.588 |
|
| 1974 |
Hu C, Whinnery J, Amer N. Optical deflection in thin-film nematic-liquid-crystal waveguides Ieee Journal of Quantum Electronics. 10: 218-222. DOI: 10.1109/Jqe.1974.1145796 |
0.595 |
|
| 1974 |
Hu C, Whinnery J. Field-realigned nematic-liquid-crystal optical waveguides Ieee Journal of Quantum Electronics. 10: 556-562. DOI: 10.1109/Jqe.1974.1068192 |
0.598 |
|
| 1973 |
Hu C, Whinnery JR. New thermooptical measurement method and a comparison with other methods. Applied Optics. 12: 72-9. PMID 20125231 DOI: 10.1364/Ao.12.000072 |
0.59 |
|
| 1973 |
Hu C, Whinnery J, Amer N. Liquid crystals in integrated optics Ieee Journal of Quantum Electronics. 9: 684-685. DOI: 10.1109/Jqe.1973.1077538 |
0.569 |
|
| 1972 |
Chang MS, Burlamacchi P, Hu C, Whinnery JR. Light Amplification in a Thin Film Applied Physics Letters. 20: 313-314. DOI: 10.1063/1.1654163 |
0.575 |
|
| 1971 |
Hu C, Muller RS. A resistive-gated IGFET tetrode Ieee Transactions On Electron Devices. 18: 418-425. DOI: 10.1109/T-Ed.1971.17218 |
0.37 |
|
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