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Trevor J. Thornton - Publications

Affiliations: 
Arizona State University, Tempe, AZ, United States 
Area:
Electronics and Electrical Engineering, Materials Science Engineering, Biochemistry
Website:
https://www.asu.edu/aine/trevor.htm
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74 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2016 Pepper M, Thornton TJ, Wharam DA. Early work on semiconductor quantum nanoelectronics in the Cavendish Laboratory. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 28: 421003. PMID 27557363 DOI: 10.1088/0953-8984/28/42/421003  0.402
2016 Thornton TJ, Lepkowski W, Wilk SJ. Impact Ionization in SOI MESFETs at the 32-nm Node Ieee Transactions On Electron Devices. 63: 4143-4146. DOI: 10.1109/Ted.2016.2601241  0.739
2015 Lepkowski W, Wilk SJ, Thornton TJ. Complementary SOI MESFETs at the 45-nm CMOS Node Ieee Electron Device Letters. 36: 14-16. DOI: 10.1109/Led.2014.2373148  0.727
2014 Lepkowski W, Wilk SJ, Parsi A, Saraniti M, Ferry D, Thornton TJ. Avalanche breakdown in SOI MESFETs Solid-State Electronics. 91: 78-80. DOI: 10.1016/J.Sse.2013.10.003  0.743
2013 Ghajar MR, Wilk SJ, Lepkowski W, Bakkaloglu B, Thornton TJ. Backgate modulation technique for higher efficiency envelope tracking Ieee Transactions On Microwave Theory and Techniques. 61: 1599-1607. DOI: 10.1109/Tmtt.2013.2247616  0.69
2013 Thornton TJ, Lepkowski W, Wilk SJ, Goryll M, Chen B, Kam J, Bakkaloglu B, Holbert K. Radiation tolerant MESFET-CMOS low dropout linear regulator for integrated power management at the 45nm node Ieee Radiation Effects Data Workshop. DOI: 10.1109/REDW.2013.6658204  0.702
2013 Wilk SJ, Lepkowski W, Chen B, Kam J, Goryll M, Holbert K, Thornton TJ. Radiation effects of high voltage MESFETs at the 45nm node Ieee Radiation Effects Data Workshop. DOI: 10.1109/REDW.2013.6658202  0.718
2013 Wilk SJ, Lepkowski W, Thornton TJ. 32 dBm Power Amplifier on 45 nm SOI CMOS Ieee Microwave and Wireless Components Letters. 23: 161-163. DOI: 10.1109/Lmwc.2013.2245413  0.721
2013 Lepkowski W, Wilk SJ, Kam J, Thornton TJ. 40V MESFETs fabricated on 32nm SOI CMOS Proceedings of the Custom Integrated Circuits Conference. DOI: 10.1109/CICC.2013.6658399  0.72
2012 LEPKOWSKI W, WILK SJ, GHAJAR MR, PARSI A, THORNTON TJ. SILICON-ON-INSULATOR MESFETS AT THE 45NM NODE International Journal of High Speed Electronics and Systems. 21: 1250012. DOI: 10.1142/S0129156412500127  0.74
2012 Lepkowski W, Wilk SJ, Ghajar MR, Bakkaloglu B, Thornton TJ. An integrated MESFET voltage follower LDO for high power and PSR RF and analog applications Proceedings of the Custom Integrated Circuits Conference. DOI: 10.1109/CICC.2012.6330634  0.712
2011 Kim S, Lepkowski W, Wilk SJ, Thornton TJ, Bakkaloglu B. A Low-power CMOS BFSK Transceiver for Health Monitoring Systems. Ieee Biomedical Circuits and Systems Conference : Healthcare Technology : [Proceedings]. Ieee Biomedical Circuits and Systems Conference. 157-160. PMID 24473462 DOI: 10.1109/BioCAS.2011.6107751  0.69
2010 Wilk SJ, Balijepalli A, Ervin J, Lepkowski W, Thornton TJ. Silicon on Insulator MESFETs for RF Amplifiers. Solid-State Electronics. 54: 336-342. PMID 20657816 DOI: 10.1016/J.Sse.2009.10.016  0.723
2009 Jung JY, Joshi P, Petrossian L, Thornton TJ, Posner JD. Electromigration current rectification in a cylindrical nanopore due to asymmetric concentration polarization. Analytical Chemistry. 81: 3128-33. PMID 19298060 DOI: 10.1021/Ac900318J  0.576
2009 Kim S, Lepkowski W, Thornton TJ, Bakkaloglu B. CMOS compatible high voltage compliant MESFET based analog IC building blocks Midwest Symposium On Circuits and Systems. 122-125. DOI: 10.1109/MWSCAS.2009.5236136  0.339
2009 Kim S, Lepkowski W, Thornton TJ, Bakkaloglu B. CMOS compatible high-voltage compliant MESFET-based analogue IC building blocks Electronics Letters. 45: 624-626. DOI: 10.1049/El.2009.1130  0.443
2008 Takulapalli BR, Laws GM, Liddell PA, Andréasson J, Erno Z, Gust D, Thornton TJ. Electrical detection of amine ligation to a metalloporphyrin via a hybrid SOI-MOSFET. Journal of the American Chemical Society. 130: 2226-33. PMID 18225896 DOI: 10.1021/Ja076328A  0.768
2008 Petrossian L, Wilk SJ, Joshi P, Goryll M, Posner JD, Goodnick SM, Thornton TJ. Ion Conductance of Cylindrical Solid State Nanopores Used in Coulter Counting Experiments Mrs Proceedings. 1092. DOI: 10.1557/Proc-1092-Bb02-09  0.768
2008 Petrossian L, Wilk SJ, Joshi P, Goodnick SM, Thornton TJ. Demonstration of Coulter counting through a cylindrical solid state nanopore Journal of Physics: Conference Series. 109: 012028. DOI: 10.1088/1742-6596/109/1/012028  0.702
2007 Wilk SJ, Petrossian L, Goryll M, Thornton TJ, Goodnick SM, Tang JM, Eisenberg RS. Integrated electrodes on a silicon based ion channel measurement platform. Biosensors & Bioelectronics. 23: 183-90. PMID 17507211 DOI: 10.1016/J.Bios.2007.03.030  0.735
2007 Petrossian L, Wilk SJ, Joshi P, Hihath S, Posner JD, Goodnick SM, Thornton TJ. High aspect ratio cylindrical nanopores in silicon-on-insulator substrates Solid-State Electronics. 51: 1391-1397. DOI: 10.1016/J.Sse.2007.06.014  0.762
2005 Wilk SJ, Petrossian L, Goryll M, Thornton TJ, Goodnick SM, Tang JM, Eisenberg RS, Saraniti M, Wong D, Schmidt JJ, Montemagno CD. Ion channels on silicon E-Journal of Surface Science and Nanotechnology. 3. DOI: 10.1380/Ejssnt.2005.184  0.719
2005 Khan T, Vasileska D, Thornton TJ. Effect of interface roughness on silicon-on-insulator-metal-semiconductor field-effect transistor mobility and the device low-power high-frequency operation Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 23: 1782-1784. DOI: 10.1116/1.1949220  0.425
2004 Khan T, Vasileska D, Thornton TJ. Treatment of interface roughness in SOI-MESFETs Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 22: 2110-2112. DOI: 10.1116/1.1768194  0.404
2004 Yang J, Spann J, Anderson R, Thornton T. High-frequency performance of subthreshold SOI MESFETs Ieee Electron Device Letters. 25: 652-654. DOI: 10.1109/Led.2004.834245  0.393
2004 Wilk SJ, Goryll M, Laws GM, Goodnick SM, Thornton TJ, Saraniti M, Tang J, Eisenberg RS. Teflon ™-coated silicon apertures for supported lipid bilayer membranes Applied Physics Letters. 85: 3307-3309. DOI: 10.1063/1.1805712  0.717
2004 Beysserie S, Aboud S, Goodnick S, Thornton T, Saraniti M. Full-band particle-based simulation of SOI and GOI MOSFETs Physica Status Solidi (B) Basic Research. 241: 2297-2302. DOI: 10.1002/Pssb.200404940  0.364
2004 Ashcroft B, Takulapalli B, Yang J, Laws GM, Zhang HQ, Tao NJ, Lindsay S, Gust D, Thornton TJ. Calibration of a pH sensitive buried channel silicon-on-insulator MOSFET for sensor applications Physica Status Solidi (B). 241: 2291-2296. DOI: 10.1002/Pssb.200404936  0.763
2003 Chakraborty PS, McCartney MR, Li J, Gopalan C, Singisetti U, Goodnick SM, Thornton TJ, Kozicki MN. Electron holographic characterization of nanoscale charge distributions for ultra shallow PN junctions in Si Physica E: Low-Dimensional Systems and Nanostructures. 19: 167-172. DOI: 10.1016/S1386-9477(03)00302-3  0.373
2003 Laws GM, Thornton TJ, Yang J, De la Garza L, Kozicki M, Gust D, Gu J, Sorid D. Drain current control in a hybrid molecular/MOSFET device Physica E: Low-Dimensional Systems and Nanostructures. 17: 659-663. DOI: 10.1016/S1386-9477(02)00923-2  0.373
2003 Goryll M, Wilk S, Laws GM, Thornton T, Goodnick S, Saraniti M, Tang J, Eisenberg RS. Silicon-based ion channel sensor Superlattices and Microstructures. 34: 451-457. DOI: 10.1016/J.Spmi.2004.03.041  0.716
2003 Tarik K, Vasileska D, Thornton TJ. Quantum mechanical tunneling phenomena in metal-semiconductor junctions Superlattices and Microstructures. 34: 335-339. DOI: 10.1016/J.Spmi.2004.03.022  0.358
2003 Singisetti U, McCartney MR, Li J, Chakraborty PS, Goodnick SM, Kozicki MN, Thornton TJ. Two-dimensional electrical characterization of ultrashallow source/drain extensions for nanoscale MOSFETs Superlattices and Microstructures. 34: 301-310. DOI: 10.1016/J.Spmi.2004.03.020  0.335
2002 Yang J, De La Garza L, Thornton TJ, Kozicki M, Gust D. Controlling the threshold voltage of a metal-oxide-semiconductor field effect transistor by molecular protonation of the Si:SiO2 interface Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 20: 1706-1709. DOI: 10.1116/1.1491543  0.398
2002 Barker JM, Akis R, Ferry DK, Goodnick SM, Thornton TJ, Koleske DD, Wickenden AE, Henry RL. High-field transport studies of GaN Physica B: Condensed Matter. 314: 39-41. DOI: 10.1016/S0921-4526(01)01453-3  0.334
2002 Barker JM, Akis R, Thornton TJ, Ferry DK, Goodnick SM. High field transport studies of GaN Physica Status Solidi (a) Applied Research. 190: 263-270. DOI: 10.1002/1521-396X(200203)190:1<263::Aid-Pssa263>3.0.Co;2-U  0.314
2002 Laws GM, Thornton T, Yang J, Garza LDL, Kozicki M, Gust D. Molecular control of the drain current in a buried channel MOSFET Physica Status Solidi B-Basic Solid State Physics. 233: 83-89. DOI: 10.1002/1521-3951(200209)233:1<83::Aid-Pssb83>3.0.Co;2-#  0.373
2001 Kanjanachuchai S, Thornton T, Fernández JM, Ahmed H. Coulomb blockade in strained-Si nanowires on leaky virtual substrates Semiconductor Science and Technology. 16: 72-76. DOI: 10.1088/0268-1242/16/2/303  0.39
2001 Rack MJ, Thornton T, Ferry DK, Roberts J, Westhoff RC, Robinson M. Cryogenic field effect transistors using strained silicon quantum wells in Si:SiGe heterostructures grown by APCVD Materials Science and Engineering B-Advanced Functional Solid-State Materials. 87: 277-281. DOI: 10.1016/S0921-5107(01)00725-5  0.434
2001 Rack MJ, Thornton T, Ferry DK, Huffman J, Westhoff R. Strained Si/SiGe quantum well MODFETs for cryogenic circuit applications Solid-State Electronics. 45: 1199-1203. DOI: 10.1016/S0038-1101(01)00198-8  0.398
2000 Rack MJ, Thornton T, Ferry DK, Roberts J, Westhoff R. Characterization of strained silicon quantum wells and Si1-xGex heterostructures using Auger electron spectroscopy and spreading resistance profiles of bevelled structures Semiconductor Science and Technology. 15: 291-296. DOI: 10.1088/0268-1242/15/3/312  0.384
2000 Rahman F, Thornton T. Superconducting quantum wells for the detection of submillimeter wave electromagnetic radiation Applied Physics Letters. 77: 432-434. DOI: 10.1063/1.127000  0.307
2000 Khoury M, Gunther A, Miličić S, Rack J, Goodnick S, Vasileska D, Thornton T, Ferry D. Single-electron quantum dots in silicon MOS structures Applied Physics a: Materials Science & Processing. 71: 415-421. DOI: 10.1007/S003390000554  0.337
2000 Rack MJ, Thornton T, Ferry DK. Quantum wires in strained silicon quantum wells on tilted substrates Superlattices and Microstructures. 28: 369-376. DOI: 10.1006/Spmi.2000.0936  0.34
2000 Gunther A, Khoury M, Miličić S, Vasileska D, Thornton T, Goodnick S. Transport in split-gate silicon quantum dots Superlattices and Microstructures. 27: 373-376. DOI: 10.1006/Spmi.2000.0844  0.37
1999 Shin DH, Becker CE, Harris JJ, Fernández JM, Woods NJ, Thornton T, Maude DK, Portal JC. Variable-range hopping transport in modulation-doped n-channel Si/Si1-xGex quantum well structures Semiconductor Science and Technology. 14: 762-767. DOI: 10.1088/0268-1242/14/9/304  0.322
1999 Rahman F, Thornton TJ. Coupling of superconductivity with low-dimensional electron systems in mesoscopic geometries Superlattices and Microstructures. 25: 767-774. DOI: 10.1006/Spmi.1999.0737  0.352
1998 Yeoh JC, Green PW, Thornton TJ, Kaya S, Fobelets K, Fernández JM. MOS gated Si:SiGe quantum wells formed by anodic oxidation Semiconductor Science and Technology. 13: 1442-1445. DOI: 10.1088/0268-1242/13/12/020  0.583
1998 Kanjanachuchai S, Thornton T, Fernández JM, Ahmed H. Leakage currents in virtual substrates: measurements and device implications Semiconductor Science and Technology. 13: 1215-1218. DOI: 10.1088/0268-1242/13/10/026  0.352
1998 Shin DH, Becker CE, Harris JJ, Fernández JM, Woods NJ, Thornton T, Maude DK, Portal JC. Analysis of quantum lifetime behaviour in modulation-doped n-channel structures Semiconductor Science and Technology. 13: 1106-1110. DOI: 10.1088/0268-1242/13/10/009  0.305
1998 Fobelets K, Jeamsaksiri W, Hampson J, Toumazou C, Thornton T. Si:SiGe MODFET current mirror Electronics Letters. 34: 2076-2077. DOI: 10.1049/El:19981494  0.305
1998 Thornton T. Ballistic transport in GaAs quantum wires - A short history Superlattices and Microstructures. 23: 601-610. DOI: 10.1006/Spmi.1997.0528  0.321
1997 Thornton T, Fernández JM, Kaya S, Green PW, Fobelets K. Si:SiGe quantum wells grown on (118) substrates: Surface morphology and transport properties Applied Physics Letters. 70: 1278-1280. DOI: 10.1063/1.118526  0.577
1997 Kaya S, Thornton T, Green PW, Fobelets K, Fernández JM. Evidence for Inter‐Miniband Scattering Due to Electron Heating in Si:SiGe Quantum Wells Grown on Tilted Substrates Physica Status Solidi B-Basic Solid State Physics. 204: 227-229. DOI: 10.1002/1521-3951(199711)204:1<227::Aid-Pssb227>3.0.Co;2-Z  0.528
1996 Rahman F, Thornton TJ, Huber R, Cohen LF, Yuen WT, Stradling RA. Superconductor-semiconductor interaction effects in mesoscopic hybrid structures. Physical Review. B, Condensed Matter. 54: 14026-14031. PMID 9985322 DOI: 10.1103/Physrevb.54.14026  0.325
1996 Thornton T, Matsumura A, Fernández J. Negative magnetoresistance and electron-electron interaction in Si:SiGe quantum wells Surface Science. 547-549. DOI: 10.1016/0039-6028(96)00466-9  0.339
1995 Matsumura A, Thornton T, Fernández J, Holmes S, Zhang J, Joyce B. Electron heating effect on transport properties in modulation doped structures grown by gas source molecular beam epitaxy Journal of Crystal Growth. 157: 373-377. DOI: 10.1016/0022-0248(95)00357-6  0.36
1992 Cumming DRS, Ahmed H, Thornton T. Anomalous magnetoresistance at a mesoscopic bend Applied Physics Letters. 60: 2755-2757. DOI: 10.1063/1.106867  0.327
1992 Feng Y, Thornton TJ, Green M, Harris JJ. Quantum wire FETs in δ-doped GaAs Superlattices and Microstructures. 11: 281-284. DOI: 10.1016/0749-6036(92)90381-E  0.448
1992 Yamada M, Hirakawa K, Odagiri T, Thornton TJ, Ikoma T. Electron scatterers near the boundary in AlGaAs/GaAs quantum wires fabricated by focused ion beam implantation Superlattices and Microstructures. 11: 261-264. DOI: 10.1016/0749-6036(92)90376-G  0.337
1990 Wharam D, Newbury R, Pepper M, Hasko D, Ahmed H, Frost J, Ritchie D, Peacock D, Jones G, Thornton T, Ekenberg U. Ballistic electron transport in quasi-one-dimensional systems Surface Science. 229: 233-238. DOI: 10.1016/0039-6028(90)90878-C  0.426
1989 Thornton TJ, Roukes ML, Scherer A, Van de Gaag BP. Boundary scattering in quantum wires. Physical Review Letters. 63: 2128-2131. PMID 10040769 DOI: 10.1103/Physrevlett.63.2128  0.515
1989 Peacock DC, Ritchie DA, Frost JEF, Linfield EH, Davies AG, Smith C, Wharam DA, Ford CJB, Thornton T, Newbury R, Hasko DG, Ahmed H, Jones GAC, Pepper M. The Growth and Physics of MBE Structures Physica Scripta. 1989: 141-146. DOI: 10.1088/0031-8949/1989/T29/026  0.491
1989 Ford CJB, Thornton TJ, Newbury R, Pepper M, Ahmed H, Peacock DC, Ritchie DA, Frost JEF, Jones GAC. Electrostatically defined heterojunction rings and the Aharonov–Bohm effect Applied Physics Letters. 54: 21-23. DOI: 10.1063/1.100818  0.387
1988 Ford CJ, Thornton TJ, Newbury R, Pepper M, Ahmed H, Peacock DC, Ritchie DA, Frost JE, Jones GA. Vanishing Hall voltage in a quasi-one-dimensional GaAs-AlxGa1-xAs heterojunction. Physical Review. B, Condensed Matter. 38: 8518-8521. PMID 9945624 DOI: 10.1103/Physrevb.38.8518  0.438
1988 van Houten H, Beenakker CW, van Loosdrecht PH, Thornton TJ, Ahmed H, Pepper M, Foxon CT, Harris JJ. Four-terminal magnetoresistance of a two-dimensional electron-gas constriction in the ballistic regime. Physical Review. B, Condensed Matter. 37: 8534-8536. PMID 9944213 DOI: 10.1103/Physrevb.37.8534  0.391
1988 Wharam DA, Thornton TJ, Newbury R, Pepper M, Ahmed H, Frost JEF, Hasko DG, Peacock DC, Ritchie DA, Jones GAC. One-dimensional transport and the quantisation of the ballistic resistance Journal of Physics C: Solid State Physics. 21: L209-L214. DOI: 10.1088/0022-3719/21/8/002  0.422
1988 Ford CJB, Thornton TJ, Newbury R, Pepper M, Ahmed H, Foxon CT, Harris JJ, Roberts C. Journal of Physics C: Solid State Physics. 21: L325-L331. DOI: 10.1088/0022-3719/21/10/005  0.443
1988 Ford CJB, Thornton T, Newbury R, Pepper M, Ahmed H, Davies GJ, Andrews D. Transport in GaAs heterojunction ring structures Superlattices and Microstructures. 4: 541-544. DOI: 10.1016/0749-6036(88)90233-9  0.512
1987 Thornton TJ, Pepper M, Ahmed H, Davies GJ, Andrews D. Universal conductance fluctuations and electron coherence lengths in a narrow two-dimensional electron gas. Physical Review. B, Condensed Matter. 36: 4514-4517. PMID 9943451 DOI: 10.1103/Physrevb.36.4514  0.331
1987 Newson DJ, Pepper M, Thornton T. Quantum interference and dimensionality in semiconductor structures Philosophical Magazine Part B. 56: 775-784. DOI: 10.1080/13642818708215311  0.446
1986 Berggren K, Thornton TJ, Newson DJ, Pepper M. Magnetic depopulation of 1D subbands in a narrow 2D electron gas in a GaAs:AlGaAs heterojunction. Physical Review Letters. 57: 1769-1772. PMID 10033540 DOI: 10.1103/Physrevlett.57.1769  0.307
1986 Thornton TJ, Pepper M, Ahmed H, Andrews D, Davies GJ. One-dimensional conduction in the two-dimensional electron gas in a GaAs-AlGaAs heterojunction. Physical Review Letters. 56: 1198-1201. PMID 10032595 DOI: 10.1103/Physrevlett.56.1198  0.344
1986 Thornton T, Pepper M, Ahmed H, Andrews D, Davies GJ. Electron transport across depleted region of a fine-gate GaAs:AlGaAs heterojunction FET Electronics Letters. 22: 247-249. DOI: 10.1049/El:19860170  0.5
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