| Year |
Citation |
Score |
| 2022 |
Chang CC, Li ST, Pan TL, Tsai CM, Wang IT, Chang TS, Hou TH. Device quantization policy in variation-aware in-memory computing design. Scientific Reports. 12: 112. PMID 34997104 DOI: 10.1038/s41598-021-04159-x |
0.373 |
|
| 2021 |
Liu CJ, Wan Y, Li LJ, Lin CP, Hou TH, Huang ZY, Hu VP. Two-Dimensional Materials-Based Static Random-Access Memory. Advanced Materials (Deerfield Beach, Fla.). e2107894. PMID 34932857 DOI: 10.1002/adma.202107894 |
0.366 |
|
| 2021 |
Liu B, Zhao Y, Verma D, Wang LA, Liang H, Zhu H, Li LJ, Hou TH, Lai CS. BiOSe-Based Memristor-Aided Logic. Acs Applied Materials & Interfaces. PMID 33723989 DOI: 10.1021/acsami.1c00177 |
0.317 |
|
| 2020 |
Lan YW, Hong CJ, Chen PC, Lin YY, Yang CH, Chu CJ, Li MY, Li LJ, Su CJ, Wu BW, Hou TH, Li KS, Zhong YL. Nonvolatile molecular memory with the multilevel states based on MoS2 nanochannel field effect transistor through tuning gate voltage to control molecular configurations. Nanotechnology. PMID 32208372 DOI: 10.1088/1361-6528/ab82d7 |
0.486 |
|
| 2020 |
Kingra SK, Parmar V, Chang CC, Hudec B, Hou TH, Suri M. SLIM: Simultaneous Logic-in-Memory Computing Exploiting Bilayer Analog OxRAM Devices. Scientific Reports. 10: 2567. PMID 32054872 DOI: 10.1038/S41598-020-59121-0 |
0.47 |
|
| 2020 |
Majumdar S, Chen Y, Hudec B, Hou T, Suri M. Semi-Empirical $RC$ Circuit Model for Non-Filamentary Bi-Layer OxRAM Devices Ieee Transactions On Electron Devices. 67: 1348-1352. DOI: 10.1109/Ted.2020.2964113 |
0.364 |
|
| 2020 |
Liu B, Tai HH, Liang H, Zheng E, Sahoo M, Hsu CH, Chen T, Huang CA, Wang J, Hou T, Lai C. Dimensionally anisotropic graphene with high mobility and a high on–off ratio in a three-terminal RRAM device Materials Chemistry Frontiers. 4: 1756-1763. DOI: 10.1039/D0Qm00152J |
0.358 |
|
| 2019 |
Huang JH, Hsu HH, Wang D, Lin WT, Cheng CC, Lee YJ, Hou TH. Polymorphism Control of Layered MoTe through Two-Dimensional Solid-Phase Crystallization. Scientific Reports. 9: 8810. PMID 31217432 DOI: 10.1038/S41598-019-45142-X |
0.325 |
|
| 2019 |
Lanza M, Wong H‐P, Pop E, Ielmini D, Strukov D, Regan BC, Larcher L, Villena MA, Yang JJ, Goux L, Belmonte A, Yang Y, Puglisi FM, Kang J, Magyari‐Köpe B, ... ... Hou T, et al. Recommended Methods to Study Resistive Switching Devices Advanced Electronic Materials. 5: 1800143. DOI: 10.1002/Aelm.201800143 |
0.322 |
|
| 2018 |
Lu C, Hou T, Pan T. High-Performance Double-Gate $\alpha $ -InGaZnO ISFET pH Sensor Using a HfO2 Gate Dielectric Ieee Transactions On Electron Devices. 65: 237-242. DOI: 10.1109/Ted.2017.2776144 |
0.304 |
|
| 2018 |
Liu J, Wu T, Hou T. Optimizing Incremental Step Pulse Programming for RRAM Through Device–Circuit Co-Design Ieee Transactions On Circuits and Systems Ii-Express Briefs. 65: 617-621. DOI: 10.1109/Tcsii.2018.2821268 |
0.38 |
|
| 2017 |
Liu PS, Lin CT, Hudec B, Hou TH. Internal Current Amplification Induced by Dielectric Hole Trapping in Monolayer MoS2 Transistor. Nanotechnology. PMID 28956534 DOI: 10.1088/1361-6528/Aa8Fb0 |
0.398 |
|
| 2017 |
Liu JC, Magyari-Köpe B, Qin S, Zheng X, Wong HSP, Hou T. AC stress and electronic effects on SET switching of HfO2 RRAM Applied Physics Letters. 111: 93502. DOI: 10.1063/1.4991576 |
0.328 |
|
| 2017 |
Chen HY, Brivio S, Chang CC, Frascaroli J, Hou T, Hudec B, Liu M, Lv H, Molas G, Sohn J, Spiga S, Teja VM, Vianello E, Wong HSP. Resistive random access memory (RRAM) technology: From material, device, selector, 3D integration to bottom-up fabrication Journal of Electroceramics. 39: 21-38. DOI: 10.1007/S10832-017-0095-9 |
0.486 |
|
| 2016 |
Lu C, Hou T, Pan T. Low-Voltage InGaZnO Ion-Sensitive Thin-Film Transistors Fabricated by Low-Temperature Process Ieee Transactions On Electron Devices. 63: 5060-5063. DOI: 10.1109/Ted.2016.2614959 |
0.303 |
|
| 2016 |
Yu MJ, Lin RP, Chang YH, Hou TH. High-Voltage Amorphous InGaZnO TFT With Al₂O₃ High-k Dielectric for Low-Temperature Monolithic 3-D Integration Ieee Transactions On Electron Devices. DOI: 10.1109/Ted.2016.2598396 |
0.389 |
|
| 2016 |
Hou FJ, Sung PJ, Hsueh FK, Wu CT, Lee YJ, Li Y, Samukawa S, Hou TH. Suspended Diamond-Shaped Nanowire With Four {111} Facets for High-Performance Ge Gate-All-Around FETs Ieee Transactions On Electron Devices. DOI: 10.1109/Ted.2016.2597317 |
0.319 |
|
| 2016 |
Chi LJ, Yu MJ, Chang YH, Hou TH. 1-V full-swing depletion-load a-In-Ga-Zn-O inverters for back-end-of-line compatible 3D integration Ieee Electron Device Letters. 37: 441-444. DOI: 10.1109/Led.2016.2535124 |
0.342 |
|
| 2016 |
Hudec B, Wang IT, Lai WL, Chang CC, Jančovič P, Fröhlich K, Mičušík M, Omastová M, Hou TH. Interface engineered HfO2-based 3D vertical ReRAM Journal of Physics D: Applied Physics. 49. DOI: 10.1088/0022-3727/49/21/215102 |
0.433 |
|
| 2016 |
Chang YH, Yu MJ, Lin RP, Hsu CP, Hou TH. Abnormal positive bias stress instability of In-Ga-Zn-O thin-film transistors with low-temperature Al2O3 gate dielectric Applied Physics Letters. 108. DOI: 10.1063/1.4939905 |
0.334 |
|
| 2016 |
Hudec B, Hsu CW, Wang IT, Lai WL, Chang CC, Wang T, Fröhlich K, Ho CH, Lin CH, Hou TH. 3D resistive RAM cell design for high-density storage class memory—a review Science China Information Sciences. 1-21. DOI: 10.1007/S11432-016-5566-0 |
0.374 |
|
| 2015 |
Gao L, Wang IT, Chen PY, Vrudhula S, Seo JS, Cao Y, Hou TH, Yu S. Fully parallel write/read in resistive synaptic array for accelerating on-chip learning. Nanotechnology. 26: 455204. PMID 26491032 DOI: 10.1088/0957-4484/26/45/455204 |
0.332 |
|
| 2015 |
Hou FJ, Sung PJ, Hsueh FK, Wu CT, Lee YJ, Chang MN, Li Y, Hou TH. 32-nm Multigate Si-nTFET With Microwave-Annealed Abrupt Junction Ieee Transactions On Electron Devices. DOI: 10.1109/Ted.2015.2466236 |
0.369 |
|
| 2015 |
Liu JC, Hsu CW, Wang IT, Hou TH. Categorization of Multilevel-Cell Storage-Class Memory: An RRAM Example Ieee Transactions On Electron Devices. 62: 2510-2516. DOI: 10.1109/Ted.2015.2444663 |
0.46 |
|
| 2015 |
Chou CT, Hudec B, Hsu CW, Lai WL, Chang CC, Hou TH. Crossbar array of selector-less TaOx/TiO2 bilayer RRAM Microelectronics Reliability. 55: 2220-2223. DOI: 10.1016/J.Microrel.2015.04.002 |
0.324 |
|
| 2014 |
Hsu CW, Wang YF, Wan CC, Wang IT, Chou CT, Lai WL, Lee YJ, Hou TH. Homogeneous barrier modulation of TaOx/TiO2 bilayers for ultra-high endurance three-dimensional storage-class memory. Nanotechnology. 25: 165202. PMID 24675107 DOI: 10.1088/0957-4484/25/16/165202 |
0.488 |
|
| 2013 |
Lin KL, Hou T, Lee YJ, Chang JW, Lin JH, Shieh J, Chou CT, Lei TF, Chang WH, Jang WY, Lin CH. Switching Mode and Mechanism in Binary Oxide Resistive Random Access Memory Using Ni Electrode Japanese Journal of Applied Physics. 52: 31801. DOI: 10.7567/Jjap.52.031801 |
0.315 |
|
| 2013 |
Luo W, Liu J, Lin Y, Lo C, Huang J, Lin K, Hou T. Statistical Model and Rapid Prediction of RRAM SET Speed–Disturb Dilemma Ieee Transactions On Electron Devices. 60: 3760-3766. DOI: 10.1109/Ted.2013.2281991 |
0.34 |
|
| 2013 |
Wu S, Feng H, Yu M, Wang I, Hou T. Flexible Three-Bit-Per-Cell Resistive Switching Memory Using a-IGZO TFTs Ieee Electron Device Letters. 34: 1265-1267. DOI: 10.1109/Led.2013.2278098 |
0.514 |
|
| 2013 |
Luo W, Hou T, Lin K, Lee Y, Lei T. Reversible transition of resistive switching induced by oxygen-vacancy and metal filaments in HfO2 Solid-State Electronics. 89: 167-170. DOI: 10.1016/J.Sse.2013.08.005 |
0.34 |
|
| 2012 |
Hsu C, Lo C, Wang I, Hou T. High-density 1S1R Flexible Bipolar Resistive-Switching Memory The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.2012.B-8-1 |
0.446 |
|
| 2012 |
Huang JJ, Hou T, Hsu CW, Tseng YM, Chang WH, Jang WY, Lin CH. Flexible One Diode--One Resistor Crossbar Resistive-Switching Memory Japanese Journal of Applied Physics. 51. DOI: 10.1143/Jjap.51.04Dd09 |
0.495 |
|
| 2012 |
Shaw J, Xu Q, Rajwade S, Hou TH, Kan EC. Redox molecules for a resonant tunneling barrier in nonvolatile memory Ieee Transactions On Electron Devices. 59: 1189-1198. DOI: 10.1109/Ted.2012.2184797 |
0.774 |
|
| 2012 |
Luo W, Lin K, Huang J, Lee C, Hou T. Rapid Prediction of RRAM RESET-State Disturb by Ramped Voltage Stress Ieee Electron Device Letters. 33: 597-599. DOI: 10.1109/Led.2012.2185838 |
0.358 |
|
| 2012 |
Yu MJ, Yeh YH, Cheng CC, Lin CY, Ho GT, Lai BCM, Leu CM, Hou TH, Chan YJ. Amorphous InGaZnO thin-film transistors compatible with roll-to-roll fabrication at room temperature Ieee Electron Device Letters. 33: 47-49. DOI: 10.1109/Led.2011.2170809 |
0.344 |
|
| 2012 |
Wu SC, Hou T, Chuang SH, Chou HC, Chao T, Lei TF. Polycrystalline silicon thin-film transistor with nickel-titanium oxide by sol-gel spin-coating and nitrogen implantation Solid-State Electronics. 78: 11-16. DOI: 10.1016/J.Sse.2012.06.008 |
0.342 |
|
| 2011 |
Shaw J, Zhong YW, Hughes KJ, Hou TH, Raza H, Rajwade S, Bellfy J, Engstrom JR, Abruña HD, Kan EC. Integration of self-assembled redox molecules in flash memory devices Ieee Transactions On Electron Devices. 58: 826-834. DOI: 10.1109/Ted.2010.2097266 |
0.791 |
|
| 2011 |
Wu S, Lo C, Hou T. Novel Two-Bit-per-Cell Resistive-Switching Memory for Low-Cost Embedded Applications Ieee Electron Device Letters. 32: 1662-1664. DOI: 10.1109/Led.2011.2167711 |
0.479 |
|
| 2011 |
Huang J, Tseng Y, Hsu C, Hou T. Bipolar Nonlinear $\hbox{Ni/TiO}_{2}\hbox{/}\hbox{Ni}$ Selector for 1S1R Crossbar Array Applications Ieee Electron Device Letters. 32: 1427-1429. DOI: 10.1109/Led.2011.2161601 |
0.389 |
|
| 2011 |
Lin KL, Hou T, Shieh J, Lin JH, Chou CT, Lee YJ. Electrode dependence of filament formation in HfO2 resistive-switching memory Journal of Applied Physics. 109: 84104. DOI: 10.1063/1.3567915 |
0.356 |
|
| 2011 |
Hou T, Lin K, Shieh J, Lin J, Chou C, Lee Y. Evolution of RESET current and filament morphology in low-power HfO2 unipolar resistive switching memory Applied Physics Letters. 98: 103511. DOI: 10.1063/1.3565239 |
0.412 |
|
| 2011 |
Lee J, Cha JJ, Barron S, Muller DA, Bruce Van Dover R, Amponsah EK, Hou TH, Raza H, Kan EC. Stackable nonvolatile memory with ultra thin polysilicon film and low-leakage (Ti, Dy)xOy for low processing temperature and low operating voltages Microelectronic Engineering. 88: 3462-3465. DOI: 10.1016/J.Mee.2009.04.021 |
0.738 |
|
| 2010 |
Lu CC, Huang JJ, Luo WC, Hou T, Lei TF. Characterization of Highly Strained nFET Device Performance and Channel Mobility with SMT Journal of the Electrochemical Society. 157. DOI: 10.1149/1.3416923 |
0.341 |
|
| 2010 |
Lu C, Huang J, Luo W, Hou T, Lei T. Strained Silicon Technology: Mobility Enhancement and Improved Short Channel Effect Performance by Stress Memorization Technique on nFET Devices Journal of the Electrochemical Society. 157. DOI: 10.1149/1.3321948 |
0.34 |
|
| 2010 |
Wu SH, Deng CK, Hou T, Chiou BS. Stability of La2O3 Metal-Insulator-Metal Capacitors under Constant Voltage Stress Japanese Journal of Applied Physics. 49. DOI: 10.1143/Jjap.49.04Db16 |
0.341 |
|
| 2010 |
Huang JJ, Kuo CW, Chang WC, Hou T. Transition of stable rectification to resistive-switching in Ti/TiO2/Pt oxide diode Applied Physics Letters. 96: 262901. DOI: 10.1063/1.3457866 |
0.36 |
|
| 2009 |
Shaw J, Hou TH, Raza H, Kan EC. Statistical metrology of metal nanocrystal emories with 3-D finite-element analysis Ieee Transactions On Electron Devices. 56: 1729-1735. DOI: 10.1109/Ted.2009.2024108 |
0.641 |
|
| 2008 |
Hou TH, Lee J, Shaw JT, Kan EC. Flash memory scaling: From material selection to performance improvement Materials Research Society Symposium Proceedings. 1071: 3-15. DOI: 10.1557/Proc-1071-F02-01 |
0.732 |
|
| 2008 |
Hou TH, Raza H, Afshari K, Ruebusch DJ, Kan EC. Nonvolatile memory with molecule-engineered tunneling barriers Applied Physics Letters. 92. DOI: 10.1063/1.2911741 |
0.675 |
|
| 2007 |
Hou TY. Organized structures, memory, and the decay of turbulence Proceedings of the National Academy of Sciences of the United States of America. 104: 6498-6499. PMID 17428925 DOI: 10.1073/pnas.0700639104 |
0.318 |
|
| 2007 |
Ganguly U, Lee C, Hou TH, Kan EC. Enhanced electrostatics for low-voltage operations in nanocrystal based nanotube/nanowire memories Ieee Transactions On Nanotechnology. 6: 22-28. DOI: 10.1109/Tnano.2006.888529 |
0.782 |
|
| 2007 |
Hou TH, Ganguly U, Kan EC. Fermi-level pinning in nanocrystal memories Ieee Electron Device Letters. 28: 103-106. DOI: 10.1109/Led.2006.889248 |
0.756 |
|
| 2006 |
Ganguly U, Hou T, Kan E. Effects of Metal Nanocrystals and Traps in Tunneling Rate Measurements in Metal Nanocrystal Based Carbon Nanotube Memory Mrs Proceedings. 963. DOI: 10.1557/Proc-0963-Q14-03 |
0.76 |
|
| 2006 |
Ganguly U, Hou TH, Kan EC. Process integration of composite high-k tunneling dielectric for nanocrystal based carbon nanotube memory Materials Research Society Symposium Proceedings. 961: 183-188. DOI: 10.1557/Proc-0961-O05-12 |
0.724 |
|
| 2006 |
Hou TH, Lee C, Narayanan V, Ganguly U, Kan EC. Design optimization of metal nanocrystal memory - Part II: Gate-stack engineering Ieee Transactions On Electron Devices. 53: 3103-3108. DOI: 10.1109/Ted.2006.885678 |
0.789 |
|
| 2006 |
Hou TH, Lee C, Narayanan V, Ganguly U, Kan EC. Design optimization of metal nanocrystal memory - Part I: Nanocrystal array engineering Ieee Transactions On Electron Devices. 53: 3095-3102. DOI: 10.1109/Ted.2006.885677 |
0.791 |
|
| 2006 |
Hou TH, Ganguly U, Kan EC. Programable molecular orbital states of C60 from integrated circuits Applied Physics Letters. 89. DOI: 10.1063/1.2420768 |
0.69 |
|
| 2006 |
Ganguly U, Narayanan V, Lee C, Hou TH, Kan EC. Three-dimensional analytical modeling of nanocrystal memory electrostatics Journal of Applied Physics. 99. DOI: 10.1063/1.2202695 |
0.753 |
|
| 2005 |
Lee C, Hou T, Kan EC-. Nonvolatile memory with a metal nanocrystal/nitride heterogeneous floating-gate Ieee Transactions On Electron Devices. 52: 2697-2702. DOI: 10.1109/Ted.2005.859615 |
0.687 |
|
| 2005 |
Lee C, Ganguly U, Narayanan V, Hou TH, Kim J, Kan EC. Asymmetric electric field enhancement in nanocrystal memories Ieee Electron Device Letters. 26: 879-881. DOI: 10.1109/Led.2005.859634 |
0.778 |
|
| 2003 |
Yang CW, Fang YK, Chen SF, Lin CY, Wang MF, Lin YM, Hou TH, Yao LG, Chen SC, Liang MS. Effective improvement of high-k Hf-silicate/silicon interface with thermal nitridation Electronics Letters. 39: 421-422. DOI: 10.1049/El:20030278 |
0.354 |
|
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