Year |
Citation |
Score |
2013 |
He J, Leung WY, Man TY, He L, Liang H, Zhang A, He Q, Du C, He X, Chan M. Design and Verification of a High Performance LED Driver with an Efficient Current Sensing Architecture Circuits and Systems. 4: 393-400. DOI: 10.4236/Cs.2013.45052 |
0.462 |
|
2010 |
Leung WY, Man TY, Zhang D, He J, Chan M. A high power switch-mode LED driver with an efficient current sensing scheme Journal of Low Power Electronics. 6: 133-140. DOI: 10.1166/Jolpe.2010.1063 |
0.451 |
|
2009 |
Leung WY, Man TY, Zhang D, Chan M. A multi-stage low-dropout regulator with 1 pF compensation capacitor for System-on-Chip applications Journal of Low Power Electronics. 5: 223-228. DOI: 10.1166/Jolpe.2009.1022 |
0.445 |
|
2008 |
Man TY, Leung KN, Leung CY, Mok PKT, Chan M. Development of single-transistor-control LDO based on flipped voltage follower for SoC Ieee Transactions On Circuits and Systems I: Regular Papers. 55: 1392-1401. DOI: 10.1109/Tcsi.2008.916568 |
0.444 |
|
2008 |
Man TY, Mok PKT, Chan MJ. A 0.9-V input discontinuous-conduction-mode boost converter with CMOS-control rectifier Ieee Journal of Solid-State Circuits. 43: 2036-2046. DOI: 10.1109/Jssc.2008.2001933 |
0.417 |
|
2008 |
Leung WY, Man TY, Chan M. A high-power-led driver with power-efficient LED-current sensing circuit Esscirc 2008 - Proceedings of the 34th European Solid-State Circuits Conference. 354-357. DOI: 10.1109/ESSCIRC.2008.4681865 |
0.366 |
|
2007 |
Man TY, Mok PKT, Chan M. A high slew-rate push-pull output amplifier for low-quiescent current low-dropout regulators with transient-response improvement Ieee Transactions On Circuits and Systems Ii: Express Briefs. 54: 755-759. DOI: 10.1109/Tcsii.2007.900347 |
0.435 |
|
2007 |
Man TY, Mok PKT, Chan M. Analysis of switching-loss-reduction methods for MHz-switching buck converters Ieee Conference On Electron Devices and Solid-State Circuits 2007, Edssc 2007. 1035-1038. DOI: 10.1109/EDSSC.2007.4450304 |
0.334 |
|
2006 |
Samanta P, Man TY, Chan ACK, Zhang Q, Zhu C, Chan M. Experimental evidence of two conduction mechanisms for direct tunnelling stress-induced leakage current through ultrathin silicon dioxide gate dielectrics Semiconductor Science and Technology. 21: 1393-1401. DOI: 10.1088/0268-1242/21/10/004 |
0.357 |
|
2006 |
Samanta P, Man TY, Zhang Q, Zhu C, Chan M. Direct tunneling stress-induced leakage current in ultrathin HfO 2SiO2 gate dielectric stacks Journal of Applied Physics. 100. DOI: 10.1063/1.2372313 |
0.328 |
|
2006 |
Barsatan R, Man TY, Chan M. A zero-mask one-time programmable memory array for RFID applications Proceedings - Ieee International Symposium On Circuits and Systems. 975-978. |
0.34 |
|
2006 |
Man TY, Mok PKT, Chan M. A CMOS-control rectifier for discontinuous-conduction mode switching DC-DC converters Digest of Technical Papers - Ieee International Solid-State Circuits Conference. |
0.352 |
|
2005 |
Man TY, Chan M. A 2-bit highly scalable nonvolatile memory cell with two electrically isolated charge trapping sites Microelectronics Reliability. 45: 349-354. DOI: 10.1016/J.Microrel.2004.08.016 |
0.315 |
|
2005 |
Samanta P, Man TY, Chan ACK, Zhang Q, Zhu C, Chan M. Direct tunneling stress-induced leakage current in NMOS devices with ultrathin gate oxides Ieee International Reliability Physics Symposium Proceedings. 594-595. |
0.38 |
|
2003 |
Yuen KH, Man TY, Chan ACK, Chan M. A 2-bit MONOS nonvolatile memory cell based on asymmetric double gate MOSFET structure Ieee Electron Device Letters. 24: 518-520. DOI: 10.1109/Led.2003.815157 |
0.329 |
|
2003 |
Shen J, Man TY, Chan M. 2D analysis of bottom gate misalignment and process tolerant for sub-100nm symmetric double-gate MOSFETs 2003 Ieee Conference On Electron Devices and Solid-State Circuits, Edssc 2003. 201-204. DOI: 10.1109/EDSSC.2003.1283514 |
0.338 |
|
2003 |
Yuen KH, Man TY, Chan M. A highly scalable 2-bit asymmetric double-gate MOSFET nonvolatile memory 2003 Ieee Conference On Electron Devices and Solid-State Circuits, Edssc 2003. 59-62. DOI: 10.1109/EDSSC.2003.1283483 |
0.318 |
|
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