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Yitao Liao, Ph.D. - Publications

Affiliations: 
2011 Boston University, Boston, MA, United States 
Area:
Electronics and Electrical Engineering
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16 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2016 Jin L, Zhang D, Zhang H, Fang J, Liao Y, Zhou T, Liu C, Zhong Z, Harris VG. Large area Germanium Tin nanometer optical film coatings on highly flexible aluminum substrates. Scientific Reports. 6: 34030. PMID 27667259 DOI: 10.1038/Srep34030  0.319
2016 Tzou AJ, Lin DW, Yu CR, Li ZY, Liao YK, Lin BC, Huang JK, Lin CC, Kao TS, Kuo HC, Chang CY. High-performance InGaN-based green light-emitting diodes with quaternary InAlGaN/GaN superlattice electron blocking layer. Optics Express. 24: 11387-11395. PMID 27410067 DOI: 10.1364/Oe.24.011387  0.483
2012 Moustakas TD, Liao Y, Kao CK, Thomidis C, Bhattacharyya A, Bhattarai D, Moldawer A. Deep UV-LEDs with high IQE based on AlGaN alloys with strong band structure potential fluctuations Proceedings of Spie - the International Society For Optical Engineering. 8278. DOI: 10.1117/12.916213  0.762
2012 Liao Y, Thomidis C, Kao CK, Moustakas TD. Publishers note: AlGaN based deep ultraviolet light emitting diodes with high internal quantum efficiency grown by molecular beam epitaxy (Applied Physics Letters (2011) 98 (081110)) Applied Physics Letters. 100. DOI: 10.1063/1.3675971  0.789
2012 Liao Y, Kao CK, Thomidis C, Moldawer A, Woodward J, Bhattarai D, Moustakas TD. Recent progress of efficient deep UV-LEDs by plasma-assisted molecular beam epitaxy Physica Status Solidi (C) Current Topics in Solid State Physics. 9: 798-801. DOI: 10.1002/Pssc.201100438  0.788
2012 Sudradjat FF, Zhang W, Driscoll K, Liao Y, Bhattacharyya A, Thomidis C, Zhou L, Smith DJ, Moustakas TD, Paiella R. Sequential tunneling transport in GaN/AlGaN quantum cascade structures Physica Status Solidi (C). 9: 588-591. DOI: 10.1002/Pssc.201100423  0.72
2011 Liao Y, Thomidis C, Kao CK, Moustakas TD. AlGaN based deep ultraviolet light emitting diodes with high internal quantum efficiency grown by molecular beam epitaxy Applied Physics Letters. 98. DOI: 10.1063/1.3559842  0.828
2010 Paiella R, Driscoll K, Li Y, Liao Y, Bhattacharyya A, Thomidis C, Zhou L, Smith DJ, Moustakas TD. Intersubband transitions in GaN-based quantum wells: a new materials platform for infrared device applications Proceedings of Spie. 7808: 780807. DOI: 10.1117/12.861479  0.785
2010 Sudradjat F, Zhang W, Driscoll K, Liao Y, Bhattacharyya A, Thomidis C, Zhou L, Smith DJ, Moustakas TD, Paiella R. Sequential tunneling transport characteristics of GaN/AlGaN coupled-quantum-well structures Journal of Applied Physics. 108: 103704. DOI: 10.1063/1.3511334  0.724
2010 Liao Y, Thomidis C, Kao C, Moldawer A, Zhang W, Chang Y, Nikiforov AY, Bellotti E, Moustakas TD. Milliwatt power AlGaN‐based deep ultraviolet light emitting diodes by plasma‐assisted molecular beam epitaxy Physica Status Solidi-Rapid Research Letters. 4: 49-51. DOI: 10.1002/Pssr.200903400  0.776
2010 Driscoll K, Liao Y, Bhattacharyya A, Moustakas TD, Paiella R, Zhou L, Smith DJ. Optical and structural characterization of GaN/AlGaN quantum wells for intersubband device applications Physica Status Solidi (C). 7: 2394-2397. DOI: 10.1002/Pssc.200983905  0.748
2009 Paiella R, Driscoll K, Liao Y, Bhattacharyya A, Zhou L, Smith DJ, Moustakas TD. Short-Wavelength Intersubband Light Emission from Optically Pumped GaN/AlN Quantum Wells Mrs Proceedings. 1202. DOI: 10.1557/Proc-1202-I10-08  0.77
2009 Liao Y, Thomidis C, Bhattacharyya A, Kao C, Moldawer A, Zhang W, Moustakas TD. Development of Milliwatt Power AlGaN-based Deep UV-LEDs by Plasma-assisted Molecular Beam Epitaxy Mrs Proceedings. 1202. DOI: 10.1557/Proc-1202-I10-01  0.772
2009 Sudradjat F, Driscoll K, Liao Y, Bhattacharyya A, Thomidis C, Zhou L, Smith DJ, Moustakas TD, Paiella R. Experimental Observation of Sequential Tunneling Transport in GaN/AlGaN Coupled Quantum Wells Grown on a Free-Standing GaN Substrate Mrs Proceedings. 1202. DOI: 10.1557/Proc-1202-I09-20  0.747
2009 Driscoll K, Liao Y, Bhattacharyya A, Zhou L, Smith DJ, Moustakas TD, Paiella R. Optically pumped intersubband emission of short-wave infrared radiation with GaN/AlN quantum wells Applied Physics Letters. 94: 081120. DOI: 10.1063/1.3089840  0.74
2008 Li Y, Bhattacharyya A, Thomidis C, Liao Y, Moustakas TD, Paiella R. Refractive-index nonlinearities of intersubband transitions in GaN/AlN quantum-well waveguides Journal of Applied Physics. 104: 083101. DOI: 10.1063/1.2996107  0.736
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