Year |
Citation |
Score |
2016 |
Jin L, Zhang D, Zhang H, Fang J, Liao Y, Zhou T, Liu C, Zhong Z, Harris VG. Large area Germanium Tin nanometer optical film coatings on highly flexible aluminum substrates. Scientific Reports. 6: 34030. PMID 27667259 DOI: 10.1038/Srep34030 |
0.319 |
|
2016 |
Tzou AJ, Lin DW, Yu CR, Li ZY, Liao YK, Lin BC, Huang JK, Lin CC, Kao TS, Kuo HC, Chang CY. High-performance InGaN-based green light-emitting diodes with quaternary InAlGaN/GaN superlattice electron blocking layer. Optics Express. 24: 11387-11395. PMID 27410067 DOI: 10.1364/Oe.24.011387 |
0.483 |
|
2012 |
Moustakas TD, Liao Y, Kao CK, Thomidis C, Bhattacharyya A, Bhattarai D, Moldawer A. Deep UV-LEDs with high IQE based on AlGaN alloys with strong band structure potential fluctuations Proceedings of Spie - the International Society For Optical Engineering. 8278. DOI: 10.1117/12.916213 |
0.762 |
|
2012 |
Liao Y, Thomidis C, Kao CK, Moustakas TD. Publishers note: AlGaN based deep ultraviolet light emitting diodes with high internal quantum efficiency grown by molecular beam epitaxy (Applied Physics Letters (2011) 98 (081110)) Applied Physics Letters. 100. DOI: 10.1063/1.3675971 |
0.789 |
|
2012 |
Liao Y, Kao CK, Thomidis C, Moldawer A, Woodward J, Bhattarai D, Moustakas TD. Recent progress of efficient deep UV-LEDs by plasma-assisted molecular beam epitaxy Physica Status Solidi (C) Current Topics in Solid State Physics. 9: 798-801. DOI: 10.1002/Pssc.201100438 |
0.788 |
|
2012 |
Sudradjat FF, Zhang W, Driscoll K, Liao Y, Bhattacharyya A, Thomidis C, Zhou L, Smith DJ, Moustakas TD, Paiella R. Sequential tunneling transport in GaN/AlGaN quantum cascade structures Physica Status Solidi (C). 9: 588-591. DOI: 10.1002/Pssc.201100423 |
0.72 |
|
2011 |
Liao Y, Thomidis C, Kao CK, Moustakas TD. AlGaN based deep ultraviolet light emitting diodes with high internal quantum efficiency grown by molecular beam epitaxy Applied Physics Letters. 98. DOI: 10.1063/1.3559842 |
0.828 |
|
2010 |
Paiella R, Driscoll K, Li Y, Liao Y, Bhattacharyya A, Thomidis C, Zhou L, Smith DJ, Moustakas TD. Intersubband transitions in GaN-based quantum wells: a new materials platform for infrared device applications Proceedings of Spie. 7808: 780807. DOI: 10.1117/12.861479 |
0.785 |
|
2010 |
Sudradjat F, Zhang W, Driscoll K, Liao Y, Bhattacharyya A, Thomidis C, Zhou L, Smith DJ, Moustakas TD, Paiella R. Sequential tunneling transport characteristics of GaN/AlGaN coupled-quantum-well structures Journal of Applied Physics. 108: 103704. DOI: 10.1063/1.3511334 |
0.724 |
|
2010 |
Liao Y, Thomidis C, Kao C, Moldawer A, Zhang W, Chang Y, Nikiforov AY, Bellotti E, Moustakas TD. Milliwatt power AlGaN‐based deep ultraviolet light emitting diodes by plasma‐assisted molecular beam epitaxy Physica Status Solidi-Rapid Research Letters. 4: 49-51. DOI: 10.1002/Pssr.200903400 |
0.776 |
|
2010 |
Driscoll K, Liao Y, Bhattacharyya A, Moustakas TD, Paiella R, Zhou L, Smith DJ. Optical and structural characterization of GaN/AlGaN quantum wells for intersubband device applications Physica Status Solidi (C). 7: 2394-2397. DOI: 10.1002/Pssc.200983905 |
0.748 |
|
2009 |
Paiella R, Driscoll K, Liao Y, Bhattacharyya A, Zhou L, Smith DJ, Moustakas TD. Short-Wavelength Intersubband Light Emission from Optically Pumped GaN/AlN Quantum Wells Mrs Proceedings. 1202. DOI: 10.1557/Proc-1202-I10-08 |
0.77 |
|
2009 |
Liao Y, Thomidis C, Bhattacharyya A, Kao C, Moldawer A, Zhang W, Moustakas TD. Development of Milliwatt Power AlGaN-based Deep UV-LEDs by Plasma-assisted Molecular Beam Epitaxy Mrs Proceedings. 1202. DOI: 10.1557/Proc-1202-I10-01 |
0.772 |
|
2009 |
Sudradjat F, Driscoll K, Liao Y, Bhattacharyya A, Thomidis C, Zhou L, Smith DJ, Moustakas TD, Paiella R. Experimental Observation of Sequential Tunneling Transport in GaN/AlGaN Coupled Quantum Wells Grown on a Free-Standing GaN Substrate Mrs Proceedings. 1202. DOI: 10.1557/Proc-1202-I09-20 |
0.747 |
|
2009 |
Driscoll K, Liao Y, Bhattacharyya A, Zhou L, Smith DJ, Moustakas TD, Paiella R. Optically pumped intersubband emission of short-wave infrared radiation with GaN/AlN quantum wells Applied Physics Letters. 94: 081120. DOI: 10.1063/1.3089840 |
0.74 |
|
2008 |
Li Y, Bhattacharyya A, Thomidis C, Liao Y, Moustakas TD, Paiella R. Refractive-index nonlinearities of intersubband transitions in GaN/AlN quantum-well waveguides Journal of Applied Physics. 104: 083101. DOI: 10.1063/1.2996107 |
0.736 |
|
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