Ruiyun Fu, Ph.D. - Publications
Affiliations: | 2013 | Electrical Engineering | University of South Carolina, Columbia, SC |
Area:
Electronics and Electrical EngineeringYear | Citation | Score | |||
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2013 | Fu R, Grekov A, Peng K, Santi E. Parameter extraction procedure for a physics-based power SiC Schottky diode model Conference Proceedings - Ieee Applied Power Electronics Conference and Exposition - Apec. 545-552. DOI: 10.1109/Tia.2014.2304617 | 0.596 | |||
2012 | Fu R, Grekov A, Hudgins J, Mantooth A, Santi E. Power SiC DMOSFET model accounting for nonuniform current distribution in JFET region Ieee Transactions On Industry Applications. 48: 181-190. DOI: 10.1109/Tia.2011.2175678 | 0.6 | |||
2011 | Grekov AE, Chen Z, Fu R, Hudgins JL, Mantooth HA, Sheridan DC, Casady J, Santi E. Parameter extraction procedure for vertical SiC power JFET Ieee Transactions On Industry Applications. 47: 1862-1871. DOI: 10.1109/Tia.2011.2155018 | 0.619 | |||
2011 | Chen Z, Grekov AE, Fu R, Hudgins JL, Mantooth HA, Sheridan DC, Casady J, Santi E. Model for power SiC vertical JFET with unified description of linear and saturation operating regimes Ieee Transactions On Industry Applications. 47: 1853-1861. DOI: 10.1109/Tia.2011.2154296 | 0.638 | |||
2011 | Platania E, Chen Z, Chimento F, Grekov AE, Fu R, Lu L, Raciti A, Hudgins JL, Mantooth HA, Sheridan DC, Casady J, Santi E. A physics-based model for a SiC JFET accounting for electric-field- dependent mobility Ieee Transactions On Industry Applications. 47: 199-211. DOI: 10.1109/Tia.2010.2090843 | 0.617 | |||
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