| Year |
Citation |
Score |
| 2019 |
Mohanty D, Lu Z, Sun X, Xiang Y, Gao L, Shi J, Zhang L, Kisslinger K, Washington MA, Wang G, Lu T, Bhat IB. Growth of epitaxial CdTe thin films on amorphous substrates using single crystal graphene buffer Carbon. 144: 519-524. DOI: 10.1016/J.Carbon.2018.12.094 |
0.462 |
|
| 2018 |
Koirala M, Wu JW, Weltz A, Dahal R, Danon Y, Bhat I. Electrophoretic Deposition of 10B Nano/Micro Particles in Deep Silicon Trenches for the Fabrication of Solid State Thermal Neutron Detectors International Journal of High Speed Electronics and Systems. 27: 1840002. DOI: 10.1142/S0129156418400025 |
0.394 |
|
| 2018 |
Mohanty D, Lu Z, Sun X, Xiang Y, Wang Y, Ghoshal D, Shi J, Gao L, Shi S, Washington M, Wang G, Lu T, Bhat I. Metalorganic vapor phase epitaxy of large size CdTe grains on mica through chemical and van der Waals interactions Physical Review Materials. 2. DOI: 10.1103/Physrevmaterials.2.113402 |
0.303 |
|
| 2018 |
Mohanty D, Sun X, Lu Z, Washington M, Wang G, Lu T, Bhat IB. Analyses of orientational superlattice domains in epitaxial ZnTe thin films grown on graphene and mica Journal of Applied Physics. 124: 175301. DOI: 10.1063/1.5052644 |
0.395 |
|
| 2018 |
Xiang Y, Yang Y, Guo F, Sun X, Lu Z, Mohanty D, Bhat I, Washington M, Lu T, Wang G. van der Waals epitaxy of SnS film on single crystal graphene buffer layer on amorphous SiO2/Si Applied Surface Science. 435: 759-768. DOI: 10.1016/J.Apsusc.2017.11.098 |
0.484 |
|
| 2017 |
Chowdhury S, Hitchcock CW, Dahal RP, Bhat IB, Chow TP. Current-Controlled Negative Resistance in High-Voltage 4H-SiC p-i-n Rectifiers Ieee Transactions On Electron Devices. 64: 897-900. DOI: 10.1109/Ted.2016.2633463 |
0.355 |
|
| 2017 |
Chowdhury S, Hitchcock CW, Stum Z, Dahal RP, Bhat IB, Chow TP. Operating Principles, Design Considerations, and Experimental Characteristics of High-Voltage 4H-SiC Bidirectional IGBTs Ieee Transactions On Electron Devices. 64: 888-896. DOI: 10.1109/Ted.2016.2631241 |
0.35 |
|
| 2017 |
Becker JJ, Campbell CM, Zhao Y, Boccard M, Mohanty D, Lassise M, Suarez E, Bhat I, Holman ZC, Zhang Y. Monocrystalline CdTe/MgCdTe Double-Heterostructure Solar Cells With ZnTe Hole Contacts Ieee Journal of Photovoltaics. 7: 307-312. DOI: 10.1109/Jphotov.2016.2626139 |
0.392 |
|
| 2017 |
Xie W, Lu T, Wang G, Bhat I, Zhang S. Enhanced van der Waals epitaxy via electron transfer-enabled interfacial dative bond formation Physical Review Materials. 1. DOI: 10.1103/Physrevmaterials.1.063402 |
0.343 |
|
| 2017 |
Guo F, Lu Z, Mohanty D, Wang T, Bhat IB, Zhang S, Shi S, Washington MA, Wang G, Lu T. A two-step dry process for Cs2SnI6 perovskite thin film Materials Research Letters. 5: 540-546. DOI: 10.1080/21663831.2017.1346525 |
0.377 |
|
| 2017 |
Wu J, Weltz A, Koirala M, Lu JJ, Dahal R, Danon Y, Bhat IB. Boron-10 nanoparticles filled silicon trenches for thermal neutron detection application Applied Physics Letters. 110: 192105. DOI: 10.1063/1.4983289 |
0.376 |
|
| 2017 |
Yang Y-, Seewald L, Mohanty D, Wang Y, Zhang LH, Kisslinger K, Xie W, Shi J, Bhat I, Zhang S, Lu T-, Wang G-. Surface and interface of epitaxial CdTe film on CdS buffered van der Waals mica substrate Applied Surface Science. 413: 219-232. DOI: 10.1016/J.Apsusc.2017.03.260 |
0.449 |
|
| 2016 |
Dahal R, Ahmed K, Wu JW, Weltz A, Lu JJQ, Danon Y, Bhat IB. Anisotropic charge carrier transport in free-standing hexagonal boron nitride thin films Applied Physics Express. 9. DOI: 10.7567/Apex.9.065801 |
0.381 |
|
| 2016 |
Dahal R, Chowdhury S, Hitchcock C, Chow TP, Bhat IB. Fabrication of thick free-standing lightly-doped n-type 4H-SiC wafers Materials Science Forum. 897: 379-382. DOI: 10.4028/Www.Scientific.Net/Msf.897.379 |
0.462 |
|
| 2016 |
Chowdhury S, Hitchcock C, Dahal R, Bhat IB, Chow TP. 4H-SiC n-channel DMOS IGBTs on (0001) and (000-1) oriented lightly doped free-standing substrates Materials Science Forum. 858: 954-957. DOI: 10.4028/Www.Scientific.Net/Msf.858.954 |
0.366 |
|
| 2016 |
Chen L, Lu Z-, Lu T-, Bhat I, Zhang SB, Goyal A, Zhang LH, Kisslinger K, Wang G-. Heteroepitaxy of Ge on Cube-Textured Ni(001) Foils Through CaF2 Buffer Layer Mrs Advances. 1: 2947-2952. DOI: 10.1557/Adv.2016.517 |
0.394 |
|
| 2016 |
Banerjee S, Dahal R, Bhat I. Low Temperature Metalorganic Chemical Vapor Deposition of Semiconductor Thin Films for Surface Passivation of Photovoltaic Devices Mrs Advances. 1: 3379-3390. DOI: 10.1557/Adv.2016.386 |
0.461 |
|
| 2016 |
Chowdhury S, Hitchcock C, Stum Z, Dahal RP, Bhat IB, Chow TP. Experimental demonstration of high-voltage 4H-SiC bi-directional IGBTs Ieee Electron Device Letters. 37: 1033-1036. DOI: 10.1109/Led.2016.2581419 |
0.367 |
|
| 2016 |
Chowdhury S, Hitchcock C, Stum Z, Dahal R, Bhat IB, Chow TP. 4H-SiC n-channel insulated gate bipolar transistors on (0001) and (000-1) oriented free-standing n- substrates Ieee Electron Device Letters. 37: 317-320. DOI: 10.1109/Led.2016.2521164 |
0.363 |
|
| 2016 |
Mohanty D, Xie W, Wang Y, Lu Z, Shi J, Zhang S, Wang GC, Lu TM, Bhat IB. Van der Waals epitaxy of CdTe thin film on graphene Applied Physics Letters. 109. DOI: 10.1063/1.4964127 |
0.45 |
|
| 2016 |
Ahmed K, Dahal R, Weltz A, Lu JQ, Danon Y, Bhat IB. Growth of hexagonal boron nitride on (111) Si for deep UV photonics and thermal neutron detection Applied Physics Letters. 109. DOI: 10.1063/1.4962831 |
0.495 |
|
| 2016 |
Xie W, Lucking M, Chen L, Bhat I, Wang GC, Lu TM, Zhang S. Modular Approach for Metal-Semiconductor Heterostructures with Very Large Interface Lattice Misfit: A First-Principles Perspective Crystal Growth and Design. 16: 2328-2334. DOI: 10.1021/Acs.Cgd.6B00118 |
0.408 |
|
| 2016 |
Chen L, Xie W, Wang GC, Bhat I, Zhang S, Goyal A, Lu TM. Heteroepitaxy of large grain Ge film on cube-textured Ni(001) foils through CaF2 buffer layer Thin Solid Films. 603: 428-434. DOI: 10.1016/J.Tsf.2016.03.007 |
0.423 |
|
| 2016 |
Mohanty D, Su PY, Wang GC, Lu TM, Bhat IB. Effect of CdCl2 heat treatment on ZnTe back electron reflector layer in thin film CdTe solar cells Solar Energy. 135: 209-214. DOI: 10.1016/J.Solener.2016.05.057 |
0.423 |
|
| 2016 |
Su PY, Banerjee S, Dahal R, Bhat IB. Crystalline and transport properties of Ga2Te3 synthesized by metalorganic chemical vapor deposition Electronic Materials Letters. 12: 82-86. DOI: 10.1007/S13391-015-5285-5 |
0.5 |
|
| 2015 |
Su PY, Dahal R, Wang GC, Zhang S, Lu TM, Bhat IB. Single-Crystal CdTe Homojunction Structures for Solar Cell Applications Journal of Electronic Materials. DOI: 10.1007/S11664-015-3829-Y |
0.435 |
|
| 2015 |
Banerjee S, Dahal R, Bhat IB. A Novel Method to Obtain Higher Deposition Rates of CdTe Using Low Temperature LPCVD for Surface Passivation of HgCdTe Journal of Electronic Materials. DOI: 10.1007/S11664-015-3743-3 |
0.454 |
|
| 2014 |
Chen L, Dash J, Su P, Lin CF, Bhat I, Lu TM, Wang GC. Instrument response of reflection high energy electron diffraction pole figure Applied Surface Science. 288: 458-465. DOI: 10.1016/J.Apsusc.2013.10.055 |
0.439 |
|
| 2014 |
Banerjee S, Su PY, Dahal R, Bhat IB, Bergeson JD, Blissett C, Aqariden F, Hanyaloglu B. Surface passivation of HgCdTe using low-pressure chemical vapor deposition of CdTe Journal of Electronic Materials. 43: 3012-3017. DOI: 10.1007/S11664-014-3178-2 |
0.468 |
|
| 2014 |
Su PY, Lee C, Wang GC, Lu TM, Bhat IB. CdTe/ZnTe/GaAs heterostructures for single-crystal CdTe solar cells Journal of Electronic Materials. 43: 2895-2900. DOI: 10.1007/S11664-014-3142-1 |
0.529 |
|
| 2013 |
Huang KC, Dahal R, Lu JJQ, Danon Y, Bhat IB. Continuous p-n junction with extremely low leakage current for microstructured solid-state neutron detector applications Proceedings of Spie - the International Society For Optical Engineering. 8710. DOI: 10.1117/12.2016121 |
0.411 |
|
| 2013 |
Huang KC, Dahal R, Lu JJQ, Danon Y, Bhat IB. High detection efficiency micro-structured solid-state neutron detector with extremely low leakage current fabricated with continuous p-n junction Applied Physics Letters. 102. DOI: 10.1063/1.4802204 |
0.393 |
|
| 2013 |
Wang GC, Zhang LH, Kisslinger K, Gaire C, Goyal A, Bhat I, Lu TM. Orientational domains in metalorganic chemical vapor deposited CdTe(111) film on cube-textured Ni Thin Solid Films. 531: 217-221. DOI: 10.1016/J.Tsf.2013.01.082 |
0.472 |
|
| 2013 |
Wan C, Orent T, Myers T, Bhat I, Stoltz A, Pellegrino J. A Novel Metal-Rich Anneal for In Vacuo Passivation of High-Aspect-Ratio Mercury Cadmium Telluride Surfaces Journal of Electronic Materials. 42: 3359-3366. DOI: 10.1007/S11664-013-2818-2 |
0.412 |
|
| 2012 |
Huang KC, Dahal R, Licausi N, Lu JJQ, Danon Y, Bhat IB. Boron filling of high aspect ratio holes by chemical vapor deposition for solid-state neutron detector applications Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 30. DOI: 10.1116/1.4742856 |
0.326 |
|
| 2012 |
Gaire C, Rao S, Riley M, Chen L, Goyal A, Lee S, Bhat I, Lu TM, Wang GC. Epitaxial growth of CdTe thin film on cube-textured Ni by metal-organic chemical vapor deposition Thin Solid Films. 520: 1862-1865. DOI: 10.1016/J.Tsf.2011.09.019 |
0.468 |
|
| 2012 |
Gaire C, Palazzo J, Bhat I, Goyal A, Wang GC, Lu TM. Low temperature epitaxial growth of Ge on CaF 2 buffered cube-textured Ni Journal of Crystal Growth. 343: 33-37. DOI: 10.1016/J.Jcrysgro.2012.01.035 |
0.416 |
|
| 2012 |
Shintri S, Rao S, Wijewarnasuriya P, Trivedi S, Bhat I. Recent Results on Growth of (211)B CdTe on (211)Si with Intermediate Ge and ZnTe Buffer Layers by Metalorganic Vapor-Phase Epitaxy Journal of Electronic Materials. 41: 2824-2827. DOI: 10.1007/S11664-012-1947-3 |
0.526 |
|
| 2012 |
Bhat IB, Rao SR, Shintri S, Jacobs RN. Blanket and patterned growth of CdTe on (211)Si substrates by metal-organic vapor phase epitaxy Physica Status Solidi (C) Current Topics in Solid State Physics. 9: 1712-1715. DOI: 10.1002/Pssc.201100765 |
0.506 |
|
| 2012 |
Shintri S, Rao S, Schaper C, Palosz W, Trivedi S, Semendy F, Wijewarnasuriya P, Bhat I. Metalorganic Vapor Phase Epitaxial Growth of (211)B CdTe on Nanopatterned (211)Si Physica Status Solidi (C). 9: 1716-1719. DOI: 10.1002/Pssc.201100653 |
0.46 |
|
| 2011 |
LiCausi N, Clinton J, Danon Y, Lu JJQ, Bhat IB. Deposition and etching of conformai boron films for neutron detector applications Materials Research Society Symposium Proceedings. 1307: 54-59. DOI: 10.1557/Opl.2011.322 |
0.787 |
|
| 2011 |
Licausi N, Rao S, Bhat I. Low-Pressure Chemical Vapor Deposition of CdS and Atomic Layer Deposition of CdTe Films for HgCdTe Surface Passivation Journal of Electronic Materials. 40: 1668-1673. DOI: 10.1007/S11664-011-1640-Y |
0.787 |
|
| 2011 |
Shintri S, Rao S, Sarney W, Garg S, Palosz W, Trivedi S, Wijewarnasuriya P, Bhat I. Effect of As Passivation on Vapor-Phase Epitaxial Growth of Ge on (211)Si as a Buffer Layer for CdTe Epitaxy Journal of Electronic Materials. 40: 1637-1641. DOI: 10.1007/S11664-011-1627-8 |
0.531 |
|
| 2011 |
Rao SR, Shintri SS, Markunas JK, Jacobs RN, Bhat IB. High-quality (211)B CdTe on (211)Si substrates using metalorganic vapor-phase epitaxy Journal of Electronic Materials. 40: 1790-1794. DOI: 10.1007/S11664-011-1586-0 |
0.451 |
|
| 2010 |
Lu T, Li H, Gaire C, LiCausi N, Chan TL, Bhat I, Zhang S, Wang GC. Quasi-single Crystal Semiconductors on Glass Substrates Through Biaxially Oriented Buffer Layers Mrs Proceedings. 1268. DOI: 10.1557/Proc-1268-Ee03-06 |
0.801 |
|
| 2010 |
Shintri S, Rao S, Li H, Bhat I, Jha S, Liu C, Kuech T, Palosz W, Trivedi S, Semendy F, Wijewarnasuriya P, Chen Y. Dislocation reduction in CdTe epilayers grown on silicon substrates using buffered nanostructures Proceedings of Spie. 7768. DOI: 10.1117/12.861735 |
0.554 |
|
| 2010 |
Gaire C, Clemmer PC, Li HF, Parker TC, Snow P, Bhat I, Lee S, Wang GC, Lu TM. Small angle grain boundary Ge films on biaxial CaF2/glass substrate Journal of Crystal Growth. 312: 607-610. DOI: 10.1016/J.Jcrysgro.2009.11.051 |
0.506 |
|
| 2010 |
Rao SR, Shintri SS, Markunas JK, Jacobs RN, Bhat IB. Cyclic annealing during metalorganic vapor-phase epitaxial growth of (211)B CdTe on (211) si substrates Journal of Electronic Materials. 39: 996-1000. DOI: 10.1007/S11664-010-1095-6 |
0.486 |
|
| 2009 |
Losee PA, Wang Y, Li C, Sharma SK, Bhat IB, Chow TP, Gutmann RJ. Comparative evaluation of anode layers on the electrical characteristics of high voltage 4H-SiC PiN diodes Materials Science Forum. 600: 1003-1006. DOI: 10.4028/Www.Scientific.Net/Msf.600-603.1003 |
0.397 |
|
| 2009 |
Yuan W, Tang F, Li H-, Parker T, LiCausi N, Lu T-, Bhat I, Wang G-, Lee S. Biaxial CdTe/CaF2 films growth on amorphous surface Thin Solid Films. 517: 6623-6628. DOI: 10.1016/J.Tsf.2009.04.052 |
0.786 |
|
| 2009 |
Licausi N, Yuan W, Tang F, Parker T, Li H, Wang G, Lu T, Bhat I. Growth of CdTe Films on Amorphous Substrates Using CaF2 Nanorods as a Buffer Layer Journal of Electronic Materials. 38: 1600-1604. DOI: 10.1007/S11664-009-0807-2 |
0.797 |
|
| 2009 |
Rao SR, Shintri SS, Bhat IB. Metalorganic vapor-phase epitaxial growth of (211)B CdTe on (211) si using ge interfacial layer Journal of Electronic Materials. 38: 1618-1623. DOI: 10.1007/S11664-009-0719-1 |
0.478 |
|
| 2008 |
LiCausi N, Dingley J, Danon Y, Lu JQ, Bhat IB. A novel solid-state self powered neutron detector Proceedings of Spie - the International Society For Optical Engineering. 7079. DOI: 10.1117/12.797036 |
0.754 |
|
| 2007 |
Wang Y, Losee PA, Balachandran S, Bhat IB, Chow TP, Skromme BJ, Kim JK, Schubert EF. Achieving low sheet resistance from implanted P-type layers in 4H-SiC using high temperature graphite capped annealing Materials Science Forum. 556: 567-570. DOI: 10.4028/Www.Scientific.Net/Msf.556-557.567 |
0.37 |
|
| 2007 |
Losee PA, Li C, Kumar RJ, Chow TP, Bhat IB, Gutmann RJ. Electrical characteristics and carrier lifetime measurements in high voltage 4H-SiC PiN diodes International Journal of High Speed Electronics and Systems. 17: 43-48. DOI: 10.1142/9789812770332_0009 |
0.308 |
|
| 2006 |
Yan F, Devaty RP, Choyke WJ, Gali A, Bhat IB, Larkin DJ. Evidence for phosphorus on carbon and silicon sites in 6H and 4H SiC Materials Science Forum. 527: 585-588. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.585 |
0.314 |
|
| 2006 |
Twigg ME, Stahlbush RE, Losee PA, Li C, Bhat IB, Chow TP. Overlapping Shockley/Frank faults in 4H-SiC PiN diodes Materials Science Forum. 527: 383-386. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.383 |
0.308 |
|
| 2006 |
Li C, Bhat I, Chow TP. Studies on Selective Growth and In Situ Etching of 4H-SiC Using a TaC Mask Materials Science Forum. 259-262. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.259 |
0.451 |
|
| 2006 |
Losee PA, Li C, Kumar RJ, Chow TP, Bhat IB, Gutmann RJ, Stahlbush RE. Improving switching characteristics of 4H-SiC junction rectifiers using epitaxial and implanted anodes with epitaxial refill Materials Science Forum. 527: 1363-1366. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.1363 |
0.346 |
|
| 2006 |
Abedin MN, Refaat TF, Bhat IB, Xiao Y, Johnson DG. Bias selective operation of Sb-based two-color photodetectors Proceedings of Spie - the International Society For Optical Engineering. 6297. DOI: 10.1117/12.680969 |
0.35 |
|
| 2006 |
Bhat I, Zhang R. Anisotropy in selective metalorganic vapor phase epitaxy of CdTe on GaAs and Si substrates Journal of Electronic Materials. 35: 1293-1298. DOI: 10.1007/S11664-006-0257-Z |
0.466 |
|
| 2006 |
Bhagwat V, Xiao Y, Bhat I, Dutta P, Refaat TF, Abedin MN, Kumar V. Analysis of leakage currents in MOCVD grown GaInAsSb based photodetectors operating at 2 µm Journal of Electronic Materials. 35: 1613-1617. DOI: 10.1007/S11664-006-0206-X |
0.306 |
|
| 2006 |
Zhu L, Canhua LI, Chow TP, Bhat IB, Jones KA, Scozzie C, Agarwal A. Characterization of Ti schottky diodes on epi-regrown 4H-SiC Journal of Electronic Materials. 35: 754-757. DOI: 10.1007/S11664-006-0134-9 |
0.415 |
|
| 2005 |
Losee PA, Li C, Seiler J, Stahlbush RE, Chow TP, Bhat IB, Gutmann RJ. Electrical characteristics and reliability of 4H-SiC pin diodes fabricated on in-house grown and commercial epitaxial films Materials Science Forum. 483: 961-964. DOI: 10.4028/Www.Scientific.Net/Msf.483-485.961 |
0.445 |
|
| 2005 |
Kumar RJ, Losee PA, Li C, Seiler J, Bhat IB, Chow TP, Borrego JM, Gutmann RJ. Characterization of 4H-SiC epitaxial layers by microwave photoconductivity decay Materials Science Forum. 483: 405-408. DOI: 10.4028/Www.Scientific.Net/Msf.483-485.405 |
0.403 |
|
| 2005 |
Li CH, Losee PA, Seiler J, Chow TP, Bhat I. Characteristics of Trench-Refilled 4H-SiC P-N Junction Diodes Fabricated by Selective Epitaxial Growth Materials Science Forum. 159-162. DOI: 10.4028/Www.Scientific.Net/Msf.483-485.159 |
0.397 |
|
| 2005 |
Xiao Y, Bhat I, Abedin MN. Performance dependences on multiplication layer thickness for InP/InGaAs avalanche photodiodes based on time domain modeling Proceedings of Spie. 5881. DOI: 10.1117/12.615057 |
0.326 |
|
| 2005 |
Abedin MN, Refaat TF, Xiao Y, Bhat I. Characterization of Dual-Band Infrared Detectors For Application to Remote Sensing Proceedings of Spie. 5883: 588307. DOI: 10.1117/12.614938 |
0.417 |
|
| 2005 |
Xiao Y, Bhat I, Refaat TF, Abedin MN, Shao Q. MOVPE of GaSb/InGaAsSb multilayers and fabrication of dual band photodetectors Proceedings of Spie. 5881: 588101. DOI: 10.1117/12.614208 |
0.438 |
|
| 2005 |
Refaat TF, Abedin MN, Bhat IB, Xiao Y. Sb-based two-color photo-detector fabrication and characterization Optical Engineering. 44. DOI: 10.1117/1.2147576 |
0.334 |
|
| 2005 |
Li C, Losee P, Seiler J, Bhat I, Chow TP. Fabrication and characterization of 4H-SiC P-N junction diodes by selective-epitaxial growth using TaC as the mask Journal of Electronic Materials. 34: 450-456. DOI: 10.1007/S11664-005-0126-1 |
0.384 |
|
| 2005 |
Yu J, Bhat IB. Effect of substrate orientation on the growth rate and surface morphology on GaSb grown by metal-organic vapor phase epitaxy Materials Research Society Symposium Proceedings. 864: 51-56. |
0.309 |
|
| 2004 |
Skromme BJ, Mikhov MK, Chen L, Samson G, Wang RJ, Li CH, Bhat I. Characterization of double stacking faults induced by thermal processing of heavily n-doped 4H-SiC substrates Materials Science Forum. 581-584. DOI: 10.4028/Www.Scientific.Net/Msf.457-460.581 |
0.319 |
|
| 2004 |
Li CH, Seiler J, Bhat I, Chow TP. Selective Growth of 4H-SiC on 4H-SiC Substrates using a High Temperature Mask Materials Science Forum. 185-188. DOI: 10.4028/Www.Scientific.Net/Msf.457-460.185 |
0.335 |
|
| 2004 |
Refaat TF, Abedin MN, Bhat IB, Dutta PS, Singh UN. Characterization of InGaSb/GaSb p-n photodetectors in the 1.0- to 2.4-μm wavelength range Optical Engineering. 43: 1014-1015. DOI: 10.1117/1.1695566 |
0.363 |
|
| 2004 |
Refaat TF, Nurul Abedin M, Bhagwat V, Bhat IB, Dutta PS, Singh UN. InGaSb photodetectors using an InGaSb substrate for 2 μm applications Applied Physics Letters. 85: 1874-1876. DOI: 10.1063/1.1787893 |
0.438 |
|
| 2004 |
Li C, Bhat IB, Wang R, Seiler J. Electro-chemical mechanical polishing of silicon carbide Journal of Electronic Materials. 33: 481-486. DOI: 10.1007/S11664-004-0207-6 |
0.603 |
|
| 2003 |
Wang R, Bhat IB, Chow TP. Chemical Vapor Deposition of n-Type SiC Epitaxial Layers Using Phosphine and Nitrogen as the Precursors Materials Science Forum. 433: 145-148. DOI: 10.4028/Www.Scientific.Net/Msf.433-436.145 |
0.444 |
|
| 2003 |
Rajagopalan G, Reddy NS, Ehsani H, Bhat IB, Dutta PS, Gutmann RJ, Nichols G, Sulima O. A simple single-step diffusion and emitter etching process for high-efficiency gallium-antimonide thermophotovoltaic devices Journal of Electronic Materials. 32: 1317-1321. DOI: 10.1007/S11664-003-0029-Y |
0.312 |
|
| 2002 |
Wang RJ, Bhat I, Chow TP. Vapor-Phase Epitaxial Growth of n-Type SiC Using Phosphine as the Precursor Materials Science Forum. 211-214. DOI: 10.4028/Www.Scientific.Net/Msf.389-393.211 |
0.375 |
|
| 2002 |
Cui H, Bhat IB, Murarka SP, Lu H, Hsia WJ, Catabay W. Copper drift in methyl-doped silicon oxide film Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 20: 1987-1993. DOI: 10.1116/1.1503779 |
0.336 |
|
| 2002 |
Lu H, Cui H, Bhat I, Murarka S, Lanford W, Hsia W, Li W. Characterization of methyl-doped silicon oxide film deposited using Flowfill™ chemical vapor deposition technology Journal of Vacuum Science & Technology B. 20: 828-833. DOI: 10.1116/1.1470510 |
0.471 |
|
| 2002 |
Wang R, Bhat IB, Paul Chow T. Epitaxial growth of n-type SiC using phosphine and nitrogen as the precursors Journal of Applied Physics. 92: 7587-7592. DOI: 10.1063/1.1516257 |
0.61 |
|
| 2001 |
Cui H, Bhat I, O'Quinn B, Venkatasubramanian R. In-situ monitoring of the growth of Bi 2 Te 3 and Sb 2 Te 3 films and Bi 2 Te 3 -Sb 2 Te 3 superlattice using spectroscopic ellipsometry Journal of Electronic Materials. 30: 1376-1381. DOI: 10.1007/S11664-001-0186-9 |
0.452 |
|
| 2001 |
Zhang R, Bhat I. Atomic force microscopy studies of CdTe films grown by epitaxial lateral overgrowth Journal of Electronic Materials. 30: 1370-1375. DOI: 10.1007/S11664-001-0185-X |
0.524 |
|
| 2000 |
Schowalter LJ, Rojo JC, Yakolev N, Shusterman Y, Dovidenko K, Wang R, Bhat I, Slack GA. Preparation and characterization of single-crystal aluminum nitride substrates Materials Research Society Symposium - Proceedings. 595: W671-W676. DOI: 10.1557/S1092578300004622 |
0.331 |
|
| 2000 |
Wang R, Bhat I, Chow P. A New Sublimation Etching for Reproducible Growth of Epitaxial Layers of SiC on SiC Substrate in a CVD Reactor Mrs Proceedings. 640. DOI: 10.1557/Proc-640-H2.6 |
0.646 |
|
| 2000 |
Cui H, Bhat IB, Murarka SP, Lu H, Li W, Hsia WJ, Catabay W. Chemical mechanical polishing of low dielectric constant oxide films deposited using flowfill chemical vapor deposition technology Journal of the Electrochemical Society. 147: 3808-3815. DOI: 10.1149/1.1393978 |
0.457 |
|
| 2000 |
Cui H, Bhat IB, Murarka SP, Lu H, Li W, Hsia WJ, Catabay W. Chemical mechanical polishing of low dielectric constant oxide films deposited using flowfill chemical vapor deposition technology Journal of the Electrochemical Society. 147: 3808-3815. DOI: 10.1149/1.1393978 |
0.353 |
|
| 2000 |
Schowalter LJ, Rojo JC, Slack GA, Shusterman Y, Wang R, Bhat I, Arunmozhi G. Epitaxial growth of AlN and Al0.5Ga0.5N layers on aluminum nitride substrates Journal of Crystal Growth. 211: 78-81. DOI: 10.1016/S0022-0248(99)00778-2 |
0.448 |
|
| 2000 |
Zhang R, Bhat I. Selective growth of CdTe on Si and GaAs substrates using metalorganic vapor phase epitaxy Journal of Electronic Materials. 29: 765-769. DOI: 10.1007/S11664-000-0222-1 |
0.469 |
|
| 1999 |
Schowalter LJ, Shusterman Y, Wang R, Bhat I, Aninmozhi G, Slack OA. Epitaxial growth of hi-nitride layers on aluminum nitride substrates Materials Research Society Symposium - Proceedings. 537: G3.76. DOI: 10.1557/S1092578300002817 |
0.483 |
|
| 1999 |
Hitchcock CW, Gutmann RJ, Borrego JM, Bhat IB, Charache GW. Antimonide-based devices for thermophotovoltaic applications Ieee Transactions On Electron Devices. 46: 2154-2161. DOI: 10.1109/16.792011 |
0.395 |
|
| 1999 |
Ehsani H, Bhat I, Gutmann RJ, Charache G, Freeman M. Role of relative tilt on the structural properties of GaInSb epitaxial layers grown on (001) GaSb substrates Journal of Applied Physics. 86: 835-840. DOI: 10.1063/1.370811 |
0.451 |
|
| 1999 |
Cui H, Bhat IB, Venkatasubramanian R. Optical constants of Bi 2 Te 3 and Sb 2 Te 3 measured using spectroscopic ellipsometry Journal of Electronic Materials. 28: 1111-1114. DOI: 10.1007/S11664-999-0247-Z |
0.374 |
|
| 1999 |
Dakshinamurthy S, Shetty S, Bhat I, Hitchcock C, Gutmann R, Charache G, Freeman M. Fabrication and characterization of GaSb based thermophotovoltaic cells using Zn diffusion from a doped spin-on glass source Journal of Electronic Materials. 28: 355-359. DOI: 10.1007/S11664-999-0232-6 |
0.366 |
|
| 1999 |
Cui H, Bhat IB, Venkatasubramanian R. Optical properties of Bi2Te3 and Sb2Te3 grown by metalorganic vapor phase epitaxy International Conference On Thermoelectrics, Ict, Proceedings. 683-686. |
0.301 |
|
| 1998 |
Fedison JB, Chow TP, Lu H, Bhat I. Electrical Characteristics of In Situ Grown Lateral P +N GaN Junction Diodes on Sapphire Substrates Materials Science Forum. 1415-1420. DOI: 10.4028/Www.Scientific.Net/Msf.264-268.1415 |
0.388 |
|
| 1998 |
Fedison JB, Chow TP, Lu H, Bhat IB. Electrical characteristics of magnesium-doped gallium nitride junction diodes Applied Physics Letters. 72: 2841-2843. DOI: 10.1063/1.121475 |
0.34 |
|
| 1998 |
Ehsani H, Bhat I, Hitchcock C, Gutmann RJ, Charache G, Freeman M. p-Type and n-type doping in GaSb and Ga0.8In0.2Sb layers grown by metalorganic vapor phase epitaxy Journal of Crystal Growth. 195: 385-390. DOI: 10.1016/S0022-0248(98)00710-6 |
0.332 |
|
| 1998 |
Hitchcock CW, Gutmann RJ, Ehsani H, Bhat IB, Wang CA, Freeman MJ, Charache GW. Ternary and quaternary antimonide devices for thermophotovoltaic applications Journal of Crystal Growth. 195: 363-372. DOI: 10.1016/S0022-0248(98)00595-8 |
0.429 |
|
| 1998 |
Dakshinamurthy S, Bhat I. Monitoring of CdTe atomic layer epitaxy using in-situ spectroscopic ellipsometry Journal of Electronic Materials. 27: 521-526. DOI: 10.1007/S11664-998-0008-4 |
0.436 |
|
| 1997 |
Lu H, Bhat IB, Lee B, Slack GA, Schowalter LJ. MOCVD Growth of GaN on bulk AlN Substrates Mrs Proceedings. 482: 277. DOI: 10.1557/Proc-482-277 |
0.529 |
|
| 1997 |
Lu H, Wu Z, Bhat I. Photoassisted Anodic Etching of Gallium Nitride Journal of the Electrochemical Society. 144. DOI: 10.1149/1.1837355 |
0.363 |
|
| 1997 |
Charache GW, Akram S, Maby EW, Bhat IB. Surface passivation of GaAs MESFET's Ieee Transactions On Electron Devices. 44: 1837-1842. DOI: 10.1109/16.641350 |
0.478 |
|
| 1997 |
Ehsani H, Bhat I, Borrego J, Gutmann R, Brown E, Dziendziel R, Freeman M, Choudhury N. Optical properties of degenerately doped silicon films for applications in thermophotovoltaic systems Journal of Applied Physics. 81: 432-439. DOI: 10.1063/1.364076 |
0.373 |
|
| 1997 |
Dakshina Murthy S, Bhat IB. In situ monitoring of CdTe nucleation on GaAs (100) using spectroscopic ellipsometry Journal of Crystal Growth. 170: 193-197. DOI: 10.1016/S0022-0248(96)00610-0 |
0.446 |
|
| 1996 |
Lu H, Wu Z, Bhat I. Photo-Assisted Anodic Etching of Gallium Nitride Grown by MOCVD Mrs Proceedings. 449. DOI: 10.1557/Proc-449-1035 |
0.455 |
|
| 1996 |
Lu H, Thothathiri M, Wu Z, Bhat I. Monitoring of indium x-ray peak to optimize In x Ga 1-x N layer grown by metalorganic chemical vapor deposition Mrs Proceedings. 449: 1005. DOI: 10.1557/Proc-449-1005 |
0.352 |
|
| 1996 |
Ehsani H, Bhat I, Gutmann R, Charache G. p‐type GaSb and Ga0.8In0.2Sb layers grown by metalorganic vapor phase epitaxy using silane as the dopant source Applied Physics Letters. 69: 3863-3865. DOI: 10.1063/1.117130 |
0.444 |
|
| 1995 |
Lu H, Bhat I. Magnesium Doping of GaN by Metalorganic Chemical Vapor Deposition Mrs Proceedings. 395: 497. DOI: 10.1557/Proc-395-497 |
0.435 |
|
| 1995 |
Huang JW, Kuech TF, Lu H, Bhat I. Electrical characterization of Mg-doped GaN grown by metalorganic vapor phase epitaxy Applied Physics Letters. 2392. DOI: 10.1063/1.116144 |
0.312 |
|
| 1995 |
Reine MB, Norton PW, Starr R, Weiler MH, Kestigian M, Musicant BL, Mitra P, Schimert T, Case FC, Bhat IB, Ehsani H, Rao V. Independently accessed back-to-back HgCdTe photodiodes: a new dual-band infrared detector Journal of Electronic Materials. 24: 669-679. DOI: 10.1007/Bf02657977 |
0.373 |
|
| 1995 |
Wang W, Bhat I. Growth of high quality CdTe and ZnTe on Si substrates using organometallic vapor phase epitaxy Journal of Electronic Materials. 24: 451-455. DOI: 10.1007/Bf02657947 |
0.498 |
|
| 1995 |
Murthy SD, Bhat IB, Johs B, Pittal S, He P. Application of spectroscopic ellipsometry for real-time control of CdTe and HgCdTe growth in an OMCVD system Journal of Electronic Materials. 24: 445-449. DOI: 10.1007/Bf02657946 |
0.397 |
|
| 1995 |
Rao V, Ehsani H, Bhat IB, Kestigian M, Starr R, Weiler MH, Reine MB. Metalorganic vapor phase epitaxy in-situ growth of p-on-n and n-on-p Hg1-xCdxTe junction photodiodes using tertiarybutylarsine as the acceptor source Journal of Electronic Materials. 24: 437-443. DOI: 10.1007/Bf02657945 |
0.445 |
|
| 1995 |
Murthy SD, Bhat I, Johs B, Pittal S, He P. Real-time control of HgCdTe growth by organometallic vapor phase epitaxy using spectroscopic ellipsometry Journal of Electronic Materials. 24: 1087-1091. DOI: 10.1007/Bf02653057 |
0.365 |
|
| 1995 |
Wang WS, Bhat IB. Studies on the growth of CdTe on Si using ge interfacial layer in an organometallic vapor phase epitaxial system Journal of Electronic Materials. 24: 1047-1051. DOI: 10.1007/Bf02653051 |
0.456 |
|
| 1994 |
Bhat I, Wang W. Growth of (100) oriented CdTe on Si using Ge as a buffer layer Applied Physics Letters. 64: 566-568. DOI: 10.1063/1.111105 |
0.477 |
|
| 1994 |
Bhat I, Akram S. Atomic layer epitaxial growth studies of ZnSe using dimethylzinc and hydrogen selenide Journal of Crystal Growth. 138: 127-130. DOI: 10.1016/0022-0248(94)90792-7 |
0.455 |
|
| 1994 |
Akram S, Bhat I. Organometallic vapor phase epitaxial growth of p-type ZnSe using phenylhydrazine as the dopant source Journal of Crystal Growth. 138: 105-109. DOI: 10.1016/0022-0248(94)90788-9 |
0.447 |
|
| 1994 |
Wang W, Bhat I. Use of germanium interfacial layer for the hetero-epitaxial growth of CdTe on Si substrates Journal of Crystal Growth. 138: 43-47. DOI: 10.1016/0022-0248(94)90777-3 |
0.489 |
|
| 1994 |
Akram S, Bhat IB, Melas AA. Nitrogen doping of ZnSe by OMVPE using a novel organometallic precursor Journal of Electronic Materials. 23: 259-262. DOI: 10.1007/Bf02670633 |
0.443 |
|
| 1993 |
Bhat I. Growth of CDTE on GaAs and Si Substrates by Organometallic Vapor Phase Epitaxy Mrs Proceedings. 318: 213. DOI: 10.1557/Proc-318-213 |
0.505 |
|
| 1993 |
Han KJ, Abbate A, Bhat IB, Akram S, Das P. Investigation of the role of ZnSe films on GaAs using acoustoelectric voltage spectroscopy Journal of Applied Physics. 74: 364-369. DOI: 10.1063/1.354118 |
0.389 |
|
| 1993 |
Johs B, Doerr D, Pittal S, Woollan JA, Bhat I, Dakshinamurthy S. Hardware and software for in-situ process monitor and control using multiple wavelength ellipsometry Surface & Coatings Technology. 62: 680-682. DOI: 10.1016/0257-8972(93)90318-I |
0.337 |
|
| 1993 |
Karam NH, Wolfson RG, Bhat IB, Ehsani H, Ghandhi SK. Growth and characterization of CdTe, HgTe and HgCdTe by atomic layer epitaxy Thin Solid Films. 225: 261-264. DOI: 10.1016/0040-6090(93)90166-M |
0.451 |
|
| 1993 |
Johs B, Doerr D, Pittal S, Bhat IB, Dakshinamurthy S. Real-time monitoring and control during MOVPE growth of CdTe using multiwavelength ellipsometry Thin Solid Films. 233: 293-296. DOI: 10.1016/0040-6090(93)90111-2 |
0.451 |
|
| 1993 |
Wang W, Ehsani H, Bhat I. Improved CdTe layers on GaAs and Si using atomic layer epitaxy Journal of Electronic Materials. 22: 873-878. DOI: 10.1007/Bf02817500 |
0.475 |
|
| 1993 |
Akram S, Bhat I. Methods for reducing deep level emissions from ZnSe grown by organometallic vapor phase epitaxy Journal of Electronic Materials. 22: 515-519. DOI: 10.1007/Bf02661624 |
0.37 |
|
| 1992 |
Bhat IB, Ehsani H, Wang WS, Ghandhi SK, Karam NH. Low temperature epitaxy of HgTe, CdTe, and HgCdTe using flow modulation techniques Journal of Vacuum Science & Technology B. 10: 1376-1379. DOI: 10.1116/1.585871 |
0.388 |
|
| 1992 |
Bhat IB. Recent advances in the organometallic vapor phase epitaxial growth of HgCdTe by the direct alloy growth process Journal of Crystal Growth. 117: 1-9. DOI: 10.1016/0022-0248(92)90706-O |
0.424 |
|
| 1992 |
Wang WS, Ehsani HE, Bhat IB. Atomic layer epitaxy of CdTe on GaAs, by organometallic vapor phase epitaxy Journal of Crystal Growth. 124: 670-675. DOI: 10.1016/0022-0248(92)90534-P |
0.469 |
|
| 1992 |
Akram S, Ehsani H, Bhat IB. The effect of GaAs surface stabilization on the properties of ZnSe grown by organometallic vapor phase epitaxy Journal of Crystal Growth. 124: 628-632. DOI: 10.1016/0022-0248(92)90528-Q |
0.44 |
|
| 1991 |
Parat KK, Ehsani H, Bhat IB, Ghandhi SK. Selective annealing for the planar processing of HgCdTe devices Journal of Vacuum Science & Technology B. 9: 1625-1629. DOI: 10.1116/1.585434 |
0.46 |
|
| 1991 |
Taskar NR, Bhat IB, Parat KK, Ghandhi SK, Scilla GJ. Extrinsic p‐doped HgCdTe grown by direct alloy growth organometallic epitaxy Journal of Vacuum Science & Technology B. 9: 1705-1708. DOI: 10.1116/1.585403 |
0.43 |
|
| 1991 |
Bhat IB, Parat KK, Ehsani H, Ghandhi SK. N-channel enhancement mode field-effect transistors in Hg 1-xCdxTe grown by organometallic epitaxy (direct alloy growth process) Applied Physics Letters. 59: 1575-1577. DOI: 10.1063/1.106288 |
0.43 |
|
| 1991 |
Ghandhi SK, Parat KK, Ehsani H, Bhat IB. High quality planar HgCdTe photodiodes fabricated by the organometallic epitaxy (direct alloy growth process) Applied Physics Letters. 58: 828-830. DOI: 10.1063/1.104502 |
0.452 |
|
| 1991 |
Taskar NR, Bhat IB, Parat KK, Ghandhi SK, Scilla GJ. The mercury pressure dependence of arsenic doping in HgCdTe, grown by organometallic epitaxy (direct alloy growth process) Journal of Crystal Growth. 110: 692-696. DOI: 10.1016/0022-0248(91)90625-F |
0.359 |
|
| 1990 |
Taskar NR, Parat KK, Bhat IB, Chandhi SK. Organometallic Epitaxy of Extrinsic N-Type HgCdTe Using Trimethylindium Mrs Proceedings. 216. DOI: 10.1557/Proc-216-29 |
0.301 |
|
| 1990 |
Bhat IB, Ehsani H, Ghandhi SK. The growth and characterization of HgTe and HgCdTe using methylalyiltelluride Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 8: 1054-1058. DOI: 10.1116/1.576961 |
0.484 |
|
| 1990 |
Ghandhi SK, Taskar NR, Parat KK, Bhat IB. Indium doping of n-type HgCdTe layers grown by organometallic vapor phase epitaxy Applied Physics Letters. 57: 252-254. DOI: 10.1063/1.103706 |
0.427 |
|
| 1990 |
Taskar NR, Natarajan V, Bhat IB, Grandhi SK. Extrinsic doped n- and p-type CdTe layers grown by organometallic vapor phase epitaxy Journal of Crystal Growth. 86: 228-232. DOI: 10.1016/0022-0248(90)90721-V |
0.463 |
|
| 1990 |
Parat KK, Taskar NR, Bhat IB, Ghandhi SK. The influence of accumulation on the hall-effect in n-type Hg1-xCdxTe Journal of Crystal Growth. 102: 413-418. DOI: 10.1016/0022-0248(90)90399-6 |
0.4 |
|
| 1990 |
Parat KK, Taskar NR, Bhat IB, Ghandhi SK. Annealing and electrical properties of Hg1-xCdxTe grown by OMVPE Journal of Crystal Growth. 106: 513-523. DOI: 10.1016/0022-0248(90)90024-F |
0.444 |
|
| 1989 |
Parat KK, Taskar NR, Bhat IB, Ghandhi SK. The Effect of Surface Layers in Epitaxial N-Type Hg 1−x Cd x Te Mrs Proceedings. 161. DOI: 10.1557/Proc-161-271 |
0.372 |
|
| 1989 |
Bhat IB, Ehsani H, Ghandhi SK. Organometallic vapor phase epitaxial growth of HgTe and HgCdTe using methylallyltelluride Proceedings of Spie - the International Society For Optical Engineering. 1106: 32-39. DOI: 10.1117/12.960626 |
0.37 |
|
| 1989 |
Taskar NR, Bhat IB, Parat KK, Terry D, Ehsani H, Ghandhi SK. The organometallic epitaxy of extrinsic p‐doped HgCdTe Journal of Vacuum Science and Technology. 7: 281-284. DOI: 10.1116/1.576112 |
0.461 |
|
| 1989 |
Ghandhi SK, Bhat IB, Ehsani H, Nucciarone D, Miller G. Low-temperature growth of HgTe and HgCdTe using methylallyltelluride Applied Physics Letters. 55: 137-139. DOI: 10.1063/1.102124 |
0.465 |
|
| 1988 |
Bhat IB, Fardi H, Ghandhi SK, Johnson CJ. Highly uniform, large-area HgCdTe layers on CdTe and CdTeSe substrates Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 6: 2800-2803. DOI: 10.1116/1.575510 |
0.477 |
|
| 1988 |
Ghandhi SK, Taskar NR, Parat KK, Terry D, Bhat IB. Extrinsic p-type doping of HgCdTe grown by organometallic epitaxy Applied Physics Letters. 53: 1641-1643. DOI: 10.1063/1.99936 |
0.416 |
|
| 1988 |
Ghandhi SK, Bhat IB, Fardi H. Organometallic epitaxy of HgCdTe on CdTeSe substrates with high compositional uniformity Applied Physics Letters. 52: 392-394. DOI: 10.1063/1.99476 |
0.492 |
|
| 1988 |
Bhat IB, Patel K, Taskar NR, Ayers JE, Ghandhi SK. X-ray diffraction studies of CdTe grown on InSb Journal of Crystal Growth. 88: 23-29. DOI: 10.1016/S0022-0248(98)90004-5 |
0.447 |
|
| 1988 |
Natarajan V, Taskar NR, Bhat IB, Ghandhi SK. Growth and properties of Hg1-xCdxTe on GaAs, with x - 0.27 Journal of Electronic Materials. 17: 479-483. DOI: 10.1007/Bf02652097 |
0.498 |
|
| 1987 |
Bhat IB, Taskar NR, Ayers J, Patel K, Ghandhi SK. CdTe FILMS GROWN ON InSb SUBSTRATES BY ORGANOMETALLIC EPITAXY Materials Research Society Symposia Proceedings. 90: 471-477. DOI: 10.1557/Proc-90-471 |
0.512 |
|
| 1987 |
Bhat IB, Taskar NR, Ghandhi SK. On the Mechanism of Growth of CdTe by Organometallic Vapor-Phase Epitaxy Journal of the Electrochemical Society. 134: 195-198. DOI: 10.1149/1.2100404 |
0.373 |
|
| 1987 |
Bhat IB, Taskar NR, Patel K, Ayers JE, Ghandhi SK, Petruzzello J, Olego D. Characteristics of omvpe-grown CdTe and HgCdTe on gaas Proceedings of Spie - the International Society For Optical Engineering. 796: 194-198. DOI: 10.1117/12.941017 |
0.348 |
|
| 1987 |
Olego DJ, Petruzzello J, Ghandhi SK, Taskar NR, Bhat IB. Elastic strains in CdTe-GaAs heterostructures grown by metalorganic chemical vapor deposition Applied Physics Letters. 51: 127-129. DOI: 10.1063/1.98590 |
0.398 |
|
| 1987 |
Ghandhi SK, Taskar NR, Bhat IB. Arsenic-doped p-CdTe layers grown by organometallic vapor phase epitaxy Applied Physics Letters. 50: 900-902. DOI: 10.1063/1.98027 |
0.431 |
|
| 1987 |
Petruzzello J, Olego D, Ghandhi SK, Taskar NR, Bhat I. Transmission electron microscopy of (001) CdTe on (001) GaAs grown by metalorganic chemical vapor deposition Applied Physics Letters. 50: 1423-1425. DOI: 10.1063/1.97842 |
0.459 |
|
| 1986 |
Bhat IB, Taskar NR, Ghandhi SK. The organometallic heteroepitaxy of cdte and hgcdte on gaas substrates Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 4: 2230-2233. DOI: 10.1116/1.574060 |
0.53 |
|
| 1986 |
Ghandhi SK, Taskar NR, Bhat IB. Effect of process conditions on the quality of CdTe grown on InSb by organometallic epitaxy Applied Physics Letters. 49: 1290-1292. DOI: 10.1063/1.97389 |
0.48 |
|
| 1986 |
Ghandhi SK, Bhat IB, Taskar NR. Growth and properties of Hg1-xCdxTe on GaAs substrates by organometallic vapor-phase epitaxy Journal of Applied Physics. 59: 2253-2255. DOI: 10.1063/1.336371 |
0.48 |
|
| 1986 |
Bhat IB, Sundaram LMG, Taskar NR, Borrego JM, Ghandhi SK. CdTe-InSb heterostructures grown by organometallic-vapor-phase epitaxy: Preparation and electrical properties Solid State Electronics. 29: 257-260. DOI: 10.1016/0038-1101(86)90048-1 |
0.485 |
|
| 1986 |
Taskar NR, Bhat IB, Ghandhi SK. MOVPE growth and characteristics of CdTe on InSb substrates Journal of Crystal Growth. 77: 480-484. DOI: 10.1016/0022-0248(86)90340-4 |
0.487 |
|
| 1986 |
Bhat IB, Ghandhi SK. The growth of mercury cadmium telluride by organometallic vapor phase epitaxy Journal of Crystal Growth. 75: 241-246. DOI: 10.1016/0022-0248(86)90033-3 |
0.449 |
|
| 1986 |
Taskar NR, Bhat IB, Borrego JM, Ghandhi SK. OMVPE growth of CdTe on InSb substrates Journal of Electronic Materials. 15: 165-168. DOI: 10.1007/Bf02655331 |
0.458 |
|
| 1986 |
Bhat IB, Ghandhi SK. GROWTH AND CHARACTERIZATION OF Hg//1// minus //xCd//xTe ON CdTe SUBSTRATES, PREPARED BY ORGANOMETALLIC EPITAXY Materials Research Society Symposia Proceedings. 56: 103-108. |
0.347 |
|
| 1985 |
Ghandhi SK, Taskar NR, Bhat IB. Growth of CdTe on GaAs by organometallic vapor phase heteroepitaxy Applied Physics Letters. 47: 742-745. DOI: 10.1063/1.96024 |
0.49 |
|
| 1984 |
Ghandhi SK, Bhat I. High quality Hg1−xCdxTe epitaxial layers by the organometallic process Applied Physics Letters. 44: 779-781. DOI: 10.1063/1.94916 |
0.446 |
|
| 1984 |
Bhat I, Bhat KN, Mathur G, Borrego JM, Ghandhi SK. Diffused junction p+-n solar cells in bulk GaAs-I. Fabrication and cell performance Solid State Electronics. 27: 121-125. DOI: 10.1016/0038-1101(84)90102-3 |
0.318 |
|
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