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Bruno Ullrich - Publications

Affiliations: 
2000-2010 Physics and Astronomy Bowling Green State University, Bowling Green, OH, United States 
Area:
Condensed Matter Physics, Physical Chemistry, Optics Physics
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124 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2023 Bhowmick M, Ullrich B, Murchland M, Zhou X, Ramkumar C. Substrate and Excitation Intensity Dependence of Saturable Absorption in Perovskite Quantum Dot Films. Nanomaterials (Basel, Switzerland). 13. PMID 36903749 DOI: 10.3390/nano13050871  0.79
2022 Bhowmick M, Xi H, Ullrich B. Microscopic description and uncertainty of the Stokes shift in semiconductors. Optics Letters. 47: 1953-1955. PMID 35427309 DOI: 10.1364/OL.456257  0.732
2021 Bhowmick M, Xi H, Ullrich B. Optical Bandgap Definition via a Modified Form of Urbach's Rule. Materials (Basel, Switzerland). 14. PMID 33801574 DOI: 10.3390/ma14071639  0.744
2020 Ullrich B, Xi H, Bhowmick M. Correction of the Fan factor Aip Advances. 10: 35014. DOI: 10.1063/5.0004630  0.724
2019 Bhowmick M, Xi H, Androulidaki M, Ullrich B. Mathematical assessment of the thermal band gap variation of semiconductors Physica Scripta. 94: 85701. DOI: 10.1088/1402-4896/Ab0230  0.727
2018 Bhowmick M, Ullrich B, Androulidaki M, Xi H. The thermo-electric nature of the Debye temperature Aip Advances. 8: 55318. DOI: 10.1063/1.5004704  0.729
2017 Ullrich B, Bhowmick M, Xi H. Erratum: “Relation between Debye temperature and energy band gap of semiconductors” [AIP Adv. 7, 045109 (2017)] Aip Advances. 7: 109902. DOI: 10.1063/1.5007149  0.733
2017 Ullrich B, Bhowmick M, Xi H. Relation between Debye temperature and energy band gap of semiconductors Aip Advances. 7: 45109. DOI: 10.1063/1.4980142  0.749
2016 Ullrich B, Duckworth RM, Singh AK, Barik P, Mejía-Villanueva VO, Garcia-Pérez AC. Optical properties of a scorpion (Centruroides limpidus) Physica Scripta. 91. DOI: 10.1088/0031-8949/91/4/045802  0.431
2016 Ullrich B, Xi H, Wang JS. Photoluminescence limiting of colloidal PbS quantum dots Applied Physics Letters. 108. DOI: 10.1063/1.4942608  0.4
2016 Wang JS, Ullrich B, Das A, Wai CM, Brown GJ, Dass CK, Hendrickson JR. Luminescence studies for energy transfer of lead sulfide QD films Rsc Advances. 6: 48651-48660. DOI: 10.1039/C6Ra03632E  0.412
2015 Shahi PK, Singh AK, Singh SK, Rai SB, Ullrich B. Revelation of the Technological Versatility of the Eu(TTA)3Phen Complex by Demonstrating Energy Harvesting, Ultraviolet Light Detection, Temperature Sensing, and Laser Applications. Acs Applied Materials & Interfaces. PMID 26238311 DOI: 10.1021/Acsami.5B06350  0.358
2015 Ullrich B, Singh AK, Barik P, Xi H, Bhowmick M. Inherent photoluminescence Stokes shift in GaAs. Optics Letters. 40: 2580-3. PMID 26030562 DOI: 10.1364/Ol.40.002580  0.77
2015 Ullrich B, Barik P, Singh AK, García-Ramírez EV, Reyes-Esqueda JA. Photo-dynamic Burstein-Moss doping of PbS quantum dots in solution by single and twophoton optical pumping Optical Materials Express. 5: 2431-2436. DOI: 10.1364/Ome.5.002431  0.462
2015 Barik P, Singh AK, Ullrich B. Magneto-optical reflectance and absorbance of PbS quantum dots Physica Scripta. 90. DOI: 10.1088/0031-8949/90/9/095501  0.349
2015 Yue F, Tomm JW, Kruschke D, Ullrich B, Chu J. Temperature dependence of the fundamental excitonic resonance in lead-salt quantum dots Applied Physics Letters. 107. DOI: 10.1063/1.4926806  0.324
2015 Singh AK, Shahi PK, Rai SB, Ullrich B. Host matrix impact on Er3+ upconversion emission and its temperature dependence Rsc Advances. 5: 16067-16073. DOI: 10.1039/C4Ra12637H  0.33
2015 Shahi PK, Singh AK, Rai SB, Ullrich B. Lanthanide complexes for temperature sensing, UV light detection, and laser applications Sensors and Actuators, a: Physical. 222: 255-261. DOI: 10.1016/J.Sna.2014.12.021  0.429
2014 Ullrich B, Antillón A, Bhowmick M, Wang JS, Xi H. Atomic transition region at the crossover between quantum dots to molecules Physica Scripta. 89. DOI: 10.1088/0031-8949/89/02/025801  0.731
2014 Singh AK, Barik P, Ullrich B. Magneto-optical controlled transmittance alteration of PbS quantum dots by moderately applied magnetic fields at room temperature Applied Physics Letters. 105. DOI: 10.1063/1.4904810  0.33
2014 Ullrich B, Singh AK, Bhowmick M, Barik P, Ariza-Flores D, Xi H, Tomm JW. Photoluminescence lineshape of ZnO Aip Advances. 4. DOI: 10.1063/1.4897383  0.753
2014 Ullrich B, Xi H, Wang JS. Photoinduced band filling in strongly confined colloidal PbS quantum dots Journal of Applied Physics. 115. DOI: 10.1063/1.4883761  0.387
2014 Ullrich B, Ariza-Flores D, Bhowmick M. Intrinsic photoluminescence Stokes shift in semiconductors demonstrated by thin-film CdS formed with pulsed-laser deposition Thin Solid Films. 558: 24-26. DOI: 10.1016/J.Tsf.2014.02.047  0.814
2014 Markelonis AR, Wang JS, Ullrich B, Wai CM, Brown GJ. Nanoparticle film deposition using a simple and fast centrifuge sedimentation method Applied Nanoscience. 5: 457-468. DOI: 10.1007/S13204-014-0338-X  0.366
2013 Ullrich B, Xi H. Photocurrent limit in nanowires. Optics Letters. 38: 4698-700. PMID 24322109 DOI: 10.1364/Ol.38.004698  0.309
2013 Wang JS, Steenbergen EH, Smith HE, Grazulis L, Massengale JA, Ullrich B, Brown GJ. Stability studies of lead sulfide colloidal quantum dot films on glass and GaAs substrates Proceedings of Spie - the International Society For Optical Engineering. 8634. DOI: 10.1117/12.2002499  0.462
2013 Wang JS, Ullrich B, Brown GJ, Wai CM. Morphology and energy transfer in PbS quantum dot arrays formed with supercritical fluid deposition Materials Chemistry and Physics. 141: 195-202. DOI: 10.1016/J.Matchemphys.2013.05.003  0.384
2013 Ullrich B, Wang JS. Impact of laser excitation variations on the photoluminescence of PbS quantum dots on GaAs Journal of Luminescence. 143: 645-648. DOI: 10.1016/j.jlumin.2013.05.028  0.32
2012 Ullrich B, Markelonis AR, Wang JS, Brown GJ. Emission of precipitation deposited PbS quantum dots on polyethylene terephthalate Materials Research Society Symposium Proceedings. 1436: 63-68. DOI: 10.1557/Opl.2013.1096  0.353
2012 Wang JS, Ullrich B, Brown GJ. PbS nanoparticles: Synthesis, supercritical fluid deposition, and optical studies Materials Research Society Symposium Proceedings. 1449: 81-86. DOI: 10.1557/Opl.2012.792  0.422
2012 Ullrich B, Wang JS, Xiao XY, Brown GJ. Fourier spectroscopy on PbS quantum dots Proceedings of Spie - the International Society For Optical Engineering. 8271. DOI: 10.1117/12.905980  0.332
2012 Steenbergen EH, Nunna K, Ouyang L, Ullrich B, Huffaker DL, Smith DJ, Zhang YH. Strain-balanced InAs/InAs1-xSbx type-II superlattices grown by molecular beam epitaxy on GaSb substrates Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 30. DOI: 10.1116/1.3672028  0.314
2012 Ullrich B, Brown GJ, Xi H. Semiconductor band gap localization via Gaussian function Semiconductor Science and Technology. 27. DOI: 10.1088/0268-1242/27/10/105016  0.364
2011 Wang JS, Ullrich B, Brown GJ. Lead sulfide quantum dot synthesis, deposition, and temperature dependence studies of the Stokes shift Materials Research Society Symposium Proceedings. 1409: 49-54. DOI: 10.1557/Opl.2012.755  0.354
2011 Ullrich B, Brown GJ. Doping of GaAs by laser ablated ZnTe Applied Physics Letters. 99. DOI: 10.1063/1.3630033  0.379
2010 Ullrich B, Xi H. Photocurrent theory based on coordinate dependent lifetime. Optics Letters. 35: 3910-2. PMID 21124562 DOI: 10.1364/Ol.35.003910  0.321
2010 Brown GJ, Elhamri S, Smith HE, Mahalingam K, Haugan HJ, Pacley S, Ullrich B, Szmulowicz F. Type-II superlattice materials research at the Air Force Research Laboratory Proceedings of Spie - the International Society For Optical Engineering. 7660. DOI: 10.1117/12.853630  0.34
2010 Haugan HJ, Ullrich B, Grazulis L, Elhamri S, Brown GJ, Mitchel WC. Optical and electrical quality improvements of undoped InAs/GaSb superlattices Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 28. DOI: 10.1116/1.3273940  0.368
2010 Acharya KP, Khatri H, Marsillac S, Ullrich B, Anzenbacher P, Zamkov M. Pulsed laser deposition of graphite counter electrodes for dye-sensitized solar cells Applied Physics Letters. 97. DOI: 10.1063/1.3518481  0.653
2010 Haugan HJ, Ullrich B, Elhamri S, Szmulowicz F, Brown GJ, Tung LC, Wang YJ. Magneto-optics of InAs/GaSb superlattices Journal of Applied Physics. 107. DOI: 10.1063/1.3391976  0.334
2010 Acharya KP, Hewa-Kasakarage NN, Alabi TR, Nemitz I, Khon E, Ullrich B, Anzenbacher P, Zamkov M. Synthesis of PbS/TiO2 colloidal heterostructures for photovoltaic applications Journal of Physical Chemistry C. 114: 12496-12504. DOI: 10.1021/Jp104197S  0.623
2010 Acharya KP, Mahalingam K, Ullrich B. Structural, compositional, and optoelectronic properties of thin-film CdS on p-GaAs prepared by pulsed-laser deposition Thin Solid Films. 518: 1784-1787. DOI: 10.1016/J.Tsf.2009.09.032  0.722
2009 Liyanage C, Acharya K, Ullrich B. Photonic digitizing and pattern alteration with flexible CdS and GaAs film surfaces Journal of the Optical Society of America B: Optical Physics. 26: 254-258. DOI: 10.1364/Josab.26.000254  0.703
2009 Acharya KP, Khatri H, Ullrich B. Physical characterization of n-GaAs on p-Si formed by low-temperature pulsed-laser deposition Journal of Applied Physics. 105. DOI: 10.1063/1.3132819  0.726
2009 Acharya KP, Erlacher A, Ullrich B. Responsivity properties of ZnTe/GaAs heterostructures formed with pulsed-laser deposition Solar Energy Materials and Solar Cells. 93: 25-27. DOI: 10.1016/J.Solmat.2008.02.024  0.799
2009 Ullrich B, Brown GJ. Room temperature photoluminescence of amorphous GaAs Materials Letters. 63: 2489-2491. DOI: 10.1016/j.matlet.2009.08.047  0.419
2009 Haugan HJ, Elhamri S, Ullrich B, Szmulowicz F, Brown GJ, Mitchel WC. Optimizing residual carriers in undoped InAs/GaSb superlattices for high operating temperature mid-infrared detectors Journal of Crystal Growth. 311: 1897-1900. DOI: 10.1016/J.Jcrysgro.2008.09.141  0.353
2008 Acharya KP, Ullrich B. Responsivity modulation of thin-film CdS by means of lock-in technique Proceedings of Spie - the International Society For Optical Engineering. 6890. DOI: 10.1117/12.761852  0.675
2008 Ullrich B, Erlacher A, Smith HE, Mitchel WC, Brown GJ. Electronic properties of p-GaAs deposited on n-Si with pulsed-laser deposition Journal of Physics Condensed Matter. 20. DOI: 10.1088/0953-8984/20/17/175217  0.771
2008 Haugan HJ, Elhamri S, Szmulowicz F, Ullrich B, Brown GJ, Mitchel WC. Study of residual background carriers in midinfrared InAsGaSb superlattices for unfcooled detector operation Applied Physics Letters. 92. DOI: 10.1063/1.2884264  0.322
2007 Acharya KP, Skuza JR, Lukaszew RA, Liyanage C, Ullrich B. CdS thin films formed on flexible plastic substrates by pulsed-laser deposition Journal of Physics Condensed Matter. 19. DOI: 10.1088/0953-8984/19/19/196221  0.724
2007 Ullrich B, Munshi SR, Brown GJ. Photoluminescence analysis of p-doped GaAs using the Roosbroeck-Shockley relation Semiconductor Science and Technology. 22: 1174-1177. DOI: 10.1088/0268-1242/22/10/016  0.408
2007 Acharya KP, Ullrich B, Erlacher A. Responsivity of ZnTen-GaAs heterostructures formed by infrared nanosecond laser deposition Journal of Applied Physics. 102. DOI: 10.1063/1.2786890  0.8
2007 Acharya KP, Erlacher A, Ullrich B. Optoelectronic properties of ZnTe/Si heterostructures formed by nanosecond laser deposition at different Nd:YAG laser lines Thin Solid Films. 515: 4066-4069. DOI: 10.1016/J.Tsf.2006.10.135  0.824
2007 Ullrich B. Thin-film CdS formed with pulsed-laser deposition towards optical and hybrid device applications Journal of Materials Science: Materials in Electronics. 18: 1105-1108. DOI: 10.1007/S10854-007-9138-3  0.528
2007 Haugan HJ, Szmulowicz F, Brown GJ, Ullrich B, Munshi SR, Wickett JC, Stokes DW. Short-period InAs/GaSb superlattices for mid-infrared photodetectors Physica Status Solidi (C) Current Topics in Solid State Physics. 4: 1702-1706. DOI: 10.1002/Pssc.200674250  0.364
2006 Erlacher A, Lukaszew AR, Jaeger H, Ullrich B. Surface and texture characterization of thin-film ZnTe formed with pulsed-laser deposition Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 24: 1623-1626. DOI: 10.1116/1.2167072  0.791
2006 Erlacher A, Danilov EO, Ullrich B. Introduction of glass/GaAs interfaces for all-optical and hybrid switch fabrics Semiconductor Science and Technology. 21: 1331-1334. DOI: 10.1088/0268-1242/21/9/019  0.734
2006 Haugan HJ, Mahalingam K, Brown GJ, Mitchel WC, Ullrich B, Grazulis L, Elhamri S, Wickett JC, Stokes DW. Growth of short-period InAs∕GaSb superlattices Journal of Applied Physics. 100: 123110. DOI: 10.1063/1.2401280  0.347
2006 Erlacher A, Lukaszew AR, Jaeger H, Ullrich B. Structural and surface analysis of thin-film ZnTe formed with pulsed-laser deposition Surface Science. 600: 3762-3765. DOI: 10.1016/J.Susc.2006.02.061  0.784
2006 Haugan HJ, Szmulowicz F, Brown GJ, Ullrich B, R Munshi S, Grazulis L, Mahalingam K, Fenstermaker ST. Pushing the envelope to the maximum: Short-period InAs/GaSb type-II superlattices for mid-infrared detectors Physica E: Low-Dimensional Systems and Nanostructures. 32: 289-292. DOI: 10.1016/J.Physe.2005.12.072  0.369
2006 Erlacher A, Ullrich B, Komarova EY, Jaeger H, Haugan HJ, Brown GJ. Texture and surface analysis of thin-film GaAs on glass formed by pulsed-laser deposition Journal of Non-Crystalline Solids. 352: 193-196. DOI: 10.1016/J.Jnoncrysol.2005.10.025  0.768
2005 Szmulowicz F, Haugan HJ, Brown GJ, Mahalingam K, Ullrich B, Munshi SR, Grazulis L. Interfaces as design tools for short-period InAs/GaSb type-II superlattices for mid-infrared detectors Proceedings of Spie - the International Society For Optical Engineering. 5957: 1-12. DOI: 10.2478/S11772-006-0010-4  0.331
2005 Erlacher A, Ambrico M, Perna G, Schiavulli L, Ligonzo T, Jaeger H, Ullrich B. Absorption and photocurrent properties of low-temperature laser deposited thin-film GaAs on glass Proceedings of Spie - the International Society For Optical Engineering. 5850: 1-7. DOI: 10.1117/12.633697  0.77
2005 Erlacher A, Ullrich B. Laser crossing in thin-film GaAs for all-optical computing realizations Proceedings of Spie - the International Society For Optical Engineering. 5907: 1-7. DOI: 10.1117/12.615198  0.772
2005 Erlacher A, Ullrich B, Konopinski RJ, Haugan HJ. Optical gate realization by laser crossing in thin-film semiconductors on glass Proceedings of Spie - the International Society For Optical Engineering. 5723: 179-186. DOI: 10.1117/12.590760  0.758
2005 Ullrich B, Erlacher A. Photosensitive hetero-pairing of p-GaAs/n-Si by pulsed-laser deposition Journal of Physics D: Applied Physics. 38: 4048-4052. DOI: 10.1088/0022-3727/38/22/007  0.745
2005 Haugan HJ, Szmulowicz F, Mahalingam K, Brown GJ, Munshi SR, Ullrich B. Short-period InAsGaSb type-II superlattices for mid-infrared detectors Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2150269  0.316
2005 Ullrich B, Erlacher A. Rectification and intrinsic photocurrent of GaAs/Si photodiodes formed with pulsed-laser deposition at 1064 nm Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2093942  0.756
2005 Khanlary M, Townsend P, Ullrich B, Hole DE. Ion-beam luminescence of thin-film CdS on glass formed by pulsed-laser deposition Journal of Applied Physics. 97. DOI: 10.1063/1.1830085  0.384
2005 Erlacher A, Ambrico M, Perna G, Schiavulli L, Ligonzo T, Jaeger H, Ullrich B. Absorption and photoconductivity properties of ZnTe thin films formed by pulsed-laser deposition on glass Applied Surface Science. 248: 402-405. DOI: 10.1016/J.Apsusc.2005.03.041  0.794
2004 Ullrich B, Erlacher A, Jaeger H. The formation of GaAs/Si photodiodes by pulsed-laser deposition Proceedings of Spie - the International Society For Optical Engineering. 5339: 365-373. DOI: 10.1117/12.528546  0.78
2004 Ullrich B, Erlacher A, Gerasimov TG, Komarova EY, Jaeger H. Optoelectronic multiplexer realization by a GaAs/Si hetero-structure formed by pulsed-laser deposition Proceedings of Spie - the International Society For Optical Engineering. 5359: 23-30. DOI: 10.1117/12.528544  0.762
2004 Erlacher A, Ullrich B. All-optical digitizing of laser transmission through thin-film GaAs on glass Semiconductor Science and Technology. 19. DOI: 10.1088/0268-1242/19/3/L01  0.765
2004 Ullrich B, Erlacher A, Danilov EO. Switch performance and electronic nature of photonic laser digitizing through thin GaAs films on glass Semiconductor Science and Technology. 19. DOI: 10.1088/0268-1242/19/12/L01  0.77
2004 Erlacher A, Ambrico M, Capozzi V, Augelli V, Jaeger H, Ullrich B. X-ray, absorption and photocurrent properties of thin-film GaAs on glass formed by pulsed-laser deposition Semiconductor Science and Technology. 19: 1322-1324. DOI: 10.1088/0268-1242/19/11/019  0.787
2004 Erlacher A, Miller H, Ullrich B. Low-power all-optical switch by superposition of red and green laser irradiation in thin-film cadmium sulfide on glass Journal of Applied Physics. 95: 2927-2929. DOI: 10.1063/1.1644893  0.752
2003 Ullrich B, Erlacher A, Yano S, Schroeder R, Gerasimov TG, Haugan HJ. Preparation of thin film GaAs on glass by pulsed-laser deposition Proceedings of Spie - the International Society For Optical Engineering. 4977: 180-187. DOI: 10.1117/12.472848  0.777
2003 Ullrich B, Schroeder R, Knigge A, Zorn M, Weyers M. In situ analysis of a vertical-cavity surface-emitting laser active layer by two-photon spectroscopy Optical Engineering. 42: 1152-1156. DOI: 10.1117/1.1557173  0.45
2003 Yano S, Schroeder R, Sakai H, Ullrich B. High-electric-field photocurrent in thin-film ZnS formed by pulsed-laser deposition Applied Physics Letters. 82: 2026-2028. DOI: 10.1063/1.1564287  0.515
2003 Ullrich B, Yano S, Schroeder R, Sakai H. Analysis of single- and two-photon-excited green emission spectra of thin-film cadmium sulfide Journal of Applied Physics. 93: 1914-1917. DOI: 10.1063/1.1537459  0.47
2003 Yano S, Ullrich B. Identity of green single- and two-photon excited interband emission in thin film CdS on glass Thin Solid Films. 444: 295-298. DOI: 10.1016/S0040-6090(03)01052-6  0.453
2003 Yano S, Schroeder R, Ullrich B, Sakai H. Absorption and photocurrent properties of thin ZnS films formed by pulsed-laser deposition on quartz Thin Solid Films. 423: 273-276. DOI: 10.1016/S0040-6090(02)01037-4  0.545
2002 Schroeder R, Ullrich B. Optoelectronic junction devices based on organic/inorganic hetero-paired semiconductors Materials Research Society Symposium - Proceedings. 708: 29-32. DOI: 10.1557/Proc-708-Bb3.6  0.424
2002 Schroeder R, Ullrich B. Absorption and subsequent emission saturation of two-photon excited materials: Theory and experiment Optics Letters. 27: 1285-1287. DOI: 10.1364/Ol.27.001285  0.398
2002 Sakai H, Watanabe M, Takiyama K, Ullrich B. Optical properties of ZnxCd1-xS mixed crystal thin film produced by PLD Proceedings of Spie - the International Society For Optical Engineering. 4830: 270-273. DOI: 10.1117/12.486578  0.394
2002 Ullrich B, Schroeder R. Two-photon excited emission probing of thin film CdS formed by various techniques Proceedings of Spie - the International Society For Optical Engineering. 4650: 221-228. DOI: 10.1117/12.467667  0.42
2002 Dushkina NM, Ullrich B. Intensity dependence of two-photon absorption in CdS measured by photoluminescence excited by femtosecond laser pulses Optical Engineering. 41: 2365-2368. DOI: 10.1117/1.1497612  0.405
2002 Schroeder R, Knigge A, Zorn M, Weyers M, Ullrich B. Femtosecond excitation cavity studies and superluminescence by two-photon absorption in vertical cavity lasers at 300 K Physical Review B. 66. DOI: 10.1103/Physrevb.66.245302  0.484
2002 Schroeder R, Ullrich B. Photovoltaic hybrid device with broad tunable spectral response achieved by organic/inorganic thin-film heteropairing Applied Physics Letters. 81: 556-558. DOI: 10.1063/1.1494117  0.305
2002 Ullrich B, Schroeder R, Sakai H, Zhang A, Cheng SZD. Two-photon-excited green emission and its dichroic shift of oriented thin-film CdS on glass formed by laser deposition Applied Physics Letters. 80: 356-358. DOI: 10.1063/1.1432756  0.456
2002 Ullrich B, Schroeder R. Bulk emission and interface probing of thin film CdS by two-photon spectroscopy Chemical Physics. 279: 249-253. DOI: 10.1016/S0301-0104(02)00388-9  0.431
2002 Schroeder R, Knigge A, Zorn M, Weyers M, Ullrich B. Femtosecond excitation cavity studies and superluminescence by two-photon absorption in vertical cavity lasers at 300 K Physical Review B - Condensed Matter and Materials Physics. 66: 2453021-2453026.  0.385
2001 Ullrich B, Schroeder R, Graupner W, Sakai S. The influence of self-absorption on the photoluminescence of thin film CdS demonstrated by two-photon absorption. Optics Express. 9: 116-120. PMID 19421280 DOI: 10.1364/Oe.9.000116  0.525
2001 Ullrich B, Schroeder R. Green single- and two-photon gap emission of thin-film CdS formed by infrared pulsed-laser deposition on glass Ieee Journal of Quantum Electronics. 37: 1363-1367. DOI: 10.1109/3.952549  0.431
2001 Schroeder R, Ullrich B, Graupner W, Scherf U. Excitation density and photoluminescence studies of polyfluorene excited by two-photon absorption Journal of Physics Condensed Matter. 13. DOI: 10.1088/0953-8984/13/16/102  0.414
2001 Ullrich B, Schroeder R. Green emission and bandgap narrowing due to two-photon excitation in thin film CdS formed by spray pyrolysis Semiconductor Science and Technology. 16. DOI: 10.1088/0268-1242/16/8/101  0.422
2001 Ullrich B, Schroeder R, Sakai H. Intrinsic gap emission and its geometry dependence of thin-film CdS excited by two-photon absorption Semiconductor Science and Technology. 16. DOI: 10.1088/0268-1242/16/12/101  0.41
2001 Ullrich B, Sakai H, Segawa Y. Optoelectronic properties of thin film CdS formed by ultraviolet and infrared pulsed-laser deposition Thin Solid Films. 385: 220-224. DOI: 10.1016/S0040-6090(00)01902-7  0.54
2001 Schroeder R, Graupner W, Scherf U, Ullrich B. Two-photon absorption properties of soluble fluorene-based conjugated polymers Materials Research Society Symposium - Proceedings. 660.  0.324
2001 Ullrich B, Schroeder R, Graupner W, Sakai H. The influence of self-absorption on the photoluminescence of thin film CdS demonstrated by two-photon absorption Optics Express. 9: 116-120.  0.442
2000 Dushkina NM, Ullrich B, Sakai H, Segawa Y, Hibino K, Eiju T. Reflection properties of oriented thin CdS films formed by laser ablation Thin Solid Films. 360: 222-228. DOI: 10.1016/S0040-6090(99)00965-7  0.514
2000 Ullrich B, Tomm JW, Dushkina NM, Tomm Y, Sakai H, Segawa Y. Photoelectric dichroism of oriented thin film CdS fabricated by pulsed-laser deposition Solid State Communications. 116: 33-35. DOI: 10.1016/S0038-1098(00)00267-2  0.502
2000 Ullrich B, Bagnall DM, Sakai H, Segawa Y. Photoluminescence and lasing of thin CdS films on glass formed by pulsed-laser-deposition Journal of Luminescence. 87: 1162-1164. DOI: 10.1016/S0022-2313(99)00580-3  0.453
2000 Bagnall DM, Ullrich B, Sakai H, Segawa Y. Micro-cavity lasing of optically excited CdS thin films at room temperature Journal of Crystal Growth. 214: 1015-1018. DOI: 10.1016/S0022-0248(00)00253-0  0.479
2000 Ullrich B, Sakai H. Absorption dichroism of thin CdS films formed by pulsed-laser deposition Ieee International Symposium On Compound Semiconductors, Proceedings. 115-118.  0.438
2000 Tomm JW, Ullrich B, Qiu XG, Segawa Y, Ohtomo A, Kawasaki M, Koinuma H. Optical and photoelectrical properties of oriented ZnO films Journal of Applied Physics. 87: 1844-1848.  0.317
1999 Ullrich B, Bagnall DM, Sakai H, Segawa Y. Photoluminescence properties of thin CdS films on glass formed by laser ablation Solid State Communications. 109: 757-760. DOI: 10.1016/S0038-1098(99)00028-9  0.395
1999 Ullrich B, Bagnall DM, Sakai H, Segawa Y. Room-temperature green luminescence and lasing of thin CdS films on glass formed by pulsed-laser-deposition Pacific Rim Conference On Lasers and Electro-Optics, Cleo - Technical Digest. 3: 902-903.  0.456
1999 Bagnall DM, Ullrich B, Qiu XG, Segawa Y, Sakai H. Microcavity lasing of optically excited cadmium sulfide thin films at room temperature Optics Letters. 24: 1278-1280.  0.45
1999 Dushkina NM, Ullrich B, Sakai H, Eiju T, Segawa Y. Influence of the c-axis orientation on the optical properties of thin CdS films formed by laser ablation Proceedings of Spie - the International Society For Optical Engineering. 3629: 424-432.  0.435
1998 Dushkina NM, Ullrich B. Angular dependence of the reflectance and transmittance of CdS films formed by laser ablation Applied Physics Letters. 72: 2150-2152. DOI: 10.1063/1.121305  0.397
1998 Ullrich B, Koma A, Löher T, Kobayashi T. Optical and hybrid properties of the ZnSe/InSe/Si heterojunction Solid State Communications. 107: 209-211.  0.343
1998 Ullrich B. Influence of thermal and electronic modifications of the GaAs bandgap on bistable luminescent light emitted from a thin CdS film Thin Solid Films. 333: 134-136.  0.38
1998 Ullrich B, Sakai H, Dushkina NM, Ezumi H, Keitoku S, Kobayashi T. The influence of the laser fluence on the transmission features of thin CdS films formed by laser ablation Microelectronic Engineering. 43: 695-700.  0.382
1997 Ullrich B, Sakai H, Dushkina N, Ezumi H, Keitoku S, Kobayashi T. Luminescence Properties of Thin CdS Films Formed by Laser Ablation. Journal of the Spectroscopical Society of Japan. 46: 245-248. DOI: 10.5111/Bunkou.46.245  0.468
1997 Ullrich B, Dushkina NM, Kobayashi T. Bleaching and Spectral Shape Modification of CdS Photocurrent due to He–Ne Laser Pumping Japanese Journal of Applied Physics. 36. DOI: 10.1143/Jjap.36.L682  0.459
1996 Ullrich B, Ezumi H, Keitoku S, Kobayashi T. Temperature dependence of reflectance and transmittance at 514.5 nm of CdS films formed by laser ablation Applied Physics Letters. 68: 2985-2986. DOI: 10.1063/1.116671  0.535
1994 Ullrich B, Kobayashi T. All-optical absorptive and dispersive bistabilities in luminescence of a thin CdS film Japanese Journal of Applied Physics. 33. DOI: 10.1143/Jjap.33.L1523  0.505
1994 Ullrich B, Kobayashi T. All-optical bistability in luminescence of thin CdS films Physica Scripta. 1994: 191-193. DOI: 10.1088/0031-8949/1994/T54/047  0.449
1993 Ullrich B. New Concepts for Material Characterizations and Optical Devices: Positive and Negative Hybrid Logics and Self-Induced Photonic Oscillators Japanese Journal of Applied Physics. 32. DOI: 10.1143/Jjap.32.L411  0.346
1993 Ullrich B, Kulaç I, Pint H. Photoelectronic properties of YBa2Cu3O6 Canadian Journal of Physics. 71: 512-517. DOI: 10.1139/P93-080  0.411
1992 Ullrich B, cc IK, Pint H, Leising G, Kahlert H. Photocurrent in Thin YBa2Cu3O6 Films on Sapphire Japanese Journal of Applied Physics. 31. DOI: 10.1143/Jjap.31.L856  0.42
1991 Ullrich B, Bouchenaki C. Bistable Optical Thin CdS Film Devices: All-Optical and Optoelectronic Features Japanese Journal of Applied Physics. 30. DOI: 10.1143/Jjap.30.L1285  0.437
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