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Huicai Zhong, Ph.D. - Publications

Affiliations: 
2002 North Carolina State University, Raleigh, NC 
Area:
Electronics and Electrical Engineering
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10 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2016 Meng F, Zhong H, Bao D, Yan J, Zhang X. In Situ Coupling of Strung Co4N and Intertwined N-C Fibers towards Free-Standing Bifunctional Cathode for Robust, Efficient, and Flexible Zn-Air Batteries. Journal of the American Chemical Society. PMID 27463122 DOI: 10.1021/jacs.6b05046  0.327
2016 Zhong H, Wang J, Meng F, Zhang X. In Situ Activating Ubiquitous Rust towards Low-Cost, Efficient, Free-Standing, and Recoverable Oxygen Evolution Electrodes. Angewandte Chemie (International Ed. in English). PMID 27436171 DOI: 10.1002/anie.201604040  0.306
2005 Lee CK, Kim JY, Hong SN, Zhong H, Chen B, Misra V. Properties of Ta–Mo alloy gate electrode for n-MOSFET Journal of Materials Science. 40: 2693-2695. DOI: 10.1007/S10853-005-2108-3  0.728
2002 Misra V, Zhong H, Lazar H. Electrical properties of Ru-based alloy gate electrodes for dual metal gate Si-CMOS Ieee Electron Device Letters. 23: 354-356. DOI: 10.1109/Led.2002.1004233  0.519
2001 Zhong H, Heuss G, Suh Y, Hong S, Misra V, Kelly J, Parsons G. Promising Gate Stacks with Ru & RuO2 Gate Electrodes and Y-silicate Dielectrics Mrs Proceedings. 670. DOI: 10.1557/Proc-670-K3.1  0.703
2001 Misra V, Heuss GP, Zhong H. Use of metal–oxide–semiconductor capacitors to detect interactions of Hf and Zr gate electrodes with SiO2 and ZrO2 Applied Physics Letters. 78: 4166-4168. DOI: 10.1063/1.1380240  0.649
2001 Zhong H, Heuss G, Misra V, Luan H, Lee C, Kwong D. Characterization of RuO2 electrodes on Zr silicate and ZrO2 dielectrics Applied Physics Letters. 78: 1134-1136. DOI: 10.1063/1.1347402  0.709
2001 Misra V, Kulkarni M, Zhong H. N and P metal oxide semiconductor field effect transistor characteristics of hafnium-doped SiO2 gate dielectrics Journal of Electronic Materials. 30: 1499-1505. DOI: 10.1007/S11664-001-0165-1  0.664
2001 Zhong H, Heuss G, Suh Y, Misra V, Hong S. Electrical properties of Ru and RuO2 gate electrodes for Si-PMOSFET with ZrO2 and Zr-silicate dielectrics Journal of Electronic Materials. 30: 1493-1498. DOI: 10.1007/S11664-001-0164-2  0.722
2000 Zhong H, Heuss G, Misra V. Electrical properties of RuO 2 gate electrodes for dual metal gate Si-CMOS Ieee Electron Device Letters. 21: 593-595. DOI: 10.1109/55.887476  0.658
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