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Wen-Teng Chang, Ph.D. - Publications

Affiliations: 
2006 Case Western Reserve University, Cleveland Heights, OH, United States 
Area:
Electronics and Electrical Engineering, Materials Science Engineering, Mechanical Engineering
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15 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2019 Chang WT, Hsu HJ, Pao PH. Vertical Field Emission Air-Channel Diodes and Transistors. Micromachines. 10. PMID 31817757 DOI: 10.3390/Mi10120858  0.35
2019 Chang W, Pao P. Field Electrons Intercepted by Coplanar Gates in Nanoscale Air Channel Ieee Transactions On Electron Devices. 66: 3961-3966. DOI: 10.1109/Ted.2019.2928545  0.313
2018 Chang W, Shih C, Wu J, Lin S, Cin L, Yeh W. Back-Biasing to Performance and Reliability Evaluation of UTBB FDSOI, Bulk FinFETs, and SOI FinFETs Ieee Transactions On Nanotechnology. 17: 36-40. DOI: 10.1109/Tnano.2017.2706265  0.342
2015 Chang WT, Cin LG, Yeh WK. Impact of fin width and back bias under hot carrier injection on double-gate FinFETs Ieee Transactions On Device and Materials Reliability. 15: 86-89. DOI: 10.1109/Tdmr.2014.2384737  0.344
2015 Chang W, Liang Y. Geometric Design of Microbolometers Made From CMOS Polycrystalline Silicon Ieee Sensors Journal. 15: 264-268. DOI: 10.1109/Jsen.2014.2341238  0.31
2015 Chang WT, Lin YS, Shih CT. Threshold voltage and transconductance shifting reliance on strained-SiGe channel dimension Solid-State Electronics. 110: 10-13. DOI: 10.1016/J.Sse.2014.11.012  0.308
2014 Chang WT, Chen CW. Resistance of outmost shell- and embedded-end contacts of single- and multi-bridged carbon nanotubes. Journal of Nanoscience and Nanotechnology. 14: 2663-6. PMID 24745281 DOI: 10.1166/Jnn.2014.8495  0.319
2014 Chang W, Lai C, Yeh W. Reliability of the doping concentration in an ultra-thin body and buried oxide silicon on insulator (SOI) and comparison with a partially depleted SOI Microelectronics Reliability. 54: 485-489. DOI: 10.1016/J.Microrel.2013.10.012  0.335
2013 Chang W, Lin Y. Performance Dependence on Width-to-Length Ratio of Si Cap/SiGe Channel MOSFETs Ieee Transactions On Electron Devices. 60: 3663-3668. DOI: 10.1109/Ted.2013.2281397  0.306
2011 Chang W. CLAMPING LOSSES OF FOLDED- AND STRAIGHT-BEAM MEMS RESONATORS MADE FROM POLYCRYSTALLINE 3C-SiC FILMS International Journal of Modern Physics B. 25: 885-896. DOI: 10.1142/S0217979211057980  0.379
2011 Chang W, Lin J, Wang C, Yeh W. Effect of gate capping configurations and silicon-on-insulator thickness with external stresses on partially depleted metal-oxide-semiconductor field-effect transistors Journal of Vacuum Science & Technology B. 29. DOI: 10.1116/1.3534008  0.367
2010 Chang W, Wang C, Lin J, Yeh W. External Stresses on Tensile and Compressive Contact Etching Stop Layer SOI MOSFETs Ieee Transactions On Electron Devices. 57: 1889-1894. DOI: 10.1109/Ted.2010.2051362  0.356
2009 Chang W, Zorman C. Grain size control of (111) polycrystalline 3C-SiC films by doping used as folded-beam MEMS resonators for energy dissipation Microsystem Technologies-Micro-and Nanosystems-Information Storage and Processing Systems. 15: 875-880. DOI: 10.1007/S00542-009-0836-Z  0.515
2008 Chang WT, Zorman C. Electrical Characterization of Microelectromechanical Silicon Carbide Resonators. Sensors (Basel, Switzerland). 8: 5759-5774. PMID 27873838 DOI: 10.3390/S8095759  0.483
2008 Chang W, Zorman CA. Determination of Young’s moduli of 3C (110) single-crystal and (111) polycrystalline silicon carbide from operating frequencies Journal of Materials Science. 43: 4512-4517. DOI: 10.1007/S10853-008-2648-4  0.489
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