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Karthik Sarpatwari, Ph.D. - Publications

Affiliations: 
2009 Pennsylvania State University, State College, PA, United States 
Area:
Materials Science Engineering, Electronics and Electrical Engineering
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13 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2011 Sarpatwari K, Awadelkarim OO, Passmore LJ, Ho TT, Kuo MW, Dellas NS, Mayer TS, Mohney SE. Low-frequency three-terminal charge pumping applied to silicon nanowire field-effect transistors Ieee Transactions On Nanotechnology. 10: 871-874. DOI: 10.1109/Tnano.2010.2087392  0.625
2011 Sarpatwari K, Mohney SE, Awadelkarim OO. Effects of barrier height inhomogeneities on the determination of the Richardson constant Journal of Applied Physics. 109. DOI: 10.1063/1.3530868  0.622
2010 Sarpatwari K, Dellas NS, Awadelkarim OO, Mohney SE. Extracting the Schottky barrier height from axial contacts to semiconductor nanowires Solid-State Electronics. 54: 689-695. DOI: 10.1016/J.Sse.2010.03.006  0.63
2010 Sarpatwari K, Mohney SE, Ashok S, Awadelkarim OO. Minority carrier injection limited current in Re/4H-SiC Schottky diodes Physica Status Solidi (a) Applications and Materials Science. 207: 1509-1513. DOI: 10.1002/Pssa.200925339  0.637
2009 Allen MW, Weng X, Redwing JM, Sarpatwari K, Mohney SE, von Wenckstern H, Grundmann M, Durbin SM. Temperature-dependent properties of nearly ideal ZnO schottky diodes Ieee Transactions On Electron Devices. 56: 2160-2164. DOI: 10.1109/Ted.2009.2026393  0.325
2009 Sarpatwari K, Awadelkarim OO, Allen MW, Durbin SM, Mohney SE. Erratum: “Extracting the Richardson constant: IrOx/n-ZnO Schottky diodes” [Appl. Phys. Lett. 94, 242110 (2009)] Applied Physics Letters. 95: 59901. DOI: 10.1063/1.3197618  0.56
2009 Sarpatwari K, Awadelkarim OO, Allen MW, Durbin SM, Mohney SE. Extracting the Richardson constant: IrOx /n-ZnO Schottky diodes Applied Physics Letters. 94. DOI: 10.1063/1.3156031  0.625
2008 Srinivasan S, Krishnan R, Mangalagiri P, Xie Y, Narayanan V, Irwin MJ, Sarpatwari K. Toward increasing FPGA lifetime Ieee Transactions On Dependable and Secure Computing. 5: 115-126. DOI: 10.1109/Tdsc.2007.70235  0.321
2007 Awadelkarim OO, Jiang J, Suliman SA, Sarpatwari K, Passmore LJ, Lee DO, Roman P, Ruzyllo JR. Electrical studies on metal/SrTa2O6 or TiO 2/ Si substrate stack systems Ecs Transactions. 9: 353-362. DOI: 10.1149/1.2766906  0.593
2007 Sarpatwari K, Passmore L, Suliman SA, Awadelkarim OO. Analysis of current-voltage-temperature characteristics in SiC Schottky diodes using threshold-accepting simulated-annealing techniques Solid-State Electronics. 51: 644-649. DOI: 10.1016/J.Sse.2007.03.008  0.627
2006 Passmore LJ, Sarpatwari K, Suliman SA, Awadelkarim OO, Ridley R, Dolny G, Michalowicz J, Wu CT. Fowler-Nordheim and hot carrier reliabilities of U-shaped trench-gated transistors studied by three terminal charge pumping Thin Solid Films. 504: 302-306. DOI: 10.1016/J.Tsf.2005.09.051  0.64
2006 Sarpatwari K, Passmore LJ, Suliman SA, Awadelkarim OO. Current-voltage characteristics and charge-carrier traps in N-Type 4H-SiC schottky structures Extended Abstracts of the Sixth International Workshop On Junction Technology, Iwjt '06. 250-253.  0.629
2005 Passmore LJ, Sarpatwari K, Suliman SA, Awadelkarim OO, Ridley R, Dolny G, Michalowicz J, Wu CT. Modified three terminal charge pumping technique applied to vertical transistor structures Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 23: 2189-2193. DOI: 10.1116/1.2040449  0.614
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