| Year |
Citation |
Score |
| 2020 |
Goswami S, Deb D, Tempez A, Chaigneau M, Rath SP, Lal M, Ariando, Williams RS, Goswami S, Venkatesan T. Nanometer-Scale Uniform Conductance Switching in Molecular Memristors. Advanced Materials (Deerfield Beach, Fla.). e2004370. PMID 32893411 DOI: 10.1002/Adma.202004370 |
0.304 |
|
| 2020 |
Goswami S, Rath SP, Thompson D, Hedström S, Annamalai M, Pramanick R, Ilic BR, Sarkar S, Hooda S, Nijhuis CA, Martin J, Williams RS, Goswami S, Venkatesan T. Charge disproportionate molecular redox for discrete memristive and memcapacitive switching. Nature Nanotechnology. PMID 32203436 DOI: 10.1038/S41565-020-0653-1 |
0.323 |
|
| 2020 |
Goswami S, Thompson D, Williams RS, Goswami S, Venkatesan T. Colossal current and voltage tunability in an organic memristor via electrode engineering Applied Materials Today. 19: 100626. DOI: 10.1016/J.Apmt.2020.100626 |
0.307 |
|
| 2019 |
Bohaichuk SM, Kumar S, Pitner G, McClellan CJ, Jeong J, Samant MG, Wong HP, Parkin SSP, Williams RS, Pop E. Fast Spiking of a Mott VO2-Carbon Nanotube Composite Device. Nano Letters. PMID 31433663 DOI: 10.1021/Acs.Nanolett.9B01554 |
0.31 |
|
| 2019 |
Medeiros-Ribeiro G, Bratkovski AM, Kamins TI, Ohlberg DAA, Williams RS. Shape transition of germanium nanocrystals on a silicon (001) surface from pyramids to domes Science (New York, N.Y.). 279: 353-5. PMID 9430580 DOI: 10.1126/Science.279.5349.353 |
0.33 |
|
| 2018 |
Kumar S, Williams RS. Separation of current density and electric field domains caused by nonlinear electronic instabilities. Nature Communications. 9: 2030. PMID 29795115 DOI: 10.1038/S41467-018-04452-W |
0.309 |
|
| 2017 |
La Torre C, Kindsmüller A, Wouters DJ, Graves CE, Gibson GA, Strachan JP, Williams RS, Waser R, Menzel S. Volatile HRS asymmetry and subloops in resistive switching oxides. Nanoscale. PMID 28920125 DOI: 10.1039/C7Nr04896C |
0.304 |
|
| 2017 |
Graves CE, Dávila N, Merced-Grafals EJ, Lam S, Strachan JP, Williams RS. Temperature and field-dependent transport measurements in continuously tunable tantalum oxide memristors expose the dominant state variable Applied Physics Letters. 110: 123501. DOI: 10.1063/1.4978757 |
0.302 |
|
| 2016 |
Kumar S, Wang Z, Huang X, Kumari N, Davila N, Strachan JP, Vine D, Kilcoyne AL, Nishi Y, Williams RS. Conduction Channel Formation and Dissolution Due to Oxygen Thermophoresis/Diffusion in Hafnium Oxide Memristors. Acs Nano. PMID 27957851 DOI: 10.1021/Acsnano.6B06275 |
0.325 |
|
| 2016 |
Zhang J, Norris KJ, Gibson G, Zhao D, Samuels K, Zhang MM, Yang JJ, Park J, Sinclair R, Jeon Y, Li Z, Williams RS. Thermally induced crystallization in NbO2 thin films. Scientific Reports. 6: 34294. PMID 27682633 DOI: 10.1038/Srep34294 |
0.387 |
|
| 2016 |
Diaz Leon JJ, Fryauf DM, Cormia RD, Zhang MM, Samuels K, Williams RS, Kobayashi NP. Reflectometry-ellipsometry reveals thickness, growth rate and phase composition in oxidation of copper. Acs Applied Materials & Interfaces. PMID 27505052 DOI: 10.1021/Acsami.6B06626 |
0.323 |
|
| 2016 |
Yi W, Savel'ev SE, Medeiros-Ribeiro G, Miao F, Zhang MX, Yang JJ, Bratkovsky AM, Williams RS. Quantized conductance coincides with state instability and excess noise in tantalum oxide memristors. Nature Communications. 7: 11142. PMID 27041485 DOI: 10.1038/Ncomms11142 |
0.522 |
|
| 2016 |
Choi BJ, Torrezan AC, Strachan JP, Kotula PG, Lohn AJ, Marinella MJ, Li Z, Williams RS, Yang JJ. High-Speed and Low-Energy Nitride Memristors Advanced Functional Materials. 26: 5290-5296. DOI: 10.1002/Adfm.201600680 |
0.323 |
|
| 2015 |
Kumar S, Graves CE, Strachan JP, Kilcoyne ALD, Tyliszczak T, Nishi Y, Williams RS. In-operando synchronous time-multiplexed O K-edge x-ray absorption spectromicroscopy of functioning tantalum oxide memristors Journal of Applied Physics. 118. DOI: 10.1063/1.4926477 |
0.318 |
|
| 2015 |
Xia Q, Wu W, Jung GY, Pi S, Lin P, Chen Y, Li X, Li Z, Wang SY, Williams RS. Nanoimprint lithography enables memristor crossbars and hybrid circuits Applied Physics a: Materials Science and Processing. DOI: 10.1007/S00339-015-9038-Y |
0.307 |
|
| 2013 |
Strachan JP, Yang JJ, Montoro LA, Ospina CA, Ramirez AJ, Kilcoyne AL, Medeiros-Ribeiro G, Williams RS. Characterization of electroforming-free titanium dioxide memristors. Beilstein Journal of Nanotechnology. 4: 467-73. PMID 23946916 DOI: 10.3762/Bjnano.4.55 |
0.393 |
|
| 2013 |
Kumar S, Pickett MD, Strachan JP, Gibson G, Nishi Y, Williams RS. Local temperature redistribution and structural transition during joule-heating-driven conductance switching in VO2. Advanced Materials (Deerfield Beach, Fla.). 25: 6128-32. PMID 23868142 DOI: 10.1002/Adma.201302046 |
0.31 |
|
| 2013 |
Choi BJ, Torrezan AC, Norris KJ, Miao F, Strachan JP, Zhang MX, Ohlberg DA, Kobayashi NP, Yang JJ, Williams RS. Electrical performance and scalability of Pt dispersed SiO2 nanometallic resistance switch. Nano Letters. 13: 3213-7. PMID 23746124 DOI: 10.1021/Nl401283Q |
0.547 |
|
| 2013 |
Pickett MD, Medeiros-Ribeiro G, Williams RS. A scalable neuristor built with Mott memristors. Nature Materials. 12: 114-7. PMID 23241533 DOI: 10.1038/Nmat3510 |
0.355 |
|
| 2013 |
Han JW, Choi BJ, Yang JJ, Moon DI, Choi YK, Williams RS, Meyyappan M. A replacement of high-k process for CMOS transistor by atomic layer deposition Semiconductor Science and Technology. 28. DOI: 10.1088/0268-1242/28/8/082003 |
0.302 |
|
| 2013 |
Nickel JH, Strachan JP, Pickett MD, Schamp CT, Yang JJ, Graham JA, Williams RS. Memristor structures for high scalability: Non-linear and symmetric devices utilizing fabrication friendly materials and processes Microelectronic Engineering. 103: 66-69. DOI: 10.1016/J.Mee.2012.09.007 |
0.306 |
|
| 2012 |
Pickett MD, Williams RS. Sub-100 fJ and sub-nanosecond thermally driven threshold switching in niobium oxide crosspoint nanodevices. Nanotechnology. 23: 215202. PMID 22551985 DOI: 10.1088/0957-4484/23/21/215202 |
0.336 |
|
| 2012 |
Miao F, Yi W, Goldfarb I, Yang JJ, Zhang MX, Pickett MD, Strachan JP, Medeiros-Ribeiro G, Williams RS. Continuous electrical tuning of the chemical composition of TaO(x)-based memristors. Acs Nano. 6: 2312-8. PMID 22324891 DOI: 10.1021/Nn2044577 |
0.551 |
|
| 2012 |
Yang JJ, Zhang MX, Miao F, Strachan JP, Torrezan AC, Pickett MD, Yi W, Choi BJ, Nickel JH, Medeiros-Ribeiro G, Williams RS. Oxide based memristive devices Icsict 2012 - 2012 Ieee 11th International Conference On Solid-State and Integrated Circuit Technology, Proceedings. DOI: 10.1109/ICSICT.2012.6467661 |
0.478 |
|
| 2012 |
Goldfarb I, Miao F, Yang JJ, Yi W, Strachan JP, Zhang MX, Pickett MD, Medeiros-Ribeiro G, Williams RS. Electronic structure and transport measurements of amorphous transition-metal oxides: Observation of Fermi glass behavior Applied Physics a: Materials Science and Processing. 107: 1-11. DOI: 10.1007/S00339-012-6856-Z |
0.599 |
|
| 2011 |
Strachan JP, Torrezan AC, Medeiros-Ribeiro G, Williams RS. Measuring the switching dynamics and energy efficiency of tantalum oxide memristors. Nanotechnology. 22: 505402. PMID 22108243 DOI: 10.1088/0957-4484/22/50/505402 |
0.308 |
|
| 2011 |
Torrezan AC, Strachan JP, Medeiros-Ribeiro G, Williams RS. Sub-nanosecond switching of a tantalum oxide memristor. Nanotechnology. 22: 485203. PMID 22071289 DOI: 10.1088/0957-4484/22/48/485203 |
0.341 |
|
| 2011 |
Miao F, Strachan JP, Yang JJ, Zhang MX, Goldfarb I, Torrezan AC, Eschbach P, Kelley RD, Medeiros-Ribeiro G, Williams RS. Anatomy of a nanoscale conduction channel reveals the mechanism of a high-performance memristor. Advanced Materials (Deerfield Beach, Fla.). 23: 5633-40. PMID 22065427 DOI: 10.1002/Adma.201103379 |
0.527 |
|
| 2011 |
Ou FS, Hu M, Naumov I, Kim A, Wu W, Bratkovsky AM, Li X, Williams RS, Li Z. Hot-spot engineering in polygonal nanofinger assemblies for surface enhanced Raman spectroscopy. Nano Letters. 11: 2538-42. PMID 21604751 DOI: 10.1021/Nl201212N |
0.307 |
|
| 2011 |
Xia Q, Pickett MD, Yang JJ, Zhang MX, Borghetti J, Li X, Wu W, Medeiros-Ribeiro G, Williams RS. Impact of geometry on the performance of memristive nanodevices. Nanotechnology. 22: 254026. PMID 21572201 DOI: 10.1088/0957-4484/22/25/254026 |
0.307 |
|
| 2011 |
Strachan JP, Strukov DB, Borghetti J, Yang JJ, Medeiros-Ribeiro G, Williams RS. The switching location of a bipolar memristor: chemical, thermal and structural mapping. Nanotechnology. 22: 254015. PMID 21572186 DOI: 10.1088/0957-4484/22/25/254015 |
0.327 |
|
| 2011 |
Kim A, Ou FS, Ohlberg DA, Hu M, Williams RS, Li Z. Study of molecular trapping inside gold nanofinger arrays on surface-enhanced Raman substrates. Journal of the American Chemical Society. 133: 8234-9. PMID 21520938 DOI: 10.1021/Ja200247X |
0.306 |
|
| 2011 |
Strachan JP, Medeiros-Ribeiro G, Yang JJ, Zhang MX, Miao F, Goldfarb I, Holt M, Rose V, Williams RS. Spectromicroscopy of tantalum oxide memristors Applied Physics Letters. 98. DOI: 10.1063/1.3599589 |
0.552 |
|
| 2011 |
Yang JJ, Kobayashi NP, Strachan JP, Zhang MX, Ohlberg DAA, Pickett MD, Li Z, Medeiros-Ribeiro G, Williams RS. Dopant control by atomic layer deposition in oxide films for memristive switches Chemistry of Materials. 23: 123-125. DOI: 10.1021/Cm1020959 |
0.337 |
|
| 2011 |
Strukov DB, Williams RS. An ionic bottle for high-speed, long-retention memristive devices Applied Physics a: Materials Science and Processing. 102: 1033-1036. DOI: 10.1007/S00339-011-6321-4 |
0.325 |
|
| 2011 |
Miao F, Ohlberg DAA, Williams RS, Lau CN. Characterization of quantum conducting channels in metal/molecule/metal devices using pressure-modulated conductance microscopy Applied Physics a: Materials Science and Processing. 102: 943-948. DOI: 10.1007/S00339-011-6298-Z |
0.563 |
|
| 2011 |
Yi W, Perner F, Qureshi MS, Abdalla H, Pickett MD, Yang JJ, Zhang MXM, Medeiros-Ribeiro G, Williams RS. Feedback write scheme for memristive switching devices Applied Physics a: Materials Science and Processing. 102: 973-982. DOI: 10.1007/S00339-011-6279-2 |
0.314 |
|
| 2011 |
Yang JJ, Strachan JP, Miao F, Zhang MX, Pickett MD, Yi W, Ohlberg DAA, Medeiros-Ribeiro G, Williams RS. Metal/TiO2 interfaces for memristive switches Applied Physics a: Materials Science and Processing. 102: 785-789. DOI: 10.1007/S00339-011-6265-8 |
0.577 |
|
| 2010 |
Xia Q, Yang JJ, Wu W, Li X, Williams RS. Self-aligned memristor cross-point arrays fabricated with one nanoimprint lithography step. Nano Letters. 10: 2909-14. PMID 20590084 DOI: 10.1021/Nl1017157 |
0.313 |
|
| 2010 |
Wu W, Hu M, Ou FS, Li Z, Williams RS. Cones fabricated by 3D nanoimprint lithography for highly sensitive surface enhanced Raman spectroscopy. Nanotechnology. 21: 255502. PMID 20508315 DOI: 10.1088/0957-4484/21/25/255502 |
0.316 |
|
| 2010 |
Borghetti J, Snider GS, Kuekes PJ, Yang JJ, Stewart DR, Williams RS. 'Memristive' switches enable 'stateful' logic operations via material implication. Nature. 464: 873-6. PMID 20376145 DOI: 10.1038/Nature08940 |
0.308 |
|
| 2010 |
Wu W, Hu M, Ou FS, Williams RS, Li Z. Rational engineering of highly sensitive SERS substrate based on nanocone structures Proceedings of Spie - the International Society For Optical Engineering. 7673. DOI: 10.1117/12.849959 |
0.33 |
|
| 2010 |
Yang JJ, Miao F, Pickett MD, Ohlberg DAA, Stewart DR, Lau CN, Williams RS. Corrigendum on 'The mechanism of electroforming of metal oxide memristive switches' Nanotechnology. 21: 339803-339803. DOI: 10.1088/0957-4484/21/33/339803 |
0.543 |
|
| 2010 |
Yang JJ, Zhang MX, Strachan JP, Miao F, Pickett MD, Kelley RD, Medeiros-Ribeiro G, Williams RS. High switching endurance in TaOx memristive devices Applied Physics Letters. 97. DOI: 10.1063/1.3524521 |
0.569 |
|
| 2010 |
Maitani MM, Allara DL, Ohlberg DAA, Li Z, Williams RS, Stewart DR. High integrity metal/organic device interfaces via low temperature buffer layer assisted metal atom nucleation Applied Physics Letters. 96. DOI: 10.1063/1.3377044 |
0.342 |
|
| 2009 |
Strukov DB, Williams RS. Four-dimensional address topology for circuits with stacked multilayer crossbar arrays. Proceedings of the National Academy of Sciences of the United States of America. 106: 20155-8. PMID 19918072 DOI: 10.1073/Pnas.0906949106 |
0.325 |
|
| 2009 |
Xia Q, Robinett W, Cumbie MW, Banerjee N, Cardinali TJ, Yang JJ, Wu W, Li X, Tong WM, Strukov DB, Snider GS, Medeiros-Ribeiro G, Williams RS. Memristor-CMOS hybrid integrated circuits for reconfigurable logic. Nano Letters. 9: 3640-5. PMID 19722537 DOI: 10.1021/Nl901874J |
0.324 |
|
| 2009 |
Tang J, Li Z, Xia Q, Williams RS. Fractal structure formation from Ag nanoparticle films on insulating substrates. Langmuir : the Acs Journal of Surfaces and Colloids. 25: 7222-5. PMID 19496573 DOI: 10.1021/La9010532 |
0.353 |
|
| 2009 |
Joshua Yang J, Miao F, Pickett MD, Ohlberg DA, Stewart DR, Lau CN, Williams RS. The mechanism of electroforming of metal oxide memristive switches. Nanotechnology. 20: 215201. PMID 19423925 DOI: 10.1088/0957-4484/20/21/215201 |
0.693 |
|
| 2009 |
Maitani MM, Ohlberg DA, Li Z, Allara DL, Stewart DR, Williams RS. Study of SERS chemical enhancement factors using buffer layer assisted growth of metal nanoparticles on self-assembled monolayers. Journal of the American Chemical Society. 131: 6310-1. PMID 19371083 DOI: 10.1021/Ja809347Y |
0.327 |
|
| 2009 |
Strukov DB, Borghetti JL, Williams RS. Coupled ionic and electronic transport model of thin-film semiconductor memristive behavior. Small (Weinheim An Der Bergstrasse, Germany). 5: 1058-63. PMID 19226597 DOI: 10.1002/Smll.200801323 |
0.319 |
|
| 2009 |
Borghetti J, Li Z, Straznicky J, Li X, Ohlberg DA, Wu W, Stewart DR, Williams RS. A hybrid nanomemristor/transistor logic circuit capable of self-programming. Proceedings of the National Academy of Sciences of the United States of America. 106: 1699-703. PMID 19171903 DOI: 10.1073/Pnas.0806642106 |
0.314 |
|
| 2009 |
Logeeswaran Vj, Kobayashi NP, Islam MS, Wu W, Chaturvedi P, Fang NX, Wang SY, Williams RS. Ultrasmooth silver thin films deposited with a germanium nucleation layer. Nano Letters. 9: 178-82. PMID 19105737 DOI: 10.1021/Nl8027476 |
0.339 |
|
| 2009 |
Hu M, Tang J, Ou FS, Kuo HP, Wang SY, Li Z, Williams RS. Metal coated si nanograss as highly sensitive SERS sensors Proceedings of Spie - the International Society For Optical Engineering. 7312. DOI: 10.1117/12.818992 |
0.319 |
|
| 2009 |
Yang JJ, Xiang H, Ji C, Stickle WF, Stewart DR, Ohlberg DAA, Williams RS, Chang YA. Origin of inverse tunneling magnetoresistance in a symmetric junction revealed by delaminating the buried electronic interface Applied Physics Letters. 95. DOI: 10.1063/1.3272684 |
0.32 |
|
| 2009 |
Borghetti J, Strukov DB, Pickett MD, Yang JJ, Stewart DR, Williams RS. Electrical transport and thermometry of electroformed titanium dioxide memristive switches Journal of Applied Physics. 106. DOI: 10.1063/1.3264621 |
0.325 |
|
| 2009 |
Pickett MD, Strukov DB, Borghetti JL, Yang JJ, Snider GS, Stewart DR, Williams RS. Switching dynamics in titanium dioxide memristive devices Journal of Applied Physics. 106. DOI: 10.1063/1.3236506 |
0.331 |
|
| 2009 |
Miao F, Yang JJ, Strachan JP, Stewart D, Williams RS, Lau CN. Force modulation of tunnel gaps in metal oxide memristive nanoswitches Applied Physics Letters. 95. DOI: 10.1063/1.3227651 |
0.589 |
|
| 2009 |
Tang J, Ou FS, Kuo HP, Hu M, Stickle WF, Li Z, Williams RS. Silver-coated Si nanograss as highly sensitive surface-enhanced Raman spectroscopy substrates Applied Physics a: Materials Science and Processing. 96: 793-797. DOI: 10.1007/S00339-009-5305-0 |
0.354 |
|
| 2009 |
Kobayashi NP, Mathai S, Li X, Logeeswaran VJ, Islam MS, Lohn A, Onishi T, Straznicky J, Wang SY, Williams RS. Ensembles of indium phosphide nanowires: Physical properties and functional devices integrated on non-single crystal platforms Applied Physics a: Materials Science and Processing. 95: 1005-1013. DOI: 10.1007/S00339-009-5110-9 |
0.314 |
|
| 2009 |
Strukov DB, Williams RS. Exponential ionic drift: Fast switching and low volatility of thin-film memristors Applied Physics a: Materials Science and Processing. 94: 515-519. DOI: 10.1007/S00339-008-4975-3 |
0.312 |
|
| 2008 |
Tang J, Ponizovskaya EV, Bratkovsky AM, Stewart DR, Li Z, Williams RS. Metallic nanocrystals near ultrasmooth metallic films for surface-enhanced Raman scattering application. Nanotechnology. 19: 415702. PMID 21832653 DOI: 10.1088/0957-4484/19/41/415702 |
0.338 |
|
| 2008 |
Li Z, Pickett MD, Stewart D, Ohlberg DA, Li X, Wu W, Robinett W, Williams RS. Experimental demonstration of a defect-tolerant nanocrossbar demultiplexer. Nanotechnology. 19: 165203. PMID 21825637 DOI: 10.1088/0957-4484/19/16/165203 |
0.306 |
|
| 2008 |
Miao F, Ohlberg D, Stewart DR, Williams RS, Lau CN. Quantum conductance oscillations in metal/molecule/metal switches at room temperature. Physical Review Letters. 101: 016802. PMID 18764137 DOI: 10.1103/Physrevlett.101.016802 |
0.688 |
|
| 2008 |
Yang JJ, Pickett MD, Li X, Ohlberg DA, Stewart DR, Williams RS. Memristive switching mechanism for metal/oxide/metal nanodevices. Nature Nanotechnology. 3: 429-33. PMID 18654568 DOI: 10.1038/Nnano.2008.160 |
0.35 |
|
| 2008 |
Leite MS, Malachias A, Kycia SW, Kamins TI, Williams RS, Medeiros-Ribeiro G. Evolution of thermodynamic potentials in closed and open nanocrystalline systems: Ge-Si:Si(001) islands. Physical Review Letters. 100: 226101. PMID 18643432 DOI: 10.1103/Physrevlett.100.226101 |
0.311 |
|
| 2008 |
Strukov DB, Snider GS, Stewart DR, Williams RS. The missing memristor found. Nature. 453: 80-3. PMID 18451858 DOI: 10.1038/Nature06932 |
0.309 |
|
| 2008 |
Blackstock JJ, Donley CL, Stickle WF, Ohlberg DA, Yang JJ, Stewart DR, Williams RS. Oxide and carbide formation at titanium/organic monolayer interfaces. Journal of the American Chemical Society. 130: 4041-7. PMID 18318537 DOI: 10.1021/Ja710448E |
0.362 |
|
| 2008 |
Lai Q, Li Z, Zhang L, Li X, Stickle WF, Zhu Z, Gu Z, Kamins TI, Williams RS, Chen Y. An organic/Si nanowire hybrid field configurable transistor. Nano Letters. 8: 876-80. PMID 18266332 DOI: 10.1021/Nl073112Y |
0.33 |
|
| 2008 |
Li Z, Li X, Ohlberg DAA, Straznicky J, Wu W, Yu Z, Borghetti J, Tong W, Stewart D, Williams RS. Fabrication and test of nano crossbar switches/MOSFET hybrid circuits by imprinting lithography Proceedings of Spie. 6921: 692108. DOI: 10.1117/12.774144 |
0.342 |
|
| 2008 |
Kobayashi NP, Williams RS. Two-stage atomic layer deposition of aluminum oxide on alkanethiolate self-assembled monolayers using n-propanol and water as oxygen sources Chemistry of Materials. 20: 5356-5360. DOI: 10.1021/Cm702848Y |
0.301 |
|
| 2007 |
Park I, Li Z, Pisano AP, Williams RS. Selective surface functionalization of silicon nanowires via nanoscale joule heating. Nano Letters. 7: 3106-11. PMID 17894518 DOI: 10.1021/Nl071637K |
0.324 |
|
| 2007 |
Donley CL, Blackstock JJ, Stickle WF, Stewart DR, Williams RS. In-situ infrared spectroscopy of buried organic monolayers: influence of the substrate on titanium reactivity with a Langmuir-Blodgett film. Langmuir : the Acs Journal of Surfaces and Colloids. 23: 7620-5. PMID 17559236 DOI: 10.1021/La062960Q |
0.341 |
|
| 2007 |
Vj L, Chan M, Islam MS, Horsley DA, Wu W, Wang SY, Williams RS. Surface Deformation of Metal Films Under Controlled Pressure for Generating Ultra-flat Metal Surfaces Mrs Proceedings. 990. DOI: 10.1557/Proc-0990-B08-22 |
0.301 |
|
| 2007 |
Kobayashi NP, Wang SY, Santori C, Williams RS. Indium phosphide nanoneedles on non-single crystalline semiconductor surfaces Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 46: 6346-6351. DOI: 10.1143/Jjap.46.6346 |
0.361 |
|
| 2007 |
Lim DK, Lee D, Lee H, Bae SS, Choi J, Kim S, Ji C, Ragan R, Ohlberg DAA, Chang YA, Williams RS. Structure and electronic properties of self-assembled Pt silicide nanowires on Si(100) Nanotechnology. 18. DOI: 10.1088/0957-4484/18/9/095706 |
0.547 |
|
| 2007 |
Stewart DR, Gibson G, Jung GY, Wu W, Straznicky J, Tong W, Li Z, Williams RS. Direct-write programming of nanoscale demultiplexer arrays Nanotechnology. 18: 415201. DOI: 10.1088/0957-4484/18/41/415201 |
0.326 |
|
| 2007 |
Snider GS, Williams RS. Nano/CMOS architectures using a field-programmable nanowire interconnect Nanotechnology. 18. DOI: 10.1088/0957-4484/18/3/035204 |
0.315 |
|
| 2007 |
Blackstock JJ, Stickle WF, Donley CL, Stewart DR, Williams RS. Internal structure of a molecular junction device: Chemical reduction of PtO2 by Ti evaporation onto an interceding organic monolayer Journal of Physical Chemistry C. 111: 16-20. DOI: 10.1021/Jp066266V |
0.354 |
|
| 2007 |
Kobayashi NP, Donley CL, Wang SY, Williams RS. Atomic layer deposition of aluminum oxide on hydrophobic and hydrophilic surfaces Journal of Crystal Growth. 299: 218-222. DOI: 10.1016/J.Jcrysgro.2006.11.224 |
0.335 |
|
| 2007 |
Vanfleet RR, Basile DP, Kamins TI, Silcox J, Williams RS. Silicon-germanium interdiffusion and interfaces in self-assembled quantum dots Applied Physics a: Materials Science and Processing. 86: 1-9. DOI: 10.1007/S00339-006-3724-8 |
0.331 |
|
| 2006 |
You JP, Choi JH, Kim S, Li X, Williams RS, Ragan R. Regular arrays of monodisperse platinum/erbium disilicide core-shell nanowires and nanoparticles on Si(001) via a self-assembled template. Nano Letters. 6: 1858-62. PMID 16967991 DOI: 10.1021/Nl060640L |
0.501 |
|
| 2006 |
Lee S, Park J, Ragan R, Kim S, Lee Z, Lim do K, Ohlberg DA, Williams RS. Self-assembled monolayers on Pt(111): molecular packing structure and strain effects observed by scanning tunneling microscopy. Journal of the American Chemical Society. 128: 5745-50. PMID 16637642 DOI: 10.1021/Ja058037C |
0.485 |
|
| 2006 |
Jung GY, Johnston-Halperin E, Wu W, Yu Z, Wang SY, Tong WM, Li Z, Green JE, Sheriff BA, Boukai A, Bunimovich Y, Heath JR, Williams RS. Circuit fabrication at 17 nm half-pitch by nanoimprint lithography. Nano Letters. 6: 351-4. PMID 16522021 DOI: 10.1021/Nl052110F |
0.317 |
|
| 2006 |
Johns C, Kimukin I, Islam MS, Ohlberg DAA, Donley C, Stewart DR, Wang S, Williams RS. A Novel Non-destructive Interfacing Technique for Molecular Scale Switching Junctions Mrs Proceedings. 938. DOI: 10.1557/Proc-0938-N08-01 |
0.326 |
|
| 2006 |
Kimukin I, Islam MS, Williams RS. Surface depletion thickness of p-doped silicon nanowires grown using metal-catalysed chemical vapour deposition Nanotechnology. 17. DOI: 10.1088/0957-4484/17/11/S03 |
0.365 |
|
| 2006 |
Yasseri AA, Sharma S, Kamins TI, Li Z, Williams RS. Growth and use of metal nanocrystal assemblies on high-density silicon nanowires formed by chemical vapor deposition Applied Physics a: Materials Science and Processing. 82: 659-664. DOI: 10.1007/S00339-005-3446-3 |
0.367 |
|
| 2005 |
Jung GY, Li Z, Wu W, Ganapathiappan S, Li X, Olynick DL, Wang SY, Tong WM, Williams RS. Improved pattern transfer in nanoimprint lithography at 30 nm half-pitch by substrate-surface functionalization. Langmuir : the Acs Journal of Surfaces and Colloids. 21: 6127-30. PMID 15982008 DOI: 10.1021/La050021C |
0.302 |
|
| 2005 |
Young G, Wu W, Lee H, Wang SY, Tong WM, Williams RS. Fabrication of Multi-bit Crossbar Circuits at Sub-50 nm Half-pitch by Using UV-based Nanoimprint Lithography Journal of Photopolymer Science and Technology. 18: 565-570. DOI: 10.2494/Photopolymer.18.565 |
0.331 |
|
| 2005 |
Sharma S, Kamins TI, Islam MS, Williams RS, Marshall AF. Structural characteristics and connection mechanism of gold-catalyzed bridging silicon nanowires Journal of Crystal Growth. 280: 562-568. DOI: 10.1016/J.Jcrysgro.2005.04.039 |
0.352 |
|
| 2005 |
Islam MS, Sharma S, Kamins TI, Williams RS. A novel interconnection technique for manufacturing nanowire devices Applied Physics A. 80: 1133-1140. DOI: 10.1007/S00339-004-3177-X |
0.356 |
|
| 2005 |
Wu W, Jung G-, Olynick DL, Straznicky J, Li Z, Li X, Ohlberg DAA, Chen Y, Wang S-, Liddle JA, Tong WM, Williams RS. One-kilobit cross-bar molecular memory circuits at 30-nm half-pitch fabricated by nanoimprint lithography Applied Physics A. 80: 1173-1178. DOI: 10.1007/S00339-004-3176-Y |
0.301 |
|
| 2005 |
Lau C, Stewart D, Bockrath M, Williams RS. Scanned probe imaging of nanoscale conducting channels in Pt/alkanoic acid monolayer/Ti devices Applied Physics A. 80: 1373-1378. DOI: 10.1007/S00339-004-3171-3 |
0.33 |
|
| 2005 |
Islam MS, Jung GY, Ha T, Stewart DR, Chen Y, Wang SY, Williams RS. Ultra-smooth platinum surfaces for nanoscale devices fabricated using chemical mechanical polishing Applied Physics A. 80: 1385-1389. DOI: 10.1007/S00339-004-3170-4 |
0.351 |
|
| 2005 |
Richter CA, Stewart DR, Ohlberg DAA, Williams RS. Electrical characterization of Al/AlOx/molecule/Ti/Al devices Applied Physics a: Materials Science and Processing. 80: 1355-1362. DOI: 10.1007/S00339-004-3169-X |
0.304 |
|
| 2005 |
Ragan R, Kim S, Li X, Williams RS. Platinum passivation of self-assembled erbium disilicide nanowire arrays on Si(001) Applied Physics a: Materials Science and Processing. 80: 1339-1342. DOI: 10.1007/S00339-004-3162-4 |
0.532 |
|
| 2005 |
Ohlberg D, Blackstock JJ, Ragan R, Kim S, Williams RS. Optimization of in-vacuo template-stripped Pt surfaces via UHV STM Applied Physics a: Materials Science and Processing. 80: 1327-1334. DOI: 10.1007/S00339-004-3161-5 |
0.544 |
|
| 2005 |
Lee D, Lim DK, Bae SS, Kim S, Ragan R, Ohlberg DAA, Chen Y, Williams RS. Unidirectional hexagonal rare-earth disilicide nanowires on vicinal Si(100)-2×1 Applied Physics a: Materials Science and Processing. 80: 1311-1313. DOI: 10.1007/S00339-004-3158-0 |
0.527 |
|
| 2005 |
Kamins TI, Williams RS, Ohlberg DAA. Annealing of chemically vapor deposited nanoscale Ti-Si islands on Si Applied Physics A. 80: 1279-1286. DOI: 10.1007/S00339-004-3156-2 |
0.312 |
|
| 2005 |
Sharma S, Kamins TI, Williams RS. Synthesis of thin silicon nanowires using gold-catalyzed chemical vapor deposition Applied Physics A. 80: 1225-1229. DOI: 10.1007/S00339-004-3155-3 |
0.352 |
|
| 2005 |
Ji C, Ragan R, Kim S, Chang YA, Chen Y, Ohlberg DAA, Williams RS. Surface Reconstruction of Pt/Si(001) Applied Physics a: Materials Science and Processing. 80: 1301-1304. DOI: 10.1007/S00339-004-3150-8 |
0.504 |
|
| 2004 |
Islam MS, Sharma S, Kamins TI, Williams RS. Ultrahigh-density silicon nanobridges formed between two vertical silicon surfaces Nanotechnology. 15. DOI: 10.1088/0957-4484/15/5/L01 |
0.369 |
|
| 2004 |
Kamins TI, Ohlberg DAA, Williams RS. Deposition and structure of chemically vapor deposited nanoscale Ti-Si islands on Si Journal of Applied Physics. 96: 5195-5201. DOI: 10.1063/1.1789626 |
0.315 |
|
| 2004 |
Kamins TI, Medeiros-Ribeiro G, Ohlberg DAA, Williams RS. Annealing of phosphorus-doped Ge islands on Si(001) Journal of Applied Physics. 95: 1562-1567. DOI: 10.1063/1.1635994 |
0.314 |
|
| 2004 |
Kamins TI, Li X, Williams RS, Liu X. Growth and Structure of Chemically Vapor Deposited Ge Nanowires on Si Substrates Nano Letters. 4: 503-506. DOI: 10.1021/Nl035166N |
0.355 |
|
| 2004 |
Lau CN, Stewart DR, Williams RS, Bockrath M. Direct Observation of Nanoscale Switching Centers in Metal/Molecule/Metal Structures Nano Letters. 4: 569-572. DOI: 10.1021/Nl035117A |
0.33 |
|
| 2004 |
Stewart DR, Ohlberg DAA, Beck PA, Chen Y, Williams RS, Jeppesen JO, Nielsen KA, Stoddart JF. Molecule-Independent Electrical Switching in Pt/Organic Monolayer/Ti Devices Nano Letters. 4: 133-136. DOI: 10.1021/Nl034795U |
0.311 |
|
| 2004 |
Ragan R, Ohlberg D, Blackstock JJ, Kim S, Williams RS. Atomic surface structure of UHV-prepared template-stripped platinum and single-crystal platinum(111) Journal of Physical Chemistry B. 108: 20187-20192. DOI: 10.1021/Jp0466789 |
0.547 |
|
| 2004 |
Li Z, Kamins TI, Li X, Williams RS. Chlorination of Si surfaces with gaseous hydrogen chloride at elevated temperatures Surface Science. 554. DOI: 10.1016/J.Susc.2004.01.057 |
0.328 |
|
| 2004 |
Sharma S, Kamins TI, Williams RS. Diameter control of Ti-catalyzed silicon nanowires Journal of Crystal Growth. 267: 613-618. DOI: 10.1016/J.Jcrysgro.2004.04.042 |
0.33 |
|
| 2003 |
Malachias A, Kycia S, Medeiros-Ribeiro G, Magalhães-Paniago R, Kamins TI, Williams RS. 3D composition of epitaxial nanocrystals by anomalous X-ray diffraction: observation of a Si-rich core in Ge domes on Si(100). Physical Review Letters. 91: 176101. PMID 14611360 DOI: 10.1103/Physrevlett.91.176101 |
0.311 |
|
| 2003 |
Rudd RE, Briggs GA, Sutton AP, Medeiros-Ribeiro G, Williams RS. Equilibrium model of bimodal distributions of epitaxial island growth. Physical Review Letters. 90: 146101. PMID 12731931 DOI: 10.1103/Physrevlett.90.146101 |
0.309 |
|
| 2003 |
Chang S, Li Z, Lau CN, Larade B, Williams RS. Investigation of a model molecular-electronic rectifier with an evaporated Ti-metal top contact Applied Physics Letters. 83: 3198-3200. DOI: 10.1063/1.1616989 |
0.357 |
|
| 2003 |
Kamins TI, Medeiros-Ribeiro G, Ohlberg DAA, Williams RS. Influence of phosphine on Ge/Si(001) island growth by chemical vapor deposition Journal of Applied Physics. 94: 4215-4224. DOI: 10.1063/1.1604957 |
0.326 |
|
| 2003 |
Kamins TI, Li X, Williams RS. Thermal stability of Ti-catalyzed Si nanowires Applied Physics Letters. 82: 263-265. DOI: 10.1063/1.1534616 |
0.338 |
|
| 2003 |
Li Z, Chang S, Williams RS. Self-Assembly of Alkanethiol Molecules onto Platinum and Platinum Oxide Surfaces Langmuir. 19: 6744-6749. DOI: 10.1021/La034245B |
0.334 |
|
| 2003 |
Ragan R, Chen Y, Ohlberg DAA, Medeiros-Ribeiro G, Williams RS. Ordered arrays of rare-earth silicide nanowires on Si(0 0 1) Journal of Crystal Growth. 251: 657-661. DOI: 10.1016/S0022-0248(02)02292-3 |
0.314 |
|
| 2002 |
Chen Y, Ohlberg DAA, Williams RS. Nanowires of four epitaxial hexagonal silicides grown on Si(001) Journal of Applied Physics. 91: 3213-3218. DOI: 10.1063/1.1428807 |
0.319 |
|
| 2002 |
Kamins TI, Williams RS, Hesjedal T, Harris JS. Chemically vapor deposited Si nanowires nucleated by self-assembled Ti islands on patterned and unpatterned Si substrates Physica E-Low-Dimensional Systems & Nanostructures. 13: 995-998. DOI: 10.1016/S1386-9477(02)00287-4 |
0.33 |
|
| 2002 |
Kamins TI, Medeiros-Ribeiro G, Ohlberg DAA, Williams RS. Effect of phosphorus on island formation Physica E-Low-Dimensional Systems & Nanostructures. 13: 974-977. DOI: 10.1016/S1386-9477(02)00248-5 |
0.3 |
|
| 2001 |
Kamins TI, Ohlberg DAA, Williams RS. Effect of phosphorus on Ge/Si(001) island formation Applied Physics Letters. 78: 2220-2222. DOI: 10.1063/1.1361096 |
0.317 |
|
| 2000 |
Williams RS, Medeiros-Ribeiro G, Kamins TI, Ohlberg DAA. Thermodynamics of the size and shape of nanocrystals: epitaxial Ge on Si(001). Annual Review of Physical Chemistry. 51: 527-551. PMID 11031292 DOI: 10.1146/Annurev.Physchem.51.1.527 |
0.307 |
|
| 2000 |
Henstrom WL, Liu C, Gibson JM, Kamins TI, Williams RS. Dome-to-pyramid shape transition in Ge/Si islands due to strain relaxation by interdiffusion Applied Physics Letters. 77: 1623-1625. DOI: 10.1063/1.1309027 |
0.302 |
|
| 2000 |
Chen Y, Ohlberg DAA, Medeiros-Ribeiro G, Chang YA, Williams RS. Self-assembled growth of epitaxial erbium disilicide nanowires on silicon (001) Applied Physics Letters. 76: 4004-4006. DOI: 10.1063/1.126848 |
0.316 |
|
| 2000 |
Kamins TI, Williams RS, Chen Y, Chang Y-, Chang YA. Chemical vapor deposition of Si nanowires nucleated by TiSi2 islands on Si Applied Physics Letters. 76: 562-564. DOI: 10.1063/1.125852 |
0.336 |
|
| 2000 |
Briggs GAD, Basile DP, Medeiros-Ribeiro G, Kamins TI, Ohlberg DAA, Williams RS. The incommensurate nature of epitaxial titanium disilicide islands on Si(001) Surface Science. 457: 147-156. DOI: 10.1016/S0039-6028(00)00347-2 |
0.33 |
|
| 1999 |
Kamins TI, Williams RS, Basile DP. Self-aligning of self-assembled Ge islands on Si(001) Nanotechnology. 10: 117-121. DOI: 10.1088/0957-4484/10/2/302 |
0.317 |
|
| 1999 |
Kamins TI, Medeiros-Ribeiro G, Ohlberg DAA, Williams RS. Evolution of Ge islands on Si(001) during annealing Journal of Applied Physics. 85: 1159-1171. DOI: 10.1063/1.369255 |
0.313 |
|
| 1999 |
Medeiros-Ribeiro G, Ohlberg DAA, Bowler DR, Tanner RE, Briggs GAD, Williams RS. Titanium disilicide nanostructures: two phases and their surfaces Surface Science. 431: 116-127. DOI: 10.1016/S0039-6028(99)00434-3 |
0.319 |
|
| 1998 |
Ren JZ, Rose GA, Williams RS, Booth CH, Shuh DK. Atomic structure and phase transitions in disordered Ti1−xGaxN thin films grown by pulsed laser deposition Journal of Applied Physics. 83: 7613-7617. DOI: 10.1063/1.367877 |
0.591 |
|
| 1998 |
Kamins TI, Briggs GAD, Williams RS. Influence of HCl on the chemical vapor deposition and etching of Ge islands on Si(001) Applied Physics Letters. 73: 1862-1864. DOI: 10.1063/1.122307 |
0.322 |
|
| 1997 |
Kamins TI, Williams RS. Lithographic positioning of self-assembled Ge islands on Si(001) Applied Physics Letters. 71: 1201-1203. DOI: 10.1063/1.119625 |
0.302 |
|
| 1997 |
Feiler D, Williams RS, Talin AA, Yoon H, Goorsky MS. Pulsed laser deposition of epitaxial AlN, GaN, and InN thin films on sapphire(0001) Journal of Crystal Growth. 171: 12-20. DOI: 10.1016/S0022-0248(96)00284-9 |
0.303 |
|
| 1995 |
Ohlberg DAA, Rose G, Ren J, Williams RS. Low Temperature Film Growth by Supersonic Jets of CBr 4 Mrs Proceedings. 388. DOI: 10.1557/Proc-388-233 |
0.303 |
|
| 1995 |
Siebentritt S, Treece RE, Williams RS. Properties of silicon‐tin alloys prepared by pulsed laser deposition Journal of Applied Physics. 78: 3915-3919. DOI: 10.1063/1.359909 |
0.316 |
|
| 1995 |
Ngo TT, Williams RS. Kinetic routes to the growth of monodisperse islands Applied Physics Letters. 66: 1906-1908. DOI: 10.1063/1.113317 |
0.3 |
|
| 1994 |
Talin AA, Ngo T, Williams RS, Morgan BA, Ring KM, Kavanagh KL. Lateral Variation in the Schottky Barrier Height and Observation of Critical Lengths at Au/PtSi/(100)Si and Au/(100)GaAs Diodes Mrs Proceedings. 337. DOI: 10.1557/Proc-337-319 |
0.348 |
|
| 1993 |
Talin AA, Ohlberg DAA, Williams RS, Sullivan P, Koutselas I, Williams B, Kavanagh KL. Time dependent ballistic electron emission microscopy studies of a Au/(100)GaAs interface with a native oxide diffusion barrier Applied Physics Letters. 62: 2965-2967. DOI: 10.1063/1.109158 |
0.308 |
|
| 1993 |
Ngo T, Brandt L, Williams RS, Kaesz HD. Scanning tunneling microscopy study of platinum deposited on graphite by metalorganic chemical vapor deposition Surface Science. 291: 411-417. DOI: 10.1016/0039-6028(93)90458-V |
0.315 |
|
| 1992 |
Yuan H, Williams RS. The Growth and Characterization of Germanium-Carbon Alloy Thin Films Mrs Proceedings. 270: 91. DOI: 10.1557/Proc-270-91 |
0.308 |
|
| 1992 |
Charatan RM, Williams RS. Initial stages of the formation of the Au/GaAs(001) interface: A low‐energy ion scattering study Journal of Applied Physics. 72: 5226-5232. DOI: 10.1063/1.352355 |
0.337 |
|
| 1992 |
Tong WM, Snyder EJ, Williams RS, Yanase A, Segawa Y, Anderson MS. Atomic force microscope studies of CuCl island formation on CaF2(111) substrates Surface Science. 277. DOI: 10.1016/0167-2584(92)90135-R |
0.314 |
|
| 1991 |
Snyder EJ, Anderson MS, Tong WM, Williams RS, Anz SJ, Alvarez MM, Rubin Y, Diederich FN, Whetten RL. Atomic Force Microscope Studies of Fullerene Films: Highly Stable C60 fcc (311) Free Surfaces. Science (New York, N.Y.). 253: 171-3. PMID 17779132 DOI: 10.1126/Science.253.5016.171 |
0.327 |
|
| 1991 |
Baugh DA, Talin AA, Williams RS, Kuo TC, Wang KL. Phase stability versus the lattice mismatch of (100)Co1-xGax thin films on (100)GaAs Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 9: 2154-2157. DOI: 10.1116/1.585756 |
0.415 |
|
| 1990 |
Kim YK, Baugh DA, Shuh DK, Williams RS, Sadwick LP, Wang KL. Structural and chemical stability of thin films of Pt-Ga intermetallic compounds of GaAs (001) Journal of Materials Research. 5: 2139-2151. DOI: 10.1557/Jmr.1990.2139 |
0.657 |
|
| 1990 |
Williams RS, Daley RS, Huang JH, Charatan RM. Initial stages of metal/semiconductor interface formation: Au and Ag on Si(111) Applied Surface Science. 41: 70-74. DOI: 10.1016/0169-4332(89)90035-4 |
0.35 |
|
| 1990 |
Daley RS, Charatan RM, Williams RS. An investigation of the Si(111)−(√3 × √3)R30°−Ag surface by Li+ impact collision ion scattering spectroscopy Surface Science. 240: 136-150. DOI: 10.1016/0039-6028(90)90737-S |
0.336 |
|
| 1989 |
Shuh DK, Kim YK, Williams RS. A bolt‐on deposition source for ultrahigh vacuum growth of intermetallic compound films Journal of Vacuum Science and Technology. 7: 2813-2814. DOI: 10.1116/1.576186 |
0.302 |
|
| 1989 |
Chen YJ, Kaesz HD, Kim YK, Müller HJ, Williams RS, Xue Z. Chemical vapor deposition of CoGa and PtGa2 thin films from mixed-metalorganometallic compounds Applied Physics Letters. 55: 2760-2762. DOI: 10.1063/1.102370 |
0.316 |
|
| 1988 |
Huang JH, Williams RS. Surface-structure analysis of Au overlayers on Si by impact-collision ion-scattering spectroscopy: √3×√3 and 6×6 Si(111)/Au Physical Review B. 38: 4022-4032. PMID 9946777 DOI: 10.1103/Physrevb.38.4022 |
0.318 |
|
| 1988 |
Sadwick LP, Wang KL, Shuh DK, Kim YK, Williams RS. Thermodynamically Stable Conducting Films of Intermetallic PtGa2 on Gallium Arsenide Mrs Proceedings. 144: 595. DOI: 10.1557/Proc-144-595 |
0.446 |
|
| 1988 |
Kaesz HD, Williams RS, Hicks RF, Chen YA, Xue Z, Xu D, Shuh DK, Thridandamt H. Low-Temperature Organometallic Chemical Vapor Deposition of Transition Metals Mrs Proceedings. 131. DOI: 10.1557/Proc-131-395 |
0.338 |
|
| 1988 |
Williams RS, Shuh DK, Segawa Y. Growth and luminescence spectroscopy of a CuCl quantum well structure Journal of Vacuum Science and Technology. 6: 1950-1952. DOI: 10.1116/1.575212 |
0.324 |
|
| 1988 |
Huang JH, Williams RS. The atomic structures of the Si(111)‐√3×√3‐ and ‐6×6‐Au surfaces studied by low‐energy ion scattering Journal of Vacuum Science and Technology. 6: 689-691. DOI: 10.1116/1.575154 |
0.313 |
|
| 1988 |
Koplitz LV, Shuh DK, Chen Y, Williams RS, Zink JI. Laser‐driven chemical vapor deposition of platinum at atmospheric pressure and room temperature fromCpPt(CH3)3 Applied Physics Letters. 53: 1705-1707. DOI: 10.1063/1.100472 |
0.312 |
|
| 1988 |
Huang JH, Williams RS. Surface structure of Si(111)-5 × 1-Au characterized by impact collision ion scattering spectroscopy Surface Science. 204: 445-454. DOI: 10.1016/0039-6028(88)90225-7 |
0.331 |
|
| 1988 |
Kim S, Williams R. Mixed-basis band structure interpolation scheme applied to the rocksalt structure compounds TiC, TIN and TiO Journal of Physics and Chemistry of Solids. 49: 1307-1315. DOI: 10.1016/0022-3697(88)90213-2 |
0.514 |
|
| 1987 |
Kim S, Williams RS. Semiempirical band structure and partial density of states of CuCl. Physical Review. B, Condensed Matter. 35: 2823-2826. PMID 9941760 DOI: 10.1103/Physrevb.35.2823 |
0.51 |
|
| 1987 |
Huang JH, Daley RS, Shuh DK, Williams RS. Surface structure of epitaxial Nisi2 grown on Si(001) determined by low energy ion scattering techniques Surface Science. 186: 115-137. DOI: 10.1016/S0039-6028(87)80038-9 |
0.34 |
|
| 1986 |
Huang JH, Williams RS. Surface Structure Investigation of Epitaxial Nickel Silicides on Si(001) Mrs Proceedings. 77: 767. DOI: 10.1557/Proc-77-767 |
0.323 |
|
| 1986 |
Kim S, Williams RS. Summary Abstract: Analysis of chemical bonding in TiC, TiN, and TiO using second‐principles band structures from photoemission data Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 4: 1603-1603. DOI: 10.1116/1.573518 |
0.51 |
|
| 1986 |
Lince JR, Williams RS. Comparison of chemically inert and reactive metal-compound-semiconductor interfaces: AuGa2 and gold on GaSb(001) Thin Solid Films. 137: 251-265. DOI: 10.1016/0040-6090(86)90027-1 |
0.347 |
|
| 1986 |
Huang JH, Williams RS. Ion scattering study of the surface structure of epitaxial NiSi2 on Si(001) Solid State Communications. 60: 689-692. DOI: 10.1016/0038-1098(86)90422-9 |
0.323 |
|
| 1985 |
Nelson JG, Gignac WJ, Kim S, Lince JR, Williams RS. Angle-resolved photoemission study of AuGa2 and AuIn2 intermetallic compounds. Physical Review. B, Condensed Matter. 31: 3469-3476. PMID 9936237 DOI: 10.1103/Physrevb.31.3469 |
0.458 |
|
| 1985 |
Kim S, Nelson JG, Williams RS. Mixed-basis band-structure interpolation scheme applied to the fluorite-structure compounds NiSi2, AuAl2, AuGa2, and AuIn2. Physical Review. B, Condensed Matter. 31: 3460-3468. PMID 9936236 DOI: 10.1103/Physrevb.31.3460 |
0.451 |
|
| 1985 |
Davis RF, Williams RS, Kevan SD, Wehner PS, Shirley DA. Angle-resolved photoemission studies of the valence-band structure of stepped crystal surfaces: Cu(S)- Physical Review. B, Condensed Matter. 31: 1997-2004. PMID 9936004 |
0.465 |
|
| 1985 |
Lince JR, Williams RS. AuGa2 on GaSb(001): An epitaxial, thermodynamically stabilized metal/III–V compound semiconductor interface Journal of Vacuum Science & Technology B. 3: 1217-1220. DOI: 10.1116/1.583043 |
0.342 |
|
| 1985 |
Davis RF, Williams RS, Kevan SD, Wehner PS, Shirley DA. Angle-resolved photoemission studies of the valence-band structure of stepped crystal surfaces: Cu(S)-[3(111)×(100)] Physical Review B. 31: 1997-2004. DOI: 10.1103/PhysRevB.31.1997 |
0.468 |
|
| 1984 |
Nelson JG, Lince JR, Gignac WJ, Williams RS. Characterization of the Surface net and Electronic Structure of AuGa2(001) Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 2: 534-537. DOI: 10.1116/1.572439 |
0.304 |
|
| 1983 |
Lince JR, Nelson JG, Williams RS. Epitaxial growth of Ag films on Ge(001) Journal of Vacuum Science & Technology B. 1: 553-557. DOI: 10.1116/1.582597 |
0.33 |
|
| 1983 |
Nelson JG, Gignac WJ, Williams RS, Robey SW, Tobin JG, Shirley DA. Angle-resolved photoelectron spectroscopy investigation of intrinsic surface states on the Ge(001)-(2 × 1) reconstructed surface Physical Review B. 27: 3924-3926. DOI: 10.1103/Physrevb.27.3924 |
0.546 |
|
| 1982 |
Williams RS. Low energy Ar ion bombardment damage of Si, GaAs, and InP surfaces Solid State Communications. 41: 153-156. DOI: 10.1016/0038-1098(82)91056-0 |
0.303 |
|
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