Jae-Woo Park, Ph.D. - Publications
Affiliations: | 2000 | University of Michigan, Ann Arbor, Ann Arbor, MI |
Area:
Electronics and Electrical EngineeringYear | Citation | Score | |||
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2001 | Park J, Pavlidis D, Mohammadi S, Guyaux J-, Garcia J-. Improved emitter transit time using AlGaAs-GaInP composite emitter in GaInP/GaAs heterojunction bipolar transistors Ieee Transactions On Electron Devices. 48: 1297-1303. DOI: 10.1109/16.930642 | 0.508 | |||
2000 | Mohammadi S, Park J-, Pavlidis D, Guyaux J-, Garcia JC. Design optimization and characterization of high-gain GaInP/GaAs HBT distributed amplifiers for high-bit-rate telecommunication Ieee Transactions On Microwave Theory and Techniques. 48: 1038-1044. DOI: 10.1109/22.904742 | 0.479 | |||
2000 | Park J, Mohammadi S, Pavlidis D, Dua C, Guyaux J, Garcia J. Monolithic broadband transimpedance amplifiers and their high frequency small and large signal characteristics using CBE-based GaInP/GaAs HBT technology Solid-State Electronics. 44: 2059-2067. DOI: 10.1016/S0038-1101(00)00074-5 | 0.513 | |||
2000 | Park J, Mohammadi S, Pavlidis D. Impact of Ni/Ge/Au/Ti/Au and Ti/Pt/Au collector metal on GaInP/GaAs HBT characteristics Solid-State Electronics. 44: 1847-1852. DOI: 10.1016/S0038-1101(00)00030-7 | 0.472 | |||
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