Year |
Citation |
Score |
2023 |
Liu F, Golani P, Truttmann TK, Evangelista I, Smeaton MA, Bugallo D, Wen J, Manjeshwar AK, May SJ, Kourkoutis LF, Janotti A, Koester SJ, Jalan B. Doping the Undopable: Hybrid Molecular Beam Epitaxy Growth, n-Type Doping, and Field-Effect Transistor Using CaSnO. Acs Nano. PMID 37638732 DOI: 10.1021/acsnano.3c04003 |
0.752 |
|
2022 |
Capman NSS, Zhen XV, Nelson JT, Chaganti VRSK, Finc RC, Lyden MJ, Williams TL, Freking M, Sherwood GJ, Bühlmann P, Hogan CJ, Koester SJ. Machine Learning-Based Rapid Detection of Volatile Organic Compounds in a Graphene Electronic Nose. Acs Nano. PMID 36367841 DOI: 10.1021/acsnano.2c10240 |
0.47 |
|
2021 |
Izquierdo N, Myers JC, Golani P, De Los Santos A, Seaton N, Koester SJ, Campbell SA. Growth of Black Arsenic Phosphorus Thin Films and its Application for Field-Effect Transistors. Nanotechnology. PMID 33906169 DOI: 10.1088/1361-6528/abfc09 |
0.732 |
|
2021 |
Namgung S, Koester SJ, Oh SH. Ultraflat Sub-10 Nanometer Gap Electrodes for Two-Dimensional Optoelectronic Devices. Acs Nano. PMID 33625831 DOI: 10.1021/acsnano.0c10759 |
0.308 |
|
2020 |
Golani P, Yun H, Ghosh S, Wen J, Mkhoyan A, Koester SJ. Ambipolar transport in van der waals black arsenic field effect transistors. Nanotechnology. PMID 32544901 DOI: 10.1088/1361-6528/Ab9D40 |
0.75 |
|
2020 |
Yun H, Ghosh S, Golani P, Koester SJ, Mkhoyan KA. Layer-Dependence of Dielectric Response and Water-Enhanced Ambient Degradation of Highly-Anisotropic Black As. Acs Nano. PMID 32310631 DOI: 10.1021/Acsnano.0C01506 |
0.728 |
|
2020 |
Stephan AW, Koester SJ. Spin Hall MTJ Devices for Advanced Neuromorphic Functions Ieee Transactions On Electron Devices. 67: 487-492. DOI: 10.1109/Ted.2019.2959732 |
0.314 |
|
2020 |
Yarmoghaddam E, Haratipour N, Koester SJ, Rakheja S. A Physics-Based Compact Model for Ultrathin Black Phosphorus FETs—Part II: Model Validation Against Numerical and Experimental Data Ieee Transactions On Electron Devices. 67: 397-405. DOI: 10.1109/Ted.2019.2955651 |
0.391 |
|
2020 |
Yarmoghaddam E, Haratipour N, Koester SJ, Rakheja S. A Physics-Based Compact Model for Ultrathin Black Phosphorus FETs—Part I: Effect of Contacts, Temperature, Ambipolarity, and Traps Ieee Transactions On Electron Devices. 67: 389-396. DOI: 10.1109/Ted.2019.2951662 |
0.378 |
|
2020 |
Chaganti VRSK, Truttmann TK, Liu F, Jalan B, Koester SJ. SrSnO 3 Field-Effect Transistors With Recessed Gate Electrodes Ieee Electron Device Letters. 41: 1428-1431. DOI: 10.1109/Led.2020.3011058 |
0.391 |
|
2020 |
Zhang Y, Su Q, Zhu J, Koirala S, Koester SJ, Wang X. Thickness-dependent thermal conductivity of mechanically exfoliated β -Ga 2 O 3 thin films Applied Physics Letters. 116: 202101. DOI: 10.1063/5.0004984 |
0.317 |
|
2019 |
Ma R, Zhang H, Yoo Y, Degregorio ZP, Jin L, Golani P, Ghasemi Azadani J, Low T, Johns JE, Bendersky LA, Davydov AV, Koester SJ. MoTe Lateral Homojunction Field-Effect Transistors Fabricated using Flux-Controlled Phase Engineering. Acs Nano. PMID 31247141 DOI: 10.1021/Acsnano.9B02785 |
0.73 |
|
2019 |
Hu J, Stecklein G, Deen DA, Su Q, Crowell PA, Koester SJ. Scaling of the Nonlocal Spin and Baseline Resistances in Graphene Lateral Spin Valves Ieee Transactions On Electron Devices. 66: 5003-5010. DOI: 10.1109/Ted.2019.2943350 |
0.326 |
|
2019 |
Robbins MC, Golani P, Koester SJ. Right-Angle Black Phosphorus Tunneling Field Effect Transistor Ieee Electron Device Letters. 40: 1988-1991. DOI: 10.1109/Led.2019.2946763 |
0.322 |
|
2019 |
Wu RJ, Udyavara S, Ma R, Wang Y, Chhowalla M, Birol T, Koester SJ, Neurock M, Mkhoyan KA. Visualizing the metal-
MoS2
contacts in two-dimensional field-effect transistors with atomic resolution Physical Review Materials. 3. DOI: 10.1103/Physrevmaterials.3.111001 |
0.321 |
|
2019 |
Yarmoghaddam E, Haratipour N, Koester SJ, Rakheja S. A virtual-source emission-diffusion I-V model for ultra-thin black phosphorus field-effect transistors Journal of Applied Physics. 125: 165706. DOI: 10.1063/1.5064474 |
0.396 |
|
2019 |
Zare Bidoky F, Tang B, Ma R, Jochem KS, Hyun WJ, Song D, Koester SJ, Lodge TP, Frisbie CD. Sub‐3 V ZnO Electrolyte‐Gated Transistors and Circuits with Screen‐Printed and Photo‐Crosslinked Ion Gel Gate Dielectrics: New Routes to Improved Performance Advanced Functional Materials. 30: 1902028. DOI: 10.1002/Adfm.201902028 |
0.305 |
|
2018 |
Yue J, Prakash A, Robbins MC, Koester SJ, Jalan B. Depletion Mode MOSFET using La-doped BaSnO as a Channel Material. Acs Applied Materials & Interfaces. PMID 29897732 DOI: 10.1021/Acsami.8B05229 |
0.449 |
|
2018 |
Liang CD, Ma R, Su Y, O'Hara A, Zhang EX, Alles ML, Wang P, Zhao SE, Pantelides ST, Koester SJ, Schrimpf RD, Fleetwood DM. Defects and Low-Frequency Noise in Irradiated Black Phosphorus MOSFETs With HfO2 Gate Dielectrics Ieee Transactions On Nuclear Science. 65: 1227-1238. DOI: 10.1109/Tns.2018.2828080 |
0.336 |
|
2018 |
Haratipour N, Liu Y, Wu RJ, Namgung S, Ruden PP, Mkhoyan KA, Oh S, Koester SJ. Mobility Anisotropy in Black Phosphorus MOSFETs With HfO2 Gate Dielectrics Ieee Transactions On Electron Devices. 65: 4093-4101. DOI: 10.1109/Ted.2018.2865440 |
0.39 |
|
2018 |
Chaganti VRSK, Prakash A, Yue J, Jalan B, Koester SJ. Demonstration of a Depletion-Mode SrSnO3 n-Channel MESFET Ieee Electron Device Letters. 39: 1381-1384. DOI: 10.1109/Led.2018.2861320 |
0.409 |
|
2018 |
Anugrah Y, Hu J, Stecklein G, Crowell PA, Koester SJ. Independent gate control of injected and detected spin currents in CVD graphene nonlocal spin valves Aip Advances. 8: 015129. DOI: 10.1063/1.5008761 |
0.323 |
|
2018 |
Zhen XV, Swanson EG, Nelson JT, Zhang Y, Su Q, Koester SJ, Bühlmann P. Noncovalent Monolayer Modification of Graphene Using Pyrene and Cyclodextrin Receptors for Chemical Sensing Acs Applied Nano Materials. 1: 2718-2726. DOI: 10.1021/acsanm.8b00420 |
0.45 |
|
2017 |
Barik A, Zhang Y, Grassi R, Nadappuram BP, Edel JB, Low T, Koester SJ, Oh SH. Graphene-edge dielectrophoretic tweezers for trapping of biomolecules. Nature Communications. 8: 1867. PMID 29192277 DOI: 10.1038/S41467-017-01635-9 |
0.464 |
|
2017 |
Zhang Y, Ma R, Zhen X, Kudva Y, Buhlmann P, Koester SJ. Capacitive Sensing of Glucose in Electrolytes Using Graphene Quantum Capacitance Varactors. Acs Applied Materials & Interfaces. PMID 29023095 DOI: 10.1021/Acsami.7B14864 |
0.587 |
|
2017 |
Deng B, Tran V, Xie Y, Jiang H, Li C, Guo Q, Wang X, Tian H, Koester SJ, Wang H, Cha JJ, Xia Q, Yang L, Xia F. Efficient electrical control of thin-film black phosphorus bandgap. Nature Communications. 8: 14474. PMID 28422160 DOI: 10.1038/Ncomms14474 |
0.399 |
|
2017 |
Robbins MC, Namgung S, Oh SH, Koester SJ. Cyclical thinning of black phosphorus with high spatial resolution for heterostructure devices. Acs Applied Materials & Interfaces. PMID 28286947 DOI: 10.1021/Acsami.6B14477 |
0.307 |
|
2017 |
Yoo Y, DeGregorio ZP, Su Y, Koester SJ, Johns JE. In-Plane 2H-1T' MoTe2 Homojunctions Synthesized by Flux-Controlled Phase Engineering. Advanced Materials (Deerfield Beach, Fla.). PMID 28221704 DOI: 10.1002/Adma.201605461 |
0.337 |
|
2017 |
Joung D, Nemilentsau A, Agarwal K, Dai C, Liu C, Su Q, Li J, Low T, Koester SJ, Cho JH. Self-Assembled Three-Dimensional Graphene-Based Polyhedrons Inducing Volumetric Light Confinement. Nano Letters. PMID 28147479 DOI: 10.1021/Acs.Nanolett.6B05412 |
0.323 |
|
2017 |
Haratipour N, Namgung S, Grassi R, Low T, Oh S, Koester SJ. High-Performance Black Phosphorus MOSFETs Using Crystal Orientation Control and Contact Engineering Ieee Electron Device Letters. 38: 685-688. DOI: 10.1109/Led.2017.2679117 |
0.348 |
|
2017 |
Robbins MC, Koester SJ. Black Phosphorus p- and n-MOSFETs With Electrostatically Doped Contacts Ieee Electron Device Letters. 38: 285-288. DOI: 10.1109/Led.2016.2638818 |
0.426 |
|
2017 |
Grassi R, Wu Y, Koester SJ, Low T. Semianalytical model of the contact resistance in two-dimensional semiconductors Physical Review B. 96. DOI: 10.1103/Physrevb.96.165439 |
0.382 |
|
2016 |
Namgung S, Shaver J, Oh SH, Koester SJ. Multimodal Photodiode and Phototransistor Device Based on Two-Dimensional Materials. Acs Nano. 10: 10500-10506. PMID 27934086 DOI: 10.1021/Acsnano.6B06468 |
0.382 |
|
2016 |
Kshirsagar CU, Xu W, Su Y, Robbins MC, Kim CH, Koester SJ. Dynamic Memory Cells Using MoS2 Field-Effect Transistors Demonstrating Femtoampere Leakage Currents. Acs Nano. PMID 27559610 DOI: 10.1021/Acsnano.6B03440 |
0.34 |
|
2016 |
Haratipour N, Namgung S, Oh SH, Koester SJ. Fundamental Limits on the Subthreshold Slope in Schottky Source/Drain Black Phosphorus Field-Effect Transistors. Acs Nano. PMID 26914179 DOI: 10.1021/Acsnano.6B00482 |
0.449 |
|
2016 |
Haratipour N, Koester SJ. Ambipolar Black Phosphorus MOSFETs with Record n-Channel Transconductance Ieee Electron Device Letters. 37: 103-106. DOI: 10.1109/Led.2015.2499209 |
0.403 |
|
2016 |
Özçelik VO, Azadani JG, Yang C, Koester SJ, Low T. Band Alignment of 2D Semiconductors for Designing Heterostructures with Momentum Space Matching Physical Review B. 94: 35125. DOI: 10.1103/Physrevb.94.035125 |
0.319 |
|
2016 |
Stecklein G, Crowell PA, Li J, Anugrah Y, Su Q, Koester SJ. Contact-Induced Spin Relaxation in Graphene Nonlocal Spin Valves Physical Review Applied. 6. DOI: 10.1103/Physrevapplied.6.054015 |
0.304 |
|
2016 |
Su Y, Kshirsagar CU, Robbins MC, Haratipour N, Koester SJ. Symmetric complementary logic inverter using integrated black phosphorus and MoS2 transistors 2d Materials. 3. DOI: 10.1088/2053-1583/3/1/011006 |
0.384 |
|
2015 |
Olson EJ, Ma R, Sun T, Ebrish M, Haratipour N, Min K, Aluru NR, Koester S. Capacitive sensing of intercalated H2O molecules using graphene. Acs Applied Materials & Interfaces. PMID 26502269 DOI: 10.1021/Acsami.5B07731 |
0.327 |
|
2015 |
Wu RJ, Topsakal M, Low T, Robbins MC, Haratipour N, Jeong JS, Wentzcovitch RM, Koester SJ, Mkhoyan KA. Atomic and electronic structure of exfoliated black phosphorus Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 33. DOI: 10.1116/1.4926753 |
0.395 |
|
2015 |
Szabo A, Koester SJ, Luisier M. Ab-initio simulation of van der Waals MoTe<inf>2</inf>-SnS<inf>2</inf> heterotunneling FETs for low-power electronics Ieee Electron Device Letters. 36: 514-516. DOI: 10.1109/Led.2015.2409212 |
0.4 |
|
2015 |
Haratipour N, Robbins MC, Koester SJ. Black Phosphorus p-MOSFETs with 7-nm HfO2 Gate Dielectric and Low Contact Resistance Ieee Electron Device Letters. 36: 411-413. DOI: 10.1109/Led.2015.2407195 |
0.339 |
|
2015 |
Anugrah Y, Robbins MC, Crowell PA, Koester SJ. Determination of the Schottky barrier height of ferromagnetic contacts to few-layer phosphorene Applied Physics Letters. 106. DOI: 10.1063/1.4914978 |
0.316 |
|
2015 |
Youngblood N, Chen C, Koester SJ, Li M. Waveguide-integrated black phosphorus photodetector with high responsivity and low dark current Nature Photonics. 9: 247-252. DOI: 10.1038/Nphoton.2015.23 |
0.424 |
|
2014 |
Ebrish MA, Olson EJ, Koester SJ. Effect of noncovalent basal plane functionalization on the quantum capacitance in graphene Acs Applied Materials and Interfaces. 6: 10296-10303. PMID 24896230 DOI: 10.1021/Am5017057 |
0.349 |
|
2014 |
Youngblood N, Anugrah Y, Ma R, Koester SJ, Li M. Multifunctional graphene optical modulator and photodetector integrated on silicon waveguides. Nano Letters. 14: 2741-6. PMID 24734877 DOI: 10.1021/Nl500712U |
0.362 |
|
2014 |
Li Y, Porter WM, Kshirsagar C, Roth I, Su Y, Reynolds MA, Gerbi BJ, Koester SJ. Fully-depleted silicon-on-insulator devices for radiation dosimetry in cancer therapy Ieee Transactions On Nuclear Science. 61: 3443-3450. DOI: 10.1109/Tns.2014.2365544 |
0.342 |
|
2014 |
Koester SJ, Li M. Waveguide-coupled graphene optoelectronics Ieee Journal On Selected Topics in Quantum Electronics. 20. DOI: 10.1109/Jstqe.2013.2272316 |
0.324 |
|
2014 |
Deen DA, Olson EJ, Ebrish MA, Koester SJ. Graphene-based quantum capacitance wireless vapor sensors Ieee Sensors Journal. 14: 1459-1466. DOI: 10.1109/Jsen.2013.2295302 |
0.319 |
|
2014 |
Haratipour N, Koester SJ. Multi-layer MoTe2 p-channel MOSFETs with high drive current Device Research Conference - Conference Digest, Drc. 171-172. DOI: 10.1109/DRC.2014.6872352 |
0.357 |
|
2014 |
Szabo A, Koester SJ, Luisier M. Metal-dichalcogenide hetero-TFETs: Are they a viable option for low power electronics? Device Research Conference - Conference Digest, Drc. 19-20. DOI: 10.1109/DRC.2014.6872279 |
0.306 |
|
2013 |
Lee Y, Kim D, Cai J, Lauer I, Chang L, Koester SJ, Blaauw D, Sylvester D. Low-Power Circuit Analysis and Design Based on Heterojunction Tunneling Transistors (HETTs) Ieee Transactions On Very Large Scale Integration (Vlsi) Systems. 21: 1632-1643. DOI: 10.1109/Tvlsi.2012.2213103 |
0.345 |
|
2013 |
Su Y, Ebrish MA, Olson EJ, Koester SJ. SnSe2 field-effect transistors with high drive current Applied Physics Letters. 103. DOI: 10.1063/1.4857495 |
0.37 |
|
2013 |
Deen DA, Champlain JG, Koester SJ. Multilayer HfO2/TiO2 gate dielectric engineering of graphene field effect transistors Applied Physics Letters. 103. DOI: 10.1063/1.4818754 |
0.421 |
|
2012 |
Koester SJ, Li H, Li M. Switching energy limits of waveguide-coupled graphene-on-graphene optical modulators Optics Express. 20: 20330-20341. PMID 23037084 DOI: 10.1364/Oe.20.020330 |
0.338 |
|
2012 |
Li H, Anugrah Y, Koester SJ, Li M. Optical absorption in graphene integrated on silicon waveguides Applied Physics Letters. 101. DOI: 10.1063/1.4752435 |
0.344 |
|
2012 |
Koester SJ, Li M. High-speed waveguide-coupled graphene-on-graphene optical modulators Applied Physics Letters. 100. DOI: 10.1063/1.4704663 |
0.38 |
|
2012 |
Ebrish MA, Shao H, Koester SJ. Operation of multi-finger graphene quantum capacitance varactors using planarized local bottom gate electrodes Applied Physics Letters. 100. DOI: 10.1063/1.3698394 |
0.386 |
|
2011 |
Koester SJ. High quality factor graphene varactors for wireless sensing applications Applied Physics Letters. 99. DOI: 10.1063/1.3651334 |
0.372 |
|
2010 |
Koswatta SO, Koester SJ, Haensch W. On the possibility of obtaining MOSFET-like performance and Sub-60-mV/dec swing in 1-D broken-gap tunnel transistors Ieee Transactions On Electron Devices. 57: 3222-3230. DOI: 10.1109/Ted.2010.2079250 |
0.375 |
|
2010 |
Majumdar A, Ouyang C, Koester SJ, Haensch W. Effects of substrate orientation and channel stress on short-channel thin SOI MOSFETs Ieee Transactions On Electron Devices. 57: 2067-2072. DOI: 10.1109/Ted.2010.2052410 |
0.332 |
|
2010 |
Zhang Q, Lu Y, Xing HG, Koester SJ, Koswatta SO. Scalability of atomic-thin-body (ATB) transistors based on graphene nanoribbons Ieee Electron Device Letters. 31: 531-533. DOI: 10.1109/Led.2010.2045100 |
0.37 |
|
2009 |
Majumdar A, Ren Z, Koester SJ, Haensch W. Undoped-body extremely thin SOI MOSFETs with back gates Ieee Transactions On Electron Devices. 56: 2270-2276. DOI: 10.1109/Ted.2009.2028057 |
0.402 |
|
2009 |
Majumdar A, Wang X, Kumar A, Holt JR, Dobuzinsky D, Venigalla R, Ouyang C, Koester SJ, Haensch W. Gate length and performance scaling of undoped-body extremely thin SOI MOSFETs Ieee Electron Device Letters. 30: 413-415. DOI: 10.1109/Led.2009.2014086 |
0.346 |
|
2008 |
Majumdar A, Ren Z, Sleight JW, Dobuzinsky D, Holt JR, Venigalla R, Koester SJ, Haensch W. High-performance undoped-body 8-nm-thin SOI field-effect transistors Ieee Electron Device Letters. 29: 515-517. DOI: 10.1109/Led.2008.920975 |
0.366 |
|
2008 |
Bedell SW, Majumdar A, Ott JA, Arnold J, Fogel K, Koester SJ, Sadana DK. Mobility scaling in short-channel length strained Ge-on-insulator P-MOSFETs Ieee Electron Device Letters. 29: 811-813. DOI: 10.1109/Led.2008.2000713 |
0.349 |
|
2008 |
Chen KN, Krusin-Elbaum L, Newns DM, Elmegreen BG, Cheek R, Rana N, Young AM, Koester SJ, Lam C. Programmable via Using Indirectly Heated Phase-Change Switch for Reconfigurable Logic Applications Ieee Electron Device Letters. 29: 131-133. DOI: 10.1109/Led.2007.912016 |
0.317 |
|
2007 |
Madan A, Jun B, Diestelhorst RM, Appaswamy A, Cressler JD, Schrimpf RD, Fleetwood DM, Marshall PW, Isaacs-Smith T, Williams JR, Koester SJ. The radiation tolerance of strained Si/SiGe n-MODFETs Ieee Transactions On Nuclear Science. 54: 2251-2256. DOI: 10.1109/Tns.2007.907871 |
0.347 |
|
2007 |
Sturm J, Fitzgerald E, Koester S, Kolodzey J, Muroto J, Paul D, Tillack B, Zaima S, Ghyselen B, Takagi S. Papers from the 3rd international SiGe technology and device meeting (Princeton, New Jersey, USA, 15-17 May 2006) (ISTDM 2006) Semiconductor Science and Technology. 22. DOI: 10.1088/0268-1242/22/1/E01 |
0.384 |
|
2006 |
Schow CL, Schares L, Koester SJ, Dehlinger G, John R, Doany FE. A 15-Gb/s 2.4-V optical receiver using a Ge-on-SOI photodiode and a CMOS IC Ieee Photonics Technology Letters. 18: 1981-1983. DOI: 10.1109/Lpt.2006.880770 |
0.342 |
|
2006 |
Koester SJ, Schaub JD, Dehlinger G, Chu JO. Germanium-on-SOI infrared detectors for integrated photonic applications Ieee Journal On Selected Topics in Quantum Electronics. 12: 1489-1502. DOI: 10.1109/Jstqe.2006.883160 |
0.404 |
|
2006 |
Frank MM, Koester SJ, Copel M, Ott JA, Paruchuri VK, Shang H, Loesing R. Hafnium oxide gate dielectrics on sulfur-passivated germanium Applied Physics Letters. 89. DOI: 10.1063/1.2338751 |
0.368 |
|
2005 |
Koester SJ, Saenger KL, Chu JO, Ouyang QC, Ott JA, Canaperi DF, Tornello JA, Jahnes CV. Improved DC and RF performance in Si/SiGe n-MODFETs with ion-implanted buried p-well doping Ieee Electron Device Letters. 26: 817-819. DOI: 10.1109/Led.2005.858103 |
0.366 |
|
2004 |
Dehlinger G, Koester SJ, Schaub JD, Chu JO, Ouyang QC, Grill A. High-speed Germanium-on-SOI lateral PIN photodiodes Ieee Photonics Technology Letters. 16: 2547-2549. DOI: 10.1109/Lpt.2004.835631 |
0.317 |
|
2003 |
Freeman GG, Jagannathan B, Zamdmer N, Groves R, Singh R, Tretiakov Y, Kumar M, Johnson JB, Plouchart JO, Greenberg DR, Koester SJ, Schaub JD. Integrated SiGe and Si device capabilities and trends for multi-gigahertz applications International Journal of High Speed Electronics and Systems. 13: 175-219. DOI: 10.1142/S0129156403001570 |
0.373 |
|
2002 |
Huang L, Chu JO, Goma SA, D'Emic CP, Koester SJ, Canaperi DF, Mooney PM, Cordes SA, Speidell JL, Anderson RM, Wong H-P. Electron and hole mobility enhancement in strained SOI by wafer bonding Ieee Transactions On Electron Devices. 49: 1566-1571. DOI: 10.1109/Ted.2002.802675 |
0.383 |
|
2001 |
Huang LJ, Chu JO, Canaperi DF, D’Emic CP, Anderson RM, Koester SJ, Wong H-P. SiGe-on-insulator prepared by wafer bonding and layer transfer for high-performance field-effect transistors Applied Physics Letters. 78: 1267-1269. DOI: 10.1063/1.1342212 |
0.376 |
|
2000 |
Lu W, Koester SJ, Wang X, Chu JO, Ma T, Adesida I. Comparative study of self-aligned and nonself-aligned SiGe p-metal–oxide–semiconductor modulation-doped field effect transistors with nanometer gate lengths Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 18: 3488. DOI: 10.1116/1.1321286 |
0.401 |
|
2000 |
Koester SJ, Hammond R, Chu JO. Extremely high transconductance Ge/Si0.4Ge0.6 p-MODFET's grown by UHV-CVD Ieee Electron Device Letters. 21: 110-112. DOI: 10.1109/55.823572 |
0.304 |
|
2000 |
Lu W, Kuliev A, Koester S, Wang X, Chu J, Ma T, Adesida I. High performance 0.1 μm gate-length p-type SiGe MODFET's and MOS-MODFET's Ieee Transactions On Electron Devices. 47: 1645-1652. DOI: 10.1109/16.853043 |
0.368 |
|
2000 |
Koester SJ, Chu JO, Webster CS. High-frequency noise performance of SiGe p-channel MODFETs Electronics Letters. 36: 674-675. DOI: 10.1049/El:20000512 |
0.336 |
|
1999 |
Lu W, Wang X, Hammond R, Kuliev A, Koester S, Chu J, Ismail K, Ma T, Adesida I. p-Type SiGe transistors with low gate leakage using SiN gate dielectric Ieee Electron Device Letters. 20: 514-516. DOI: 10.1109/55.791927 |
0.394 |
|
1999 |
Hammond R, Koester SJ, Chu JO. High-performance 0.1μm gate-length Ge/Si0.4Ge0.6 p-channel MODFETs Electronics Letters. 35: 1590-1591. DOI: 10.1049/El:19991036 |
0.415 |
|
1999 |
Koester SJ, Chu JO, Groves RA. High-fT n-MODFETs fabricated on Si/SiGe heterostructures grown by UHV-CVD Electronics Letters. 35: 86-87. DOI: 10.1049/El:19990075 |
0.389 |
|
1997 |
Koester SJ, Ismail K, Chu JO. Determination of spin- and valley-split energy levels in strained Si quantum wells Semiconductor Science and Technology. 12: 384-388. DOI: 10.1088/0268-1242/12/4/007 |
0.32 |
|
1997 |
Koester SJ, Ismail K, Lee KY, Chu JO. Negative differential conductance in strained Si point contacts and wires Applied Physics Letters. 71: 1528-1530. DOI: 10.1063/1.119956 |
0.373 |
|
1997 |
Koester SJ, Ismail K, Lee KY, Chu JO. Negative differential conductance in lateral double-barrier transistors fabricated in strained Si quantum wells Applied Physics Letters. 70: 2422-2424. DOI: 10.1063/1.118891 |
0.394 |
|
1993 |
Koester SJ, Bolognesi CR, Rooks MJ, Hu EL, Kroemer H. Quantized conductance of ballistic constrictions in InAs/AlSb quantum wells Applied Physics Letters. 62: 1373-1375. DOI: 10.1063/1.108683 |
0.447 |
|
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