Year |
Citation |
Score |
2023 |
Yang J, Chen K, Wang D, Liu T, Sun X, Wang Q, Huang Z, Pan Z, Xu S, Wang C, Wu C, Xu M, Zhang DW. Impact of Stress and Dimension on Nanosheet Deformation during Channel Release of Gate-All-Around Device. Micromachines. 14. PMID 36985018 DOI: 10.3390/mi14030611 |
0.302 |
|
2013 |
Ho B, Sun X, Shin C, Liu TK. Design Optimization of Multigate Bulk MOSFETs Ieee Transactions On Electron Devices. 60: 28-33. DOI: 10.1109/Ted.2012.2224870 |
0.687 |
|
2012 |
Ho B, Sun X, Xu N, Sako T, Maekawa K, Tomoyasu M, Akasaka Y, Bonnin O, Nguyen B, Liu TK. First Demonstration of Quasi-Planar Segmented-Channel MOSFET Design for Improved Scalability Ieee Transactions On Electron Devices. 59: 2273-2276. DOI: 10.1109/Ted.2012.2201721 |
0.671 |
|
2011 |
Sun X, Moroz V, Damrongplasit N, Shin C, Liu TJK. Variation study of the planar ground-plane bulk MOSFET, SOI FinFET, and trigate bulk MOSFET designs Ieee Transactions On Electron Devices. 58: 3294-3299. DOI: 10.1109/Ted.2011.2161479 |
0.6 |
|
2011 |
Shin C, Damrongplasit N, Sun X, Tsukamoto Y, Nikolic B, Liu TJK. Performance and yield benefits of quasi-planar bulk CMOS technology for 6-T SRAM at the 22-nm node Ieee Transactions On Electron Devices. 58: 1846-1854. DOI: 10.1109/Ted.2011.2139213 |
0.586 |
|
2010 |
Sun X, Liu TK. Spacer Gate Lithography for Reduced Variability Due to Line Edge Roughness Ieee Transactions On Semiconductor Manufacturing. 23: 311-315. DOI: 10.1109/Tsm.2010.2046050 |
0.384 |
|
2009 |
Sun X, Liu TK. Scale-Length Assessment of the Trigate Bulk MOSFET Design Ieee Transactions On Electron Devices. 56: 2840-2842. DOI: 10.1109/Ted.2009.2030711 |
0.375 |
|
2009 |
Shin C, Sun X, Liu TK. Study of Random-Dopant-Fluctuation (RDF) Effects for the Trigate Bulk MOSFET Ieee Transactions On Electron Devices. 56: 1538-1542. DOI: 10.1109/Ted.2009.2020321 |
0.616 |
|
2008 |
Sun X, Lu Q, Moroz V, Takeuchi H, Gebara G, Wetzel J, Ikeda S, Shin C, King Liu TJ. Tri-gate bulk MOSFET design for CMOS scaling to the end of the roadmap Ieee Electron Device Letters. 29: 491-493. DOI: 10.1109/Led.2008.919795 |
0.696 |
|
2007 |
Sun X, Lu Q, Takeuchi H, Balasubramanian S, King Liu TJ. Selective enhancement of SiO2 etch rate by Ar-ion implantation for improved etch depth control Electrochemical and Solid-State Letters. 10: 89-91. DOI: 10.1149/1.2748634 |
0.663 |
|
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