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Charles Andrew Evans, Jr. - Publications

Affiliations: 
1970-1978 Chemistry University of Illinois, Urbana-Champaign, Urbana-Champaign, IL 
Area:
secondary ion mass spectrometry
Website:
https://www.legacy.com/obituaries/mercurynews/obituary.aspx?n=charles-andrew-evans-drew&pid=188851897
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63 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
1983 Wilson RG, Sadana DK, Sigmon TW, Evans CA. Correlation among secondary ion mass spectrometry, cross‐section transmission electron microscopy, and Rutherford backscattering analyses for defect density and depth distribution determination Applied Physics Letters. 43: 549-551. DOI: 10.1063/1.94415  0.427
1983 Wilson RG, Jamba DM, Deline VR, Evans CA, Park YS. Depth distributions of sulfur implanted into GaAs as a function of ion energy, ion fluence, and annealing temperature and encapsulation Journal of Applied Physics. 54: 3849-3854. DOI: 10.1063/1.332609  0.389
1983 Wilson RG, Evans CA, Norberg JC, Hopkins CG, Park YS. Redistribution of chromium under annealed sulfur implants into chromium-doped GaAs Journal of Applied Physics. 54: 6868-6874. DOI: 10.1063/1.331991  0.373
1983 Odom RW, Furman BK, Evans CA, Bryson CE, Petersen WA, Kelly MA, Wayne DH. Quantitative image acquisition system for ion microscopy based on the resistive anode encoder Analytical Chemistry. 55: 574-578. DOI: 10.1021/Ac00254A036  0.309
1982 Drummond TJ, Lyons WG, Fischer R, Thorne RE, Morkoc H, Hopkins CG, Evans CA. Si INCORPORATION IN Al//xGa//1// minus //xAs GROWN BY MOLECULAR BEAM EPITAXY. Journal of Vacuum Science & Technology. 21: 957-960. DOI: 10.1116/1.571873  0.348
1981 Magee TJ, Leung C, Kawayoshi H, Furman BK, Evans CA. The role of stabilized back‐surface damage in controlling internal SiOx nucleation and denudation zones in Si Applied Physics Letters. 39: 631-633. DOI: 10.1063/1.92829  0.421
1981 Magee TJ, Leung C, Kawayoshi H, Palkuti LJ, Furman BK, Evans CA, Christel LA, Gibbons JF, Day DS. Recoil oxygen implants and thermal redistribution of oxygen in through‐oxide arsenic‐implanted Si Applied Physics Letters. 39: 564-566. DOI: 10.1063/1.92795  0.408
1981 Magee TJ, Leung C, Kawayoshi H, Ormond R, Furman BK, Evans CA, Day DS. Thermal redistribution of oxygen during solid‐phase regrowth of arsenic‐implanted amorphized Si Applied Physics Letters. 39: 413-415. DOI: 10.1063/1.92756  0.393
1981 Magee TJ, Leung C, Kawayoshi H, Furman B, Evans CA, Day DS. Redistribution of oxygen within damage regions of boron‐implanted silicon Applied Physics Letters. 39: 260-262. DOI: 10.1063/1.92665  0.354
1981 Magee TJ, Kawayoshi H, Ormond RD, Christel LA, Gibbons JF, Hopkins CG, Evans CA, Day DS. Stoichiometric disturbances in ion implanted GaAs and redistribution of Cr during annealing Applied Physics Letters. 39: 906-908. DOI: 10.1063/1.92602  0.402
1981 Magee TJ, Ormond RD, Evans CA, Blattner RJ, Malbon RM, Day DS, Sankaran R. Front surface control of Cr redistribution and formation of stable Cr depletion channels in GaAs Applied Physics Letters. 38: 559-561. DOI: 10.1063/1.92412  0.308
1981 Magee TJ, Leung C, Kawayoshi H, Furman BK, Evans CA. Gettering of mobile oxygen and defect stability within back‐surface damage regions in Si Applied Physics Letters. 38: 891-893. DOI: 10.1063/1.92218  0.383
1981 Magee TJ, Leung C, Kawayoshi H, Furman B, Hopkins CG, Evans CA. LOW-TEMPERATURE REDISTRIBUTION AND GETTERING OF OXYGEN IN SILICON. Journal of Applied Physics. 52: 5392-5394. DOI: 10.1063/1.329403  0.435
1981 Williams P, Deline VR, Evans CA, Katz W. Reply to "Comment on 'A unified explanation for secondary ion yields' and 'Mechanism of the SIMS matrix effect"' Journal of Applied Physics. 52: 530-532. DOI: 10.1063/1.328452  0.322
1980 Magee TJ, Lee KS, Ormond R, Evans CA, Blattner RJ, Hopkins C. Low‐temperature redistribution of Cr in boron‐implanted GaAs in the absence of encapsulant stress Applied Physics Letters. 37: 635-637. DOI: 10.1063/1.92003  0.323
1980 Magee TJ, Hung J, Deline VR, Evans CA. Low-temperature gettering of Cr in GaAs Applied Physics Letters. 37: 53-55. DOI: 10.1063/1.91845  0.308
1980 Magee TJ, Lee KS, Ormond R, Blattner RJ, Evans CA. Annealing of damage and redistribution of Cr in boron‐implanted Si3N4‐capped GaAs Applied Physics Letters. 37: 447-449. DOI: 10.1063/1.91734  0.339
1980 Nissim YI, Gibbons JF, Evans CA, Deline VR, Norberg JC. Thermal diffusion of tin in GaAs from a spin‐on SnO2/SiO2 source Applied Physics Letters. 37: 89-91. DOI: 10.1063/1.91714  0.32
1980 Morkoç H, Hopkins C, Evans CA, Cho AY. Chromium and tellurium redistribution in GaAs and Al0.3Ga0.7As grown by molecular beam epitaxy Journal of Applied Physics. 51: 5986-5991. DOI: 10.1063/1.327519  0.348
1980 Baker JE, Blattner RJ, Nadel S, Evans CA, Nowicki RS. Thermal annealing study of Au/TiW metallization on silicon Thin Solid Films. 69: 53-62. DOI: 10.1016/0040-6090(80)90203-5  0.339
1980 Williams P, Katz W, Evans CA. Towards A Universal Model For Sputtered Ion Emission Nuclear Instruments and Methods. 168: 373-377. DOI: 10.1016/0029-554X(80)91278-1  0.399
1980 Katz W, Williams P, Evans CA. A correlation of the average sample mass and the sputtering yield in SIMS Surface and Interface Analysis. 2: 120-121. DOI: 10.1002/Sia.740020308  0.316
1979 Chelgren JE, Katz W, Deline VR, Evans CA, Blattner RJ, Williams P. Surface cesium concentrations in cesium‐ion‐bombarded elemental and compound targets Journal of Vacuum Science and Technology. 16: 324-327. DOI: 10.1116/1.569939  0.367
1979 Magee TJ, Peng J, Hong JD, Deline VR, Evans CA. Alloying of Au layers and redistribution of Cr in GaAs Applied Physics Letters. 35: 615-617. DOI: 10.1063/1.91227  0.327
1979 Evans CA, Deline VR, Sigmon TW, Lidow A. Redistribution of Cr during annealing of 80Se‐implanted GaAs Applied Physics Letters. 35: 291-293. DOI: 10.1063/1.91075  0.354
1979 Magee TJ, Peng J, Hong JD, Evans CA, Deline VR, Malbon RM. Back surface gettering and Cr out‐diffusion in VPE GaAs layers Applied Physics Letters. 35: 277-279. DOI: 10.1063/1.91070  0.31
1979 Tsai MY, Day DS, Streetman BG, Williams P, Evans CA. Recrystallization of implanted amorphous silicon layers. II. Migration of fluorine in BF + 2 -implanted silicon Journal of Applied Physics. 50: 188-192. DOI: 10.1063/1.325689  0.334
1979 Tsai MY, Streetman BG, Deline VR, Evans CA. Gallium distribution and electrical activation in Ga+-implanted Si Journal of Electronic Materials. 8: 111-126. DOI: 10.1007/Bf02663267  0.379
1979 Magee TJ, Peng J, Hong JD, Evans CA, Deline VR. Gettering of Cr in GaAs by back surface mechanical damage Physica Status Solidi (a). 55: 169-172. DOI: 10.1002/Pssa.2210550118  0.321
1979 Magge TJ, Peng J, Hong JD, Katz W, Evans CA. Back surface gettering of Au in GaAs Physica Status Solidi (a). 55: 161-168. DOI: 10.1002/Pssa.2210550117  0.379
1979 Lai S‐F, Evans CA. Electrohydrodynamic ionization mass spectrometry: Pyrimidines, purines, nucleosides and nucleotides Journal of Mass Spectrometry. 6: 10-14. DOI: 10.1002/Bms.1200060103  0.408
1978 Stimpson BP, Evans CA. Electrohydrodynamic ionization mass spectrometry of biochemical materials Journal of Mass Spectrometry. 5: 52-63. PMID 623894 DOI: 10.1002/Bms.1200050111  0.408
1978 Deline VR, Katz W, Evans CA, Williams P. Mechanism of the SIMS matrix effect Applied Physics Letters. 33: 832-835. DOI: 10.1063/1.90546  0.349
1978 Deline VR, Evans CA, Williams P. A unified explanation for secondary ion yields Applied Physics Letters. 33: 578-580. DOI: 10.1063/1.90466  0.411
1978 Gat A, Gibbons JF, Magee TJ, Peng J, Williams P, Deline V, Evans CA. Use of a scanning cw Kr laser to obtain diffusion-free annealing of B-implanted silicon Applied Physics Letters. 33: 389-391. DOI: 10.1063/1.90386  0.354
1978 Lidow A, Gibbons JF, Deline VR, Evans CA. Solid solubility of selenium in GaAs as measured by secondary ion mass spectrometry Applied Physics Letters. 32: 572-573. DOI: 10.1063/1.90134  0.442
1978 Gat A, Gibbons JF, Magee TJ, Peng J, Deline VR, Williams P, Evans CA. Physical and electrical properties of laser‐annealed ion‐implanted silicon Applied Physics Letters. 32: 276-278. DOI: 10.1063/1.90046  0.322
1978 Lidow A, Gibbons JF, Deline VR, Evans CA. Fast diffusion of elevated‐temperature ion‐implanted Se in GaAs as measured by secondary ion mass spectrometry Applied Physics Letters. 32: 149-151. DOI: 10.1063/1.89963  0.416
1978 Tsai MY, Streetman BG, Williams P, Evans CA. Anomalous migration of fluorine and electrical activation of boron in BF+2‐implanted silicon Applied Physics Letters. 32: 144-147. DOI: 10.1063/1.89961  0.345
1978 Lidow A, Gibbons JF, Deline VR, Evans CA. Ion‐implanted selenium profiles in GaAs as measured by secondary ion mass spectrometry Applied Physics Letters. 32: 15-17. DOI: 10.1063/1.89829  0.406
1978 Stimpson BP, Simons DS, Evans CA. Mass spectrometry of solvated ions generated directly from the liquid phase by electrohydrodynamic ionization The Journal of Physical Chemistry. 82: 660-670. DOI: 10.1021/J100495A009  0.374
1978 Stimpson BP, Evans CA. Electrohydrodynamic ionization mass spectrometry: Review of instrumentation, mechanisms and applications Journal of Electrostatics. 5: 411-430. DOI: 10.1016/0304-3886(78)90034-7  0.365
1978 Williams P, Evans CA. Anomalous enhancement of negative sputtered ion emission by oxygen Surface Science. 78: 324-338. DOI: 10.1016/0039-6028(78)90084-5  0.366
1978 Liau ZL, Lau SS, Nicolet MA, Mayer JW, Blattner RJ, Williams P, Evans CA. Kinetic aspects of solid-phase epitaxial growth of amorphous Si Nuclear Instruments and Methods. 149: 623-627. DOI: 10.1016/0029-554X(78)90940-0  0.354
1978 Williams P, Lewis RK, Evans CA, Hanley PR. Improvements in the chemistry of secondary ion mass spectrometry — negative ion techniques Nuclear Instruments and Methods. 149: 567-567. DOI: 10.1016/0029-554X(78)90928-X  0.426
1978 Lai SF, Evans CA. Electrohydrodynamic ionization mass spectrometry of sulfonates Journal of Mass Spectrometry. 13: 733-734. DOI: 10.1002/Oms.1210131213  0.417
1977 Linton RW, Williams P, Evans CA, Natusch DF. Determination of the surface predominance of toxic elements in airborne particles by ion microprobe mass spectrometry and Auger electron spectrometry. Analytical Chemistry. 49: 1514-21. PMID 900488 DOI: 10.1021/Ac50019A015  0.4
1977 Williams P, Evans CA. Depth profile detection limit of 3×1015 atom cm−3 for As in Si using Cs+ bombardment negative secondary ion mass spectrometry Applied Physics Letters. 30: 559-561. DOI: 10.1063/1.89259  0.432
1977 Harris JM, Blattner RJ, Ward ID, Evans CA, Fraser HL, Nicolet MA, Ramiller CL. Solid‐phase crystallization of Si films in contact with Al layers Journal of Applied Physics. 48: 2897-2904. DOI: 10.1063/1.324100  0.321
1977 Williams P, Lewis RK, Evans CA, Hanley PR. Evaluation of a Cesium Primary Ion Source on an Ion Microprobe Mass Spectrometer Analytical Chemistry. 49: 1399-1403. DOI: 10.1021/Ac50017A027  0.42
1976 Williams P, Evans CA, Grossbeck ML, Birnbaum HK. Ion Microprobe Analysis for Niobium Hydride in Hydrogen-Embrittled Niobium. Analytical Chemistry. 48: 964-968. DOI: 10.1021/Ac60371A017  0.33
1976 Simons DS, Baker JE, Evans CA. Evaluation of the local thermal equilibrium model for quantitative secondary ion mass spectrometric analysis Analytical Chemistry. 48: 1341-1348. DOI: 10.1021/Ac50003A021  0.379
1976 Williams P, Evans CA. A simple electronic aperture for rastered-beam depth profiles International Journal of Mass Spectrometry and Ion Physics. 22: 327-331. DOI: 10.1016/0020-7381(76)80092-7  0.355
1976 Grossbeck ML, Williams P, Evans CA, Birnbaum HK. Application of ion probe analysis to studies of hydrogen behavior in solids Physica Status Solidi (a). 34. DOI: 10.1002/Pssa.2210340245  0.32
1975 Nakamura K, Nicolet M, Mayer JW, Blattner RJ, Evans CA. Interaction of Al layers with polycrystalline Si Journal of Applied Physics. 46: 4678-4684. DOI: 10.1063/1.321530  0.306
1974 Chu WK, Nicolet MA, Mayer JW, Evans CA. Comparison of backscattering spectrometry and secondary ion mass spectrometry by analysis of tantalum pentoxide layers Analytical Chemistry. 46: 2136-2141. DOI: 10.1021/Ac60350A039  0.424
1974 Blattner RJ, Baker JE, Evans CA. Simple ion probe attachment for existing mass spectrometers Analytical Chemistry. 46: 2171-2176. DOI: 10.1021/Ac60350A013  0.41
1974 Simons DS, Colby BN, Evans CA. Electrohydrodynamic ionization mass spectrometry - the ionization of liquid glycerol and non-volatile organic solutes International Journal of Mass Spectrometry and Ion Physics. 15: 291-302. DOI: 10.1016/0020-7381(74)85006-0  0.358
1972 Guidoboni RJ, Evans CA. Reduction of a matrix effect in spark source mass spectrometry using a solution doping technique Analytical Chemistry. 44: 2027-2030. DOI: 10.1021/Ac60320A014  0.312
1970 Evans CA. Ion microprobe mass spectrometric determination of oxygen in copper Analytical Chemistry. 42: 1130-1132. DOI: 10.1021/Ac60293A023  0.39
1970 Evans CA, Pemsler JP. Analysis of thin films by ion microprobe mass spectrometry Analytical Chemistry. 42: 1060-1064. DOI: 10.1021/Ac60291A033  0.388
1968 Evans CA, Morrison GH. Trace element survey analysis of biological materials by spark source mass spectrometry. Analytical Chemistry. 40: 869-75. PMID 5644702 DOI: 10.1021/Ac60262A022  0.499
1968 Evans CA, Morrison GH. Time resolution in spark source mass spectrometry Analytical Chemistry. 40: 2106-2115. DOI: 10.1021/Ac50158A029  0.509
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