Alexandra C. Ford, Ph.D.
Affiliations: | 2011 | Materials Science & Engineering | University of California, Berkeley, Berkeley, CA, United States |
Area:
Materials Science Engineering, Nanoscience, NanotechnologyGoogle:
"Alexandra Ford"Parents
Sign in to add mentorYuri Suzuki | grad student | 2011 | UC Berkeley | |
(Dopant Profiling of III-V Nanostructures for Electronic Applications.) |
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Publications
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Kane AA, Ford AC, Nissen A, et al. (2014) Etching of surfactant from solution-processed, type-separated carbon nanotubes and impact on device behavior. Acs Nano. 8: 2477-85 |
Ford AC, Shaughnessy M, Wong BM, et al. (2013) Physical removal of metallic carbon nanotubes from nanotube network devices using a thermal and fluidic process. Nanotechnology. 24: 105202 |
Chen SY, Wang CY, Ford AC, et al. (2013) Influence of catalyst choices on transport behaviors of InAs NWs for high-performance nanoscale transistors. Physical Chemistry Chemical Physics : Pccp. 15: 2654-9 |
Takahashi T, Nichols P, Takei K, et al. (2012) Contact printing of compositionally graded CdS(x)Se(1-x) nanowire parallel arrays for tunable photodetectors. Nanotechnology. 23: 045201 |
Madsen M, Takei K, Kapadia R, et al. (2011) Nanoscale semiconductor "X" on substrate "Y"--processes, devices, and applications. Advanced Materials (Deerfield Beach, Fla.). 23: 3115-27 |
Cho K, Ruebusch DJ, Lee MH, et al. (2011) Molecular monolayers for conformal, nanoscale doping of InP nanopillar photovoltaics Applied Physics Letters. 98 |
Ford AC, Yeung CW, Chuang S, et al. (2011) Ultrathin body InAs tunneling field-effect transistors on Si substrates Applied Physics Letters. 98: 113105 |
Ko H, Takei K, Kapadia R, et al. (2010) Ultrathin compound semiconductor on insulator layers for high-performance nanoscale transistors. Nature. 468: 286-9 |
Ford AC, Chuang S, Ho JC, et al. (2010) Patterned p-doping of InAs nanowires by gas-phase surface diffusion of Zn. Nano Letters. 10: 509-13 |
Ford AC, Ho JC, Chueh YL, et al. (2009) Diameter-dependent electron mobility of InAs nanowires. Nano Letters. 9: 360-5 |