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Jian Wei, Ph.D. - Publications

Affiliations: 
2003 Princeton University, Princeton, NJ 
Area:
Photonics and Optoelectronic Materials
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10 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2003 Xia F, Wei J, Menon V, Forrest SR. Monolithic integration of a semiconductor optical amplifier and a high bandwidth p-i-n photodiode using asymmetric twin-waveguide technology Ieee Photonics Technology Letters. 15: 452-454. DOI: 10.1109/Lpt.2002.807930  0.671
2002 Wei J, Xia F, Forrest SR. A high-responsivity high-bandwidth asymmetric twin-waveguide coupled InGaAs-InP-InAlAs avalanche photodiode Ieee Photonics Technology Letters. 14: 1590-1592. DOI: 10.1109/Lpt.2002.803894  0.652
2002 Wei J, Xia F, Li C, Forrest SR. High T0 long-wavelength InGaAsN quantum-well lasers grown by GSMBE using a solid arsenic source Ieee Photonics Technology Letters. 14: 597-599. DOI: 10.1109/68.998696  0.662
2001 Xia F, Thomson JK, Gokhale MR, Studenkov PV, Wei J, Lin W, Forrest SR. An asymmetric twin-waveguide high-bandwidth photodiode using a lateral taper coupler Ieee Photonics Technology Letters. 13: 845-847. DOI: 10.1109/68.935823  0.695
2001 Wei J, Lin W, Thomson KJ, Forrest SR. Gas source molecular beam epitaxy grown InGaAs(P)N-InP long-wavelength (λ > 1.65 μm) photodetectors using a solid arsenic source Ieee Photonics Technology Letters. 13: 352-354. DOI: 10.1109/68.917850  0.67
2000 Gokhale MR, Studenkov PV, Wei J, Forrest SR. Low-threshold current, high-efficiency 1.3-μm wavelength aluminum-free InGaAsN-based quantum-well lasers Ieee Photonics Technology Letters. 12: 131-133. DOI: 10.1109/68.823493  0.703
2000 Wei J, Gokhale MR, Thomson KJ, Forrest SR. InGaAsPN-InP-based photodetectors for long wavelength (λ>1.65 μm) applications Ieee Photonics Technology Letters. 12: 68-70. DOI: 10.1109/68.817496  0.67
1999 Gokhale MR, Wei J, Studenkov PV, Wang H, Forrest SR. High-performance long-wavelength (λ approx. 1.3 μm) InGaAsPN quantum-well lasers Ieee Photonics Technology Letters. 11: 952-954. DOI: 10.1109/68.775310  0.701
1999 Gokhale MR, Wei J, Wang H, Forrest SR. Growth and characterization of small band gap (∼0.6 eV) InGaAsN layers on InP Applied Physics Letters. 74: 1287-1289. DOI: 10.1063/1.123526  0.499
1999 Wei J, Gokhale MR, R. Forrest S. Growth of thallium containing III–V materials by gas-source molecular beam epitaxy Journal of Crystal Growth. 203: 302-308. DOI: 10.1016/S0022-0248(99)00123-2  0.313
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