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Jeonghyun Hwang, Ph.D. - Publications

Affiliations: 
2004 Cornell University, Ithaca, NY, United States 
Area:
Compound semiconductor materials and high frequency high speed devices; molecular beam epitaxy; microwave and millimeter wave transistors and integrated circuits; semiconductor lasers and photodetectors and their integration with transistors
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31 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2017 Ji Y, Calderon B, Han Y, Cueva P, Jungwirth NR, Alsalman HA, Hwang J, Fuchs GD, Muller DA, Spencer MG. Chemical Vapor Deposition Growth of Large Single-Crystal Mono-, Bi-, Tri-Layer Hexagonal Boron Nitride and Their Interlayer Stacking. Acs Nano. PMID 29099576 DOI: 10.1021/Acsnano.7B04841  0.561
2016 Joe DJ, Hwang J, Johnson C, Cha HY, Lee JW, Shen X, Spencer MG, Tiwari S, Kim M. Surface Functionalized Graphene Biosensor on Sapphire for Cancer Cell Detection. Journal of Nanoscience and Nanotechnology. 16: 144-51. PMID 27398439 DOI: 10.1166/Jnn.2016.12042  0.698
2016 Wen W, Kato N, Hwang JY, Guo X, Tabara Y, Li H, Dorajoo R, Yang X, Tsai FJ, Li S, Wu Y, Wu T, Kim S, Guo X, Liang J, et al. Genome-wide association studies in East Asians identify new loci for waist-hip ratio and waist circumference. Scientific Reports. 6: 17958. PMID 26785701 DOI: 10.1038/Srep17958  0.333
2016 Kwak JY, Hwang J, Calderon B, Alsalman H, Spencer MG. Long wavelength optical response of graphene-MoS2 heterojunction Applied Physics Letters. 108. DOI: 10.1063/1.4943169  0.588
2015 Kim KS, Ji SR, Kim HM, Kwon YJ, Hwang JH, Lee SY. Intercostal Nerve Schwannoma Encountered during a Rib-Latissimus Dorsi Osteomyocutaneous Flap Operation. Archives of Plastic Surgery. 42: 800-802. PMID 26618135 DOI: 10.5999/aps.2015.42.6.800  0.312
2015 Cho D, Kim M, Hwang J, Park JH, Joo YL, Jeong Y. Facile Synthesis of Porous Silicon Nanofibers by Magnesium Reduction for Application in Lithium Ion Batteries. Nanoscale Research Letters. 10: 424. PMID 26510445 DOI: 10.1186/S11671-015-1132-8  0.372
2014 Kwak JY, Hwang J, Calderon B, Alsalman H, Munoz N, Schutter B, Spencer MG. Electrical characteristics of multilayer MoS2 FET's with MoS2/graphene heterojunction contacts. Nano Letters. 14: 4511-6. PMID 24978093 DOI: 10.1021/Nl5015316  0.592
2014 Hwang J, Kim M, Cha HY, Spencer MG, Lee JW. Metal free growth of graphene on quartz substrate using chemical vapor deposition (CVD). Journal of Nanoscience and Nanotechnology. 14: 2979-83. PMID 24734720 DOI: 10.1166/Jnn.2014.8583  0.669
2014 Gorantla S, Bachmatiuk A, Hwang J, Alsalman HA, Kwak JY, Seyller T, Eckert J, Spencer MG, Rümmeli MH. A universal transfer route for graphene. Nanoscale. 6: 889-96. PMID 24270801 DOI: 10.1039/C3Nr04739C  0.582
2014 Hwang J, Calderon BR, Alsalman HA, Kwak JY, Kim M, Spencer MG. Growth of 2D heterostructures of graphene/BN Proceedings of Spie. 9083. DOI: 10.1117/12.2053442  0.629
2013 Hwang J, Kim M, Campbell D, Alsalman HA, Kwak JY, Shivaraman S, Woll AR, Singh AK, Hennig RG, Gorantla S, Rümmeli MH, Spencer MG. van der Waals epitaxial growth of graphene on sapphire by chemical vapor deposition without a metal catalyst. Acs Nano. 7: 385-95. PMID 23244231 DOI: 10.1021/Nn305486X  0.641
2013 Hwang J, Kim M, Shields VB, Spencer MG. CVD growth of SiC on sapphire substrate and graphene formation from the epitaxial SiC Journal of Crystal Growth. 366: 26-30. DOI: 10.1016/J.Jcrysgro.2012.12.136  0.669
2013 Ardaravi?ius L, Liberis J, Šermukšnis E, Matulionis A, Hwang J, Kwak JY, Campbell D, Alsalman HA, Eastman LF, Spencer MG. High frequency noise of epitaxial graphene grown on sapphire Physica Status Solidi - Rapid Research Letters. 7: 348-351. DOI: 10.1002/Pssr.201307074  0.678
2012 Kim M, Hwang J, Lepak LA, Lee JW, Spencer MG, Tiwari S. Improvement of carrier mobility of top-gated SiC epitaxial graphene transistors using a PVA dielectric buffer layer. Nanotechnology. 23: 335202. PMID 22842470 DOI: 10.1088/0957-4484/23/33/335202  0.72
2012 Kim M, Hwang J, Shields VB, Tiwari S, Spencer MG, Lee JW. SiC surface orientation and Si loss rate effects on epitaxial graphene. Nanoscale Research Letters. 7: 186. PMID 22410299 DOI: 10.1186/1556-276X-7-186  0.7
2012 Gallo EM, Willner BI, Hwang J, Sun S, Spencer M, Salgaj T, Mitchel WC, Sbrockey N, Tompa GS. Chemical vapor deposition of graphene on copper at reduced temperatures Proceedings of Spie - the International Society For Optical Engineering. 8462. DOI: 10.1117/12.929094  0.642
2010 Hwang J, Shields VB, Thomas CI, Shivaraman S, Hao D, Kim M, Woll AR, Tompa GS, Spencer MG. Epitaxial growth of graphitic carbon on C-face SiC and Sapphire by chemical vapor deposition (CVD). Journal of Crystal Growth. 312: 3219-3224. PMID 20976026 DOI: 10.1016/J.Jcrysgro.2010.07.046  0.641
2010 Wang H, Strait JH, George PA, Shivaraman S, Shields VB, Chandrashekhar M, Hwang J, Rana F, Spencer MG, Ruiz-Vargas CS, Park J. Ultrafast relaxation dynamics of hot optical phonons in graphene Applied Physics Letters. 96. DOI: 10.1063/1.3291615  0.595
2006 Gao M, Bradley ST, Cao Y, Jena D, Lin Y, Ringel SA, Hwang J, Schaff WJ, Brillson LJ. Compositional modulation and optical emission in AlGaN epitaxial films Journal of Applied Physics. 100. DOI: 10.1063/1.2382622  0.368
2005 Wang Z, Reimann K, Woerner M, Elsaesser T, Hofstetter D, Hwang J, Schaff WJ, Eastman LF. Optical phonon sidebands of electronic intersubband absorption in strongly polar semiconductor heterostructures. Physical Review Letters. 94: 037403. PMID 15698322 DOI: 10.1103/Physrevlett.94.037403  0.447
2005 Gao M, Lin Y, Bradley ST, Ringel SA, Hwang J, Schaff WJ, Brillson LJ. Spontaneous compositional superlattice and band-gap reduction in Si-doped Al xGa 1-xN epilayers Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2126127  0.364
2005 Bradley ST, Goss SH, Hwang J, Schaff WJ, Brillson LJ. Pre-metallization processing effects on Schottky contacts to AlGaN/GaN heterostructures Journal of Applied Physics. 97. DOI: 10.1063/1.1883719  0.323
2005 Brillson LJ, Bradley ST, Tumakha SH, Goss SH, Sun XL, Okojie RS, Hwang J, Schaff WJ. Local electronic and chemical structure at GaN, AlGaN and SiC heterointerfaces Applied Surface Science. 244: 257-263. DOI: 10.1016/J.Apsusc.2004.09.172  0.345
2004 Koley G, Cha HY, Hwang J, Schaff WJ, Eastman LF, Spencer MG. Perturbation of charges in AIGaN/GaN heterostructures by ultraviolet laser illumination Journal of Applied Physics. 96: 4253-4262. DOI: 10.1063/1.1794892  0.59
2004 Bradley ST, Goss SH, Hwang J, Schaff WJ, Brillson LJ. Surface cleaning and annealing effects on Ni/AlGaN interface atomic composition and Schottky barrier height Applied Physics Letters. 85: 1368-1370. DOI: 10.1063/1.1785287  0.365
2004 Hwang J, Schaff WJ, Green BM, Cha H, Eastman LF. Effects of a molecular beam epitaxy grown AlN passivation layer on AlGaN/GaN heterojunction field effect transistors Solid-State Electronics. 48: 363-366. DOI: 10.1016/S0038-1101(03)00324-1  0.694
2003 Furis M, Cartwright AN, Hwang J, Schaff WJ. Time Resolved Photoluminescence of Si-doped High Al Mole Fraction AlGaN Epilayers Grown by Plasma-Enhanced Molecular Beam Epitaxy Mrs Proceedings. 798. DOI: 10.1557/Proc-798-Y5.45  0.379
2002 Hwang J, Schaff WJ, Eastman LF, Bradley ST, Brillson LJ, Look DC, Wu J, Walukiewicz W, Furis M, Cartwright AN. Si doping of high-Al-mole fraction AlxGa1-xN alloys with rf plasma-induced molecular-beam-epitaxy Applied Physics Letters. 81: 5192-5194. DOI: 10.1063/1.1534395  0.54
2001 Lu H, Schaff WJ, Hwang J, Eastman LF. Preparation of InN and InN-based heterostructures by molecular beam epitaxy Materials Research Society Symposium Proceedings. 680: 37-42. DOI: 10.1557/Proc-680-E3.2  0.537
2001 Lu H, Schaff WJ, Hwang J, Wu H, Koley G, Eastman LF. Effect of an AlN buffer layer on the epitaxial growth of InN by molecular-beam epitaxy Applied Physics Letters. 79: 1489-1491. DOI: 10.1063/1.1402649  0.685
2000 Lu H, Schaff WJ, Hwang J, Wu H, Yeo W, Pharkya A, Eastman LF. Improvement on epitaxial grown of InN by migration enhanced epitaxy Applied Physics Letters. 77: 2548-2550. DOI: 10.1063/1.1318235  0.647
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