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Tejas Krishnamohan, Ph.D. - Publications

Affiliations: 
2006 Stanford University, Palo Alto, CA 
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Year Citation  Score
2011 Kuzum D, Park JH, Krishnamohan T, Wong HSP, Saraswat KC. The effect of donor/acceptor nature of interface traps on Ge MOSFET characteristics Ieee Transactions On Electron Devices. 58: 1015-1022. DOI: 10.1109/Ted.2011.2120613  0.603
2011 Kuzum D, Krishnamohan T, Nainani A, Sun Y, Pianetta PA, Wong HSP, Saraswat KC. High-mobility Ge N-MOSFETs and mobility degradation mechanisms Ieee Transactions On Electron Devices. 58: 59-66. DOI: 10.1109/Ted.2010.2088124  0.637
2011 Nainani A, Yuan Z, Krishnamohan T, Bennett BR, Boos JB, Reason M, Ancona MG, Nishi Y, Saraswat KC. InxGa1-xSb channel p-metal-oxide-semiconductor field effect transistors: Effect of strain and heterostructure design Journal of Applied Physics. 110. DOI: 10.1063/1.3600220  0.606
2011 Kuzum D, Park JH, Krishnamohan T, Saraswat KC. Effect of interfacial oxide on Ge MOSCAP and N-MOSFET characteristics Microelectronic Engineering. 88: 3428-3431. DOI: 10.1016/J.Mee.2010.04.011  0.571
2010 Raghunathan S, Krishnamohan T, Saraswat K. Novel SiGe source/drain for reduced parasitic resistance in Ge NMOS Ecs Transactions. 33: 871-876. DOI: 10.1149/1.3487617  0.406
2010 Nainani A, Yuan Z, Krishnamohan T, Saraswat K. Optimal design of III-V heterostructure MOSFETs International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 103-106. DOI: 10.1109/SISPAD.2010.5604557  0.453
2010 Nainani A, Irisawa T, Yuan Z, Sun Y, Krishnamohan T, Reason M, Bennett BR, Boos JB, Ancona MG, Nishi Y, Saraswat KC. Development of high-k dielectric for antimonides and a sub 350°C III-V pMOSFET outperforming Germanium Technical Digest - International Electron Devices Meeting, Iedm. 6.4.1-6.4.4. DOI: 10.1109/IEDM.2010.5703309  0.429
2010 Krishnamohan T, Kim D, Saraswat KC. Properties and trade-offs of compound semiconductor MOSFETs Fundamentals of Iii-V Semiconductor Mosfets. 7-30. DOI: 10.1007/978-1-4419-1547-4_2  0.387
2009 Nainani A, Kobayashi M, Witte D, Irisawa T, Krishnamohan T, Saraswat K, Bennett BR, Ancona MG, Boos JB. Investigation of Strained-Sb Hetrostructures with High Hole Mobility The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.2009.J-2-6  0.529
2009 Ramaswamy N, Yeh CC, Krishnamohan T, Gowda S, Rocklein N, Brewer R, Graettinger T, Min K. Multi-Layer High-K Tunnel Barrier for a Voltage Scaled NAND-Type Flash Cell 2009 Ieee Workshop On Microelectronics and Electron Devices, Wmed 2009. 49-51. DOI: 10.1109/WMED.2009.4816146  0.31
2009 Adhikari H, Harris HR, Smith CE, Yang JIW, Coss B, Parthasarathy S, Nguyen BY, Patruno P, Krishnamohan T, Cayrefourcq I, Majhi P, Jammy R. High mobility SiGe shell-Si core omega gate pFETs International Symposium On Vlsi Technology, Systems, and Applications, Proceedings. 136-138. DOI: 10.1109/VTSA.2009.5159327  0.421
2009 Kuzum D, Pethe AJ, Krishnamohan T, Saraswat KC. Ge (100) and (111) N- and P-FETs with high mobility and low-T mobility characterization Ieee Transactions On Electron Devices. 56: 648-655. DOI: 10.1109/Ted.2009.2014198  0.755
2009 Kuzum D, Krishnamohan T, Nainani A, Sun Y, Pianetta PA, Wong HSP, Saraswat KC. Experimental demonstration of high mobility Ge NMOS Technical Digest - International Electron Devices Meeting, Iedm. 19.1.1-19.1.4. DOI: 10.1109/IEDM.2009.5424322  0.53
2009 Nainani A, Raghunathan S, Witte D, Kobayashi M, Irisawa T, Krishnamohan T, Saraswat K, Bennett BR, Ancona MG, Boos JB. Engineering of strained III-V heterostructures for high hole mobility Technical Digest - International Electron Devices Meeting, Iedm. 35.3.1-35.3.4. DOI: 10.1109/IEDM.2009.5424267  0.476
2009 Raghunathan S, Krishnamohan T, Parat K, Saraswat K. Investigation of ballistic current in scaled floating-gate NAND FLASH and a solution Technical Digest - International Electron Devices Meeting, Iedm. 34.1.1-34.1.4. DOI: 10.1109/IEDM.2009.5424216  0.442
2009 Kuzum D, Martens K, Krishnamohan T, Saraswat KC. Characteristics of surface states and charge neutrality level in Ge Applied Physics Letters. 95. DOI: 10.1063/1.3270529  0.522
2008 Kuzum D, Krishnamohan T, Pethe A, Oshima Y, Sun Y, McVittie J, Pianetta PA, McIntyre PC, Saraswat KC. Ge interface passivation techniques and their thermal stability Ecs Transactions. 16: 1025-1029. DOI: 10.1149/1.2986865  0.639
2008 Kim D, Krishnamohan T, Saraswat KC. Performance evaluation of 15nm gate length double-gate n-MOSFETs with high mobility channels: HIV, Ge and Si Ecs Transactions. 16: 47-55. DOI: 10.1149/1.2986752  0.5
2008 Saraswat KC, Kim D, Krishnamohan T, Kuzum D, Okyay AK, Pethe A, Yu HY. Germanium for high performance MOSFETs and optical interconnects Ecs Transactions. 16: 3-12. DOI: 10.1149/1.2986748  0.802
2008 Martens K, Chui CO, Brammertz G, De Jaeger B, Kuzum D, Meuris M, Heyns MM, Krishnamohan T, Saraswat K, Maes HE, Groeseneken G. On the correct extraction of interface trap density of MOS devices with high-mobility semiconductor substrates Ieee Transactions On Electron Devices. 55: 547-556. DOI: 10.1109/Ted.2007.912365  0.729
2008 Krishnamohan T, Pham AT, Jungemann C, Meinerzhagen B, Saraswat KC. Mobilty modeling of strained germanium (s-Ge) quantum well (QW) heterostructure pMOSFETs Ieee 2008 Silicon Nanoelectronics Workshop, Snw 2008. DOI: 10.1109/SNW.2008.5418449  0.379
2008 Krishnamohan T. Band-engineering of novel channel materials for high performance nanoscale MOSFETs International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 97-100. DOI: 10.1109/SISPAD.2008.4648246  0.493
2008 Kuzum D, Krishnamohan T, Pethe AJ, Okyay AK, Oshima Y, Sun Y, McVittie JP, Pianetta PA, McIntyre PC, Saraswat KC. Ge-interface engineering with ozone oxidation for low interface-state density Ieee Electron Device Letters. 29: 328-330. DOI: 10.1109/Led.2008.918272  0.769
2008 Krishnamohan T, Kim D, Dinh TV, Pham AT, Meinerzhagen B, Jungemann C, Saraswat K. Comparison of (001), (110) and (111) uniaxial- And biaxial- strained-Ge and strained-Si PMOS DGFETs for all channel orientations: Mobility enhancement, drive current, delay and off-state leakage Technical Digest - International Electron Devices Meeting, Iedm. DOI: 10.1109/IEDM.2008.4796845  0.355
2008 Krishnamohan T, Kim D, Raghunathan S, Saraswat K. Double-gate strained-ge heterostructure tunneling FET (TFET) with record high drive currents and <60mV/dec subthreshold slope Technical Digest - International Electron Devices Meeting, Iedm. DOI: 10.1109/IEDM.2008.4796839  0.329
2008 Krishnamohan T, Saraswat K. High mobility ge and III-V materials and novel device structures for high performance nanoscale MOSFETS Essderc 2008 - Proceedings of the 38th European Solid-State Device Research Conference. 38-46. DOI: 10.1109/ESSDERC.2008.4681694  0.48
2007 Saraswat KC, Kim D, Krishnamohan T, Pethe A. Performance limitations of Si bulk CMOS and alternatives for future ULSI Ecs Transactions. 8: 9-14. DOI: 10.1149/1.2767279  0.789
2007 Hazeghi A, Krishnamohan T, Wong HSP. Schottky-barrier carbon nanotube field-effect transistor modeling Ieee Transactions On Electron Devices. 54: 439-445. DOI: 10.1109/Ted.2006.890384  0.35
2007 Kim D, Krishnamohan T, Nishi Y, Saraswat KC. Band to band tunneling limited off state current in ultra-thin body double gate FETs with high mobility materials: III-V, Ge and strained Si/Ge International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 389-392. DOI: 10.1109/SISPAD.2006.282916  0.415
2007 Kuzum D, Pethe AJ, Krishnamohan T, Oshima Y, Sun Y, McVittie JP, Pianetta PA, McIntyre PC, Saraswat KC. Interface-engineered Ge (100) and (111), N- and P-FETs with high mobility Technical Digest - International Electron Devices Meeting, Iedm. 723-726. DOI: 10.1109/IEDM.2007.4419048  0.673
2007 Kim D, Krishnamohan T, Smith L, Wong HSP, Saraswat KC. Band to band tunneling study in high mobility materials: III-V, Si, Ge and strained SiGe 65th Drc Device Research Conference. 57-58. DOI: 10.1109/DRC.2007.4373650  0.364
2007 Krishnamohan T, Jungemann C, Kim D, Ungersboeck E, Selberherr S, Pham AT, Meinerzhagen B, Wong P, Nishi Y, Saraswat KC. High performance, uniaxially-strained, silicon and germanium, double-gate p-MOSFETs Microelectronic Engineering. 84: 2063-2066. DOI: 10.1016/J.Mee.2007.04.085  0.609
2007 Krishnamohan T, Kim D, Jungemann C, Pham AT, Meinerzhagen B, Nishi Y, Saraswat KC. High performance, strained-Ge, heterostructure p-MOSFETs 2007 International Conference On Simulation of Semiconductor Processes and Devices, Sispad 2007. 21-24.  0.345
2006 Krishnamohan T, Kim D, Jungemann C, Nishi Y, Saraswat KC. Evaluating Strained/Relaxed-Ge, Strained-Si, Strained-SiGe For Future Nanoscale p-MOSFETs The Japan Society of Applied Physics. 2006: 168-169. DOI: 10.7567/Ssdm.2006.H-1-5  0.539
2006 Krishnamohan T, Kim D, Jungemann C, Nishi Y, Saraswat K. High performance, ultra-thin, strained-Ge, heterostructure FETs with high mobility and low leakage Ecs Transactions. 3: 687-695. DOI: 10.1149/1.2355864  0.63
2006 Saraswat KC, Chui CO, Kapur P, Krishnamohan T, Nayfeh A, Okyay AK, Shenoy RS. Performance limitations of Si CMOS and alternatives for nanoelectronics International Journal of High Speed Electronics and Systems. 16: 175-192. DOI: 10.1142/S0129156406003606  0.762
2006 Krishnamohan T, Kim D, Nguyen CD, Jungemann C, Nishi Y, Saraswat KC. High-mobility low band-to-band-tunneling strained-germanium double-gate heterostructure FETs: Simulations Ieee Transactions On Electron Devices. 53: 1000-1009. DOI: 10.1109/Ted.2006.872367  0.649
2006 Krishnamohan T, Krivokapic Z, Uchida K, Nishi Y, Saraswat KC. High-mobility ultrathin strained Ge MOSFETs on Bulk and SOI with low band-to-band tunneling leakage: Experiments Ieee Transactions On Electron Devices. 53: 990-999. DOI: 10.1109/Ted.2006.872362  0.662
2006 Krishnamohan T, Jungemann C, Kim D, Ungersboeck E, Selberherr S, Wong P, Nishi Y, Saraswat K. Theoretical investigation of performance in uniaxially- and biaxially-strained Si, SiGe and Ge double-gate p-MOSFETs Technical Digest - International Electron Devices Meeting, Iedm. DOI: 10.1109/IEDM.2006.346938  0.385
2006 Saraswat KC, Chui CO, Kim D, Krishnamohan T, Pethe A. High mobility materials and novel device structures for high performance nanoscale MOSFETs Technical Digest - International Electron Devices Meeting, Iedm. DOI: 10.1109/IEDM.2006.346871  0.796
2006 Saraswat K, Chui CO, Krishnamohan T, Kim D, Nayfeh A, Pethe A. High performance germanium MOSFETs Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 135: 242-249. DOI: 10.1016/J.Mseb.2006.08.014  0.805
2006 Krishnamohan T, Kim D, Jungemann C, Nishi Y, Saraswat KC. Strained-Si, relaxed-Ge or strained-(Si)Ge for future nanoscale p-MOSFETs? Digest of Technical Papers - Symposium On Vlsi Technology. 144-145.  0.442
2005 Krishnamohan T, Krivokapic Z, Uchida K, Nishi Y, Saraswat KC. Low defect ultra-thin fully strained-Ge MOSFET on relaxed Si with high mobility and low Band-To-Band-Tunneling (BTBT) Digest of Technical Papers - Symposium On Vlsi Technology. 2005: 82-83. DOI: 10.1109/.2005.1469221  0.471
2005 Saraswat KC, Chui CO, Krishnamohan T, Nayfeh A, McIntyre P. Ge based high performance nanoscale MOSFETs Microelectronic Engineering. 80: 15-21. DOI: 10.1016/J.Mee.2005.04.038  0.8
2005 Pethe A, Krishnamohan T, Kim D, Oh S, Wong HSP, Nishi Y, Saraswat KC. Investigation of the performance limits of III-V double-gate n-MOSFETs Technical Digest - International Electron Devices Meeting, Iedm. 2005: 605-608.  0.72
2004 Saraswat KC, Chui CO, Krishnamohan T, Okyay AK, Kim H, McIntyre P. Ge and SiGe for High Performance MOSFETs and Integrated Optical Interconnects The Japan Society of Applied Physics. 2004: 718-719. DOI: 10.7567/Ssdm.2004.A-8-1  0.713
2003 Krishnamohan T, Krivokapic Z, Saraswat KC. A novel sub-20 nm depletion-mode double-gate (DMDG) FET International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 2003: 243-246. DOI: 10.1109/SISPAD.2003.1233682  0.326
2003 Wang D, Wang Q, Javey A, Tu R, Dai H, Kim H, McIntyre PC, Krishnamohan T, Saraswat KC. Germanium nanowire field-effect transistors with SiO2 and high-κ HfO2 gate dielectrics Applied Physics Letters. 83: 2432-2434. DOI: 10.1063/1.1611644  0.703
2003 Joshi AR, Krishnamohan T, Saraswat KC. A model for crystal growth during metal induced lateral crystallization of amorphous silicon Journal of Applied Physics. 93: 175-181. DOI: 10.1063/1.1526937  0.611
2003 Krishnamohan T, Jungemann C, Saraswat KC. A Novel, Very High Performance, Sub-20nm Depletion-Mode Double-Gate (DMDG) Si/SixGe(1.x)/Si Channel PMOSFET Technical Digest - International Electron Devices Meeting. 687-690.  0.416
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