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Arthur C. Gossard - Publications

Affiliations: 
1960-1987 Bell Laboratories, Murray Hill, NJ, United States 
 1987- University of California, Santa Barbara, Santa Barbara, CA, United States 
Area:
Materials Science Engineering, Electronics and Electrical Engineering, Condensed Matter Physics
Website:
https://www.materials.ucsb.edu/node/1411
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Year Citation  Score
2021 Camenzind LC, Svab S, Stano P, Yu L, Zimmerman JD, Gossard AC, Loss D, Zumbühl DM. Isotropic and Anisotropic g-Factor Corrections in GaAs Quantum Dots. Physical Review Letters. 127: 057701. PMID 34397233 DOI: 10.1103/PhysRevLett.127.057701  0.647
2020 Nandi U, Dutzi K, Deninger A, Lu H, Norman J, Gossard AC, Vieweg N, Preu S. ErAs:In(Al)GaAs photoconductor-based time domain system with 4.5  THz single shot bandwidth and emitted terahertz power of 164  µW. Optics Letters. 45: 2812-2815. PMID 32412473 DOI: 10.1364/Ol.388870  0.308
2020 Wan Y, Shang C, Huang J, Xie Z, Jain A, Norman J, Chen B, Gossard AC, Bowers JE. Low-Dark Current 1.55 Micrometer InAs Quantum Dash Waveguide Photodiodes. Acs Nano. PMID 32083840 DOI: 10.1021/Acsnano.9B09715  0.331
2020 Wan Y, Shang C, Norman J, Shi B, Li Q, Collins N, Dumont M, Lau KM, Gossard AC, Bowers JE. Low Threshold Quantum Dot Lasers Directly Grown on Unpatterned Quasi-Nominal (001) Si Ieee Journal of Selected Topics in Quantum Electronics. 26: 1-9. DOI: 10.1109/Jstqe.2020.2964381  0.387
2020 Snijders HJ, Kok DNL, Stolpe MFvd, Frey JA, Norman J, Gossard AC, Bowers JE, Exter MPv, Bouwmeester D, Löffler W. Extended polarized semiclassical model for quantum-dot cavity QED and its application to single-photon sources Physical Review A. 101: 53811. DOI: 10.1103/Physreva.101.053811  0.358
2020 Chen B, Wan Y, Xie Z, Huang J, Zhang N, Shang C, Norman J, Li Q, Tong Y, Lau KM, Gossard AC, Bowers JE. Low Dark Current High Gain InAs Quantum Dot Avalanche Photodiodes Monolithically Grown on Si Acs Photonics. 7: 528-533. DOI: 10.1021/Acsphotonics.9B01709  0.357
2020 Wan Y, Norman JC, Tong Y, Kennedy MJ, He W, Selvidge J, Shang C, Dumont M, Malik A, Tsang HK, Gossard AC, Bowers JE. Quantum Dot Lasers: 1.3 µm Quantum Dot‐Distributed Feedback Lasers Directly Grown on (001) Si (Laser Photonics Rev. 14(7)/2020) Laser & Photonics Reviews. 14: 2070042. DOI: 10.1002/Lpor.202070042  0.344
2020 Wan Y, Zhang S, Norman JC, Kennedy M, He W, Tong Y, Shang C, He J, Tsang HK, Gossard AC, Bowers JE. Quantum Dot Lasers: Directly Modulated Single‐Mode Tunable Quantum Dot Lasers at 1.3 µm (Laser Photonics Rev. 14(3)/2020) Laser & Photonics Reviews. 14: 2070021. DOI: 10.1002/Lpor.202070021  0.35
2020 Wan Y, Norman JC, Tong Y, Kennedy MJ, He W, Selvidge J, Shang C, Dumont M, Malik A, Tsang HK, Gossard AC, Bowers JE. 1.3 µm Quantum Dot‐Distributed Feedback Lasers Directly Grown on (001) Si Laser & Photonics Reviews. 14: 2000037. DOI: 10.1002/Lpor.202000037  0.342
2020 Wan Y, Zhang S, Norman JC, Kennedy M, He W, Tong Y, Shang C, He J, Tsang HK, Gossard AC, Bowers JE. Directly Modulated Single‐Mode Tunable Quantum Dot Lasers at 1.3 µm Laser & Photonics Reviews. 14: 1900348. DOI: 10.1002/Lpor.201900348  0.367
2019 Camenzind LC, Yu L, Stano P, Zimmerman JD, Gossard AC, Loss D, Zumbühl DM. Spectroscopy of Quantum Dot Orbitals with In-Plane Magnetic Fields. Physical Review Letters. 122: 207701. PMID 31172765 DOI: 10.1103/Physrevlett.122.207701  0.673
2019 Guimarães PS, Keay BJ, Kaminski JP, Allen SJ, Hopkins PF, Gossard AC, Florez LT, Harbison JP. Photon-mediated sequential resonant tunneling in intense terahertz electric fields. Physical Review Letters. 70: 3792-3795. PMID 10053963 DOI: 10.1103/Physrevlett.70.3792  0.366
2019 Höpfel RA, Shah J, Gossard AC. Nonequilibrium electron-hole plasma in GaAs quantum wells. Physical Review Letters. 56: 765-768. PMID 10033279 DOI: 10.1103/Physrevlett.56.765  0.401
2019 Liu S, Wu X, Jung D, Norman JC, Kennedy MJ, Tsang HK, Gossard AC, Bowers JE. High-channel-count 20  GHz passively mode-locked quantum dot laser directly grown on Si with 41  Tbit/s transmission capacity Optica. 6: 128. DOI: 10.1364/Optica.6.000128  0.346
2019 Shang C, Gossard AC, Bowers JE, Wan Y, Norman JC, Collins N, MacFarlane I, Dumont M, Liu S, Li Q, Lau KM. Low-Threshold Epitaxially Grown 1.3-μm InAs Quantum Dot Lasers on Patterned (001) Si Ieee Journal of Selected Topics in Quantum Electronics. 25: 1-7. DOI: 10.1109/Jstqe.2019.2927581  0.355
2019 Norman JC, Zhang Z, Jung D, Shang C, Kennedy M, Dumont M, Herrick RW, Gossard AC, Bowers JE. The Importance of p-Doping for Quantum Dot Laser on Silicon Performance Ieee Journal of Quantum Electronics. 55: 1-11. DOI: 10.1109/Jqe.2019.2941579  0.416
2019 Norman JC, Jung D, Zhang Z, Wan Y, Liu S, Shang C, Herrick RW, Chow WW, Gossard AC, Bowers JE. A Review of High-Performance Quantum Dot Lasers on Silicon Ieee Journal of Quantum Electronics. 55: 1-11. DOI: 10.1109/Jqe.2019.2901508  0.422
2019 Banks HB, Wu Q, Valovcin DC, Mack S, Gossard AC, Pfeiffer L, Liu R, Sherwin MS. Publisher’s Note: Dynamical Birefringence: Electron-Hole Recollisions as Probes of Berry Curvature [Phys. Rev. X 7 , 041042 (2017)] Physical Review X. 9. DOI: 10.1103/Physrevx.9.049902  0.304
2019 Croot X, Pauka S, Jarratt M, Lu H, Gossard A, Watson J, Gardner G, Fallahi S, Manfra M, Reilly D. Gate-Sensing Charge Pockets in the Semiconductor-Qubit Environment Physical Review Applied. 11. DOI: 10.1103/Physrevapplied.11.064027  0.388
2019 Liu S, Norman J, Dumont M, Jung D, Torres A, Gossard AC, Bowers JE, Liu S, Torres A, Gossard A, Bowers J, Liu S, Jung D, Gossard A, Bowers J, ... ... Gossard A, et al. High-Performance O-Band Quantum-Dot Semiconductor Optical Amplifiers Directly Grown on a CMOS Compatible Silicon Substrate Acs Photonics. 6: 2523-2529. DOI: 10.1021/Acsphotonics.9B00903  0.376
2019 Huang J, Wan Y, Jung D, Norman J, Shang C, Li Q, Lau KM, Gossard AC, Bowers JE, Chen B. Defect Characterization of InAs/InGaAs Quantum Dot p-i-n Photodetector Grown on GaAs-on-V-Grooved-Si Substrate Acs Photonics. 6: 1100-1105. DOI: 10.1021/Acsphotonics.8B01707  0.401
2018 Valovcin DC, Banks HB, Mack S, Gossard AC, West K, Pfeiffer L, Sherwin MS. Optical frequency combs from high-order sideband generation. Optics Express. 26: 29807-29816. PMID 30469939 DOI: 10.1364/Oe.26.029807  0.303
2018 Frey JA, Snijders HJ, Norman J, Gossard AC, Bowers JE, Löffler W, Bouwmeester D. Electro-optic polarization tuning of microcavities with a single quantum dot. Optics Letters. 43: 4280-4283. PMID 30160707 DOI: 10.1364/Ol.43.004280  0.388
2018 Camenzind LC, Yu L, Stano P, Zimmerman JD, Gossard AC, Loss D, Zumbühl DM. Hyperfine-phonon spin relaxation in a single-electron GaAs quantum dot. Nature Communications. 9: 3454. PMID 30150721 DOI: 10.1038/S41467-018-05879-X  0.624
2018 Snijders HJ, Frey JA, Norman J, Flayac H, Savona V, Gossard AC, Bowers JE, van Exter MP, Bouwmeester D, Löffler W. Observation of the Unconventional Photon Blockade. Physical Review Letters. 121: 043601. PMID 30095925 DOI: 10.1103/Physrevlett.121.043601  0.363
2018 Inoue D, Jung D, Norman J, Wan Y, Nishiyama N, Arai S, Gossard AC, Bowers JE. Directly modulated 1.3 μm quantum dot lasers epitaxially grown on silicon. Optics Express. 26: 7022-7033. PMID 29609387 DOI: 10.1364/Oe.26.007022  0.38
2018 Wan Y, Inoue D, Jung D, Norman JC, Shang C, Gossard AC, Bowers JE. Directly modulated quantum dot lasers on silicon with a milliampere threshold and high temperature stability Photonics Research. 6: 776. DOI: 10.1364/Prj.6.000776  0.355
2018 Regensburger S, Preu S, Mukherjee Ak, Schonhuber S, Kainz MA, Winnerl S, Klopf JM, Lu H, Gossard AC, Unterrainer K. Broadband Terahertz Detection With Zero-Bias Field-Effect Transistors Between 100 GHz and 11.8 THz With a Noise Equivalent Power of 250 pW/$\sqrt{\text{Hz}}$ at 0.6 THz Ieee Transactions On Terahertz Science and Technology. 8: 465-471. DOI: 10.1109/Tthz.2018.2843535  0.355
2018 Snijders H, Frey J, Norman J, Post V, Gossard A, Bowers J, van Exter M, Löffler W, Bouwmeester D. Fiber-Coupled Cavity-QED Source of Identical Single Photons Physical Review Applied. 9. DOI: 10.1103/Physrevapplied.9.031002  0.357
2018 Liu S, Norman JC, Jung D, Kennedy M, Gossard AC, Bowers JE. Monolithic 9 GHz passively mode locked quantum dot lasers directly grown on on-axis (001) Si Applied Physics Letters. 113: 041108. DOI: 10.1063/1.5043200  0.365
2018 Inoue D, Wan Y, Jung D, Norman J, Shang C, Nishiyama N, Arai S, Gossard AC, Bowers JE. Low-dark current 10 Gbit/s operation of InAs/InGaAs quantum dot p-i-n photodiode grown on on-axis (001) GaP/Si Applied Physics Letters. 113: 093506. DOI: 10.1063/1.5041908  0.355
2018 Jung D, Ironside DJ, Bank SR, Gossard AC, Bowers JE. Effect of growth interruption in 1.55 μm InAs/InAlGaAs quantum dots on InP grown by molecular beam epitaxy Journal of Applied Physics. 123: 205302. DOI: 10.1063/1.5031772  0.629
2018 Jung D, Herrick R, Norman J, Turnlund K, Jan C, Feng K, Gossard AC, Bowers JE. Impact of threading dislocation density on the lifetime of InAs quantum dot lasers on Si Applied Physics Letters. 112: 153507. DOI: 10.1063/1.5026147  0.372
2018 Liu S, Jung D, Norman JC, Kennedy MJ, Gossard AC, Bowers JE. 490 fs pulse generation from passively mode-locked single section quantum dot laser directly grown on on-axis GaP/Si Electronics Letters. 54: 432-433. DOI: 10.1049/El.2017.4639  0.332
2018 Wan Y, Jung D, Shang C, Collins N, MacFarlane I, Norman J, Dumont M, Gossard AC, Bowers JE. Low-Threshold Continuous-Wave Operation of Electrically Pumped 1.55 μm InAs Quantum Dash Microring Lasers Acs Photonics. 6: 279-285. DOI: 10.1021/Acsphotonics.8B01341  0.372
2018 Nandi U, Norman JC, Gossard AC, Lu H, Preu S. 1550-nm Driven ErAs:In(Al)GaAs Photoconductor-Based Terahertz Time Domain System with 6.5 THz Bandwidth Journal of Infrared, Millimeter, and Terahertz Waves. 39: 340-348. DOI: 10.1007/S10762-018-0471-9  0.307
2018 Jung D, Norman J, Wan Y, Liu S, Herrick R, Selvidge J, Mukherjee K, Gossard AC, Bowers JE. Recent Advances in InAs Quantum Dot Lasers Grown on On-Axis (001) Silicon by Molecular Beam Epitaxy Physica Status Solidi (a). 216: 1800602. DOI: 10.1002/Pssa.201800602  0.371
2017 Wan Y, Zhang Z, Chao R, Norman J, Jung D, Shang C, Li Q, Kennedy MJ, Liang D, Zhang C, Shi JW, Gossard AC, Lau KM, Bowers JE. Monolithically integrated InAs/InGaAs quantum dot photodetectors on silicon substrates. Optics Express. 25: 27715-27723. PMID 29092242 DOI: 10.1364/Oe.25.027715  0.374
2017 Wan Y, Jung D, Norman J, Shang C, MacFarlane I, Li Q, Kennedy MJ, Gossard AC, Lau KM, Bowers JE. O-band electrically injected quantum dot micro-ring lasers on on-axis (001) GaP/Si and V-groove Si. Optics Express. 25: 26853-26860. PMID 29092170 DOI: 10.1364/Oe.25.026853  0.344
2017 Liu AY, Komljenovic T, Davenport ML, Gossard AC, Bowers JE. Reflection sensitivity of 1.3 μm quantum dot lasers epitaxially grown on silicon. Optics Express. 25: 9535-9543. PMID 28468336 DOI: 10.1364/Oe.25.009535  0.396
2017 Norman J, Kennedy MJ, Selvidge J, Li Q, Wan Y, Liu AY, Callahan PG, Echlin MP, Pollock TM, Lau KM, Gossard AC, Bowers JE. Electrically pumped continuous wave quantum dot lasers epitaxially grown on patterned, on-axis (001) Si. Optics Express. 25: 3927-3934. PMID 28241602 DOI: 10.1364/Oe.25.003927  0.372
2017 Liu AY, Peters J, Huang X, Jung D, Norman J, Lee ML, Gossard AC, Bowers JE. Electrically pumped continuous-wave 1.3  μm quantum-dot lasers epitaxially grown on on-axis (001)  GaP/Si. Optics Letters. 42: 338-341. PMID 28081107 DOI: 10.1364/Ol.42.000338  0.387
2017 Lau KM, Shi B, Wan Y, Liu AY, Li Q, Zhu S, Gossard AC, Bowers JE, Hu EL. InAs Quantum Dot Micro-disk Lasers Grown on (001) Si Emitting at Communication Wavelengths Proceedings of Spie. 10123. DOI: 10.1117/12.2256481  0.404
2017 Banks HB, Wu Q, Valovcin DC, Mack S, Gossard AC, Pfeiffer L, Liu R, Sherwin MS. Dynamical Birefringence: Electron-Hole Recollisions as Probes of Berry Curvature Physical Review X. 7. DOI: 10.1103/Physrevx.7.041042  0.416
2017 Dorow CJ, Hasling MW, Calman EV, Butov LV, Wilkes J, Campman KL, Gossard AC. Spatially resolved and time-resolved imaging of transport of indirect excitons in high magnetic fields Physical Review B. 95. DOI: 10.1103/Physrevb.95.235308  0.333
2017 Kuznetsova YY, Dorow CJ, Calman EV, Butov LV, Wilkes J, Muljarov EA, Campman KL, Gossard AC. Transport of indirect excitons in high magnetic fields Physical Review B. 95. DOI: 10.1103/Physrevb.95.125304  0.355
2017 Jung D, Callahan PG, Shin B, Mukherjee K, Gossard AC, Bowers JE. Low threading dislocation density GaAs growth on on-axis GaP/Si (001) Journal of Applied Physics. 122: 225703. DOI: 10.1063/1.5001360  0.342
2017 Jung D, Norman J, Kennedy MJ, Shang C, Shin B, Wan Y, Gossard AC, Bowers JE. High efficiency low threshold current 1.3 μm InAs quantum dot lasers on on-axis (001) GaP/Si Applied Physics Letters. 111: 122107. DOI: 10.1063/1.4993226  0.385
2017 Jung D, Zhang Z, Norman J, Herrick R, Kennedy MJ, Patel P, Turnlund K, Jan C, Wan Y, Gossard AC, Bowers JE. Highly Reliable Low-Threshold InAs Quantum Dot Lasers on On-Axis (001) Si with 87% Injection Efficiency Acs Photonics. 5: 1094-1100. DOI: 10.1021/Acsphotonics.7B01387  0.388
2016 Li Q, Wan Y, Liu AY, Gossard AC, Bowers JE, Hu EL, Lau KM. 1.3-μm InAs quantum-dot micro-disk lasers on V-groove patterned and unpatterned (001) silicon. Optics Express. 24: 21038-45. PMID 27607707 DOI: 10.1364/Oe.24.021038  0.391
2016 Wan Y, Li Q, Liu AY, Gossard AC, Bowers JE, Hu EL, Lau KM. Optically pumped 1.3  μm room-temperature InAs quantum-dot micro-disk lasers directly grown on (001) silicon. Optics Letters. 41: 1664-7. PMID 27192313 DOI: 10.1364/Ol.41.001664  0.367
2016 Andreakou P, Mikhailov AV, Cronenberger S, Scalbert D, Nalitov A, Kavokin AV, Nawrocki M, Butov LV, Campman KL, Gossard AC, Vladimirova M. Influence of magnetic quantum confined Stark effect on the spin lifetime of indirect excitons Physical Review B - Condensed Matter and Materials Physics. 93. DOI: 10.1103/Physrevb.93.115410  0.387
2016 Wan Y, Li Q, Liu AY, Gossard AC, Bowers JE, Hu EL, Lau KM. Temperature characteristics of epitaxially grown InAs quantum dot micro-disk lasers on silicon for on-chip light sources Applied Physics Letters. 109. DOI: 10.1063/1.4955456  0.408
2016 Wan Y, Li Q, Liu AY, Chow WW, Gossard AC, Bowers JE, Hu EL, Lau KM. Sub-wavelength InAs quantum dot micro-disk lasers epitaxially grown on exact Si (001) substrates Applied Physics Letters. 108. DOI: 10.1063/1.4952600  0.399
2016 Dorow CJ, Kuznetsova YY, Leonard JR, Chu MK, Butov LV, Wilkes J, Hanson M, Gossard AC. Indirect excitons in a potential energy landscape created by a perforated electrode Applied Physics Letters. 108. DOI: 10.1063/1.4942204  0.547
2016 Snijders H, Frey JA, Norman J, Bakker MP, Langman EC, Gossard A, Bowers JE, Van Exter MP, Bouwmeester D, Löffler W. Purification of a single-photon nonlinearity Nature Communications. 7. DOI: 10.1038/Ncomms12578  0.4
2015 Biesinger DE, Scheller CP, Braunecker B, Zimmerman J, Gossard AC, Zumbühl DM. Intrinsic Metastabilities in the Charge Configuration of a Double Quantum Dot. Physical Review Letters. 115: 106804. PMID 26382695 DOI: 10.1103/Physrevlett.115.106804  0.676
2015 Kuznetsova YY, Andreakou P, Hasling MW, Leonard JR, Calman EV, Butov LV, Hanson M, Gossard AC. Two-dimensional snowflake trap for indirect excitons. Optics Letters. 40: 589-92. PMID 25680157 DOI: 10.1364/Ol.40.000589  0.594
2015 Yoneda J, Otsuka T, Takakura T, Pioro-Ladrière M, Brunner R, Lu H, Nakajima T, Obata T, Noiri A, Palmstrøm CJ, Gossard AC, Tarucha S. Robust micromagnet design for fast electrical manipulations of single spins in quantum dots Applied Physics Express. 8. DOI: 10.7567/Apex.8.084401  0.358
2015 Liu AY, Srinivasan S, Norman J, Gossard AC, Bowers JE. Quantum dot lasers for silicon photonics [Invited] Photonics Research. 3: B1-B9. DOI: 10.1364/Prj.3.0000B1  0.385
2015 Wistey MA, Baraskar AK, Singisetti U, Burek GJ, Shin B, Kim E, McIntyre PC, Gossard AC, Rodwell MJW. Control of InGaAs and InAs facets using metal modulation epitaxy Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 33. DOI: 10.1116/1.4905497  0.333
2015 Liu AY, Herrick RW, Ueda O, Petroff PM, Gossard AC, Bowers JE. Reliability of InAs/GaAs quantum dot lasers epitaxially grown on silicon Ieee Journal On Selected Topics in Quantum Electronics. 21. DOI: 10.1109/Jstqe.2015.2418226  0.369
2015 Huang CY, Lee S, Chobpattana V, Stemmer S, Gossard AC, Thibeault B, Mitchell W, Rodwell M. Low Power III-V InGaAs MOSFETs featuring InP recessed source/drain spacers with Ion=120 μa/μm at Ioff=1 nA/μm and VDS=0.5 v Technical Digest - International Electron Devices Meeting, Iedm. 2015: 25.4.1-25.4.4. DOI: 10.1109/IEDM.2014.7047107  0.539
2015 Andreakou P, Cronenberger S, Scalbert D, Nalitov A, Gippius NA, Kavokin AV, Nawrocki M, Leonard JR, Butov LV, Campman KL, Gossard AC, Vladimirova M. Nonlinear optical spectroscopy of indirect excitons in coupled quantum wells Physical Review B - Condensed Matter and Materials Physics. 91. DOI: 10.1103/Physrevb.91.125437  0.432
2015 Chow WW, Liu AY, Gossard AC, Bowers JE. Extraction of inhomogeneous broadening and nonradiative losses in InAs quantum-dot lasers Applied Physics Letters. 107. DOI: 10.1063/1.4934838  0.395
2015 Hasling MW, Kuznetsova YY, Andreakou P, Leonard JR, Calman EV, Dorow CJ, Butov LV, Hanson M, Gossard AC. Stirring potential for indirect excitons Journal of Applied Physics. 117. DOI: 10.1063/1.4905080  0.558
2015 Burke PG, Curtin BM, Bowers JE, Gossard AC. Minority carrier barrier heterojunctions for improved thermoelectric efficiency Nano Energy. 12: 735-741. DOI: 10.1016/J.Nanoen.2015.01.037  0.345
2014 Yoneda J, Otsuka T, Nakajima T, Takakura T, Obata T, Pioro-Ladrière M, Lu H, Palmstrøm CJ, Gossard AC, Tarucha S. Fast electrical control of single electron spins in quantum dots with vanishing influence from nuclear spins. Physical Review Letters. 113: 267601. PMID 25615383 DOI: 10.1103/Physrevlett.113.267601  0.361
2014 Wang H, Bahk JH, Kang C, Hwang J, Kim K, Kim J, Burke P, Bowers JE, Gossard AC, Shakouri A, Kim W. Right sizes of nano- and microstructures for high-performance and rigid bulk thermoelectrics. Proceedings of the National Academy of Sciences of the United States of America. 111: 10949-54. PMID 25028497 DOI: 10.1073/Pnas.1403601111  0.322
2014 Colless JI, Croot XG, Stace TM, Doherty AC, Barrett SD, Lu H, Gossard AC, Reilly DJ. Raman phonon emission in a driven double quantum dot. Nature Communications. 5: 3716. PMID 24759675 DOI: 10.1038/Ncomms4716  0.453
2014 Higginbotham AP, Kuemmeth F, Hanson MP, Gossard AC, Marcus CM. Coherent operations and screening in multielectron spin qubits. Physical Review Letters. 112: 026801. PMID 24484035 DOI: 10.1103/PhysRevLett.112.026801  0.588
2014 Liu AY, Zhang C, Snyder A, Lubyshev D, Fastenau JM, Liu AWK, Gossard AC, Bowers JE. MBE growth of P-doped 1.3 μ m InAs quantum dot lasers on silicon Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 32. DOI: 10.1116/1.4864148  0.412
2014 Lee S, Huang CY, Cohen-Elias D, Thibeault BJ, Mitchell W, Chobpattana V, Stemmer S, Gossard AC, Rodwell MJW. Highly scalable raised source/drain InAs quantum well MOSFETs exhibiting ION = 482 μA/μm at IOFF = 100 nA/μm and V DD = 0.5 V Ieee Electron Device Letters. 35: 621-623. DOI: 10.1109/Led.2014.2317146  0.338
2014 Staley NE, Ray N, Kastner MA, Hanson MP, Gossard AC. Electric-field-driven insulating-to-conducting transition in a mesoscopic quantum dot lattice Physical Review B - Condensed Matter and Materials Physics. 90. DOI: 10.1103/Physrevb.90.195443  0.651
2014 Banks HB, Hofmann A, Mack S, Gossard AC, Sherwin MS. Antenna-boosted mixing of terahertz and near-infrared radiation Applied Physics Letters. 105. DOI: 10.1063/1.4894634  0.303
2014 Suen JY, Krogen PR, Preu S, Lu H, Gossard AC, Driscoll DC, Lubin PM. Measurement and modeling of ErAs:In0.53Ga0.47As nanocomposite photoconductivity for THz generation at 1.55 μ m pump wavelength Journal of Applied Physics. 116. DOI: 10.1063/1.4886180  0.348
2014 Favaloro T, Ziabari A, Bahk JH, Burke P, Lu H, Bowers J, Gossard A, Bian Z, Shakouri A. High temperature thermoreflectance imaging and transient Harman characterization of thermoelectric energy conversion devices Journal of Applied Physics. 116. DOI: 10.1063/1.4885198  0.308
2014 Scheller CP, Heizmann S, Bedner K, Giss D, Meschke M, Zumbühl DM, Zimmerman JD, Gossard AC. Silver-epoxy microwave filters and thermalizers for millikelvin experiments Applied Physics Letters. 104. DOI: 10.1063/1.4880099  0.65
2014 Huang CY, Law JJM, Lu H, Jena D, Rodwell MJW, Gossard AC. Two dimensional electron transport in modulation-doped In 0.53Ga0.47As/AlAs0.56Sb0.44 ultrathin quantum wells Journal of Applied Physics. 115. DOI: 10.1063/1.4869498  0.38
2014 Liu AY, Zhang C, Norman J, Snyder A, Lubyshev D, Fastenau JM, Liu AWK, Gossard AC, Bowers JE. High performance continuous wave 1.3 μ m quantum dot lasers on silicon Applied Physics Letters. 104. DOI: 10.1063/1.4863223  0.376
2014 Maradan D, Casparis L, Liu TM, Biesinger DEF, Scheller CP, Zumbühl DM, Zimmerman JD, Gossard AC. GaAs quantum dot thermometry using direct transport and charge sensing Journal of Low Temperature Physics. 175: 784-798. DOI: 10.1007/S10909-014-1169-6  0.657
2013 Colless JI, Mahoney AC, Hornibrook JM, Doherty AC, Lu H, Gossard AC, Reilly DJ. Dispersive readout of a few-electron double quantum dot with fast RF gate sensors. Physical Review Letters. 110: 046805. PMID 25166190 DOI: 10.1103/Physrevlett.110.046805  0.41
2013 Banks H, Zaks B, Yang F, Mack S, Gossard AC, Liu R, Sherwin MS. Terahertz electron-hole recollisions in GaAs/AlGaAs quantum wells: robustness to scattering by optical phonons and thermal fluctuations. Physical Review Letters. 111: 267402. PMID 24483813 DOI: 10.1103/Physrevlett.111.267402  0.428
2013 Medford J, Beil J, Taylor JM, Bartlett SD, Doherty AC, Rashba EI, DiVincenzo DP, Lu H, Gossard AC, Marcus CM. Self-consistent measurement and state tomography of an exchange-only spin qubit. Nature Nanotechnology. 8: 654-9. PMID 23995458 DOI: 10.1038/Nnano.2013.168  0.391
2013 Medford J, Beil J, Taylor JM, Rashba EI, Lu H, Gossard AC, Marcus CM. Quantum-dot-based resonant exchange qubit. Physical Review Letters. 111: 050501. PMID 23952375 DOI: 10.1103/Physrevlett.111.050501  0.304
2013 Kawasaki JK, Schultz BD, Lu H, Gossard AC, Palmstrøm CJ. Surface-mediated tunable self-assembly of single crystal semimetallic ErSb/GaSb nanocomposite structures. Nano Letters. 13: 2895-901. PMID 23701166 DOI: 10.1021/Nl4012563  0.321
2013 Ribeiro H, Burkard G, Petta JR, Lu H, Gossard AC. Coherent adiabatic spin control in the presence of charge noise using tailored pulses. Physical Review Letters. 110: 086804. PMID 23473186 DOI: 10.1103/Physrevlett.110.086804  0.371
2013 Huang CY, Law JJM, Lu H, Rodwell MJW, Gossard AC. Development of AlAsSb as a barrier material for ultra-thin-channel InGaAs nMOSFETs Materials Research Society Symposium Proceedings. 1561: 1-6. DOI: 10.1557/Opl.2013.821  0.341
2013 Lee S, Huang CY, Cohen-Elias D, Law JJM, Chobpattanna V, Krämer S, Thibeault BJ, Mitchell W, Stemmer S, Gossard AC, Rodwell MJW. High performance raised source/drain InAs/In0.53Ga 0.47As channel metal-oxide-semiconductor field-effect-transistors with reduced leakage using a vertical spacer Applied Physics Letters. 103. DOI: 10.1063/1.4838660  0.311
2013 Huang CY, Lee S, Cohen-Elias D, Law JJM, Carter AD, Chobpattana V, Stemmer S, Gossard AC, Rodwell MJW. Reduction of leakage current in In0.53Ga0.47As channel metal-oxide-semiconductor field-effect-transistors using AlAs 0.56Sb0.44 confinement layers Applied Physics Letters. 103. DOI: 10.1063/1.4831683  0.303
2013 Baraskar A, Gossard AC, Rodwell MJW. Lower limits to metal-semiconductor contact resistance: Theoretical models and experimental data Journal of Applied Physics. 114. DOI: 10.1063/1.4826205  0.338
2012 High AA, Leonard JR, Remeika M, Butov LV, Hanson M, Gossard AC. Reply to "comment on 'condensation of excitons in a trap'". Nano Letters. 12: 5422. PMID 22978516 DOI: 10.1021/Nl302928V  0.584
2012 High AA, Leonard JR, Remeika M, Butov LV, Hanson M, Gossard AC. Condensation of excitons in a trap. Nano Letters. 12: 2605-9. PMID 22509898 DOI: 10.1021/Nl300983N  0.61
2012 Medford J, Cywi?ski ?, Barthel C, Marcus CM, Hanson MP, Gossard AC. Scaling of dynamical decoupling for spin qubits. Physical Review Letters. 108: 086802. PMID 22463554 DOI: 10.1103/Physrevlett.108.086802  0.552
2012 Simes RJ, Yan RH, Geels R, Coldren LA, English JH, Gossard AC. Fabry-Perot multiple-quantum well index modulator. Applied Optics. 27: 2103-4. PMID 20531720 DOI: 10.1364/Ao.27.002103  0.365
2012 Stehlik J, Dovzhenko Y, Petta JR, Johansson JR, Nori F, Lu H, Gossard AC. Landau-Zener-Stückelberg interferometry of a single electron charge qubit Physical Review B - Condensed Matter and Materials Physics. 86. DOI: 10.1103/Physrevb.86.121303  0.401
2012 Barthel C, Medford J, Bluhm H, Yacoby A, Marcus CM, Hanson MP, Gossard AC. Relaxation and readout visibility of a singlet-triplet qubit in an Overhauser field gradient Physical Review B - Condensed Matter and Materials Physics. 85. DOI: 10.1103/Physrevb.85.035306  0.6
2012 Burke PG, Ismer L, Lu H, Frantz E, Janotti A, Van De Walle CG, Bowers JE, Gossard AC. Electrically active Er doping in InAs, In0.53Ga 0.47As, and GaAs Applied Physics Letters. 101. DOI: 10.1063/1.4769248  0.334
2012 Leonard JR, Remeika M, Kuznetsova YY, High AA, Butov LV, Hanson M, Gossard AC. Transport of indirect excitons in a potential energy gradient 2012 Conference On Lasers and Electro-Optics, Cleo 2012. DOI: 10.1063/1.4722938  0.537
2012 Clinger LE, Pernot G, Buehl TE, Burke PG, Gossard AC, Palmstrom CJ, Shakouri A, Zide JMO. Thermoelectric properties of epitaxial TbAs:InGaAs nanocomposites Journal of Applied Physics. 111. DOI: 10.1063/1.4711095  0.799
2012 Remeika M, Fogler MM, Butov LV, Hanson M, Gossard AC. Two-dimensional electrostatic lattices for indirect excitons Applied Physics Letters. 100. DOI: 10.1063/1.3682302  0.561
2012 Preu S, Kim S, Verma R, Burke PG, Sherwin MS, Gossard AC. An improved model for non-resonant terahertz detection in field-effect transistors Journal of Applied Physics. 111. DOI: 10.1063/1.3676211  0.35
2012 Burke PG, Buehl TE, Gilles P, Lu H, Shakouri A, Palmstrom CJ, Bowers JE, Gossard AC. Controlling n-type carrier density from Er doping of InGaAs with MBE growth temperature Journal of Electronic Materials. 41: 948-953. DOI: 10.1007/S11664-012-2050-5  0.794
2011 Trowbridge CJ, Norman BM, Stephens J, Gossard AC, Awschalom DD, Sih V. Electron spin polarization-based integrated photonic devices. Optics Express. 19: 14845-51. PMID 21934845 DOI: 10.1364/Oe.19.014845  0.528
2011 van Weperen I, Armstrong BD, Laird EA, Medford J, Marcus CM, Hanson MP, Gossard AC. Charge-state conditional operation of a spin qubit. Physical Review Letters. 107: 030506. PMID 21838342 DOI: 10.1103/Physrevlett.107.030506  0.6
2011 Burke PG, Lu H, Rudawski NG, Stemmer S, Gossard AC, Bahk JH, Bowers JE. Electrical properties of Er-doped In0.53Ga0.47As Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 29. DOI: 10.1116/1.3559480  0.361
2011 Buschbeck J, Kawasaki J, Buehl TE, Gossard AC, Palmstrøm CJ. Growth of epitaxial NiTi shape memory alloy films on GaAs(001) and evidence of martensitic transformation Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 29. DOI: 10.1116/1.3556973  0.78
2011 Cassels LE, Buehl TE, Burke PG, Palmstrøm CJ, Gossard AC, Pernot G, Shakouri A, Haughn CR, Doty MF, Zide JMO. Growth and characterization of TbAs:GaAs nanocomposites Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 29. DOI: 10.1116/1.3555388  0.801
2011 Buehl TE, Palmstrøm CJ, Gossard AC. Embedded ErAs nanorods on GaAs (n11) substrates by molecular beam epitaxy Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 29. DOI: 10.1116/1.3549888  0.799
2011 Kawasaki JK, Timm R, Buehl TE, Lundgren E, Mikkelsen A, Gossard AC, Palmstrøm CJ. Cross-sectional scanning tunneling microscopy and spectroscopy of semimetallic ErAs nanostructures embedded in GaAs Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 29. DOI: 10.1116/1.3547713  0.787
2011 Toledo NG, Cruz SC, Neufeld CJ, Lang JR, Scarpulla MA, Buehl T, Gossard AC, Denbaars SP, Speck JS, Mishra UK. Integrated non-III-nitride/III-nitride tandem solar cell Device Research Conference - Conference Digest, Drc. 265-266. DOI: 10.1109/DRC.2011.5994525  0.467
2011 Dovzhenko Y, Stehlik J, Petersson KD, Petta JR, Lu H, Gossard AC. Nonadiabatic quantum control of a semiconductor charge qubit Physical Review B - Condensed Matter and Materials Physics. 84. DOI: 10.1103/Physrevb.84.161302  0.367
2011 Sciambi A, Pelliccione M, Lilly MP, Bank SR, Gossard AC, Pfeiffer LN, West KW, Goldhaber-Gordon D. Vertical field-effect transistor based on wave-function extension Physical Review B - Condensed Matter and Materials Physics. 84. DOI: 10.1103/Physrevb.84.085301  0.522
2011 Nakamura S, Yamauchi Y, Hashisaka M, Chida K, Kobayashi K, Ono T, Leturcq R, Ensslin K, Saito K, Utsumi Y, Gossard AC. Fluctuation theorem and microreversibility in a quantum coherent conductor Physical Review B - Condensed Matter and Materials Physics. 83. DOI: 10.1103/Physrevb.83.155431  0.39
2011 Sciambi A, Pelliccione M, Bank SR, Gossard AC, Goldhaber-Gordon D. Erratum: “Virtual scanning tunneling microscopy: A local spectroscopic probe of two-dimensional electron systems” [Appl. Phys. Lett. 97, 132103 (2010)] Applied Physics Letters. 98: 089901. DOI: 10.1063/1.3554334  0.615
2011 Preu S, Dhler GH, Malzer S, Wang LJ, Gossard AC. Tunable, continuous-wave Terahertz photomixer sources and applications Journal of Applied Physics. 109. DOI: 10.1063/1.3552291  0.321
2011 Liu X, Ramu AT, Bowers JE, Palmstrøm CJ, Burke PG, Lu H, Gossard AC. Properties of molecular beam epitaxially grown ScAs:InGaAs and ErAs:InGaAs nanocomposites for thermoelectric applications Journal of Crystal Growth. 316: 56-59. DOI: 10.1016/J.Jcrysgro.2010.09.078  0.324
2010 Barthel C, Medford J, Marcus CM, Hanson MP, Gossard AC. Interlaced dynamical decoupling and coherent operation of a singlet-triplet qubit. Physical Review Letters. 105: 266808. PMID 21231704 DOI: 10.1103/Physrevlett.105.266808  0.573
2010 Reilly DJ, Taylor JM, Petta JR, Marcus CM, Hanson MP, Gossard AC. Exchange control of nuclear spin diffusion in a double quantum dot. Physical Review Letters. 104: 236802. PMID 20867261 DOI: 10.1103/Physrevlett.104.236802  0.622
2010 Sundaram M, Chalmers SA, Hopkins PF, Gossard AC. New quantum structures. Science (New York, N.Y.). 254: 1326-35. PMID 17773602 DOI: 10.1126/Science.254.5036.1326  0.405
2010 Petta JR, Lu H, Gossard AC. A coherent beam splitter for electronic spin states Science. 327: 669-672. DOI: 10.1126/Science.1183628  0.37
2010 Bauerschmidt S, Preu S, Malzer S, Döhler GH, Wang LJ, Lu H, Gossard AC. Continuous wave terahertz emitter arrays for spectroscopy and imaging applications Proceedings of Spie - the International Society For Optical Engineering. 7671. DOI: 10.1117/12.850090  0.305
2010 Zide JMO, Lu H, Onishi T, Schroeder JL, Bowers JE, Kobayashi NP, Sands TD, Gossard AC, Shakouri A. Novel metal/semiconductor nanocomposite and superlattice materials and devices for thermoelectrics Proceedings of Spie - the International Society For Optical Engineering. 7683. DOI: 10.1117/12.850058  0.328
2010 Baraskar A, Wistey MA, Jain V, Lobisser E, Singisetti U, Burek G, Lee YJ, Thibeault B, Gossard A, Rodwell M. Ex situ Ohmic contacts to n-InGaAs Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 28: C5l7-C5l9. DOI: 10.1116/1.3454372  0.565
2010 Zhao ZY, Schwagmann A, Ospald F, Von Klitzing K, Smet JH, Driscoll DC, Hanson MP, Lu H, Gossard AC. 1.55 μm photoconductive THz emitters based on ErAs:In 0.53Ga0.47As superlattices 2010 Ieee Photonics Society Winter Topicals Meeting Series, Wtm 2010. 44-45. DOI: 10.1109/PHOTWTM.2010.5421971  0.542
2010 Petersson KD, Petta JR, Lu H, Gossard AC. Quantum coherence in a one-electron semiconductor charge qubit Physical Review Letters. 105. DOI: 10.1103/Physrevlett.105.246804  0.428
2010 Norman BM, Trowbridge CJ, Stephens J, Gossard AC, Awschalom DD, Sih V. Mapping spin-orbit splitting in strained (In,Ga)As epilayers Physical Review B - Condensed Matter and Materials Physics. 82. DOI: 10.1103/Physrevb.82.081304  0.509
2010 Laird EA, Taylor JM, Divincenzo DP, Marcus CM, Hanson MP, Gossard AC. Coherent spin manipulation in an exchange-only qubit Physical Review B - Condensed Matter and Materials Physics. 82. DOI: 10.1103/Physrevb.82.075403  0.565
2010 Yi W, Narayanamurti V, Lu H, Scarpulla MA, Gossard AC. Probing semiconductor band structures and heterojunction interface properties with ballistic carrier emission: GaAs/ Alx Ga 1-x As as a model system Physical Review B - Condensed Matter and Materials Physics. 81. DOI: 10.1103/Physrevb.81.235325  0.589
2010 Bahk JH, Bian Z, Zebarjadi M, Zide JMO, Lu H, Xu D, Feser JP, Zeng G, Majumdar A, Gossard AC, Shakouri A, Bowers JE. Thermoelectric figure of merit of ( In0.53 Ga0.47 As )0.8 ( In0.52 Al0.48 As ) 0.2 III-V semiconductor alloys Physical Review B - Condensed Matter and Materials Physics. 81. DOI: 10.1103/Physrevb.81.235209  0.334
2010 Barthel C, Kjærgaard M, Medford J, Stopa M, Marcus CM, Hanson MP, Gossard AC. Fast sensing of double-dot charge arrangement and spin state with a radio-frequency sensor quantum dot Physical Review B - Condensed Matter and Materials Physics. 81. DOI: 10.1103/Physrevb.81.161308  0.594
2010 Yang S, Butov LV, Levitov LS, Simons BD, Gossard AC. Exciton front propagation in photoexcited GaAs quantum wells Physical Review B - Condensed Matter and Materials Physics. 81. DOI: 10.1103/Physrevb.81.115320  0.376
2010 Preu S, Malzer S, Döhler GH, Lu H, Gossard AC, Wang LJ. Efficient III-V tunneling diodes with ErAs recombination centers Semiconductor Science and Technology. 25. DOI: 10.1088/0268-1242/25/11/115004  0.37
2010 Sciambi A, Pelliccione M, Bank SR, Gossard AC, Goldhaber-Gordon D. Virtual scanning tunneling microscopy: A local spectroscopic probe of two-dimensional electron systems Applied Physics Letters. 97. DOI: 10.1063/1.3492440  0.545
2010 Schwagmann A, Zhao ZY, Ospald F, Lu H, Driscoll DC, Hanson MP, Gossard AC, Smet JH. Terahertz emission characteristics of ErAs:InGaAs-based photoconductive antennas excited at 1.55 μm Applied Physics Letters. 96. DOI: 10.1063/1.3374401  0.613
2010 Buehl TE, Lebeau JM, Stemmer S, Scarpulla MA, Palmstrøm CJ, Gossard AC. Growth of embedded ErAs nanorods on (4 1 1)A and (4 1 1)B GaAs by molecular beam epitaxy Journal of Crystal Growth. 312: 2089-2092. DOI: 10.1016/J.Jcrysgro.2010.04.031  0.799
2009 Barthel C, Reilly DJ, Marcus CM, Hanson MP, Gossard AC. Rapid single-shot measurement of a singlet-triplet qubit. Physical Review Letters. 103: 160503. PMID 19905680 DOI: 10.1103/Physrevlett.103.160503  0.592
2009 High AA, Thomas AK, Grosso G, Remeika M, Hammack AT, Meyertholen AD, Fogler MM, Butov LV, Hanson M, Gossard AC. Trapping indirect excitons in a GaAs quantum-well structure with a diamond-shaped electrostatic trap. Physical Review Letters. 103: 087403. PMID 19792761 DOI: 10.1103/Physrevlett.103.087403  0.628
2009 Singisetti U, Wistey MA, Burek GJ, Baraskar AK, Thibeault BJ, Gossard AC, Rodwell MJW, Shin B, Kim EJ, McIntyre PC, Yu B, Yuan Y, Wang D, Taur Y, Asbeck P, et al. In0.53Ga0.47As Channel MOSFETs with self-aligned InAs source/drain formed by MEE regrowth Ieee Electron Device Letters. 30: 1128-1130. DOI: 10.1109/Led.2009.2031304  0.306
2009 Lim J, Lee WR, Sim HS, Averitt RD, Zide JMO, Gossard AC, Ahn J. Effect of nonuniform continuum density of states on a Fano resonance in semiconductor quantum wells Physical Review B - Condensed Matter and Materials Physics. 80. DOI: 10.1103/Physrevb.80.035322  0.396
2009 Yamauchi Y, Hashisaka M, Nakamura S, Chida K, Kasai S, Ono T, Leturcq R, Ensslin K, Driscoll DC, Gossard AC, Kobayashi K. Universality of Bias- and Temperature-induced Dephasing in Ballistic Electronic Interferometers Physical Review B. 79: 161306. DOI: 10.1103/Physrevb.79.161306  0.347
2009 Gasser U, Gustavsson S, Küng B, Ensslin K, Ihn T, Driscoll DC, Gossard AC. Statistical electron excitation in a double quantum dot induced by two independent quantum point contacts Physical Review B. 79: 35303. DOI: 10.1103/Physrevb.79.035303  0.415
2009 Laird EA, Barthel C, Rashba EI, Marcus CM, Hanson MP, Gossard AC. A new mechanism of electric dipole spin resonance: Hyperfine coupling in quantum dots Semiconductor Science and Technology. 24. DOI: 10.1088/0268-1242/24/6/064004  0.649
2009 Yi W, Narayanamurti V, Lu H, Scarpulla MA, Gossard AC, Huang Y, Ryou JH, Dupuis RD. Bandgap and band offsets determination of semiconductor heterostructures using three-terminal ballistic carrier spectroscopy Applied Physics Letters. 95. DOI: 10.1063/1.3224914  0.61
2009 Likovich EM, Russell KJ, Narayanamurti V, Lu H, Gossard AC. Direct injection tunnel spectroscopy of a p-n junction Applied Physics Letters. 95. DOI: 10.1063/1.3177191  0.416
2009 Azad AK, Chen HT, Kasarla SR, Taylor AJ, Tian Z, Lu X, Zhang W, Lu H, Gossard AC, O'Hara JF. Ultrafast optical control of terahertz surface plasmons in subwavelength hole arrays at room temperature Applied Physics Letters. 95. DOI: 10.1063/1.3168510  0.327
2009 Zebarjadi M, Esfarjani K, Shakouri A, Bahk J, Bian Z, Zeng G, Bowers J, Lu H, Zide J, Gossard A. Erratum: “Effect of nanoparticle scattering on thermoelectric power factor” [Appl. Phys. Lett. 94, 202105 (2009)] Applied Physics Letters. 95: 019901. DOI: 10.1063/1.3167770  0.72
2009 Gustavsson S, Leturcq R, Ihn T, Ensslin K, Gossard AC. Electrons in quantum dots: One by one Journal of Applied Physics. 105: 122401. DOI: 10.1063/1.3116227  0.426
2009 Koh YK, Singer SL, Kim W, Zide JMO, Lu H, Cahill DG, Majumdar A, Gossard AC. Comparison of the 3ω method and time-domain thermoreflectance for measurements of the cross-plane thermal conductivity of epitaxial semiconductors Journal of Applied Physics. 105. DOI: 10.1063/1.3078808  0.302
2009 Scarpulla MA, Gallinat CS, Mack S, Speck JS, Gossard AC. GdN (1 1 1) heteroepitaxy on GaN (0 0 0 1) by N2 plasma and NH3 molecular beam epitaxy Journal of Crystal Growth. 311: 1239-1244. DOI: 10.1016/J.Jcrysgro.2008.12.050  0.725
2009 Burek GJ, Wistey MA, Singisetti U, Nelson A, Thibeault BJ, Bank SR, Rodwell MJW, Gossard AC. Height-selective etching for regrowth of self-aligned contacts using MBE Journal of Crystal Growth. 311: 1984-1987. DOI: 10.1016/J.Jcrysgro.2008.11.012  0.559
2009 Singisetti U, Wistey MA, Burek GJ, Arkun E, Baraskar AK, Sun Y, Kiewra EW, Thibeault BJ, Gossard AC, Palmstrøm CJ, Rodwell MJW. InGaAs channel MOSFET with self-aligned source/drain MBE regrowth technology Physica Status Solidi (C) Current Topics in Solid State Physics. 6: 1394-1398. DOI: 10.1002/Pssc.200881532  0.34
2008 Reilly DJ, Taylor JM, Laird EA, Petta JR, Marcus CM, Hanson MP, Gossard AC. Measurement of temporal correlations of the overhauser field in a double quantum dot. Physical Review Letters. 101: 236803. PMID 19113577 DOI: 10.1103/Physrevlett.101.236803  0.615
2008 Reilly DJ, Taylor JM, Petta JR, Marcus CM, Hanson MP, Gossard AC. Suppressing spin qubit dephasing by nuclear state preparation. Science (New York, N.Y.). 321: 817-21. PMID 18687959 DOI: 10.1126/Science.1159221  0.587
2008 High AA, Novitskaya EE, Butov LV, Hanson M, Gossard AC. Control of exciton fluxes in an excitonic integrated circuit. Science (New York, N.Y.). 321: 229-31. PMID 18566248 DOI: 10.1126/Science.1157845  0.548
2008 Chen HT, Lu H, Azad AK, Averitt RD, Gossard AC, Trugman SA, O'Hara JF, Taylor AJ. Electronic control of extraordinary terahertz transmission through subwavelength metal hole arrays. Optics Express. 16: 7641-8. PMID 18545471 DOI: 10.1364/Oe.16.007641  0.36
2008 Preu S, Schwefel HG, Malzer S, Döhler GH, Wang LJ, Hanson M, Zimmerman JD, Gossard AC. Coupled whispering gallery mode resonators in the Terahertz frequency range. Optics Express. 16: 7336-43. PMID 18545439 DOI: 10.1364/Oe.16.007336  0.702
2008 Kim W, Singer SL, Majumdar A, Zide JM, Klenov D, Gossard AC, Stemmer S. Reducing thermal conductivity of crystalline solids at high temperature using embedded nanostructures. Nano Letters. 8: 2097-9. PMID 18507477 DOI: 10.1021/Nl080189T  0.747
2008 Petta JR, Taylor JM, Johnson AC, Yacoby A, Lukin MD, Marcus CM, Hanson MP, Gossard AC. Dynamic nuclear polarization with single electron spins. Physical Review Letters. 100: 067601. PMID 18352516 DOI: 10.1103/Physrevlett.100.067601  0.611
2008 Amasha S, Maclean K, Radu IP, Zumbühl DM, Kastner MA, Hanson MP, Gossard AC. Electrical control of spin relaxation in a quantum dot. Physical Review Letters. 100: 046803. PMID 18352316 DOI: 10.1103/Physrevlett.100.046803  0.58
2008 Myers RC, Mikkelsen MH, Tang JM, Gossard AC, Flatté ME, Awschalom DD. Zero-field optical manipulation of magnetic ions in semiconductors. Nature Materials. 7: 203-8. PMID 18278049 DOI: 10.1038/Nmat2123  0.654
2008 Gustavsson S, Studer M, Leturcq R, Ihn T, Ensslin K, Driscoll DC, Gossard AC. Detecting single-electron tunneling involving virtual processes in real time Physical Review B. 78: 155309. DOI: 10.1103/Physrevb.78.155309  0.409
2008 Amasha S, MacLean K, Radu IP, Zumbühl DM, Kastner MA, Hanson MP, Gossard AC. Spin-dependent tunneling of single electrons into an empty quantum dot Physical Review B - Condensed Matter and Materials Physics. 78. DOI: 10.1103/Physrevb.78.041306  0.658
2008 Fogler MM, Yang S, Hammack AT, Butov LV, Gossard AC. Effect of spatial resolution on the estimates of the coherence length of excitons in quantum wells Physical Review B - Condensed Matter and Materials Physics. 78. DOI: 10.1103/Physrevb.78.035411  0.385
2008 Singisetti U, Wistey MA, Zimmerman JD, Thibeault BJ, Rodwell MJW, Gossard AC, Bank SR. Ultralow resistance in situ Ohmic contacts to InGaAs/InP Applied Physics Letters. 93. DOI: 10.1063/1.3013572  0.715
2008 Azad AK, Prasankumar RP, Talbayev D, Taylor AJ, Averitt RD, Zide JMO, Lu H, Gossard AC, O'Hara JF. Carrier dynamics in InGaAs with embedded ErAs nanoislands Applied Physics Letters. 93. DOI: 10.1063/1.2989127  0.338
2008 Winbow AG, Butov LV, Gossard AC. Photon storage with subnanosecond readout rise time in coupled quantum wells Journal of Applied Physics. 104. DOI: 10.1063/1.2978214  0.381
2008 Chen HT, Palit S, Tyler T, Bingham CM, Zide JMO, O'Hara JF, Smith DR, Gossard AC, Averitt RD, Padilla WJ, Jokerst NM, Taylor AJ. Hybrid metamaterials enable fast electrical modulation of freely propagating terahertz waves Applied Physics Letters. 93. DOI: 10.1063/1.2978071  0.314
2008 Kim S, Zimmerman JD, Focardi P, Gossard AC, Wu DH, Sherwin MS. Room temperature terahertz detection based on bulk plasmons in antenna-coupled GaAs field effect transistors Applied Physics Letters. 92. DOI: 10.1063/1.2947587  0.665
2008 Preu S, Malzer S, Döhler GH, Zhao QZ, Hanson M, Zimmerman JD, Gossard AC, Wang LJ. Interference between two coherently driven monochromatic terahertz sources Applied Physics Letters. 92. DOI: 10.1063/1.2938874  0.708
2008 Bell L, Rogers J, Heyman JN, Zimmerman JD, Gossard AC. Terahertz emission by quantum beating in a modulation doped parabolic quantum well Applied Physics Letters. 92. DOI: 10.1063/1.2908868  0.688
2008 Scarpulla MA, Zide JMO, LeBeau JM, Van De Walle CG, Gossard AC, Delaney KT. Near-infrared absorption and semimetal-semiconductor transition in 2 nm ErAs nanoparticles embedded in GaAs and AlAs Applied Physics Letters. 92. DOI: 10.1063/1.2908213  0.603
2008 Ospald F, Maryenko D, Von Klitzing K, Driscoll DC, Hanson MP, Lu H, Gossard AC, Smet JH. 1.55 μm ultrafast photoconductive switches based on ErAs:InGaAs Applied Physics Letters. 92. DOI: 10.1063/1.2907335  0.597
2008 Myers RC, Mikkelsen MH, Tang JM, Gossard AC, Flatté ME, Awschalom DD. Zero-field optical manipulation of magnetic ions in semiconductors (Nature Materials (2008) 7 (203-208) ) Nature Materials. 7: 339. DOI: 10.1038/Nmat2158  0.652
2008 Gildemeister AE, Ihn T, Sigrist M, Ensslin K, Driscoll DC, Gossard AC. Lever arm of a metallic tip in scanning gate experiments Physica E: Low-Dimensional Systems and Nanostructures. 40: 1640-1641. DOI: 10.1016/J.Physe.2007.10.033  0.379
2008 Gustavsson S, Leturcq R, Studer M, Ihn T, Ensslin K, Driscoll DC, Gossard AC. Time-resolved interference experiments in a solid state environment Physica E-Low-Dimensional Systems & Nanostructures. 40: 1044-1047. DOI: 10.1016/J.Physe.2007.09.209  0.402
2007 Laird EA, Barthel C, Rashba EI, Marcus CM, Hanson MP, Gossard AC. Hyperfine-mediated gate-driven electron spin resonance. Physical Review Letters. 99: 246601. PMID 18233467 DOI: 10.1103/Physrevlett.99.246601  0.622
2007 Zhang Y, DiCarlo L, McClure DT, Yamamoto M, Tarucha S, Marcus CM, Hanson MP, Gossard AC. Noise correlations in a Coulomb-blockaded quantum dot. Physical Review Letters. 99: 036603. PMID 17678305 DOI: 10.1103/Physrevlett.99.036603  0.562
2007 Chen HT, Padilla WJ, Zide JM, Bank SR, Gossard AC, Taylor AJ, Averitt RD. Ultrafast optical switching of terahertz metamaterials fabricated on ErAs/GaAs nanoisland superlattices. Optics Letters. 32: 1620-2. PMID 17572725 DOI: 10.1364/Ol.32.001620  0.793
2007 Winbow AG, Hammack AT, Butov LV, Gossard AC. Photon storage with nanosecond switching in coupled quantum well nanostructures. Nano Letters. 7: 1349-51. PMID 17425373 DOI: 10.1021/Nl070386C  0.366
2007 McClure DT, Dicarlo L, Zhang Y, Engel HA, Marcus CM, Hanson MP, Gossard AC. Tunable noise cross correlations in a double quantum dot. Physical Review Letters. 98: 056801. PMID 17358883 DOI: 10.1103/Physrevlett.98.056801  0.592
2007 MacLean K, Amasha S, Radu IP, Zumbühl DM, Kastner MA, Hanson MP, Gossard AC. Energy-dependent tunneling in a quantum dot. Physical Review Letters. 98: 036802. PMID 17358709 DOI: 10.1103/Physrevlett.98.036802  0.646
2007 Zeng G, Bahk J, Bowers JE, Lu H, Zide JMO, Gossard AC, Singh R, Bian Z, Shakouri A, Singer SL, Kim W, Majumdar A. Segmented Power Generator Modules of Bi2Te3 and ErAs:InGaAlAs Embedded with ErAs Nanoparticles Mrs Proceedings. 1044. DOI: 10.1557/Proc-1044-U10-06  0.313
2007 Ihn T, Ellenberger C, Ensslin K, Yannouleas C, Landman U, Driscoll DC, Gossard AC. Quantum dots based on parabolic quantum wells: Importance of electronic correlations International Journal of Modern Physics B. 21: 1316-1325. DOI: 10.1142/S0217979207042781  0.436
2007 Brown ER, Young AC, Bjarnason JE, Zimmerman JD, Gossard AC, Kazemi H. Millimeter and sub-millimeter wave performance of an ERAS:Inalgaas Schottky diode coupled to a single-turn square spiral International Journal of High Speed Electronics and Systems. 17: 383-394. DOI: 10.1142/S0129156407004576  0.622
2007 Landy NI, Chen HT, O'Hara JF, Zide JMO, Gossard AC, Highstrete C, Lee M, Taylor AJ, Averitt RD, Padilla WJ. Terahertz metamaterials for active, tunable, and dynamical devices Proceedings of Spie - the International Society For Optical Engineering. 6581. DOI: 10.1117/12.724394  0.3
2007 Bian Z, Zebarjadi M, Singh R, Ezzahri Y, Shakouri A, Zeng G, Bahk JH, Bowers JE, Zide JMO, Gossard AC. Cross-plane Seebeck coefficient and Lorenz number in superlattices Physical Review B - Condensed Matter and Materials Physics. 76. DOI: 10.1103/Physrevb.76.205311  0.323
2007 Hammack AT, Butov LV, Mouchliadis L, Ivanov AL, Gossard AC. Kinetics of indirect excitons in an optically induced trap in GaAs quantum wells Physical Review B - Condensed Matter and Materials Physics. 76. DOI: 10.1103/Physrevb.76.193308  0.377
2007 Yi W, Narayanamurti V, Zide JMO, Bank SR, Gossard AC. Probing energy barriers and quantum confined states of buried semiconductor heterostructures with ballistic carrier injection: An experimental study Physical Review B - Condensed Matter and Materials Physics. 75. DOI: 10.1103/Physrevb.75.115333  0.63
2007 Stern NP, Myers RC, Poggio M, Gossard AC, Awschalom DD. Confinement engineering of s-d exchange interactions in Ga1-x Mnx As/Aly Ga1-y As quantum wells Physical Review B - Condensed Matter and Materials Physics. 75. DOI: 10.1103/Physrevb.75.045329  0.707
2007 Yang S, Mintsev AV, Hammack AT, Butov LV, Gossard AC. Repulsive interaction in the macroscopically ordered exciton state in GaAs Alx Ga1-x As coupled quantum well structures Physical Review B - Condensed Matter and Materials Physics. 75. DOI: 10.1103/Physrevb.75.033311  0.388
2007 Holleitner AW, Sih V, Myers RC, Gossard AC, Awschalom DD. Dimensionally constrained D'yakonov-Perel' spin relaxation in n-lnGaAs channels: Transition from 2D to 1D New Journal of Physics. 9. DOI: 10.1088/1367-2630/9/9/342  0.659
2007 Schleser R, Kicin S, Roth C, Ebneter C, Leturcq R, Ensslin K, Driscoll DC, Gossard AC. Influence of HCl etching on the electronic properties of LAO-defined nanostructures Semiconductor Science and Technology. 22: 337-341. DOI: 10.1088/0268-1242/22/4/007  0.326
2007 Crook AM, Lind E, Griffith Z, Rodwell MJW, Zimmerman JD, Gossard AC, Bank SR. Low resistance, nonalloyed Ohmic contacts to InGaAs Applied Physics Letters. 91. DOI: 10.1063/1.2806235  0.706
2007 Gildemeister AE, Ihn T, Schleser R, Ensslin K, Driscoll DC, Gossard AC. Imaging a coupled quantum dot-quantum point contact system Journal of Applied Physics. 102. DOI: 10.1063/1.2787163  0.414
2007 Hanson MP, Gossard AC, Brown ER. Infrared surface plasmon resonances due to Er-V semimetallic nanoparticles in III-V semiconductor matrices Journal of Applied Physics. 102. DOI: 10.1063/1.2761846  0.589
2007 Preu S, Renner FH, Malzer S, Döhler GH, Wang LJ, Hanson M, Gossard AC, Wilkinson TLJ, Brown ER. Efficient terahertz emission from ballistic transport enhanced n-i-p-n-i-p superlattice photomixers Applied Physics Letters. 90: 212115. DOI: 10.1063/1.2743400  0.57
2007 Gildemeister AE, Ihn T, Sigrist M, Ensslin K, Driscoll DC, Gossard AC. In situ treatment of a scanning gate microscopy tip Applied Physics Letters. 90. DOI: 10.1063/1.2742314  0.362
2007 Young AC, Zimmerman JD, Brown ER, Gossard AC. Low-frequency noise in epitaxially grown Schottky junctions Journal of Applied Physics. 101. DOI: 10.1063/1.2721774  0.633
2007 Klenov D, LeBeau J, Zide J, Gossard A, Stemmer S. Combination of TEM and STEM to Investigate the Self-Assembly of Epitaxial Nanocomposites Microscopy and Microanalysis. 13. DOI: 10.1017/S1431927607077252  0.717
2007 Hanson MP, Bank SR, Zide JMO, Zimmerman JD, Gossard AC. Controlling electronic properties of epitaxial nanocomposites of dissimilar materials Journal of Crystal Growth. 301: 4-9. DOI: 10.1016/J.Jcrysgro.2006.11.250  0.789
2006 Yang S, Hammack AT, Fogler MM, Butov LV, Gossard AC. Coherence length of cold exciton gases in coupled quantum wells. Physical Review Letters. 97: 187402. PMID 17155574 DOI: 10.1103/Physrevlett.97.187402  0.407
2006 Chen HT, Padilla WJ, Zide JM, Gossard AC, Taylor AJ, Averitt RD. Active terahertz metamaterial devices. Nature. 444: 597-600. PMID 17136089 DOI: 10.1038/nature05343  0.744
2006 Sih V, Lau WH, Myers RC, Horowitz VR, Gossard AC, Awschalom DD. Generating spin currents in semiconductors with the spin Hall effect. Physical Review Letters. 97: 096605. PMID 17026386 DOI: 10.1103/Physrevlett.97.096605  0.658
2006 Laird EA, Petta JR, Johnson AC, Marcus CM, Yacoby A, Hanson MP, Gossard AC. Effect of exchange interaction on spin dephasing in a double quantum dot. Physical Review Letters. 97: 056801. PMID 17026127 DOI: 10.1103/Physrevlett.97.056801  0.645
2006 Holleitner AW, Sih V, Myers RC, Gossard AC, Awschalom DD. Suppression of spin relaxation in submicron InGaAs wires. Physical Review Letters. 97: 036805. PMID 16907530 DOI: 10.1103/Physrevlett.97.036805  0.662
2006 Hammack AT, Griswold M, Butov LV, Smallwood LE, Ivanov AL, Gossard AC. Trapping of cold excitons in quantum well structures with laser light. Physical Review Letters. 96: 227402. PMID 16803343 DOI: 10.1103/Physrevlett.96.227402  0.346
2006 Zumbühl DM, Marcus CM, Hanson MP, Gossard AC. Asymmetry of nonlinear transport and electron interactions in quantum dots. Physical Review Letters. 96: 206802. PMID 16803193 DOI: 10.1103/Physrevlett.96.206802  0.606
2006 Vidan A, Stopa M, Westervelt RM, Hanson M, Gossard AC. Multipeak Kondo effect in one- and two-electron quantum dots. Physical Review Letters. 96: 156802. PMID 16712183 DOI: 10.1103/Physrevlett.96.156802  0.667
2006 Taylor ZD, Brown ER, Bjarnason JE, Hanson MP, Gossard AC. Resonant-optical-cavity photoconductive switch with 0.5% conversion efficiency and 1.0 W peak power. Optics Letters. 31: 1729-31. PMID 16688276 DOI: 10.1364/OL.31.001729  0.525
2006 Ghosh S, Wang WH, Mendoza FM, Myers RC, Li X, Samarth N, Gossard AC, Awschalom DD. Enhancement of spin coherence using Q-factor engineering in semiconductor microdisc lasers. Nature Materials. 5: 261-4. PMID 16565713 DOI: 10.1038/Nmat1587  0.712
2006 Kim W, Zide J, Gossard A, Klenov D, Stemmer S, Shakouri A, Majumdar A. Thermal conductivity reduction and thermoelectric figure of merit increase by embedding nanoparticles in crystalline semiconductors. Physical Review Letters. 96: 045901. PMID 16486849 DOI: 10.1103/Physrevlett.96.045901  0.74
2006 Ivanov AL, Smallwood LE, Hammack AT, Yang S, Butov LV, Gossard AC. Origin of the inner ring in photoluminescence patterns of quantum well excitons Europhysics Letters. 73: 920-926. DOI: 10.1209/Epl/I2006-10002-4  0.369
2006 Brown ER, Kazemi H, Young AC, Zimmerman JD, Wilkinson TLJ, Bjarnason JE, Hacker JB, Gossard AC. High-sensitivity, quasi-optically-coupled semimetal-semiconductor detectors at 104 GHz Proceedings of Spie - the International Society For Optical Engineering. 6212. DOI: 10.1117/12.666473  0.592
2006 Zimmerman JD, Gossard AC, Young AC, Miller MP, Brown ER. ErAs island-stacking growth technique for engineering textured Schottky interfaces Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 24: 1483-1487. DOI: 10.1116/1.2203642  0.631
2006 Bloom FL, Young AC, Myers RC, Brown ER, Gossard AC, Gwinn EG. Tunneling through MnAs particles at a GaAs p+ n+ junction Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 24: 1639-1643. DOI: 10.1116/1.2190680  0.589
2006 Zide JMO, Vashaee D, Bian ZX, Zeng G, Bowers JE, Shakouri A, Gossard AC. Demonstration of electron filtering to increase the Seebeck coefficient in In0.53 Ga0.47 As/In0.53 Ga0.28 Al0.19 As superlattices Physical Review B - Condensed Matter and Materials Physics. 74. DOI: 10.1103/Physrevb.74.205335  0.302
2006 Russell KJ, Narayanamurti V, Appelbaum I, Hanson MP, Gossard AC. Hot-electron mean free path of ErAs thin films grown on GaAs determined by metal-base transistor ballistic electron emission spectroscopy Physical Review B - Condensed Matter and Materials Physics. 74. DOI: 10.1103/Physrevb.74.205330  0.6
2006 Gustavsson S, Leturcq R, Simovič B, Schleser R, Studerus P, Ihn T, Ensslin K, Driscoll DC, Gossard AC. Counting statistics and super-Poissonian noise in a quantum dot : Time-resolved measurements of electron transport Physical Review B. 74: 195305. DOI: 10.1103/Physrevb.74.195305  0.424
2006 Baumgartner A, Ihn T, Ensslin K, Papp G, Peeters F, Maranowski K, Gossard AC. Classical Hall effect in scanning gate experiments Physical Review B. 74. DOI: 10.1103/Physrevb.74.165426  0.638
2006 Myers RC, Sheu BL, Jackson AW, Gossard AC, Schiffer P, Samarth N, Awschalom DD. Antisite effect on hole-mediated ferromagnetism in (Ga,Mn)As Physical Review B - Condensed Matter and Materials Physics. 74. DOI: 10.1103/Physrevb.74.155203  0.683
2006 Sih V, Knotz H, Stephens J, Horowitz VR, Gossard AC, Awschalom DD. Mechanical control of spin-orbit splitting in GaAs and In0.04 Ga0.96 As epilayers Physical Review B - Condensed Matter and Materials Physics. 73. DOI: 10.1103/Physrevb.73.241316  0.526
2006 Lau WH, Sih V, Stern NP, Myers RC, Buell DA, Gossard AC, Awschalom DD. Room temperature electron spin coherence in telecom-wavelength quaternary quantum wells Applied Physics Letters. 89. DOI: 10.1063/1.2358931  0.72
2006 Carmeli I, Bloom F, Gwinn EG, Kreutz TC, Scoby C, Gossard AC, Ray SG, Naaman R. Molecular enhancement of ferromagnetism in GaAs/GaMnAs heterostructures Applied Physics Letters. 89. DOI: 10.1063/1.2236935  0.326
2006 O'Hara JF, Taylor AJ, Averitt RD, Zide JM, Gossard AC. Enhanced terahertz detection via ErAs:GaAs nanoisland superlattices Conference On Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, Cleo/Qels 2006. DOI: 10.1063/1.2216026  0.757
2006 Kihara Rurimo G, Schardt M, Quabis S, Malzer S, Dotzler C, Winkler A, Leuchs G, Döhler GH, Driscoll D, Hanson M, Gossard AC, Pereira SF. Using a quantum well heterostructure to study the longitudinal and transverse electric field components of a strongly focused laser beam Journal of Applied Physics. 100: 023112. DOI: 10.1063/1.2214207  0.62
2006 Gelfand IJ, Amasha S, Zumbühl DM, Kastner MA, Kadow C, Gossard AC. Surface-gated quantum hall effect in an inas heterostructure Applied Physics Letters. 88. DOI: 10.1063/1.2210289  0.672
2006 Yi W, Appelbaum I, Russell KJ, Narayanamurti V, Schalek R, Hanson MP, Gossard AC. Vertically integrated optics for ballistic electron emission luminescence: Device and microscopy characterizations Journal of Applied Physics. 100. DOI: 10.1063/1.2208738  0.644
2006 Kim W, Singer SL, Majumdar A, Vashaee D, Bian Z, Shakouri A, Zeng G, Bowers JE, Zide JMO, Gossard AC. Cross-plane lattice and electronic thermal conductivities of ErAs:InGaAsInGaAlAs superlattices Applied Physics Letters. 88. DOI: 10.1063/1.2207829  0.348
2006 Zide JMO, Kleiman-Shwarsctein A, Strandwitz NC, Zimmerman JD, Steenblock-Smith T, Gossard AC, Forman A, Ivanovskaya A, Stucky GD. Increased efficiency in multijunction solar cells through the incorporation of semimetallic ErAs nanoparticles into the tunnel junction Applied Physics Letters. 88. DOI: 10.1063/1.2196059  0.63
2006 Trumm S, Betz M, Sotier F, Leitenstorfer A, Schwanhäußer A, Eckardt M, Schmidt O, Malzer S, Döhler GH, Hanson M, Driscoll D, Gossard AC. Ultrafast spectroscopy of impact ionization and avalanche multiplication in GaAs Applied Physics Letters. 88: 132113. DOI: 10.1063/1.2191880  0.615
2006 Zeng G, Bowers JE, Zide JMO, Gossard AC, Kim W, Singer S, Majumdar A, Singh R, Bian Z, Zhang Y, Shakouri A. ErAs:InGaAs∕InGaAlAs superlattice thin-film power generator array Applied Physics Letters. 88: 113502. DOI: 10.1063/1.2186387  0.31
2006 Hammack AT, Gippius NA, Yang S, Andreev GO, Butov LV, Hanson M, Gossard AC. Excitons in electrostatic traps Journal of Applied Physics. 99. DOI: 10.1063/1.2181276  0.629
2006 Graf D, Frommenwiler M, Studerus P, Ihn T, Ensslin K, Driscoll DC, Gossard AC. Local oxidation of Ga[Al]As heterostructures with modulated tip-sample voltages Journal of Applied Physics. 99: 53707. DOI: 10.1063/1.2176162  0.383
2006 Young AC, Zimmerman JD, Brown ER, Gossard AC. 1/f noise in all-epitaxial metal-semiconductor diodes Applied Physics Letters. 88. DOI: 10.1063/1.2174837  0.63
2006 Poggio M, Myers RC, Steeves GM, Stern NP, Gossard AC, Awschalom DD. Nuclear and ion spins in semiconductor nanostructures Physica E: Low-Dimensional Systems and Nanostructures. 35: 264-271. DOI: 10.1016/J.Physe.2006.08.032  0.705
2006 Leturcq R, Bianchetti R, Götz G, Ihn T, Ensslin K, Driscoll DC, Gossard AC. Coherent nonlinear transport in quantum rings Physica E-Low-Dimensional Systems & Nanostructures. 35: 327-331. DOI: 10.1016/J.Physe.2006.08.023  0.352
2006 Petta JR, Johnson AC, Taylor JM, Laird EA, Yacoby A, Lukin MD, Marcus CM, Hanson MP, Gossard AC. Preparing, manipulating, and measuring quantum states on a chip Physica E: Low-Dimensional Systems and Nanostructures. 35: 251-256. DOI: 10.1016/J.Physe.2006.08.020  0.63
2006 Leturcq R, Schmid L, Ihn T, Ensslin K, Driscoll DC, Gossard AC. Asymmetries of the conductance matrix in a three-terminal quantum ring in the Coulomb blockade regime Physica E-Low-Dimensional Systems & Nanostructures. 34: 445-448. DOI: 10.1016/J.Physe.2006.03.106  0.389
2006 Schardt M, Winkler A, Rurimo G, Hanson M, Driscoll D, Quabis S, Malzer S, Leuchs G, Döhler G, Gossard A. TE- and TM-polarization-resolved spectroscopy on quantum wells under normal incidence Physica E: Low-Dimensional Systems and Nanostructures. 32: 241-244. DOI: 10.1016/J.Physe.2005.12.168  0.625
2006 Doehler GH, Eckardt M, Schwanhaeusser A, Renner F, Malzer S, Trumm S, Betz M, Sotier F, Leitenstorfer A, Loata G, Loeffler T, Roskos H, Mueller T, Unterrainer K, Driscoll D, ... ... Gossard AC, et al. Ballistic transport in semiconductor nanostructures: From quasi-classical oscillations to novel THz-emitters Pramana. 67: 199-205. DOI: 10.1007/S12043-006-0050-9  0.604
2006 Dolgopolov VT, Deviatov EV, Khrapai VS, Reuter D, Wieck AD, Wixforth A, Campman KL, Gossard AC. Spin ordering: Two different scenarios for the single and doable layer structures in the fractional and integer quantum Hall effect regimes Physica Status Solidi (B) Basic Research. 243: 3648-3652. DOI: 10.1002/Pssb.200642238  0.391
2006 Leturcq R, Schmid L, Ensslin K, Driscoll DC, Gossard AC. Kondo effect in a three-terminal quantum ring Physica Status Solidi B-Basic Solid State Physics. 243: 3653-3657. DOI: 10.1002/Pssb.200642182  0.401
2005 Heller EJ, Aidala KE, LeRoy BJ, Bleszynski AC, Kalben A, Westervelt RM, Maranowski KD, Gossard AC. Thermal averages in a quantum point contact with a single coherent wave packet. Nano Letters. 5: 1285-92. PMID 16178225 DOI: 10.1021/nl0504585  0.558
2005 Petta JR, Johnson AC, Taylor JM, Laird EA, Yacoby A, Lukin MD, Marcus CM, Hanson MP, Gossard AC. Coherent manipulation of coupled electron spins in semiconductor quantum dots. Science (New York, N.Y.). 309: 2180-4. PMID 16141370 DOI: 10.1126/Science.1116955  0.596
2005 Schleser R, Ihn T, Ruh E, Ensslin K, Tews M, Pfannkuche D, Driscoll DC, Gossard AC. Cotunneling-Mediated Transport through Excited States in the Coulomb-Blockade Regime Physical Review Letters. 94: 206805. PMID 16090270 DOI: 10.1103/Physrevlett.94.206805  0.376
2005 Johnson AC, Petta JR, Taylor JM, Yacoby A, Lukin MD, Marcus CM, Hanson MP, Gossard AC. Triplet-singlet spin relaxation via nuclei in a double quantum dot. Nature. 435: 925-8. PMID 15944715 DOI: 10.1038/Nature03815  0.559
2005 LeRoy BJ, Bleszynski AC, Aidala KE, Westervelt RM, Kalben A, Heller EJ, Shaw SE, Maranowski KD, Gossard AC. Imaging electron interferometer. Physical Review Letters. 94: 126801. PMID 15903945 DOI: 10.1103/Physrevlett.94.126801  0.656
2005 Fallahi P, Bleszynski AC, Westervelt RM, Huang J, Walls JD, Heller EJ, Hanson M, Gossard AC. Imaging a single-electron quantum dot. Nano Letters. 5: 223-6. PMID 15794600 DOI: 10.1021/Nl048405V  0.618
2005 Zeng G, Bahk J, Bowers JE, Zide JMO, Gossard AC, Zhang Y, Singh R, Bian Z, Shakouri A, Kim W, Singer S, Majumdar A. 400 element ErAs:InGaAs/InGaAlAs superlattice power generator Mrs Proceedings. 886. DOI: 10.1557/Proc-0886-F12-06  0.317
2005 Shakouri A, Bian Z, Singh R, Zhang Y, Vashaee D, Humphrey TE, Schmidt H, Zide JM, Zeng G, Bahk J, Gossard AC, Bowers JE, Rawat V, Sands TD, Kim W, et al. Solid-State and Vacuum Thermionic Energy Conversion Mrs Proceedings. 886. DOI: 10.1557/PROC-0886-F07-01  0.757
2005 Singh R, Bian Z, Zeng G, Zide J, Christofferson J, Chou H, Gossard A, Bowers J, Shakouri A. Transient Harman Measurement of the Cross-plane ZT of InGaAs/InGaAlAs Superlattices with Embedded ErAs Nanoparticles Mrs Proceedings. 886. DOI: 10.1557/Proc-0886-F04-04  0.766
2005 Kazemi H, Zimmerman JD, Brown ER, Gossard AC, Boreman GD, Hacker JB, Lail B, Middleton C. First MMW characterization of ErAs/InAlGaAs/InP Semimetal-Semiconductor- Schottky diode (S 3) detectors for passive millimeter-wave and infrared imaging Proceedings of Spie - the International Society For Optical Engineering. 5789: 80-83. DOI: 10.1117/12.604118  0.609
2005 Zimmerman JD, Brown ER, Gossard AC. Tunable all epitaxial semimetal-semiconductor Schottky diode system: ErAs on InAlGaAs Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 23: 1929-1935. DOI: 10.1116/1.2013312  0.649
2005 Kadow C, Gossard AC, Rodwell MJW. Regrown-emitter InP heterojunction bisucpolar transistors Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 23: 1140-1143. DOI: 10.1116/1.1885014  0.654
2005 Kadow C, Dahlström M, Bae JU, Lin HK, Gossard AC, Rodwell MJW, Brar B, Sullivan GJ, Nagy G, Bergman JI. n+-InAs-InAlAs recess gate technology for InAs-channel millimeter-wave HFETs Ieee Transactions On Electron Devices. 52: 151-158. DOI: 10.1109/Ted.2004.842534  0.643
2005 Young AC, Zimmerman JD, Brown ER, Gossard AC. Semimetal-semiconductor junctions for low noise zero-bias rectifiers Ieee Mtt-S International Microwave Symposium Digest. 2005: 447-450. DOI: 10.1109/MWSYM.2005.1516625  0.576
2005 Myers RC, Poggio M, Stern NP, Gossard AC, Awschalom DD. Erratum: Antiferromagnetics−dExchange Coupling in GaMnAs [Phys. Rev. Lett.95, 017204 (2005)] Physical Review Letters. 95. DOI: 10.1103/Physrevlett.95.229902  0.618
2005 Poggio M, Myers RC, Stern NP, Gossard AC, Awschalom DD. Structural, electrical, and magneto-optical characterization of paramagnetic GaMnAs quantum wells Physical Review B - Condensed Matter and Materials Physics. 72. DOI: 10.1103/Physrevb.72.235313  0.722
2005 Granger G, Kastner MA, Radu I, Hanson MP, Gossard AC. Two-stage Kondo effect in a four-electron artificial atom Physical Review B - Condensed Matter and Materials Physics. 72. DOI: 10.1103/Physrevb.72.165309  0.588
2005 Petta JR, Johnson AC, Yacoby A, Marcus CM, Hanson MP, Gossard AC. Pulsed-gate measurements of the singlet-triplet relaxation time in a two-electron double quantum dot Physical Review B - Condensed Matter and Materials Physics. 72. DOI: 10.1103/Physrevb.72.161301  0.64
2005 Schleser R, Ruh E, Ihn T, Ensslin K, Driscoll DC, Gossard AC. Finite-bias charge detection in a quantum dot Physical Review B. 72: 35312. DOI: 10.1103/Physrevb.72.035312  0.398
2005 Russell KJ, Appelbaum I, Narayanamurti V, Hanson MP, Gossard AC. Transverse momentum nonconservation at the ErAs/GaAs interface Physical Review B - Condensed Matter and Materials Physics. 71. DOI: 10.1103/Physrevb.71.121311  0.554
2005 Johnson AC, Marcus CM, Hanson MP, Gossard AC. Charge sensing of excited states in an isolated double quantum dot Physical Review B - Condensed Matter and Materials Physics. 71. DOI: 10.1103/Physrevb.71.115333  0.63
2005 Dorn A, Bieri E, Ihn T, Ensslin K, Driscoll DD, Gossard AC. Interplay between the periodic potential modulation and random background scatterers in an antidot lattice Physical Review B - Condensed Matter and Materials Physics. 71. DOI: 10.1103/Physrevb.71.035343  0.358
2005 Döhler GH, Renner F, Klar O, Eckardt M, Schwanhäußer A, Malzer S, Driscoll D, Hanson M, Gossard AC, Loata G, Löffler T, Roskos H. THz-photomixer based on quasi-ballistic transport Semiconductor Science and Technology. 20. DOI: 10.1088/0268-1242/20/7/007  0.565
2005 Young AC, Zimmerman JD, Brown ER, Gossard AC. Semimetal-semiconductor rectifiers for sensitive room-temperature microwave detectors Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2112201  0.627
2005 Zide JM, Klenov DO, Stemmer S, Gossard AC, Zeng G, Bowers JE, Vashaee D, Shakouri A. Thermoelectric power factor in semiconductors with buried epitaxial semimetallic nanoparticles Applied Physics Letters. 87. DOI: 10.1063/1.2043241  0.758
2005 Kato YK, Myers RC, Gossard AC, Awschalom DD. Electrical initialization and manipulation of electron spins in an L-shaped strained n-InGaAs channel Applied Physics Letters. 87. DOI: 10.1063/1.1994930  0.667
2005 Hanson MP, Driscoll DC, Brown ER, Gossard AC. Strong sub-bandgap absorption in GaSb/ErSb nanocomposites attributed to plasma resonances of semimetallic ErSb nanoparticles Aip Conference Proceedings. 772: 845-846. DOI: 10.1063/1.1994370  0.558
2005 Klenov DO, Zide JM, Zimmerman JD, Gossard AC, Stemmer S. Interface atomic structure of epitaxial ErAs layers on (001)In 0.53Ga 0.47As and GaAs Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1947910  0.631
2005 Prasankumar RP, Scopatz A, Hilton DJ, Taylor AJ, Averitt RD, Zide JM, Gossard AC. Carrier dynamics in self-assembled ErAs nanoislands embedded in GaAs measured by optical-pump terahertz-probe spectroscopy Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1923174  0.36
2005 Kato YK, Myers RC, Gossard AC, Awschalom DD. Electron spin interferometry using a semiconductor ring structure Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1906301  0.679
2005 Trumm S, Betz M, Sotier F, Leitenstorfer A, Schwanhäußer A, Eckardt M, Malzer S, Hanson M, Driscoll D, Gossard AC, Döhler GH. Femtosecond spectroscopy of unipolar nanometer-scale high-field transport of holes in Al0.08Ga0.92As Applied Physics Letters. 86: 142105. DOI: 10.1063/1.1898442  0.627
2005 Klenov DO, Driscoll DC, Gossard AC, Stemmer S. Scanning transmission electron microscopy of ErAs nanoparticles embedded in epitaxial in 0.53Ga 0.47as layers Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1885172  0.317
2005 Appelbaum I, Yi W, Russell KJ, Narayanamurti V, Hanson MP, Gossard AC. Vertically integrated optics for ballistic electron emission luminescence microscopy Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1861961  0.595
2005 Driscoll DC, Hanson MP, Gossard AC, Brown ER. Ultrafast photoresponse at 1.55 μm in InGaAs with embedded semimetallic ErAs nanoparticles Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1852092  0.607
2005 Holleitner AW, Knotz H, Myers RC, Gossard AC, Awschalom DD. Manipulating a domain wall in (Ga,Mn)As Journal of Applied Physics. 97. DOI: 10.1063/1.1849055  0.661
2005 Lin HK, Kadow C, Bae JU, Rodwell MJW, Gossard AC, Brar B, Sullivan G, Nagy G, Bergman J. Design and characteristics of strained InAs/InAlAs composite-channel heterostructure field-effect transistors Journal of Applied Physics. 97. DOI: 10.1063/1.1831545  0.644
2005 Driscoll DC, Hanson MP, Gossard AC. Carrier compensation in semiconductors with buried metallic nanoparticles Journal of Applied Physics. 97. DOI: 10.1063/1.1808473  0.623
2005 Klenov DO, Driscoll DC, Zimmerman JD, Zide JD, Gossard AC, Stemmer S. Characterization of Epitaxial Semimetallic ErAs Particles in an In0.53Ga0.47As Matrix by High-Angle Annular Dark-Field Imaging Microscopy and Microanalysis. 11. DOI: 10.1017/S1431927605503805  0.605
2005 Vidan A, Westervelt RM, Stopa M, Hanson M, Gossard AC. Charging and spin effects in triple dot artificial molecules Journal of Superconductivity and Novel Magnetism. 18: 223-227. DOI: 10.1007/S10948-005-3373-8  0.661
2005 Brown ER, Bjarnason JE, Wilkinson TLJ, Driscoll DC, Hanson M, Gossard AC. Bright MM-wave and THz luminescence by down-conversion of near-IR amplified-spontaneous-emission International Journal of Infrared and Millimeter Waves. 26: 1691-1702. DOI: 10.1007/S10762-005-0290-7  0.571
2005 Renner F, Eckardt M, Schwanhäußer A, Klar O, Malzer S, Döhler GH, Loata G, Löffler T, Roskos H, Hanson M, Driscoll D, Gossard AC. THz-emitter based on ballistic transport in nano-pin diodes Physica Status Solidi (a). 202: 965-969. DOI: 10.1002/Pssa.200460706  0.597
2004 Zumbühl DM, Marcus CM, Hanson MP, Gossard AC. Cotunneling spectroscopy in few-electron quantum dots. Physical Review Letters. 93: 256801. PMID 15697924 DOI: 10.1103/Physrevlett.93.256801  0.621
2004 Kato YK, Myers RC, Gossard AC, Awschalom DD. Observation of the spin Hall effect in semiconductors. Science (New York, N.Y.). 306: 1910-3. PMID 15539563 DOI: 10.1126/Science.1105514  0.67
2004 Petta JR, Johnson AC, Marcus CM, Hanson MP, Gossard AC. Manipulation of a single charge in a double quantum dot. Physical Review Letters. 93: 186802. PMID 15525191 DOI: 10.1103/Physrevlett.93.186802  0.588
2004 Kato YK, Myers RC, Gossard AC, Awschalom DD. Current-induced spin polarization in strained semiconductors. Physical Review Letters. 93: 176601. PMID 15525098 DOI: 10.1103/Physrevlett.93.176601  0.674
2004 Johnson AC, Marcus CM, Hanson MP, Gossard AC. Coulomb-modified Fano resonance in a one-lead quantum dot. Physical Review Letters. 93: 106803. PMID 15447436 DOI: 10.1103/Physrevlett.93.106803  0.589
2004 Stephens J, Berezovsky J, McGuire JP, Sham LJ, Gossard AC, Awschalom DD. Spin accumulation in forward-biased MnAs/GaAs Schottky diodes. Physical Review Letters. 93: 097602. PMID 15447140 DOI: 10.1103/Physrevlett.93.097602  0.536
2004 DiCarlo L, Lynch HJ, Johnson AC, Childress LI, Crockett K, Marcus CM, Hanson MP, Gossard AC. Differential charge sensing and charge delocalization in a tunable double quantum dot. Physical Review Letters. 92: 226801. PMID 15245249 DOI: 10.1103/Physrevlett.92.226801  0.567
2004 Craig NJ, Taylor JM, Lester EA, Marcus CM, Hanson MP, Gossard AC. Tunable nonlocal spin control in a coupled-quantum dot system. Science (New York, N.Y.). 304: 565-7. PMID 15044752 DOI: 10.1126/Science.1095452  0.621
2004 Kato Y, Myers RC, Gossard AC, Awschalom DD. Coherent spin manipulation without magnetic fields in strained semiconductors. Nature. 427: 50-3. PMID 14702080 DOI: 10.1038/Nature02202  0.688
2004 Yi W, Appelbaum I, Russell KJ, Narayanamurti V, Hanson MP, Gossard AC. Ballistic Electron Emission Luminescence of InAs Quantum Dots Embedded in a GaAs/Al x Ga 1− x As Heterostructure Mrs Proceedings. 838. DOI: 10.1557/Proc-838-O11.2  0.675
2004 Leturcq R, Graf D, Ihn T, Ensslin K, Driscoll DD, Gossard AC. Multi-terminal transport through a quantum dot in the Coulomb-blockade regime Europhysics Letters. 67: 439-445. DOI: 10.1209/Epl/I2004-10084-X  0.419
2004 Jho YD, Wang X, Kyrychenko FV, Reitze DH, Stanton CJ, Kono J, Wei X, Crooker SA, Kadow C, Gossard AC. Interband magneto-spectroscopy of a high-density two-dimensional electron gas in a strong in-plane magnetic field International Journal of Modern Physics B. 18: 3831-3834. DOI: 10.1142/S0217979204027542  0.733
2004 Deviatov EV, Würtz A, Lorke A, Melnikov MY, Dolgopolov VT, Wixforth A, Campman KL, Gossard AC. Manifestation of the bulk phase transition in the edge energy spectrum in a two-dimensional bilayer electron system Jetp Letters. 79: 171-176. DOI: 10.1134/1.1738717  0.363
2004 Lai CW, Zoch J, Gossard AC, Chemla DS. Phase Diagram of Degenerate Exciton Systems Science. 303: 503-506. DOI: 10.1126/Science.1092691  0.36
2004 Hacker JB, Bergman J, Nagy G, Sullivan G, Kadow C, Lin HK, Gossard AC, Rodwell M, Brar B. An ultra-low power InAs/AlSb HEMT Ka-band low-noise amplifier Ieee Microwave and Wireless Components Letters. 14: 156-158. DOI: 10.1109/Lmwc.2004.827132  0.736
2004 Griffith Z, Kim YM, Dahlström M, Gossard AC, Rodwell MJW. InGaAs-InP metamorphic DHBTs grown on GaAs with lattice-matched device performance and fτ, fmax > 268 GHz Ieee Electron Device Letters. 25: 675-677. DOI: 10.1109/Led.2004.835160  0.347
2004 Wei Y, Scott DW, Dong Y, Gossard AC, Rodwell MJ. A 160-GHz fT and 140-GHz fMAX submicrometer InP DHBT in MBE regrown-emitter technology Ieee Electron Device Letters. 25: 232-234. DOI: 10.1109/Led.2004.826521  0.324
2004 Kim YM, Griffith Z, Rodwell MJW, Gossard AC. High bandwidth and low-leakage current InP-In0.53Ga0.47As-InP DBHTs on GaAs substrates Ieee Electron Device Letters. 25: 170-172. DOI: 10.1109/Led.2004.825198  0.335
2004 Kičin S, Pioda A, Ihn T, Ensslin K, Driscoll DC, Gossard AC. Local backscattering in the quantum Hall regime Physical Review B. 70: 205302. DOI: 10.1103/Physrevb.70.205302  0.384
2004 Sih V, Lau WH, Myers RC, Gossard AC, Flatté ME, Awschalom DD. Control of electron-spin coherence using Landau level quantization in a two-dimensional electron gas Physical Review B - Condensed Matter and Materials Physics. 70: 1-4. DOI: 10.1103/Physrevb.70.161313  0.698
2004 Allen W, Gwinn EG, Kreutz TC, Gossard AC. Anomalous Hall effect in ferromagnetic semiconductors with hopping transport Physical Review B - Condensed Matter and Materials Physics. 70: 125320-1-125320-5. DOI: 10.1103/Physrevb.70.125320  0.324
2004 Vieira GS, Villas-Bôas JM, Guimarães PSS, Studart N, Kono J, Allen SJ, Campman KL, Gossard AC. Magnetically tuned resonant photon-assisted tunneling Physical Review B. 70. DOI: 10.1103/Physrevb.70.035316  0.513
2004 Myers RC, Gossard AC, Awschalom DD. Tunable spin polarization in III-V quantum wells with a ferromagnetic barrier Physical Review B - Condensed Matter and Materials Physics. 69: 161305-1-161305-4. DOI: 10.1103/Physrevb.69.161305  0.712
2004 Kreutz TC, Allen WD, Gwinn EG, Awschalom DD, Gossard AC. Structure-controlled magnetic anisotropy in ferromagnetic semiconductor superlattices Physical Review B - Condensed Matter and Materials Physics. 69: 813021-813024. DOI: 10.1103/Physrevb.69.081302  0.494
2004 Betz M, Trumm S, Sotier F, Leitenstorfer A, Schwanhäußer A, Eckardt M, Schmidt O, Malzer S, Döhler GH, Hanson M, Driscoll D, Gossard AC. Ultrafast high-field transport in GaAs: direct observation of quasi-ballistic electron motion, impact ionization and avalanche multiplication Semiconductor Science and Technology. 19: S167-S169. DOI: 10.1088/0268-1242/19/4/058  0.631
2004 Krauß J, Kotthaus JP, Wixforth A, Hanson M, Driscoll DC, Gossard AC, Schuh D, Bichler M. Capture and release of photonic images in a quantum well Applied Physics Letters. 85: 5830-5832. DOI: 10.1063/1.1830676  0.604
2004 Holleitner AW, Knotz H, Myers RC, Gossard AC, Awschalom DD. Pinning a domain wall in (Ga, Mn)As with focused ion beam lithography Applied Physics Letters. 85: 5622-5624. DOI: 10.1063/1.1829797  0.654
2004 Russell KJ, Appelbaum I, Yi W, Monsma DJ, Capasso F, Marcus CM, Narayanamurti V, Hanson MP, Gossard AC. Avalanche spin-valve transistor Applied Physics Letters. 85: 4502-4504. DOI: 10.1063/1.1818339  0.53
2004 Bjarnason JE, Chan TLJ, Lee AWM, Brown ER, Driscoll DC, Hanson M, Gossard AC, Muller RE. ErAs:GaAs photomixer with two-decade tunability and 12 μW peak output power Applied Physics Letters. 85: 3983-3985. DOI: 10.1063/1.1813635  0.607
2004 Sigrist M, Fuhrer A, Ihn T, Ensslin K, Driscoll DC, Gossard AC. Multiple layer local oxidation for fabricating semiconductor nanostructures Applied Physics Letters. 85: 3558-3560. DOI: 10.1063/1.1809273  0.404
2004 Brown ER, Bjarnason J, Chan TLJ, Driscoll DC, Hanson M, Gossard AC. Room temperature, THz photomixing sweep oscillator and its application to spectroscopic transmission through organic materials Review of Scientific Instruments. 75: 5333-5342. DOI: 10.1063/1.1808912  0.322
2004 Vidan A, Westervelt RM, Stopa M, Hanson M, Gossard AC. Triple quantum dot charging rectifier Applied Physics Letters. 85: 3602-3604. DOI: 10.1063/1.1807030  0.667
2004 Hanson MP, Driscoll DC, Zimmerman JD, Gossard AC, Brown ER. Subplcosecond photocarrier lifetimes in GaSb/ErSb nanoparticle superlattices at 1.55 μm Applied Physics Letters. 85: 3110-3112. DOI: 10.1063/1.1805711  0.721
2004 Appelbaum I, Russell KJ, Shalish I, Narayanamurti V, Hanson MP, Gossard AC. Ballistic hole emission luminescence Applied Physics Letters. 85: 2265-2267. DOI: 10.1063/1.1793347  0.558
2004 Yi W, Appelbaum I, Russell KJ, Narayanamurti V, Hanson MP, Gossard AC. Ballistic electron emission luminescence spectroscopy of an InAs quantum dot heterostructure Applied Physics Letters. 85: 1990-1992. DOI: 10.1063/1.1790595  0.632
2004 Schleser R, Ruh E, Ihn T, Ensslin K, Driscoll DC, Gossard AC. Time-resolved detection of individual electrons in a quantum dot Applied Physics Letters. 85: 2005-2007. DOI: 10.1063/1.1784875  0.42
2004 Schuller JA, Johnston-Halperin E, Gallinat CS, Knotz H, Gossard AC, Awschalom DD. Structural engineering of ferromagnetism in III-V digital ferromagnetic heterostructures Journal of Applied Physics. 95: 4922-4927. DOI: 10.1063/1.1667594  0.705
2004 Carter SG, Ciulin V, Sherwin MS, Hanson M, Huntington A, Coldren LA, Gossard AC. Terahertz electro-optic wavelength conversion in GaAs quantum wells: Improved efficiency and room-temperature operation Applied Physics Letters. 84: 840-842. DOI: 10.1063/1.1645662  0.401
2004 Appelbaum I, Russell KJ, Kozhevnikov M, Narayanamurti V, Hanson MP, Gossard AC. Room-temperature ballistic electron emission luminescence spectroscopy with a scanning tunneling microscope Applied Physics Letters. 84: 547-549. DOI: 10.1063/1.1644329  0.591
2004 Lin HK, Kadow C, Dahlström M, Bae JU, Rodwell MJW, Gossard AC, Brar B, Sullivan G, Nagy G, Bergman J. InAs/InAsP composite channels for antimonide-based field-effect transistors Applied Physics Letters. 84: 437-439. DOI: 10.1063/1.1642275  0.696
2004 Hanson MP, Driscoll DC, Kadow C, Gossard AC. Metal/semiconductor superlattices containing semimetallic ErSb nanoparticles in GaSb Applied Physics Letters. 84: 221-223. DOI: 10.1063/1.1639932  0.715
2004 Wei Y, Appelbaum I, Russell KJ, Narayanamurti V, Hanson MP, Gossard AC. Ballistic electron emission luminescence of InAs quantum dots embedded in a GaAs/AlxGa1-xAs heterostructure Materials Research Society Symposium Proceedings. 838: 170-175. DOI: 10.1063/1.1584524  0.602
2004 Westervelt RM, Topinka MA, LeRoy BJ, Bleszynski AC, Aidala K, Shaw SEJ, Heller EJ, Maranowski KD, Gossard AC. Imaging electron waves Physica E: Low-Dimensional Systems and Nanostructures. 24: 63-69. DOI: 10.1016/J.Physe.2004.04.025  0.642
2004 Dorn A, Bieri E, Ihn T, Ensslin K, Driscoll D, Gossard AC. AFM-defined antidot lattices with top- and back-gate tunability Physica E-Low-Dimensional Systems & Nanostructures. 22: 749-752. DOI: 10.1016/J.Physe.2003.12.115  0.413
2004 Kyrychenko FV, Jho YD, Kono J, Crooker SA, Sanders GD, Reitze DH, Stanton CJ, Wei X, Kadow C, Gossard AC. Interband magnetoabsorption study of the shift of the Fermi energy of a 2DEG with an in-plane magnetic field Physica E: Low-Dimensional Systems and Nanostructures. 22: 624-627. DOI: 10.1016/J.Physe.2003.12.085  0.712
2004 Kičin S, Pioda A, Ihn T, Ensslin K, Driscoll DD, Gossard AC. Scanning gate measurements in the quantum Hall regime at 300 mK Physica E: Low-Dimensional Systems and Nanostructures. 21: 708-711. DOI: 10.1016/J.Physe.2003.11.103  0.437
2004 Dorn A, Peter M, Kicin S, Ihn T, Ensslin K, Driscoll D, Gossard AC. Charging effects of ErAs islands embedded in AlGaAs heterostructures Physica E-Low-Dimensional Systems & Nanostructures. 21: 426-429. DOI: 10.1016/J.Physe.2003.11.061  0.362
2004 Scott DW, Kadow C, Dong Y, Wei Y, Gossard AC, Rodwell MJW. Low-resistance n-type polycrystalline InAs grown by molecular beam epitaxy Journal of Crystal Growth. 267: 35-41. DOI: 10.1016/J.Jcrysgro.2004.03.049  0.648
2003 Brown ER, Bacher A, Driscoll D, Hanson M, Kadow C, Gossard AC. Evidence for a strong surface-plasmon resonance on ErAs nanoparticles in GaAs. Physical Review Letters. 90: 077403. PMID 12633271 DOI: 10.1103/Physrevlett.90.077403  0.733
2003 Miller JB, Zumbühl DM, Marcus CM, Lyanda-Geller YB, Goldhaber-Gordon D, Campman K, Gossard AC. Gate-controlled spin-orbit quantum interference effects in lateral transport. Physical Review Letters. 90: 076807. PMID 12633263 DOI: 10.1103/Physrevlett.90.076807  0.341
2003 Griebel M, Smet JH, Driscoll DC, Kuhl J, Diez CA, Freytag N, Kadow C, Gossard AC, Von Klitzing K. Tunable subpicosecond optoelectronic transduction in superlattices of self-assembled ErAs nanoislands. Nature Materials. 2: 122-6. PMID 12612698 DOI: 10.1038/Nmat819  0.654
2003 Kato Y, Myers RC, Driscoll DC, Gossard AC, Levy J, Awschalom DD. Gigahertz electron spin manipulation using voltage-controlled g-tensor modulation. Science (New York, N.Y.). 299: 1201-4. PMID 12543982 DOI: 10.1126/Science.1080880  0.691
2003 Kim Y, Dahlstrom M, Rodwell M, Gossard A. Thermal properties of metamorphic buffer materials for growth of inp double heterojunction bipolar transistors on gaas substrates Ieee Transactions On Electron Devices. 50: 1411-1413. DOI: 10.1109/Ted.2003.813225  0.582
2003 Johnston-Halperin E, Schuller JA, Gallinat CS, Kreutz TC, Myers RC, Kawakami RK, Knotz H, Gossard AC, Awschalom DD. Independent electronic and magnetic doping in (Ga,Mn)As based digital ferromagnetic heterostructures Physical Review B - Condensed Matter and Materials Physics. 68: 1653281-1653289. DOI: 10.1103/Physrevb.68.165328  0.8
2003 Druist DP, Gwinn EG, Maranowski KD, Gossard AC. Anisotropic magnetic response of a chiral conducting film Physical Review B - Condensed Matter and Materials Physics. 68: 753051-753054. DOI: 10.1103/Physrevb.68.075305  0.641
2003 Epstein RJ, Stephens J, Hanson M, Chye Y, Gossard AC, Petroff PM, Awschalom DD. Voltage control of nuclear spin in ferromagnetic Schottky diodes Physical Review B - Condensed Matter and Materials Physics. 68: 413051-413054. DOI: 10.1103/Physrevb.68.041305  0.689
2003 Jena D, Heikman S, Speck JS, Gossard A, Mishra UK, Link A, Ambacher O. Magnetotransport properties of a polarization-doped three-dimensional electron slab in graded AlGaN Physical Review B - Condensed Matter and Materials Physics. 67: 1533061-1533064. DOI: 10.1103/Physrevb.67.153306  0.378
2003 Appelbaum I, Russell KJ, Monsma DJ, Narayanamurti V, Marcus CM, Hanson MP, Gossard AC. Luminescent spin-valve transistor Applied Physics Letters. 83: 4571-4573. DOI: 10.1063/1.1630838  0.538
2003 Pohl P, Renner FH, Eckardt M, Schwanhäußer A, Friedrich A, Yüksekdag Ö, Malzer S, Döhler GH, Kiesel P, Driscoll D, Hanson M, Gossard AC. Enhanced recombination tunneling in GaAs pn junctions containing low-temperature-grown-GaAs and ErAs layers Applied Physics Letters. 83: 4035-4037. DOI: 10.1063/1.1625108  0.615
2003 Sukhotin M, Brown ER, Driscoll D, Hanson M, Gossard AC. Picosecond photocarrier-lifetime in ErAs:InGaAs at 1.55 μm Applied Physics Letters. 83: 3921-3923. DOI: 10.1063/1.1622121  0.58
2003 Harris JGE, Knobel R, Maranowski KD, Gossard AC, Samarth N, Awschaloma DD. Damping of micromechanical structures by paramagnetic relaxation Applied Physics Letters. 82: 3532-3534. DOI: 10.1063/1.1577385  0.581
2003 Griebel M, Smet JH, Kuhl J, Von Klitzing K, Driscoll DC, Kadow C, Gossard AC. Picosecond sampling with fiber-illuminated ErAs:GaAs photoconductive switches in a strong magnetic field and a cryogenic environment Applied Physics Letters. 82: 3179-3181. DOI: 10.1063/1.1573367  0.612
2003 Russella KJ, Appelbaum I, Temkin H, Perry CH, Narayanamurti V, Hanson MP, Gossard AC. Room-temperature electro-optic up-conversion via internal photoemission Applied Physics Letters. 82: 2960-2962. DOI: 10.1063/1.1571981  0.548
2003 Sukhotin M, Brown ER, Gossard AC, Driscoll D, Hanson M, Maker P, Muller R. Photomixing and photoconductor measurements on ErAs/InGaAs at 1.55 μm Applied Physics Letters. 82: 3116-3118. DOI: 10.1063/1.1567459  0.612
2003 Dorn A, Peter M, Kicin S, Ihn T, Ensslin K, Driscoll D, Gossard AC. Charge tunable ErAs islands for backgate isolation in AlGaAs heterostructures Applied Physics Letters. 82: 2631-2633. DOI: 10.1063/1.1566793  0.359
2003 Ku KC, Potashnik SJ, Wang RF, Chun SH, Schiffer P, Samarth N, Seong MJ, Mascarenhas A, Johnston-Halperin E, Myers RC, Gossard AC, Awschalom DD. Highly enhanced Curie temperature in low-temperature annealed [Ga,Mn]As epilayers Applied Physics Letters. 82: 2302-2304. DOI: 10.1063/1.1564285  0.659
2003 Eckardt M, Schwanhäußer A, Renner F, Robledo L, Friedrich A, Pohl P, Kiesel P, Malzer S, Döhler G, Driscoll D, Hanson M, Gossard A. Novel concept for efficient THz-emitters based on quasi-ballistic transport in an asymmetric superlattice Physica E: Low-Dimensional Systems and Nanostructures. 17: 629-630. DOI: 10.1016/S1386-9477(02)00912-8  0.6
2003 Chan IH, Fallahi P, Westervelt RM, Maranowski KD, Gossard AC. Capacitively coupled quantum dots as a single-electron switch Physica E: Low-Dimensional Systems and Nanostructures. 17: 584-588. DOI: 10.1016/S1386-9477(02)00876-7  0.682
2003 Salis G, Kato Y, Ensslin K, Driscoll DC, Gossard AC, Awschalom DD. Electrical control of spin precession in semiconductor quantum wells Physica E: Low-Dimensional Systems and Nanostructures. 16: 99-103. DOI: 10.1016/S1386-9477(02)00595-7  0.582
2003 LeRoy BJ, Bleszynski AC, Topinka MA, Westervelt RM, Shaw SEJ, Heller EJ, Maranowski KD, Gossard AC. Imaging coherent electron wave flow in a two-dimensional electron gas Physica E: Low-Dimensional Systems and Nanostructures. 18: 163-164. DOI: 10.1016/S1386-9477(01)00375-7  0.631
2003 Westervelt RM, Topinka MA, LeRoy BJ, Bleszynski AC, Shaw SEJ, Heller EJ, Maranowski KD, Gossard AC. Imaging coherent electron flow in a two-dimensional electron gas Physica E: Low-Dimensional Systems and Nanostructures. 18: 138-140. DOI: 10.1016/S0169-4332(02)01493-9  0.639
2003 Dong Y, Scott DW, Wei Y, Gossard AC, Rodwell MJ. Low-resistance p-type polycrystalline GaSb grown by molecular beam epitaxy Journal of Crystal Growth. 256: 223-229. DOI: 10.1016/S0022-0248(03)01346-0  0.576
2003 Driscoll DC, Hanson MP, Mueller E, Gossard AC. Growth and microstructure of semimetallic ErAs particles embedded in an In0.53Ga0.47As matrix Journal of Crystal Growth. 251: 243-247. DOI: 10.1016/S0022-0248(02)02511-3  0.585
2003 Kadow C, Lin HK, Dahlström M, Rodwell M, Gossard AC, Brar B, Sullivan G. Reduction of the unintentional background electron density in AlSb/InAs/AlSb quantum wells Journal of Crystal Growth. 251: 543-546. DOI: 10.1016/S0022-0248(02)02447-8  0.771
2002 Zumbühl DM, Miller JB, Marcus CM, Campman K, Gossard AC. Spin-orbit coupling, antilocalization, and parallel magnetic fields in quantum dots. Physical Review Letters. 89: 276803. PMID 12513231 DOI: 10.1103/Physrevlett.89.276803  0.392
2002 Butov LV, Gossard AC, Chemla DS. Macroscopically ordered state in an exciton system Nature. 418: 751-754. PMID 12181559 DOI: 10.1038/Nature00943  0.428
2002 Deviatov EV, Shashkin AA, Dolgopolov VT, Kutschera HJ, Wixforth A, Campman KL, Gossard AC. Shifting the quantum Hall plateau level in a double layer electron system Jetp Letters. 75: 34-36. DOI: 10.1134/1.1463112  0.418
2002 Griebel M, Smet JH, Kuhl J, Driscoll D, Kadow C, Von Klitzing K, Gossard AC. Diffusion-controlled picosecond carrier dynamics in ErAs:GaAs superlattices Proceedings of Spie - the International Society For Optical Engineering. 4643: 56-61. DOI: 10.1117/12.470436  0.638
2002 Kim YM, Dahlstrom M, Lee S, Rodwell AJW, Gossard AC. High-performance InP/In/sub 0.53/Ga/sub 0.47/As/InP double HBTs on GaAs substrates Ieee Electron Device Letters. 23: 297-299. DOI: 10.1109/Led.2002.1004214  0.304
2002 Lindemann S, Ihn T, Heinzel T, Zwerger W, Ensslin K, Maranowski K, Gossard AC. Stability of spin states in quantum dots Physical Review B. 66. DOI: 10.1103/Physrevb.66.195314  0.639
2002 Lindemann S, Bänninger M, Ihn T, Heinzel T, Ulloa SE, Ensslin K, Maranowski K, Gossard AC. Lateral superlattices on parabolic quantum wells Physical Review B. 66. DOI: 10.1103/Physrevb.66.165317  0.661
2002 Lindemann S, Ihn T, Bieri S, Heinzel T, Ensslin K, Hackenbroich G, Maranowski K, Gossard AC. Bouncing states in quantum dots Physical Review B. 66. DOI: 10.1103/Physrevb.66.161312  0.644
2002 Shtrichman I, Ron A, Gershoni D, Ehrenfreund E, Maranowski KD, Gossard AC. Temporal evolution of the excitonic distribution function inGaAs/Al0.33Ga0.67Assuperlattices Physical Review B. 65. DOI: 10.1103/Physrevb.65.153302  0.623
2002 LeRoy BJ, Topinka MA, Westervelt RM, Maranowski KD, Gossard AC. Imaging electron density in a two-dimensional electron gas Applied Physics Letters. 80: 4431-4433. DOI: 10.1063/1.1484548  0.634
2002 Chan IH, Westervelt RM, Maranowski KD, Gossard AC. Strongly capacitively coupled quantum dots Applied Physics Letters. 80: 1818-1820. DOI: 10.1063/1.1456552  0.678
2002 Kim Y, Urteaga M, Rodwell M, Gossard A. High speed, low leakage current InP∕In0.53Ga0.47As∕InP metamorphic double heterojunction bipolar transistors Electronics Letters. 38: 1288. DOI: 10.1049/El:20020871  0.564
2002 Lindemann S, Ihn T, Heinzel T, Ensslin K, Maranowski K, Gossard AC. From two-dimensional to three-dimensional quantum dots Physica E: Low-Dimensional Systems and Nanostructures. 13: 638-641. DOI: 10.1016/S1386-9477(02)00206-0  0.656
2002 Hanson MP, Driscoll DC, Muller E, Gossard AC. Microstructure and electronic characterization of InGaAs containing layers of self-assembled ErAs nanoparticles Physica E: Low-Dimensional Systems and Nanostructures. 13: 602-605. DOI: 10.1016/S1386-9477(02)00194-7  0.602
2002 Druist DP, Gwinn EG, Maranowski KD, Gossard AC. Tilted field effects in quantum Hall multilayers Physica E: Low-Dimensional Systems and Nanostructures. 12: 129-131. DOI: 10.1016/S1386-9477(01)00284-3  0.65
2002 Kawakami RK, Johnston-Halperin E, Chen LF, Hanson M, Guébels N, Stephens JM, Speck JS, Gossard AC, Awschalom DD. Growth and magnetic properties of (Ga,Mn) As as digital ferromagnetic heterostructures Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 88: 209-212. DOI: 10.1016/S0921-5107(01)00906-0  0.685
2002 Kim Y, Dahlstrǒm M, Lee S, Rodwell M, Gossard A. InP/In0.53Ga0.47As/InP double heterojunction bipolar transistors on GaAs substrates using InP metamorphic buffer layer Solid-State Electronics. 46: 1541-1544. DOI: 10.1016/S0038-1101(02)00102-8  0.524
2002 Kim YM, Rodwell MJW, Gossard AC. Thermal characteristics of InP, InAlAs, and AlGaAsSb metamorphic buffer layers used in In 0.52 Al 0.48 As/In 0.53 Ga 0.47 As heterojunction bipolar transistors grown on GaAs substrates Journal of Electronic Materials. 31: 196-199. DOI: 10.1007/S11664-002-0206-4  0.323
2001 Salis G, Kato Y, Ensslin K, Driscoll DC, Gossard AC, Awschalom DD. Electrical control of spin coherence in semiconductor nanostructures. Nature. 414: 619-22. PMID 11740554 DOI: 10.1038/414619A  0.571
2001 Williams JB, Sherwin MS, Maranowski KD, Gossard AC. Dissipation of intersubband plasmons in wide quantum wells. Physical Review Letters. 87: 037401. PMID 11461588 DOI: 10.1103/PhysRevLett.87.037401  0.614
2001 Kycia JB, Chen J, Therrien R, Kurdak C, Campman KL, Gossard AC, Clarke J. Effects of dissipation on a superconducting single electron transistor. Physical Review Letters. 87: 017002. PMID 11461486 DOI: 10.1103/Physrevlett.87.017002  0.38
2001 Butov LV, Ivanov AL, Imamoglu A, Littlewood PB, Shashkin AA, Dolgopolov VT, Campman KL, Gossard AC. Stimulated scattering of indirect excitons in coupled quantum wells: signature of a degenerate Bose-gas of excitons. Physical Review Letters. 86: 5608-11. PMID 11415313 DOI: 10.1103/Physrevlett.86.5608  0.399
2001 Harris JG, Knobel R, Maranowski KD, Gossard AC, Samarth N, Awschalom DD. Magnetization measurements of magnetic two-dimensional electron gases. Physical Review Letters. 86: 4644-7. PMID 11384304 DOI: 10.1103/Physrevlett.86.4644  0.69
2001 Topinka MA, LeRoy BJ, Westervelt RM, Shaw SE, Fleischmann R, Heller EJ, Maranowski KD, Gossard AC. Coherent branched flow in a two-dimensional electron gas. Nature. 410: 183-6. PMID 11242072 DOI: 10.1038/35065553  0.624
2001 Butov LV, Imamoglu A, Campman KL, Gossard AC. Coulomb Effects in Spatially Separated Electron and Hole Layers in Coupled Quantum Wells Journal of Experimental and Theoretical Physics. 92: 260-266. DOI: 10.1134/1.1354683  0.415
2001 Driscoll DC, Hanson M, Kadow C, Gossard AC. Transition to insulating behavior in the metal-semiconductor digital composite ErAs:InGaAs Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 19: 1631-1634. DOI: 10.1116/1.1388211  0.73
2001 Shtrichman I, Metzner C, Ehrenfreund E, Gershoni D, Maranowski KD, Gossard AC. Depolarization shift of the intersubband resonance in a quantum well with an electron-hole plasma Physical Review B. 65. DOI: 10.1103/Physrevb.65.035310  0.647
2001 Woodside MT, Vale C, McEuen PL, Kadow C, Maranowski KD, Gossard AC. Imaging interedge-state scattering centers in the quantum Hall regime Physical Review B - Condensed Matter and Materials Physics. 64: 413101-413104. DOI: 10.1103/Physrevb.64.041310  0.783
2001 Duncan DS, Topinka MA, Westervelt RM, Maranowski KD, Gossard AC. Aharonov-Bohm phase shift in an open electron resonator Physical Review B - Condensed Matter and Materials Physics. 64: 0333101-0333104. DOI: 10.1103/Physrevb.64.033310  0.639
2001 Duncan DS, Topinka MA, Westervelt RM, Maranowski KD, Gossard AC. Interaction of tunnel-coupled quantum dots in a magnetic field Physical Review B - Condensed Matter and Materials Physics. 63: 453111-453114. DOI: 10.1103/Physrevb.63.045311  0.658
2001 Chen LH, Topinka MA, LeRoy BJ, Westervelt RM, Maranowski KD, Gossard AC. Charge-imaging field-effect transistor Applied Physics Letters. 79: 1202-1204. DOI: 10.1063/1.1395516  0.638
2001 Driscoll DC, Hanson M, Kadow C, Gossard AC. Electronic structure and conduction in a metal-semiconductor digital composite: ErAs:InGaAs Applied Physics Letters. 78: 1703-1705. DOI: 10.1063/1.1355988  0.749
2001 Jena D, Smorchkova I, Gossard A, Mishra U. Electron Transport in III-V Nitride Two-Dimensional Electron Gases Physica Status Solidi (B). 228: 617-619. DOI: 10.1002/1521-3951(200111)228:2<617::Aid-Pssb617>3.0.Co;2-E  0.326
2000 Topinka MA, LeRoy BJ, Shaw SE, Heller EJ, Westervelt RM, Maranowski KD, Gossard AC. Imaging coherent electron flow from a quantum point contact Science (New York, N.Y.). 289: 2323-6. PMID 11009412 DOI: 10.1126/Science.289.5488.2323  0.621
2000 Deviatov EV, Khrapai VS, Shashkin AA, Dolgopolov VT, Hastreiter F, Wixforth A, Campman KL, Gossard AC. Opening an energy gap in an electron double layer system at the integer filling factor in a tilted magnetic field Jetp Letters. 71: 496-499. DOI: 10.1134/1.1307474  0.366
2000 Kadow C, Johnson JA, Kolstad K, Ibbetson JP, Gossard AC. Growth and microstructure of self-assembled ErAs islands in GaAs Journal of Vacuum Science & Technology B. 18: 2197-2203. DOI: 10.1116/1.1306299  0.328
2000 Butov LV, Mintsev AV, Lozovik YE, Campman KL, Gossard AC. From spatially indirect excitons to momentum-space indirect excitons by an in-plane magnetic field Physical Review B. 62: 1548-1551. DOI: 10.1103/Physrevb.62.1548  0.356
2000 Harris JGE, Awschalom DD, Maranowski KD, Gossard AC. Magnetization and dissipation measurements in the quantum Hall regime using an integrated micromechanical magnetometer Journal of Applied Physics. 87: 5102-5104. DOI: 10.1063/1.373262  0.71
2000 Kawakami RK, Johnston-Halperin E, Chen LF, Hanson M, Guébels N, Speck JS, Gossard AC, Awschalom DD. Erratum: “(Ga,Mn)As as a digital ferromagnetic heterostructure” [Appl. Phys. Lett. 77, 2379 (2000)] Applied Physics Letters. 77: 3665-3665. DOI: 10.1063/1.1331685  0.641
2000 Lu W, Rimberg AJ, Maranowski KD, Gossard AC. Single-electron transistor strongly coupled to an electrostatically defined quantum dot Applied Physics Letters. 77: 2746-2748. DOI: 10.1063/1.1320455  0.452
2000 Duncan DS, Goldhaber-Gordon D, Westervelt RM, Maranowski KD, Gossard AC. Coulomb-blockade spectroscopy on a small quantum dot in a parallel magnetic field Applied Physics Letters. 77: 2183-2185. DOI: 10.1063/1.1313812  0.669
2000 Jena D, Gossard AC, Mishra UK. Dipole scattering in polarization induced III–V nitride two-dimensional electron gases Journal of Applied Physics. 88: 4734. DOI: 10.1063/1.1311832  0.353
2000 Kadow C, Jackson AW, Gossard AC, Matsuura S, Blake GA. Self-assembled ErAs islands in GaAs for optical-heterodyne THz generation Applied Physics Letters. 76: 3510-3512. DOI: 10.1063/1.126690  0.651
2000 Shtrichman I, Mizrahi U, Gershoni D, Ehrenfreund E, Maranowski KD, Gossard AC. Dynamics of carriers in resonantly excited quantum-well lasers studied by intersubband absorption Applied Physics Letters. 76: 2988-2990. DOI: 10.1063/1.126554  0.392
2000 Williams JB, Sherwin MS, Maranowski KD, Kadow C, Gossard AC. Linewidth and dephasing of THz-frequency collective intersubband transitions in a GaAs/AlGaAs quantum well Physica E: Low-Dimensional Systems and Nanostructures. 7: 204-207. DOI: 10.1016/S1386-9477(99)00320-3  0.78
2000 Kadow C, Jackson AW, Gossard AC, Bowers JE, Matsuura S, Blake GA. Self-assembled ErAs islands in GaAs for THz applications Physica E: Low-Dimensional Systems and Nanostructures. 7: 97-100. DOI: 10.1016/S1386-9477(99)00314-8  0.608
2000 Shtrichman I, Mizrahi U, Gershoni D, Ehrenfreund E, Maranowski KD, Gossard AC. Time-resolved intersubband optical transitions in resonantly optically pumped semiconductor lasers Physica E: Low-Dimensional Systems and Nanostructures. 7: 237-240. DOI: 10.1016/S1386-9477(99)00299-4  0.655
2000 Kurdak C, Therrien R, Kycia JB, Clarke J, Campman KL, Gossard AC. Observation of large conductance oscillations in a superconducting single-electron transistor coupled to a two-dimensional electron gas Physica E: Low-Dimensional Systems and Nanostructures. 6: 852-855. DOI: 10.1016/S1386-9477(99)00232-5  0.406
2000 Butov LV, Imamoglu A, Shashkin AA, Dolgopolov VT, Mintsev AV, Feklisov SG, Campman KL, Gossard AC. Magneto optics of the spatially separated electron and hole layers in GaAs/AlGaAs coupled quantum wells Physica E: Low-Dimensional Systems and Nanostructures. 6: 655-659. DOI: 10.1016/S1386-9477(99)00145-9  0.441
2000 Streibl M, Wixforth A, Kotthaus JP, Kadow C, Gossard AC. Imaging of carrier dynamics in semiconductor heterostructures by surface acoustic waves Physica E: Low-Dimensional Systems and Nanostructures. 6: 255-259. DOI: 10.1016/S1386-9477(99)00137-X  0.654
2000 Druist DP, Gwinn EG, Maranowski KD, Gossard AC. Magnetoresistance of chiral surface states in the integer quantum Hall effect Physica E: Low-Dimensional Systems and Nanostructures. 6: 619-622. DOI: 10.1016/S1386-9477(99)00130-7  0.644
2000 Woodside MT, Vale C, McCormick KL, McEuen PL, Kadow C, Maranowski KD, Gossard AC. Scanned potential microscopy of edge states in a quantum Hall liquid Physica E: Low-Dimensional Systems and Nanostructures. 6: 238-241. DOI: 10.1016/S1386-9477(99)00115-0  0.763
2000 Fromer N, Schüller C, Chemla DS, Maranowski K, Gossard AC. Dephasing in the presence of a two-dimensional electron gas at high magnetic fields Physica E: Low-Dimensional Systems and Nanostructures. 6: 210-213. DOI: 10.1016/S1386-9477(99)00083-1  0.654
2000 Denk P, Hartung M, Wixforth A, Campmann KL, Gossard AC. Depolarization shift in coupled quantum wells with tunable level spectrum Physica E-Low-Dimensional Systems & Nanostructures. 8: 269-274. DOI: 10.1016/S1386-9477(00)00151-X  0.406
2000 Unterrainer K, Kersting R, Bratschitsch R, Strasser G, Heyman JN, Maranowski KD, Gossard AC. Few-cycle THz spectroscopy of nanostructures Physica E: Low-Dimensional Systems and Nanostructures. 7: 693-697. DOI: 10.1016/S1386-9477(00)00039-4  0.673
2000 Hu J, Deng T, Beck RG, Westervelt RM, Maranowski KD, Gossard AC, Whitesides GM. Fabrication of GaAs/AlGaAs high electron mobility transistors with 250 nm gates using conformal phase shift lithography Sensors and Actuators, a: Physical. 86: 122-126. DOI: 10.1016/S0924-4247(00)00435-0  0.62
2000 Butov LV, Imamoglu A, Shashkin AA, Dolgopolov VT, Mintsev AV, Feklisov SG, Campman KL, Gossard AC. Nonlinear photoluminescence kinetics of indirect excitons in coupled quantum wells Physica Status Solidi (a) Applied Research. 178: 83-87. DOI: 10.1002/1521-396X(200003)178:1<83::Aid-Pssa83>3.0.Co;2-8  0.365
1999 Butov LV, Shashkin AA, Dolgopolov VT, Campman KL, Gossard AC. Magneto-optics of the spatially separated electron and hole layers inGaAs/AlxGa1−xAscoupled quantum wells Physical Review B. 60: 8753-8758. DOI: 10.1103/Physrevb.60.8753  0.415
1999 Salis G, Heinzel T, Ensslin K, Homan OJ, Bächtold W, Maranowski K, Gossard AC. Mode spectroscopy and level coupling in ballistic electron waveguides Physical Review B. 60: 7756-7759. DOI: 10.1103/Physrevb.60.7756  0.624
1999 Salis G, Wirth P, Heinzel T, Ihn T, Ensslin K, Maranowski K, Gossard AC. Variation of elastic scattering across a quantum well Physical Review B. 59. DOI: 10.1103/Physrevb.59.R5304  0.624
1999 Butov LV, Imamoglu A, Mintsev AV, Campman KL, Gossard AC. Photoluminescence kinetics of indirect excitons inGaAs/AlxGa1−xAscoupled quantum wells Physical Review B. 59: 1625-1628. DOI: 10.1103/Physrevb.59.1625  0.424
1999 Dolgopolov VT, Shashkin AA, Deviatov EV, Hastreiter F, Hartung M, Wixforth A, Campman KL, Gossard AC. Electron subbands in a double quantum well in a quantizing magnetic field Physical Review B. 59: 13235-13241. DOI: 10.1103/Physrevb.59.13235  0.435
1999 Livermore C, Duncan DS, Westervelt RM, Maranowski KD, Gossard AC. Conductance oscillations in tunnel-coupled quantum dots in the quantum Hall regime Physical Review B - Condensed Matter and Materials Physics. 59: 10744-10747. DOI: 10.1103/Physrevb.59.10744  0.673
1999 Studenikin SA, Chaplik AV, Panaev IA, Salis G, Ensslin K, Maranowski K, Gossard AC. Classical magnetotransport in a parabolic quantum well with a strong intersubband scattering Semiconductor Science and Technology. 14: 604-610. DOI: 10.1088/0268-1242/14/7/303  0.61
1999 Livermore C, Duncan DS, Westervelt RM, Maranowski KD, Gossard AC. Measuring interactions between tunnel-coupled quantum dots in the quantum Hall regime Journal of Applied Physics. 86: 4043-4045. DOI: 10.1063/1.371326  0.676
1999 Streibl M, Wixforth A, Kotthaus JP, Govorov AO, Kadow C, Gossard AC. Imaging of acoustic charge transport in semiconductor heterostructures by surface acoustic waves Applied Physics Letters. 75: 4139-4141. DOI: 10.1063/1.125562  0.646
1999 Kadow C, Fleischer SB, Ibbetson JP, Bowers JE, Gossard AC, Dong JW, Palmstrøm CJ. Self-assembled ErAs islands in GaAs: Growth and subpicosecond carrier dynamics Applied Physics Letters. 75: 3548-3550. DOI: 10.1063/1.125384  0.326
1999 Kadow C, Fleischer SB, Ibbetson JP, Bowers JE, Gossard AC. Subpicosecond carrier dynamics in low-temperature grown GaAs on Si substrates Applied Physics Letters. 75: 2575-2577. DOI: 10.1063/1.125082  0.642
1999 Harris JGE, Awschalom DD, Matsukura F, Ohno H, Maranowski KD, Gossard AC. Integrated micromechanical cantilever magnetometry of Ga1−xMnxAs Applied Physics Letters. 75: 1140-1142. DOI: 10.1063/1.124622  0.684
1999 Adourian AS, Livermore C, Westervelt RM, Campman KL, Gossard AC. Evolution of Coulomb blockade spectra in parallel coupled quantum dots Applied Physics Letters. 75: 424-426. DOI: 10.1063/1.124396  0.442
1999 Ulrich J, Zobl R, Unterrainer K, Strasser G, Gornik E, Maranowski KD, Gossard AC. Temperature dependence of far-infrared electroluminescence in parabolic quantum wells Applied Physics Letters. 74: 3158-3160. DOI: 10.1063/1.124091  0.351
1999 Jackson AW, Ibbetson JP, Gossard AC, Mishra UK. Reduced Thermal Conductivity In Low-Temperature-Grown Gaas Applied Physics Letters. 74: 2325-2327. DOI: 10.1063/1.123839  0.31
1999 Heremans JJ, von Molnár S, Awschalom DD, Gossard AC. Ballistic electron focusing by elliptic reflecting barriers Applied Physics Letters. 74: 1281-1283. DOI: 10.1063/1.123524  0.546
1999 Duncan DS, Livermore C, Westervelt RM, Maranowski KD, Gossard AC. Direct measurement of the destruction of charge quantization in a single-electron box Applied Physics Letters. 74: 1045-1047. DOI: 10.1063/1.123450  0.646
1999 Campman KL, Maranowski KD, Schmidt H, Imamoglu A, Gossard AC. Quantum interference of intersubband transitions in coupled quantum wells Physica E: Low-Dimensional Systems and Nanostructures. 5: 16-26. DOI: 10.1016/S1386-9477(99)00035-1  0.639
1999 Salis G, Heinzel T, Ensslin K, Homan O, Bächtold W, Maranowski K, Gossard A. Spectroscopy of coupled one-dimensional subbands Microelectronic Engineering. 47: 175-177. DOI: 10.1016/S0167-9317(99)00183-5  0.671
1999 Druist DP, Yoo KH, Turley PJ, Gwinn EG, Maranowski K, Gossard AC. Conductance fluctuations of chiral metals Superlattices and Microstructures. 25: 181-184. DOI: 10.1006/Spmi.1998.0634  0.648
1998 Zielinski L, Chaltikian K, Birnbaum K, Marcus CM, Campman K, Gossard AC. Classical advection of guiding centers in a random magnetic field Europhysics Letters (Epl). 42: 73-78. DOI: 10.1209/Epl/I1998-00554-7  0.325
1998 Dolgopolov VT, Tsydynzhapov GE, Shashkin AA, Deviatov EV, Hastreiter F, Hartung M, Wixforth A, Campman KL, Gossard AC. Magnetic-field-induced hybridization of electron subbands in a coupled double quantum well Jetp Letters. 67: 595-601. DOI: 10.1134/1.567732  0.444
1998 Shakouri A, Liu B, Kim BG, Abraham P, Jackson AW, Gossard AC, Bowers JE. Wafer-fused optoelectronics for switching Journal of Lightwave Technology. 16: 2236-2242. DOI: 10.1109/50.736590  0.308
1998 Wirth S, Heremans JJ, Von Molnár S, Field M, Campman KL, Gossard AC, Awschalom DD. Magnetic anisotropy in arrays of nanometer-scale iron particles Ieee Transactions On Magnetics. 34: 1105-1107. DOI: 10.1109/20.706382  0.484
1998 Patel SR, Cronenwett SM, Stewart DR, Huibers AG, Marcus CM, Duruöz CI, Harris JS, Campman K, Gossard AC. Statistics of Coulomb Blockade Peak Spacings Physical Review Letters. 80: 4522-4525. DOI: 10.1103/Physrevlett.80.4522  0.451
1998 Druist DP, Turley PJ, Maranowski KD, Gwinn EG, Gossard AC. Observation of chiral surface states in the integer quantum hall effect Physical Review Letters. 80: 365-368. DOI: 10.1103/Physrevlett.80.365  0.663
1998 Okamura H, Heiman D, Sundaram M, Gossard AC. Inhibited recombination of charged magnetoexcitons Physical Review B - Condensed Matter and Materials Physics. 58. DOI: 10.1103/Physrevb.58.R15985  0.409
1998 Vieira GS, Allen SJ, Guimaraes PSS, Campman KL, Gossard AC. Resonantly enhanced photon-assisted tunneling in a multiple-quantum-well superlattice Physical Review B. 58: 7136-7140. DOI: 10.1103/Physrevb.58.7136  0.379
1998 Holtz PO, Ferreira AC, Sernelius BE, Buyanov A, Monemar B, Mauritz O, Ekenberg U, Sundaram M, Campman K, Merz JL, Gossard AC. Many-body effects in highly acceptor-doped GaAs/Al x Ga 1-x As quantum wells Physical Review B. 58: 4624-4628. DOI: 10.1103/Physrevb.58.4624  0.344
1998 Salis G, Ruhstaller B, Ensslin K, Campman K, Maranowski K, Gossard AC. Subband densities in quantum wells under in-plane magnetic fields Physical Review B. 58: 1436-1441. DOI: 10.1103/Physrevb.58.1436  0.629
1998 Denk P, Hartung M, Streibl M, Wixforth A, Campman KL, Gossard AC. Magnetic-Field-Induced Charge Localization In A High-Mobility Semiconductor Superlattice Physical Review B. 57: 13094-13098. DOI: 10.1103/Physrevb.57.13094  0.318
1998 Beck RG, Eriksson MA, Westervelt RM, Maranowski KD, Gossard AC. Measuring the mechanical resonance of a GaAs/AlGaAs cantilever using a strain-sensing field-effect transistor Semiconductor Science and Technology. 13: A83-A85. DOI: 10.1088/0268-1242/13/8A/025  0.619
1998 Beck RG, Eriksson MA, Westervelt RM, Maranowski KD, Gossard AC. Measuring the mechanical resonance of a GaAs/AlGaAs cantilever using a strain-sensing field-effect transistor Semiconductor Science and Technology. 13: A83-A85. DOI: 10.1088/0268-1242/13/8A/025  0.564
1998 Adourian AS, Yang S, Westervelt RM, Campman KL, Gossard AC. Josephson junction oscillators as probes of electronic nanostructures Journal of Applied Physics. 84: 5808-5810. DOI: 10.1063/1.368847  0.445
1998 Beck RG, Eriksson MA, Topinka MA, Westervelt RM, Maranowski KD, Gossard AC. GaAs/AlGaAs self-sensing cantilevers for low temperature scanning probe microscopy Applied Physics Letters. 73: 1149-1151. DOI: 10.1063/1.122112  0.581
1998 Luyken RJ, Lorke A, Song AM, Streibl M, Kotthaus JP, Kadow C, English JH, Gossard AC. Highly anharmonic potential modulation in lateral superlattices fabricated using epitaxial InGaAs stressors Applied Physics Letters. 73: 1110-1112. DOI: 10.1063/1.122100  0.641
1998 Switkes M, Huibers AG, Marcus CM, Campman K, Gossard AC. High bias transport and magnetometer design in open quantum dots Applied Physics Letters. 72: 471-473. DOI: 10.1063/1.120789  0.43
1998 Mirin RP, Gossard AC, Bowers JE. Characterization of InGaAs quantum dot lasers with a single quantum dot layer as an active region Physica E: Low-Dimensional Systems and Nanostructures. 2: 738-742. DOI: 10.1016/S1386-9477(98)00151-9  0.391
1998 Cates CL, Briceño G, Sherwin MS, Maranowski KD, Campman K, Gossard AC. A concept for a tunable antenna-coupled intersubband terahertz (TACIT) detector Physica E: Low-Dimensional Systems and Nanostructures. 2: 463-467. DOI: 10.1016/S1386-9477(98)00095-2  0.612
1998 Heyman JN, Barnhorst J, Unterrainer K, Williams J, Sherwin MS, Campman K, Gossard AC. Intersubband scattering of cold electrons in a coupled quantum well with subband spacing below ℏωLO Physica E: Low-Dimensional Systems and Nanostructures. 2: 195-199. DOI: 10.1016/S1386-9477(98)00042-3  0.389
1998 Williams JB, Craig K, Sherwin MS, Campman K, Gossard AC. Measurements of far-infrared intersubband absorption linewidths in GaAs/AlGaAs quantum wells as a function of temperature and charge density Physica E: Low-Dimensional Systems and Nanostructures. 2: 177-180. DOI: 10.1016/S1386-9477(98)00038-1  0.404
1998 Geißelbrecht W, Sahr U, Masten A, Gräbner O, Klütz U, Forkel M, Döhler G, Campman K, Gossard A. Electro-optical probing of envelope wavefunctions in GaAs/AlGaAs parabolic quantum well structures Physica E: Low-Dimensional Systems and Nanostructures. 2: 106-110. DOI: 10.1016/S1386-9477(98)00024-1  0.425
1998 Shtrichman I, Oiknine-Schlesinger J, Gershoni D, Ehrenfreund E, Maranowski KD, Gossard AC. Momentum redistribution times of 2D excitons measured by transient resonantly induced intersubband absorption Physica E-Low-Dimensional Systems & Nanostructures. 2: 65-69. DOI: 10.1016/S1386-9477(98)00015-0  0.335
1998 Vieira GS, Guimarães PSS, Alves ES, Allen SJ, Campman KL, Gossard AC. Resonant magnetic field induced enhancement of the tunneling current in multi-quantum wells Physica B-Condensed Matter. 256: 527-530. DOI: 10.1016/S0921-4526(98)00541-9  0.379
1998 Heinzel T, Salis G, Wirth P, Ensslin K, Maranowski K, Gossard AC. Investigation of the spatial variation of scattering centers in parabolic quantum wells Physica B-Condensed Matter. 256: 252-255. DOI: 10.1016/S0921-4526(98)00522-5  0.65
1998 Ihn T, Huberty M, Salis G, Ensslin K, Maranowski K, Gossard AC. Universal conductance fluctuations in a parabolic quantum well tunable from two- to three-dimensional behavior Physica B-Condensed Matter. 256: 401-404. DOI: 10.1016/S0921-4526(98)00501-8  0.366
1998 Okamura H, Heiman D, Sundaram M, Gossard AC. Inhibited recombination of negatively-charged excitons in GaAs quantum wells at high magnetic fields Physica B: Condensed Matter. 256: 470-473. DOI: 10.1016/S0921-4526(98)00489-X  0.364
1998 Salis G, Heinzel T, Ensslin K, Homan O, Bächtold W, Maranowski K, Gossard AC. Coupled one-dimensional subbands in in-plane magnetic fields Physica B-Condensed Matter. 256: 384-387. DOI: 10.1016/S0921-4526(98)00487-6  0.659
1998 Salis G, Ensslin K, Campman KB, Maranowski K, Gossard AC. Wave-function spectroscopy in parabolic quantum wells Physica B-Condensed Matter. 249: 941-945. DOI: 10.1016/S0921-4526(98)00350-0  0.645
1998 Lundström T, Holtz PO, Bergman JP, Buyanov A, Monemar B, Campman K, Merz JL, Gossard AC. Dynamical studies of the radiative recombination process in a modulation doped GaAs/AlGaAs heterostructure Physica B-Condensed Matter. 249: 767-770. DOI: 10.1016/S0921-4526(98)00310-X  0.379
1998 Turley PJ, Druist DP, Gwinn EG, Maranowski K, Campmann K, Gossard AC. Tunneling through point contacts in the quantum Hall effect Physica B: Condensed Matter. 249: 410-414. DOI: 10.1016/S0921-4526(98)00146-X  0.644
1998 Marcus CM, Patel SR, Duruöz CI, Harris JS, Campman K, Gossard AC. Statistics of peak spacings and widths in the quantum coulomb blockade regime Physica B-Condensed Matter. 249: 201-205. DOI: 10.1016/S0921-4526(98)00098-2  0.476
1998 Druist DP, Turley PJ, Gwinn EG, Maranowski K, Gossard AC. 2D transport at the surface of a 3D quantum Hall system Physica B: Condensed Matter. 249: 70-74. DOI: 10.1016/S0921-4526(98)00069-6  0.646
1998 Dzurak AS, Kane BE, Clark RG, Lumpkin NE, Brien JO, Facer GR, Starrett RP, Skougarevsky A, Nakagawa H, Miura N, Rickel DG, Goettee JD, Campbell LJ, Fowler CM, Mielke C, ... ... Gossard AC, et al. Low-temperature transport measurements of superconductors and semiconductors in magnetic fields to 800 T Physica B-Condensed Matter. 246: 40-49. DOI: 10.1016/S0921-4526(98)00046-5  0.623
1998 Lumpkin NE, Kane BE, Dzurak AS, Clark RG, Starrett RP, O'Brien J, Facer GR, Skougarevsky AV, Miura N, Nakagawa H, Maranowski KD, Gossard AC, Mitchell EE, Müller KH. Dirac series experiments in 800 T fields:: Innovations for transport measurements Physica B-Condensed Matter. 246: 395-399. DOI: 10.1016/S0921-4526(97)00942-3  0.623
1998 Geisselbrecht W, Masten A, Gräbner O, Forkel M, Döhler G, Campman K, Gossard A. Electro-optic effects in GaAs/AlGaAs parabolic quantum well structures Superlattices and Microstructures. 23: 93-96. DOI: 10.1006/Spmi.1996.0312  0.384
1998 Marcus C, Folk J, Patel S, Cronenwett S, Huibers A, Campman K, Gossard A. Mesoscopic fluctuations of tunneling and cotunneling in quantum dots Superlattices and Microstructures. 23: 161-172. DOI: 10.1006/Spmi.1996.0200  0.403
1997 Lundström T, Bergman JP, Holtz PO, Monemar B, Campman K, Merz JL, Gossard AC. Theoretical and Experimental Study of the Radiative Decay Process in a Modulation Doped GaAs/AlGaAs Heterointerface Acta Physica Polonica A. 92: 824-828. DOI: 10.12693/Aphyspola.92.824  0.305
1997 Jackson AW, Pinsukanjana PR, Gossard AC, Coldren LA. In situ monitoring and control for MBE growth of optoelectronic devices Ieee Journal On Selected Topics in Quantum Electronics. 3: 836-844. DOI: 10.1109/2944.640637  0.303
1997 Salis G, Graf B, Ensslin K, Campman K, Maranowski K, Gossard AC. Wave Function Spectroscopy in Quantum Wells with Tunable Electron Density Physical Review Letters. 79: 5106-5109. DOI: 10.1103/Physrevlett.79.5106  0.642
1997 Cronenwett SM, Patel SR, Marcus CM, Campman K, Gossard AC. Mesoscopic Fluctuations of Elastic Cotunneling in Coulomb Blockaded Quantum Dots Physical Review Letters. 79: 2312-2315. DOI: 10.1103/Physrevlett.79.2312  0.414
1997 Rimberg AJ, Ho TR, Kurdak Ç, Clarke J, Campman KL, Gossard AC. Dissipation-Driven Superconductor-Insulator Transition in a Two-Dimensional Josephson-Junction Array Physical Review Letters. 78: 2632-2635. DOI: 10.1103/Physrevlett.78.2632  0.329
1997 Kang W, Young JB, Hannahs ST, Palm E, Campman KL, Gossard AC. Evidence For A Spin Transition In The V=2/5 Fractional Quantum Hall Effect Physical Review B. 56. DOI: 10.1103/Physrevb.56.R12776  0.37
1997 Wendler L, Kraft T, Hartung M, Berger A, Wixforth A, Sundaram M, English JH, Gossard AC. Optical Response Of Grating-Coupler-Induced Intersubband Resonances: The Role Of Wood'S Anomalies Physical Review B. 55: 2303-2314. DOI: 10.1103/Physrevb.55.2303  0.375
1997 Deviatov EV, Dolgopolov VT, Williams FIB, Jager B, Lorke A, Kotthaus JP, Gossard AC. Excitation of edge magnetoplasmons in a two-dimensional electron gas by inductive coupling Applied Physics Letters. 71: 3655-3657. DOI: 10.1063/1.120471  0.352
1997 Hu J, Beck RG, Deng T, Westervelt RM, Maranowski KD, Gossard AC, Whitesides GM. Using soft lithography to fabricate GaAs/AlGaAs heterostructure field effect transistors Applied Physics Letters. 71: 2020-2022. DOI: 10.1063/1.119774  0.607
1997 Crouch CH, Livermore C, Westervelt RM, Campman KL, Gossard AC. Evolution of the Coulomb gap in tunnel-coupled quantum dots Applied Physics Letters. 71: 817-819. DOI: 10.1063/1.119656  0.436
1997 Černe J, Kono J, Inoshita T, Sherwin M, Sundaram M, Gossard AC. Near-infrared sideband generation induced by intense far-infrared radiation in GaAs quantum wells Applied Physics Letters. 70: 3543-3545. DOI: 10.1063/1.119227  0.596
1997 Schmidt H, Campman KL, Gossard AC, Imamoǧlu A. Tunneling induced transparency: Fano interference in intersubband transitions Applied Physics Letters. 70: 3455-3457. DOI: 10.1063/1.119199  0.374
1997 Haubrich AGC, Wharam DA, Kriegelstein H, Manus S, Lorke A, Kotthaus JP, Gossard AC. Parallel quantum-point-contacts as high-frequency-mixers Applied Physics Letters. 70: 3251-3253. DOI: 10.1063/1.119139  0.388
1997 Salis G, Ensslin K, Campman K, Maranowski K, Gossard A. Probing electron probability-density in parabolic quantum wells Physica E: Low-Dimensional Systems and Nanostructures. 1: 254-258. DOI: 10.1016/S1386-9477(97)00054-4  0.663
1997 Marcus C, Patel S, Huibers A, Cronenwett S, Switkes M, Chan I, Clarke R, Folk J, Godijn S, Campman K, Gossard A. Quantum chaos in open versus closed quantum dots: Signatures of interacting particles Chaos, Solitons & Fractals. 8: 1261-1279. DOI: 10.1016/S0960-0779(97)00019-2  0.423
1997 Ferreira AC, Holtz PO, Buyanova I, Monemar B, Sundaram M, Merz JL, Gossard AC. Optical spectroscopy of MBE grown quantum wells at various acceptor doping levels Thin Solid Films. 306: 244-247. DOI: 10.1016/S0040-6090(97)00178-8  0.412
1997 Mirin RP, Ibbetson JP, Bowers JE, Gossard AC. Overgrowth of InGaAs quantum dots formed by alternating molecular beam epitaxy Journal of Crystal Growth. 696-701. DOI: 10.1016/S0022-0248(96)00870-6  0.426
1997 Zeuner S, Keay BJ, Allen SJ, Maranowski KD, Gossard AC, Bhattacharya U, Rodwell MJW. THz response of GaAs/AlGaAs superlattices: From classical to quantum dynamics Superlattices and Microstructures. 22. DOI: 10.1006/Spmi.1996.0288  0.67
1997 Patel S, Cronenwett S, Huibers A, Switkes M, Folk J, Marcus C, Campman K, Gossard A. Universal fluctuations of Coulomb blockade peaks in quantum dots Superlattices and Microstructures. 21: 43-48. DOI: 10.1006/Spmi.1996.0139  0.39
1997 Kono J, Su MY, Nordstrom KB, Černe J, Sherwin MS, Allen SJ, Inoshita T, Noda T, Sakaki H, Bauer GEW, Sundaram M, Gossard AC. Terahertz linear and nonlinear dynamics in confined magnetoexcitons Physica Status Solidi (a) Applied Research. 164: 567-570. DOI: 10.1002/1521-396X(199711)164:1<567::Aid-Pssa567>3.0.Co;2-5  0.559
1996 Cerne J, Kono J, Sherwin MS, Sundaram M, Gossard AC, Bauer GE. Terahertz Dynamics of Excitons in GaAs/AlGaAs Quantum Wells. Physical Review Letters. 77: 1131-1134. PMID 10062998 DOI: 10.1103/Physrevlett.77.1131  0.56
1996 Folk JA, Patel SR, Godijn SF, Huibers AG, Cronenwett SM, Marcus CM, Campman K, Gossard AC. Statistics and parametric correlations of Coulomb blockade peak fluctuations in quantum dots. Physical Review Letters. 76: 1699-1702. PMID 10060495 DOI: 10.1103/Physrevlett.76.1699  0.414
1996 Ferreira AC, Holtz PO, Monemar B, Sundaram M, Campman K, Merz JL, Gossard AC. Excitons bound at interacting acceptors in AlxGa1-xAs/GaAs quantum wells. Physical Review. B, Condensed Matter. 54: 16994-16997. PMID 9985830 DOI: 10.1103/Physrevb.54.16994  0.394
1996 Ferreira AC, Holtz PO, Sernelius BE, Buyanova I, Monemar B, Mauritz O, Ekenberg U, Sundaram M, Campman K, Merz JL, Gossard AC. Exciton properties in p-type GaAs/AlxGa1-xAs quantum wells in the high doping regime. Physical Review. B, Condensed Matter. 54: 16989-16993. PMID 9985829 DOI: 10.1103/Physrevb.54.16989  0.399
1996 Zeuner S, Keay BJ, Allen SJ, Maranowski KD, Gossard AC, Bhattacharya U, Rodwell MJ. Transition from classical to quantum response in semiconductor superlattices at THz frequncies. Physical Review. B, Condensed Matter. 53: R1717-R1720. PMID 9983689 DOI: 10.1103/Physrevb.53.R1717  0.641
1996 Waugh FR, Berry MJ, Crouch CH, Livermore C, Mar DJ, Westervelt RM, Campman KL, Gossard AC. Measuring interactions between tunnel-coupled quantum dots. Physical Review. B, Condensed Matter. 53: 1413-1420. PMID 9983601 DOI: 10.1103/Physrevb.53.1413  0.424
1996 Buyanov AV, Ferreira AC, Söderström E, Buyanova IA, Holtz PO, Sernelius B, Monemar B, Sundaram M, Campman K, Merz JL, Gossard AC. Thermally activated intersubband and hopping transport in center-doped p-type GaAs/AlxGa1-xAs quantum wells. Physical Review. B, Condensed Matter. 53: 1357-1361. PMID 9983595 DOI: 10.1103/Physrevb.53.1357  0.374
1996 Lorke A, Kotthaus JP, English JH, Gossard AC. Local Far-Infrared Spectroscopy Of Edge States In The Quantum Hall Regime Physical Review B. 53: 1054-1057. PMID 9983553 DOI: 10.1103/Physrevb.53.1054  0.4
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