Year |
Citation |
Score |
2023 |
Stevenson JM, Ampong E, Shi Y. Understanding the Reaction Chemistry of 1,1,3,3-Tetramethyldisilazane as a Precursor Gas in a Catalytic Chemical Vapor Deposition Process. The Journal of Physical Chemistry. A. PMID 37882654 DOI: 10.1021/acs.jpca.3c04761 |
0.497 |
|
2022 |
Yadav A, Stevenson J, Ampong E, Shi Y. Theoretical Study on the Decomposition Kinetics and Thermochemistry of Tetramethyldisilazane and Hexamethyldisilazane─Formation of Silanimine and Silene Species. The Journal of Physical Chemistry. A. PMID 36315958 DOI: 10.1021/acs.jpca.2c05349 |
0.454 |
|
2021 |
Stevenson JM, Shi Y. Theoretical Study of Decomposition Kinetics and Thermochemistry of Bis(dimethylamino)silane-Formation of Methyleneimine and Silanimine Species. The Journal of Physical Chemistry. A. 125: 8175-8186. PMID 34515485 DOI: 10.1021/acs.jpca.1c04940 |
0.424 |
|
2019 |
Badran I, Rauk A, Shi Y. New Orbital Symmetry Allowed Route for Cycloreversion of Silacyclobutane and Its Methyl Derivatives. The Journal of Physical Chemistry. A. PMID 30735382 DOI: 10.1021/Acs.Jpca.8B08071 |
0.353 |
|
2019 |
Owusu-Ansah E, Rajendran A, Shi Y. Catalytic dissociation of tris(dimethylamino)silane on hot tungsten and tantalum filament surfaces. Physical Chemistry Chemical Physics : Pccp. PMID 30714585 DOI: 10.1039/C8Cp06669H |
0.515 |
|
2018 |
Fulton AJ, Kollath VO, Karan K, Shi Y. Macroporous silicon formation by electrochemical anodization of n-type silicon without illumination Journal of Applied Physics. 124: 095701. DOI: 10.1063/1.5041373 |
0.336 |
|
2017 |
Badran I, Shi Y. A kinetic study of the gas-phase reactions of 1-methylsilacyclobutane in hot wire chemical vapor deposition. Physical Chemistry Chemical Physics : Pccp. PMID 29170772 DOI: 10.1039/C7Cp06082C |
0.479 |
|
2017 |
Owusu-Ansah E, Cairns E, Shi Y. Characterization of Si atomic transitions using pulsed electric discharge and resonance-enhanced multiphoton ionization techniques Journal of Analytical Atomic Spectrometry. 32: 2423-2432. DOI: 10.1039/C7Ja00275K |
0.342 |
|
2017 |
Shi Y. Role of free-radical chain reactions and silylene chemistry in using methyl-substituted silane molecules in hot-wire chemical vapor deposition Thin Solid Films. 635: 42-47. DOI: 10.1016/J.Tsf.2016.12.007 |
0.599 |
|
2017 |
Shi Y, Badran I, Mulmi S. Crystalline tantalum carbide and ditungsten carbide formation via hot wire chemical vapor deposition using the precursor of 1-methylsilacyclobutane Surface and Coatings Technology. 326: 103-110. DOI: 10.1016/J.Surfcoat.2017.07.047 |
0.447 |
|
2016 |
Toukabri R, Shi Y. Hydrogen elimination from the dissociation of methyl-substituted silanes on tungsten and tantalum surfaces Canadian Journal of Chemistry. 94: 265-272. DOI: 10.1139/Cjc-2015-0166 |
0.748 |
|
2016 |
Shi Y, Tong L, Mulmi S. Characterization of thin film deposits on tungsten filaments in catalytic chemical vapor deposition using 1,1-dimethylsilacyclobutane Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 34: 051517. DOI: 10.1116/1.4961932 |
0.442 |
|
2015 |
Shi Y. Hot wire chemical vapor deposition chemistry in the gas phase and on the catalyst surface with organosilicon compounds. Accounts of Chemical Research. 48: 163-73. PMID 25586211 DOI: 10.1021/Ar500241X |
0.571 |
|
2015 |
Shi Y. Hot wire chemical vapor deposition chemistry in the gas phase and on the catalyst surface with organosilicon compounds Accounts of Chemical Research. 48: 163-173. DOI: 10.1021/ar500241x |
0.493 |
|
2014 |
Toukabri R, Shi YJ. Dominance of silylene chemistry in the decomposition of monomethylsilane in the presence of a heated metal filament. The Journal of Physical Chemistry. A. 118: 3866-74. PMID 24821598 DOI: 10.1021/Jp502795U |
0.781 |
|
2014 |
Toukabri R, Shi Y. Unraveling the complex chemistry using dimethylsilane as a precursor gas in hot wire chemical vapor deposition. Physical Chemistry Chemical Physics : Pccp. 16: 7896-906. PMID 24647875 DOI: 10.1039/C4Cp00275J |
0.77 |
|
2013 |
Toukabri R, Alkadhi N, Shi YJ. Formation of methyl radicals from decomposition of methyl-substituted silanes over tungsten and tantalum filament surfaces. The Journal of Physical Chemistry. A. 117: 7697-704. PMID 23876080 DOI: 10.1021/Jp404882T |
0.744 |
|
2013 |
Toukabri R, Shi Y. Effect of trimethylsilane pressure on hot-wire chemical vapor deposition chemistry using vacuum ultraviolet laser ionization mass spectrometry Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 31: 061606. DOI: 10.1116/1.4825105 |
0.753 |
|
2013 |
Shi Y, Badran I, Tkalych A, Kan WH, Thangadurai V. Growth of crystalline tungsten carbides using 1,1,3,3-tetramethyl-1,3- disilacyclobutane on a heated tungsten filament Journal of Physical Chemistry C. 117: 3389-3395. DOI: 10.1021/Jp3112777 |
0.41 |
|
2013 |
Coclite AM, Shi Y, Gleason KK. Super-hydrophobic and oloephobic crystalline coatings by initiated Chemical Vapor Deposition Physics Procedia. 46: 56-61. DOI: 10.1016/J.Phpro.2013.07.045 |
0.307 |
|
2012 |
Coclite AM, Shi Y, Gleason KK. Controlling the degree of crystallinity and preferred crystallographic orientation in poly-perfluorodecylacrylate thin films by initiated chemical vapor deposition Advanced Functional Materials. 22: 2167-2176. DOI: 10.1002/Adfm.201103035 |
0.35 |
|
2011 |
Shi YJ, Li XM, Toukabri R, Tong L. Effect of Si-H bond on the gas-phase chemistry of trimethylsilane in the hot wire chemical vapor deposition process. The Journal of Physical Chemistry. A. 115: 10290-8. PMID 21834557 DOI: 10.1021/Jp203966H |
0.786 |
|
2011 |
Sveen CE, Shi Y. Effect of filament temperature and deposition time on the formation of tungsten silicide with silane Thin Solid Films. 519: 4447-4450. DOI: 10.1016/J.Tsf.2011.01.327 |
0.413 |
|
2009 |
Liu Y, Consta S, Shi Y, Lipson RH, Goddard WA. Prediction of the size distributions of methanol-ethanol clusters detected in VUV laser/time-of-flight mass spectrometry. The Journal of Physical Chemistry. A. 113: 6865-75. PMID 19489603 DOI: 10.1021/Jp900487X |
0.315 |
|
2009 |
Tong L, Shi Y. A mechanistic study of gas-phase reactions with 1,1,3,3-tetramethyl-1,3-disilacyclobutane in the hot-wire chemical vapor deposition process Thin Solid Films. 517: 3461-3465. DOI: 10.1016/J.TSF.2009.01.058 |
0.405 |
|
2008 |
Shi Y, Li X, Tong L, Toukabri R, Eustergerling B. Decomposition of hexamethyldisilane on a hot tungsten filament and gas-phase reactions in a hot-wire chemical vapor deposition reactor. Physical Chemistry Chemical Physics : Pccp. 10: 2543-51. PMID 18446255 DOI: 10.1039/B718743B |
0.765 |
|
2008 |
Eustergerling BD, Shi Y. Formation of aminosilanes in the hot-wire chemical vapor deposition process using SiH4-NH3 gas mixtures Arkivoc. 2009. DOI: 10.3998/Ark.5550190.0010.508 |
0.556 |
|
2008 |
Tong L, Sveen CE, Shi Y. Study of tungsten filament aging in hot-wire chemical vapor deposition with silacyclobutane as a source gas and the H2 etching effect Journal of Applied Physics. 103: 123534. DOI: 10.1063/1.2949278 |
0.473 |
|
2008 |
Shi Y, Eustergerling B, Li X. Mass spectrometric study of gas-phase chemistry in the hot-wire CVD processes of SiH4/NH3 mixtures Thin Solid Films. 516: 506-510. DOI: 10.1016/J.TSF.2007.06.029 |
0.311 |
|
2007 |
Eustergerling B, Hèden M, Shi Y. Application of laser induced electron impact ionization to the deposition chemistry in the hot-wire chemical vapor deposition process with SiH4-NH3 gas mixtures. Journal of the American Society For Mass Spectrometry. 18: 1950-8. PMID 17869128 DOI: 10.1016/J.Jasms.2007.08.012 |
0.463 |
|
2007 |
Li X, Eustergerling B, Shi Y. Mass spectrometric study of gas-phase chemistry in a hot-wire chemical vapor deposition reactor with tetramethylsilane International Journal of Mass Spectrometry. 263: 233-242. DOI: 10.1016/J.IJMS.2007.02.051 |
0.34 |
|
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