Xiaoyun Wei, Ph.D. - Publications
Affiliations: | 2008 | Auburn University, Auburn, AL, United States |
Area:
Electronics and Electrical EngineeringYear | Citation | Score | |||
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2009 | Zhang T, Wei X, Niu G, Cressler JD, Marshall PW, Reed RA. A Mechanism Versus SEU Impact Analysis of Collector Charge Collection in SiGe HBT Current Mode Logic Ieee Transactions On Nuclear Science. 56: 3071-3077. DOI: 10.1109/Tns.2009.2032911 | 0.477 | |||
2009 | Wei X, Niu G, Li Y, Yang M, Taylor SS. Modeling and Characterization of Intermodulation Linearity on a 90-nm RF CMOS Technology Ieee Transactions On Microwave Theory and Techniques. 57: 965-971. DOI: 10.1109/Tmtt.2009.2014448 | 0.468 | |||
2008 | Wei X, Zhang T, Niu G, Varadharajaperumal M, Cressler JD, Marshall PW. 3-D Mixed-Mode Simulation of Single Event Transients in SiGe HBT Emitter Followers and Resultant Hardening Guidelines Ieee Transactions On Nuclear Science. 55: 3360-3366. DOI: 10.1109/Tns.2008.2006840 | 0.472 | |||
2007 | Varadharajaperumal M, Niu G, Wei X, Zhang T, Cressler JD, Reed RA, Marshall PW. 3-D Simulation of SEU Hardening of SiGe HBTs Using Shared Dummy Collector Ieee Transactions On Nuclear Science. 54: 2330-2337. DOI: 10.1109/Tns.2007.910290 | 0.484 | |||
2007 | Wei X, Niu G, Sweeney S, Liang Q, Wang X, Taylor S. A General 4-Port Solution for 110 GHz On-Wafer Transistor Measurements With or Without Impedance Standard Substrate (ISS) Calibration Ieee Transactions On Electron Devices. 54: 2706-2714. DOI: 10.1109/Ted.2007.904362 | 0.42 | |||
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