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Heather M. Hill - Publications

Affiliations: 
Physics Columbia University, New York, NY 
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39 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2023 Saha D, Waters D, Yeh CC, Mhatre SM, Tran NTM, Hill HM, Watanabe K, Taniguchi T, Newell DB, Yankowitz M, Rigosi AF. Graphene-Based Analog of Single-Slit Electron Diffraction. Physical Review. B. 108. PMID 37841515 DOI: 10.1103/physrevb.108.125420  0.656
2023 Lin YC, Torsi R, Younas R, Hinkle CL, Rigosi AF, Hill HM, Zhang K, Huang S, Shuck CE, Chen C, Lin YH, Maldonado-Lopez D, Mendoza-Cortes JL, Ferrier J, Kar S, et al. Recent Advances in 2D Material Theory, Synthesis, Properties, and Applications. Acs Nano. PMID 37219929 DOI: 10.1021/acsnano.2c12759  0.617
2022 Chowdhury S, Rigosi AF, Hill HM, Vora P, Hight Walker AR, Tavazza F. Computational Methods for Charge Density Waves in 2D Materials. Nanomaterials (Basel, Switzerland). 12. PMID 35159849 DOI: 10.3390/nano12030504  0.64
2021 Chowdhury S, Hill HM, Rigosi AF, Briggs A, Berger H, Newell DB, Walker ARH, Tavazza F. Examining Experimental Raman Mode Behavior in Mono- and Bilayer 2H-TaSe via Density Functional Theory: Implications for Quantum Information Science. Acs Applied Nano Materials. 4. PMID 34250452 DOI: 10.1021/acsanm.0c03222  0.622
2020 Rigosi AF, Marzano M, Levy A, Hill HM, Patel DK, Kruskopf M, Jin H, Elmquist RE, Newell DB. Analytical determination of atypical quantized resistances in graphene junctions. Physica. B, Condensed Matter. 582. PMID 32863578 DOI: 10.1016/J.Physb.2019.411971  0.687
2020 Liu CI, Scaletta DS, Patel DK, Kruskopf M, Levy A, Hill HM, Rigosi AF. Analysing quantized resistance behaviour in graphene Corbino junction devices. Journal of Physics D: Applied Physics. 53. PMID 32831402 DOI: 10.1088/1361-6463/Ab83Bb  0.675
2020 Liu C, Scaletta DS, Patel DK, Kruskopf M, Levy A, Hill HM, Rigosi AF. Analysing quantized resistance behaviour in graphene Corbino p-n junction devices Journal of Physics D: Applied Physics. 53: 275301. DOI: 10.1088/1361-6463/ab83bb  0.634
2020 Patel D, Marzano M, Liu C, Hill HM, Kruskopf M, Jin H, Hu J, Newell DB, Liang C, Elmquist R, Rigosi AF. Accessing ratios of quantized resistances in graphene p–n junction devices using multiple terminals Aip Advances. 10: 025112. DOI: 10.1063/1.5138901  0.661
2020 Liu C, Patel DK, Marzano M, Kruskopf M, Hill HM, Rigosi AF. Quantum Hall resistance dartboards using graphene p-n junction devices with Corbino geometries Aip Advances. 10: 035205. DOI: 10.1063/1.5136315  0.671
2020 Rigosi AF, Marzano M, Levy A, Hill HM, Patel DK, Kruskopf M, Jin H, Elmquist RE, Newell DB. Analytical determination of atypical quantized resistances in graphene p-n junctions Physica B: Condensed Matter. 582: 411971. DOI: 10.1016/j.physb.2019.411971  0.62
2019 Rigosi AF, Hill HM, Krylyuk S, Nguyen NV, Hight Walker AR, Davydov AV, Newell DB. Dielectric Properties of NbWSe Alloys. Journal of Research of the National Institute of Standards and Technology. 124: 1-10. PMID 34877178 DOI: 10.6028/jres.124.035  0.613
2019 Rigosi AF, Patel D, Marzano M, Kruskopf M, Hill HM, Jin H, Hu J, Walker ARH, Ortolano M, Callegaro L, Liang CT, Newell DB. Atypical Quantized Resistances in Millimeter-Scale Epitaxial Graphene Junctions. Carbon. 154. PMID 32165760 DOI: 10.1016/J.Carbon.2019.08.002  0.68
2019 Hill HM, Chowdhury S, Simpson JR, Rigosi AF, Newell DB, Berger H, Tavazza F, Walker ARH. Phonon origin and lattice evolution in charge density wave states. Physical Review. B. 99. PMID 31579258 DOI: 10.1103/Physrevb.99.174110  0.676
2019 Rigosi AF, Kruskopf M, Hill HM, Jin H, Wu BY, Johnson PE, Zhang S, Berilla M, Hight Walker AR, Hacker CA, Newell DB, Elmquist RE. Gateless and reversible carrier density tunability in epitaxial graphene devices functionalized with chromium tricarbonyl. Carbon. 142. PMID 31097837 DOI: 10.1016/J.Carbon.2018.10.085  0.683
2019 Rigosi AF, Hill H, Krylyuk S, Nguyen NV, Angela R. HW, Davydov AV, Newell DB. Dielectric Properties of NbxW1-xSe2 Alloys Journal of Research of the National Institute of Standards and Technology. 124. DOI: 10.6028/Jres.124.035  0.641
2018 Hill HM, Rigosi AF, Krylyuk S, Tian J, Nguyen NV, Davydov AV, Newell DB, Walker ARH. Comprehensive optical characterization of atomically thin NbSe. Physical Review. B. 98. PMID 30984898 DOI: 10.1103/Physrevb.98.165109  0.683
2018 Rigosi AF, Liu CI, Wu BY, Lee HY, Kruskopf M, Yang Y, Hill HM, Hu J, Bittle EG, Obrzut J, Hight Walker AR, Elmquist RE, Newell DB. Quantum Hall device data monitoring following encapsulating polymer deposition. Data in Brief. 20: 1201-1208. PMID 30238028 DOI: 10.1016/J.Dib.2018.08.121  0.667
2018 Raja A, Selig M, Berghäuser G, Yu J, Hill HM, Rigosi AF, Brus LE, Knorr A, Heinz TF, Malic E, Chernikov A. Enhancement of exciton-phonon scattering from monolayer to bilayer WS2. Nano Letters. PMID 30096239 DOI: 10.1021/Acs.Nanolett.8B01793  0.791
2018 Zhang S, Hill HM, Moudgil K, Richter CA, Hight Walker AR, Barlow S, Marder SR, Hacker CA, Pookpanratana SJ. Controllable, Wide-Ranging n-Doping and p-Doping of Monolayer Group 6 Transition-Metal Disulfides and Diselenides. Advanced Materials (Deerfield Beach, Fla.). e1802991. PMID 30059169 DOI: 10.1002/Adma.201802991  0.389
2018 Rigosi AF, Liu CI, Wu BY, Lee HY, Kruskopf M, Yang Y, Hill HM, Hu J, Bittle EG, Obrzut J, Hight Walker AR, Elmquist RE, Newell DB. Examining epitaxial graphene surface conductivity and quantum Hall device stability with Parylene passivation. Microelectronic Engineering. 194: 51-55. PMID 29881131 DOI: 10.1016/J.Mee.2018.03.004  0.707
2018 Rigosi AF, Hill HM, Glavin NR, Pookpanratana SJ, Yang Y, Boosalis AG, Hu J, Rice A, Allerman AA, Nguyen NV, Hacker CA, Elmquist RE, Hight Walker AR, Newell DB. Measuring the dielectric and optical response of millimeter-scale amorphous and hexagonal boron nitride films grown on epitaxial graphene. 2d Materials. 5. PMID 29545949 DOI: 10.1088/2053-1583/aa9ea3  0.677
2017 Hill HM, Rigosi AF, Chowdhury S, Yang Y, Nguyen NV, Tavazza F, Elmquist RE, Newell DB, Hight Walker AR. Probing the dielectric response of the interfacial buffer layer in epitaxial graphene via optical spectroscopy. Physical Review. B. 96. PMID 29541699 DOI: 10.1103/Physrevb.96.195437  0.714
2017 Rigosi AF, Liu CI, Glavin NR, Yang Y, Hill HM, Hu J, Hight Walker AR, Richter CA, Elmquist RE, Newell DB. Electrical Stabilization of Surface Resistivity in Epitaxial Graphene Systems by Amorphous Boron Nitride Encapsulation. Acs Omega. 2: 2326-2332. PMID 28828410 DOI: 10.1021/acsomega.7b00341  0.675
2017 Rigosi AF, Glavin NR, Liu CI, Yang Y, Obrzut J, Hill HM, Hu J, Lee HY, Hight Walker AR, Richter CA, Elmquist RE, Newell DB. Preservation of Surface Conductivity and Dielectric Loss Tangent in Large-Scale, Encapsulated Epitaxial Graphene Measured by Noncontact Microwave Cavity Perturbations. Small (Weinheim An Der Bergstrasse, Germany). PMID 28544485 DOI: 10.1002/Smll.201700452  0.679
2017 Raja A, Chaves A, Yu J, Arefe G, Hill HM, Rigosi AF, Berkelbach TC, Nagler P, Schüller C, Korn T, Nuckolls C, Hone J, Brus LE, Heinz TF, Reichman DR, et al. Coulomb engineering of the bandgap and excitons in two-dimensional materials. Nature Communications. 8: 15251. PMID 28469178 DOI: 10.1038/Ncomms15251  0.776
2017 Ruppert C, Chernikov A, Hill HM, Rigosi AF, Heinz TF. The role of electronic and phononic excitation in the optical response of monolayer WS2 after ultrafast excitation. Nano Letters. PMID 28059520 DOI: 10.1021/Acs.Nanolett.6B03513  0.724
2017 Hill HM, Rigosi AF, Raja A, Chernikov A, Roquelet C, Heinz TF. Exciton broadening in WS2 /graphene heterostructures Physical Review B. 96. DOI: 10.1103/Physrevb.96.205401  0.795
2016 Hill HM, Rigosi AF, Rim KT, Flynn GW, Heinz TF. Band alignment in MoS2/WS2 transition metal dichalcogenide heterostructures probed by scanning tunneling microscopy and spectroscopy. Nano Letters. PMID 27298270 DOI: 10.1021/Acs.Nanolett.6B01007  0.71
2016 Rigosi AF, Hill HM, Rim KT, Flynn GW, Heinz TF. Electronic band gaps and exciton binding energies in monolayer M ox W1-x S2 transition metal dichalcogenide alloys probed by scanning tunneling and optical spectroscopy Physical Review B - Condensed Matter and Materials Physics. 94. DOI: 10.1103/Physrevb.94.075440  0.735
2015 Chernikov A, van der Zande AM, Hill HM, Rigosi AF, Velauthapillai A, Hone J, Heinz TF. Electrical Tuning of Exciton Binding Energies in Monolayer WS_{2}. Physical Review Letters. 115: 126802. PMID 26431003 DOI: 10.1103/Physrevlett.115.126802  0.739
2015 Rigosi AF, Hill HM, Li Y, Chernikov A, Heinz TF. Probing Interlayer Interactions in Transition Metal Dichalcogenide Heterostructures by Optical Spectroscopy: MoS2/WS2 and MoSe2/WSe2. Nano Letters. 15: 5033-8. PMID 26186085 DOI: 10.1021/Acs.Nanolett.5B01055  0.784
2015 Hill HM, Rigosi AF, Roquelet C, Chernikov A, Berkelbach TC, Reichman DR, Hybertsen MS, Brus LE, Heinz TF. Observation of Excitonic Rydberg States in Monolayer MoS2 and WS2 by Photoluminescence Excitation Spectroscopy. Nano Letters. 15: 2992-7. PMID 25816155 DOI: 10.1021/Nl504868P  0.721
2015 Chernikov A, Ruppert C, Hill HM, Rigosi AF, Heinz TF. Population inversion and giant bandgap renormalization in atomically thin WS2 layers Nature Photonics. DOI: 10.1038/nphoton.2015.104  0.664
2015 Chernikov A, Ruppert C, Hill HM, Rigosi AF, Heinz TF. Population inversion and giant bandgap renormalization in atomically thin WS 2 layers Nature Photonics. 9: 466-470. DOI: 10.1038/Nphoton.2015.104  0.713
2014 Li Y, Ludwig J, Low T, Chernikov A, Cui X, Arefe G, Kim YD, van der Zande AM, Rigosi A, Hill HM, Kim SH, Hone J, Li Z, Smirnov D, Heinz TF. Valley splitting and polarization by the Zeeman effect in monolayer MoSe2. Physical Review Letters. 113: 266804. PMID 25615372 DOI: 10.1103/Physrevlett.113.266804  0.754
2014 Chernikov A, Berkelbach TC, Hill HM, Rigosi A, Li Y, Aslan OB, Reichman DR, Hybertsen MS, Heinz TF. Exciton binding energy and nonhydrogenic Rydberg series in monolayer WS(2). Physical Review Letters. 113: 076802. PMID 25170725 DOI: 10.1103/Physrevlett.113.076802  0.785
2014 Li Y, Ludwig J, Low T, Chernikov A, Cui X, Arefe G, Kim YD, Van Der Zande AM, Rigosi A, Hill HM, Kim SH, Hone J, Li Z, Smirnov D, Heinz TF. Valley splitting and polarization by the zeeman effect in monolayer MoSe2 Physical Review Letters. 113. DOI: 10.1103/PhysRevLett.113.266804  0.72
2014 Chernikov A, Berkelbach TC, Hill HM, Rigosi A, Li Y, Aslan OB, Reichman DR, Hybertsen MS, Heinz TF. Exciton binding energy and nonhydrogenic Rydberg series in monolayer WS2 Physical Review Letters. 113. DOI: 10.1103/PhysRevLett.113.076802  0.741
2014 Li Y, Chernikov A, Zhang X, Rigosi A, Hill HM, Van Der Zande AM, Chenet DA, Shih EM, Hone J, Heinz TF. Measurement of the optical dielectric function of monolayer transition-metal dichalcogenides: MoS2, Mo S e2, WS2, and WS e2 Physical Review B - Condensed Matter and Materials Physics. 90. DOI: 10.1103/Physrevb.90.205422  0.77
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