| Year |
Citation |
Score |
| 2024 |
Seok Y, Jang H, Choi Y, Ko Y, Kim M, Im H, Watanabe K, Taniguchi T, Seol JH, Chee SS, Nah J, Lee K. High-Field Electron Transport and High Saturation Velocity in Multilayer Indium Selenide Transistors. Acs Nano. PMID 38451218 DOI: 10.1021/acsnano.3c11613 |
0.657 |
|
| 2022 |
Jang H, Song Y, Seok Y, Im H, Kim TH, Lee JH, Kim YH, Lee K. Zero power infrared sensing in 2D/3D-assembled heterogeneous graphene/In/InSe/Au. Nanoscale. PMID 35170602 DOI: 10.1039/d1nr07884d |
0.363 |
|
| 2020 |
Chee SS, Jang H, Lee K, Ham MH. Substitutional Fluorine Doping of Large-Area Molybdenum Disulfide Monolayer Films for Flexible Inverter Device Arrays. Acs Applied Materials & Interfaces. PMID 32559366 DOI: 10.1021/Acsami.0C07824 |
0.421 |
|
| 2019 |
Chee SS, Lee J, Lee K, Ham MH. Defect-Assisted Contact Property Enhancement in a Molybdenum Disulfide Monolayer. Acs Applied Materials & Interfaces. PMID 31880145 DOI: 10.1021/Acsami.9B19681 |
0.386 |
|
| 2019 |
Park D, Kim M, Lee S, Yoon I, Lee K, Lee MH, Nah J. Light-Permeable Air Filter with Self-Polarized Nylon-11 Nanofibers for Enhanced Trapping of Particulate Matters Advanced Materials Interfaces. 6: 1801832. DOI: 10.1002/Admi.201801832 |
0.569 |
|
| 2018 |
Lee K, Liu ES, Watanabe K, Taniguchi T, Nah J. Interface States in Bilayer Graphene Encapsulated by Hexagonal Boron Nitride. Acs Applied Materials & Interfaces. PMID 30430825 DOI: 10.1021/Acsami.8B16625 |
0.805 |
|
| 2017 |
Lee K, Jung J, Fallahazad B, Tutuc E. Transport spectroscopy in bilayer graphene using double layer heterostructures 2d Materials. 4: 035018. DOI: 10.1088/2053-1583/AA7BCF |
0.804 |
|
| 2016 |
Lee K, Xue J, Dillen DC, Watanabe K, Taniguchi T, Tutuc E. Giant Frictional Drag in Double Bilayer Graphene Heterostructures. Physical Review Letters. 117: 046803. PMID 27494492 DOI: 10.1103/Physrevlett.117.046803 |
0.803 |
|
| 2016 |
Gearba RI, Kim M, Mueller KM, Veneman PA, Lee K, Holliday BJ, Chan CK, Chelikowsky JR, Tutuc E, Stevenson KJ. Atomically Resolved Elucidation of the Electrochemical Covalent Molecular Grafting Mechanism of Single Layer Graphene Advanced Materials Interfaces. 3. DOI: 10.1002/Admi.201600196 |
0.766 |
|
| 2015 |
Kim K, Larentis S, Fallahazad B, Lee K, Xue J, Dillen DC, Corbet CM, Tutuc E. Band Alignment in WSe2-Graphene Heterostructures. Acs Nano. 9: 4527-32. PMID 25768037 DOI: 10.1021/Acsnano.5B01114 |
0.746 |
|
| 2015 |
Fallahazad B, Lee K, Kang S, Xue J, Larentis S, Corbet C, Kim K, Movva HC, Taniguchi T, Watanabe K, Register LF, Banerjee SK, Tutuc E. Gate-tunable resonant tunneling in double bilayer graphene heterostructures. Nano Letters. 15: 428-33. PMID 25436861 DOI: 10.1021/Nl503756Y |
0.744 |
|
| 2015 |
Kang S, Fallahazad B, Lee K, Movva H, Kim K, Corbet CM, Taniguchi T, Watanabe K, Colombo L, Register LF, Tutuc E, Banerjee SK. Bilayer Graphene-Hexagonal Boron Nitride Heterostructure Negative Differential Resistance Interlayer Tunnel FET Ieee Electron Device Letters. 36: 405-407. DOI: 10.1109/Led.2015.2398737 |
0.759 |
|
| 2014 |
Lee K, Fallahazad B, Xue J, Dillen DC, Kim K, Taniguchi T, Watanabe K, Tutuc E. Bilayer graphene. Chemical potential and quantum Hall ferromagnetism in bilayer graphene. Science (New York, N.Y.). 345: 58-61. PMID 24994645 DOI: 10.1126/Science.1251003 |
0.784 |
|
| 2013 |
Lee K, Fallahazad B, Min H, Tutuc E. Transport Gap in Dual-Gated Graphene Bilayers Using Oxides as Dielectrics Ieee Transactions On Electron Devices. 60: 103-108. DOI: 10.1109/Ted.2012.2228203 |
0.824 |
|
| 2012 |
Fallahazad B, Hao Y, Lee K, Kim S, Ruoff RS, Tutuc E. Quantum Hall effect in Bernal stacked and twisted bilayer graphene grown on Cu by chemical vapor deposition Physical Review B. 85. DOI: 10.1103/Physrevb.85.201408 |
0.819 |
|
| 2012 |
Fallahazad B, Lee K, Lian G, Kim S, Corbet CM, Ferrer DA, Colombo L, Tutuc E. Scaling of Al2O3 dielectric for graphene field-effect transistors Applied Physics Letters. 100: 093112. DOI: 10.1063/1.3689785 |
0.812 |
|
| 2011 |
Kim S, Lee K, Tutuc E. Spin-polarized to valley-polarized transition in graphene bilayers at ν=0 in high magnetic fields. Physical Review Letters. 107: 016803. PMID 21797563 DOI: 10.1103/Physrevlett.107.016803 |
0.732 |
|
| 2011 |
Lee K, Kim S, Points MS, Beechem TE, Ohta T, Tutuc E. Magnetotransport properties of quasi-free-standing epitaxial graphene bilayer on SiC: evidence for Bernal stacking. Nano Letters. 11: 3624-8. PMID 21797267 DOI: 10.1021/Nl201430A |
0.815 |
|
| 2009 |
Maeng WJ, Gu GH, Park CG, Lee K, Lee T, Kim H. HfO[sub 2]/HfO[sub x]N[sub y]/HfO[sub 2] Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer Journal of the Electrochemical Society. 156: G109. DOI: 10.1149/1.3147254 |
0.34 |
|
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