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Feng Wu - Publications

Affiliations: 
Ben Gurion University, Safed, North District, Israel 
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12 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2023 Ewing JJ, Lynsky C, Wong MS, Wu F, Chow YC, Shapturenka P, Iza M, Nakamura S, Denbaars SP, Speck JS. High external quantum efficiency (6.5%) InGaN V-defect LEDs at 600 nm on patterned sapphire substrates. Optics Express. 31: 41351-41360. PMID 38087536 DOI: 10.1364/OE.503732  0.396
2020 Khoury M, Li H, Bonef B, Mates T, Wu F, Li P, Wong MS, Zhang H, Song J, Choi J, Speck JS, Nakamura S, DenBaars SP. 560 nm InGaN micro-LEDs on low-defect-density and scalable (20-21) semipolar GaN on patterned sapphire substrates. Optics Express. 28: 18150-18159. PMID 32680016 DOI: 10.1364/Oe.387561  0.457
2019 Khoury M, Li H, Zhang H, Bonef B, Wong M, Wu F, Cohen D, De Mierry P, Vennéguès P, Speck JS, Nakamura S, DenBaars SP. Demonstration of Electrically Injected Semipolar Laser Diode Grown on Low Cost and Scalable Sapphire Substrates. Acs Applied Materials & Interfaces. PMID 31769651 DOI: 10.1021/Acsami.9B17525  0.38
2019 Saifaddin BK, Iza M, Foronda H, Almogbel A, Zollner CJ, Wu F, Alyamani A, Albadri A, Nakamura S, DenBaars SP, Speck JS. Impact of roughening density on the light extraction efficiency of thin-film flip-chip ultraviolet LEDs grown on SiC. Optics Express. 27: A1074-A1083. PMID 31510492 DOI: 10.1364/Oe.27.0A1074  0.437
2019 Kamikawa T, Gandrothula S, Araki M, Li H, Oliva VB, Wu F, Cohen D, Speck JS, Denbaars SP, Nakamura S. Realization of thin-film m-plane InGaN laser diode fabricated by epitaxial lateral overgrowth and mechanical separation from a reusable growth substrate. Optics Express. 27: 24717-24723. PMID 31510356 DOI: 10.1364/Oe.27.024717  0.406
2018 Alhassan AI, Young NG, Farrell RM, Pynn C, Wu F, Alyamani AY, Nakamura S, DenBaars SP, Speck JS. Development of high performance green c-plane III-nitride light-emitting diodes. Optics Express. 26: 5591-5601. PMID 29529761 DOI: 10.1364/Oe.26.005591  0.415
2016 Alhassan AI, Farrell RM, Saifaddin B, Mughal A, Wu F, DenBaars SP, Nakamura S, Speck JS. High luminous efficacy green light-emitting diodes with AlGaN cap layer. Optics Express. 24: 17868-17873. PMID 27505754 DOI: 10.1364/Oe.24.017868  0.392
2007 Hashimoto T, Wu F, Speck JS, Nakamura S. A GaN bulk crystal with improved structural quality grown by the ammonothermal method. Nature Materials. 6: 568-71. PMID 17603489 DOI: 10.1038/Nmat1955  0.447
2003 Golan Y, Fini P, Dahan D, Wu F, Zamir S, Salzman J, Speck JS. High-quality GaN on intentionally roughened c-sapphire Epj Applied Physics. 22: 11-14. DOI: 10.1051/Epjap:2003012  0.633
2003 Wu F, Zamir S, Meyler B, Salzman J, Golan Y. Microstructure of GaN grown by lateral confined epitaxy 2. GaN on patterned sapphire Journal of Electronic Materials. 32: 23-28. DOI: 10.1007/S11664-003-0248-2  0.621
2002 Zamir S, Meyler B, Salzman J, Wu F, Golan Y. Enhanced photoluminescence from GaN grown by lateral confined epitaxy Journal of Applied Physics. 91: 1191-1197. DOI: 10.1063/1.1432115  0.577
2002 Wu F, Zamir S, Meyler B, Salzman J, Golan Y. Microstructure of GaN deposited by lateral confined epitaxy on patterned Si (111) Journal of Electronic Materials. 31: 88-93. DOI: 10.1007/S11664-002-0178-4  0.616
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