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Vladimir V. Protasenko, Ph.D. - Publications

Affiliations: 
2008 University of Notre Dame, Notre Dame, IN, United States 
Area:
nanoscale materials
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38 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Encomendero J, Protasenko V, Rana F, Jena D, Xing HG. Fighting Broken Symmetry with Doping: Toward Polar Resonant Tunneling Diodes with Symmetric Characteristics Physical Review Applied. 13. DOI: 10.1103/Physrevapplied.13.034048  0.378
2019 Encomendero J, Protasenko V, Sensale-Rodriguez B, Fay P, Rana F, Jena D, Xing HG. Broken Symmetry Effects due to Polarization on Resonant Tunneling Transport in Double-Barrier Nitride Heterostructures Physical Review Applied. 11. DOI: 10.1103/Physrevapplied.11.034032  0.324
2017 Islam SM, Lee K, Verma J, Protasenko V, Rouvimov S, Bharadwaj S, (Grace) Xing H, Jena D. MBE-grown 232–270 nm deep-UV LEDs using monolayer thin binary GaN/AlN quantum heterostructures Applied Physics Letters. 110: 041108. DOI: 10.1063/1.4975068  0.475
2016 Gupta P, Rahman AA, Subramanian S, Gupta S, Thamizhavel A, Orlova T, Rouvimov S, Vishwanath S, Protasenko V, Laskar MR, Xing HG, Jena D, Bhattacharya A. Layered transition metal dichalcogenides: promising near-lattice-matched substrates for GaN growth. Scientific Reports. 6: 23708. PMID 27025461 DOI: 10.1038/Srep23708  0.346
2016 Islam SM, Protasenko V, Rouvimov S, Xing HG, Jena D. Sub-230nm deep-UV emission from GaN quantum disks in AlN grown by a modified Stranski-Krastanov mode Japanese Journal of Applied Physics. 55. DOI: 10.7567/Jjap.55.05Ff06  0.334
2015 Yan R, Fathipour S, Han Y, Song B, Xiao S, Li M, Ma N, Protasenko V, Muller DA, Jena D, Xing HG. Esaki diodes in van der Waals heterojunctions with broken-gap energy band alignment. Nano Letters. PMID 26226296 DOI: 10.1021/Acs.Nanolett.5B01792  0.354
2015 Hu Z, Nomoto K, Song B, Zhu M, Qi M, Pan M, Gao X, Protasenko V, Jena D, Xing HG. Near unity ideality factor and Shockley-Read-Hall lifetime in GaN-on-GaN p-n diodes with avalanche breakdown Applied Physics Letters. 107. DOI: 10.1063/1.4937436  0.347
2015 Qi M, Nomoto K, Zhu M, Hu Z, Zhao Y, Protasenko V, Song B, Yan X, Li G, Verma J, Bader S, Fay P, Xing HG, Jena D. High breakdown single-crystal GaN p-n diodes by molecular beam epitaxy Applied Physics Letters. 107. DOI: 10.1063/1.4936891  0.333
2015 Qi M, Li G, Protasenko V, Zhao P, Verma J, Song B, Ganguly S, Zhu M, Hu Z, Yan X, Mintairov A, Xing HG, Jena D. Dual optical marker Raman characterization of strained GaN-channels on AlN using AlN/GaN/AlN quantum wells and 15N isotopes Applied Physics Letters. 106. DOI: 10.1063/1.4906900  0.387
2015 O’Brien WA, Qi M, Yan L, Stephenson CA, Protasenko V, Xing H, Millunchick JM, Wistey MA. Self-assembled Ge QDs Formed by High-Temperature Annealing on Al(Ga)As (001) Journal of Electronic Materials. DOI: 10.1007/S11664-014-3583-6  0.384
2014 Verma JK, Protasenko VV, Islam SM, Xing H, Jena D. Boost in deep-UV electroluminescence from tunnel-injection GaN/AlN quantum dot LEDs by polarization-induced doping Proceedings of Spie - the International Society For Optical Engineering. 8986. DOI: 10.1117/12.2037132  0.482
2014 Fathipour S, Ma N, Hwang WS, Protasenko V, Vishwanath S, Xing HG, Xu H, Jena D, Appenzeller J, Seabaugh A. Exfoliated multilayer MoTe2 field-effect transistors Applied Physics Letters. 105. DOI: 10.1063/1.4901527  0.309
2014 Li G, Song B, Ganguly S, Zhu M, Wang R, Yan X, Verma J, Protasenko V, Grace Xing H, Jena D. Two-dimensional electron gases in strained quantum wells for AlN/GaN/AlN double heterostructure field-effect transistors on AlN Applied Physics Letters. 104. DOI: 10.1063/1.4875916  0.408
2014 Qi M, Stephenson CA, Protasenko V, O'Brien WA, Mintairov A, Xing H, Wistey MA. Ge quantum dots encapsulated by AlAs grown by molecular beam epitaxy on GaAs without extended defects Applied Physics Letters. 104. DOI: 10.1063/1.4866278  0.37
2014 Verma J, Islam SM, Protasenko V, Kumar Kandaswamy P, Xing H, Jena D. Tunnel-injection quantum dot deep-ultraviolet light-emitting diodes with polarization-induced doping in III-nitride heterostructures Applied Physics Letters. 104. DOI: 10.1063/1.4862064  0.483
2013 Verma J, Kandaswamy PK, Protasenko V, Verma A, Grace Xing H, Jena D. Tunnel-injection GaN quantum dot ultraviolet light-emitting diodes Applied Physics Letters. 102. DOI: 10.1063/1.4789512  0.423
2012 Sik Hwang W, Remskar M, Yan R, Protasenko V, Tahy K, Doo Chae S, Zhao P, Konar A, Xing H, Seabaugh A, Jena D. Transistors with chemically synthesized layered semiconductor WS 2 exhibiting 10 5 room temperature modulation and ambipolar behavior Applied Physics Letters. 101. DOI: 10.1063/1.4732522  0.37
2011 Verma J, Simon J, Protasenko V, Kosel T, Grace Xing H, Jena D. N-polar III-nitride quantum well light-emitting diodes with polarization-induced doping Applied Physics Letters. 99. DOI: 10.1063/1.3656707  0.429
2011 Goodman KD, Protasenko VV, Verma J, Kosel TH, Xing HG, Jena D. Green luminescence of InGaN nanowires grown on silicon substrates by molecular beam epitaxy Journal of Applied Physics. 109. DOI: 10.1063/1.3575323  0.467
2011 Goodman K, Protasenko V, Verma J, Kosel T, Xing G, Jena D. Molecular beam epitaxial growth of gallium nitride nanowires on atomic layer deposited aluminum oxide Journal of Crystal Growth. 334: 113-117. DOI: 10.1016/J.Jcrysgro.2011.08.032  0.305
2011 Jena D, Simon J, Wang A, Cao Y, Goodman K, Verma J, Ganguly S, Li G, Karda K, Protasenko V, Lian C, Kosel T, Fay P, Xing H. Polarization-engineering in group III-nitride heterostructures: New opportunities for device design Physica Status Solidi (a) Applications and Materials Science. 208: 1511-1516. DOI: 10.1002/Pssa.201001189  0.348
2010 Simon J, Protasenko V, Lian C, Xing H, Jena D. Polarization-induced hole doping in wide-band-gap uniaxial semiconductor heterostructures. Science (New York, N.Y.). 327: 60-4. PMID 20044569 DOI: 10.1126/Science.1183226  0.4
2009 Giblin J, Protasenko V, Kuno M. Wavelength Sensitivity of Single Nanowire Excitation Polarization Anisotropies Explained through a Generalized Treatment of Their Linear Absorption. Acs Nano. 3: 1979-87. PMID 19548642 DOI: 10.1021/Nn900380H  0.736
2008 Yu Y, Protasenko V, Jena D, Xing HG, Kuno M. Photocurrent polarization anisotropy of randomly oriented nanowire networks. Nano Letters. 8: 1352-7. PMID 18393472 DOI: 10.1021/Nl080028P  0.614
2008 Lan A, Giblin J, Protasenko V, Kuno M. Excitation and photoluminescence polarization anisotropy of single CdSe nanowires Applied Physics Letters. 92. DOI: 10.1063/1.2924767  0.726
2007 Protasenko V, Gordeyev S, Kuno M. Spatial and intensity modulation of nanowire emission induced by mobile charges. Journal of the American Chemical Society. 129: 13160-71. PMID 17918936 DOI: 10.1021/Ja073642W  0.618
2007 Singh A, Li X, Protasenko V, Galantai G, Kuno M, Xing HG, Jena D. Polarization-sensitive nanowire photodetectors based on solution-synthesized CdSe quantum-wire solids. Nano Letters. 7: 2999-3006. PMID 17760476 DOI: 10.1021/Nl0713023  0.657
2007 Zhou R, Chang HC, Protasenko V, Kuno M, Singh AK, Jena D, Xing H. CdSe nanowires with illumination-enhanced conductivity: Induced dipoles, dielectrophoretic assembly, and field-sensitive emission Journal of Applied Physics. 101. DOI: 10.1063/1.2714670  0.671
2006 Protasenko V, Bacinello D, Kuno M. Experimental determination of the absorption cross-section and molar extinction coefficient of CdSe and CdTe nanowires. The Journal of Physical Chemistry. B. 110: 25322-31. PMID 17165978 DOI: 10.1021/Jp066034W  0.62
2006 Margolin G, Protasenko V, Kuno M, Barkai E. Photon counting statistics for blinking CdSe-ZnS quantum dots: a Lévy walk process. The Journal of Physical Chemistry. B. 110: 19053-60. PMID 16986903 DOI: 10.1021/Jp061487M  0.563
2006 Kuno M, Ahmad O, Protasenko V, Bacinello D, Kosel TH. Solution-based straight and branched CdTe nanowires Chemistry of Materials. 18: 5722-5732. DOI: 10.1021/Cm061559M  0.614
2006 Margolin G, Protasenko V, Kuno M, Barkai E. Power-law blinking quantum dots: Stochastic and physical models Advances in Chemical Physics. 133: 327-356. DOI: 10.1002/0471790265.ch4  0.497
2005 Protasenko VV, Hull KL, Kuno M. Disorder-induced optical heterogeneity in single CdSe nanowires Advanced Materials. 17: 2942-2949. DOI: 10.1002/Adma.200501660  0.571
2004 Protasenko VV, Gallagher AC. Apertureless near-field scanning optical microscopy of single molecules Nano Letters. 4: 1329-1332. DOI: 10.1021/Nl049474C  0.394
2004 Protasenko VV, Gallagher A, Nesbitt DJ. Factors that influence confocal apertureless near-field scanning optical microscopy Optics Communications. 233: 45-56. DOI: 10.1016/J.Optcom.2004.01.004  0.538
2003 Protasenko V, Gallagher A, Labardi M, Nesbitt DJ. Enhancement and quenching of the fluorescence of single CdSe/ZnS quantum dots studied by confocal apertureless near-field scanning optical microscope Proceedings of Spie - the International Society For Optical Engineering. 5188: 254-263. DOI: 10.1117/12.504880  0.534
2002 Protasenko VV, Gallagher A, Nesbitt DJ. Fluorescence enhancement in non-contact and dynamic-force apertureless near-field scanning optical microscopy Proceedings of Spie - the International Society For Optical Engineering. 4809: 255-265. DOI: 10.1117/12.456755  0.471
2002 Protasenko VV, Kuno M, Gallagher A, Nesbitt DJ. Fluorescence of single ZnS overcoated CdSe quantum dots studied by apertureless near-field scanning optical microscopy Optics Communications. 210: 11-23. DOI: 10.1016/S0030-4018(02)01759-5  0.666
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