Year |
Citation |
Score |
2012 |
Doran C, Chen W, Alford TL, Lau SS. A study of single-crystal silicon diodes integrated on flexible substrates using conductive adhesives Applied Physics Letters. 100. DOI: 10.1063/1.3684970 |
0.506 |
|
2011 |
Chen W, Kuech TF, Lau SS. Ion-cut transfer of InP-based high electron mobility transistors Journal of the Electrochemical Society. 158. DOI: 10.1149/1.3591110 |
0.574 |
|
2011 |
Chen W, Doran C, Govea D, Alford TL, Lau SS. Stress-induced transfer of ultrathin silicon layers onto flexible substrates Electrochemical and Solid-State Letters. 14: H171-H173. DOI: 10.1149/1.3548508 |
0.558 |
|
2011 |
Vemuri RNP, Gadre MJ, Theodore ND, Chen W, Lau SS, Alford TL. Susceptor assisted microwave annealing for recrystallization and dopant activation of arsenic-implanted silicon Journal of Applied Physics. 110: 34907. DOI: 10.1063/1.3622287 |
0.505 |
|
2011 |
Chen W, Alford TL, Kuech TF, Lau SS. High electron mobility transistors on plastic flexible substrates Applied Physics Letters. 98. DOI: 10.1063/1.3593006 |
0.583 |
|
2010 |
Chen W, Chen WV, Lee K, Lau SS, Kuech TF. High quality InP layers transferred by cleavage plane assisted ion-cutting Electrochemical and Solid-State Letters. 13: H268-H270. DOI: 10.1149/1.3428748 |
0.59 |
|
2009 |
Chen W, Bandaru P, Tang CW, Lau KM, Kuech TF, Lau SS. InP Layer Transfer with Masked Implantation Electrochemical and Solid-State Letters. 12: H149. DOI: 10.1149/1.3078487 |
0.572 |
|
2009 |
Chen W, Zhang A, Chen P, Pulsifer JE, Alford TL, Kuech TF, Lau SS. Feasibility study of ion-cut InP photoconductor devices on glass substrates Applied Physics Express. 2. DOI: 10.1143/Apex.2.022201 |
0.583 |
|
2008 |
Chen W, Chen P, Pulsifer JE, Alford TL, Kuech TF, Lau SS. Integration of thin layers of single-crystalline InP with flexible substrates Applied Physics Letters. 92. DOI: 10.1063/1.2937409 |
0.569 |
|
2007 |
Chen W, Chen P, Jing Y, Lau SS, Kuech TF, Liu J, Wang X, Chu W. Double-flip transfer of indium phosphide layers via adhesive wafer bonding and ion-cutting process Applied Physics Letters. 90: 52114. DOI: 10.1063/1.2450665 |
0.596 |
|
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