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Zvonimir Z. Bandic, Ph.D. - Publications

Affiliations: 
2000 California Institute of Technology, Pasadena, CA 
Area:
Electronics and Electrical Engineering, Condensed Matter Physics
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31 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2008 Hellwig O, Moser A, Dobisz E, Bandic ZZ, Yang H, Kercher DS, Risner-Jamtgaard JD, Yaney D, Fullerton EE. Suppression of magnetic trench material in bit patterned media fabricated by blanket deposition onto prepatterned substrates Applied Physics Letters. 93. DOI: 10.1063/1.3013857  0.336
2007 Hellwig O, Berger A, Thomson T, Dobisz E, Bandic ZZ, Yang H, Kercher DS, Fullerton EE. Separating dipolar broadening from the intrinsic switching field distribution in perpendicular patterned media Applied Physics Letters. 90. DOI: 10.1063/1.2730744  0.349
2004 Bandić ZZ, Albrecht TR, Bonhote C, Katine J, Rooks M. Flexible magnetics on plastic substrates: magnetic lithography, magnetic nanostructures and other applications Mrs Proceedings. 814. DOI: 10.1557/Proc-814-I9.3  0.332
2002 Dietzel A, Berger R, Grimm H, Schug C, Bruenger WH, Dzionk C, Letzkus F, Springer R, Loeschner H, Platzgummer E, Stengl G, Anders S, Bandic ZZ, Rettner CT, Terris BD, et al. Resistless patterning of magnetic storage media using ion projection structuring Materials Research Society Symposium - Proceedings. 705: 279-289. DOI: 10.1557/Proc-705-Y3.4  0.312
2002 Dietzel A, Berger R, Grimm H, Bruenger WH, Dzionk C, Letzkus F, Springer R, Loeschner H, Platzgummer E, Stengl G, Bandic ZZ, Terris BD. Ion projection direct structuring for patterning of magnetic media Ieee Transactions On Magnetics. 38: 1952-1954. DOI: 10.1109/Tmag.2002.802846  0.317
2000 Bandić ZZ, Bridger PM, Piquette EC, McGill TC. Values of minority carrier diffusion lengths and lifetimes in GaN and their implications for bipolar devices Solid-State Electronics. 44: 221-228. DOI: 10.1016/S0038-1101(99)00227-0  0.612
1999 Bridger PM, Bandić ZZ, Piquette EC, McGill TC. Electric force microscopy of induced charges and surface potentials in GaN modified by light and strain Journal of Vacuum Science & Technology B. 17: 1750-1752. DOI: 10.1116/1.590819  0.56
1999 Piquette EC, Bridger PM, Bandić ZZ, McGill TC. Morphology, polarity, and lateral molecular beam epitaxy growth of GaN on sapphire Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 17: 1241. DOI: 10.1116/1.590730  0.6
1999 Bridger PM, Bandić ZZ, Piquette EC, McGill TC. Measurement of induced surface charges, contact potentials, and surface states in GaN by electric force microscopy Applied Physics Letters. 74: 3522-3524. DOI: 10.1063/1.124148  0.587
1999 Bandić ZZ, Bridger PM, Piquette EC, McGill TC, Vaudo RP, Phanse VM, Redwing JM. High voltage (450 V) GaN Schottky rectifiers Applied Physics Letters. 74: 1266-1268. DOI: 10.1063/1.123520  0.58
1998 Piquette EC, Bridger PM, Bandić ZZ, Mcgill TC. Growth of Iii-Nitrides by Rf-Assisted Molecular Beam Epitaxy Mrs Proceedings. 512. DOI: 10.1557/Proc-512-387  0.635
1998 Bandić ZZ, Bridger PM, Piquette EC, Beach RA, Phanse VM, Vaudo RP, Redwing J, McGill TC. Nitride Based High Power Devices: Transport Properties, Linear Defects And Goals Mrs Proceedings. 512. DOI: 10.1557/Proc-512-27  0.629
1998 Bridger PM, Bandić ZZ, Piquette EC, McGill TC. Correlation between the surface defect distribution and minority carrier transport properties in GaN Applied Physics Letters. 73: 3438-3440. DOI: 10.1063/1.122790  0.623
1998 Bandić ZZ, Bridger PM, Piquette EC, McGill TC. Electron diffusion length and lifetime in p-type GaN Applied Physics Letters. 73: 3276-3278. DOI: 10.1063/1.122743  0.603
1998 Bandić ZZ, Bridger PM, Piquette EC, McGill TC. Minority carrier diffusion length and lifetime in GaN Applied Physics Letters. 72: 3166-3168. DOI: 10.1063/1.121581  0.607
1998 Bandić ZZ, Piquette EC, McCaldin JO, McGill TC. Solid phase recrystallization of ZnS thin films on sapphire Applied Physics Letters. 72: 2862-2864. DOI: 10.1063/1.121483  0.581
1998 Bandić ZZ, Piquette EC, Bridger PM, Beach RA, Kuech TF, McGill TC. Nitride based high power devices: design and fabrication issues Solid-State Electronics. 42: 2289-2294. DOI: 10.1016/S0038-1101(98)00227-5  0.592
1997 Bandić ZZ, Piquette EC, Bridger PM, Kuech TF, Mcgill TC. Design And Fabrication Of Nitride Based High Power Devices Mrs Proceedings. 483: 399. DOI: 10.1557/Proc-483-399  0.597
1997 Piquette EC, Bandic ZZ, McGill TC. Experimental study of sputter deposited contacts to gallium nitride Materials Research Society Symposium - Proceedings. 482: 1089-1094. DOI: 10.1557/Proc-482-1089  0.571
1997 Piquette EC, Bandic ZZ, McCaldin JO, McGill TC. MBE growth and characterization of ZnS/GaN heterostructures Materials Research Society Symposium - Proceedings. 449: 385-390. DOI: 10.1557/Proc-449-385  0.607
1997 Bandic ZZ, Hauenstein RJ, O'Steen ML, McGill TC. Kinetics of nitrogen in GaAsN layers during GaAs overgrowth Materials Research Society Symposium - Proceedings. 449: 209-214. DOI: 10.1557/Proc-449-209  0.594
1997 Piquette EC, Bandić ZZ, McCaldin JO, McGill TC. Growth and characterization of light emitting ZnS/GaN heterostructures Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 15: 1148-1152. DOI: 10.1116/1.589430  0.651
1997 Bandić ZZ, McGill TC, Ikonić Z. Electronic structure of GaN stacking faults Physical Review B - Condensed Matter and Materials Physics. 56: 3564-3566. DOI: 10.1103/Physrevb.56.3564  0.496
1997 Bandic ZZ, Piquette EC, Bridger PM, Kuech TF, McGill TC. Design and fabrication of nitride based high power devices Materials Research Society Symposium - Proceedings. 483: 399-404.  0.559
1996 Perkins NR, Horton MN, Zhi D, Matyi RJ, Bandic ZZ, McGill TC, Kuech TF. Nucleation and growth of gallium nitride films on Si and sapphire substrates using buffer layers Materials Research Society Symposium - Proceedings. 423: 287-292. DOI: 10.1557/Proc-423-287  0.609
1996 Bandić ZZ. Microscopic processes during electron cyclotron resonance microwave nitrogen plasma-assisted molecular beam epitaxial growth of GaN/GaAs heterostructures: Experiments and kinetic modeling Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 14: 2948. DOI: 10.1116/1.588940  0.473
1996 Bandić ZZ, Hauenstein RJ, O'Steen ML, McGill TC. Kinetic modeling of microscopic processes during electron cyclotron resonance microwave plasma-assisted molecular beam epitaxial growth of GaN/GaAs-based heterostructures Applied Physics Letters. 68: 1510-1512. DOI: 10.1063/1.115682  0.601
1996 Perkins NR, Horton MN, Bandic ZZ, McGill TC, Kuech TF. Halide vapor phase epitaxy of gallium nitride films on sapphire and silicon substrates Materials Research Society Symposium - Proceedings. 395: 243-248.  0.574
1996 Bandic ZZ. Microscopic processes during electron cyclotron resonance microwave nitrogen plasma-assisted molecular beam epitaxial growth of GaN/GaAs heterostructures: Experiments and kinetic modeling Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 14: 2948-2951.  0.381
1995 Perkins NR, Horton MN, Bandic ZZ, McGill TC, Kuech TF. Halide Vapor Phase Epitaxy of Gallium Nitride Films on Sapphire and Silicon Substrates Mrs Proceedings. 395: 243. DOI: 10.1557/Proc-395-243  0.605
1995 Hauenstein RJ, Collins DA, O'Steen ML, Bandic ZZ, McGill TC. Anion exchange reactions and initial GaN epitaxial layer formation under nitrogen plasma exposure of a GaAs surface Materials Research Society Symposium - Proceedings. 388: 259-264.  0.555
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