| Year |
Citation |
Score |
| 2024 |
Gunder C, Maia de Oliveira F, Wangila E, Stanchu H, Zamani-Alavijeh M, Ojo S, Acharya S, Said A, Li C, Mazur YI, Yu SQ, Salamo GJ. The growth of Ge and direct bandgap GeSn on GaAs (001) by molecular beam epitaxy. Rsc Advances. 14: 1250-1257. PMID 38174282 DOI: 10.1039/d3ra06774b |
0.39 |
|
| 2023 |
Abernathy G, Ojo S, Said A, Grant JM, Zhou Y, Stanchu H, Du W, Li B, Yu SQ. Study of all-group-IV SiGeSn mid-IR lasers with dual wavelength emission. Scientific Reports. 13: 18515. PMID 37898710 DOI: 10.1038/s41598-023-45916-4 |
0.339 |
|
| 2023 |
Abernathy G, Ojo S, Stanchu H, Zhou Y, Olorunsola O, Grant J, Du W, Jheng YT, Chang GE, Li B, Yu SQ. Investigation of the cap layer for improved GeSn multiple quantum well laser performance. Optics Letters. 48: 1626-1629. PMID 37221726 DOI: 10.1364/OL.484837 |
0.3 |
|
| 2022 |
Madhusoodhanan S, Sabbar A, Tran H, Lai P, Gonzalez D, Mantooth A, Yu SQ, Chen Z. High-temperature analysis of optical coupling using AlGaAs/GaAs LEDs for high-density integrated power modules. Scientific Reports. 12: 3168. PMID 35210464 DOI: 10.1038/s41598-022-06858-5 |
0.308 |
|
| 2021 |
Grant J, Abernathy G, Olorunsola O, Ojo S, Amoah S, Wanglia E, Saha SK, Sabbar A, Du W, Alher M, Li BH, Yu SQ. Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7. Materials (Basel, Switzerland). 14. PMID 34947234 DOI: 10.3390/ma14247637 |
0.305 |
|
| 2021 |
Olorunsola O, Ojo S, Abernathy G, Zhou Y, Amoah S, Grant PC, Dou W, Margetis J, Tolle J, Kuchuk A, Du W, Li B, Zhang YH, Yu SF. Investigation of SiGeSn/GeSn/SiGeSn single quantum well with enhanced well emission. Nanotechnology. PMID 34763328 DOI: 10.1088/1361-6528/ac38e4 |
0.507 |
|
| 2020 |
Banihashemian SF, Grant JM, Sabbar A, Tran H, Olorunsola O, Ojo S, Amoah S, Mehboudi M, Yu S, Mosleh A, Naseem HA. Growth and characterization of low-temperature Si 1-x Sn x on Si using plasma enhanced chemical vapor deposition Optical Materials Express. 10: 2242-2253. DOI: 10.1364/Ome.398958 |
0.381 |
|
| 2020 |
Sabbar A, Madhusoodhanan S, Dong B, Wang J, Mantooth HA, Yu S, Chen Z. High-Temperature Spontaneous Emission Quantum Efficiency Analysis of Different InGaN MQWs for Future Power Electronics Applications Ieee Journal of Emerging and Selected Topics in Power Electronics. 1-1. DOI: 10.1109/Jestpe.2020.2995120 |
0.378 |
|
| 2020 |
Madhusoodhanan S, Sabbar A, Tran H, Dong B, Wang J, Mantooth A, Yu S, Chen Z. High-Temperature Analysis of GaN-based MQW Photodetector for Optical Galvanic Isolations in High-Density Integrated Power Modules Ieee Journal of Emerging and Selected Topics in Power Electronics. 1-1. DOI: 10.1109/Jestpe.2020.2974788 |
0.34 |
|
| 2020 |
Sabbar A, Madhusoodhanan S, Al-Kabi S, Dong B, Wang J, Atcitty S, Kaplar RJ, Ding D, Mantooth HA, Yu S, Chen Z. Systematic Investigation of Spontaneous Emission Quantum Efficiency Drop up to 800 K for Future Power Electronics Applications Ieee Journal of Emerging and Selected Topics in Power Electronics. 8: 845-853. DOI: 10.1109/Jestpe.2018.2882775 |
0.418 |
|
| 2020 |
Stanchu HV, Kuchuk AV, Mazur YI, Margetis J, Tolle J, Yu S, Salamo GJ. Strain suppressed Sn incorporation in GeSn epitaxially grown on Ge/Si(001) substrate Applied Physics Letters. 116: 232101. DOI: 10.1063/5.0011842 |
0.383 |
|
| 2020 |
Saha SK, Kumar R, Kuchuk A, Stanchu H, Mazur YI, Yu S, Salamo GJ. GaAs epitaxial growth on R-plane sapphire substrate Journal of Crystal Growth. 548: 125848. DOI: 10.1016/J.Jcrysgro.2020.125848 |
0.361 |
|
| 2020 |
Sabbar A, Grant JM, Grant PC, Dou W, Alharthi B, Li B, Yurtsever F, Ghetmiri SA, Mortazavi M, Naseem HA, Yu S, Mosleh A, Chen Z. Growth and Characterization of SiGe on c-Plane Sapphire Using a Chemical Vapor Deposition System Journal of Electronic Materials. 49: 4809-4815. DOI: 10.1007/S11664-020-08169-9 |
0.372 |
|
| 2019 |
Sabbar A, Madhusoodhanan S, Al-Kabi S, Dong B, Wang J, Atcitty S, Kaplar R, Ding D, Mantooth A, Yu SQ, Chen Z. High Temperature and Power Dependent Photoluminescence Analysis on Commercial Lighting and Display LED Materials for Future Power Electronic Modules. Scientific Reports. 9: 16758. PMID 31728031 DOI: 10.1038/S41598-019-52126-4 |
0.406 |
|
| 2019 |
Eales TD, Marko IP, Schulz S, O'Halloran E, Ghetmiri S, Du W, Zhou Y, Yu SQ, Margetis J, Tolle J, O'Reilly EP, Sweeney SJ. GeSn alloys: Consequences of band mixing effects for the evolution of the band gap Γ-character with Sn concentration. Scientific Reports. 9: 14077. PMID 31575881 DOI: 10.1038/S41598-019-50349-Z |
0.309 |
|
| 2019 |
Du W, Thai QM, Chrétien J, Bertrand M, Casiez L, Zhou Y, Margetis J, Pauc N, Chelnokov A, Reboud V, Calvo V, Tolle J, Li B, Yu S. Study of Si-Based GeSn Optically Pumped Lasers With Micro-Disk and Ridge Waveguide Structures Frontiers in Physics. 7. DOI: 10.3389/Fphy.2019.00147 |
0.398 |
|
| 2019 |
Tran H, Littlejohns CG, Thomson DJ, Pham T, Ghetmiri A, Mosleh A, Margetis J, Tolle J, Mashanovich GZ, Du W, Li B, Mortazavi M, Yu S. Study of GeSn Mid-infrared Photodetectors for High Frequency Applications Frontiers in Materials. 6. DOI: 10.3389/Fmats.2019.00278 |
0.321 |
|
| 2019 |
Madhusoodhanan S, Sabbar A, Al-Kabi S, Atcitty S, Kaplar R, Dong B, Wang J, Yu S, Chen Z. High-Temperature Optical Characterization of Wide Band Gap Light Emitting Diodes and Photodiodes for Future Power Module Application Advances in Science, Technology and Engineering Systems Journal. 4: 17-22. DOI: 10.25046/Aj040203 |
0.358 |
|
| 2019 |
Grant PC, Dou W, Alharthi B, Grant JM, Tran H, Abernathy G, Mosleh A, Du W, Li B, Mortazavi M, Naseem HA, Yu S. UHV-CVD growth of high quality GeSn using SnCl4: from material growth development to prototype devices Optical Materials Express. 9: 3277-3291. DOI: 10.1364/Ome.9.003277 |
0.465 |
|
| 2019 |
Margetis J, Yu S, Li B, Tolle J. Chemistry and kinetics governing hydride/chloride chemical vapor deposition of epitaxial Ge1−xSnx Journal of Vacuum Science and Technology. 37: 21508. DOI: 10.1116/1.5055620 |
0.426 |
|
| 2019 |
Madhusoodhanan S, Sabbar A, Atcitty S, Kaplar R, Mantooth A, Yu S, Chen Z. High-Temperature Analysis of GaN-based Blue LEDs for Future Power Electronic Applications Ieee Journal of Emerging and Selected Topics in Power Electronics. 1-1. DOI: 10.1109/Jestpe.2019.2945166 |
0.419 |
|
| 2019 |
Tran H, Pham T, Margetis J, Zhou Y, Dou W, Grant PC, Grant JM, Al-Kabi S, Sun G, Soref RA, Tolle J, Zhang Y, Du W, Li B, Mortazavi M, ... Yu S, et al. Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications Acs Photonics. 6: 2807-2815. DOI: 10.1021/Acsphotonics.9B00845 |
0.53 |
|
| 2019 |
Zhou Y, Dou W, Du W, Ojo S, Tran H, Ghetmiri SA, Liu J, Sun G, Soref R, Margetis J, Tolle J, Li B, Chen Z, Mortazavi M, Yu S. Optically Pumped GeSn Lasers Operating at 270 K with Broad Waveguide Structures on Si Acs Photonics. 6: 1434-1441. DOI: 10.1021/Acsphotonics.9B00030 |
0.435 |
|
| 2019 |
Saha SK, Kumar R, Kuchuk A, Alavijeh MZ, Maidaniuk Y, Mazur YI, Yu S, Salamo GJ. Crystalline GaAs Thin Film Growth on a c-Plane Sapphire Substrate Crystal Growth & Design. 19: 5088-5096. DOI: 10.1021/Acs.Cgd.9B00448 |
0.412 |
|
| 2019 |
Alharthi B, Dou W, Grant PC, Grant JM, Morgan T, Mosleh A, Du W, Li B, Mortazavi M, Naseem H, Yu S. Low temperature epitaxy of high-quality Ge buffer using plasma enhancement via UHV-CVD system for photonic device applications Applied Surface Science. 481: 246-254. DOI: 10.1016/J.Apsusc.2019.03.062 |
0.468 |
|
| 2018 |
Dou W, Zhou Y, Margetis J, Ghetmiri SA, Al-Kabi S, Du W, Liu J, Sun G, Soref RA, Tolle J, Li B, Mortazavi M, Yu SQ. Optically pumped lasing at 3 μm from compositionally graded GeSn with tin up to 22.3. Optics Letters. 43: 4558-4561. PMID 30272682 DOI: 10.1364/Ol.43.004558 |
0.38 |
|
| 2018 |
Grant P, Margetis J, Du W, Zhou Y, Dou W, Abernathy G, Kuchuk AV, Li B, Tolle J, Liu J, Sun G, Soref R, Mortazavi M, Yu SF. Study of direct bandgap type-I GeSn/GeSn double quantum well with improved carrier confinement. Nanotechnology. PMID 30191884 DOI: 10.1088/1361-6528/Aadfaa |
0.418 |
|
| 2018 |
Dou W, Benamara M, Mosleh A, Margetis J, Grant P, Zhou Y, Al-Kabi S, Du W, Tolle J, Li B, Mortazavi M, Yu SQ. Investigation of GeSn Strain Relaxation and Spontaneous Composition Gradient for Low-Defect and High-Sn Alloy Growth. Scientific Reports. 8: 5640. PMID 29618825 DOI: 10.1038/S41598-018-24018-6 |
0.403 |
|
| 2018 |
Dou W, Alharthi B, Grant PC, Grant JM, Mosleh A, Tran H, Du W, Mortazavi M, Li B, Naseem H, Yu S. Crystalline GeSn growth by plasma enhanced chemical vapor deposition Optical Materials Express. 8: 3220-3229. DOI: 10.1364/Ome.8.003220 |
0.433 |
|
| 2018 |
Margetis J, Zhou Y, Dou W, Grant PC, Alharthi B, Du W, Wadsworth A, Guo Q, Tran H, Ojo S, Abernathy G, Mosleh A, Ghetmiri SA, Thompson GB, Liu J, ... ... Yu S, et al. All group-IV SiGeSn/GeSn/SiGeSn QW laser on Si operating up to 90 K Applied Physics Letters. 113: 221104. DOI: 10.1063/1.5052563 |
0.394 |
|
| 2018 |
Tran H, Pham T, Du W, Zhang Y, Grant PC, Grant JM, Sun G, Soref RA, Margetis J, Tolle J, Li B, Mortazavi M, Yu S. High performance Ge0.89Sn0.11 photodiodes for low-cost shortwave infrared imaging Journal of Applied Physics. 124: 13101. DOI: 10.1063/1.5020510 |
0.43 |
|
| 2018 |
Grant PC, Margetis J, Zhou Y, Dou W, Abernathy G, Kuchuk A, Du W, Li B, Tolle J, Liu J, Sun G, Soref RA, Mortazavi M, Yu S. Direct bandgap type-I GeSn/GeSn quantum well on a GeSn- and Ge- buffered Si substrate Aip Advances. 8: 25104. DOI: 10.1063/1.5020035 |
0.443 |
|
| 2018 |
Zhang Y, Wu Y, Wang X, Ying L, Kumar R, Yu Z, Fossum ER, Liu J, Salamo GJ, Yu S. Detecting Single Photons Using Capacitive Coupling of Single Quantum Dots Acs Photonics. 5: 2008-2021. DOI: 10.1021/Acsphotonics.7B01515 |
0.338 |
|
| 2018 |
Alharthi B, Grant JM, Dou W, Grant PC, Mosleh A, Du W, Mortazavi M, Li B, Naseem H, Yu S. Heteroepitaxial Growth of Germanium-on-Silicon Using Ultrahigh-Vacuum Chemical Vapor Deposition with RF Plasma Enhancement Journal of Electronic Materials. 47: 4561-4570. DOI: 10.1007/S11664-018-6315-5 |
0.461 |
|
| 2018 |
Alahmad H, Mosleh A, Alher M, Banihashemian SF, Ghetmiri SA, Al-Kabi S, Du W, Li B, Yu S, Naseem HA. GePb Alloy Growth Using Layer Inversion Method Journal of Electronic Materials. 47: 3733-3740. DOI: 10.1007/S11664-018-6233-6 |
0.415 |
|
| 2017 |
Zhang Y, Wu Y, Wang X, Fossum ER, Kumar R, Liu J, Salamo G, Yu SQ. Non-avalanche single photon detection without carrier transit-time delay through quantum capacitive coupling. Optics Express. 25: 26508-26518. PMID 29092140 DOI: 10.1364/Oe.25.026508 |
0.337 |
|
| 2017 |
Ghetmiri SA, Zhou Y, Margetis J, Al-Kabi S, Dou W, Mosleh A, Du W, Kuchuk A, Liu J, Sun G, Soref RA, Tolle J, Naseem HA, Li B, Mortazavi M, ... Yu SQ, et al. Study of a SiGeSn/GeSn/SiGeSn structure toward direct bandgap type-I quantum well for all group-IV optoelectronics. Optics Letters. 42: 387-390. PMID 28146483 DOI: 10.1364/Ol.42.000387 |
0.426 |
|
| 2017 |
Alharthi B, Margetis J, Tran H, Al-kabi S, Dou W, Ghetmiri SA, Mosleh A, Tolle J, Du W, Mortazavi M, Li B, Naseem H, Yu S. Study of material and optical properties of Si_xGe_1-x-ySn_y alloys for Si-based optoelectronic device applications Optical Materials Express. 7: 3517. DOI: 10.1364/Ome.7.003517 |
0.46 |
|
| 2017 |
Du W, Ghetmiri S, Al-Kabi S, Mosleh A, Pham T, Zhou Y, Tran H, Sun G, Soref R, Margetis J, Tolle J, Li B, Mortazavi M, Naseem H, Yu S. Silicon-based Ge0.89Sn0.11 photodetector and light emitter towards mid-infrared applications Proceedings of Spie. 10108: 1010813. DOI: 10.1117/12.2253067 |
0.491 |
|
| 2017 |
Eales TD, Marko IP, Ghetmiri SA, Du W, Zhou Y, Yu S, Margetis J, Tolle J, Schulz S, O’Halloran E, O'Reilly EP, Sweeney SJ. New experimental evidence for nature of the band gap of GeSn alloys (Conference Presentation) Proceedings of Spie. 10108. DOI: 10.1117/12.2252724 |
0.319 |
|
| 2017 |
Grant PC, Dou W, Alharthi B, Grant JM, Mosleh A, Du W, Li B, Mortazavi M, Naseem HA, Yu S. Comparison study of the low temperature growth of dilute GeSn and Ge Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 35: 61204. DOI: 10.1116/1.4990773 |
0.403 |
|
| 2017 |
Margetis J, Yu S, Bhargava N, Li B, Du W, Tolle J. Strain engineering in epitaxial Ge1−xSnx: a path towards low-defect and high Sn-content layers Semiconductor Science and Technology. 32: 124006. DOI: 10.1088/1361-6641/Aa7Fc7 |
0.322 |
|
| 2017 |
Du W, Ghetmiri SA, Margetis J, Al-Kabi S, Zhou Y, Liu J, Sun G, Soref RA, Tolle J, Li B, Mortazavi M, Yu S. Investigation of optical transitions in a SiGeSn/GeSn/SiGeSn single quantum well structure Journal of Applied Physics. 122: 123102. DOI: 10.1063/1.4986341 |
0.428 |
|
| 2017 |
Margetis J, Al-Kabi S, Du W, Dou W, Zhou Y, Pham T, Grant P, Ghetmiri S, Mosleh A, Li B, Liu J, Sun G, Soref R, Tolle J, Mortazavi M, ... Yu S, et al. Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K Acs Photonics. DOI: 10.1021/Acsphotonics.7B00938 |
0.465 |
|
| 2017 |
Margetis J, Mosleh A, Ghetmiri SA, Al-Kabi S, Dou W, Du W, Bhargava N, Yu S, Profijt H, Kohen D, Loo R, Vohra A, Tolle J. Fundamentals of Ge1−xSnx and SiyGe1−x-ySnx RPCVD epitaxy Materials Science in Semiconductor Processing. 70: 38-43. DOI: 10.1016/J.Mssp.2016.12.024 |
0.381 |
|
| 2016 |
Pham T, Du W, Tran H, Margetis J, Tolle J, Sun G, Soref RA, Naseem HA, Li B, Yu SQ. Systematic study of Si-based GeSn photodiodes with 2.6 µm detector cutoff for short-wave infrared detection. Optics Express. 24: 4519-4531. PMID 29092279 DOI: 10.1364/Oe.24.004519 |
0.445 |
|
| 2016 |
Mosleh A, Alher M, Du W, Cousar LC, Ghetmiri SA, Al-Kabi S, Dou W, Grant PC, Sun G, Soref RA, Li B, Naseem HA, Yu SQ. SiyGe1-x-ySnx films grown on Si using a cold-wall ultrahigh-vacuum chemical vapor deposition system Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 34. DOI: 10.1116/1.4936892 |
0.425 |
|
| 2016 |
Al-Kabi S, Ghetmiri SA, Margetis J, Pham T, Zhou Y, Dou W, Collier B, Quinde R, Du W, Mosleh A, Liu J, Sun G, Soref RA, Tolle J, Li B, ... ... Yu S, et al. An optically pumped 2.5 μm GeSn laser on Si operating at 110 K Applied Physics Letters. 109: 171105. DOI: 10.1063/1.4966141 |
0.416 |
|
| 2016 |
Zhou Y, Dou W, Du W, Pham T, Ghetmiri SA, Al-Kabi S, Mosleh A, Alher M, Margetis J, Tolle J, Sun G, Soref R, Li B, Mortazavi M, Naseem H, ... Yu SQ, et al. Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications Journal of Applied Physics. 120. DOI: 10.1063/1.4958337 |
0.46 |
|
| 2016 |
Tran H, Du W, Ghetmiri SA, Mosleh A, Sun G, Soref RA, Margetis J, Tolle J, Li B, Naseem HA, Yu SQ. Systematic study of Ge1-xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics Journal of Applied Physics. 119. DOI: 10.1063/1.4943652 |
0.346 |
|
| 2016 |
Dou W, Ghetmiri SA, Al-Kabi S, Mosleh A, Zhou Y, Alharthi B, du W, Margetis J, Tolle J, Kuchuk A, Benamara M, Li B, Naseem HA, Mortazavi M, Yu SQ. Structural and Optical Characteristics of GeSn Quantum Wells for Silicon-Based Mid-Infrared Optoelectronic Applications Journal of Electronic Materials. 1-8. DOI: 10.1007/S11664-016-5031-2 |
0.484 |
|
| 2016 |
Al-Kabi S, Ghetmiri SA, Margetis J, du W, Mosleh A, Dou W, Sun G, Soref RA, Tolle J, Li B, Mortazavi M, Naseem HA, Yu SQ. Study of High-Quality GeSn Alloys Grown by Chemical Vapor Deposition towards Mid-Infrared Applications Journal of Electronic Materials. 1-7. DOI: 10.1007/S11664-016-5028-X |
0.446 |
|
| 2016 |
Mosleh A, Alher M, Cousar LC, du W, Ghetmiri SA, Al-Kabi S, Dou W, Grant PC, Sun G, Soref RA, Li B, Naseem HA, Yu SQ. Buffer-Free GeSn and SiGeSn Growth on Si Substrate Using In Situ SnD4 Gas Mixing Journal of Electronic Materials. 1-8. DOI: 10.1007/S11664-016-4402-Z |
0.402 |
|
| 2015 |
Mosleh A, Alher MA, Cousar LC, Du W, Ghetmiri SA, Pham T, Grant JM, Sun G, Soref RA, Li B, Naseem HA, Yu S. Direct Growth of Ge1−xSnx Films on Si Using a Cold-Wall Ultra-High Vacuum Chemical-Vapor-Deposition System Frontiers in Materials. 2. DOI: 10.3389/Fmats.2015.00030 |
0.432 |
|
| 2015 |
Du W, Pham T, Margetis J, Tran H, Ghetmiri SA, Mosleh A, Sun G, Soref RA, Tolle J, Naseem HA, Li B, Yu SQ. Si based mid-infrared GeSn photo detectors and light emitters Proceedings of Spie - the International Society For Optical Engineering. 9555. DOI: 10.1117/12.2187540 |
0.426 |
|
| 2015 |
Pham T, Du W, Margetis J, Ghetmiri SA, Mosleh A, Sun G, Soref RA, Tolle J, Naseem HA, Li B, Yu SQ. Temperature-dependent study of Si-based GeSn photoconductors Proceedings of Spie - the International Society For Optical Engineering. 9367. DOI: 10.1117/12.2079580 |
0.391 |
|
| 2015 |
Al-Kabi S, Ghetmiri SA, Margetis J, du W, Mosleh A, Alher M, Dou W, Grant JM, Sun G, Soref RA, Tolle J, Li B, Mortazavi M, Naseem HA, Yu SQ. Optical Characterization of Si-Based Ge1−xSnx Alloys with Sn Compositions up to 12% Journal of Electronic Materials. 1-9. DOI: 10.1007/S11664-015-4283-6 |
0.418 |
|
| 2014 |
Conley BR, Mosleh A, Ghetmiri SA, Du W, Soref RA, Sun G, Margetis J, Tolle J, Naseem HA, Yu SQ. Temperature dependent spectral response and detectivity of GeSn photoconductors on silicon for short wave infrared detection. Optics Express. 22: 15639-52. PMID 24977823 DOI: 10.1364/Oe.22.015639 |
0.449 |
|
| 2014 |
Ghetmiri SA, Du W, Conley BR, Mosleh A, Nazzal A, Sun G, Soref RA, Margetis J, Tolle J, Naseem HA, Yu SQ. Shortwave-infrared photoluminescence from Ge1-xSnx thin films on silicon Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 32. DOI: 10.1116/1.4897917 |
0.431 |
|
| 2014 |
Grant PC, Fan D, Mosleh A, Yu SQ, Dorogan VG, Hawkridge ME, Mazur YI, Benamara M, Salamo GJ, Johnson SR. Rapid thermal annealing effect on GaAsBi/GaAs single quantum wells grown by molecular beam epitaxy Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 32. DOI: 10.1116/1.4868110 |
0.462 |
|
| 2014 |
Conley BR, Margetis J, Du W, Tran H, Mosleh A, Ghetmiri SA, Tolle J, Sun G, Soref R, Li B, Naseem HA, Yu SQ. Si based GeSn photoconductors with a 1.63 A/W peak responsivity and a 2.4 μ m long-wavelength cutoff Applied Physics Letters. 105. DOI: 10.1063/1.4903540 |
0.396 |
|
| 2014 |
Ghetmiri SA, Du W, Margetis J, Mosleh A, Cousar L, Conley BR, Domulevicz L, Nazzal A, Sun G, Soref RA, Tolle J, Li B, Naseem HA, Yu SQ. Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence Applied Physics Letters. 105. DOI: 10.1063/1.4898597 |
0.481 |
|
| 2014 |
Du W, Ghetmiri SA, Conley BR, Mosleh A, Nazzal A, Soref RA, Sun G, Tolle J, Margetis J, Naseem HA, Yu SQ. Competition of optical transitions between direct and indirect bandgaps in Ge1-xSnx Applied Physics Letters. 105. DOI: 10.1063/1.4892302 |
0.415 |
|
| 2014 |
Du W, Zhou Y, Ghetmiri SA, Mosleh A, Conley BR, Nazzal A, Soref RA, Sun G, Tolle J, Margetis J, Naseem HA, Yu SQ. Room-temperature electroluminescence from Ge/Ge1-xSn x/Ge diodes on Si substrates Applied Physics Letters. 104. DOI: 10.1063/1.4884380 |
0.456 |
|
| 2014 |
Mosleh A, Ghetmiri SA, Conley BR, Hawkridge M, Benamara M, Nazzal A, Tolle J, Yu SQ, Naseem HA. Material characterization of Ge1-x Sn x alloys grown by a commercial CVD system for optoelectronic device applications Journal of Electronic Materials. 43: 938-946. DOI: 10.1007/S11664-014-3089-2 |
0.447 |
|
| 2013 |
Fan D, Grant PC, Yu SQ, Dorogan VG, Hu X, Zeng Z, Li C, Hawkridge ME, Benamara M, Mazur YI, Salamo GJ, Johnson SR, Wang ZM. MBE grown GaAsBi/GaAs double quantum well separate confinement heterostructures Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 31. DOI: 10.1116/1.4792518 |
0.427 |
|
| 2013 |
Zeng Z, Morgan TA, Fan D, Li C, Hirono Y, Hu X, Zhao Y, Lee JS, Wang J, Wang ZM, Yu S, Hawkridge ME, Benamara M, Salamo GJ. Molecular beam epitaxial growth of Bi2Te3 and Sb 2Te3 topological insulators on GaAs (111) substrates: A potential route to fabricate topological insulator p-n junction Aip Advances. 3. DOI: 10.1063/1.4815972 |
0.4 |
|
| 2013 |
Fan D, Zeng Z, Dorogan VG, Hirono Y, Li C, Mazur YI, Yu SQ, Johnson SR, Wang ZM, Salamo GJ. Bismuth surfactant mediated growth of InAs quantum dots by molecular beam epitaxy Journal of Materials Science: Materials in Electronics. 24: 1635-1639. DOI: 10.1007/S10854-012-0987-Z |
0.382 |
|
| 2012 |
Fan D, Zeng Z, Hu X, Dorogan VG, Li C, Benamara M, Hawkridge ME, Mazur YI, Yu SQ, Johnson SR, Wang ZM, Salamo GJ. Molecular beam epitaxy growth of GaAsBi/GaAs/AlGaAs separate confinement heterostructures Applied Physics Letters. 101. DOI: 10.1063/1.4764556 |
0.446 |
|
| 2010 |
Li Z, Wu J, Wang ZM, Fan D, Guo A, Li S, Yu SQ, Manasreh O, Salamo GJ. InGaAs Quantum Well Grown on High-Index Surfaces for Superluminescent Diode Applications. Nanoscale Research Letters. 5: 1079-84. PMID 20672090 DOI: 10.1007/S11671-010-9605-2 |
0.441 |
|
| 2010 |
Hossain N, Hild K, Jin S, Sweeney SJ, Yu SQ, Johnson SR, Ding D, Zhang YH. Role of growth temperature on the physical characteristics of GaAsSb/GaAs QW lasers 2010 23rd Annual Meeting of the Ieee Photonics Society, Photinics 2010. 59-60. DOI: 10.1109/Photonics.2010.5698756 |
0.578 |
|
| 2007 |
Hild K, Sweeney SJ, Marko IP, Jin SR, Johnson SR, Chaparro SA, Yu S, Zhang YH. Temperature and pressure dependence of carrier recombination processes in GaAsSb/GaAs quantum well lasers Physica Status Solidi (B) Basic Research. 244: 197-202. DOI: 10.1002/Pssb.200672571 |
0.563 |
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| Show low-probability matches. |