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Joe C. Campbell - Publications

Affiliations: 
Electrical Engineering University of Texas at Austin, Austin, Texas, U.S.A. 
Area:
Electronics and Electrical Engineering
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397 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2022 Shen Y, Xue X, Jones AH, Peng Y, Gao J, Tzu TC, Konkol M, Campbell JC. Near 100% external quantum efficiency 1550-nm broad spectrum photodetector. Optics Express. 30: 3047-3054. PMID 35209431 DOI: 10.1364/OE.447091  0.322
2020 Peng Y, Sun K, Shen Y, Beling A, Campbell JC. Photonic generation of pulsed microwave signals in the X-, Ku- and K-band. Optics Express. 28: 28563-28572. PMID 32988123 DOI: 10.1364/Oe.399102  0.334
2020 Chen D, Sun K, Jones AH, Campbell JC. Efficient absorption enhancement approaches for AlInAsSb avalanche photodiodes for 2-μm applications. Optics Express. 28: 24379-24388. PMID 32906979 DOI: 10.1364/Oe.399022  0.398
2020 Yuan Y, Huang Z, Wang B, Sorin WV, Zeng X, Liang D, Fiorentino M, Campbell JC, Beausoleil RG. 64 Gbps PAM4 Si-Ge Waveguide Avalanche Photodiodes With Excellent Temperature Stability Journal of Lightwave Technology. 38: 4857-4866. DOI: 10.1109/Jlt.2020.2996561  0.371
2020 Peng Y, Sun K, Shen Y, Beling A, Campbell JC. High-Power and High-Linearity Photodiodes at 1064 nm Journal of Lightwave Technology. 38: 4850-4856. DOI: 10.1109/Jlt.2020.2993206  0.39
2020 Fink DR, Lee S, Kodati SH, Rogers V, Ronningen TJ, Winslow M, Grein CH, Jones AH, Campbell JC, Klem JF, Krishna S. Determination of background doping polarity of unintentionally doped semiconductor layers Applied Physics Letters. 116: 072103. DOI: 10.1063/1.5142377  0.309
2020 Jones AH, March SD, Bank SR, Campbell JC. Low-noise high-temperature AlInAsSb/GaSb avalanche photodiodes for 2-μm applications Nature Photonics. 14: 559-563. DOI: 10.1038/S41566-020-0637-6  0.374
2019 Yuan Y, Li Y, Abell J, Zheng J, Sun K, Pinzone C, Campbell JC. Triple-mesa avalanche photodiodes with very low surface dark current. Optics Express. 27: 22923-22929. PMID 31510576 DOI: 10.1364/Oe.27.022923  0.338
2019 Yuan Y, Jung D, Sun K, Zheng J, Jones AH, Bowers JE, Campbell JC. III-V on silicon avalanche photodiodes by heteroepitaxy. Optics Letters. 44: 3538-3541. PMID 31305567 DOI: 10.1364/Ol.44.003538  0.432
2019 Jones AH, Rockwell A, March SD, Yuan Y, Bank SR, Campbell JC. High Gain, Low Dark Current Al 0.8 In 0.2 As 0.23 Sb 0.77 Avalanche Photodiodes Ieee Photonics Technology Letters. 31: 1948-1951. DOI: 10.1109/Lpt.2019.2950616  0.315
2019 Peng Y, Zang J, Sun K, Yang Z, Campbell JC. High-Speed and High-Power MUTC Photodiode Working at 1064 nm Ieee Photonics Technology Letters. 31: 1584-1587. DOI: 10.1109/Lpt.2019.2938658  0.373
2019 Yuan Y, Zheng J, Rockwell AK, March SD, Bank SR, Campbell JC. AlInAsSb Impact Ionization Coefficients Ieee Photonics Technology Letters. 31: 315-318. DOI: 10.1109/Lpt.2019.2894114  0.34
2019 Ferraro MS, Rabinovich WS, Mahon R, Murphy JL, Clark WR, Waters WD, Vaccaro K, Campbell JC. Position Sensing and High Bandwidth Data Communication Using Impact Ionization Engineered APD Arrays Ieee Photonics Technology Letters. 31: 58-61. DOI: 10.1109/Lpt.2018.2882886  0.319
2019 Zhao H, Naseem, Jones AH, Chao R, Ahmad Z, Campbell JC, Shi J. High-Speed Avalanche Photodiodes With Wide Dynamic Range Performance Journal of Lightwave Technology. 37: 5945-5952. DOI: 10.1109/Jlt.2019.2944098  0.421
2019 Shen Y, Jones AH, Yuan Y, Zheng J, Peng Y, VanMil B, Olver K, Sampath AV, Parker C, Opila E, Campbell JC. Near ultraviolet enhanced 4H-SiC Schottky diode Applied Physics Letters. 115: 261101. DOI: 10.1063/1.5129375  0.381
2019 Zheng J, Yuan Y, Tan Y, Peng Y, Rockwell A, Bank SR, Ghosh AW, Campbell JC. Simulations for InAlAs digital alloy avalanche photodiodes Applied Physics Letters. 115: 171106. DOI: 10.1063/1.5114918  0.558
2019 Zheng J, Jones AH, Tan Y, Rockwell AK, March S, Ahmed SZ, Dukes CA, Ghosh AW, Bank SR, Campbell JC. Characterization of band offsets in AlxIn1-xAsySb1-y alloys with varying Al composition Applied Physics Letters. 115: 122105. DOI: 10.1063/1.5107516  0.574
2019 Zheng J, Tan Y, Yuan Y, Ghosh AW, Campbell JC. Tuning of energy dispersion properties in InAlAs digital alloys Journal of Applied Physics. 125: 245702. DOI: 10.1063/1.5091694  0.556
2019 Zheng J, Tan Y, Yuan Y, Ghosh AW, Campbell JC. Strain effect on band structure of InAlAs digital alloy Journal of Applied Physics. 125: 082514. DOI: 10.1063/1.5045476  0.565
2018 Davila-Rodriguez J, Xie X, Zang J, Long CJ, Fortier TM, Leopardi H, Nakamura T, Campbell JC, Diddams SA, Quinlan F. Optimizing the linearity in high-speed photodiodes. Optics Express. 26: 30532-30545. PMID 30469951 DOI: 10.1364/Oe.26.030532  0.369
2018 Yuan Y, Zheng J, Tan Y, Peng Y, Rockwell A, Bank SR, Ghosh A, Campbell JC. Temperature dependence of the ionization coefficients of InAlAs and AlGaAs digital alloys Photonics Research. 6: 794. DOI: 10.1364/Prj.6.000794  0.58
2018 Rockwell A, Yuan Y, Jones AH, March SD, Bank SR, Campbell JC. Al0.8In0.2As0.23Sb0.77 Avalanche Photodiodes Ieee Photonics Technology Letters. 30: 1048-1051. DOI: 10.1109/Lpt.2018.2826999  0.336
2018 Zang J, Xie X, Yu Q, Yang Z, Beling A, Campbell JC. Reduction of Amplitude-to-Phase Conversion in Charge-Compensated Modified Unitraveling Carrier Photodiodes Journal of Lightwave Technology. 36: 5218-5223. DOI: 10.1109/Jlt.2018.2871882  0.375
2018 Yang Z, Yu Q, Zang J, Campbell JC, Beling A. Phase-Modulated Analog Photonic Link With a High-Power High-Linearity Photodiode Journal of Lightwave Technology. 36: 3805-3814. DOI: 10.1109/Jlt.2018.2851193  0.371
2018 Zheng J, Yuan Y, Tan Y, Peng Y, Rockwell AK, Bank SR, Ghosh AW, Campbell JC. Digital Alloy InAlAs Avalanche Photodiodes Journal of Lightwave Technology. 36: 3580-3585. DOI: 10.1109/Jlt.2018.2844114  0.574
2018 Zang J, Morgan JS, Xie X, Sun K, Li Q, Beling A, Campbell JC. InP/InGaAs Photovaractor Journal of Lightwave Technology. 36: 1661-1665. DOI: 10.1109/Jlt.2017.2785802  0.354
2018 Rockwell AK, Ren M, Woodson M, Jones AH, March SD, Tan Y, Yuan Y, Sun Y, Hool R, Maddox SJ, Lee ML, Ghosh AW, Campbell JC, Bank SR. Toward deterministic construction of low noise avalanche photodetector materials Applied Physics Letters. 113: 102106. DOI: 10.1063/1.5040592  0.622
2017 Jones AH, Yuan Y, Ren M, Maddox SJ, Bank SR, Campbell JC. AlxIn1-xAsySb1-y photodiodes with low avalanche breakdown temperature dependence. Optics Express. 25: 24340-24345. PMID 29041378 DOI: 10.1364/Oe.25.024340  0.326
2017 Shen Y, Feng S, Xie X, Zang J, Li S, Su T, Shang K, Lai W, Liu G, Ben Yoo SJ, Campbell JC. Hybrid integration of modified uni-traveling carrier photodiodes on a multi-layer silicon nitride platform using total reflection mirrors. Optics Express. 25: 9521-9527. PMID 28468334 DOI: 10.1364/Oe.25.009521  0.42
2017 Zang J, Yang Z, Xie X, Ren M, Shen Y, Carson Z, Pfister O, Beling A, Campbell JC. High Quantum Efficiency Uni-Traveling-Carrier Photodiode Ieee Photonics Technology Letters. 29: 302-305. DOI: 10.1109/Lpt.2016.2647638  0.397
2017 Li Q, Sun K, Li K, Yu Q, Runge P, Ebert W, Beling A, Campbell JC. High-Power Evanescently Coupled Waveguide MUTC Photodiode With >105-GHz Bandwidth Journal of Lightwave Technology. 35: 4752-4757. DOI: 10.1109/Jlt.2017.2759210  0.36
2017 Xie X, Zang J, Beling A, Campbell J. Characterization of Amplitude Noise to Phase Noise Conversion in Charge-Compensated Modified Unitravelling Carrier Photodiodes Journal of Lightwave Technology. 35: 1718-1724. DOI: 10.1109/Jlt.2016.2641967  0.309
2016 Sampath AV, Chen Y, Zhou Q, Enck RW, Garrett GA, Vanmil BL, Chung RB, Reed ML, Shen H, Campbell JC, Wraback M. AlGaN/SiC heterojunction ultraviolet photodiodes Materials Science Forum. 858: 1206-1209. DOI: 10.4028/Www.Scientific.Net/Msf.858.1206  0.392
2016 Xie X, Ramaswamy A, Shen Y, Yang Z, Jacob-Mitos M, Wang Y, Zang J, Norberg E, Fish G, Campbell JC, Beling A. Heterogeneously integrated waveguide-coupled photodiodes on silicon-on-diamond (SOD) Proceedings of Spie. 9974: 997406. DOI: 10.1117/12.2237851  0.424
2016 Ferraro MS, Rabinovich WS, Clark WR, Waters WD, Campbell JC, Mahon R, Vaccaro K, Krejca BD. Impact ionization engineered avalanche photodiode arrays for free space optical communication Proceedings of Spie - the International Society For Optical Engineering. 9739. DOI: 10.1117/12.2212725  0.374
2016 Ferraro MS, Rabinovich WS, Clark WR, Waters WD, Campbell JC, Mahon R, Vaccaro K, Krejca BD, D'Ambrosio P. Impact-ionization-engineered avalanche photodiode arrays for free-space optical communication Optical Engineering. 55. DOI: 10.1117/1.Oe.55.11.111609  0.37
2016 Li Q, Li K, Fu Y, Xie X, Yang Z, Beling A, Campbell JC. High-Power Flip-Chip Bonded Photodiode with 110 GHz Bandwidth Journal of Lightwave Technology. 34: 2139-2144. DOI: 10.1109/Jlt.2016.2520826  0.33
2016 Xie X, Zhou Q, Norberg E, Jacob-Mitos M, Chen Y, Yang Z, Ramaswamy A, Fish G, Campbell JC, Beling A. High-power and high-speed heterogeneously integrated waveguide-coupled photodiodes on silicon-on-insulator Journal of Lightwave Technology. 34: 73-78. DOI: 10.1109/Jlt.2015.2491258  0.401
2016 Campbell JC. Recent Advances in Avalanche Photodiodes Journal of Lightwave Technology. 34: 278-285. DOI: 10.1109/Jlt.2015.2453092  0.344
2016 Ren M, Maddox SJ, Woodson ME, Chen Y, Bank SR, Campbell JC. AlInAsSb separate absorption, charge, and multiplication avalanche photodiodes Applied Physics Letters. 108: 191108. DOI: 10.1063/1.4949335  0.368
2016 Woodson ME, Ren M, Maddox SJ, Chen Y, Bank SR, Campbell JC. Low-noise AlInAsSb avalanche photodiode Applied Physics Letters. 108. DOI: 10.1063/1.4942372  0.435
2016 Ren M, Maddox S, Chen Y, Woodson M, Campbell JC, Bank S. AlInAsSb/GaSb staircase avalanche photodiode Applied Physics Letters. 108: 081101. DOI: 10.1063/1.4942370  0.361
2016 Fortier TM, Rolland A, Quinlan F, Baynes FN, Metcalf AJ, Hati A, Ludlow AD, Hinkley N, Shimizu M, Ishibashi T, Campbell JC, Diddams SA. Optically referenced broadband electronic synthesizer with 15 digits of resolution Laser and Photonics Reviews. DOI: 10.1002/Lpor.201500307  0.33
2015 Hayat MM, Zarkesh-Ha P, El-Howayek G, Efroymson R, Campbell JC. Breaking the buildup-time limit of sensitivity in avalanche photodiodes by dynamic biasing. Optics Express. 23: 24035-41. PMID 26368495 DOI: 10.1364/Oe.23.024035  0.352
2015 Beling A, Campbell JC, Li K, Li Q, Wang Y, Woodson ME, Xie X, Yang Z. High-power photodiodes for analog applications Ieice Transactions On Electronics. 764-768. DOI: 10.1587/Transele.E98.C.764  0.376
2015 Bank S, Maddox SJ, Sun W, Nair HP, Campbell JC. Recent progress in high gain InAs avalanche photodiodes (Presentation Recording) Proceedings of Spie. 9555: 955509. DOI: 10.1117/12.2189149  0.376
2015 Chen XJ, Ren M, Chen Y, Johnson EB, Campbell JC, Christian JF. Characterization of Al0.8Ga0.2As geiger photodiode Proceedings of Spie - the International Society For Optical Engineering. 9601. DOI: 10.1117/12.2188473  0.407
2015 Li K, Xie X, Rouvalis E, Fedderwitz S, Steffan AG, Li Q, Yang Z, Beling A, Campbell JC. High-power photodetector modules for microwave photonic applications Proceedings of Spie - the International Society For Optical Engineering. 9362. DOI: 10.1117/12.2078214  0.375
2015 Li K, Xie X, Li Q, Shen Y, Woodsen ME, Yang Z, Beling A, Campbell JC. High-power photodiode integrated with coplanar patch antenna for 60-GHz applications Ieee Photonics Technology Letters. 27: 650-653. DOI: 10.1109/Lpt.2015.2389652  0.305
2015 Ren M, Zheng X, Chen Y, Chen XJ, Johnson EB, Christian JF, Campbell JC. Al0.8Ga0.2as avalanche photodiodes for single-photon detection Ieee Journal of Quantum Electronics. 51. DOI: 10.1109/Jqe.2015.2491648  0.352
2015 Beling A, Campbell JC. Heterogeneously integrated photodiodes on silicon Ieee Journal of Quantum Electronics. 51. DOI: 10.1109/Jqe.2015.2480595  0.383
2015 Xie X, Li K, Shen Y, Li Q, Zang J, Beling A, Campbell JC. Photonic generation of high-power pulsed microwave signals Journal of Lightwave Technology. 33: 3808-3814. DOI: 10.1109/Jlt.2015.2448595  0.354
2014 Sun W, Quinlan F, Fortier TM, Deschenes JD, Fu Y, Diddams SA, Campbell JC. Broadband noise limit in the photodetection of ultralow jitter optical pulses. Physical Review Letters. 113: 203901. PMID 25432042 DOI: 10.1103/Physrevlett.113.203901  0.331
2014 Quinlan F, Baynes FN, Fortier TM, Zhou Q, Cross A, Campbell JC, Diddams SA. Optical amplification and pulse interleaving for low-noise photonic microwave generation. Optics Letters. 39: 1581-4. PMID 24690843 DOI: 10.1364/Ol.39.001581  0.347
2014 Lu Z, Sun W, Zhou Q, Campbell J, Jiang X, Itzler MA. Improved sinusoidal gating with balanced InGaAs/InP Single Photon Avalanche Diodes. Optics Express. 21: 16716-21. PMID 23938523 DOI: 10.1364/Oe.21.016716  0.369
2014 Li K, Xie X, Zhou Q, Beling A, Campbell JC. High power 20-GHz photodiodes with resonant microwave circuits Ieee Photonics Technology Letters. 26: 1303-1306. DOI: 10.1109/Lpt.2014.2322496  0.367
2014 Xie X, Li K, Zhou Q, Beling A, Campbell JC. High-gain, low-noise-figure, and high-linearity analog photonic link based on a high-performance photodetector Journal of Lightwave Technology. 32: 3585-3590. DOI: 10.1109/Jlt.2014.2350261  0.394
2014 Rouvalis E, Baynes FN, Xie X, Li K, Zhou Q, Quinlan F, Fortier TM, Diddams SA, Steffan AG, Beling A, Campbell JC. High-power and high-linearity photodetector modules for microwave photonic applications Journal of Lightwave Technology. 32: 3810-3816. DOI: 10.1109/Jlt.2014.2310252  0.416
2014 Li K, Li L, Khlyabich PP, Burkhart B, Sun W, Lu Z, Thompson BC, Campbell JC. Breakdown mechanisms and reverse current-voltage characteristics of organic bulk heterojunction solar cells and photodetectors Journal of Applied Physics. 115. DOI: 10.1063/1.4883501  0.315
2014 Li L, Shen Y, Campbell JC. The impact of thermal annealing temperature on the low-frequency noise characteristics of P3HT:PCBM bulk heterojunction organic solar cells Solar Energy Materials and Solar Cells. 130: 151-155. DOI: 10.1016/J.Solmat.2014.07.009  0.344
2014 Rodak LE, Sampath AV, Gallinat CS, Smith J, Chen Y, Zhou Q, Campbell JC, Shen H, Wraback M. A III-nitride polarization enhanced electron filter for controlling the spectral response of solar-blind AlGaN/AlN/SiC photodiodes Physica Status Solidi (C) Current Topics in Solid State Physics. 11: 782-785. DOI: 10.1002/Pssc.201300684  0.354
2013 Beling A, Cross AS, Piels M, Peters J, Zhou Q, Bowers JE, Campbell JC. InP-based waveguide photodiodes heterogeneously integrated on silicon-on-insulator for photonic microwave generation. Optics Express. 21: 25901-6. PMID 24216816 DOI: 10.1364/Oe.21.025901  0.423
2013 Fortier TM, Quinlan F, Hati A, Nelson C, Taylor JA, Fu Y, Campbell J, Diddams SA. Photonic microwave generation with high-power photodiodes. Optics Letters. 38: 1712-4. PMID 23938920 DOI: 10.1364/Ol.38.001712  0.373
2013 Cross AS, Zhou Q, Beling A, Fu Y, Campbell JC. High-power flip-chip mounted photodiode array. Optics Express. 21: 9967-73. PMID 23609702 DOI: 10.1364/Oe.21.009967  0.366
2013 Lu Z, Sun W, Campbell J, Jiang X, Itzler MA. Balanced detection in single photon counting Proceedings of Spie. 8727. DOI: 10.1117/12.2017642  0.319
2013 Zhou Q, Cross AS, Beling A, Fu Y, Lu Z, Campbell JC. High-power V-band InGaAs/InP photodiodes Ieee Photonics Technology Letters. 25: 907-909. DOI: 10.1109/Lpt.2013.2253766  0.405
2013 Lu Z, Sun W, Campbell JC, Jiang X, Itzler MA. Pulsed Gating With Balanced InGaAs/InP Single Photon Avalanche Diodes Ieee Journal of Quantum Electronics. 49: 485-490. DOI: 10.1109/Jqe.2013.2253762  0.331
2013 Sun W, Lu Z, Zheng X, Campbell JC, Maddox SJ, Nair HP, Bank SR. High-Gain InAs avalanche photodiodes Ieee Journal of Quantum Electronics. 49: 154-161. DOI: 10.1109/Jqe.2012.2233462  0.363
2013 Lu Z, Sun W, Campbell JC, Jiang X, Itzler MA. Corrections to “Common-Mode Cancellation in Sinusoidal Gating With Balanced InGaAs/InP Single Photon Avalanche Diodes” [Dec 12 1505-1511] Ieee Journal of Quantum Electronics. 49: 59-59. DOI: 10.1109/Jqe.2012.2231259  0.309
2013 Zhou Q, Cross AS, Fu Y, Beling A, Foley BM, Hopkins P, Campbell JC. Balanced InP/InGaAs photodiodes with 1.5-W output power Ieee Photonics Journal. 5. DOI: 10.1109/Jphot.2013.2262672  0.349
2013 Rodak LE, Sampath AV, Gallinat CS, Chen Y, Zhou Q, Campbell JC, Shen H, Wraback M. Solar-blind AlxGa1-xN/AlN/SiC photodiodes with a polarization-induced electron filter Applied Physics Letters. 103. DOI: 10.1063/1.4818551  0.382
2013 Sun W, Fu Y, Lu Z, Campbell J. Study of bandwidth enhancement and non-linear behavior in avalanche photodiodes under high power condition Journal of Applied Physics. 113: 044509. DOI: 10.1063/1.4788694  0.34
2013 Sampath AV, Rodak LE, Chen Y, Zhou Q, Campbell JC, Shen H, Wraback M. High quantum efficiency deep ultraviolet 4HsiC photodetectors Electronics Letters. 49: 1629-1630. DOI: 10.1049/El.2013.2889  0.381
2013 Li K, Khlyabich PP, Li L, Burkhart B, Thompson BC, Campbell JC. Influence of exciton diffusion and charge-transfer state dissociation efficiency on the short-circuit current densities in semi-random donor/acceptor polymer: Fullerene solar cells Journal of Physical Chemistry C. 117: 6940-6948. DOI: 10.1021/Jp311930M  0.302
2012 Campbell JC. Coupling of fibers to Ti-diffused LiNbO(3) waveguides by butt-joining. Applied Optics. 18: 2037-40. PMID 20212598 DOI: 10.1364/Ao.18.002037  0.305
2012 Campbell JC. Tapered waveguides for guided wave optics. Applied Optics. 18: 900-2. PMID 20208841 DOI: 10.1364/Ao.18.000900  0.325
2012 Sarathy J, Diaz DC, Campbell JC. Crystallographically limited submicrometer gratings in (100) and (211) silicon. Optics Letters. 20: 1216-8. PMID 19859477 DOI: 10.1364/Ol.20.001216  0.349
2012 Sarathy J, Diaz DC, Hartin OL, Campbell JC. Characteristics of crystallographic gratings. Optics Letters. 20: 228-30. PMID 19859143 DOI: 10.1364/Ol.20.000228  0.34
2012 Lu Z, Zheng X, Sun W, Campbell J, Jiang X, Itzler MA. Characterization of sinusoidal gating of InGaAs/InP single photon avalanche diodes Proceedings of Spie. 8375: 837510. DOI: 10.1117/12.921033  0.394
2012 Bai X, Yuan P, McDonald P, Boisvert J, Chang J, Woo R, Labios E, Sudharsanan R, Krainak M, Yang G, Sun X, Lu W, McIntosh D, Zhou Q, Campbell J. 16 channel GHz low noise SWIR photoreceivers Proceedings of Spie - the International Society For Optical Engineering. 8353. DOI: 10.1117/12.919434  0.52
2012 Bai X, Yuan P, McDonald P, Boisvert J, Chang J, Sudharsanan R, Krainak M, Yang G, Sun X, Lu W, Lu Z, Zhou Q, Sun W, Campbell J. Development of low excess noise SWIR APDs Proceedings of Spie - the International Society For Optical Engineering. 8353. DOI: 10.1117/12.919397  0.528
2012 Sampath AV, Enck RW, Gallinat CS, Shen H, Wraback M, Zhou Q, McIntosh D, Campbell JC. III-nitride/SiC avalanche photodetectors for enabling compact biological agent identification and detection Proceedings of Spie - the International Society For Optical Engineering. 8376. DOI: 10.1117/12.918866  0.429
2012 Lu Z, Sun W, Zheng X, Campbell J, Jiang X, Itzler MA. Balanced InGaAs/InP avalanche photodiodes for single photon detection Proceedings of Spie. 8460. DOI: 10.1117/12.2000154  0.387
2012 Campbell JC, Sun W, Lu Z, Itzler MA, Jiang X. Common-mode cancellation in sinusoidal gating with balanced InGaAs/InP single photon avalanche diodes Ieee Journal of Quantum Electronics. 48: 1505-1511. DOI: 10.1109/Jqe.2012.2223200  0.382
2012 Cervantes-González JC, Ahn D, Zheng X, Banerjee SK, Jacome AT, Campbell JC, Zaldivar-Huerta IE. Germanium metal-semiconductor-metal photodetectors evanescently coupled with upper-level silicon oxynitride dielectric waveguides Applied Physics Letters. 101. DOI: 10.1063/1.4773212  0.366
2012 Maddox SJ, Sun W, Lu Z, Nair HP, Campbell JC, Bank SR. Enhanced low-noise gain from InAs avalanche photodiodes with reduced dark current and background doping Applied Physics Letters. 101. DOI: 10.1063/1.4757424  0.374
2012 Sampath AV, Zhou QG, Enck RW, McIntosh D, Shen H, Campbell JC, Wraback M. P-type interface charge control layers for enabling GaN/SiC separate absorption and multiplication avalanche photodiodes Applied Physics Letters. 101. DOI: 10.1063/1.4748793  0.347
2012 Chen B, Zhou Q, McIntosh DC, Yuan J, Chen Y, Sun W, Campbell JC, Holmes AL. Natural lithography nano-sphere texturing as antireflective layer on InP-based pin photodiodes Electronics Letters. 48: 1340-1341. DOI: 10.1049/El.2012.2849  0.368
2011 Li Z, Fu Y, Piels M, Pan H, Beling A, Bowers JE, Campbell JC. High-power high-linearity flip-chip bonded modified uni-traveling carrier photodiode. Optics Express. 19: B385-90. PMID 22274046 DOI: 10.1364/Oe.19.00B385  0.375
2011 Zhou Q, McIntosh DC, Chen Y, Sun W, Li Z, Campbell JC. Nanosphere natural lithography surface texturing as anti-reflective layer on SiC photodiodes. Optics Express. 19: 23664-70. PMID 22109392 DOI: 10.1364/Oe.19.023664  0.331
2011 McIntosh D, Zhou Q, Chen Y, Campbell JC. High quantum efficiency GaP avalanche photodiodes. Optics Express. 19: 19607-12. PMID 21996902 DOI: 10.1364/Oe.19.019607  0.359
2011 Li Z, Nayak BK, Iyengar VV, McIntosh D, Zhou Q, Gupta MC, Campbell JC. Laser-textured silicon photodiode with broadband spectral response. Applied Optics. 50: 2508-11. PMID 21673751 DOI: 10.1364/Ao.50.002508  0.417
2011 McIntosh D, Zhou Q, Lara FJ, Landers J, Campbell JC. Fluorescence Detection 400–480 nm Using Microfluidic System Integrated GaP Photodiodes Advances in Optoelectronics. 2011: 1-4. DOI: 10.1155/2011/491609  0.306
2011 Sampath AV, Enck RW, Shen H, Wraback M, Zhou Q, Mcintosh D, Campbell J. III-Nitride/SiC separate absorption and multiplication avalanche photodiodes: The importance of controlling polarization-induced interface charge International Journal of High Speed Electronics and Systems. 20: 487-496. DOI: 10.1142/S0129156411006775  0.335
2011 Cervantes-González JC, Ahn D, Zheng X, Banerjee SK, Jacome AT, Campbell JC, Zaldivar-Huerta IE. CMOS-compatible waveguide-integrated Ge metal-semiconductor-metal photodetectors The International Commission For Optics. 8011. DOI: 10.1117/12.902182  0.392
2011 Lu Z, Sun W, Hu C, Holmes A, Campbell JC, Kang Y, Liu H. Ge on Si and InP/InGaAs single photon avalanche diodes Proceedings of Spie. 8155. DOI: 10.1117/12.894533  0.358
2011 Bai X, Yuan P, McDonald P, Boisvert J, Chang J, Woo R, Labios E, Sudharsanan R, Krainak M, Yang G, Sun X, Lu W, McIntosh D, Zhou Q, Campbell J. GHz low noise short wavelength infrared (SWIR) photoreceivers Proceedings of Spie - the International Society For Optical Engineering. 8037. DOI: 10.1117/12.884193  0.567
2011 Fu Y, Li Z, Beling A, Campbell J, Taylor J, Jiang H, Quinlan F, Fortier T, Diddams S. Pulse mode characterization of high-power modified uni-traveling carrier photodiodes Photomedicine and Laser Surgery. 284-285. DOI: 10.1109/Pho.2011.6110537  0.323
2011 Campbell JC. Recent advances in avalanche photodiodes: Ultraviolet to infrared Photomedicine and Laser Surgery. 202-203. DOI: 10.1109/Pho.2011.6110496  0.346
2011 Chen B, Sun W, Campbell JC, Holmes AL. Quantum efficiency modeling of PIN photodiodes with InGaAs/GaAsSb quantum wells absorption region Ieee Photonic Society 24th Annual Meeting, Pho 2011. 35-36. DOI: 10.1109/Pho.2011.6110412  0.314
2011 Beling A, Li Z, Fu Y, Pan H, Campbell JC. High-power and high-linearity photodiodes Photomedicine and Laser Surgery. 19-20. DOI: 10.1109/Pho.2011.6110404  0.315
2011 Zhou Q, McIntosh D, Liu H, Campbell JC. Proton-Implantation-Isolated Separate Absorption Charge and Multiplication 4H-SiC Avalanche Photodiodes Ieee Photonics Technology Letters. 23: 299-301. DOI: 10.1109/Lpt.2010.2101057  0.343
2011 Lu Z, Kang Y, Hu C, Zhou Q, Liu H, Campbell JC. Geiger-Mode Operation of Ge-on-Si Avalanche Photodiodes Ieee Journal of Quantum Electronics. 47: 731-735. DOI: 10.1109/Jqe.2011.2110637  0.357
2011 Hu C, Zheng X, Campbell JC, Onat BM, Jiang X, Itzler MA. Characterization of an InGaAs/InP-based single-photon avalanche diode with gated-passive quenching with active reset circuit Journal of Modern Optics. 58: 201-209. DOI: 10.1080/09500340.2010.515749  0.381
2011 Zhou Q, McIntosh DC, Lu Z, Campbell JC, Sampath AV, Shen H, Wraback M. GaN/SiC avalanche photodiodes Applied Physics Letters. 99. DOI: 10.1063/1.3636412  0.402
2010 Hu C, Zheng X, Campbell JC, Onat BM, Jiang X, Itzler MA. High-performance InGaAs/InP-based single-photon avalanche diode with reduced afterpulsing Proceedings of Spie. 7681. DOI: 10.1117/12.851356  0.383
2010 Bai X, Yuan P, McDonald P, Boisvert J, Woo R, Wan K, Sudharsanan R, Krainak M, Yang G, Sun X, Lu W, McIntosh D, Zhou Q, Liu H, Campbell J. Development of low-noise and high-speed SWIR photo receivers Proceedings of Spie. 7660. DOI: 10.1117/12.849477  0.527
2010 Fu Y, Pan H, Hu C, Campbell J. High-linearity monolithically integrated photodiodes and Wilkinson power combiner at 20 GHz Photonics. 22-23. DOI: 10.1109/Photonics.2010.5698735  0.331
2010 Asano T, Hu C, Zhang Y, Liu M, Campbell JC, Madhukar A. Design Consideration and Demonstration of Resonant-Cavity-Enhanced Quantum Dot Infrared Photodetectors in Mid-Infrared Wavelength Regime (3–5 $\mu{\rm m}$) Ieee Journal of Quantum Electronics. 46: 1484-1491. DOI: 10.1109/Jqe.2010.2052351  0.37
2010 Li Z, Pan H, Chen H, Beling A, Campbell JC. High-Saturation-Current Modified Uni-Traveling-Carrier Photodiode With Cliff Layer Ieee Journal of Quantum Electronics. 46: 626-632. DOI: 10.1109/Jqe.2010.2046140  0.403
2010 Fu Y, Pan H, Campbell JC. Photodiodes With Monolithically Integrated Wilkinson Power Combiner Ieee Journal of Quantum Electronics. 46: 541-545. DOI: 10.1109/Jqe.2009.2035058  0.337
2010 Hu C, Liu M, Zheng X, Campbell JC. Dynamic Range of Passive Quenching Active Reset Circuit for Single Photon Avalanche Diodes Ieee Journal of Quantum Electronics. 46: 35-39. DOI: 10.1109/Jqe.2009.2024086  0.307
2010 Hastings AS, Tulchinsky DA, Williams KJ, Pan H, Beling A, Campbell JC. Minimizing Photodiode Nonlinearities by Compensating Voltage-Dependent Responsivity Effects Journal of Lightwave Technology. 28: 3329-3333. DOI: 10.1109/Jlt.2010.2081968  0.308
2010 Pan H, Li Z, Campbell JC. High-Power High-Responsivity Modified Uni-Traveling-Carrier Photodiode Used as V-Band Optoelectronic Mixers Journal of Lightwave Technology. 28: 1184-1189. DOI: 10.1109/Jlt.2010.2043215  0.359
2010 Pan H, Li Z, Beling A, Campbell JC. Characterization of High-Linearity Modified Uni-Traveling Carrier Photodiodes Using Three-Tone and Bias Modulation Techniques Journal of Lightwave Technology. 28: 1316-1322. DOI: 10.1109/Jlt.2010.2041038  0.355
2010 Oh J, Campbell JC. Thermal desorption of Ge native oxides and loss of Ge from the surface Materials Science in Semiconductor Processing. 13: 185-188. DOI: 10.1016/J.Mssp.2010.10.009  0.526
2010 Campbell JC, Hu C. Infrared single photon avalanche detectors Physica Status Solidi (C). 7: 2536-2539. DOI: 10.1002/Pssc.200983891  0.33
2009 Pan H, Li Z, Beling A, Campbell JC. Measurement and modeling of high-linearity modified uni-traveling carrier photodiode with highly-doped absorber. Optics Express. 17: 20221-6. PMID 19997246 DOI: 10.1364/Oe.17.020221  0.344
2009 Zaoui WS, Chen HW, Bowers JE, Kang Y, Morse M, Paniccia MJ, Pauchard A, Campbell JC. Frequency response and bandwidth enhancement in Ge/Si avalanche photodiodes with over 840 GHz gain-bandwidth-product. Optics Express. 17: 12641-9. PMID 19654668 DOI: 10.1364/Oe.17.012641  0.43
2009 Yuan P, Sudharsanan R, Boisvert J, Bai X, McDonald P, Isshiki T, Hong W, Salisbury M, Hu C, Liu M, Campbell JC. High-performance InP Geiger-mode SWIR avalanche photodiodes Proceedings of Spie. 7320. DOI: 10.1117/12.821284  0.525
2009 Kang Y, Liu H, Morse M, Paniccia MJ, Zadka M, Litski S, Sarid G, Pauchard A, Kuo Y, Chen H, Zaoui WS, Bowers JE, Beling A, McIntosh DC, Zheng X, ... Campbell JC, et al. Epitaxially-grown germanium/silicon avalanche photodiodes for near infrared light detection Proceedings of Spie. 7339: 733906. DOI: 10.1117/12.818917  0.446
2009 Hu C, Liu M, Campbell JC. Improved passive quenching with active reset circuit Proceedings of Spie. 7320. DOI: 10.1117/12.818313  0.333
2009 Bai X, McIntosh D, Liu H, Campbell JC. High Single Photon Detection Efficiency 4H-SiC Avalanche Photodiodes Proceedings of Spie. 7320. DOI: 10.1117/12.818122  0.347
2009 Li Z, Chen H, Pan H, Beling A, Campbell JC. High-Power Integrated Balanced Photodetector Ieee Photonics Technology Letters. 21: 1858-1860. DOI: 10.1109/Lpt.2009.2034128  0.373
2009 Beling A, Chen H, Pan H, Campbell JC. High-Power Monolithically Integrated Traveling Wave Photodiode Array Ieee Photonics Technology Letters. 21: 1813-1815. DOI: 10.1109/Lpt.2009.2033817  0.355
2009 Zhou Q, Liu H, McIntosh DC, Hu C, Zheng X, Campbell JC. Proton-Implantation-Isolated 4H-SiC Avalanche Photodiodes Ieee Photonics Technology Letters. 21: 1734-1736. DOI: 10.1109/Lpt.2009.2032524  0.335
2009 Liu H, Zheng X, Zhou Q, Bai X, Mcintosh DC, Campbell JC. Double Mesa Sidewall Silicon Carbide Avalanche Photodiode Ieee Journal of Quantum Electronics. 45: 1524-1528. DOI: 10.1109/Jqe.2009.2022046  0.35
2009 Bai X, Liu H, McIntosh DC, Campbell JC. High-Detectivity and High-Single-Photon-Detection-Efficiency 4H-SiC Avalanche Photodiodes Ieee Journal of Quantum Electronics. 45: 300-303. DOI: 10.1109/Jqe.2009.2013093  0.397
2009 Pan H, Beling A, Chen H, Campbell JC. The Frequency Behavior of the Intermodulation Distortions of Modified Uni-Traveling Carrier Photodiodes Based on Modulated Voltage Measurements Ieee Journal of Quantum Electronics. 45: 273-277. DOI: 10.1109/Jqe.2009.2013089  0.328
2009 Pan H, Campbell JC, Beling A, Chen H, Yoder PD. A High-Linearity Modified Uni-Traveling Carrier Photodiode With Offset Effects of Nonlinear Capacitance Journal of Lightwave Technology. 27: 4435-4439. DOI: 10.1109/Jlt.2009.2024168  0.309
2009 Beling A, Campbell JC. InP-Based High-Speed Photodetectors Journal of Lightwave Technology. 27: 343-355. DOI: 10.1109/Jlt.2008.2008399  0.311
2009 Chan J, Burke B, Evans K, Williams KA, Vasudevan S, Liu M, Campbell J, Ghosh AW. Reversal of current blockade in nanotube-based field effect transistors through multiple trap correlations Physical Review B. 80. DOI: 10.1103/Physrevb.80.033402  0.563
2009 Liu H, Pan H, Hu C, McIntosh D, Lu Z, Campbell J, Kang Y, Morse M. Avalanche photodiode punch-through gain determination through excess noise analysis Journal of Applied Physics. 106: 064507. DOI: 10.1063/1.3226659  0.381
2008 Kang Y, Zadka M, Litski S, Sarid G, Morse M, Paniccia MJ, Kuo YH, Bowers J, Beling A, Liu HD, McIntosh DC, Campbell J, Pauchard A. Epitaxially-grown Ge/Si avalanche photodiodes for 1.3 microm light detection. Optics Express. 16: 9365-71. PMID 18575500 DOI: 10.1364/Oe.16.009365  0.419
2008 Liu H, Mcintosh D, Bai X, Pan H, Liu M, Campbell JC, Cha HY. 4H-SiC PIN Recessed-Window Avalanche Photodiode With High Quantum Efficiency Ieee Photonics Technology Letters. 20: 1551-1553. DOI: 10.1109/Lpt.2008.928823  0.369
2008 Beling A, Pan H, Chen H, Campbell JC. Measurement and Modeling of a High-Linearity Modified Uni-Traveling Carrier Photodiode Ieee Photonics Technology Letters. 20: 1219-1221. DOI: 10.1109/Lpt.2008.926016  0.307
2008 Liu M, Hu C, Campbell JC, Pan Z, Tashima MM. Reduce Afterpulsing of Single Photon Avalanche Diodes Using Passive Quenching With Active Reset Ieee Journal of Quantum Electronics. 44: 430-434. DOI: 10.1109/Jqe.2007.916688  0.369
2008 Beling A, Pan H, Chen H, Campbell JC. Linearity of Modified Uni-Traveling Carrier Photodiodes Journal of Lightwave Technology. 26: 2373-2378. DOI: 10.1109/Jlt.2008.927184  0.358
2008 Beling A, Pan H, Chen H, Campbell J. Measurement and modelling of high-linearity partially depleted absorber photodiode Electronics Letters. 44: 1419. DOI: 10.1049/El:20089792  0.327
2008 Kang Y, Liu H, Morse M, Paniccia MJ, Zadka M, Litski S, Sarid G, Pauchard A, Kuo Y, Chen H, Zaoui WS, Bowers JE, Beling A, McIntosh DC, Zheng X, ... Campbell JC, et al. Monolithic germanium/silicon avalanche photodiodes with 340 GHz gain–bandwidth product Nature Photonics. 3: 59-63. DOI: 10.1038/Nphoton.2008.247  0.444
2008 Oh J, Majhi P, Tseng H, Jammy R, Kelly DQ, Banerjee SK, Campbell JC. Interface characteristics of ZrO2 high-k gate dielectrics on epitaxial Ge capacitor layers after thermal desorption of Ge native oxide and Ge nitridation Thin Solid Films. 516: 4107-4110. DOI: 10.1016/J.Tsf.2007.10.012  0.594
2008 Pan H, Beling A, Chen H, Campbell JC. Characterization and optimization of high-power InGaAs/InP photodiodes Optical and Quantum Electronics. 40: 41-46. DOI: 10.1007/S11082-008-9230-9  0.36
2007 Bai X, Mcintosh D, Liu H, Campbell JC. Ultraviolet Single Photon Detection With Geiger-Mode 4H-SiC Avalanche Photodiodes Ieee Photonics Technology Letters. 19: 1822-1824. DOI: 10.1109/Lpt.2007.906830  0.344
2007 Wang X, Duan N, Chen H, Campbell JC. InGaAs–InP Photodiodes With High Responsivity and High Saturation Power Ieee Photonics Technology Letters. 19: 1272-1274. DOI: 10.1109/Lpt.2007.902274  0.59
2007 Liu M, Bai X, Hu C, Guo X, Campbell JC, Pan Z, Tashima MM. Low Dark Count Rate and High Single-Photon Detection Efficiency Avalanche Photodiode in Geiger-Mode Operation Ieee Photonics Technology Letters. 19: 378-380. DOI: 10.1109/Lpt.2007.891939  0.569
2007 Liu M, Hu C, Bai X, Guo X, Campbell JC, Pan Z, Tashima MM. High-Performance InGaAs/InP Single-Photon Avalanche Photodiode Ieee Journal of Selected Topics in Quantum Electronics. 13: 887-894. DOI: 10.1109/Jstqe.2007.903855  0.61
2007 Bai X, Guo X, Mcintosh DC, Liu H, Campbell JC. High Detection Sensitivity of Ultraviolet 4H-SiC Avalanche Photodiodes Ieee Journal of Quantum Electronics. 43: 1159-1162. DOI: 10.1109/Jqe.2007.905031  0.609
2007 Huang Z, Oh J, Banerjee SK, Campbell JC. Effectiveness of SiGe Buffer Layers in Reducing Dark Currents of Ge-on-Si Photodetectors Ieee Journal of Quantum Electronics. 43: 238-242. DOI: 10.1109/Jqe.2006.890395  0.573
2007 Demiguel S, Sahri N, Hartlaub M, Blache F, Gariah H, Vuiye S, Carpentier D, Barbier D, Campbell J. Low-cost photoreceiver integrating an EDWA and waveguide PIN photodiode for 40 Gbit∕s applications Electronics Letters. 43: 51. DOI: 10.1049/El:20072453  0.345
2006 Ren X, Huang H, Huang Y, Wang X, Wang Q, Wang W, Miao A, Li Y, Cui H, Ye P, Campbell JC. Long wavelength integrated optical demultiplexing and receiving device based on one-mirror-inclined three-mirror cavity structure Proceedings of Spie - the International Society For Optical Engineering. 6352. DOI: 10.1117/12.692714  0.444
2006 Guo X, Beck AL, Huang Z, Duan N, Campbell JC, Emerson D, Sumakeris JJ. Performance of low-dark-current 4H-SiC avalanche photodiodes with thin multiplication layer Ieee Transactions On Electron Devices. 53: 2259-2264. DOI: 10.1109/Ted.2006.879677  0.712
2006 Liu H, Guo X, McIntosh D, Campbell JC. Demonstration of Ultraviolet 6H-SiC PIN Avalanche Photodiodes Ieee Photonics Technology Letters. 18: 2508-2510. DOI: 10.1109/Lpt.2006.887211  0.598
2006 Li N, Chen H, Duan N, Liu M, Demiguel S, Sidhu R, Holmes AL, Campbell JC. High power photodiode wafer bonded to si using au with improved responsivity and output power Ieee Photonics Technology Letters. 18: 2526-2528. DOI: 10.1109/Lpt.2006.887209  0.55
2006 Guo X, Rowland LB, Dunne GT, Fronheiser JA, Sandvik PM, Beck AL, Campbell JC. Demonstration of ultraviolet separate absorption and multiplication 4H-SiC avalanche photodiodes Ieee Photonics Technology Letters. 18: 136-138. DOI: 10.1109/Lpt.2005.860384  0.59
2006 Huang Z, Kong N, Guo X, Liu M, Duan N, Beck AL, Banerjee SK, Campbell JC. 21-GHz-bandwidth germanium-on-silicon photodiode using thin SiGe buffer layers Ieee Journal On Selected Topics in Quantum Electronics. 12: 1450-1453. DOI: 10.1109/Jstqe.2006.884073  0.701
2006 Duan N, Wang X, Li N, Liu H, Campbell JC. Thermal Analysis of High-Power InGaAs–InP Photodiodes Ieee Journal of Quantum Electronics. 42: 1255-1258. DOI: 10.1109/Jqe.2006.883498  0.555
2006 Ramirez DA, Hayat MM, Karve G, Campbell JC, Torres SN, Saleh BEA, Teich MC. Detection efficiencies and generalized breakdown probabilities for nanosecond-gated near infrared single-photon avalanche photodiodes Ieee Journal of Quantum Electronics. 42: 137-145. DOI: 10.1109/Jqe.2005.861627  0.368
2006 Huang Z, Carey JE, Liu M, Guo X, Mazur E, Campbell JC. Microstructured silicon photodetector Applied Physics Letters. 89: 33506. DOI: 10.1063/1.2227629  0.635
2006 Sidhu R, Zhang L, Tan N, Duan N, Campbell JC, Holmes AL, Hsu CF, Itzler MA. 2.4 μm cutoff wavelength avalanche photodiode on InP substrate Electronics Letters. 42: 71-72. DOI: 10.1049/El:20063415  0.556
2006 Beck J, Wan C, Kinch M, Robinson J, Mitra P, Scritchfield R, Ma F, Campbell J. The HgCdTe electron avalanche photodiode Leos Summer Topical Meeting. 36-37. DOI: 10.1007/S11664-006-0237-3  0.362
2006 Krishna S, Forman D, Annamalai S, Dowd P, Varangis P, Tumolillo T, Gray A, Zilko J, Sun K, Liu M, Campbell J, Carothers D. Two-color focal plane arrays based on self assembled quantum dots in a well heterostructure Physica Status Solidi C: Conferences. 3: 439-443. DOI: 10.1002/Pssc.200564162  0.364
2005 Ma F, Wang S, Campbell JC. Shot noise suppression in avalanche photodiodes. Physical Review Letters. 95: 176604. PMID 16383852 DOI: 10.1103/Physrevlett.95.176604  0.504
2005 Annamalai S, Dowd P, Forman D, Varangis P, Tumolillo T, Gray A, Sun K, Liu M, Campbell J, Carothers D, Krishna S. Two-color infrared Focal Plane Array on InAs/InGaAs/GaAs quantum dots in a well detectors design Proceedings of Spie - the International Society For Optical Engineering. 5897: 1-4. DOI: 10.1117/12.617775  0.431
2005 Sidhu R, Duan N, Campbell JC, Holmes AL. A long-wavelength photodiode on InP using lattice-matched GaInAs-GaAsSb type-II quantum wells Ieee Photonics Technology Letters. 17: 2715-2717. DOI: 10.1109/Lpt.2005.859163  0.549
2005 Duan N, Wang S, Ma F, Li N, Campbell JC, Wang C, Coldren LA. High-speed and low-noise SACM avalanche photodiodes with an impact-ionization-engineered multiplication region Ieee Photonics Technology Letters. 17: 1719-1721. DOI: 10.1109/Lpt.2005.851903  0.638
2005 Beck AL, Karve G, Wang S, Ming J, Guo X, Campbell JC. Geiger mode operation of ultraviolet 4H-SiC avalanche photodiodes Ieee Photonics Technology Letters. 17: 1507-1509. DOI: 10.1109/Lpt.2005.848399  0.584
2005 Guo X, Beck AL, Campbell JC, Emerson D, Sumakeris J. Spatial nonuniformity of 4H-SiC avalanche photodiodes at high gain Ieee Journal of Quantum Electronics. 41: 1213-1216. DOI: 10.1109/Jqe.2005.854132  0.55
2005 Guo X, Beck AL, Li X, Campbell JC, Emerson D, Sumakeris J. Study of reverse dark current in 4H-SiC avalanche photodiodes Ieee Journal of Quantum Electronics. 41: 562-567. DOI: 10.1109/Jqe.2005.843616  0.56
2005 Duan N, Wang S, Zheng XG, Li X, Li N, Campbell JC, Wang C, Coldren LA. Detrimental effect of impact ionization in the absorption region on the frequency response and excess noise performance of InGaAs-InAlAs SACM avalanche photodiodes Ieee Journal of Quantum Electronics. 41: 568-572. DOI: 10.1109/Jqe.2005.843613  0.545
2005 Demiguel S, Li X, Li N, Chen H, Campbell JC, Wei J, Anselm A. Analysis of partially depleted absorber waveguide photodiodes Journal of Lightwave Technology. 23: 2505-2512. DOI: 10.1109/Jlt.2005.850772  0.387
2005 Kwon O, Hayat MM, Campbell JC, Saleh BEA, Teich MC. Gain-bandwidth product optimization of heterostructure avalanche photodiodes Journal of Lightwave Technology. 23: 1896-1906. DOI: 10.1109/Jlt.2005.846911  0.322
2005 Liu M, Wang S, Campbell JC, Beck JD, Wan CF, Kinch MA. Study of diffusion length in two-dimensional HgCdTe avalanche photodiodes by optical beam induced current Journal of Applied Physics. 98. DOI: 10.1063/1.2060948  0.458
2005 Krishna S, Forman D, Annamalai S, Dowd P, Varangis P, Tumolillo T, Gray A, Zilko J, Sun K, Liu M, Campbell J, Carothers D. Demonstration of a 320×256 two-color focal plane array using InAs/InGaAs quantum dots in well detectors Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1924887  0.386
2005 Karve G, Wang S, Ma F, Li X, Campbell JC, Ispasoiu RG, Bethune DS, Risk WP, Kinsey GS, Boisvert JC, Isshiki TD, Sudharsanan R. Origin of dark counts in In 0.53 Ga 0.47As/In 0.52Al 0.48As avalanche photodiodes operated in Geiger mode Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1861498  0.654
2004 Boisvert J, Masalykin A, Kinsey GS, Isshiki T, Haddad M, Sudharsanan R, Zheng X, Campbell JC. Characterization of InAlAs/InGaAs APD arrays for SWIR imaging applications Proceedings of Spie - the International Society For Optical Engineering. 5406: 13-20. DOI: 10.1117/12.541541  0.635
2004 Kwon O, Hayat MM, Campbell JC, Saleh BEA, Teich MC. Effect of stochastic dead space on noise in avalanche photodiodes Ieee Transactions On Electron Devices. 51: 693-700. DOI: 10.1109/Ted.2004.825798  0.306
2004 Li X, Li N, Demiguel S, Zheng X, Campbell JC, Tan HH, Jagadish C. A partially depleted absorber photodiode with graded doping injection regions Ieee Photonics Technology Letters. 16: 2326-2328. DOI: 10.1109/Lpt.2004.834563  0.37
2004 Li N, Chen H, Demiguel S, Li X, Campbell JC, Isshiki TD, Kinsey GS, Sudharsansan R. High-power charge-compensated unitraveling-carrier balanced photodetector Ieee Photonics Technology Letters. 16: 2329-2331. DOI: 10.1109/Lpt.2004.834491  0.698
2004 Li N, Li X, Demiguel S, Zheng X, Campbell JC, Tulchins DA, Williams KJ, Isshiki TD, Kinsey GS, Sudharsansan R. High-Saturation-Current Charge-Compensated InGaAs-InP Uni-Traveling-Carrier Photodiode Ieee Photonics Technology Letters. 16: 864-866. DOI: 10.1109/Lpt.2004.823773  0.69
2004 Oh J, Banerjee SK, Campbell JC. Metal-germanium-metal photodetectors on heteroepitaxial Ge-on-Si with amorphous Ge Schottky barrier enhancement layers Ieee Photonics Technology Letters. 16: 581-583. DOI: 10.1109/Lpt.2003.822258  0.611
2004 Kwon O, Hayat MM, Campbell JC, Saleh BEA, Teich MC. Optimized breakdown probabilities in Al/sub 0.6/Ga/sub 0.4/As-GaAs heterojunction avalanche photodiodes Ieee Electron Device Letters. 25: 599-601. DOI: 10.1109/Led.2004.834489  0.342
2004 Campbell JC, Demiguel S, Beck A, Guo X, Wang S, Zheng X, Li X, Beck JD, Kinch MA, Huntington A, Coldren LA, Decobert J, Tscherptner N. Correction to “Recent Advances in Avalanche Photodiodes” Ieee Journal of Selected Topics in Quantum Electronics. 10: 1446-1447. DOI: 10.1109/Jstqe.2004.842288  0.486
2004 Campbell JC, Demiguel S, Ma F, Beck A, Guo X, Wang S, Zheng X, Li X, Beck JD, Kinch MA, Huntington A, Coldren LA, Decobert J, Tscherptner N. Recent advances in avalanche photodiodes Ieee Journal On Selected Topics in Quantum Electronics. 10: 777-787. DOI: 10.1109/Jstqe.2004.833971  0.671
2004 Tulchinsky DA, Li X, Li N, Demiguel S, Campbell JC, Williams KJ. High-saturation current wide-bandwidth photodetectors Ieee Journal of Selected Topics in Quantum Electronics. 10: 702-708. DOI: 10.1109/Jstqe.2004.831951  0.39
2004 Beck AL, Yang B, Wang S, Collins CJ, Campbell JC, Yulius A, Chen A, Woodall JM. Quasi-direct UV/blue GaP avalanche photodetectors Ieee Journal of Quantum Electronics. 40: 1695-1699. DOI: 10.1109/Jqe.2004.837788  0.4
2004 Li X, Li N, Demiguel S, Campbell JC, Tulchinsky D, Williams KJ. A comparison of front- and backside-illuminated high-saturation power partially depleted absorber photodetectors Ieee Journal of Quantum Electronics. 40: 1321-1325. DOI: 10.1109/Jqe.2004.833206  0.406
2004 Beck AL, Yang B, Guo X, Campbell JC. Edge Breakdown in 4H-SiC Avalanche Photodiodes Ieee Journal of Quantum Electronics. 40: 321-324. DOI: 10.1109/Jqe.2003.823033  0.581
2004 Huang Z, Oh J, Campbell JC. Back-side-illuminated high-speed Ge photodetector fabricated on Si substrate using thin SiGe buffer layers Applied Physics Letters. 85: 3286-3288. DOI: 10.1063/1.1805706  0.638
2004 Kim ET, Madhukar A, Ye Z, Campbell JC. High detectivity InAs quantum dot infrared photodetectors Applied Physics Letters. 84: 3277-3279. DOI: 10.1063/1.1719259  0.38
2004 Sidhu R, Chen H, Duan N, Karve GV, Campbell JC, Holmes AL. GaAsSb resonant-cavity enhanced avalanche photodiode operating at 1.06 μm Electronics Letters. 40: 1296-1297. DOI: 10.1049/El:20046147  0.592
2004 Huntington AS, Wang CS, Zheng XG, Campbell JC, Coldren LA. Relationship of growth mode to surface morphology and dark current in InAlAs/InGaAs avalanche photodiodes grown by MBE on InP Journal of Crystal Growth. 267: 458-465. DOI: 10.1016/J.Jcrysgro.2004.04.041  0.323
2004 Oh J, Campbell JC. Thermal desorption of Ge native oxides and the loss of Ge from the surface Journal of Electronic Materials. 33: 364-367. DOI: 10.1007/S11664-004-0144-4  0.528
2004 Kinch MA, Beck JD, Wan CF, Campbell J. HgCdTe electron avalanche photodiodes Journal of Electronic Materials. 33: 630-639. DOI: 10.1007/S11664-004-0058-1  0.329
2003 Campbell JC. Advances in High-Speed Photodetectors Frontiers in Optics. DOI: 10.1364/Fio.2003.Thm6  0.335
2003 Csutak SM, Schaub JD, Yang B, Campbell JC. High-speed short wavelength silicon photodetectors fabricated in 130nm CMOS process Proceedings of Spie - the International Society For Optical Engineering. 4997: 135-145. DOI: 10.1117/12.479474  0.807
2003 Demiguel S, Li N, Li X, Zheng X, Kim J, Campbell JC, Lu H, Anselm A. Very high-responsivity evanescently coupled photodiodes integrating a short planar multimode waveguide for high-speed applications Ieee Photonics Technology Letters. 15: 1761-1763. DOI: 10.1109/Lpt.2003.819724  0.377
2003 Li X, Li N, Zheng X, Demiguel S, Campbell JC, Tulchinsky DA, Williams KJ. High-saturation-current InP-InGaAs photodiode with partially depleted absorber Ieee Photonics Technology Letters. 15: 1276-1278. DOI: 10.1109/Lpt.2003.816118  0.354
2003 Yang B, Schaub JD, Csutak SM, Rogers DL, Campbell JC. 10-Gb/s all-silicon optical receiver Ieee Photonics Technology Letters. 15: 745-747. DOI: 10.1109/Lpt.2003.810261  0.803
2003 Kwon O, Hayat MM, Wang S, Campbell JC, Holmes A, Pan Y, Saleh BEA, Teich MC. Optimal excess noise reduction in thin heterojunction Al/sub 0.6/Ga/sub 0.4/As-GaAs avalanche photodiodes Ieee Journal of Quantum Electronics. 39: 1287-1296. DOI: 10.1109/Jqe.2003.817671  0.519
2003 Karve G, Zheng X, Zhang X, Li X, Li N, Wang S, Ma F, Holmes A, Campbell JC, Kinsey GS, Boisvert JC, Isshiki TD, Sudharsanan R, Bethune DS, Risk WP. Geiger mode operation of an In0.53Ga0.47As-In0.52Al0.48As avalanche photodiode Ieee Journal of Quantum Electronics. 39: 1281-1286. DOI: 10.1109/Jqe.2003.817244  0.71
2003 Wang S, Ma F, Li X, Sidhu R, Zheng X, Sun X, Holmes AL, Campbell JC. Ultra-low noise avalanche photodiodes with a "centered-well" multiplication region Ieee Journal of Quantum Electronics. 39: 375-378. DOI: 10.1109/Jqe.2002.807183  0.548
2003 Hayat MM, Sakoglu U, Kwon O, Wang S, Campbell JC, Saleh BEA, Teich MC. Breakdown probabilities for thin heterostructure avalanche photodiodes Ieee Journal of Quantum Electronics. 39: 179-185. DOI: 10.1109/Jqe.2002.806217  0.512
2003 Ye Z, Campbell JC, Chen Z, Kim E, Madhukar A. Noise and photoconductive gain in InAs quantum-dot infrared photodetectors Applied Physics Letters. 83: 1234-1236. DOI: 10.1063/1.1597987  0.384
2003 Wraback M, Shen H, Rudin S, Bellotti E, Goano M, Carrano JC, Collins CJ, Campbell JC, Dupuis RD. Direction-dependent band nonparabolicity effects on high-field transient electron transport in GaN Applied Physics Letters. 82: 3674-3676. DOI: 10.1063/1.1577833  0.48
2003 Wang S, Ma F, Li X, Karve G, Zheng X, Campbell JC. Analysis of breakdown probabilities in avalanche photodiodes using a history-dependent analytical model Applied Physics Letters. 82: 1971-1973. DOI: 10.1063/1.1559946  0.52
2003 Li N, Sidhu R, Li X, Ma F, Zheng X, Wang S, Karve G, Demiguel S, Holmes AL, Campbell JC. InGaAs/InAlAs avalanche photodiode with undepleted absorber Applied Physics Letters. 82: 2175-2177. DOI: 10.1063/1.1559437  0.541
2003 Sun X, Wang S, Zheng XG, Li X, Campbell JC, Holmes AL. 1.31 μm GaAsSb resonant-cavity-enhanced separate absorption, charge and multiplication avalanche photodiodes with low noise Journal of Applied Physics. 93: 774-776. DOI: 10.1063/1.1526933  0.587
2003 Csutak SM, Schaub JD, Wang S, Mogab J, Campbell JC. Integrated silicon optical receiver with avalanche photodiode Iee Proceedings: Optoelectronics. 150: 235-237. DOI: 10.1049/ip-opt:20030391  0.785
2003 Demiguel S, Zheng X, Li N, Li X, Campbell JC, Decobert J, Tscherptner N, Anselm A. High-responsivity and high-speed evanescently-coupled avalanche photodiodes Electronics Letters. 39: 1848-1849. DOI: 10.1049/El:20031182  0.394
2003 Guo X, Beck A, Yang B, Campbell JC. Low dark current 4H-SiC avalanche photodiodes Electronics Letters. 39: 1673-1674. DOI: 10.1049/El:20031059  0.565
2003 Li X, Demiguel S, Li N, Campbell JC, Tulchinsky DL, Williams KJ. Backside illuminated high saturation current partially depleted absorber photodetectors Electronics Letters. 39: 1466-1467. DOI: 10.1049/El:20030927  0.373
2003 Chowdhury U, Wong MM, Collins CJ, Yang B, Denyszyn JC, Campbell JC, Dupuis RD. High-performance solar-blind photodetector using an Al0.6Ga0.4N n-type window layer Journal of Crystal Growth. 248: 552-555. DOI: 10.1016/S0022-0248(02)01877-8  0.561
2002 Kinsey GS, Sidhu R, Holmes AL, Campbell JC. Improved optical coupling in waveguide photodetectors incorporating a wedge-shaped input facet. Optics Letters. 27: 749-50. PMID 18007920 DOI: 10.1364/Ol.27.000749  0.67
2002 Chowdhury U, Collins CJ, Wong MM, Zhu TG, Denyszyn JC, Choi JH, Yang B, Campbell JC, Dupuis RD. Epitaxial growth for solar-blind AlGaN photodetector imaging arrays by metalorganic chemical vapor deposition Materials Research Society Symposium - Proceedings. 743: 499-503. DOI: 10.1557/Proc-743-L7.9  0.478
2002 Hayat MM, Kwon O, Wang S, Campbell JC, Saleh BEA, Teich MC. Boundary effects on multiplication noise in thin heterostructure avalanche photodiodes: theory and experiment [Al/sub 0.6/Ga/sub 0.4/As/GaAs] Ieee Transactions On Electron Devices. 49: 2114-2123. DOI: 10.1109/Ted.2002.805573  0.519
2002 Wang S, Sidhu R, Karve G, Ma F, Li X, Zheng XG, Hurst JB, Sun X, Li N, Holmes AL, Campbell JC. A study of low-bias photocurrent gradient of avalanche photodiodes Ieee Transactions On Electron Devices. 49: 2107-2113. DOI: 10.1109/Ted.2002.805233  0.523
2002 Li X, Zheng X, Wang S, Ma F, Campbell JC. Calculation of gain and noise with dead space for GaAs and Al/sub x/Ga/sub 1-x/As avalanche photodiode Ieee Transactions On Electron Devices. 49: 1112-1117. DOI: 10.1109/Ted.2002.1013264  0.5
2002 Wang S, Hurst JB, Ma F, Sidhu R, Sun X, Zheng XG, Holmes AL, Huntington A, Coldren LA, Campbell JC. Low-noise impact-ionization-engineered avalanche photodiodes grown on InP substrates Ieee Photonics Technology Letters. 14: 1722-1724. DOI: 10.1109/Lpt.2002.804651  0.342
2002 Sun X, Wang S, Hsu JS, Sidhu R, Zheng XG, Li X, Campbell JC, Holmes AL. GaAsSb: A novel material for near infrared photodetectors on GaAs substrates Ieee Journal On Selected Topics in Quantum Electronics. 8: 817-822. DOI: 10.1109/Jstqe.2002.800848  0.581
2002 Oh J, Campbell JC, Thomas SG, Bharatan S, Thoma R, Jasper C, Jones RE, Zirkle TE. Interdigitated Ge p-i-n photodetectors fabricated on a Si substrate using graded SiGe buffer layers Ieee Journal of Quantum Electronics. 38: 1238-1241. DOI: 10.1109/Jqe.2002.802165  0.397
2002 Ye Z, Campbell JC, Chen Z, Kim E, Madhukar A. Normal-incidence InAs self-assembled quantum-dot infrared photodetectors with a high detectivity Ieee Journal of Quantum Electronics. 38: 1234-1237. DOI: 10.1109/Jqe.2002.802159  0.353
2002 Csutak SM, Schaub JD, Wu WE, Shimer R, Campbell JC. High-speed monolithically integrated silicon photoreceivers fabricated in 130-nm CMOS technology Journal of Lightwave Technology. 20: 1724-1729. DOI: 10.1109/Jlt.2002.802221  0.817
2002 Csutak SM, Schaub JD, Wu WE, Campbell JC. High-speed monolithically integrated silicon optical receiver fabricated in 130-nm CMOS technology Ieee Photonics Technology Letters. 14: 516-518. DOI: 10.1109/68.992596  0.822
2002 Csutak SM, Dakshina-Murthy S, Campbell JC. CMOS-compatible planar silicon waveguide-grating-coupler photodetectors fabricated on silicon-on-insulator (SOI) substrates Ieee Journal of Quantum Electronics. 38: 477-480. DOI: 10.1109/3.998619  0.789
2002 Csutak SM, Schaub JD, Wu WE, Shimer R, Campbell JC. CMOS-compatible high-speed planar silicon photodiodes fabricated on SOI substrates Ieee Journal of Quantum Electronics. 38: 193-196. DOI: 10.1109/3.980272  0.819
2002 Hayat MM, Kwon O, Pan Y, Sotirelis P, Campbell JC, Saleh BEA, Teich MC. Gain-bandwidth characteristics of thin avalanche photodiodes Ieee Transactions On Electron Devices. 49: 770-781. DOI: 10.1109/16.998583  0.356
2002 Ye Z, Campbell JC, Chen Z, Kim E, Madhukar A. InAs quantum dot infrared photodetectors with In0.15Ga0.85As strain-relief cap layers Journal of Applied Physics. 92: 7462-7468. DOI: 10.1063/1.1517750  0.357
2002 Ma F, Wang S, Li X, Anselm KA, Zheng XG, Holmes AL, Campbell JC. Monte Carlo simulation of low-noise avalanche photodiodes with heterojunctions Journal of Applied Physics. 92: 4791-4795. DOI: 10.1063/1.1505987  0.507
2002 Ye Z, Campbell JC, Chen Z, Kim E, Madhukar A. Voltage-controllable multiwavelength InAs quantum-dot infrared photodetectors for mid- and far-infrared detection Journal of Applied Physics. 92: 4141-4143. DOI: 10.1063/1.1504167  0.359
2002 Collins CJ, Chowdhury U, Wong MM, Yang B, Beck AL, Dupuis RD, Campbell JC. Improved solar-blind detectivity using an AlxGa1-xN heterojunction p-i-n photodiode Applied Physics Letters. 80: 3754-3756. DOI: 10.1063/1.1480484  0.557
2002 Thomas S, Csutak S, Jones R, Bharatan S, Jasper C, Thomas R, Zirkle T, Campbell J. CMOS-compatible photodetector fabricated on thick SOI having deep implanted electrodes Electronics Letters. 38: 1202. DOI: 10.1049/El:20020832  0.74
2002 Collins CJ, Chowdhury U, Wong MM, Yang B, Beck AL, Dupuis RD, Campbell JC. Improved solar-blind external quantum efficiency of back-illuminated AlxGa1-xN heterojunction pin photodiodes Electronics Letters. 38: 824-826. DOI: 10.1049/El:20020526  0.526
2001 Chowdhury U, Wong MM, Collins CJ, Yang B, Zhu TG, Beck AL, Campbell JC, Dupuis RD. High Quantum Efficiency AlGaN/GaN Solar-Blind Photodetectors Grown by Metalorganic Chemical Vapor Deposition Mrs Proceedings. 693. DOI: 10.1557/Proc-693-I12.9.1  0.573
2001 Ye Z, Campbell JC, Chen Z, Baklenov O, Kim ET, Mukhametzhanov I, Tie J, Madhukar A. High-Performance InAs/GaAs Quantum Dots Infrared Photodetector With/Without Al0.2Ga0.8As Blocking Layers Mrs Proceedings. 692. DOI: 10.1557/Proc-692-H9.17.1  0.37
2001 Campbell JC, Wang S, Zheng XG, Kinsey GS, Holmes A.L. J, Sun X, Sidhu R, Yuan P. Ultra-low-noise avalanche photodiodes Proceedings of Spie - the International Society For Optical Engineering. 4283: 480-488. DOI: 10.1117/12.432598  0.618
2001 Gotthold D, Govindaraju S, Reifsnider J, Kinsey G, Campbell J, Holmes A. Molecular-beam epitaxy growth of Ga(In)NAs/GaAs heterostructures for photodiodes Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 19: 1400-1403. DOI: 10.1116/1.1379792  0.336
2001 Wang S, Sidhu R, Zheng X, Li X, Sun X, Holmes A, Campbell J. Low-noise avalanche photodiodes with graded impact-ionization-engineered multiplication region Ieee Photonics Technology Letters. 13: 1346-1348. DOI: 10.1109/68.969903  0.332
2001 Kinsey GS, Campbell JC, Dental AG. Waveguide avalanche photodiode operating at 1.55 μm with a gain-bandwidth product of 320 GHz Ieee Photonics Technology Letters. 13: 842-844. DOI: 10.1109/68.935822  0.701
2001 Schaub JD, Li R, Csutak SM, Campbell JC. High-speed monolithic silicon photoreceivers on high resistivity and SOI substrates Journal of Lightwave Technology. 19: 272-278. DOI: 10.1109/50.917902  0.801
2001 Li T, Lambert DJH, Wong MM, Collins CJ, Yang B, Beck AL, Chowdhury U, Dupuis RD, Campbell JC. Low-noise back-illuminated AlxGa1-xN-based p-i-n solar-blind ultraviolet photodetectors Ieee Journal of Quantum Electronics. 37: 538-545. DOI: 10.1109/3.914403  0.363
2001 Saleh MA, Hayat MM, Sotirelis PP, Holmes AL, Campbell JC, Saleh BEA, Teich MC. Impact-ionization and noise characteristics of thin III-V avalanche photodiodes Ieee Transactions On Electron Devices. 48: 2722-2731. DOI: 10.1109/16.974696  0.334
2001 Li T, Carrano JC, Eiting CJ, Grudowski PA, Lambert DJH, Kwon HK, Dupuis RD, Campbell JC, Tober RT. Design of a Resonant-Cavity-Enhanced p-i-n GaN/AlxGa1-xN Photodetector Fiber and Integrated Optics. 20: 125-131. DOI: 10.1080/01468030119593  0.401
2001 Saleh MA, Hayat MM, Kwon OH, Holmes AL, Campbell JC, Saleh BEA, Teich MC. Breakdown voltage in thin III-V avalanche photodiodes Applied Physics Letters. 79: 4037-4039. DOI: 10.1063/1.1425463  0.315
2001 Wraback M, Shen H, Carrano JC, Collins CJ, Campbell JC, Dupuis RD, Schurman MJ, Ferguson IT. Time-resolved electroabsorption measurement of the transient electron velocity overshoot in GaN Applied Physics Letters. 79: 1303-1305. DOI: 10.1063/1.1398318  0.494
2001 Chen Z, Baklenov O, Kim ET, Mukhametzhanov I, Tie J, Madhukar A, Ye Z, Campbell JC. Normal incidence InAs/AlxGa1−xAs quantum dot infrared photodetectors with undoped active region Journal of Applied Physics. 89: 4558-4563. DOI: 10.1063/1.1356430  0.348
2001 Kuryatkov VV, Temkin H, Campbell JC, Dupuis RD. Low-noise photodetectors based on heterojunctions of AlGaN-GaN Applied Physics Letters. 78: 3340-3342. DOI: 10.1063/1.1351852  0.367
2001 Zheng XG, Sun X, Wang S, Yuan P, Kinsey GS, Holmes AL, Streetman BG, Campbell JC. Multiplication noise of AlxGa1-xAs avalanche photodiodes with high Al concentration and thin multiplication region Applied Physics Letters. 78: 3833-3835. DOI: 10.1063/1.1343851  0.672
2001 Chen Z, Baklenov O, Kim E, Mukhametzhanov I, Tie J, Madhukar A, Ye Z, Campbell J. InAs/AlxGa1−xAs quantum dot infrared photodetectors with undoped active region Infrared Physics & Technology. 42: 479-484. DOI: 10.1016/S1350-4495(01)00109-8  0.346
2001 Li T, Lambert DJH, Beck AL, Collins CJ, Yang B, Wong MM, Chowdhury U, Dupuis RD, Campbell JC. Low-noise solar-blind AlxGa1-xN-based metal-semiconductor-metal ultraviolet photodetectors Journal of Electronic Materials. 30: 872-877. DOI: 10.1007/S11664-001-0074-3  0.599
2001 Wong MM, Chowdhury U, Collins CJ, Yang B, Denyszyn JC, Kim KS, Campbell JC, Dopuis RD. High Quantum Efficiency AlGaN/GaN Solar-Blind Photodetectors Grown by Metalorganic Chemical Vapor Deposition Physica Status Solidi (a) Applied Research. 188: 333-336. DOI: 10.1002/1521-396X(200111)188:1<333::Aid-Pssa333>3.0.Co;2-X  0.391
2001 Campbell JC, Collins CJ, Wong MM, Chowdhury U, Beck AL, Dupuis RD. High Quantum Efficiency at Low Bias AlxGa1-xN p-i-n Photodiodes Physica Status Solidi (a) Applied Research. 188: 283-287. DOI: 10.1002/1521-396X(200111)188:1<283::Aid-Pssa283>3.0.Co;2-H  0.559
2001 Wraback M, Shen H, Bellotti E, Carrano JC, Collins CJ, Campbell JC, Dupuis RD, Schurman MJ, Ferguson IT. Band structure effects on the transient electron velocity overshoot in GaN Physica Status Solidi (B) Basic Research. 228: 585-588. DOI: 10.1002/1521-3951(200111)228:2<585::Aid-Pssb585>3.0.Co;2-Z  0.494
2000 Campbell JC, Li T, Wang S, Beck AL, Collins CJ, Yang B, Lambert DJH, Dupuis RD, Carrano JC, Schurman MJ, Ferguson IT. AlGaN/GaN ultraviolet photodetectors Proceedings of Spie - the International Society For Optical Engineering. 4134: 124-132. DOI: 10.1117/12.405335  0.489
2000 Wang S, Sun X, Zheng XG, Holmes AL, Campbell JC, Yuan P. Avalanche photodiodes with an impact-ionization-engineered multiplication region Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 1: 9-10. DOI: 10.1109/68.883833  0.495
2000 Li R, Schaub JD, Csutak SM, Campbell JC. High-speed monolithic silicon photoreceiver fabricated on SOI Ieee Photonics Technology Letters. 12: 1046-1048. DOI: 10.1109/68.868003  0.81
2000 Kinsey GS, Hansing CC, Holmes AL, Streetman BG, Campbell JC, Dentai AG. Waveguide In0.53Ga0.47As-In0.52Al0.48As avalanche photodiode Ieee Photonics Technology Letters. 12: 416-418. DOI: 10.1109/68.839037  0.655
2000 Yang B, Li T, Heng K, Collins C, Wang S, Carrano JC, Dupuis RD, Campbell JC, Schurman MJ, Ferguson IT. Low dark current GaN avalanche photodiodes Ieee Journal of Quantum Electronics. 36: 1389-1391. DOI: 10.1109/3.892557  0.555
2000 Wang S, Li T, Reifsnider JM, Yang B, Collins C, Holmes AL, Campbell JC. Schottky metal-semiconductor-metal photodetectors on GaN films grown on sapphire by molecular beam epitaxy Ieee Journal of Quantum Electronics. 36: 1262-1266. DOI: 10.1109/3.890266  0.317
2000 Yang B, Heng K, Li T, Collins CJ, Wang S, Dupuis RD, Campbell JC, Schurman MJ, Ferguson IT. 32/spl times/32 ultraviolet Al/sub 0.1/Ga/sub 0.9/N/GaN p-i-n photodetector array Ieee Journal of Quantum Electronics. 36: 1229-1231. DOI: 10.1109/3.890260  0.534
2000 Zheng XG, Yuan P, Sun X, Kinsey GS, Holmes AL, Streetman BG, Campbell JC. Temperature dependence of the ionization coefficients of AlxGa1-xAs Ieee Journal of Quantum Electronics. 36: 1168-1173. DOI: 10.1109/3.880657  0.659
2000 Yuan P, Hansing CC, Anselm KA, Lenox CV, Nie H, Holmes AL, Streetman BG, Campbell JC. Impact ionization characteristics of III-V semiconductors for a wide range of multiplication region thicknesses Ieee Journal of Quantum Electronics. 36: 198-204. DOI: 10.1109/3.823466  0.331
2000 Yuan P, Baklenov O, Nie H, Holmes AL, Streetman BG, Campbell JC. High-speed and low-noise avalanche photodiode operating at 1.06 μm Ieee Journal On Selected Topics in Quantum Electronics. 6: 422-425. DOI: 10.1109/2944.865097  0.444
2000 Collins CJ, Li T, Lambert DJH, Wong MM, Dupuis RD, Campbell JC. Selective regrowth of Al0.30Ga0.70Np–i–nphotodiodes Applied Physics Letters. 77: 2810-2812. DOI: 10.1063/1.1322374  0.557
2000 Lambert DJH, Wong MM, Chowdhury U, Collins C, Li T, Kwon HK, Shelton BS, Zhu TG, Campbell JC, Dupuis RD. Back illuminated AlGaN solar-blind photodetectors Applied Physics Letters. 77: 1900. DOI: 10.1063/1.1311821  0.543
2000 Kinsey GS, Gotthold DW, Holmes AL, Campbell JC. GaNAs resonant-cavity avalanche photodiode operating at 1.064 μm Applied Physics Letters. 77: 1543-1544. DOI: 10.1063/1.1308272  0.709
2000 Kinsey GS, Gotthold DW, Holmes AL, Streetman BG, Campbell JC. GaNAs avalanche photodiode operating at 0.94 μm Applied Physics Letters. 76: 2824-2825. DOI: 10.1063/1.126485  0.698
2000 Carrano JC, Lambert DJH, Eiting CJ, Collins CJ, Li T, Wang S, Yang B, Beck AL, Dupuis RD, Campbell JC. GaN avalanche photodiodes Applied Physics Letters. 76: 924-926. DOI: 10.1063/1.125631  0.545
2000 Yang B, Lambert D, Li T, Collins C, Wong M, Chowdhury U, Dupuis R, Campbell J. High-performance back-illuminated solar-blind AlGaN metal-semiconductor-metal photodetectors Electronics Letters. 36: 1866. DOI: 10.1049/El:20001301  0.552
2000 Li T, Lambert DJH, Beck AL, Collins CJ, Yang B, Wong MM, Chowdhury U, Dupuis RD, Campbell JC. Solar-blind AlxGa1-xN-based metal-semiconductor-metal ultraviolet photodetectors Electronics Letters. 36: 1581-1583. DOI: 10.1049/El:20001110  0.567
2000 Ren X, Liu K, Huang Y, Liu L, Li J, Guo W, Liao Q, Ma X, Kang X, Campbell JC. Experimental study on tunable external cavity photodetectors Optical Materials. 14: 243-246. DOI: 10.1016/S0925-3467(99)00145-7  0.324
2000 CAMPBELL JC, NIE H, LENOX C, KINSEY G, YUAN P, HOLMES AL, STREETMAN BG. HIGH SPEED RESONANT-CAVITY InGaAs/InAlAs AVALANCHE PHOTODIODES International Journal of High Speed Electronics and Systems. 10: 327-337. DOI: 10.1016/S0129-1564(00)00035-0  0.713
2000 CAMPBELL JC, DANIEL DAPKUS P. OVERVIEW OF THE OPTOELECTRONICS SESSIONS AND CHAPTER International Journal of High Speed Electronics and Systems. 10: 255-269. DOI: 10.1016/S0129-1564(00)00029-5  0.328
1999 Baklenov O, Nie H, Campbell JC, Streetman BG, Holmes AL. Long-wavelength luminescence from In[sub 0.5]Ga[sub 0.5]As/GaAs quantum dots grown by migration enhanced epitaxy Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 17: 1124. DOI: 10.1116/1.590746  0.349
1999 Lenox C, Nie H, Kinsey G, Hansing C, Campbell JC, Holmes AL, Streetman BG. Substrate preparation and interface grading in InGaAs/InAlAs photodiodes grown on InP by molecular-beam epitaxy Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 17: 1175. DOI: 10.1116/1.590718  0.377
1999 Schaub JD, Li R, Schow CL, Campbell JC, Neudeck GW, Denton J. Resonant-cavity-enhanced high-speed Si photodiode grown by epitaxial lateral overgrowth Ieee Photonics Technology Letters. 11: 1647-1649. DOI: 10.1109/68.806875  0.72
1999 Lenox C, Nie H, Yuan P, Kinsey G, Homles A, Streetman B, Campbell J. Resonant-cavity InGaAs-InAlAs avalanche photodiodes with gain-bandwidth product of 290 GHz Ieee Photonics Technology Letters. 11: 1162-1164. DOI: 10.1109/68.784238  0.741
1999 Schow CL, Schaub JD, Li R, Qi J, Campbell JC. A monolithically integrated 1-Gb/s silicon photoreceiver Ieee Photonics Technology Letters. 11: 120-121. DOI: 10.1109/68.736415  0.711
1999 Schow CL, Li R, Schaub JD, Campbell JC. Design and implementation of high-speed planar Si photodiodes fabricated on SOI substrates Ieee Journal of Quantum Electronics. 35: 1478-1482. DOI: 10.1109/3.792572  0.748
1999 Carrano J, Li T, Grudowski P, Dupuis R, Campbell J. Improved detection of the invisible Ieee Circuits and Devices Magazine. 15: 15-24. DOI: 10.1109/101.795089  0.332
1999 Li T, Beck AL, Collins C, Dupuis RD, Campbell JC, Carrano JC, Schurman MJ, Ferguson IA. Improved ultraviolet quantum efficiency using a semitransparent recessed window AlGaN/GaN heterojunction p-i-n photodiode Applied Physics Letters. 75: 2421-2423. DOI: 10.1063/1.125034  0.568
1999 Collins CJ, Li T, Beck AL, Dupuis RD, Campbell JC, Carrano JC, Schurman MJ, Ferguson IA. Improved device performance using a semi-transparent p-contact AlGaN/GaN heterojunction positive-intrinsic-negative photodiode Applied Physics Letters. 75: 2138-2140. DOI: 10.1063/1.124942  0.567
1999 Carrano JC, Li T, Eiting CJ, Dupuis RD, Campbell JC. Very high-speed ultraviolet photodetectors fabricated on GaN Journal of Electronic Materials. 28: 325-333. DOI: 10.1007/S11664-999-0035-9  0.551
1998 Campbell JC, Bean JC, Deppe DG, Huffaker DL, Streetman BG. Resonant-cavity photodetectors: Performance and functionality Proceedings of Spie - the International Society For Optical Engineering. 3290: 34-40. DOI: 10.1117/12.298260  0.525
1998 Kinsey G, Lenox C, Nie H, Campbell J, Streetman B. Resonant cavity photodetector with integrated spectral notch filter Ieee Photonics Technology Letters. 10: 1142-1143. DOI: 10.1109/68.701529  0.679
1998 Nie H, Baklenov O, Yuan P, Lenox C, Streetman B, Campbell J. Quantum-dot resonant-cavity separate absorption, charge, and multiplication avalanche photodiode operating at 1.06 μm Ieee Photonics Technology Letters. 10: 1009-1011. DOI: 10.1109/68.681300  0.578
1998 Nie H, Anselm K, Lenox C, Yuan P, Hu C, Kinsey G, Streetman B, Campbell J. Resonant-cavity separate absorption, charge and multiplication avalanche photodiodes with high-speed and high gain-bandwidth product Ieee Photonics Technology Letters. 10: 409-411. DOI: 10.1109/68.661426  0.739
1998 Deppe DG, Kudari A, Huffaker DL, Deng H, Deng Q, Campbell JC. Mode coupling in a narrow spectral bandwidth quantum-dot microcavity photodetector Ieee Photonics Technology Letters. 10: 252-254. DOI: 10.1109/68.655375  0.569
1998 Anselm K, Nie H, Hu C, Lenox C, Yuan P, Kinsey G, Campbell J, Streetman B. Performance of thin separate absorption, charge, and multiplication avalanche photodiodes Ieee Journal of Quantum Electronics. 34: 482-490. DOI: 10.1109/3.661456  0.419
1998 Schow CL, Schaub JD, Li R, Qi J, Campbell JC. A 1-Gb/s monolithically integrated silicon NMOS optical receiver Ieee Journal On Selected Topics in Quantum Electronics. 4: 1035-1039. DOI: 10.1109/2944.736109  0.723
1998 Carrano JC, Li T, Grudowski PA, Eiting CJ, Dupuis RD, Campbell JC. Comprehensive characterization of metal–semiconductor–metal ultraviolet photodetectors fabricated on single-crystal GaN Journal of Applied Physics. 83: 6148-6160. DOI: 10.1063/1.367484  0.549
1998 Lenox C, Nie H, Kinsey G, Yuan P, Holmes AL, Streetman BG, Campbell JC. Improved optical response of superlattice graded InAlAs/InGaAs p-i-n photodetectors Applied Physics Letters. 73: 3405-3407. DOI: 10.1063/1.122757  0.682
1998 Carrano JC, Li T, Brown DL, Grudowski PA, Eiting CJ, Dupuis RD, Campbell JC. Very high-speed metal-semiconductor-metal ultraviolet photodetectors fabricated on GaN Applied Physics Letters. 73: 2405-2407. DOI: 10.1063/1.122448  0.53
1998 Lenox C, Yuan P, Nie H, Baklenov O, Hansing C, Campbell JC, Holmes AL, Streetman BG. Thin multiplication region InAlAs homojunction avalanche photodiodes Applied Physics Letters. 73: 783-784. DOI: 10.1063/1.122000  0.35
1998 Carrano JC, Li T, Grudowski PA, Eiting CJ, Dupuis RD, Campbell JC. Current transport mechanisms in GaN-based metal–semiconductor–metal photodetectors Applied Physics Letters. 72: 542-544. DOI: 10.1063/1.120752  0.524
1998 Carrano J, Li T, Brown D, Grudowski P, Eiting C, Dupuis R, Campbell J. High-speed pin ultraviolet photodetectors fabricated on GaN Electronics Letters. 34: 1779. DOI: 10.1049/El:19981272  0.567
1998 Baklenov O, Nie H, Anselm KA, Campbell JC, Streetman BG. Multi-stacked quantum dot resonant-cavity photodetector operating at 1.06 /spl mu/m Electronics Letters. 34: 694-695. DOI: 10.1049/El:19980487  0.353
1998 Carrano J, Li T, Grudowski P, Eiting C, Lambert D, Schaub J, Dupuis R, Campbell J. Low dark current pin ultraviolet photodetectors fabricated on GaN grown by metal organic chemical vapour deposition Electronics Letters. 34: 692. DOI: 10.1049/El:19980453  0.582
1998 Campbell JC. Chapter 7 - Optoelectronics in Silicon Germanium Silicon Semiconductors and Semimetals. 56. DOI: 10.1016/S0080-8784(08)62585-5  0.319
1997 Qi J, Schow CL, Garrett LD, Campbell JC. A silicon NMOS monolithically integrated optical receiver Ieee Photonics Technology Letters. 9: 663-665. DOI: 10.1109/68.588191  0.423
1997 Bean JC, Qi J, Schow CL, Li R, Nie H, Schaub J, Campbell JC. High-speed polysilicon resonant-cavity Photodiode with SiO2-Si Bragg reflectors Ieee Photonics Technology Letters. 9: 806-808. DOI: 10.1109/68.584997  0.708
1997 Hu C, Anselm K, Streetman B, Campbell J. Excess noise in GaAs avalanche photodiodes with thin multiplication regions Ieee Journal of Quantum Electronics. 33: 1089-1093. DOI: 10.1109/3.594870  0.356
1997 Anselm KA, Yuan P, Hu C, Lenox C, Nie H, Kinsey G, Campbell JC, Streetman BG. Characteristics of GaAs and AlGaAs homojunction avalanche photodiodes with thin multiplication regions Applied Physics Letters. 71: 3883-3885. DOI: 10.1063/1.120533  0.672
1997 Carrano JC, Grudowski PA, Eiting CJ, Dupuis RD, Campbell JC. Very low dark current metal–semiconductor–metal ultraviolet photodetectors fabricated on single-crystal GaN epitaxial layers Applied Physics Letters. 70: 1992-1994. DOI: 10.1063/1.118777  0.568
1997 Nie H, Anselm KA, Hu C, Murtaza SS, Streetman BG, Campbell JC. High-speed resonant-cavity separate absorption and multiplication avalanche photodiodes with 130 GHz gain-bandwidth product Applied Physics Letters. 70: 161-163. DOI: 10.1063/1.118341  0.428
1997 Carrano J, Li T, Grudowski P, Eiting C, Dupuis R, Campbell J. High quantum efficiency metal-semiconductor-metal ultraviolet photodetectors fabricated on single-crystal GaN epitaxial layers Electronics Letters. 33: 1980. DOI: 10.1049/El:19971322  0.559
1997 Campbell J, Huffaker D, Deng H, Deppe D. Quantum dot resonant cavity photodiode with operation near 1.3 [micro sign]m wavelength Electronics Letters. 33: 1337. DOI: 10.1049/El:19970906  0.572
1996 Murtaza SS, Nie H, Campbell JC, Bean JC, Peticolas LJ. Short-wavelength, high-speed, Si-based resonant-cavity photodetector Ieee Photonics Technology Letters. 8: 927-929. DOI: 10.1109/68.502273  0.388
1996 Anselm K, Murtaza S, Hu C, Nie H, Streetman B, Campbell J. A resonant-cavity, separate-absorption-and-multiplication, avalanche photodiode with low excess noise factor Ieee Electron Device Letters. 17: 91-93. DOI: 10.1109/55.485177  0.434
1996 Murtaza S, Tan I, Bowers J, Hu E, Anselm K, Islam M, Chelakara R, Dupuis R, Streetman B, Campbell J. High-finesse resonant-cavity photodetectors with an adjustable resonance frequency Journal of Lightwave Technology. 14: 1081-1089. DOI: 10.1109/50.511609  0.586
1996 Garrett L, Qi J, Schow C, Campbell J. A silicon-based integrated NMOS-p-i-n photoreceiver Ieee Transactions On Electron Devices. 43: 411-416. DOI: 10.1109/16.485654  0.474
1996 Murtaza SS, Chelakara RV, Dupuis RD, Campbell JC, Dentai AG. Resonant‐cavity photodiode operating at 1.55 μm with Burstein‐shifted In0.53Ga0.47As/InP reflectors Applied Physics Letters. 69: 2462-2464. DOI: 10.1063/1.117498  0.503
1996 Hu C, Anselm KA, Streetman BG, Campbell JC. Noise characteristics of thin multiplication region GaAs avalanche photodiodes Applied Physics Letters. 69: 3734-3736. DOI: 10.1063/1.117205  0.352
1996 Diaz DC, Schow CL, Qi J, Campbell JC, Bean JC, Peticolas LJ. Si/SiO2 resonant cavity photodetector Applied Physics Letters. 69: 2798-2800. DOI: 10.1063/1.116847  0.375
1996 Sarathy J, Anselm KA, Streetman BG, Campbell JC. Narrow linewidth, tunable distributed feedback photodetector Applied Physics Letters. 69: 3123-3124. DOI: 10.1063/1.116802  0.372
1995 Anselm KA, Murtaza SS, Campbell JC, Streetman BG. Four-wavelength Bragg mirror using GaAs/AlAs. Optics Letters. 20: 178-9. PMID 19859126 DOI: 10.1364/Ol.20.000178  0.326
1995 Murtaza SS, Anselm KA, Nie H, Hu C, Campbell JC, Streetman BG, Bean JC, Peticolas LJ. Resonant-cavity photodetectors for optical communications Proceedings of Spie. 2613: 98-106. DOI: 10.1117/12.228864  0.401
1995 Murtaza S, Anselm K, Hu C, Nie H, Streetman B, Campbell J. Resonant-cavity enhanced (RCE) separate absorption and multiplication (SAM) avalanche photodetector (APD) Ieee Photonics Technology Letters. 7: 1486-1488. DOI: 10.1109/68.477291  0.406
1995 Murtaza SS, Tan I-, Chelakara RV, Islam MR, Srinivasan A, Anselm KA, Bowers JE, Hu EL, Dupuis RD, Streetman BG, Campbell JC. High-efficiency, dual-wavelength, wafer-fused resonant-cavity photodetector operating at long wavelengths Ieee Photonics Technology Letters. 7: 679-681. DOI: 10.1109/68.388763  0.575
1995 Murtaza SS, Anselm KA, Srinivasan A, Streetman BG, Campbell JC, Bean JC, Peticolas L. High-Reflectivity Bragg Mirrors for Optoelectronic Applications Ieee Journal of Quantum Electronics. 31: 1819-1825. DOI: 10.1109/3.466057  0.349
1995 Srinivasan A, Murtaza S, Campbell JC, Streetman BG. High quantum efficiency dual wavelength resonant‐cavity photodetector Applied Physics Letters. 66: 535-537. DOI: 10.1063/1.114004  0.383
1994 Sarathy J, Mayer RA, Jung K, Unnikrishnan S, Kwong DL, Campbell JC. Normal-incidence grating couplers in Ge-Si. Optics Letters. 19: 798-800. PMID 19844449 DOI: 10.1364/Ol.19.000798  0.322
1994 Murtaza S, Mayer R, Rashed M, Kinosky D, Maziar C, Banerjee S, Tasch A, Campbell J, Bean J, Peticolas L. Room temperature electroabsorption in a Ge/sub x/Si/sub 1-x/ PIN photodiode Ieee Transactions On Electron Devices. 41: 2297-2300. DOI: 10.1109/16.337431  0.304
1994 Lai K, Hansing C, Streetman BG, Campbell JC, Leavitt R, Simonis G. GaAs/AlGaAs multiquantum well vertical cavity tunable photodetector Journal of Applied Physics. 76: 8204-8205. DOI: 10.1063/1.357879  0.398
1994 Murtaza SS, Campbell JC, Bean JC, Peticolas LJ. Asymmetric dual GeSi/Si Bragg mirror and photodetector operating at 632 and 780 nm Applied Physics Letters. 65: 795-797. DOI: 10.1063/1.112232  0.412
1994 Li K, Diaz DC, He Y, Campbell JC, Tsai C. Electroluminescence from porous silicon with conducting polymer film contacts Applied Physics Letters. 64: 2394-2396. DOI: 10.1063/1.111625  0.306
1994 Murtaza S, Srinivasan A, Streetman B, Shih Y, Campbell J. Dual mirror and resonant cavity operating at 1.3 and 1.55 µm Electronics Letters. 30: 643-645. DOI: 10.1049/El:19940429  0.35
1994 Murtaza S, Bean J, Campbell J, Peticolas L. High-reflectivity GeSi/Si asymmetric Bragg reflector at 0.8 µm Electronics Letters. 30: 315-316. DOI: 10.1049/El:19940205  0.427
1994 Campbell JC. Chapter 8 - Heterojunction Photodetectors for Optical Communications Vlsi Electronics Microstructure Science. 24: 243-271. DOI: 10.1016/B978-0-12-234124-3.50013-6  0.338
1993 Bean JC, Peticolas LJ, Hull R, Windt DL, Kuchibhotla R, Campbell JC. Design and fabrication of asymmetric strained layer mirrors for optoelectronic applications Applied Physics Letters. 63: 444-446. DOI: 10.1063/1.110018  0.309
1993 Murtaza SS, Qian R, Kinosky D, Mayer R, Tasch AF, Banerjee S, Campbell JC. Room-temperature measurements of strong electroabsorption effect in Ge xSi1-x/Si multiple quantum wells grown by remote plasma-enhanced chemical vapor deposition Applied Physics Letters. 62: 1976-1978. DOI: 10.1063/1.109508  0.362
1993 Kuchibhotla R, Campbell JC, Bean JC, Peticolas L, Hull R. Ge0.2Si0.8/Si Bragg‐reflector mirrors for optoelectronic device applications Applied Physics Letters. 62: 2215-2217. DOI: 10.1063/1.109420  0.377
1993 Tsai C, Li K, Campbell JC, Tasch A. Photodetectors fabricated from rapid‐thermal‐oxidized porous Si Applied Physics Letters. 62: 2818-2820. DOI: 10.1063/1.109220  0.379
1993 Li K, Tsai C, Campbell JC, Hance BK, White JM. Investigation of rapid‐thermal‐oxidized porous silicon Applied Physics Letters. 62: 3501-3503. DOI: 10.1063/1.109008  0.339
1993 Tsai C, Li K, Campbell J. Rapid-thermal-oxidised porous Si photodetectors Electronics Letters. 29: 134-136. DOI: 10.1049/El:19930090  0.383
1992 Mayer RA, Jung KH, Lee WD, Kwong DL, Campbell JC. Thin-film thermo-optic Ge(x)Si(1-x) Mach-Zehnder interferometer. Optics Letters. 17: 1812-4. PMID 19798325 DOI: 10.1364/Ol.17.001812  0.355
1992 Tsai C, Li KH, Kinosky DS, Qian RZ, Hsu TC, Irby JT, Banerjee SK, Tasch AF, Campbell JC, Hance BK, White JM. Correlation between silicon hydride species and the photoluminescence intensity of porous silicon Applied Physics Letters. 60: 1700-1702. DOI: 10.1063/1.107190  0.309
1992 Shih S, Jung KH, Hsieh TY, Sarathy J, Campbell JC, Kwong DL. Photoluminescence and formation mechanism of chemically etched silicon Applied Physics Letters. 60: 1863-1865. DOI: 10.1063/1.107162  0.314
1992 Campbell JC, Tsai C, Li KH, Sarathy J, Sharps PR, Timmons ML, Venkatasubramanian R, Hutchby JA. Photoluminescence of porous silicon buried underneath epitaxial GaP Applied Physics Letters. 60: 889-891. DOI: 10.1063/1.106495  0.358
1992 Tsai C, Li K-, Campbell JC, Hance BK, Arendt MF, White JM, Yau S-, Bard AJ. Effects of illumination during anodization of porous silicon Journal of Electronic Materials. 21: 995-1000. DOI: 10.1007/Bf02684209  0.308
1991 Tsai C, Li K, Sarathy J, Jung K, Shih S, Hance BK, White JM, Kwong D, Sharps PR, Timmons ML, Venkatasubramanian R, Hutchby JA, Campbell JC. The Role of Silicon Monohydride and Dihydride in the Photoluminescence of Porous Silicon and Photoluminescence of Porous Silicon Buried Underneath Epitaxial GaP Mrs Proceedings. 256. DOI: 10.1557/Proc-256-203  0.344
1991 Jung KH, Mayer RA, Hsieh TY, Campbell JC, Kwong DL. GexSi1−x Waveguides Grown by Rapid Thermal Processing Chemical Vator Deposition Mrs Proceedings. 220. DOI: 10.1557/Proc-220-347  0.372
1991 Kuchibhotla R, Srinivasan A, Campbell JC, Lei C, Deppe DG, He YS, Streetman BG. Low-voltage high-gain resonant-cavity avalanche photodiode Ieee Photonics Technology Letters. 3: 354-356. DOI: 10.1109/68.82110  0.586
1991 Huffaker DL, Lee WD, Deppe DG, Lei C, Rogers TJ, Campbell JC, Streetman BG. Optical memory using a vertical-cavity surface emitting laser Ieee Photonics Technology Letters. 3: 1064-1066. DOI: 10.1109/68.118001  0.497
1991 Tsai C, Campbell JC, Dupuis RD. Optically controlled varactor diode Journal of Applied Physics. 70: 3989-3991. DOI: 10.1063/1.349167  0.531
1991 Subramanian G, Dodabalapur A, Campbell JC, Streetman BG. AlxGa1-xAs/GaAs photovoltaic cell with epitaxial isolation layer Applied Physics Letters. 58: 2514-2516. DOI: 10.1063/1.104861  0.35
1991 Mayer RA, Jung KH, Hsieh TY, Kwong D, Campbell JC. GexSi1−xoptical directional coupler Applied Physics Letters. 58: 2744-2745. DOI: 10.1063/1.104773  0.391
1991 Dentai A, Kuchibhotla R, Campbell J, Tsai C, Lei C. High quantum efficiency, long wavelength InP/InGaAs microcavity photodiode Electronics Letters. 27: 2125. DOI: 10.1049/El:19911316  0.409
1990 Johnson BC, Campbell JC, Dentai AG, Joyner CH, Qua GJ. Interaction of hole trapping and transit effects in the temporal response of InP/InGaAs p-type insulator n-type photodiodes Journal of Applied Physics. 68: 5343-5347. DOI: 10.1063/1.347029  0.335
1990 Deppe D, Campbell J, Kuchibhotla R, Rogers T, Streetman B. Optically-coupled mirror-quantum well InGaAs-GaAs light emitting diode Electronics Letters. 26: 1665. DOI: 10.1049/El:19901066  0.543
1989 Campbell J, Chandrasekhar S, Tsang W, Qua G, Johnson B. Multiplication noise of wide-bandwidth InP/InGaAsP/InGaAs avalanche photodiodes Journal of Lightwave Technology. 7: 473-478. DOI: 10.1109/50.16883  0.373
1988 Sugiura O, Dentai AG, Joyner CH, Chandrasekhar S, Campbell JC. High-current-gain InGaAs/InP double-heterojunction bipolar transistors grown by metal organic vapor phase epitaxy Ieee Electron Device Letters. 9: 253-255. DOI: 10.1109/55.707  0.386
1988 Campbell J, Tsang W, Qua G, Johnson B. High-speed InP/InGaAsP/InGaAs avalanche photodiodes grown by chemical beam epitaxy Ieee Journal of Quantum Electronics. 24: 496-500. DOI: 10.1109/3.151  0.414
1988 Chandrasekhar S, Campbell J, Storz F, Dentai A, Joyner C, Qua G. Balanced dual photodiodes integrated with a 3 dB directional coupler for coherent lightwave receivers Electronics Letters. 24: 1457. DOI: 10.1049/El:19880995  0.41
1988 Chandrasekhar S, Campbell J, Dentai A, Joyner C, Qua G, Gnauck A, Feuer M. Integrated InP/GaInAs heterojunction bipolar photoreceiver Electronics Letters. 24: 1443. DOI: 10.1049/El:19880986  0.339
1988 Chandrasekhar S, Campbell J, Storz F, Dentai A, Joyner C, Qua G, Bridges T. Integrated directional couplers with photodetectors by hydride vapour phase epitaxy Electronics Letters. 24: 1145. DOI: 10.1049/El:19880778  0.344
1988 Chandrasekhar S, Campbell J, Dentai A, Joyner C, Qua G, Sugiura O. Heterojunction InP/GaInAs phototransistors/bipolar transistors grown by MOVPE Electronics Letters. 24: 319. DOI: 10.1049/El:19880215  0.399
1988 Johnson BC, Campbell JC, Dupuis RD, Tell B. Two-wavelength disordered quantum-well photodetector Electronics Letters. 24: 181-182. DOI: 10.1049/El:19880120  0.353
1987 Kasper B, Campbell J, Talman J, Gnauck A, Bowers J, Holden W. An APD/FET optical receiver operating at 8 Gbit/s Journal of Lightwave Technology. 5: 344-347. DOI: 10.1109/Jlt.1987.1075511  0.391
1987 Kasper B, Campbell J. Multigigabit-per-second avalanche photodiode lightwave receivers Journal of Lightwave Technology. 5: 1351-1364. DOI: 10.1109/Jlt.1987.1075425  0.334
1987 Chandrasekhar S, Campbell JC, Dentai AG, Joyner CH, Qua GJ, Snell WW. Integrated waveguide p-i-n photodetector by MOVPE regrowth Ieee Electron Device Letters. 8: 512-514. DOI: 10.1109/Edl.1987.26712  0.417
1987 Chandrasekhar S, Campbell J, Dentai A, Qua G. Monolithic integrated waveguide photodetector Electronics Letters. 23: 501-502. DOI: 10.1049/El:19870363  0.406
1987 Dental AG, Campbell JC, Joyner CH, Qua GJ. InGaAs PIN photodiodes grown on GaAs substrates by metal organic vapour phase epitaxy Electronics Letters. 23: 38-39. DOI: 10.1049/El:19870028  0.392
1986 Jhee Y, Campbell J, Ferguson J, Dentai A, Holden W. Avalanche buildup time of InP/InGaAsP/InGaAs avalanche photodiodes with separate absorption, grading, and multiplication regions Ieee Journal of Quantum Electronics. 22: 753-755. DOI: 10.1109/Jqe.1986.1073045  0.363
1986 Dupuis RD, Velebir JR, Campbell JC, Qua GJ. Avalanche photodiodes with separate absorption and multiplication regions grown by metalorganic vapor deposition Ieee Electron Device Letters. 7: 296-298. DOI: 10.1109/Edl.1986.26379  0.354
1986 Dupuis RD, Velebir JR, Campbell JC, Qua GJ. InP/InGaAsP/InGaAs avalanche photodiodes with separate absorption, grading and multiplication regions grown by metalorganic chemical vapour deposition Electronics Letters. 22: 235-236. DOI: 10.1049/El:19860161  0.378
1986 Dupuis R, Campbell J, Velebir J. Planar InGaAs PIN photodetectors grown by metalorganic chemical vapour deposition Electronics Letters. 22: 48-50. DOI: 10.1049/El:19860033  0.385
1986 Dupuis RD, Campbell JC, Velebir JR. InGaAs/InP photodiodes grown by metalorganic chemical vapor deposition Journal of Crystal Growth. 77: 598-605. DOI: 10.1016/0022-0248(86)90357-X  0.39
1985 Holden W, Campbell J, Dentai A. Gain uniformity of InP/InGaAsP/InGaAs avalanche photodiodes with separate absorption, grading, and multiplication regions Ieee Journal of Quantum Electronics. 21: 1310-1313. DOI: 10.1109/Jqe.1985.1072848  0.366
1985 Jhee Y, Campbell J, Holden W, Dentai A, Plourde J. The effect of nonuniform gain on the multiplication noise of InP/InGaAsP/ InGaAs avalanche photodiodes Ieee Journal of Quantum Electronics. 21: 1858-1861. DOI: 10.1109/Jqe.1985.1072608  0.348
1985 Campbell J, Holden W, Qua G, Dentai A. Frequency response of InP/InGaAsP/InGaAs avalanche photodiodes with separate absorption "grading" and multiplication regions Ieee Journal of Quantum Electronics. 21: 1743-1746. DOI: 10.1109/Jqe.1985.1072588  0.34
1985 Levine BF, Bethea CG, Campbell JC. Room‐temperature 1.3‐μm optical time domain reflectometer using a photon counting InGaAs/InP avalanche detector Applied Physics Letters. 46: 333-335. DOI: 10.1063/1.95622  0.331
1985 Kasper BL, Campbell JC, Gnauck AH, Dentai AG, Talman JR. SAGM avalanche photodiode optical receiver for 2 Gbit/s and 4 Gbit/s Electronics Letters. 21: 982-984. DOI: 10.1049/El:19850695  0.344
1985 Holden WS, Campbell JC, Ferguson JF, Dentai AG, Jhee YK. Improved frequency response of InP/InGaAsP/InGaAs avalanche photodiodes with separate absorption, grading and multiplication regions Electronics Letters. 21: 886-887. DOI: 10.1049/El:19850625  0.384
1985 Campbell J, Dentai A, Qua G, Long J, Riggs V. Planar InGaAs PIN photodiode with a semi-insulating InP cap layer Electronics Letters. 21: 447-448. DOI: 10.1049/El:19850318  0.337
1985 Levine B, Bethea C, Campbell J. 1.52 μm room-temperature photon-counting optical time domain reflectometer Electronics Letters. 21: 194. DOI: 10.1049/El:19850137  0.321
1985 Levine BF, Bethea CG, Cohen LG, Campbell JC, Morris GD. Optical time domain reflectometer using a photon-counting InGaAs/InP avalanche photodiode at 1.3 μm Electronics Letters. 21: 83-84. DOI: 10.1049/El:19850057  0.314
1985 Campbell JC. Chapter 5 Phototransistors for Lightwave Communications Semiconductors and Semimetals. 22: 389-447. DOI: 10.1016/S0080-8784(08)62956-7  0.343
1984 Levine BF, Bethea CG, Campbell JC. Near room temperature 1.3 μm single photon counting with a InGaAs avalanche photodiode Electronics Letters. 20: 596-598. DOI: 10.1049/El:19840655  0.361
1984 Kasper BL, Campbell JC, Dentai AG. Measurements of the statistics of excess noise in separate absorption, grading and multiplication (SAGM) avalanche photodiodes Electronics Letters. 20: 796-798. DOI: 10.1049/El:19840542  0.328
1984 Linke R, Kasper B, Campbell J, Dentai A, Kaminow I. 120 km lightwave transmission experiment at 1 Gbit/s using a new long-wavelength avalanche photodetector Electronics Letters. 20: 498. DOI: 10.1049/El:19840346  0.329
1983 Campbell JC, Burrus CA, Copeland JA, Dentai AG. VIA-6 Wavelength Discrimination with a Dual-Wavelength Photodetector Ieee Transactions On Electron Devices. 30: 1610-1611. DOI: 10.1109/T-Ed.1983.21408  0.338
1983 Campbell JC, Qua GJ, Dentai AG. Optical comparator: A new application for avalanche phototransistors Ieee Transactions On Electron Devices. 30: 408-411. DOI: 10.1109/T-Ed.1983.21137  0.337
1983 Campbell J, Dentai A, Qua G, Ferguson J. Avalanche InP/InGaAs heterojunction phototransistor Ieee Journal of Quantum Electronics. 19: 1134-1138. DOI: 10.1109/Jqe.1983.1071966  0.39
1983 Campbell J, Dentai A, Holden W, Kasper B. High-performance avalanche photodiode with separate absorption ‘grading’ and multiplication regions Electronics Letters. 19: 818. DOI: 10.1049/El:19830558  0.397
1983 Campbell JC, Burrus CA, Copeland JA, Dentai AG. Wavelength-discriminating photodetector for lightwave systems Electronics Letters. 19: 672-674. DOI: 10.1049/El:19830458  0.341
1982 Campbell JC, Qua GJ, Copeland JA, Dentai AG. LIGHT-ACTIVATED ELECTROLUMINESCENT SWITCH WITH AN ACTIVE FEEDBACK CIRCUIT. Journal of Applied Physics. 53: 5182-5185. DOI: 10.1063/1.331396  0.326
1982 Campbell JC, Ogawa K. Heterojunction phototransistors for long‐wavelength optical receivers Journal of Applied Physics. 53: 1203-1208. DOI: 10.1063/1.330570  0.364
1981 Campbell J, Dentai A, Burrus C, Ferguson J. InP/InGaAs heterojunction phototransistors Ieee Journal of Quantum Electronics. 17: 264-269. DOI: 10.1109/Jqe.1981.1071072  0.402
1981 Copeland JA, Campbell JC, Dentai AG, Miller SE. Wavelength-multiplexed and gate: A building block for monolithic optically coupled circuits Applied Physics Letters. 39: 197-199. DOI: 10.1063/1.92701  0.357
1981 Campbell JC, Burrus CA, Dentai AG, Ogawa K. Small‐area high‐speed InP/InGaAs phototransistor Applied Physics Letters. 39: 820-821. DOI: 10.1063/1.92570  0.421
1981 Ogawa K, Lee T, Burrus C, Campbell J, Dentai A. Wavelength division multiplexing experiment employing dual-wavelength LEDs and photodetectors Electronics Letters. 17: 857. DOI: 10.1049/El:19810596  0.35
1980 Campbell J, Dentai A, Lee T, Burrus C. Improved two-wavelength demultiplexing InGaAsP photodetector Ieee Journal of Quantum Electronics. 16: 601-603. DOI: 10.1109/Jqe.1980.1070534  0.384
1980 Stone J, Burrus CA, Campbell JC. Laser action in photopumped GaAs ribbon whiskers Journal of Applied Physics. 51: 3038-3041. DOI: 10.1063/1.328090  0.301
1980 Campbell J, Dentai A, Burrus C, Ferguson J. High sensitivity InP/InGaAs heterojunction phototransistor Electronics Letters. 16: 713. DOI: 10.1049/El:19800506  0.426
1979 Lau KY, Campbell JC, Stone J. Magnetooptic bounce-cavity modulator. Applied Optics. 18: 3143-7. PMID 20212819 DOI: 10.1364/Ao.18.003143  0.314
1979 Campbell JC, Lee TP, Dentai AG, Burrus CA. Dual‐wavelength demultiplexing InGaAsP photodiode Applied Physics Letters. 34: 401-402. DOI: 10.1063/1.90812  0.367
1975 Campbell JC, Blum FA, Shaw DW, Lawley KL. GaAs electro‐optic directional‐coupler switch Applied Physics Letters. 27: 202-205. DOI: 10.1063/1.88428  0.352
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